CN111033193B - 检测光电传感器中的高强度光 - Google Patents
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Abstract
两种单独的方案用于检测在弱光条件和强光条件下的光强度。在强光条件下,设置两个阈值电压,并测量传感器电压在两个阈值电压的相交处之间的时间以确定在强光条件下的光强度。在弱光条件下,比较器用于比较传感器电压相对于随时间增加的参考电压的电压电平。检测当参考电压达到传感器电压电平时的时间以确定在弱光条件下的光强度。
Description
背景
本公开总体上涉及光传感器,并且更具体地涉及堆叠式组件中的背面照明光传感器。
光传感器是将光转换成电信号的电子探测器。在摄影术中,快门是允许光在一段所确定的时间期间通过的设备,将光传感器暴露于光,以便捕获场景的图像。滚动快门(rolling shutter)是图像捕获的方法,其中通过在水平或垂直方向上快速扫描整个场景来捕获静止图片或视频的每一帧。也就是说,每个像素不是同时被捕获;来自不同行的像素在不同时间被捕获。滚动快门主要用在手机传感器中。相反,机器视觉使用全局快门(global shutter),其中每个像素同时被捕获。
大多数光传感器使用背面照明。背照式传感器是一种类型的数字光传感器,其使用成像元件的特定布置来增加所捕获的光量,改善了弱光性能。传统的前照式数字照相机与人眼类似地被构造,镜头在前面以及光电探测器在背面。传感器的该定向将数字照相机传感器的有源矩阵(单独图片元素的矩阵)置于它的前表面上并简化制造。然而,矩阵及其布线反射一些光,减少了可用来被捕获的信号。背照式传感器包含相同的元件,但通过在制造期间翻转硅晶片且然后使它的反面变薄来将布线布置在光电阴极层后面,使得光可以射到光电阴极层而不穿过布线层,从而提高输入光子被捕获的机会。
然而,传统的背照式传感器在暴露于光时往往有较高的泄漏。此外,光电二极管填充因子(fill factor)或像素的光敏面积与总像素面积之比相对较低。较大的填充因子是有益的,因为更多的像素区域用于光收集,这同时提高了信噪比(SNR)和动态范围。图像传感器的动态范围可度量传感器可以准确捕获的照明范围有多宽。图像传感器的动态范围越宽,在弱光条件下可以显示的细节就越多,且因此成像***就变得越通用。图像传感器的SNR度量信号与它的相关噪声之间的比。具有低SNR的图像传感器将具有在所捕获的图像中出现的大量噪声。具有高SNR的图像传感器可以在弱光条件下被使用。
概述
实施例涉及在光电传感器(photo sensor)中的像素,其包括光电二极管、浮置扩散点(floating diffusion point)以及在光电二极管和浮置扩散点之间的晶体管。晶体管的栅极被施加有在晶体管的关断电压和晶体管的导通电压之间的中间电压,以响应于在曝光阶段期间入射在光电二极管上的光的强度超过阈值强度而将电荷从光电二极管转移到浮置扩散点。晶体管的栅极在曝光阶段之后的感测阶段被施加有导通电压,以将电荷从光电二极管转移到浮置扩散点。
在涉及光电传感器中的像素、方法、存储介质、***和计算机程序产品的所附权利要求中具体公开了根据本发明的实施例,其中在一个权利要求类别(例如光电传感器中的像素)中提到的任何特征也可以在另一个权利要求类别(例如方法)中被要求保护。在所附权利要求中的从属性或往回引用仅为了形式原因而被选择。然而,也可以要求保护由对任何前面的权利要求的有意往回引用(特别是多项引用)而产生的任何主题,使得权利要求及其特征的任何组合被公开并可被要求保护,而不考虑在所附权利要求中选择的从属性。可以被要求保护的主题不仅包括如在所附权利要求中阐述的特征的组合,而且还包括在权利要求中的特征的任何其他组合,其中,在权利要求中提到的每个特征可以与在权利要求中的任何其他特征或其他特征的组合相结合。此外,本文描述或描绘的实施例和特征中的任一个可以在单独的权利要求中和/或以与本文描述或描绘的任何实施例或特征的任何组合或以与所附权利要求的任何特征的任何组合被要求保护。
在根据本发明的实施例中,在光电传感器中的像素包括:
光电二极管、浮置扩散点以及在光电二极管和浮置扩散点之间的晶体管,晶体管的栅极被施加有在晶体管的关断电压和晶体管的导通电压之间的中间电压,以响应于在曝光阶段期间入射在光电二极管上的光的强度超过阈值强度而将电荷从光电二极管转移到浮置扩散点,晶体管的栅极在曝光阶段之后的感测阶段被施加有导通电压,以将电荷从光电二极管转移到浮置扩散点。
