KR100775058B1 - 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 - Google Patents
픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/144—Devices controlled by radiation
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Abstract
Description
Claims (20)
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- 층간절연층을 사이에 두고 마주하는 제1 반도체 패턴 및 제2 반도체 패턴;상기 제2 반도체 패턴에 형성된 광전변환소자;상기 제2 반도체 패턴에 형성되고 상기 광전변환소자에서 발생한 신호전하를 상기 제2 반도체 패턴의 제2 전하수집영역으로 이송하기 위한 이송 게이트;상기 제1 반도체 패턴에 형성되고 상기 제2 전하수집영역에 전기적으로 연결된 제1 전하수집영역;상기 제1 및 제2 전하수집영역에 전기적으로 연결되며 상기 제1 반도체 패턴 상에 형성된 소오스 팔로어 게이트;상기 소오스 팔로어 게이트 양측의 제1 반도체 패턴에 형성된 제1 소오스 영역 및 제1 드레인 영역; 그리고상기 제1 드레인 영역 및 상기 제1 전하수집영역 사이의 제1 반도체 패턴 상에 형성된 리셋 게이트를 포함하며,상기 광전변환소자는 상기 제2 반도체 패턴의 내부에 형성된 제1도전형 영역 및 상기 제1도전형의 영역을 감싸도록 상기 제2 반도체 패턴에 형성된 제2도전형의 영역을 포함하며,상기 층간절연층은 제1 층간절연층 및 제2 층간절연층을 포함하며,상기 제1 전하수집영역 및 제2 전하수집영역 사이의 전기적인 연결은:상기 제1 층간절연층을 관통하여 상기 제2 전하수집영역에 연결된 제1 콘택트플러그;상기 제1 층간절연층 상에 형성되고 상기 제1 콘택트플러그에 전기적으로 연결되는 국소 도전 패턴; 그리고,상기 제2 층간절연층을 관통하여 상기 제1 전하수집영역과 상기 국소 도전 패턴을 연결하는 제2 콘택트플러그에 의해서 이루어지는 이미지 센서.
- 층간절연층을 사이에 두고 마주하는 제1 반도체 패턴 및 제2 반도체 패턴;상기 제2 반도체 패턴에 형성된 광전변환소자;상기 제2 반도체 패턴에 형성되고 상기 광전변환소자에서 발생한 신호전하를 상기 제2 반도체 패턴의 제2 전하수집영역으로 이송하기 위한 이송 게이트;상기 제1 반도체 패턴에 형성되고 상기 제2 전하수집영역에 전기적으로 연결된 제1 전하수집영역;상기 제1 및 제2 전하수집영역에 전기적으로 연결되며 상기 제1 반도체 패턴 상에 형성된 소오스 팔로어 게이트;상기 소오스 팔로어 게이트 양측의 제1 반도체 패턴에 형성된 제1 소오스 영역 및 제1 드레인 영역; 그리고상기 제1 드레인 영역 및 상기 제1 전하수집영역 사이의 제1 반도체 패턴 상에 형성된 리셋 게이트를 포함하며,상기 광전변환소자는 상기 제2 반도체 패턴의 내부에 형성된 제1도전형 영역 및 상기 제1도전형의 영역을 감싸도록 상기 제2 반도체 패턴에 형성된 제2도전형의 영역을 포함하며,상기 제1도전형의 영역은 n형 영역이고 상기 제2도전형의 영역은 p형 영역이며 상기 광전변환소자는 포토다이오드이고,상기 제1 전하수집영역은 상기 n형 영역과 떨어져서 상기 이송 게이트 외측의 제1 반도체 패턴에 형성되고,상기 층간절연층은 제1 층간절연층 및 제2 층간절연층을 포함하며,상기 제1 전하수집영역 및 제2 전하수집영역 사이의 전기적인 연결은:상기 제1 층간절연층을 관통하여 상기 제2 전하수집영역에 연결된 제1 콘택트플러그;상기 제1 층간절연층 상에 형성되고 상기 제1 콘택트플러그에 전기적으로 연결되는 국소 도전 패턴; 그리고,상기 제2 층간절연층을 관통하여 상기 제1 전하수집영역과 상기 국소 도전 패턴을 연결하는 제2 콘택트플러그에 의해서 이루어지는 이미지 센서.
