CN106711568A - Planar magic T based on substrate integration technology - Google Patents
Planar magic T based on substrate integration technology Download PDFInfo
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- CN106711568A CN106711568A CN201611041595.0A CN201611041595A CN106711568A CN 106711568 A CN106711568 A CN 106711568A CN 201611041595 A CN201611041595 A CN 201611041595A CN 106711568 A CN106711568 A CN 106711568A
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- line
- arm
- power divider
- magic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/19—Conjugate devices, i.e. devices having at least one port decoupled from one other port of the junction type
- H01P5/20—Magic-T junctions
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Abstract
The invention discloses a planar magic T based on a substrate integration technology and belongs to the microwave technology field. In the invention, firstly, based on a quarter square substrate integration resonance cavity, a novel power divider is designed, and then, based on the power divider, a transmission characteristic from a microstrip line to a groove line is used to realize a novel planar magic T. The magic T is characterized in that a quarter square resonance cavity is taken as a basic resonance unit; windowing is adopted among the resonance cavities so as to realize coupling and energy transmission; four ports use a 50 ohm microstrip line structure; and a bottom layer metal layer etches the groove line so as to realize energy transmission from the microstrip line to the resonance cavities. The structure is designed to be simple, a work bandwidth is large, an electrical property is good, and compared to a traditional stereo and multilayer structure magic T, a single layer structure is more suitable for being applied to modern microwave millimeter wave circuit integration.
Description
Technical field
The present invention relates to a kind of Planar Magic-T based on substrate integrated technology, belong to microwave technical field.
Background technology
With developing rapidly for modern technologies, wireless communication technology develops to high speed, multiband, Large Copacity direction.
The magic T of four ports widely should due to being easily achieved the same phase of constant power/anti-phase work(and being allocated as having used in microwave technical field
With.Magic T can be used to constitute Microwave Impedance electric bridge, balanced mixer, power divider, combiner, antenna diplexer, balance phase
Wave detector, frequency discriminator, modulator etc., but traditional waveguide magic T is stereochemical structure, and volume is big, and due to the matching in broadband
Circuit is difficult to realize, so its bandwidth of operation is narrower, these defects significantly limit the scope of its application.
The advantages of traditional slot line structure easily realizes simple Broadband Matching, structure design, easy processing with it, is widely used
Among Planar Magic-T design.Substrate integrated waveguide technology causes that microwave device has broader development.Due to the integrated ripple of substrate
The features such as waveguide technology has small volume, lightweight, high quality factor, low insertion loss, high integration, high power capacity, so
With reference to the SIW Planar Magic-T structures of slot line structure, it is big to overcome conventional waveguide evil spirit T stereochemical structures, the characteristics of narrow bandwidth, in microwave
There is important application value in integrated, miniaturized circuit.
The content of the invention
It is an object of the invention to studying plane individual layer evil spirit T, expand planarization individual layer evil spirit T in modern microwave millimeter wave
Application during circuit is integrated.
The present invention uses following technical scheme to solve above-mentioned technical problem：
The present invention provides a kind of Planar Magic-T based on substrate integrated technology, and the Planar Magic-T includes dielectric substrate and setting
Top layer metallic layer, bottom metal layer in medium substrate upper and lower surface, wherein：
The top layer metallic layer is square, and two rows are provided with the dielectric substrate in criss-cross plated-through hole,
The two rows plated-through hole is respectively perpendicular to a pair of opposite side of top layer metallic layer, and two row's plated-through holes right-angled intersection point
Positioned at the center of top layer metallic layer, the four of top layer metallic layer, dielectric substrate, bottom metal layer and two row's plated-through holes composition
The individual integrated resonator of a quarter square substrates is coupled into power divider；Any three apexes of the top layer metallic layer
A microstrip line is connected respectively, wherein, two microstrip lines of relative two apexes connection wait work(as power divider
Rate output port, another microstrip line as power divider and arm；
The upper surface of the dielectric substrate is additionally provided with difference arm of the microstrip line as power divider, the difference arm with and
Arm it is vertical and not with foregoing three micro-strip linear contact lays；
Slot line structure, the slot line structure and projection of the difference arm on bottom metal layer are etched with the bottom metal layer
Intersect vertically, and with the projection with arm on bottom metal layer point-blank.
Used as further prioritization scheme of the invention, the slot line structure includes the sector short circuit that the line of rabbet joint and its end connect
Line.
Used as further prioritization scheme of the invention, one end of the difference arm also includes a fan-shaped short-circuit line.
Used as further prioritization scheme of the invention, the microstrip line is 50 ohm microstrips.