光电二极管、浮置扩散点和晶体管可以被包括在第一衬底的一部分中。
该像素还可以包括:第二衬底的一部分,其包括耦合到导线的电路,该电路被配置为:检测在当信号电压达到第一阈值时的第一时间和当信号电压达到不同于第一阈值的第二阈值时的第二时间之间的时间差,该信号电压表示在浮置扩散点处的电压的放大版本,以及在感测阶段期间检测随时间增加的参考电压达到信号电压时的时间;以及在浮置扩散点和导线之间传输信号电压的像素级互连部(pixel level interconnect)。
第一衬底还可以包括:第一复位晶体管,其被配置为响应于在曝光阶段之后导通第一复位晶体管来使浮置扩散点处的电压复位;以及放大器,其具有连接到浮置扩散点的输入端和连接到像素级互连部的输出端。
放大器可以是源极跟随器晶体管。
第二衬底还可以包括:具有连接到像素级连接部的输入端的模数转换器(ADC);以及耦合到像素级互连部的电流源。
该ADC可以包括:比较器,其被配置为在信号电压对应于第一参考电压时的第一时间生成第一输出,并且在信号电压对应于低于第一参考电压的第二参考电压时的第二时间生成第二输出;以及计数器,其耦合到比较器以接收第一输出和第二输出,该计数器被配置为对在第一时间和第二时间之间的时钟脉冲的数量进行计数。
电流源可以包括另一晶体管,其具有在感测阶段的一部分期间被施加有偏置电压的栅极。
浮置扩散点可以被配置成在感测阶段之后复位到复位电压。
在根据本发明的另一实施例中,用于操作像素的方法包括:在曝光阶段将中间电压施加到第一晶体管的栅极,该中间电压在第一晶体管的关断电压和晶体管的导通电压之间;在曝光阶段之后的感测阶段,将导通电压施加到第一晶体管的栅极;以及响应于在曝光阶段期间入射在光电二极管上的光的强度超过阈值强度而将电荷从光电二极管转移到第一衬底中的浮置扩散点。
该方法还可以包括:通过像素级互连部将信号电压从第一衬底传输到第二衬底,该信号电压表示在浮置扩散点处的电压的放大版本。
该方法还可以包括在曝光阶段期间通过在第二衬底中的电路检测信号电压的增加或减少的速率。
该电路可以包括模数转换器(ADC)。
可以通过确定在当信号电压达到第一阈值时的第一时间和当信号电压达到不同于第一阈值的第二阈值时的第二时间之间的时间差来检测信号电压的增加或减少的速率。
可以通过下列操作来确定时间差:由在第二衬底中的比较器在信号电压对应于第一参考电压时的第一时间生成第一输出;在第一时间将来自比较器的第一输出传输到计数器;由比较器在信号电压对应于高于第一参考电压的第二参考电压时的第二时间生成第二输出;
在第二时间将来自比较器的第二输出传输到计数器;以及
由计数器对在第一时间和第二时间之间的时钟脉冲的数量进行计数。
该方法还可以包括:响应于在曝光阶段之后导通第一复位晶体管来使浮置扩散点处的电压复位。
该方法还可以包括:在感测阶段的一部分期间将偏置电压施加到电流源的栅极。
该方法还可以包括:在感测阶段之后使浮置扩散点复位。
该方法还可以包括:在感测阶段期间检测变化的参考电压的电压电平与信号电压的电压电平一致时的时间。
在本发明的另一实施例中,一个或更多个计算机可读非暂时性存储介质体现软件,该软件在被执行时可操作来在根据本发明或任何上面提到的实施例的***中执行。
在本发明的另一实施例中,计算机实现的方法使用根据本发明或任何上面提到的实施例的***。
在本发明的另一实施例中,优选地包括计算机可读非暂时性存储介质的计算机程序产品在根据本发明或任何上面提到的实施例的***中被使用。
一个或更多个计算机可读非暂时性存储介质体现软件,该软件在被执行时可操作来在根据本发明的***中执行。
一种计算机实现的方法,其中根据上述发明的***被使用。
一种计算机实现的方法,其中根据上述发明的存储介质被使用。
附图简述
图1是示出根据一个实施例的包括光电传感器的电子设备的高级框图。
图2是示出根据一个实施例的图1的光电传感器的示意图。
图3是根据一个实施例的在堆叠式结构中的光电传感器的横截面视图。
图4是示出根据一个实施例的光电传感器的像素的电路图。
图5和图6是示出根据一个实施例,当像素暴露于高强度光时在曝光阶段期间的电压信号的变化的曲线图。
图7是示出根据一个实施例的在感测阶段电压信号的变化的曲线图。