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- 청구항 10 항 또는 청구항 제 11 항에 있어서,상기 국소 도전 패턴은 상기 제1 층간절연층을 관통하여 상기 소오스 팔로어 게이트에 전기적으로 연결된 제3 콘택트플러그에 전기적으로 연결되는 이미지 센서.
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Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
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KR1020050091293A KR100775058B1 (ko) | 2005-09-29 | 2005-09-29 | 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 |
US11/524,695 US7671435B2 (en) | 2005-09-29 | 2006-09-21 | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
CN2006101389031A CN1941390B (zh) | 2005-09-29 | 2006-09-21 | 具有两个半导体层的像素、图像传感器及图像处理*** |
TW095135919A TWI328964B (en) | 2005-09-29 | 2006-09-28 | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
US12/684,163 US8508012B2 (en) | 2005-09-29 | 2010-01-08 | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
US13/838,627 US9293501B2 (en) | 2005-09-29 | 2013-03-15 | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
US15/047,444 US9954025B2 (en) | 2005-09-29 | 2016-02-18 | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
US15/937,632 US10249677B2 (en) | 2005-09-29 | 2018-03-27 | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
US16/285,686 US11094732B2 (en) | 2005-09-29 | 2019-02-26 | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
US16/560,347 US11152419B2 (en) | 2005-09-29 | 2019-09-04 | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
US17/340,273 US11862660B2 (en) | 2005-09-29 | 2021-06-07 | Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor |
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KR1020050091293A KR100775058B1 (ko) | 2005-09-29 | 2005-09-29 | 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 |
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KR1020070096399A Division KR101154389B1 (ko) | 2007-09-21 | 2007-09-21 | 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 |
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KR100775058B1 true KR100775058B1 (ko) | 2007-11-08 |
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KR1020050091293A KR100775058B1 (ko) | 2005-09-29 | 2005-09-29 | 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 |
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US (8) | US7671435B2 (ko) |
KR (1) | KR100775058B1 (ko) |
CN (1) | CN1941390B (ko) |
TW (1) | TWI328964B (ko) |
Families Citing this family (139)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8139130B2 (en) | 2005-07-28 | 2012-03-20 | Omnivision Technologies, Inc. | Image sensor with improved light sensitivity |
US8274715B2 (en) | 2005-07-28 | 2012-09-25 | Omnivision Technologies, Inc. | Processing color and panchromatic pixels |
KR100775058B1 (ko) | 2005-09-29 | 2007-11-08 | 삼성전자주식회사 | 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 |
US7916362B2 (en) * | 2006-05-22 | 2011-03-29 | Eastman Kodak Company | Image sensor with improved light sensitivity |
US8031258B2 (en) | 2006-10-04 | 2011-10-04 | Omnivision Technologies, Inc. | Providing multiple video signals from single sensor |
US8049256B2 (en) * | 2006-10-05 | 2011-11-01 | Omnivision Technologies, Inc. | Active pixel sensor having a sensor wafer connected to a support circuit wafer |
KR100882986B1 (ko) * | 2007-09-07 | 2009-02-12 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
KR100935764B1 (ko) * | 2007-12-27 | 2010-01-06 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
US7960768B2 (en) * | 2008-01-17 | 2011-06-14 | Aptina Imaging Corporation | 3D backside illuminated image sensor with multiplexed pixel structure |
