CN101515662A - Overlap type chip integrated wave guide power dividing and synthesizing device - Google Patents
Overlap type chip integrated wave guide power dividing and synthesizing device Download PDFInfo
- Publication number
- CN101515662A CN101515662A CNA2009100292653A CN200910029265A CN101515662A CN 101515662 A CN101515662 A CN 101515662A CN A2009100292653 A CNA2009100292653 A CN A2009100292653A CN 200910029265 A CN200910029265 A CN 200910029265A CN 101515662 A CN101515662 A CN 101515662A
- Authority
- CN
- China
- Prior art keywords
- guide
- wave
- substrate integration
- integration wave
- transition structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Microwave Amplifiers (AREA)
Abstract
An overlap type chip integrated wave guide power dividing and synthesizing device can be used for designing a microwave and millimeter wave power synthesizing amplifier circuit and for designing a microwave and millimeter wave integrated circuit. The characteristic that the transmission feature and field distribution of a rectangular metal wave guide and a chip integrated wave guide are similar is utilized to firstly propose to overlap a group of chip integrated wave guides which are of same thickness and contain symmetrical wedge transition structures and insert compactly into the rectangular metal wave guide, thus constructing the design method for the power dividing and synthesizing device with broadband and small insertion loss, and providing a brand-new technical circuit for the microwave and millimeter wave power synthesizing amplifier. The invention realizes an environmental apparatus for a ten-circuit X-wave band overlap chip integrated wave guide power dividing and synthesizing device, wherein the working frequency thereof ranges from 8.2GHz TO 12.4GHz, the back wave loss is below negative 13dB and the transmission loss is below negative 0.8Db.
Description
Technical field
The present invention is a kind of cascade type chip integrated wave guide power branch/synthesizer implementation method that is applied to the microwave and millimeter wave power synthesis amplifier, belongs to microwave and millimeter wave technical field.
Background technology
Microwave and millimeter wave merit branch/synthesizer has obtained using widely in the microwave and millimeter wave power synthesis amplifier.Merit branch/synthesizer is as the passive structures of a key in the combining amplifier, and the quality of its performance has directly determined the performance of whole power amplifier.
Substrate integration wave-guide is a kind of novel guided wave structure formed of rising in recent years, and it is to add the plated-through hole array by the low loss dielectric substrate that applies copper in top and bottom, realizes the function of traditional metal waveguide.Because its propagation characteristic and rectangular metal waveguide (abbreviation waveguide) are similar, so have high Q value, low-loss, high power capacity, advantage such as easy of integration by its microwave and millimeter wave passive device that constitutes, the plated-through hole array that is entirely on the dielectric substrate owing to this structure constitutes simultaneously, therefore available common printed circuit board technology is realized, and can be realized seamless integrated with other planar circuit.This structure Design is simple, processing cost is lower, is convenient to produce in enormous quantities.
Summary of the invention
Technical problem: the objective of the invention is to solve merit branch/synthesizer complex structural designs in the microwave current millimeter wave power combining amplifier, the requirement on machining accuracy height, device is installed and is not easy, production cost costliness, problems such as circuit debugging and test difficulty.A kind of succinct, high performance cascade type chip integrated wave guide power allocation/synthesizer is provided, promotes the development and progress of power synthetic technique, widened the application of substrate integration wave-guide.
Technical scheme: cascade type chip integrated wave guide power allocation/synthesizer of the present invention, it is characterized in that this merit allocation/synthesizer be by with containing of n equal thickness symmetrical wedge transition structure substrate integration wave-guide stacked together, and be inserted into closely respectively along the Narrow Wall of Waveguide wall that input waveguide and output waveguide realize; Utilize substrate integration wave-guide to have transmission characteristic and the field distribution characteristic similar, by containing of input waveguide and n equal thickness of symmetrical wedge transition structure substrate integration wave-guide composition n road power splitter with the rectangular metal waveguide; By containing of n equal thickness of symmetrical wedge transition structure substrate integration wave-guide and output waveguide composition n road synthesizer, the structure of n road power splitter and n road synthesizer is symmetrical.