图8是示出根据一个实施例的在弱光条件和强光条件下检测光强度的方法的流程图。
优选实施例的详细描述
现在将详细参考优选实施例,其示例在附图中被示出。只要有可能,相同的参考数字将用于在全部附图中指相同或相似的部件。
实施例涉及堆叠式光电传感器组件,其中两个衬底垂直地堆叠。这两个衬底由像素级处的互连部连接以将信号从在第一衬底处的光电二极管提供到在第二衬底上的电路。在第二衬底中生成并处理对应于在第一衬底中的电荷的数量的电压信号。两种单独的方案用于检测在弱光条件和强光条件下的光强度。在强光条件下,设置两个阈值电压,并测量传感器电压在两个阈值电压的相交(crossing)处之间的时间以确定在强光条件下的光强度。在弱光条件下,比较器用于相对于随着时间的过去而增加的参考电压来比较传感器电压的电压电平。检测当参考电压达到传感器电压电平时的时间以确定在弱光条件下的光强度。
示例***架构
图1是示出根据一个实施例的电子设备100的高级框图。在一个实施例中,电子设备100除了其他部件以外还包括通信地耦合的处理器102和光电传感器104。电子设备100可以包括在图1中未示出的其他部件,例如存储器和各种其他传感器。
处理器102是除了别的以外还对数据源执行操作以用于提供图像的电子电路。数据源可以包括提供传感器数据108的光电传感器104。处理器102还生成被发送到光电传感器104以使光电传感器104执行某些操作的操作指令106。由处理器102执行的处理可以包括各种数字信号处理以提高图像质量或编辑图像。
光电传感器104是使用光电转换在逐像素基础上测量射在光电传感器104上的光的强度的电路。测量光强度可以涉及由像素中的光电二极管检测光。作为响应,像素对检测到的光执行光电转换以成为电压或电流信号。代表在每个像素处检测到的光强度的电压信号或电流信号可以被数字化成传感器数据108,并发送到处理器102。
尽管在图1中未示出,但电子设备100可以包括传感器数据108被存储其中的存储器。电子设备100还可以包括用于发送传感器数据108用于在显示设备(例如,液晶显示器(LCD)或有机发光二极管(OLED)显示器)上进行显示的显示接口。
图2是示出根据一个实施例的光电传感器104的示意图。光电传感器104除了其他部件以外还包括数字块202、全局计数器203、行驱动器和全局信号驱动器模块204、移动产业处理器接口(MIPI)205、计数器缓冲器206、数字像素阵列207、读出放大器208、线路存储器(line memory)209、功率调节器210、斜波发生和缓冲器模块211以及读出放大偏置模块212。
数字块202是处理与光电传感器104的操作相关联的数字信号的电路。在一个或更多个实施例中,数字块202的至少一部分可以作为数字像素阵列207的一部分而不是与数字像素阵列207分离的电路来被提供。
全局计数器203是由级联触发器构成的数字时序逻辑电路,并且向光电传感器104的各种部件提供计数器信号。
行驱动器和全局信号驱动器模块204是经由扫描线(未示出)向像素行提供信号的电路。提供给每行像素的信号指示图像信号的感测和/或在每行像素处的复位操作。
MIPI 205是用于将传感器数据108从光电传感器104传输到处理器102的串行接口。MIPI接口通常具有单个时钟通道和传送串行数据的两个数据通道(未示出)。这三条通道在成对的导线上传送信号,其中信号常常是差分信号。
计数器缓冲器206是从全局计数器203接收计数器信号并且向在数字像素阵列207中的像素列发送信号以协调感测和复位操作的电路。
数字像素阵列207包括多个像素。在一个实施例中,数字像素阵列以二维方式布置,可通过行和列来寻址。每个像素被配置为对光进行感测并输出对应于输入光的强度的信号。每个像素可以包括如下面参考图3所述的部件。
读出放大器208是读取电路中的元件,其用于从数字像素阵列207读出数字信号。读出放大器208感测来自位线的低功率信号,该低功率信号表示由数字像素阵列207中的像素捕获的光的强度。读出放大器208可以通过利用模数转换器(ADC)来生成数字输出信号。在一个或更多个实施例中,读出放大器208的至少一部分可以被包括在数字像素阵列207中。
在经由MIPI 205将数字值作为传感器数据108发送到处理器102之前,线路存储器209暂时存储如由读出放大器208读出并由数字块202处理的、在数字像素阵列207处检测到的光强度的所感测的数字值。
