CN104253117B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN104253117B
CN104253117B CN201410219075.9A CN201410219075A CN104253117B CN 104253117 B CN104253117 B CN 104253117B CN 201410219075 A CN201410219075 A CN 201410219075A CN 104253117 B CN104253117 B CN 104253117B
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mentioned
npn
metal basal
basal board
semiconductor device
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CN104253117A (zh
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池田健太郎
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Toshiba Corp
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Toshiba Corp
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Abstract

一种半导体装置，具备：第1金属基板；与第1金属基板分离的第2金属基板；在第1金属基板上设置的硅半导体的常关断型晶体管；以及在第2金属基板上设置的氮化物半导体的常开启型晶体管。

Description

半导体装置
相关申请的交叉引用
本申请主张2013年6月25日提出的在先日本专利申请第2013-133108号的优先权，通过引用包含其全部内容。
技术领域
本发明的实施方式涉及半导体装置。
背景技术
作为新一代的功率半导体器件用的材料，可以期待III族氮化物，例如GaN(氮化镓)类氮化物半导体。GaN类半导体器件与Si(硅)相比具备更宽的禁带宽度，与Si半导体器件相比，能够实现高耐压、低损耗。
GaN类晶体管中，通常采用以二维电子气(2DEG)为载流子的HEMT(High ElectronMobility Transistor，高电子迁移率晶体管)结构。在通常的HEMT中，成为即使不对栅极施加电压也导通的常开启型(normally-on)的晶体管。因此，存在难以实现只要不向栅极施加电压就不导通的常关断型(normally-off)的晶体管这样的问题。
在处理几百V～一千V这样的大电力的电源电路等中，重视安全方面而要求常关断型的动作。因此，提倡将氮化物半导体的常开启型晶体管和硅半导体的常关断型晶体管在同一基板上级联(cascode)连接、实现常关断型动作的电路结构。
但是，在这样的电路结构中，耗电大的常开启型晶体管的发热有可能对其他元件的动作带来影响，特性有可能变动。
发明内容
本发明要解决的课题在于，提供一种能够抑制因元件的发热导致的特性变动的半导体装置。
实施方式的半导体装置，具备：第1金属基板；与第1金属基板分离的第2金属基板；在第1金属基板上设置的硅半导体的常关断型晶体管；以及在第2金属基板上设置的氮化物半导体的常开启型晶体管。
根据上述结构，提供一种能够抑制因元件的发热导致的特性变动的半导体装置。
附图说明
图1是第1实施方式的半导体装置的示意剖面图。
图2是在第1实施方式的半导体装置中将模具(mold)树脂去除后的示意俯视图。
图3是第1实施方式的半导体装置的电路图。
图4是在第2实施方式的半导体装置中将模具树脂去除后的示意俯视图。
图5是在第3实施方式的半导体装置中将模具树脂去除后的示意俯视图。
图6是第3实施方式的半导体装置的电路图。
图7是在第4实施方式的半导体装置中将模具树脂去除后的示意俯视图。
图8是第4实施方式的半导体装置的电路图。
具体实施方式
以下，参照附图对本发明的实施方式进行说明。另外，在以下的说明中，对同一部件等附加同一符号，对一度说明过的部件等适当将其说明省略。
此外，本说明书中，所谓半导体装置，是指包含如下的概念：将分离半导体等多个元件组合而成的功率模块，或者在分离半导体等多个元件中植入对这些元件进行驱动的驱动电路及自我保护功能而得到的智能功率模块，或者具备功率模块及智能功率模块的***整体。
此外，本说明书中，所谓常开启型晶体管，是指当源极与栅极为相同电位时沟道为导通状态、在源极与漏极间流过电流的晶体管。此外，在本实施方式中，所谓常关断型晶体管，是指当源极与栅极为相同电位时沟道为断开状态、在源极与漏极间不流过电流的晶体管。
