CN104966698B - 阵列基板、阵列基板的制造方法及显示装置 - Google Patents

阵列基板、阵列基板的制造方法及显示装置 Download PDF

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CN104966698B
CN104966698B CN201510419425.0A CN201510419425A CN104966698B CN 104966698 B CN104966698 B CN 104966698B CN 201510419425 A CN201510419425 A CN 201510419425A CN 104966698 B CN104966698 B CN 104966698B
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李文辉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种阵列基板的制造方法，其特征在于，所述阵列基板的制造方法包括：在所述基板上形成第一金属层，通过构图工艺使第一金属层形成包括栅极的图案；在上述基板及第一金属层上形成栅极绝缘层，在所述栅极绝缘层上形成正投影于所述栅极的氧化物半导体层；在所述氧化物半导体层上设置光阻层，而位于所述氧化物半导体层上沟道区域两侧为第一氧化物半导体层及第二氧化物半导体层；对设置有光阻层的所述第一氧化物半导体层及第二氧化物半导体层进行等离子处理，移除所述光阻层；在基板上形成蚀刻阻挡层；在所述基板上形成源极及漏极，其中，所述源极与第一氧化物导体层接触，所述漏极与第二氧化物导体层接触。

Description

阵列基板、阵列基板的制造方法及显示装置
技术领域
本发明涉及阵列基板的制造领域，尤其涉及一种阵列基板、阵列基板的制造方法及显示装置。
背景技术
目前广泛应用的Oxide阵列基板采用氧化物半导体作为有源层，具有迁移率大、开态电流高、开关特性更优、均匀性更好的特点，可以适用于需要快速响应和较大电流的应用，如高频、高分辨率、大尺寸的显示器以及有机发光显示器等。现有技术中阵列基板包括栅线及栅极，半导体层，源漏极，蚀刻阻挡层、绝缘层及像素电极等，在制造过程中，由于制程精度及偏差的问题(如曝光阶段)，第二金属层在形成源漏极时与蚀刻阻挡层必须有一定的重叠宽度，以保证在制程产生偏差时，第二金属层能完全覆盖住半导体层，使得半导体层构成的沟道长度较大，导电能力变差，造成像素开口率下降。
发明内容
本发明提供一种阵列基板的制造方法，避免半导体层构成的沟道长度较大，导电能力变差，保证阵列基板开口率。
本发明提供一种阵列基板的制造方法，所述阵列基板的制造方法包括：
提供一基板；
在所述基板上形成第一金属层，通过构图工艺使第一金属层形成包括栅极的图案；
在上述基板及第一金属层上形成栅极绝缘层，栅极绝缘层覆盖所述基板的表面及所述栅极；
在所述栅极绝缘层上形成正投影于所述栅极的氧化物半导体层；其中，所述氧化物半导体层的宽度与所述栅极宽度相同；
在所述氧化物半导体层上设置光阻层，所述光阻层的宽度小于所述氧化物半导体层的宽度，且所述氧化物半导体层上由所述光阻层投影正对的部分为沟道区域，而位于所述氧化物半导体层上沟道区域两侧为第一氧化物半导体层及第二氧化物半导体层；
对设置有光阻层的所述第一氧化物半导体层及第二氧化物半导体层进行等离子处理，使露出所述光阻层投影的第一氧化物半导体层及第二氧化物半导体层转换为第一氧化物导体层及第二氧化物导体层；
移除所述光阻层；
在形成栅极绝缘层、沟道区域、第一氧化物导体层及第二氧化物导体层的基板上形成蚀刻阻挡层；其中，第一氧化物导体层及第二氧化物导体层部分露出所述蚀刻阻挡层；
在所述基板上形成第二金属层，图案化所述第二金属层形成所述阵列基板的源极及漏极，其中，所述源极与第一氧化物导体层接触，所述漏极与第二氧化物导体层接触。