功率调节器210是提高传送到光电传感器104的部件的功率质量的电路。功率调节器210可以保持并传送允许光电传感器104的部件正确地运行的恒定电压。在一个实施例中,功率调节器210是使正弦AC波形平滑的AC功率调节器。在替代实施例中,功率调节器210是电力线调节器,其接受功率并基于连接到电力线调节器的部件的要求来对它进行修改。
斜波发生器和缓冲器模块211包括斜波发生器和缓冲器。斜波发生器是函数发生器,其将它的电压增加到特定值。斜波发生器可以用于在改变负载时避免颠簸(jolt)。缓冲器提供从一个电路到另一个电路的电阻抗变换以防止斜波发生器被负载影响。
读出放大偏置模块212向读出放大器208提供偏置电压信号。偏置电压信号是为了建立读出放大器208的适当操作条件的目的的预定电压,例如稳定的DC电压。
示例堆叠式光电传感器组件
图3是示出根据一个实施例的堆叠式光电传感器组件300的横截面视图。在一个实施例中,堆叠式光电组件包括耦合到第二衬底340的第一衬底310。第一衬底310可以是背面照明302的传感器,其被翻转并且除了其他部件以外还包括第一n+扩散阱312、光电二极管314、晶体管AB 313、晶体管TX 316和第二n+扩散阱320。
晶体管AB 313和晶体管TX 316中的每一个包括有源层、耦合到有源层的漏电极、用作晶体管AB和晶体管TX的源极的光电二极管314、在有源层上的绝缘层以及栅电极(未示出)。通过控制在晶体管AB 313和晶体管TX 316的栅极处的电压电平,晶体管AB 313和晶体管TX 316可以被导通或关断。这些晶体管的栅极从在数字像素阵列207外部的电路接收信号。
第一n+扩散阱312是在第一衬底310中形成的N掺杂注入区。当晶体管AB 313在非曝光时间期间导通时,第一n+扩散阱312接收从光电二极管314转移的光电子。这相当于在传统胶片照相机中的关闭快门模式。光电子从光电二极管314到第一n+扩散阱312的转移确保没有光电子累积在光电二极管314上,因为非曝光时间是当没有信号被生成的时段。第一n+扩散阱312通常连接到正电压源(例如VDD),因此光电子被排出。在相当于胶片照相机中的快门打开模式的曝光时间期间,晶体管AB 313和晶体管TX 316都被关断,且光电子最初存储在光电二极管314内部。在曝光结束时,晶体管TX 316被导通。作为结果,存储在光电二极管314中的电荷被转移到第二n+扩散阱320。
光电二极管314是将光转换成电流的半导体器件。当光子在光电二极管314中被吸收时,生成电流。光电二极管314可以是p-n结或PIN结构。当通过背面照明302的光的强度较高时,累积在光电二极管314上的电荷的数量比较高。类似地,当通过背面照明302的光的强度较低时,累积在光电二极管314上的电荷的数量比较低。
互连部350可以是从第二n+扩散阱320到第二衬底340中的电路342的像素级直接互连部。在一些实施例中,互连部350可以是从第一衬底310中的放大器(未示出)的输出端到第二衬底340中的电路342的像素级直接互连部。放大器充当缓冲器并使浮置扩散点与互连部350隔离,因为存在与互连部350相关的高泄漏电流和寄生电容。下面参考图4描述放大器和浮置扩散点。在一个实施例中,互连部350传输反映从光电二极管314转移到第二n+扩散阱320的电荷的数量的电压信号。在替代实施例中,互连部350传输反映从光电二极管314转移到第二n+扩散阱320的电荷的数量的电流信号。互连部350将电压信号传送到电路342,用于进一步处理(例如采样和模数转换)。在还有其他实施例中,堆叠式光电传感器组件300可以包括也将信号从第二衬底340的电路342传输到第一衬底310的附加互连部。例如,可以经由这些附加互连部从电路342传输用于控制晶体管AB 313和晶体管TX 316的信号。
实施例将在传统光电传感器中设置在第一衬底310上的各种电路部件移动到第二衬底340,并且经由像素级互连部350将第二衬底340的电路连接到第一衬底310中的部件。移动到第二衬底340的各种电路部件除了别的以外还可以包括开关、放大器和电流源。以这种方式,可以有益地减小由第一衬底310中的部件占据的面积,并且可以增加填充因子。
光电传感器的像素的示例电路