US7999870B2 (en) * | 2008-02-01 | 2011-08-16 | Omnivision Technologies, Inc. | Sampling and readout of an image sensor having a sparse color filter array pattern |
US7781716B2 (en) * | 2008-03-17 | 2010-08-24 | Eastman Kodak Company | Stacked image sensor with shared diffusion regions in respective dropped pixel positions of a pixel array |
US7858915B2 (en) * | 2008-03-31 | 2010-12-28 | Eastman Kodak Company | Active pixel sensor having two wafers |
JP2009259872A (ja) * | 2008-04-11 | 2009-11-05 | Rohm Co Ltd | 光電変換装置およびその製造方法、および固体撮像装置 |
US8471939B2 (en) * | 2008-08-01 | 2013-06-25 | Omnivision Technologies, Inc. | Image sensor having multiple sensing layers |
KR20100030768A (ko) * | 2008-09-11 | 2010-03-19 | 삼성전자주식회사 | 보호막 후면에 차광막을 갖는 시모스 이미지 센서 및 그 제조 방법 |
KR101024770B1 (ko) * | 2008-09-30 | 2011-03-24 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
US7902618B2 (en) * | 2008-11-17 | 2011-03-08 | Omni Vision Technologies, Inc. | Backside illuminated imaging sensor with improved angular response |
US9543356B2 (en) * | 2009-03-10 | 2017-01-10 | Globalfoundries Inc. | Pixel sensor cell including light shield |
KR101648200B1 (ko) * | 2009-10-22 | 2016-08-12 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
JP5489681B2 (ja) * | 2009-12-02 | 2014-05-14 | キヤノン株式会社 | 固体撮像装置 |
EP2518768B1 (en) | 2009-12-26 | 2019-03-20 | Canon Kabushiki Kaisha | Solid-state imaging device and imaging system |
CN102792677B (zh) * | 2010-03-08 | 2015-08-05 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
JP5709418B2 (ja) * | 2010-06-30 | 2015-04-30 | キヤノン株式会社 | 固体撮像装置 |
JP2012015274A (ja) * | 2010-06-30 | 2012-01-19 | Canon Inc | 固体撮像装置、及び固体撮像装置の製造方法。 |
JP5570377B2 (ja) * | 2010-09-30 | 2014-08-13 | キヤノン株式会社 | 固体撮像装置 |
US9076706B2 (en) * | 2011-01-07 | 2015-07-07 | Samsung Electronics Co., Ltd. | Image sensor based on depth pixel structure |
TWI415253B (zh) | 2011-05-17 | 2013-11-11 | Novatek Microelectronics Corp | 光學感測器及其製造方法 |
JP5963421B2 (ja) * | 2011-11-17 | 2016-08-03 | オリンパス株式会社 | 固体撮像装置および撮像装置 |
JP6018376B2 (ja) * | 2011-12-05 | 2016-11-02 | キヤノン株式会社 | 固体撮像装置およびカメラ |
JP5987326B2 (ja) * | 2012-01-23 | 2016-09-07 | ソニー株式会社 | 固体撮像素子および信号処理方法、並びに電子機器 |
CN107863362B (zh) | 2012-02-03 | 2022-09-09 | 索尼公司 | 半导体器件和电子设备 |
KR101323001B1 (ko) * | 2012-02-29 | 2013-10-29 | 주식회사 엘지실트론 | 이미지 센서 및 이의 제조 방법 |
US8686342B2 (en) * | 2012-04-09 | 2014-04-01 | Omnivision Technologies, Inc. | Double-sided image sensor formed on a single semiconductor wafer die |
EP2837028B1 (en) * | 2012-04-10 | 2018-11-07 | DRS RSTA Inc. | High density capacitor integrated into focal plane array processing flow |
WO2013155145A1 (en) | 2012-04-10 | 2013-10-17 | Drs Rsta, Inc. | High density capacitor integrated into focal plane array processing flow |
JP6183718B2 (ja) | 2012-06-25 | 2017-08-23 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
JP5814867B2 (ja) * | 2012-06-27 | 2015-11-17 | 株式会社東芝 | 半導体記憶装置 |
JP2014022561A (ja) * | 2012-07-18 | 2014-02-03 | Sony Corp | 固体撮像装置、及び、電子機器 |
US9153616B2 (en) * | 2012-12-26 | 2015-10-06 | Olympus Corporation | Solid-state imaging device and imaging device with circuit elements distributed on multiple substrates, method of controlling solid-state imaging device, and imaging device with circuit elements distributed on multiple substrates |
US8773562B1 (en) | 2013-01-31 | 2014-07-08 | Apple Inc. | Vertically stacked image sensor |
US9293500B2 (en) | 2013-03-01 | 2016-03-22 | Apple Inc. | Exposure control for image sensors |
US9276031B2 (en) * | 2013-03-04 | 2016-03-01 | Apple Inc. | Photodiode with different electric potential regions for image sensors |
