CN105140271B - 薄膜晶体管、薄膜晶体管的制造方法及显示装置 - Google Patents

薄膜晶体管、薄膜晶体管的制造方法及显示装置 Download PDF

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CN105140271B
CN105140271B CN201510420701.5A CN201510420701A CN105140271B CN 105140271 B CN105140271 B CN 105140271B CN 201510420701 A CN201510420701 A CN 201510420701A CN 105140271 B CN105140271 B CN 105140271B
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oxide
tft
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film transistor
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CN105140271A (zh
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李文辉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种薄膜晶体管的制造方法，其包括在所述基板上形成第一金属层，通过构图工艺使第一金属层形成包括栅极的图案；在上述基板及第一金属层上形成栅极绝缘层，栅极绝缘层覆盖所述基板的表面及所述栅极；在所述栅极绝缘层上形成正投影于所述栅极的氧化物导体层；在形成栅极绝缘层的基板上形成第二金属层，图案化所述第二金属层，形成所述薄膜晶体管的源极及漏极，其中，所述源极和漏极均覆盖部分所述氧化物导体层；对未覆盖源极与漏极且位于源极与漏极之间的氧化物导体层进行等离子表面处理，使所述未覆盖源极与漏极的氧化物导体层形成第一氧化物沟道层；在所述基板及所述图案化的第二金属层上形成的绝缘保护层，对所述绝缘保护层进行图案化。

Description

薄膜晶体管、薄膜晶体管的制造方法及显示装置
技术领域
本发明涉及薄膜晶体管的制造领域，尤其涉及一种薄膜晶体管、薄膜晶体管的制造方法及显示装置。
背景技术
目前广泛应用的Oxide薄膜晶体管采用氧化物半导体作为有源层，具有迁移率大、开态电流高、开关特性更优、均匀性更好的特点，可以适用于需要快速响应和较大电流的应用，如高频、高分辨率、大尺寸的显示器以及有机发光显示器等。现有技术中薄膜晶体管包括栅线及栅极，半导体层，源漏极，钝化层及像素电极等。当在制造过程中采用惯用的电阻值低的金属材料构成的源漏电极层和氧化物半导体膜来直接接触的薄膜晶体管结构时，容易在源漏电极层和氧化物半导体膜的接触面形成肖特基结的现象，影响薄膜晶体管的导电性能。
发明内容
本发明提供一种薄膜晶体管的制造方法，避免在源漏电极层和氧化物半导体膜的接触面形成肖特基结的现象，保证薄膜晶体管性能。
本发明还提供一种薄膜晶体管及显示装置
本发明提供一种薄膜晶体管的制造方法，所述薄膜晶体管的制造方法包括：
提供一基板；
在所述基板上形成第一金属层，通过构图工艺使第一金属层形成包括栅极的图案；
在上述基板及第一金属层上形成栅极绝缘层，栅极绝缘层覆盖所述基板的表面及所述栅极；
在所述栅极绝缘层上形成正投影于所述栅极的氧化物导体层；其中，所述氧化物导体层采用物理气相沉积方式形成；
在形成栅极绝缘层的基板上形成第二金属层，图案化所述第二金属层，形成所述薄膜晶体管的源极及漏极，其中，所述源极和漏极均覆盖部分所述氧化物导体层；
对未覆盖源极与漏极且位于源极与漏极之间的氧化物导体层进行等离子表面处理，使所述未覆盖源极与漏极的氧化物导体层形成第一氧化物沟道层；
在所述基板及所述图案化的第二金属层上形成的绝缘保护层，对所述绝缘保护层进行图案化。