图4是示出根据一个实施例的光电传感器104的像素400的电路图。在图4的实施例中,第一衬底310除了其他部件以外还包括光电二极管314、晶体管TX、第一复位晶体管TRST1和放大器TS。寄生电容存在于第一衬底310中在晶体管TX和第一复位晶体管TRST1之间的第一电容器Cs1中。上面参考图3描述了光电二极管314和晶体管TX的操作。
在操作的曝光阶段期间,晶体管TX的栅极电压被保持在既不导通也不关断晶体管TX的中间电压处。特别地,本文的中间电压指0.3V至0.7V。在这个范围内,光电二极管314中累积的电荷可以移动到浮置扩散点FD。中间电压指在晶体管TX的有功电压(activevoltage)和无功电压(inactive voltage)之间的电压。在晶体管TX栅极下方的电势用作在光电二极管314和浮置扩散点FD之间的势垒(barrier)。如果晶体管TX栅极连接到零电压或负电压,则势垒是高的,并且更多的电荷在光电二极管314内部累积。如果晶体管TX栅极连接到很正的电压(例如,2.5V至3.3V),则晶体管TX栅极完全被导通,并且没有势垒。中间电压导致中间势垒,其中由低水平光生成的所有电荷在光电二极管314内部累积,而对于明亮的光,一旦光电二极管314被填满,电荷就流过势垒以在浮置扩散点FD上累积。
通过将栅极电压置于中间电压处,当背面照明302的光强度超过某个阈值时,电荷从光电二极管314移动到第二n+扩散阱320。如果背面照明302的光强度不超过阈值,则电荷在光电二极管314内累积而不转移到第二n+扩散阱320。相反,在曝光阶段之后的感测阶段,晶体管TX完全被导通以将在光电二极管314中累积的电荷转移到第二n+扩散阱320。
在浮置扩散点FD处的电压电平用作指示光电二极管314在曝光阶段期间的曝光的持续时间和/或强度的代表(proxy)。浮置扩散点FD连接到第二n+扩散阱320。随着经由晶体管TX电荷从光电二极管314转移到浮置扩散点FD,在浮置扩散点FD处的电压电平降低。当光电二极管314在曝光阶段期间的曝光的持续时间和/或强度增加时,在浮置扩散点FD处的电压电平也降低。如果光电二极管314的曝光的持续时间和/或强度低于由晶体管TX栅极中间电压设置的某个水平,则在浮置扩散点FD处的电压水平将不改变,因为没有电荷从光电二极管314转移到浮置扩散点FD。
当第一复位晶体管TRST1被导通时,第一复位晶体管TRST1起作用来使浮置扩散点FD处的电压复位。当在曝光和感测的每个循环之后复位信号RST1在第一复位晶体管TRST1的栅极处被接收到时,第一复位晶体管TRST1被导通。第一复位晶体管TRST1的漏极连接到电压源VDD。第一复位晶体管TRST1的源极连接到浮置扩散点FD。
放大器TS是源极跟随器放大器,其放大它的栅极信号以生成传输到电路342的电压信号VSIG。放大器TS的栅极连接到浮置扩散点FD。放大器TS的漏极连接到电压源VDD。放大器TS的源极连接到互连部350。电压信号VSIG对应于如由在浮置扩散点FD处的电压电平定义的在放大器TS的源极端子处的电压电平。
电路342被设置在第二衬底340中。该电路经由互连部350接收电压信号VSIG,处理该电压信号VSIG,并生成指示光电二极管314被暴露于的光的强度和/或持续时间的数字输出432。
电路342除了其他部件以外还可以包括晶体管TCS、比较器410和计数器418。晶体管TCS在被导通时作为电流源来进行操作。在一个实施例中,电流源TCS的栅极在像素操作的整个曝光阶段和感测阶段被施加有偏置电压VBIAS的脉冲。电流源TCS的漏极连接到互连部305,并且电流源TCS的源极被接地。寄生电容存在于第二衬底340中在电流源TCS和比较器410之间的第二电容器Cs2中。
当在光电二极管314处接收的光强度高于阈值时,电荷在曝光阶段期间转移到浮置扩散点FD,因为晶体管TX被置于中间电压处。作为结果,在放大器TS处的栅极电压逐渐下降,使在互连部305处的电压信号VSIG逐渐下降。
比较器410和计数器418组合地用作单斜率模数转换器(ADC),该ADC产生代表电压信号VSIG的下降速率的数字输出432,其又指示入射在光电二极管314上的光的强度和/或持续时间(如下面参考图5和6详细描述的)。在其操作之后,可以通过向计数器418提供复位信号RST2来使比较器410复位。向计数器418提供复位信号RST2使在计数器418处的计数值复位回到零。