It is described that a ladder resistance has been also connected with and arm and power divider between as further prioritization scheme of the invention
Resistance parallel operation, for realizing impedance matching.
The present invention uses above technical scheme compared with prior art, with following technique effect：
Design structure of the present invention is simple, and bandwidth of operation is big, and electrical property is good, its single layer structure and conventional stereo, multilayer knot
Structure evil spirit T-phase ratio be more suitably applied to modern microwave millimetre-wave circuit it is integrated in.Meanwhile, using substrate integrated waveguide technology, structure
It is extremely compact, difficulty of processing is reduced, reduce processing cost.
Brief description of the drawings
Fig. 1 is a quarter square resonator schematic diagram.
Fig. 2 is the 3-D view of power divider.
Fig. 3 is the three-dimensional dividing figure of power divider.
Fig. 4 is the simulation result of power divider.
Fig. 5 is the 3-D view of evil spirit T of the invention.
Fig. 6 is the top view of evil spirit T of the invention.
Fig. 7 is the three-dimensional dividing figure of evil spirit T of the invention.
In figure：1 is top layer metallic layer, and 2 is intermediate medium substrate, and 3 is plated-through hole, and 4 is bottom metal layer, and 5 is bottom
Layer slot line structure.
Fig. 8 is bottom slot line structure schematic diagram.
Fig. 9 is the simulation result of evil spirit T of the invention.
Specific embodiment
Technical scheme is described in further detail below in conjunction with the accompanying drawings：
The integrated resonator of square substrates is divided into four resonant elements along the vertical line on its four side respectively, wherein one
Individual resonant element (i.e. the integrated resonator of a quarter square substrates) is as shown in Figure 1.The integrated resonator of square substrates is by upper
(dielectric-slabs of Rogers 5880 are used, dielectric constant is 2.2, and thickness is comprising top layer metallic layer, dielectric substrate successively under
0.508 millimeter) and bottom metal layer, it is uniform-distribution with plated-through hole on its two sides long.
It is a square resonance by four resonant element (size is not identical) cross-couplings as shown in Figure 1
Chamber, the electric wall of adjacent resonant element is coupled by perceptual window, in reality processing for convenience, can equivalent Cheng Rutu
Structure shown in 2.Wherein, three microstrip lines connect square resonator respectively, input and output as the power divider
End, wherein middle microstrip line is input, both sides are output end.Middle input and indirect the one of square resonator
Individual stepped impedance transformer is realizing impedance matching.In this power divider, adjacent resonant element in square resonator
Adjacent magnetic wall reaches magnetic coupling to the full extent at grade, just.Square resonator is on the power distribution
The symmetrical constant power to realize output port of the center longitudinal axis of device is distributed.The impedance of three rule microstrip lines is 50 ohm, and three
Center longitudinal axis of the bar microstrip line on the power divider are symmetrical.The simulation result of the power divider is as shown in Figure 3.
As shown in Fig. 4 to 7, the Planar Magic-T in the present invention includes dielectric substrate and is arranged on medium substrate upper and lower surface
Top layer metallic layer, bottom metal layer, wherein：The top layer metallic layer is square, and two rows are provided with the dielectric substrate
In criss-cross plated-through hole, the two rows plated-through hole is respectively perpendicular to a pair of opposite side of top layer metallic layer, and two rows
The right-angled intersection point of plated-through hole be located at top layer metallic layer center, top layer metallic layer, dielectric substrate, bottom metal layer and
Four integrated resonators of a quarter square substrates that two row's plated-through holes are constituted are coupled into power divider；The top layer
Any three apexes of metal level connect a microstrip line respectively, wherein, two micro-strips that two relative apexes are connected
Line as power divider constant power output port, another microstrip line as power divider and arm.With arm and power
A stepped impedance transformer is also connected between distributor, for realizing impedance matching.Wherein, the middle port 1 of figure six be with arm,
Port 2 and port 3 are that constant power output port, port 4 are difference arm.
Power divider includes four a quarter square resonators in the present invention, and each a quarter square is humorous
The chamber that shakes includes a top-level metallic face, a underlying metal face and four sides, wherein, there are two sides of plated-through hole
Used as electric wall, another two side is a square resonator, adjacent resonant element as magnetic wall, four resonant element cross-couplings
Electric wall be coupled by perceptual window.The adjacent magnetic wall of adjacent resonant element is on the same plane in square resonator
On, and square center longitudinal axis of the resonator on the power divider are symmetrical.
The upper surface of the dielectric substrate is additionally provided with difference arm of the microstrip line as power divider, the difference arm with and
Arm it is vertical and not with foregoing three micro-strip linear contact lays.One end of the difference arm also includes a fan-shaped short-circuit line, and microstrip line is realized
The function of energy transmission, and fan-shaped short-circuit line realizes impedance matching function.