其中，所述等离子表面处理采用氩气与氧气混合体。
其中，所述氧化物导体层的材料为含氧量在0至20％之间的氧化铟镓锌(IGZO)、氧化锌(ZnO)、氧化铟锌(InZnO)或氧化锌锡(ZnSnO)。
其中，在步骤“在所述栅极绝缘层上形成正投影于所述栅极的氧化物导体层”之前，所述薄膜晶体管的制造方法还包括在所述栅极绝缘层上形成正投影于所述栅极的第二氧化物沟道层的步骤；其中，所述第二氧化物沟道层位于栅极与所述氧化物导体层之间，并且第二氧化物沟道层正投影于氧化物导体层。
其中，所述第二氧化物沟道层的材料为含氧量为4％-50％之间的氧化铟镓锌(IGZO)、氧化锌(ZnO)、氧化铟锌(InZnO)或氧化锌锡(ZnSnO)。
其中，所述的薄膜晶体管的制造方法还包括在所述基板及所述图案化的第二金属层上形成的绝缘保护层，对所述绝缘保护层进行图案化的步骤。
其中，所述栅极绝缘层与所述绝缘保护层采用氧化硅(SiOx)、氮化硅(SiNx)与氮氧化硅(SiNxOy)中的一种制成。
本发明提供一种薄膜晶体管，所述薄膜晶体管包括：
一栅极；
一栅绝缘层，覆盖所述栅极；
一氧化物层，覆盖于所述栅绝缘层上且位于所述栅极正上方，所述氧化物层包括一氧化物沟道层以及位于所述氧化物沟道层相对两侧的氧化物导体层；以及
一源极与一漏极，位于所述栅绝缘层与所述氧化物沟道层相对两侧的化物导体层上，且所述源极与所述漏极彼此电性绝缘。
本发明提供一种薄膜晶体管，所述薄膜晶体管包括：
一栅极；
一栅绝缘层，覆盖所述栅极；
一第二氧化物沟道层，覆盖于所述栅绝缘层上且位于所述栅极正上方；
一氧化物层，覆盖于所述第二氧化物沟道层正上方，所述氧化物层包括一第一氧化物沟道层以及位于所述第一氧化物沟道层相对两侧的氧化物导体层；以及
一源极与一漏极，位于所述栅绝缘层与所述第一氧化物沟道层相对两侧的氧化物导体层上，且所述源极与所述漏极彼此电性绝缘。
本发明提供一种显示装置，其包括以上所述的薄膜晶体管。
本发明本发明的薄膜晶体管的制造方法在栅极绝缘层上形成含氧量少的氧化物导体层与源极和漏极接触，保证源极和漏极与氧化物导体层良好电性接触，在通过等离子表面处理方式将未被覆盖的氧化物导体层位于所述源极和漏极之间的部分形成含氧量高的氧化物沟道层，即氧化物半导体层，实现晶体管的良好的导电性能。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一较佳实施方式的薄膜晶体管的制造方法的流程图。
图2至图8为本发明较佳实施方式的薄膜晶体管方法的各个制造流程中薄膜晶体管的截面示意图。
图9为本发明另一较佳实施方式的薄膜晶体管的制造方法的流程图。
图10为图9所述的薄膜晶体管的制造方法的形成的薄膜晶体管截面示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，其为本发明一较佳实施方式的薄膜晶体管的制造方法的流程图。所述薄膜晶体管属于氧化物半导体结构晶体管。在阐述具体制备方法之前，应所述理解，在本发明中，所述图案化即是指构图工艺，可包括光刻工艺，或，包括光刻工艺以及刻蚀步骤，同时还可以包括打印、喷墨等其他用于形成预定图形的工艺；光刻工艺，是指包括成膜、曝光、显影，等工艺过程的利用光刻胶、掩模板、曝光机等形成图形的工艺。可根据本发明中所形成的结构选择相应的构图工艺。
所述薄膜晶体管的制造方法制造方法包括如下步骤。
步骤S1，提供一基板10。请一并参阅图2，在本实施方式中，所述基板10为一玻璃基板。可以理解地，在其他实施方式中，所述基板10并不仅限于为玻璃基板。
请一并参阅图3，步骤S2，在所述基板10上形成第一金属层(图未示)，通过构图工艺使第一金属12层形成包括栅极12的图案；具体的，在所述基板10的一表面上形成所述第一金属层，以作为所述薄膜晶体管10的栅极12。所述第一金属层的材质选自铜、钨、铬、铝及其组合的其中之一。本实施方式中通过现有技术的涂光阻、曝光、显影等构图工艺对所述第一金属层图案化形成栅极12。