US9041837B2 (en) | 2013-03-05 | 2015-05-26 | Apple Inc. | Image sensor with reduced blooming |
US9741754B2 (en) | 2013-03-06 | 2017-08-22 | Apple Inc. | Charge transfer circuit with storage nodes in image sensors |
JP2014199898A (ja) * | 2013-03-11 | 2014-10-23 | ソニー株式会社 | 固体撮像素子および製造方法、並びに、電子機器 |
US9549099B2 (en) * | 2013-03-12 | 2017-01-17 | Apple Inc. | Hybrid image sensor |
US9319611B2 (en) | 2013-03-14 | 2016-04-19 | Apple Inc. | Image sensor with flexible pixel summing |
US9276030B2 (en) * | 2013-03-15 | 2016-03-01 | Sensors Unlimited, Inc. | Read out integrated circuit input/output routing on permanent carrier |
US9356061B2 (en) * | 2013-08-05 | 2016-05-31 | Apple Inc. | Image sensor with buried light shield and vertical gate |
KR101334213B1 (ko) * | 2013-09-02 | 2013-11-29 | (주)실리콘화일 | 칩 적층 이미지 센서 |
US9762890B2 (en) * | 2013-11-08 | 2017-09-12 | Samsung Electronics Co., Ltd. | Distance sensor and image processing system including the same |
US9596423B1 (en) | 2013-11-21 | 2017-03-14 | Apple Inc. | Charge summing in an image sensor |
US9319613B2 (en) * | 2013-12-05 | 2016-04-19 | Omnivision Technologies, Inc. | Image sensor having NMOS source follower with P-type doping in polysilicon gate |
US9596420B2 (en) | 2013-12-05 | 2017-03-14 | Apple Inc. | Image sensor having pixels with different integration periods |
US9473706B2 (en) | 2013-12-09 | 2016-10-18 | Apple Inc. | Image sensor flicker detection |
US10285626B1 (en) | 2014-02-14 | 2019-05-14 | Apple Inc. | Activity identification using an optical heart rate monitor |
US9277144B2 (en) | 2014-03-12 | 2016-03-01 | Apple Inc. | System and method for estimating an ambient light condition using an image sensor and field-of-view compensation |
US9232150B2 (en) | 2014-03-12 | 2016-01-05 | Apple Inc. | System and method for estimating an ambient light condition using an image sensor |
US9584743B1 (en) | 2014-03-13 | 2017-02-28 | Apple Inc. | Image sensor with auto-focus and pixel cross-talk compensation |
TWI656631B (zh) * | 2014-03-28 | 2019-04-11 | 日商半導體能源研究所股份有限公司 | 攝像裝置 |
US9497397B1 (en) | 2014-04-08 | 2016-11-15 | Apple Inc. | Image sensor with auto-focus and color ratio cross-talk comparison |
KR102380829B1 (ko) * | 2014-04-23 | 2022-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 |
US9538106B2 (en) | 2014-04-25 | 2017-01-03 | Apple Inc. | Image sensor having a uniform digital power signature |
US9686485B2 (en) | 2014-05-30 | 2017-06-20 | Apple Inc. | Pixel binning in an image sensor |
US11205669B2 (en) * | 2014-06-09 | 2021-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including photoelectric conversion element |
CN104795418B (zh) * | 2015-04-24 | 2018-09-18 | 上海珏芯光电科技有限公司 | 感光成像装置及其制造方法 |
US10341592B2 (en) | 2015-06-09 | 2019-07-02 | Sony Semiconductor Solutions Corporation | Imaging element, driving method, and electronic device |
KR102471593B1 (ko) * | 2015-06-09 | 2022-11-29 | 에스케이하이닉스 주식회사 | 수직 전송 게이트를 갖는 이미지 센서 및 그 제조방법 |
TWI701819B (zh) * | 2015-06-09 | 2020-08-11 | 日商索尼半導體解決方案公司 | 攝像元件、驅動方法及電子機器 |
KR102109316B1 (ko) * | 2015-09-30 | 2020-05-12 | 가부시키가이샤 니콘 | 촬상 소자 및 전자 카메라 |
CN105552096A (zh) * | 2015-12-30 | 2016-05-04 | 东南大学—无锡集成电路技术研究所 | 一种像素内部金属层实施等离子体滤色的图像传感器芯片 |
US9728575B1 (en) * | 2016-02-08 | 2017-08-08 | Semiconductor Components Industries, Llc | Pixel and circuit design for image sensors with hole-based photodiodes |
JP6904730B2 (ja) * | 2016-03-08 | 2021-07-21 | 株式会社半導体エネルギー研究所 | 撮像装置 |
CN107195645B (zh) | 2016-03-14 | 2023-10-03 | 松下知识产权经营株式会社 | 摄像装置 |
