CN105552487A - Dual-layer SIW-based dual-bandpass microwave filter - Google Patents
Dual-layer SIW-based dual-bandpass microwave filter Download PDFInfo
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- CN105552487A CN105552487A CN201510941640.7A CN201510941640A CN105552487A CN 105552487 A CN105552487 A CN 105552487A CN 201510941640 A CN201510941640 A CN 201510941640A CN 105552487 A CN105552487 A CN 105552487A
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- siw
- metal
- coat
- integrated waveguide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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Abstract
The invention relates to a dual-layer SIW-based dual-bandpass microwave filter, which comprises an upper metal coating, an upper dielectric plate layer, a middle metal coating, a lower dielectric plate layer and a lower metal coating, wherein the upper metal coating and the upper dielectric plate layer form an upper substrate integrated waveguide; the lower dielectric plate layer and the lower metal coating form a lower substrate integrated waveguide; the middle metal coating is arranged between the upper dielectric plate layer and the lower dielectric plate layer, so that the upper substrate integrated waveguide and the lower substrate integrated waveguide share the middle metal coating; two-coupled square upper SIW resonant cavities are arranged in the middle of the upper substrate integrated waveguide, and are connected with each other through an inductive coupling window between two cavity bodies; two ends of the upper metal coating are connected with a coplanar waveguide input and output port; two square lower SIW resonant cavities are arranged in the middle of the lower substrate integrated waveguide, and are not coupled to each other; four magnetic coupling windows are formed in the middle metal coating; and the two lower SIW resonant cavities are coupled to the two upper SIW resonant cavities through the four magnetic coupling windows.
Description
Technical field
The present invention relates to a kind of based on double-deck SIW(substrate integration wave-guide) dual-passband microwave filter, belong to field of wireless communications systems, while realizing two passbands, there is the characteristic of little one times of the filter volume of performance more equal in routine, meet small form factor requirements.
Background technology
Microwave dual-passband and comb filter are the parts of particular importance in modern wireless communication systems, along with the growing tension with frequency spectrum resource that develops rapidly of microwave integrated circuit, whole system is towards miniaturized, high-performance future development, and this has higher requirement to the performance of wireless communication system median filter and size.Early stage double-passband filter adopts filter cascade, or filter is in parallel, but this both increases the volume of filter, Chinese scholars expands a series of research to double-passband filter integrated approach for this reason, such as parasitic passband method, transmission zero method, based on extreme points extraction technology and the coupling moment tactical deployment of troops etc.But these methods based on numerical optimization can not be guaranteed because of convergence, therefore the design cycle is long and not easily realize.Utilize frequency translation integrated approach, the topological structure of double-passband filter schematic circuit and the analytical expression of circuit parameter calculation can be derived, thus obtain the attainable circuit form of its microwave.
Current dual-passband microwave filter is in modern microwave satellite communication, and Military Electronics resists, and radar all widely uses.But in order to adapt to the development trend of growing frequency resource microwave integrated circuit, same beam space requires to send the high signal frequency of two interference free performances simultaneously and reaches small form factor requirements, the development of double-deck SIW dual-passband microwave filter support two communication channels well and the height met under spectrum congestion suppress, miniaturized.
Summary of the invention
The object of the invention is to crowded especially for frequency spectrum resource, volume is large, cost is high, and the bank of filters be made up of multichannel one-segment filter, the shortcoming that signal transacting frequency range is single, provide a kind of dual-passband microwave filter based on double-deck SIW, there is the features such as tuned speed is fast, volume is little, cost is low.