请一并参阅图4，步骤S3，在上述基板10及图案化的第一金属层上形成栅极绝缘层13，栅极绝缘层13覆盖所述基板10的表面及所述栅极。具体的在所述基板10未覆盖所述第一金属层的表面及所述栅极12上形成所述栅极绝缘层130。所述栅极绝缘层13的材质选择氧化硅、氮化硅层，氮氧化硅层及其组合的其中之一。
请一并参阅图5，步骤S4，在所述栅极绝缘层13上形成正投影于所述栅极12的氧化物导体层14；其中，所述氧化物导体层14采用物理气相沉积方式形成。本实施例中，所述氧化物导体层14的材料为含氧量在0至20％之间的氧化铟镓锌(IGZO)、氧化锌(ZnO)、氧化铟锌(InZnO)或氧化锌锡(ZnSnO)。优选的，所述所述氧化物导体层14采用含氧量0-％10的氧化铟镓锌(IGZO)。
请一并参阅图6，步骤S5，在成型栅极绝缘层13的基板上形成第二金属层(图未示)，图案化所述第二金属层，形成所述薄膜晶体管的源极15及漏极16，其中，所述源极15和漏极16均覆盖部分所述氧化物导体层14。
具体的，所述第二金属层与所述氧化物导体层14及所述栅极绝缘层13依次层叠设置。通过现有技术的构图工艺对所述第二金属层进行图案化形成如图所示的源极15和漏极16。所述第二金属层的材质选自铜、钨、铬、铝及其组合的其中之一。
请一并参阅图7，步骤S6，对未覆盖源极15与漏极16且位于源极15与漏极16之间的氧化物导体层14进行等离子表面处理，使所述未覆盖源极15与漏极16的氧化物导体层14形成第一氧化物沟道层17。
其中，通过进行等离子表面处理后的所述氧化物导体层14用于形成所述薄膜晶体管的源极15和漏极16之间导通或者断开的通道。所述等离子表面处理是采用氩气与氧气混合体，目的是将位于源极15与漏极16之间的未覆盖源极15与漏极16的氧化物导体层14部分进行补氧修复，形成含氧量较高的氧化物半导体，即所述的第一氧化物沟道层17。本实施例中，所述第一氧化物沟道层17用于源极15和漏极16之间导通或者断开的通道。所述第一氧化物沟道层17两侧分别与所述源极15及漏极16接触的氧化物导体层14部分相当于欧姆接触层的作用，源极15和漏极16可分别通过位于其下的氧化物导体层14与第一氧化物沟道层17形成一良好的欧姆接触(ohmic contact)，具有低阻止，实现源极15通过第一氧化物沟道层17到漏极16良好的通电性能。
本实施例中，第二金属层的材料一般是金属材料。但，本发明不限于此，在其他实施例中，第二金属层的材料也可以使用其他导电材料，如合金、金属材料的氮化物、金属材料的氧化物、金属材料的氮氧化物或是金属材料与其它导材料的堆叠层。
请参阅图8，步骤S7，在所述基板10及所述图案化的第二金属层(源极15和漏极16)上形成的绝缘保护层19，对所述绝缘保护层19进行图案化。所述栅极绝缘层13与所述绝缘保护层19采用氧化硅(SiOx)、氮化硅(SiNx)与氮氧化硅(SiNxOy)中的一种制成。到此步骤，本实施例中的薄膜晶体管制造方法完成。
进一步的，所述栅极绝缘层13与所述绝缘保护层19采用氧化硅(SiOx)、氮化硅(SiNx)与氮氧化硅(SiNxOy)中的一种制成。
本发明的薄膜晶体管的制造方法在栅极绝缘层13上形成含氧量少的氧化物导体层14与源极15和漏极16接触，保证源极15和漏极16与氧化物导体层14良好电性接触，在通过等离子表面处理方式将未被覆盖的氧化物导体层14位于所述源极15和漏极16之间的部分形成含氧量高的氧化物沟道层，即氧化物半导体层，实现晶体管的良好的导电性能。
针对上述薄膜晶体管制造方法，本发明还涉及一种薄膜晶体管，其包括一栅极，一栅绝缘层，覆盖所述栅极；一氧化物层，覆盖于所述栅绝缘层上且位于所述栅极正上方，所述氧化物层包括一氧化物沟道层以及位于所述氧化物沟道层相对两侧的化物导体层；以及一源极与一漏极，位于所述栅绝缘层与所述氧化物沟道层相对两侧的化物导体层上，且所述源极与所述漏极彼此电性绝缘。