US9912883B1 (en) | 2016-05-10 | 2018-03-06 | Apple Inc. | Image sensor with calibrated column analog-to-digital converters |
KR102564851B1 (ko) * | 2016-05-16 | 2023-08-09 | 에스케이하이닉스 주식회사 | 이미지 센서 |
KR102625444B1 (ko) * | 2016-08-03 | 2024-01-15 | 삼성전자주식회사 | 반도체 장치 |
JP2018046088A (ja) * | 2016-09-13 | 2018-03-22 | セイコーエプソン株式会社 | 固体撮像装置及び電子機器 |
JP6818875B2 (ja) | 2016-09-23 | 2021-01-20 | アップル インコーポレイテッドApple Inc. | 積層背面照射型spadアレイ |
US10917625B1 (en) | 2016-10-20 | 2021-02-09 | Facebook Technologies, Llc | Time multiplexed dual-band sensor |
US10075663B2 (en) * | 2017-01-20 | 2018-09-11 | Semiconductor Components Industries, Llc | Phase detection pixels with high speed readout |
US10656251B1 (en) | 2017-01-25 | 2020-05-19 | Apple Inc. | Signal acquisition in a SPAD detector |
CN110235024B (zh) | 2017-01-25 | 2022-10-28 | 苹果公司 | 具有调制灵敏度的spad检测器 |
US10962628B1 (en) | 2017-01-26 | 2021-03-30 | Apple Inc. | Spatial temporal weighting in a SPAD detector |
US9881964B1 (en) * | 2017-02-08 | 2018-01-30 | Omnivision Technologies, Inc. | Image sensor with inverted source follower |
JP2018190766A (ja) * | 2017-04-28 | 2018-11-29 | ソニーセミコンダクタソリューションズ株式会社 | 半導体デバイス、製造方法、撮像素子、および電子機器 |
CN107665900B (zh) * | 2017-05-31 | 2020-11-13 | 上海华力微电子有限公司 | Uts图像传感器的制备方法 |
US10917589B2 (en) * | 2017-06-26 | 2021-02-09 | Facebook Technologies, Llc | Digital pixel with extended dynamic range |
US10419701B2 (en) | 2017-06-26 | 2019-09-17 | Facebook Technologies, Llc | Digital pixel image sensor |
US10686996B2 (en) | 2017-06-26 | 2020-06-16 | Facebook Technologies, Llc | Digital pixel with extended dynamic range |
US10622538B2 (en) | 2017-07-18 | 2020-04-14 | Apple Inc. | Techniques for providing a haptic output and sensing a haptic input using a piezoelectric body |
US10726627B2 (en) | 2017-07-25 | 2020-07-28 | Facebook Technologies, Llc | Sensor system based on stacked sensor layers |
US11568609B1 (en) | 2017-07-25 | 2023-01-31 | Meta Platforms Technologies, Llc | Image sensor having on-chip compute circuit |
US10825854B2 (en) | 2017-08-16 | 2020-11-03 | Facebook Technologies, Llc | Stacked photo sensor assembly with pixel level interconnect |
US10598546B2 (en) | 2017-08-17 | 2020-03-24 | Facebook Technologies, Llc | Detecting high intensity light in photo sensor |
US10440301B2 (en) | 2017-09-08 | 2019-10-08 | Apple Inc. | Image capture device, pixel, and method providing improved phase detection auto-focus performance |
US11393867B2 (en) | 2017-12-06 | 2022-07-19 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
US11057581B2 (en) | 2018-01-24 | 2021-07-06 | Facebook Technologies, Llc | Digital pixel array with multi-stage readouts |
US10827142B2 (en) | 2018-03-02 | 2020-11-03 | Facebook Technologies, Llc | Digital pixel array with adaptive exposure |
US10969273B2 (en) | 2018-03-19 | 2021-04-06 | Facebook Technologies, Llc | Analog-to-digital converter having programmable quantization resolution |
US11054632B1 (en) | 2018-03-21 | 2021-07-06 | Facebook Technologies, Llc | Liquid filled pixelated film |
US10553180B1 (en) | 2018-03-21 | 2020-02-04 | Facebook Technologies, Llc | Dynamically structured protective film for maximum display resolution |
US11004881B2 (en) | 2018-04-03 | 2021-05-11 | Facebook Technologies, Llc | Global shutter image sensor |
US10923523B2 (en) | 2018-04-16 | 2021-02-16 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
US10848681B2 (en) | 2018-04-17 | 2020-11-24 | Facebook Technologies, Llc | Image reconstruction from image sensor output |
US10560646B2 (en) * | 2018-04-19 | 2020-02-11 | Teledyne Scientific & Imaging, Llc | Global-shutter vertically integrated pixel with high dynamic range |