For achieving the above object, the present invention adopts following technical proposals:
A kind of dual-passband microwave filter based on double-deck SIW, this filter is made up of two layers of substrate integrated waveguide, comprise five-layer structure: the upper coat of metal, upper medium flaggy, the middle coat of metal, lower medium flaggy and the lower coat of metal, the described upper coat of metal and upper medium flaggy composition upper substrate integrated waveguide, described lower medium flaggy and lower coat of metal composition underlying basal integrated waveguide, the coat of metal in being provided with between upper medium flaggy and lower medium flaggy, the coat of metal during upper and lower two layers of substrate integrated waveguide is shared; The centre of described upper substrate integrated waveguide is provided with the square upper layer SIW resonant cavity of two couplings, and two upper strata SIW resonant cavitys are connected by the inductive coupled window between two cavitys, and described upper coat of metal two ends are connected with the input/output port of co-planar waveguide formula; Be provided with two square lower layer SIW resonant cavitys in the middle of described underlying basal integrated waveguide, be not coupled between Liang Ge lower floor SIW resonant cavity; The described middle coat of metal is provided with four magnetic couplings windows, and described Liang Ge lower floor SIW resonant cavity is coupled with two upper strata SIW resonant cavitys by four magnetic couplings windows.All resonant cavitys serve as body of wall wall by metal throuth hole, meet small form factor requirements.
Described coupling window comprises inductive coupled window and magnetic couplings window, and the size of coupling window determines by the size of the stiffness of coupling between resonant cavity.Inductive coupled window is opened between two resonant cavitys of upper substrate integrated waveguide, and magnetic couplings window is opened on the middle coat of metal, connects upper substrate integrated waveguide and underlying basal integrated waveguide.
Described upper medium flaggy and lower medium flaggy are dielectric constant
dielectric-slab, thickness is h=0.45-0.65mm.
The described coat of metal and input/output port can be the good metal materials of electric conductivity, as gold or silver-colored or copper.
The present invention compared with the prior art, has following apparent outstanding substantive distinguishing features and remarkable advantage:
Filter of the present invention adopts frequency translation integrated approach, the topological structure of double-passband filter schematic circuit and the analytical expression of circuit parameter calculation can be derived, thus obtaining the attainable circuit form of its microwave, available ADS simulates desired result, for last full-scale investigation provides comparing result.Filter of the present invention adopts double-deck SIW structure, is connected by coupling window on the middle coat of metal, can realize volume little, be easy to integrated and characteristic that cost is low.Use 50 Ω microstrip lines as feeder line by introducing input and output, and adopt coplanar waveguide structure, improve the pass-band performance of filter.
Accompanying drawing explanation
Fig. 1 is the structural representation of the dual-passband microwave filter based on double-deck SIW.
Fig. 2 is the structural representation of the coat of metal on the dual-passband microwave filter based on double-deck SIW.
Fig. 3 is the structural representation of the coat of metal under the dual-passband microwave filter based on double-deck SIW.
Fig. 4 is the overall structure schematic diagram of the dual-passband microwave filter that the present invention is based on double-deck SIW.
Fig. 5 is the upper strata SIW structure schematic top plan view of the dual-passband microwave filter based on double-deck SIW.
Fig. 6 is the lower floor SIW structure elevational schematic view of the dual-passband microwave filter based on double-deck SIW.
Fig. 7 is the S parameter schematic diagram of the ideal circuit structure that filter of the present invention emulates in ADS.
Fig. 8 is the S parameter schematic diagram of the physical structure that filter of the present invention emulates in HFSS.
Fig. 9 is the desirable S parameter that filter of the present invention emulates in ADS and the S parameter comparison diagram emulated in HFSS.
Embodiment
Below in conjunction with accompanying drawing, a preferred embodiment of the present invention is elaborated:
As shown in Figure 1 to Figure 3, a kind of dual-passband microwave filter based on double-deck SIW, this filter is made up of two layers of substrate integrated waveguide, comprise five-layer structure: the upper coat of metal 1, upper medium flaggy 2, the middle coat of metal 3, lower medium flaggy 4 and the lower coat of metal 5, the described upper coat of metal 1 and upper medium flaggy 2 form upper substrate integrated waveguide, described lower medium flaggy 4 and the lower coat of metal 5 form underlying basal integrated waveguide, the coat of metal 3 in being provided with between upper medium flaggy 2 and lower medium flaggy 4, the coat of metal 3 during upper and lower two layers of substrate integrated waveguide is shared, the centre of described upper substrate integrated waveguide is provided with the square upper layer SIW resonant cavity 1-1 of two couplings, two upper strata SIW resonant cavity 1-1 are connected by the inductive coupled window 6 between two cavitys, and the described upper coat of metal 1 two ends are connected with the input/output port 1-2 of co-planar waveguide formula, be provided with two square lower layer SIW resonant cavity 3-1 in the middle of described underlying basal integrated waveguide, be not coupled between Liang Ge lower floor SIW resonant cavity 3-1, the described middle coat of metal 3 is provided with four magnetic couplings windows 7, and described Liang Ge lower floor SIW resonant cavity 3-1 is coupled with two upper strata SIW resonant cavity 1-1 by four magnetic couplings windows 7.