The symmetrical wedge transition structure substrate integration wave-guide that contains of described equal thickness comprises the symmetrical wedge transition structure of input, metal throuth hole, substrate integration wave-guide, metal applies copper, export symmetrical wedge transition structure, on substrate, be provided with metal and apply copper, the axial monosymmetric metal throuth hole that is provided with of heart line therein along containing of equal thickness of symmetrical wedge transition structure substrate integration wave-guide, between two row's metal throuth holes is substrate integration wave-guide, be provided with the symmetrical wedge transition structure of input at an end of substrate integration wave-guide, be provided with the symmetrical wedge transition structure of output at the other end of substrate integration wave-guide.
Beneficial effect: cascade type chip integrated wave guide power branch/synthesizer design that the present invention proposes has the following advantages:
(1) good broadband characteristic.This is because the similar characteristics of substrate integration wave-guide and waveguide characteristic and field distribution guarantee, in theory, and the operating frequency range basically identical of cascade type chip integrated wave guide power branch/synthesizer and rectangular metal waveguide.
(2) output of every road or the input signal of power splitter or synthesizer has the characteristic of constant amplitude, homophase in this structure.This is owing to substrate integration wave-guide in merit branch/synthesizer is an equal thickness, and guaranteed by insertion waveguide mode shown in Figure 3.If want to design simultaneously the not power splitter or the synthesizer of five equilibrium, only need just can realize easily by the thickness of simple adjustment substrate integration wave-guide.
(3) it doesn't matter for the synthetic way n of the loss of merit branch/synthesizer and power division or power.This characteristic is that the structure that constitutes by merit branch/synthesizer guarantees, its power division or power are synthetic to be finished in input waveguide or output waveguide respectively.
(4) have good performance, be convenient to design, make and be connected with other planar circuit (comprising active device).This is because the high Q value that had of substrate integration wave-guide itself, low-loss, easy of integration and be convenient to characteristic such as processing.
Description of drawings
Fig. 1 is the substrate integration wave-guide schematic diagram that contains symmetrical wedge transition structure of the present invention.
Fig. 2 is a cascade type chip integrated wave guide power allocation/synthesizer schematic diagram of the present invention.
Fig. 3 is a kind of embodiment of invention, X-band ten road cascade type chip integrated wave guide power branch/synthesizer schematic diagrames.
Fig. 4 is a kind of embodiment of the present invention, the test result of X-band ten road cascade type chip integrated wave guide power branch/synthesizers.
Have among the above figure: import symmetrical wedge transition structure 1, metal throuth hole 2, substrate integration wave-guide 3, the deposited copper 4 of metal, the symmetrical wedge transition structure 5 of output, input waveguide 6, the substrate integration wave-guide 7 that contains symmetrical wedge transition structure, output waveguide 8, n road power splitter 9, n road synthesizer 10, X-band input increasing waveguide 11, X-band output increasing waveguide 12, X-band ten road power splitters 13, X-band No. ten synthesizers 14.
Embodiment
The invention provides a kind of implementation method of cascade type chip integrated wave guide power branch/synthesizer, it is characterized in that this merit branch/synthesizer be by with containing of n equal thickness symmetrical wedge transition structure substrate integration wave-guide stacked together, and closely be inserted in input waveguide and the output waveguide respectively along the Narrow Wall of Waveguide wall and finish.Utilize substrate integration wave-guide to have transmission characteristic and the field distribution characteristic similar with the rectangular metal waveguide, by containing of input waveguide and n equal thickness symmetrical wedge transition structure substrate integration wave-guide can form n road power splitter, by containing of n equal thickness symmetrical wedge transition structure substrate integration wave-guide and output waveguide can form n road synthesizer.Fig. 1 provided the single substrate integration wave-guide schematic diagram that contains symmetrical wedge transition structure, and Fig. 2 has provided substrate integration wave-guide that n equal thickness contain the wedge transition and inserted the schematic diagram of forming n road merit branch/synthesizer after the input and output waveguide.At n road power splitter end, signal enters input waveguide, apply copper by n equal thickness printed board top and bottom and be divided into the n five equilibrium, and be incorporated in n the substrate integration wave-guide by symmetrical wedge transition structure, thereby the constant power of having realized n road signal easily distributes.At n road synthesizer end, be input to output waveguide from the signal of n substrate integration wave-guide respectively via symmetrical wedge transition structure separately, in output waveguide, finish the synthetic and output of power of signal, thereby the constant power of realizing n road signal easily distributes.The structure of n road power splitter and n road synthesizer is symmetrical.
