CN104658596A - Anti-noise delay counter - Google Patents
Anti-noise delay counter Download PDFInfo
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- CN104658596A CN104658596A CN201510052160.5A CN201510052160A CN104658596A CN 104658596 A CN104658596 A CN 104658596A CN 201510052160 A CN201510052160 A CN 201510052160A CN 104658596 A CN104658596 A CN 104658596A
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Abstract
The invention relates to an anti-noise delay counter. The anti-noise delay counter comprises a deltafb feedback delay circuit, a sampling circuit, a digital filter, an input counter, an output counter and FIFO (First In First Out). The anti-noise delay counter solves the technical problems that the position of an output pointer and an input pointer goes wrong in the existing memory delay counter and read instruction data is output in a wrong period. According to the anti-noise delay counter, the digital filter is additionally arranged, the position of the hold signal is not changed, the hold signal occurs periodically, and the phase relation of the output pointer to the input pointer cannot go wrong along with the changes of voltage/temperature and process; and the implementation model is simple.
Description
Technical field
The present invention relates to semiconductor DRAM memory design field, be specifically related to a kind of antimierophonic delay counter.
Background technology
Computing machine and various electronic equipment are widely used in the various aspects of the modern life, increasing to memory article (DRAM storer) demand.People are more and more faster to rate request, and the clock of storer is just more and more less.So the impact of noise on properties of product is increasing.
The delay counter of storer is used to realize the instruction of reading of storer.Whenever one is read instruction, the rising edge clock after user is desirably in a fixed delay period (user can configure) obtains the data expected, be illustrated in figure 1 DRAM memory read instructions operation chart, in figure, delay period is 6.In order to realize above-mentioned read operation, DRAM storer generally divides 3 steps to complete:
Step A: storer accepts outside and reads instruction, produce internal clocking clk_rcv, the delay of internal clocking clk_rcv and external clock clk is δ 0;
Step B: utilize internal clocking to count
Step C: terminate to export data at counter, the effective time is δ 1 from internal clocking to data
As shown in Figure 2, two apparent problems are had:
1, export data to align with external clock clk;
2, along with the clock period is more and more less, internal latency (δ 0+ δ 1) is likely greater than a clock period, as Fig. 2 data likely occur 5/6/7... clock period.
In order to solve the problem, digital delay phase-locked loop DLL introduced by DRAM storer, produce a delayed clock clk_dll of internal clocking clk_rcv, the phase differential of delayed clock clk_dll and external clock clk is δ 1, as shown in Figure 3, if the delay δ dll of the delayed clock clk_dll that digital delay phase-locked loop DLL produces and internal clocking clk_rcv, meet δ dll=N*Tck-(δ 0+ δ 1), the data exported by delayed clock clk_dll like this and external clock complete matching.
As shown in Figure 4, Figure 5, DRAM delay counter utilizes δ fb delay circuit to produce a hold signal and is used for guarantee output pointer (output pointer) to the sequential relationship inputting pointer (input pointer).If δ fb=δ 0+ δ 1, so clk_fb and clk_rcv phase place is with regard to complete matching.After user sets DRAM delay period, hold signal will periodically occur ensureing that the change output pointer along with voltage/temperature/technique can not mistake to the phase relation of input pointer.In the ideal case (voltage/temperature/technique is constant), the position that hold signal occurs can not change, and the position of same input pointer and output pointer also can not change as shown in Figure 6.
But when system generation noise time, the impact that hold signal produced by the foundation/retention time can make a mistake.Thus cause output pointer to make a mistake to the position of input pointer, finally cause the data reading instruction to export as shown in Figure 7 in the cycle of mistake.
Summary of the invention
In order to solve existing memory latency counter exist output pointer to input pointer position make a mistake, the technical matters that the data reading instruction exported in the cycle of mistake, the invention provides a kind of antimierophonic delay counter.
Technical solution of the present invention:
A kind of antimierophonic delay counter, its special character is: comprise
δ fb feedback delay circuit: produce hold signal for carrying out process to delayed clock clk_dll:
Sample circuit: for sampling to hold signal, exports the input pointer of current hold set and upper N hold set input pointer value;
Digital filter: receive the input pointer of the current hold set that sample circuit exports and upper N hold set input pointer value, and compare output permission hold set input pointer:
Enter counter: for counting permission hold set input pointer, export input pointer;
Output counter: export output pointer for carrying out counting to delayed clock clk_dll, export input pointer;
FIFO: export and read instruction for receiving input pointer, output pointer and read pointer after delay counter.
Above-mentioned δ fb feedback delay circuit hold signal is used for ensureing the sequential relationship of output pointer to input pointer.
N in above-mentioned upper N hold set input pointer value meets: N > 0.
The advantage that the present invention has:
The present invention, by increasing digital filter, ensures that the position that hold signal occurs can not change, thus ensure the appearance of hold signal period property along with the change output pointer of voltage/temperature/technique can not mistake to the phase relation inputting pointer.Implementation is simple.