比较器410检测电压信号VSIG达到两个参考电压时的时间。为此目的,比较器410经由互连部350在第一端子处接收电压信号VSIG,在第二端子处接收第一参考电压VREF1,以及在第三端子处接收第二参考电压VREF2。在比较器410检测到电压信号VSIG达到VREF1或VREF2之后,比较器410通过线路428向计数器418发送触发信号。
计数器418对电压信号VSIG从第一参考电压VREF1开始达到第二参考电压VREF2的时钟周期的数量进行计数。计数器418通过线路428可通信地耦合到比较器410,接收时钟信号434和复位信号RST2,并输出数字输出432。在一个实施例中,计数器418响应于接收到第一触发信号而开始计数,并响应于接收到第二触发信号而停止计数。由计数器418提供的数字输出可以是二进制值。数字输出可以用于计算VSIG的斜率,其直接对应于入射在光电二极管上的光的强度。
示例像素操作
本公开的像素结构被配置为在不同阶段(即曝光阶段和感测阶段)期间使用不同的机制来测量高强度光和低强度光。在曝光阶段期间,像素结构测量高强度光,而相同的像素结构测量较低强度光。
图5和图6是示出根据一个实施例的当在曝光阶段期间时的高光强度的测量的曲线图。在曝光阶段,当电压信号VSIG下降时,比较器410相对于两个参考电压(第一参考电压VREF1和第二参考电压VREF2)来比较电压信号VSIG。当电压VSIG达到第一参考电压VREF1时,比较器410通过线路428向计数器418发送开始触发信号,使得计数器418可以基于在计数器418处接收的时钟信号434来开始计数。相反,当电压信号VSIG达到第二参考电压VREF2时,比较器410通过线路428向计数器418发送停止信号以停止计数。基于在由比较器410发送的两个信号之间的(如由在计数器418处的计数值所指示的)时钟周期的数量,可以确定电压信号VSIG的线的斜率。
以图5为例,电压信号VSIG逐渐下降并在时间T1达到第一参考电压VREF1,且然后在时间T2达到第二参考电压VREF2。随后,电压信号VSIG在时间T3进一步下降到饱和电压VSAT,该饱和电压VSAT指示在浮置扩散点FD处的第一电容器Cs1完全饱和,以及电压信号VSIG太低而不能由放大器TS读出。时段Tp指示在T1和T2之间的时间差。
如果电压信号VSIG的线的斜率如图6所示更陡(即,入射在光电二极管上的光的强度更大),则电压信号VSIG在时间T1’和T2’分别达到第一参考电压VREF1和第二参考电压VREF2。T1’和T2’比图5的T1和T2快。此外,在T1’和T2’之间的时间段Tp’比在图5的T1和T2之间的时间段Tp短。
因此,即使光电二极管314在曝光阶段结束之前饱和,通过测量在电压信号VSIG下降到第一参考电压VREF1时的时间和电压信号VSIG下降到第二参考电压VREF2时的时间之间的时间差,也可以确定入射在光电二极管314上的光的强度。
尽管上面主要参考使用比较器410和计数器418描述了实施例,但各种其他类型的电路可以用于测量电压信号VSIG的斜率。
当入射在光电二极管314上的光的强度没有超过阈值时,累积的电荷保留在光电二极管314中,并且在曝光阶段期间没有转移到第二n+扩散阱320。因此在浮置扩散点FD处的电压没有留下变化,并且在曝光阶段期间没有检测到电压信号VSIG减小。在这种情况下,只有晶体管TX在曝光阶段之后的感测阶段被完全导通之后,电压信号VSIG才会改变。当晶体管TX被导通时,在浮置扩散点FD处的电压从它的初始复位电压电平降低到某一电平,并将放大器TS的栅极电压设置到某一电压。作为响应,放大器TS的源极端子也达到某一电压电平。
图7是示出根据一个实施例的在放大器TS在感测阶段被导通之后的电压信号VSIG的电平的测量的曲线图。与图5和图6相反,在互连部350处的电压信号VSIG在曝光阶段之后的整个感测阶段保持相对稳定。
在感测阶段,比较器410在第一端子处被提供有信号电压VSIG,并在第二端子处被提供有第三参考电压VREF3信号。在图7的实施例中,VREF3是从最小预期VSIG值扫描到最大VSIG值的斜波信号。比较器410的第三端子没有被使用并且被置于高阻抗状态中。在感测阶段开始时,计数器418开启。当计数器418基于时钟信号434运行时,第三参考电压VREF3信号逐渐增加。当第三参考电压VREF3信号在时间T4达到电压信号VSIG时,计数器418通过线路428产生停止信号,其使计数器418停止。计数器418的计数值表示在感测阶段的开始时间和第三参考电压VREF3信号达到电压信号VSIG的电压电平时的时间之间的时间段TPU。如果电压信号VSIG较高,计数器值将较高。因此,通过在感测阶段检测计数器值,可以确定电压信号VSIG的电压电平,这又使低于阈值水平的光强度的测量成为可能。