Implement device is one ten road X-band merit branch/synthesizer.This device comprises: substrate integration wave-guide 7, X-band output the increasing waveguide 12 that waveguide 11, ten equal thickness contain symmetrical wedge transition structure increased in X-band input.At ten road power splitters, 13 ends, signal enters X-band input increasing waveguide 11, be incorporated in ten substrate integration wave-guides 3 by the symmetrical wedge transition structure 1 of the input of ten equal thickness, thereby the constant power of having realized ten road signals easily distributes.At No. ten synthesizers 14 ends, signal from ten substrate integration wave-guides 3 is input to X-band output increasing waveguide 12 through the symmetrical wedge transition structure 5 of output separately, increase the synthetic and output of the power of finishing signal in the waveguide 12 in X-band output, thereby the constant power of realizing ten road signals easily is synthetic.
The present invention has realized the experimental provision of ten road cascade type chip integrated wave guide power allocation/synthesizers on 8.2GHz～12.4GHz frequency range, Fig. 3 has provided this structural representation, and Fig. 4 is a test result.This merit branch/synthesizer comprises substrate integration wave-guide 7 and X-band input an increasing waveguide 11 and 1 X-band output increasing waveguide 12 that ten equal thickness contain symmetrical wedge transition structure.Form X-band ten road power splitters 13 by the left-half that X-band input waveguide 11 and ten equal thickness contain the substrate integration wave-guide 7 of symmetrical wedge transition structure, form X-band No. ten synthesizers 14 by the right half part that X-band output waveguide 12 and ten equal thickness contain the substrate integration wave-guide 7 of symmetrical wedge transition structure.
X-band of the present invention increases the waveguiding structure parameter: an end that increases waveguide is the cross section of X-band standard waveguide HD-QB/100, cross sectional dimensions is 22.86mm * 10.16mm, the other end cross sectional dimensions that increases waveguide is 22.86mm * 10.2mm, increasing waveguide length is 85mm, and increasing the waveguide transition segment length is 22mm.
The concrete parameter of substrate integration wave-guide that contains symmetrical wedge transition structure of the present invention is: substrate thickness is 1mm, and the thickness that metal applies copper is 0.018mm, and substrate DIELECTRIC CONSTANT r is 2.2.All the other parameters as shown in Figure 1, wherein, L_trans=63mm, L_dove=54mm, L_cop=4.5mm, W_siw0=26mm, W_siw1=16mm, R_via=0.5mm, L_sp=0.8mm.
Test result as shown in Figure 5.All include the loss of waveguide-SMA transducer and 2.4mm-3.5mm adapter in all test datas.In X-band, return loss is lower than-13dB, and loss is better than-0.8dB.
Claims (2)
1, a kind of cascade type chip integrated wave guide power allocation/synthesizer, it is characterized in that this merit allocation/synthesizer is by containing of n equal thickness of symmetrical wedge transition structure substrate integration wave-guide (7) is stacked together, and be inserted into closely respectively along the Narrow Wall of Waveguide wall that input waveguide (6) and output waveguide (8) realize; Utilize substrate integration wave-guide to have transmission characteristic and the field distribution characteristic similar, form n road power splitter (9) by the input waveguide (6) and the symmetrical wedge transition structure substrate integration wave-guide (7) that contains of n equal thickness with the rectangular metal waveguide; Form n road synthesizer (10) by containing of n equal thickness of symmetrical wedge transition structure substrate integration wave-guide (7) and output waveguide (8), the structure of n road power splitter (9) and n road synthesizer (10) is symmetrical.