Accompanying drawing explanation
Fig. 1 is DRAM memory read instructions operation chart;
Fig. 2 is for reading Command Resolution figure mono-schematic diagram;
Fig. 3 is for reading Command Resolution figure bis-schematic diagram;
Fig. 4 is DLL basic principle schematic;
Fig. 5 is the basic schematic diagram of delay counter;
Fig. 6 is correct hold signal schematic representation;
Fig. 7 is the hold signal schematic representation of mistake;
Fig. 8 is the structural representation of delay counter of the present invention.
Embodiment
Digital delay phase-locked loop DLL introduced by DRAM storer, produce a delayed clock clk_dll of internal clocking clk_rcv, the phase differential of delayed clock clk_dll and external clock clk is δ 1, if the delay δ dll of the delayed clock clk_dll that digital delay phase-locked loop DLL produces and internal clocking clk_rcv, meet δ dll=N*Tck-(δ 0+ δ 1), the data exported by delayed clock clk_dll like this and external clock complete matching.
DRAM delay counter utilizes δ fb feedback delay circuit to produce a hold signal and is used for ensureing the sequential relationship of output pointer to input pointer.If δ fb=δ 0+ δ 1, so clk_fb and clk_rcv phase place is with regard to complete matching.After user sets DRAM delay period, hold signal will periodically occur ensureing that the change output pointer along with voltage/temperature/technique can not mistake to the phase relation of input pointer.In the ideal case (voltage/temperature/technique is constant), the position that hold signal occurs can not change; But when system generation noise time, the impact that hold signal produced by the foundation/retention time can make a mistake.Digital filter is added when hold home position signal input pointer.
As shown in Figure 8, a kind of antimierophonic delay counter, comprising δ fb feedback delay circuit: produce hold signal for carrying out process to delayed clock clk_dll: sample circuit: for sampling to hold signal, exporting the input pointer of current hold set and upper N hold set input pointer value (N > 0); Digital filter: receive the input pointer of the current hold set that sample circuit exports and upper N hold set input pointer value, and compare output permission hold set input pointer: enter counter: for counting permission hold set input pointer, output inputs pointer; Output counter: export output pointer for carrying out counting to delayed clock clk_dll, export input pointer; FIFO: export and read instruction for receiving input pointer, output pointer and read pointer after delay counter.
Claims (3)
1. an antimierophonic delay counter, is characterized in that: comprise
δ fb feedback delay circuit: produce hold signal for carrying out process to delayed clock clk_dll:
Sample circuit: for sampling to hold signal, exports the input pointer of current hold set and upper N hold set input pointer value;
Digital filter: receive the input pointer of the current hold set that sample circuit exports and upper N hold set input pointer value, and compare output permission hold set input pointer:
Enter counter: for counting permission hold set input pointer, export input pointer;
Output counter: export output pointer for carrying out counting to delayed clock clk_dll, export input pointer;
FIFO: export and read instruction for receiving input pointer, output pointer and read pointer after delay counter.
2. antimierophonic delay counter according to claim 1, is characterized in that: described δ fb feedback delay circuit hold signal is used for ensureing the sequential relationship of output pointer to input pointer.
3. antimierophonic delay counter according to claim 1 and 2, is characterized in that: the N in described upper N hold set input pointer value meets: N > 0.
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060145894A1 (en) * | 2004-12-30 | 2006-07-06 | Si-Hong Kim | Apparatus and method for latency control in high frequency synchronous semiconductor device |
CN101364426A (en) * | 2007-08-08 | 2009-02-11 | 联发科技股份有限公司 | Memory control methods and circuit thereof |
CN101465632A (en) * | 2007-12-21 | 2009-06-24 | 瑞昱半导体股份有限公司 | Sampling circuit and sampling method |
CN204480671U (en) * | 2015-01-30 | 2015-07-15 | 西安华芯半导体有限公司 | A kind of antimierophonic delay counter |
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2015
- 2015-01-30 CN CN201510052160.5A patent/CN104658596B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060145894A1 (en) * | 2004-12-30 | 2006-07-06 | Si-Hong Kim | Apparatus and method for latency control in high frequency synchronous semiconductor device |
CN101364426A (en) * | 2007-08-08 | 2009-02-11 | 联发科技股份有限公司 | Memory control methods and circuit thereof |
CN101465632A (en) * | 2007-12-21 | 2009-06-24 | 瑞昱半导体股份有限公司 | Sampling circuit and sampling method |
CN204480671U (en) * | 2015-01-30 | 2015-07-15 | 西安华芯半导体有限公司 | A kind of antimierophonic delay counter |
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Address after: 710055 Shaanxi City, Xi'an province high tech Road No. 38, innovation center, A, block, floor 4 Applicant after: XI'AN UNIIC SEMICONDUCTORS Co.,Ltd. Address before: 710055 Shaanxi City, Xi'an province high tech Road No. 38, innovation center, A, block, floor 4 Applicant before: Xi'an Sinochip Semiconductors Co., Ltd. |
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