Described upper medium flaggy 2 and lower medium flaggy 4 for dielectric constant are
dielectric-slab, thickness is h=0.45-0.65mm.
Fig. 4-6 is structural representations of the present embodiment, through design, emulation and optimization, finally determines that this concrete size based on double-deck SIW dual-passband microwave filter is as follows:
W=24mm，L=56mm，a
1=19.2mm，a
2=20.6mm，W
12=9.19mm，
W
11’=6.2mm，L
sot=8mm，h=0.508mm，w
p=1.56mm
Wherein, W represents the width of filter, and L represents filter length, a
1represent the length of side of single square upper layer SIW resonant cavity 1-1, a
2represent the length of side of single square lower layer SIW resonant cavity 3-1, W
12represent inductive coupled window 6 length between two upper strata SIW resonant cavity 1-1, W
11 'represent the length of the magnetic couplings window 7 between upper strata SIW resonant cavity 1-1 and lower floor SIW resonant cavity 3-1, L
sotrepresent co-planar waveguide trench length, h represents dielectric-slab layer thickness, w
prepresent 50
microstrip line input/output port 1-2 width.
Devise based on said method the dual-passband microwave filter that centre frequency is 5.7GHz/6.3GHz, emulated by electromagnetic simulation software HFSS, debugging.
Fig. 7 and Fig. 8 respectively illustrates ADS and the HFSS simulation result of dual-passband microwave filter.
Fig. 9 shows S11 and the S21 simulation result comparison diagram of ADS and HFSS of dual-passband microwave filter.Simulation comparison result shows: this filter achieves the response characteristic of double frequency-band, and S11 and the S21 simulation result of ADS and HFSS matches substantially, and the validity of this method for designing is described.This filter SIW structure is simple, and size realizes miniaturized, and print simple and easy, spillage of material is relatively little.
Claims (2)
1. the dual-passband microwave filter based on double-deck SIW, it is characterized in that, this filter is made up of two layers of substrate integrated waveguide, comprise five-layer structure: the upper coat of metal (1), upper medium flaggy (2), the middle coat of metal (3), lower medium flaggy (4) and the lower coat of metal (5), the described upper coat of metal (1) and upper medium flaggy (2) composition upper substrate integrated waveguide, described lower medium flaggy (4) and the lower coat of metal (5) composition underlying basal integrated waveguide, the middle coat of metal (3) is provided with between upper medium flaggy (2) and lower medium flaggy (4), the coat of metal (3) during upper and lower two layers of substrate integrated waveguide is shared, the centre of described upper substrate integrated waveguide is provided with the square upper layer SIW resonant cavity (1-1) of two couplings, two upper stratas SIW resonant cavity (1-1) are connected by the inductive coupled window (6) between two cavitys, and the described upper coat of metal (1) two ends are connected with the input/output port (1-2) of co-planar waveguide formula, be provided with two square lower layer SIW resonant cavitys (3-1) in the middle of described underlying basal integrated waveguide, be not coupled between Liang Ge lower floor SIW resonant cavity (3-1), the described middle coat of metal (3) is provided with four magnetic couplings windows (7), and described Liang Ge lower floor SIW resonant cavity (3-1) is coupled with two upper stratas SIW resonant cavity (1-1) by four magnetic couplings windows (7).
2. the dual-passband microwave filter based on double-deck SIW according to claim 1, is characterized in that, described upper medium flaggy (2) and lower medium flaggy (4) for dielectric constant are
dielectric-slab, thickness is h=0.45-0.65mm.