US10685594B2 (en) | 2018-05-08 | 2020-06-16 | Facebook Technologies, Llc | Calibrating brightness variation in a display |
US11233085B2 (en) | 2018-05-09 | 2022-01-25 | Facebook Technologies, Llc | Multi-photo pixel cell having vertical gate structure |
US10804926B2 (en) | 2018-06-08 | 2020-10-13 | Facebook Technologies, Llc | Charge leakage compensation in analog-to-digital converter |
US11906353B2 (en) | 2018-06-11 | 2024-02-20 | Meta Platforms Technologies, Llc | Digital pixel with extended dynamic range |
US11089210B2 (en) | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Configurable image sensor |
US11089241B2 (en) | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Pixel cell with multiple photodiodes |
US11463636B2 (en) | 2018-06-27 | 2022-10-04 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
US10897586B2 (en) | 2018-06-28 | 2021-01-19 | Facebook Technologies, Llc | Global shutter image sensor |
US11019294B2 (en) | 2018-07-18 | 2021-05-25 | Apple Inc. | Seamless readout mode transitions in image sensors |
US10848693B2 (en) | 2018-07-18 | 2020-11-24 | Apple Inc. | Image flare detection using asymmetric pixels |
US10931884B2 (en) | 2018-08-20 | 2021-02-23 | Facebook Technologies, Llc | Pixel sensor having adaptive exposure time |
US11956413B2 (en) | 2018-08-27 | 2024-04-09 | Meta Platforms Technologies, Llc | Pixel sensor having multiple photodiodes and shared comparator |
US11595602B2 (en) | 2018-11-05 | 2023-02-28 | Meta Platforms Technologies, Llc | Image sensor post processing |
KR20210092725A (ko) * | 2018-11-13 | 2021-07-26 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 장치 및 전자 기기 |
CN109560097A (zh) * | 2018-11-21 | 2019-04-02 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
US11233966B1 (en) | 2018-11-29 | 2022-01-25 | Apple Inc. | Breakdown voltage monitoring for avalanche diodes |
US11102430B2 (en) | 2018-12-10 | 2021-08-24 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
US11888002B2 (en) | 2018-12-17 | 2024-01-30 | Meta Platforms Technologies, Llc | Dynamically programmable image sensor |
US11962928B2 (en) | 2018-12-17 | 2024-04-16 | Meta Platforms Technologies, Llc | Programmable pixel array |
KR20200085983A (ko) * | 2019-01-07 | 2020-07-16 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
US11218660B1 (en) | 2019-03-26 | 2022-01-04 | Facebook Technologies, Llc | Pixel sensor having shared readout structure |
US11943561B2 (en) | 2019-06-13 | 2024-03-26 | Meta Platforms Technologies, Llc | Non-linear quantization at pixel sensor |
CN113841244A (zh) * | 2019-06-26 | 2021-12-24 | 索尼半导体解决方案公司 | 摄像装置 |
US11936998B1 (en) | 2019-10-17 | 2024-03-19 | Meta Platforms Technologies, Llc | Digital pixel sensor having extended dynamic range |
US11935291B2 (en) | 2019-10-30 | 2024-03-19 | Meta Platforms Technologies, Llc | Distributed sensor system |
US11948089B2 (en) | 2019-11-07 | 2024-04-02 | Meta Platforms Technologies, Llc | Sparse image sensing and processing |
US11902685B1 (en) | 2020-04-28 | 2024-02-13 | Meta Platforms Technologies, Llc | Pixel sensor having hierarchical memory |
US11825228B2 (en) | 2020-05-20 | 2023-11-21 | Meta Platforms Technologies, Llc | Programmable pixel array having multiple power domains |
US11910114B2 (en) | 2020-07-17 | 2024-02-20 | Meta Platforms Technologies, Llc | Multi-mode image sensor |
US11563910B2 (en) | 2020-08-04 | 2023-01-24 | Apple Inc. | Image capture devices having phase detection auto-focus pixels |