其中，所述等离子处理采用氮气或者氨气注入所述第一氧化物半导体层及第二氧化物半导体层。
其中，所述氧化物导体层的材料为氧化铟镓锌(IGZO)、氧化锌(ZnO)、氧化铟锌(InZnO)或氧化锌锡(ZnSnO)。
其中，所述蚀刻阻挡层的材料为氧化硅。
其中，所述第一金属层的材质选自铜、钨、铬、铝及其组合的其中之一，所述第二金属层的材质选自铜、钨、铬、铝及其组合的其中之一。
其中，所述的阵列基板的制造方法还包括在所述基板及所述图案化的第二金属层上形成的绝缘保护层，对所述绝缘保护层进行图案化的步骤。
其中，所述栅极绝缘层与所述绝缘保护层采用氧化硅(SiOx)、氮化硅(SiNx)与氮氧化硅(SiNxOy)中的一种制成。
其中，所述栅极绝缘层及蚀刻阻挡层通过构图工艺形成。
本发明提供一种阵列基板，所述阵列基板包括：
基板、形成于基板上的栅极；
栅绝缘层，覆盖所述栅极；
沟道区域，位于所述栅极正上方；
第一氧化物半导体层及第二氧化物半导体层，所述第一氧化物半导体层及第二氧化物半导体层分别连接所述沟道区域两侧，且与沟道区域同一平面设置的，所述沟道区域、第一氧化物半导体层及第二氧化物半导体层共同覆盖于所述栅极；
蚀刻阻挡层，设于所述基板上，覆盖所述栅极绝缘层及所述沟道区域；
设于蚀刻阻阻挡层上的源极与漏极，所述源极与所述漏位于所述沟道区域两侧位置，所述源极覆盖并接触第一氧化物半导体层，所述漏极覆盖并接触第二氧化物半导体层。
本发明提供一种显示装置，其包括所述的阵列基板。
本发明的阵列基板的制造方法在栅极绝缘层上形成氧化物半导体层，通过设置光阻层遮挡部分氧化物半导体层作为沟道区域，通过等离子处理方式将沟道区域两个的氧化物半导体层形成含氧量较少的第一氧化物导体层、第二氧化物导体层用于接触层与所述源极和漏极接触，保证在制程产生偏差时第二金属层能与所述源极和漏极接触同时减少了沟道区域的整体长度，进而减少阵列基板的尺寸提升了阵列基板的开口率及通电性能。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一较佳实施方式的阵列基板的制造方法的流程图。
图2至图9为本发明较佳实施方式的阵列基板方法的各个制造流程中阵列基板的截面示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，其为本发明一较佳实施方式的阵列基板的制造方法的流程图。所述阵列基板属于氧化物半导体结构晶体管。在阐述具体制备方法之前，应所述理解，在本发明中，所述图案化即是指构图工艺，可包括光罩工艺，或，包括光罩工艺以及刻蚀步骤，同时还可以包括打印、喷墨等其他用于形成预定图形的工艺；光罩工艺，是指包括成膜、曝光、显影，等工艺过程的利用光刻胶、掩模板、曝光机等形成图形的工艺。可根据本发明中所形成的结构选择相应的构图工艺。
所述阵列基板的制造方法制造方法包括如下步骤。
步骤S1，提供一基板10。请一并参阅图2，在本实施方式中，所述基板10为一玻璃基板。可以理解地，在其他实施方式中，所述基板10并不仅限于为玻璃基板。
请一并参阅图3，步骤S2，在所述基板10上形成第一金属层(图未示)，通过构图工艺使第一金属层形成包括栅极12的图案；具体的，在所述基板10的一表面上形成所述第一金属层，以作为所述阵列基板10的栅极12。所述第一金属层的材质选自铜、钨、铬、铝及其组合的其中之一。本实施方式中通过现有技术的涂光阻、曝光、显影等构图工艺对所述第一金属层图案化形成栅极12。
请一并参阅图4，步骤S3，在上述基板10及图案化的第一金属层上形成栅极绝缘层13，所述栅极绝缘层13覆盖所述基板10的表面及所述栅极12。具体的在所述基板10未覆盖所述第一金属层的表面及所述栅极12上形成所述栅极绝缘层13。所述栅极绝缘层13的材质选择氧化硅、氮化硅层，氮氧化硅层及其组合的其中之一。