2, cascade type chip integrated wave guide power allocation/synthesizer as claimed in claim 1, it is characterized in that containing of described equal thickness of symmetrical wedge transition structure substrate integration wave-guide (7) comprises input symmetrical wedge transition structure (1), metal throuth hole (2), substrate integration wave-guide (3), metal applies copper (4), export symmetrical wedge transition structure (5), on substrate, be provided with metal and apply copper (4), the axial monosymmetric metal throuth hole (2) that is provided with of heart line therein along containing of equal thickness of symmetrical wedge transition structure substrate integration wave-guide (7), between two row's metal throuth holes (2) is substrate integration wave-guide (3), be provided with input symmetrical wedge transition structure (1) at an end of substrate integration wave-guide (3), be provided with output symmetrical wedge transition structure (5) at the other end of substrate integration wave-guide (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100292653A CN101515662A (en) | 2009-04-03 | 2009-04-03 | Overlap type chip integrated wave guide power dividing and synthesizing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100292653A CN101515662A (en) | 2009-04-03 | 2009-04-03 | Overlap type chip integrated wave guide power dividing and synthesizing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101515662A true CN101515662A (en) | 2009-08-26 |
Family
ID=41040012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100292653A Pending CN101515662A (en) | 2009-04-03 | 2009-04-03 | Overlap type chip integrated wave guide power dividing and synthesizing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101515662A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733817A (en) * | 2015-04-13 | 2015-06-24 | 南京邮电大学 | Stacked cascaded two cavity substrate integrated waveguide dual mode bandpass filter |
| CN111162357A (en) * | 2020-01-03 | 2020-05-15 | 南京邮电大学 | Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide |
-
2009
- 2009-04-03 CN CNA2009100292653A patent/CN101515662A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733817A (en) * | 2015-04-13 | 2015-06-24 | 南京邮电大学 | Stacked cascaded two cavity substrate integrated waveguide dual mode bandpass filter |
| CN111162357A (en) * | 2020-01-03 | 2020-05-15 | 南京邮电大学 | Multi-layer dual-passband miniature filter based on double-layer substrate integrated waveguide |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1925211B (en) | Half-modular substrate integral wave guide filter | |
| CN103904391B (en) | Multilayer hybrid guided mode hexagon substrate integral wave guide filter | |
| CN103326093A (en) | Novel cross coupling substrate integrated waveguide band-pass filter | |
| CN104092028A (en) | Balance feed differential slot antenna for restraining common-mode noise | |
| CN202633488U (en) | Resonance type substrate integrated waveguide power synthesizer | |
| CN109326863B (en) | Dual-frequency filtering power divider based on dielectric substrate integrated waveguide | |
| CN103094646B (en) | Substrate integration waveguide load dielectric resonator filter | |
| CN203085713U (en) | Substrate integrated waveguide dual-mode wave filter | |
| CN109687085B (en) | Radial line waveguide high-power microwave power synthesizer | |
| CN107256998B (en) | Based on half module substrate integrated wave guide Meta Materials line filter | |
| CN111613858A (en) | Dielectric waveguide filter | |
| CN102122747A (en) | Microwave power distributor | |
| CN103956552A (en) | Microwave power divider | |
| CN101515662A (en) | Overlap type chip integrated wave guide power dividing and synthesizing device | |
| CN1700512A (en) | Chip integrated waveguide multiplexer | |
| CN201378619Y (en) | High-Q-value and low-loss substrate integrated waveguide power splitter/synthesizer | |
| CN103647123A (en) | Half mode substrate integration waveguide horizontal symmetrical filter | |
| CN100412584C (en) | Substrate integrated waveguide quasi-sensitive window filter | |
| CN112864565A (en) | Wilkinson power divider with high isolation of broadband | |
| CN101499552B (en) | Wideband substrate integrated ridge waveguide and analyzing method thereof | |
| CN201174412Y (en) | A dual-mode circular high order cavity filter of substrate integration waveguide | |
| CN115473025B (en) | Waveguide difference port magic T based on microstrip-waveguide hybrid integration | |
| CN106374179A (en) | Via-hole-loaded half-mode substrate integrated waveguide power divider | |
| CN100444461C (en) | Base-plate integrative waveguide pseudo inductive through-hole filter | |
| CN101242018A (en) | Generator of circularly polarized wave |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20090826 |