请参阅图9，本发明的另一实施例中，与上述方法不同的在于，在步骤S3与步骤S4之间，所述薄膜晶体管的制造方法还包括在步骤S3A，所述栅极绝缘层13上形成正投影于所述栅极12的第二氧化物沟道层18的步骤；其中，所述第二氧化物沟道层18位于栅极12与所述氧化物导体层14之间，并且第二氧化物沟道层18正投影于氧化物导体层14。所述源极15及漏极16分别与所述第一氧化物沟道层17两侧的氧化物导体层14部分接触，所述所述第一氧化物沟道层17与第二氧化物沟道层18共同构成所述晶体管的沟道。
其中，所述第二氧化物沟道层18的材料为含氧量为4％-50％之间的氧化铟镓锌(IGZO)、氧化锌(ZnO)、氧化铟锌(InZnO)或氧化锌锡(ZnSnO)。本实施例中，优选的所述第二氧化物沟道层170的材料为含氧量为5％-200％之间的氧化铟镓锌(IGZO)制成。
请参阅图10，针对本实施方式的薄膜晶体管的制造方法本发明还提供一种薄膜晶体管，其包括一栅极，一栅绝缘层，覆盖所述栅极；一第二氧化物沟道层，覆盖于所述栅绝缘层上且位于所述栅极正上方；一氧化物层，覆盖于所述栅绝缘层上且位于所述栅极正上方，所述氧化物层包括一第一氧化物沟道层以及位于所述第一氧化物沟道层相对两侧的化物导体层；以及一源极与一漏极，位于所述栅绝缘层与所述第一氧化物沟道层相对两侧的氧化物导体层上，且所述源极与所述漏极彼此电性绝缘。
本发明还包括以上两个方式的薄膜晶体管的显示装置，通过本发明实施例薄膜晶体管的制造方法形成的显示装置，可以为：液晶面板、液晶电视、液晶显示器、OLED面板、OLED电视、电子纸、数码相框、手机等。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (6)

1.一种薄膜晶体管的制造方法，其特征在于，所述薄膜晶体管的制造方法包括：
提供一基板；
在所述基板上形成第一金属层，通过构图工艺使第一金属层形成包括栅极的图案；
在上述基板及第一金属层上形成栅极绝缘层，栅极绝缘层覆盖所述基板的表面及所述栅极；
在所述栅极绝缘层上形成正投影于所述栅极的氧化物导体层；其中，所述氧化物导体层采用物理气相沉积方式形成,且所述氧化物导体层的材料为含氧量在0至20％之间的氧化铟镓锌(IGZO)、氧化锌(ZnO)、氧化铟锌(InZnO)或氧化锌锡(ZnSnO)；
在形成栅极绝缘层的基板上形成第二金属层，图案化所述第二金属层，形成所述薄膜晶体管的源极及漏极，其中，所述源极和漏极均覆盖部分所述氧化物导体层；
对未覆盖源极与漏极且位于源极与漏极之间的氧化物导体层进行等离子表面处理，使所述未覆盖源极与漏极的氧化物导体层形成第一氧化物沟道层；
在所述基板及所述图案化的第二金属层上形成的绝缘保护层，对所述绝缘保护层进行图案化。
2.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，所述等离子表面处理采用氩气与氧气混合体。
3.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，在步骤“在所述栅极绝缘层上形成正投影于所述栅极的氧化物导体层”之前，所述薄膜晶体管的制造方法还包括在所述栅极绝缘层上形成正投影于所述栅极的第二氧化物沟道层的步骤；其中，所述第二氧化物沟道层位于栅极与所述氧化物导体层之间，并且第二氧化物沟道层正投影于氧化物导体层。
4.如权利要求3所述的薄膜晶体管的制造方法，其特征在于，所述第二氧化物沟道层的材料为含氧量为4％-50％之间的氧化铟镓锌(IGZO)、氧化锌(ZnO)、氧化铟锌(InZnO)或氧化锌锡(ZnSnO)。
5.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，所述的薄膜晶体管的制造方法还包括在所述基板及所述图案化的第二金属层上形成的绝缘保护层，对所述绝缘保护层进行图案化的步骤。
6.如权利要求5所述的薄膜晶体管的制造方法，其特征在于，所述栅极绝缘层与所述绝缘保护层采用氧化硅(SiOx)、氮化硅(SiNx)与氮氧化硅(SiNxOy)中的一种制成。
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