参考电压VREF3可以由信号发生器(未示出)提供。尽管图7的实施例使用线性地增加的参考电压VREF3,但在其他实施例中参考电压VREF3可以以非线性方式增加。
图8是示出根据一个实施例的在弱光条件和强光条件下检测光强度的方法的示意图。在既不导通也不关断晶体管TX的曝光阶段,中间电压被施加800到晶体管TX的栅极。
通过将栅极电压置于中间电压处,当背面照明的光强度超过某个阈值时,电荷从光电二极管移动到第二n+扩散阱。在强光条件下,在光电二极管处接收的光强度高于阈值。作为结果,来自光电二极管的电荷被转移812到第一衬底中的浮置扩散点FD。
像素级互连部将电压信号VSIG从第一衬底传输816到第二衬底。电压信号VSIG表示在浮置扩散点FD处的电压的放大版本。如下面详细描述的,电路经由像素级互连部来接收电压信号VSIG,处理该电压信号VSIG,并生成指示光电二极管被暴露于的光的强度和/或持续时间的数字输出。
第二衬底中的电路检测820在当电压信号VSIG达到第一阈值时的第一时间T1和当电压信号VSIG达到不同于第一阈值的第二阈值时的第二时间T2之间的时间差Tp。第二衬底中的比较器在电压信号VSIG对应于第一参考电压VREF1时的第一时间T1生成第一输出,并且在第一时间T1将第一输出传输到计数器。比较器也在电压信号VSIG对应于高于第一参考电压VREF1的第二参考电压VREF2时的第二时间T2生成第二输出,并且在第二时间T2将第二输出传输到计数器。计数器对在第一时间T1和第二时间T2之间的时钟脉冲的数量进行计数。
在曝光阶段之后的感测阶段,导通电压被施加824到晶体管TX的栅极以将晶体管TX置于饱和状态中。
当在曝光阶段期间入射在光电二极管上的光强度超过阈值强度时,来自光电二极管的电荷被转移828到第一衬底中的浮置扩散点FD。如果光强度没有超过阈值强度,电荷在光电二极管内累积而不转移到浮置扩散点FD。
像素级互连部将电压信号VSIG从第一衬底传输830到第二衬底。在感测阶段期间,电路检测850随时间的过去而增加的参考电压VREF1达到电压信号VSIG时的时间。电压信号VSIG在曝光阶段之后的感测阶段保持相对稳定。比较器被提供有电压信号VSIG和第一参考电压VREF1。在感测阶段开始时,计数器开启。当计数器基于时钟信号运行时,第一参考电压VREF1逐渐增加。当第一参考电压VREF1在时间T4达到电压信号VSIG时,计数器通过线路产生使计数器停止的锁存信号(latch signal)。
在说明书中使用的语言主要为了可读性和教学目的而被选择,并且它可以不被选择为描绘或限制创造性主题。因此,意图是专利权利的范围不由该详细描述限制,而是由在基于其的申请上发布的任何权利要求限制。因此,实施例的公开意图对专利权利的范围是说明性的而不是限制性的,在所附权利要求中阐述了专利权利的范围。
Claims (16)
1.一种在光电传感器中的像素,包括:在第一衬底的一部分中的
光电二极管,
浮置扩散点,以及
在所述光电二极管和所述浮置扩散点之间的晶体管,所述晶体管的栅极被施加有在所述晶体管的关断电压和所述晶体管的导通电压之间的中间电压,以响应于在曝光阶段期间入射在所述光电二极管上的光的强度超过阈值强度而将电荷从所述光电二极管转移到所述浮置扩散点,在所述曝光阶段之后的感测阶段,所述晶体管的所述栅极被施加有所述导通电压,以将所述电荷从所述光电二极管转移到所述浮置扩散点;
放大器,其具有连接到所述浮置扩散点的输入端和连接到像素级互连部以输出信号电压的输出端;以及
在第二衬底中的模数转换器,其具有连接到所述像素级互连部的输入端,
在所述曝光阶段期间,当所述中间电压被施加到所述晶体管的所述栅极时,所述模数转换器确定所述像素级互连部处的所述信号电压的增加或减少的速率,在所述感测阶段期间,当所述导通电压被施加到所述晶体管的所述栅极时,所述模数转换器确定所述像素级互连部处的所述信号电压。
2.根据权利要求1所述的像素,还包括:
第二衬底的一部分,其包括耦合到导线的电路,所述电路被配置成:
检测在当信号电压达到第一阈值时的第一时间和当所述信号电压达到不同于所述第一阈值的第二阈值时的第二时间之间的时间差,所述信号电压表示在所述浮置扩散点处的电压的放大版本,以及
在所述感测阶段期间,检测随时间增加的参考电压达到所述信号电压时的时间,其中,所述参考电压是从最小预期信号电压值扫描到最大信号电压值的斜波信号;以及
像素级互连部,其在所述浮置扩散点和所述导线之间以传输所述信号电压。
3.根据权利要求2所述的像素,其中,所述第一衬底还包括:
第一复位晶体管,其被配置为响应于在所述曝光阶段之后导通所述第一复位晶体管来使所述浮置扩散点处的电压复位。
4.根据权利要求3所述的像素,其中,所述放大器是源极跟随器晶体管。
5.根据权利要求1所述的像素,其中,所述第二衬底还包括:
电流源,其耦合到所述像素级互连部。
6.根据权利要求5所述的像素,其中,所述模数转换器包括:
比较器,其被配置为在所述信号电压对应于第一参考电压时的第一时间生成第一输出,并且在所述信号电压对应于低于所述第一参考电压的第二参考电压时的第二时间生成第二输出;以及
计数器,其耦合到所述比较器以接收所述第一输出和所述第二输出,所述计数器被配置为对在所述第一时间和所述第二时间之间的时钟脉冲的数量进行计数。
7.根据权利要求5所述的像素,其中,所述电流源包括另一晶体管,所述另一晶体管具有在所述感测阶段的一部分期间被施加有偏置电压的栅极。
8.根据权利要求1所述的像素,其中,所述浮置扩散点被配置成在所述感测阶段之后复位到复位电压。
9.一种用于操作像素的方法,所述像素包括在第一衬底中的光电二极管、浮置扩散点以及在所述光电二极管和所述浮置扩散点之间的晶体管,所述方法包括:
在曝光阶段,将中间电压施加到晶体管的栅极,所述中间电压在所述晶体管的关断电压和所述晶体管的导通电压之间,以响应于在所述曝光阶段期间入射在所述光电二极管上的光的强度超过阈值强度而将电荷从所述光电二极管转移到所述浮置扩散点;
在所述曝光阶段之后的感测阶段,将所述导通电压施加到所述晶体管的所述栅极,以将所述电荷从所述光电二极管转移到所述浮置扩散点;以及
其中,所述像素包括放大器,其具有连接到所述浮置扩散点的输入端和连接到像素级互连部以输出信号电压的输出端;以及
在第二衬底中的模数转换器,其具有连接到所述像素级互连部的输入端;
其中,所述方法还包括:
在所述曝光阶段期间,当所述中间电压被施加到所述晶体管的所述栅极时,所述模数转换器确定所述像素级互连部处的所述信号电压的增加或减少的速率;以及
在所述感测阶段期间,当所述导通电压被施加到所述晶体管的所述栅极时,所述模数转换器确定所述像素级互连部处的所述信号电压。
10.根据权利要求9所述的方法,所述方法还包括:
通过像素级互连部将信号电压从所述第一衬底传输到第二衬底,所述信号电压表示在所述浮置扩散点处的电压的放大版本。
11.根据权利要求9所述的方法,其中,通过确定在当所述信号电压达到第一阈值时的第一时间和当所述信号电压达到不同于所述第一阈值的第二阈值时的第二时间之间的时间差来检测所述信号电压的增加或减少的速率。
12.根据权利要求11所述的方法,其中,通过下列操作来确定所述时间差:
由在所述第二衬底中的比较器在所述信号电压对应于第一参考电压时的第一时间生成第一输出;
在所述第一时间将来自所述比较器的所述第一输出传输到计数器;
由所述比较器在所述信号电压对应于高于所述第一参考电压的第二参考电压时的第二时间生成第二输出;
在所述第二时间将来自所述比较器的所述第二输出传输到所述计数器;以及
由所述计数器对在所述第一时间和所述第二时间之间的时钟脉冲的数量进行计数。
13.根据权利要求9所述的方法,所述方法还包括:
响应于在所述曝光阶段之后导通第一复位晶体管来使所述浮置扩散点处的电压复位。
14.根据权利要求9所述的方法,还包括:
在所述感测阶段的一部分期间在所述第二衬底内将偏置电压施加到电流源的栅极,其中,所述电流源耦合到所述像素级互连部。
15.根据权利要求9所述的方法,还包括:
在所述感测阶段之后使所述浮置扩散点复位。
16.根据权利要求9所述的方法,还包括:在所述感测阶段期间,检测变化的参考电压的电压电平与所述信号电压的电压电平一致时的时间,其中,所述参考电压是从最小预期信号电压值扫描到最大信号电压值的斜波信号。
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