请一并参阅图5，步骤S4，在所述栅极绝缘层13上形成正投影于所述栅极12的氧化物半导体层14；其中，所述氧化物半导体层14的宽度L1与所述栅极12宽度L2相同。所述氧化物半导体层14的材料为氧化铟镓锌(IGZO)、氧化锌(ZnO)、氧化铟锌(InZnO)或氧化锌锡(ZnSnO)。优选的，所述氧化物半导体层14采用含氧量0-10％的氧化铟镓锌(IGZO)。
请一并参阅图6，步骤S5，在所述氧化物半导体层14上设置光阻层15，所述光阻层15正投影于所述氧化物半导体层14上，且所述氧化物半导体层14上由所述光阻层投影正对的部分为沟道区域16，而位于所述氧化物半导体层14上沟道区域16两侧为第一氧化物半导体层141及第二氧化物半导体层142。
请一并参阅图7，步骤S6，对设置有光阻层15的所述第一氧化物半导体层141及第二氧化物半导体层142进行等离子处理，使露出所述光阻层15投影的第一氧化物半导体层141及第二氧化物半导体层142转换为第一氧化物导体层17及第二氧化物导体层18。所述等离子处理采用氮气或者氨气注入所述第一氧化物半导体层141及第二氧化物半导体层142，使所述第一氧化物半导体层141及第二氧化物半导体层142内的含氧量减少，降低阻值。
步骤S7，移除所述光阻层15。目的是露出所述沟道区域。
请一并参阅图8，步骤S8，在形成栅极绝缘层、沟道区域、第一氧化物导体层17及第二氧化物导体层18的基板上形成蚀刻阻挡层21。所述蚀刻阻挡层21的材料为氧化硅。所述蚀刻阻挡层21覆盖所述沟道区域16并露出大部分第一氧化物导体层17及第二氧化物导体层18。
请一并参阅图9，步骤S9，在基板10上形成第二金属层(图未示)，图案化所述第二金属层，形成所述阵列基板的源极19及漏极20，其中，所述源极19与第一氧化物导体层17接触，所述漏极20与第二氧化物导体层18接触。所述沟道区域16位于所述源极19与漏极20之间。
具体的，所述第二金属层与所述第一氧化物导体层17、第二氧化物导体层18及所述栅极绝缘层13依次层叠设置。通过现有技术的构图工艺对所述第二金属层进行图案化形成如图所示的源极19和漏极20。所述第二金属层的材质选自铜、钨、铬、铝及其组合的其中之一。其中，所述源极19与第一氧化物导体层17接触，所述漏极20与第二氧化物导体层18接触用于形成所述阵列基板的源极19和漏极20之间导通或者断开的通道，相当于欧姆接触层的作用，源极19和漏极20可分别通过位于其下的导体层与沟道区域16形成一良好的欧姆接触(ohmic contact)，具有低阻值，实现源极19到漏极20良好的通电性能。
本实施例中，第二金属层的材料一般是金属材料。但，本发明不限于此，在其他实施例中，第二金属层的材料也可以使用其他导电材料，如合金、金属材料的氮化物、金属材料的氧化物、金属材料的氮氧化物或是金属材料与其它导材料的堆叠层。
步骤S10，在所述基板10及所述图案化的第二金属层(源极19和漏极20)上形成的绝缘保护层，对所述绝缘保护层进行图案化。所述栅极绝缘层13与所述绝缘保护层采用氧化硅(SiOx)、氮化硅(SiNx)与氮氧化硅(SiNxOy)中的一种制成。到此步骤，本实施例中的阵列基板制造方法完成。
进一步的，所述栅极绝缘层13与所述绝缘保护层采用氧化硅(SiOx)、氮化硅(SiNx)与氮氧化硅(SiNxOy)中的一种制成。本实施例中，所述栅极绝缘层及蚀刻阻挡层通过构图工艺形成。
本发明的阵列基板的制造方法在栅极绝缘层13上形成氧化物半导体层14，通过设置光阻层15遮挡部分氧化物半导体层14作为沟道区域16，通过等离子处理方式将沟道区域16两侧的氧化物半导体层14形成含氧量较少的第一氧化物导体层17、第二氧化物导体层18用于接触层与所述源极19和漏极20接触，保证在制程产生偏差时第二金属层能与所述源极19和漏极20接触同时减少了沟道区域16的整体长度，进而减少阵列基板的尺寸提升了阵列基板的开口率及通电性能。