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| CN201510941640.7A CN105552487A (en) | 2015-12-16 | 2015-12-16 | Dual-layer SIW-based dual-bandpass microwave filter |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105846024A (en) * | 2016-05-17 | 2016-08-10 | 电子科技大学 | SIW double-layer cavity filter |
| CN106025464A (en) * | 2016-06-03 | 2016-10-12 | 电子科技大学 | Substrate integrated waveguide-type cavity filter |
| CN107819180A (en) * | 2017-09-27 | 2018-03-20 | 广东曼克维通信科技有限公司 | Substrate integration wave-guide device and substrate integral wave guide filter |
| CN108258404A (en) * | 2018-01-08 | 2018-07-06 | 西安电子工程研究所 | A kind of plane dipole antenna with low rejection characteristic |
| CN108808191A (en) * | 2018-05-07 | 2018-11-13 | 曲阜师范大学 | A kind of double-layer substrate integration waveguide bandpass filter of load square aperture resonant ring |
| CN111162357A (en) * | 2020-01-03 | 2020-05-15 | 南京邮电大学 | Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide |
| CN113328223A (en) * | 2021-06-29 | 2021-08-31 | 展讯通信（上海）有限公司 | Third-order band-pass filter |
| CN114335937A (en) * | 2021-12-20 | 2022-04-12 | 南京邮电大学 | Substrate integrated cavity slow wave hybrid electromagnetic coupling filter |
| CN115411484A (en) * | 2022-09-26 | 2022-11-29 | 上海大学 | Substrate integrated waveguide resonant cavity based on four-corner star-shaped groove-shaped super-structure surface |
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| CN104347917A (en) * | 2014-10-27 | 2015-02-11 | 华南理工大学 | Double-frequency substrate-integrated waveguide band-pass filter with double-layer structure |
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Patent Citations (1)
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| CN104347917A (en) * | 2014-10-27 | 2015-02-11 | 华南理工大学 | Double-frequency substrate-integrated waveguide band-pass filter with double-layer structure |
Non-Patent Citations (2)
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| XIAO-PING CHEN ET AL: "Substrate integrated waveguide cross-coupled filter with negative coupling structure", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》 * |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105846024B (en) * | 2016-05-17 | 2019-07-19 | 电子科技大学 | A kind of SIW double-layer cavity filter |
| CN105846024A (en) * | 2016-05-17 | 2016-08-10 | 电子科技大学 | SIW double-layer cavity filter |
| CN106025464A (en) * | 2016-06-03 | 2016-10-12 | 电子科技大学 | Substrate integrated waveguide-type cavity filter |
| CN106025464B (en) * | 2016-06-03 | 2019-02-15 | 电子科技大学 | A kind of substrate integration wave-guide formula cavity body filter |
| CN107819180A (en) * | 2017-09-27 | 2018-03-20 | 广东曼克维通信科技有限公司 | Substrate integration wave-guide device and substrate integral wave guide filter |
| CN107819180B (en) * | 2017-09-27 | 2021-01-29 | 广东曼克维通信科技有限公司 | Substrate integrated waveguide device and substrate integrated waveguide filter |
| CN108258404A (en) * | 2018-01-08 | 2018-07-06 | 西安电子工程研究所 | A kind of plane dipole antenna with low rejection characteristic |
| CN108808191A (en) * | 2018-05-07 | 2018-11-13 | 曲阜师范大学 | A kind of double-layer substrate integration waveguide bandpass filter of load square aperture resonant ring |
| CN111162357A (en) * | 2020-01-03 | 2020-05-15 | 南京邮电大学 | Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide |
| CN111162357B (en) * | 2020-01-03 | 2021-11-09 | 南京邮电大学 | Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide |
| CN113328223A (en) * | 2021-06-29 | 2021-08-31 | 展讯通信（上海）有限公司 | Third-order band-pass filter |
| CN114335937A (en) * | 2021-12-20 | 2022-04-12 | 南京邮电大学 | Substrate integrated cavity slow wave hybrid electromagnetic coupling filter |
| CN114335937B (en) * | 2021-12-20 | 2023-05-09 | 南京邮电大学 | Substrate integrated cavity slow wave hybrid electromagnetic coupling filter |
| CN115411484A (en) * | 2022-09-26 | 2022-11-29 | 上海大学 | Substrate integrated waveguide resonant cavity based on four-corner star-shaped groove-shaped super-structure surface |
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