On the basis of above-mentioned power divider, introduce the line of rabbet joint to realize magic T.The line of rabbet joint is etched with the bottom metal layer
Structure, as shown in figure 8, projection of the slot line structure with difference arm on bottom metal layer intersects vertically, and with arm in bottom
Projection on metal level is point-blank.Slot line structure is by the line of rabbet joint with fan-shaped short-circuit line groups into the line of rabbet joint realizes energy transmission
Function, and fan-shaped short-circuit line realizes impedance matching function.
The physical interpretation of magic T of the invention is：When energy is input into from port 1, there is equal energy port 2 and port 3
Spread out of；Due to the line of rabbet joint and the coupled characteristic of microstrip line, the electric field of electromagnetic wave is changed into horizontal polarization from vertical polarization, when electromagnetism wavelength-division
When not reaching the line of rabbet joint from the right and left, electric-field intensity is combined into zero in the horizontal direction, so that energy cannot be transmitted in the line of rabbet joint, it is real
Existing isolation effect；Similarly can proper energy when being input into from 4 ports, port 2 and port 3 are spread out of by equal energy, and port 1 does not have
Energy spreads out of；When energy is input into from port 2 and port 3 simultaneously, when port 1 is met because direction of an electric field is identical, port 1 is defeated
The energy for going out is port 2 and the energy sum of port 3；And energy is when the line of rabbet joint goes out and meets, because their direction of an electric field is conversely, end
The energy of the output of mouth 4 are port 2 and the difference of the energy of port 3.
(a)~(e) is the simulation result of evil spirit T of the invention in Fig. 9, wherein, the abscissa in Fig. 9 in (a) and (b) is frequency
(unit：GHz), ordinate is amplitude (unit：Decibel), S11 represents the return loss of port 1, and S12 represents port 1 to end
The transmission coefficient curve of mouth 2, S13 represents the transmission coefficient curve of port 1 to port 3；In Fig. 9 (a), S12 and S13 bases
This coincidence；S44 represents the return loss of port 4, and S42 represents the transmission coefficient curve of port 4 to port 2, and S43 represents port 4
To the transmission coefficient curve of port 3, in Fig. 9 (b), S42 and S43 are essentially coincided.Abscissa in Fig. 9 in (c) is frequency
Rate (unit：GHz), ordinate is isolation (unit：Decibel), wherein S14 represents the isolation between port 1 and port 4
Degree, S23 represents the isolation between port 2 and port 3.Abscissa in Fig. 9 in (d) and (e) is frequency (unit：Gigahertz (GHZ)
Hereby), ordinate is phase (unit：Degree), wherein, In-phase Difference represent that the same phase phase difference of S12 and S13 is bent
Line, Out-of-Phase Difference represent the inverted phases difference curve of S42 and S43.(a)~(e) in Fig. 9, this
With a width of 8.16GHz~9.11GHz, centre frequency is 8.62GHz to the -10dB of invention evil spirit T, and relative bandwidth is 11%.Energy from
When port 1 is input into, return loss is more than 15dB, and insertion loss is 3.2dB or so；When energy is input into from port 4, return loss is big
In 10dB, insertion loss is 4.1dB or so.Port 2 and the isolation of port 3 are more than 16dB.Port 1 and port 4 are isolated into
More than 50dB, isolation effect is very good.
The above, the only specific embodiment in the present invention, but protection scope of the present invention is not limited thereto, and appoints
What be familiar with the people of the technology disclosed herein technical scope in, it will be appreciated that the conversion or replacement expected, should all cover
It is of the invention include within the scope of, therefore, protection scope of the present invention should be defined by the protection domain of claims.
Claims (5)
1. a kind of Planar Magic-T based on substrate integrated technology, it is characterised in that the Planar Magic-T includes dielectric substrate and setting
Top layer metallic layer, bottom metal layer in medium substrate upper and lower surface, wherein：
The top layer metallic layer is square, and two rows are provided with the dielectric substrate in criss-cross plated-through hole, described
Two row's plated-through holes are respectively perpendicular to a pair of opposite side of top layer metallic layer, and the right-angled intersection point of two row's plated-through holes is located at
The center of top layer metallic layer, four four of top layer metallic layer, dielectric substrate, bottom metal layer and two row's plated-through holes composition
The integrated resonator of/mono- square substrates is coupled into power divider；Any three apexes difference of the top layer metallic layer
One microstrip line of connection, wherein, two microstrip lines of relative two apexes connection are defeated as the constant power of power divider
Exit port, another microstrip line as power divider and arm；
The upper surface of the dielectric substrate is additionally provided with difference arm of the microstrip line as power divider, the difference arm with and arm it is vertical
It is straight and not with foregoing three micro-strip linear contact lays；
Slot line structure is etched with the bottom metal layer, projection of the slot line structure with difference arm on bottom metal layer is vertical
It is intersecting, and with the projection with arm on bottom metal layer point-blank.