针对上述阵列基板制造方法，本发明还涉及一种阵列基板，所述阵列基板通过上述阵列基板的制造方法制备得到，其包括基板、栅极，栅绝缘层，覆盖所述栅极；沟道区域，位于所述栅极正上方；第一氧化物导体层及第二氧化物导体层，所述第一氧化物导体层及第二氧化物导体层分别连接所述沟道区域两侧，且与沟道区域同一平面设置的，所述沟道区域、第一氧化物导体层及第二氧化物导体层共同覆盖于所述栅极；蚀刻阻挡层，设于所述基板上，覆盖所述栅极绝缘层及所述沟道区域；设于蚀刻阻阻挡层上的源极与漏极，所述源极与所述漏位于所述沟道区域两侧位置，所述源极覆盖并接触第一氧化物导体层，所述漏极覆盖并接触第二氧化物导体层。
本发明还包括以上方式的阵列基板的显示装置，通过本发明实施例阵列基板的制造方法形成的显示装置，可以为：液晶面板、液晶电视、液晶显示器、OLED面板、OLED电视、电子纸、数码相框、手机等。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (9)

1.一种阵列基板的制造方法，其特征在于，所述阵列基板的制造方法包括：
提供一基板；
在所述基板上形成第一金属层，通过构图工艺使第一金属层形成包括栅极的图案；
在上述基板及第一金属层上形成栅极绝缘层，栅极绝缘层覆盖所述基板的表面及所述栅极；
在所述栅极绝缘层上形成正投影于所述栅极的氧化物半导体层；其中，所述氧化物半导体层的宽度与所述栅极宽度相同；
在所述氧化物半导体层上设置光阻层，所述光阻层的宽度小于所述氧化物半导体层的宽度，且所述氧化物半导体层上由所述光阻层投影正对的部分为沟道区域，而位于所述氧化物半导体层上沟道区域两侧为第一氧化物半导体层及第二氧化物半导体层；
对设置有光阻层的所述第一氧化物半导体层及第二氧化物半导体层采用氮气或氨气注入的方式进行等离子处理，使露出所述光阻层投影的第一氧化物半导体层及第二氧化物半导体层转换为第一氧化物导体层及第二氧化物导体层；
移除所述光阻层；
在形成栅极绝缘层、沟道区域、第一氧化物导体层及第二氧化物导体层的基板上形成蚀刻阻挡层；其中，所述蚀刻阻挡层覆盖所述沟道区域并部分露出所述第一氧化物导体层及所述第二氧化物导体层；
在所述基板上形成第二金属层，图案化所述第二金属层形成所述阵列基板的源极及漏极，其中，所述源极与第一氧化物导体层接触，所述漏极与第二氧化物导体层接触。
2.如权利要求1所述的阵列基板的制造方法，其特征在于，所述氧化物半导体层的材料为氧化铟镓锌(IGZO)、氧化锌(ZnO)、氧化铟锌(InZnO)或氧化锌锡(ZnSnO)。
3.如权利要求1所述的阵列基板的制造方法，其特征在于，所述蚀刻阻挡层的材料为氧化硅。
4.如权利要求1所述的阵列基板的制造方法，其特征在于，所述第一金属层的材质选自铜、钨、铬、铝及其组合的其中之一，所述第二金属层的材质选自铜、钨、铬、铝及其组合的其中之一。
5.如权利要求1所述的阵列基板的制造方法，其特征在于，所述的阵列基板的制造方法还包括在所述基板及所述图案化的第二金属层上形成的绝缘保护层，对所述绝缘保护层进行图案化的步骤。
6.如权利要求5所述的阵列基板的制造方法，其特征在于，所述栅极绝缘层与所述绝缘保护层采用氧化硅(SiOx)、氮化硅(SiNx)与氮氧化硅(SiNxOy)中的一种制成。
7.如权利要求1所述的阵列基板的制造方法，其特征在于，所述栅极绝缘层及蚀刻阻挡层通过构图工艺形成。
8.一种由权利要求1所述的阵列基板的制造方法所制备得到的阵列基板，其特征在于，所述阵列基板包括：
基板、形成于基板上的栅极；
栅极绝缘层，覆盖所述栅极；
沟道区域，位于所述栅极正上方；
第一氧化物导体层及第二氧化物导体层，所述第一氧化物导体层及第二氧化物导体层分别连接所述沟道区域两侧，且与沟道区域同一平面设置的，所述沟道区域、第一氧化物导体层及第二氧化物导体层共同覆盖于所述栅极；
蚀刻阻挡层，设于所述基板上，覆盖所述栅极绝缘层及所述沟道区域；
设于蚀刻阻挡层上的源极与漏极，所述源极与所述漏极位于所述沟道区域两侧位置，所述源极覆盖并接触第一氧化物导体层，所述漏极覆盖并接触第二氧化物导体层。
9.一种显示装置，其包括权利要求8所述的阵列基板。
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