US11956560B2 (en) | 2020-10-09 | 2024-04-09 | Meta Platforms Technologies, Llc | Digital pixel sensor having reduced quantization operation |
US11935575B1 (en) | 2020-12-23 | 2024-03-19 | Meta Platforms Technologies, Llc | Heterogeneous memory system |
US11546532B1 (en) | 2021-03-16 | 2023-01-03 | Apple Inc. | Dynamic correlated double sampling for noise rejection in image sensors |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060108378A (ko) * | 2005-04-13 | 2006-10-18 | (주)실리콘화일 | 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5910265A (ja) | 1982-07-09 | 1984-01-19 | Hitachi Ltd | 光センサアレイ装置 |
JPH0680759B2 (ja) | 1985-10-17 | 1994-10-12 | 田中貴金属工業株式会社 | チツプオンボ−ドのリ−ドピン |
JPS6292365A (ja) | 1985-10-18 | 1987-04-27 | Fuji Photo Film Co Ltd | 半導体装置およびその製造方法 |
JPH03225868A (ja) * | 1990-01-30 | 1991-10-04 | Hitachi Ltd | 固体撮像素子とそれを用いた撮像装置 |
JPH0548825A (ja) | 1991-08-16 | 1993-02-26 | Fuji Xerox Co Ltd | カラ−画像読取用イメ−ジセンサ |
JP3406935B2 (ja) * | 1994-01-31 | 2003-05-19 | キヤノン株式会社 | 撮像装置 |
US5936261A (en) | 1998-11-18 | 1999-08-10 | Hewlett-Packard Company | Elevated image sensor array which includes isolation between the image sensors and a unique interconnection |
CN1344427A (zh) * | 1999-03-04 | 2002-04-10 | 马库斯·伯姆 | 图象传感器 |
JP3759435B2 (ja) * | 2001-07-11 | 2006-03-22 | ソニー株式会社 | X−yアドレス型固体撮像素子 |
JP2003215255A (ja) | 2002-01-25 | 2003-07-30 | Toshiba Corp | X線検出器 |
KR20030096659A (ko) * | 2002-06-17 | 2003-12-31 | 삼성전자주식회사 | 이미지 센서의 화소 어레이 영역, 그 구조체 및 그 제조방법 |
KR100534214B1 (ko) | 2003-04-30 | 2005-12-08 | (주)에스티비 | 휴대용 단말기의 2차 전지 충,방전 상태 표시 방법 및 그장치 |
KR20040093908A (ko) | 2003-04-30 | 2004-11-09 | 매그나칩 반도체 유한회사 | 씨모스 이미지 센서의 단위화소 |
US6847051B2 (en) * | 2003-05-23 | 2005-01-25 | Micron Technology, Inc. | Elevated photodiode in an image sensor |
US7279729B2 (en) * | 2003-05-26 | 2007-10-09 | Stmicroelectronics S.A. | Photodetector array |
US7102184B2 (en) * | 2003-06-16 | 2006-09-05 | Micron Technology, Inc. | Image device and photodiode structure |
JP4046067B2 (ja) | 2003-11-04 | 2008-02-13 | ソニー株式会社 | 固体撮像素子の製造方法 |
KR100614793B1 (ko) * | 2004-09-23 | 2006-08-22 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법. |
US7205823B2 (en) | 2005-02-23 | 2007-04-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Oscillating buffer with single gate oxide devices |
TW201101476A (en) * | 2005-06-02 | 2011-01-01 | Sony Corp | Semiconductor image sensor module and method of manufacturing the same |
FR2888989B1 (fr) * | 2005-07-21 | 2008-06-06 | St Microelectronics Sa | Capteur d'images |
KR100775058B1 (ko) | 2005-09-29 | 2007-11-08 | 삼성전자주식회사 | 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 |
-
2005
- 2005-09-29 KR KR1020050091293A patent/KR100775058B1/ko active IP Right Grant
-
2006
- 2006-09-21 CN CN2006101389031A patent/CN1941390B/zh active Active
- 2006-09-21 US US11/524,695 patent/US7671435B2/en active Active
- 2006-09-28 TW TW095135919A patent/TWI328964B/zh active
-
2010
- 2010-01-08 US US12/684,163 patent/US8508012B2/en active Active
-
2013
- 2013-03-15 US US13/838,627 patent/US9293501B2/en active Active
-
2016
- 2016-02-18 US US15/047,444 patent/US9954025B2/en active Active
-
2018
- 2018-03-27 US US15/937,632 patent/US10249677B2/en active Active
-
2019
- 2019-02-26 US US16/285,686 patent/US11094732B2/en active Active
- 2019-09-04 US US16/560,347 patent/US11152419B2/en active Active
-
2021
- 2021-06-07 US US17/340,273 patent/US11862660B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060108378A (ko) * | 2005-04-13 | 2006-10-18 | (주)실리콘화일 | 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법 |
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