2. a kind of Planar Magic-T based on substrate integrated technology according to claim 1, it is characterised in that the line of rabbet joint knot
Structure includes the fan-shaped short-circuit line that the line of rabbet joint and its end connect.
3. a kind of Planar Magic-T based on substrate integrated technology according to claim 1, it is characterised in that the difference arm
One end also includes a fan-shaped short-circuit line.
4. a kind of Planar Magic-T based on substrate integrated technology according to claim 1, it is characterised in that the microstrip line
It is 50 ohm microstrips.
5. a kind of Planar Magic-T based on substrate integrated technology according to claim 1, it is characterised in that described and arm with
A stepped impedance transformer is also connected between power divider, for realizing impedance matching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611041595.0A CN106711568A (en) | 2016-11-24 | 2016-11-24 | Planar magic T based on substrate integration technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611041595.0A CN106711568A (en) | 2016-11-24 | 2016-11-24 | Planar magic T based on substrate integration technology |
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| CN201611041595.0A Pending CN106711568A (en) | 2016-11-24 | 2016-11-24 | Planar magic T based on substrate integration technology |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768788A (en) * | 2017-09-27 | 2018-03-06 | 华南理工大学 | Duplexer based on oval microstrip structure |
| CN107768782A (en) * | 2017-09-27 | 2018-03-06 | 华南理工大学 | Duplexer based on rectangular microstrip structure |
| CN108695582A (en) * | 2018-06-20 | 2018-10-23 | 深圳市深大唯同科技有限公司 | A kind of integrated coaxial line broadband cross device of medium |
| CN111162362A (en) * | 2019-12-27 | 2020-05-15 | 中国电子科技集团公司第十四研究所 | Double-ridge substrate integrated waveguide broadband magic T |
| CN111162357A (en) * | 2020-01-03 | 2020-05-15 | 南京邮电大学 | Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide |
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| CN104134844A (en) * | 2014-08-12 | 2014-11-05 | 南京邮电大学 | Planar magic-T based on substrate integration technology |
| CN104638339A (en) * | 2015-02-27 | 2015-05-20 | 南通大学 | Cavity magic T structure with filtering function |
| CN105024129A (en) * | 2015-07-21 | 2015-11-04 | 南京邮电大学 | Novel planar Magic-T based on folded substrate integrated waveguide |
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| CN104638339A (en) * | 2015-02-27 | 2015-05-20 | 南通大学 | Cavity magic T structure with filtering function |
| CN105024129A (en) * | 2015-07-21 | 2015-11-04 | 南京邮电大学 | Novel planar Magic-T based on folded substrate integrated waveguide |
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| LING YANG ET AL: "A Compact Planar Magic-T Using Quarter-Mode Substrate Integrated Waveguide Resonator and Slotline Coupling Transition", 《2016 IEEE INTERNATIONAL CONFERENCE ON UBIQUITOUS WIRELESS BROADBAND (ICUWB)》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768788A (en) * | 2017-09-27 | 2018-03-06 | 华南理工大学 | Duplexer based on oval microstrip structure |
| CN107768782A (en) * | 2017-09-27 | 2018-03-06 | 华南理工大学 | Duplexer based on rectangular microstrip structure |
| CN107768788B (en) * | 2017-09-27 | 2021-01-19 | 华南理工大学 | Duplexer based on elliptical microstrip structure |
| CN107768782B (en) * | 2017-09-27 | 2021-01-19 | 华南理工大学 | Duplexer based on rectangular microstrip structure |
| CN108695582A (en) * | 2018-06-20 | 2018-10-23 | 深圳市深大唯同科技有限公司 | A kind of integrated coaxial line broadband cross device of medium |
| CN108695582B (en) * | 2018-06-20 | 2024-02-06 | 中天宽带技术有限公司 | Dielectric integrated coaxial line broadband cross device |
| CN111162362A (en) * | 2019-12-27 | 2020-05-15 | 中国电子科技集团公司第十四研究所 | Double-ridge substrate integrated waveguide broadband magic T |
| CN111162357A (en) * | 2020-01-03 | 2020-05-15 | 南京邮电大学 | Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide |
| CN111162357B (en) * | 2020-01-03 | 2021-11-09 | 南京邮电大学 | Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide |
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