此外，本说明书中，所谓氮化物半导体，是在III－V族半导体中使用氮作为V族元素的半导体。例如，GaN(氮化镓)、AlN(氮化铝)、InN(氮化铟)或者具备它们的中间组分的半导体。此外，所谓GaN类半导体，是氮化物半导体之中作为III族元素而包含Ga(镓)的III－V族半导体的总称。
(第1实施方式)
本实施方式的半导体装置，具备：第1金属基板；与第1金属基板分离的第2金属基板；在第1金属基板上设置的硅半导体的常关断型晶体管；以及在第2金属基板上设置的氮化物半导体的常开启型晶体管。
图1是本实施方式的半导体装置的示意剖面图。图2是在本实施方式的半导体装置中将模具树脂除去后的示意俯视图。图1是图2的AA剖面图。图3是本实施方式的半导体装置的电路图。
本实施方式的半导体装置具备硅半导体的常关断型晶体管10、和氮化物半导体的常开启型晶体管20。本实施方式的半导体装置例如是额定电压为600V或1200V的功率模块。
如图3所示，本实施方式的半导体装置将常关断型晶体管10和常开启型晶体管20串联连接而构成功率模块。常关断型晶体管10例如是由Si(硅)形成的纵型MOSFET(MetalOxide Semiconductor Field Effect Transistor，金属氧化物半导体场效应晶体管)。此外，常开启型晶体管20例如是由横型的GaN(氮化镓)类半导体形成的HEMT。常开启型晶体管20具备栅极绝缘膜。
常关断型晶体管10与常开启型晶体管20相比元件耐压更低。常关断型晶体管10的元件耐压例如是10～30V。此外，常开启型晶体管20的元件耐压例如是600～1200V。
半导体装置具备源极端子100、漏极端子200和栅极端子300。并且，常关断型晶体管10具有与源极端子100连接的第1源极11、第1漏极12、与栅极端子300连接的第1栅极13。此外，常开启型晶体管20具有与第1漏极12连接的第2源极21、与漏极端子200连接的第2漏极22、与源极端子100连接的第2栅极23。
本实施方式的半导体装置通过上述结构而作为具备源极端子100、漏极端子200和栅极端子300的常关断型晶体管发挥功能。
如图1、图2所示，本实施方式的半导体装置具备第1金属基板95、和与第1金属基板95在物理上分离的第2金属基板96。第1金属基板95与第2金属基板96之间，夹着与第1金属基板95和第2金属基板96相比热传导率低的物质，从而第1金属基板95与第2金属基板96在物理上分离。第1及第2金属基板95、96例如是铜合金。
并且，在第1金属基板95上设置常关断型晶体管10，在第2金属基板96上设置常开启型晶体管20。常关断型晶体管10例如通过银膏等导电性粘接材料而粘接在第1金属基板95上。此外，常开启型晶体管20例如通过银膏等导电性粘接材料而粘接在第2金属基板96上。
在常关断型晶体管10的上表面，设置第1源极11的电极焊盘111和第1栅极13的电极焊盘113。常关断型晶体管10的下表面成为第1漏极12的电极。
此外，在常开启型晶体管20的上表面，设置第2源极21的电极焊盘121、第2漏极22的电极焊盘122、第2栅极23的电极焊盘123。
并且，还具备源极的引线91、漏极的引线92、栅极的引线93。源极的引线91、漏极的引线92以及栅极的引线93例如是铜合金。
并且，源极的引线91与第1源极11的电极焊盘111电连接，漏极的引线92与第2漏极22的电极焊盘122电连接。栅极的引线93与第1栅极13的电极焊盘113电连接。
并且，第1源极11的电极焊盘111与第2栅极23的电极焊盘123电连接。此外，第1金属基板95与第2金属基板96电连接。进而，第2金属基板96与第2源极21的电极焊盘121连接。
上述连接例如通过使用了键合引线99的引线键合进行。键合引线99例如采用金(Au)、铜(Cu)、铝(Al)等材料。
进而，常关断型晶体管10的下表面的第1漏极12的电极例如通过银膏等导电性粘接材料而与第1金属基板95电连接。
常关断型晶体管10和常开启型晶体管20被模具树脂98密封而被一体化。模具树脂98与第1金属基板95和第2金属基板96相比热传导率低。模具树脂98例如是环氧树脂。
另外，实施方式中，以常关断型晶体管10和常开启型晶体管20被模具树脂98密封的情况为例进行了说明，但常关断型晶体管10和常开启型晶体管20也可以不必须用模具树脂98密封。例如也可以是如下结构：在同一陶瓷基板上，设置第1金属基板95和第2金属基板96，常关断型晶体管10与常开启型晶体管20之间成为空气。
本实施方式的功率模块在动作时，耗电大的氮化物半导体的常开启型晶体管20中，与常关断型晶体管10相比发热量明显变高。此外，硅半导体的常关断型晶体管10的耐热性相对于氮化物半导体的常开启型晶体管20而言较低。即，常关断型晶体管10中，温度上升引起的漏电流的增大、阈值的变动比常开启型晶体管20大。此外，到达元件破坏的温度也比常开启型晶体管20低。
本实施方式中，安装常关断型晶体管10的第1金属基板95、和安装常开启型晶体管20的第2金属基板96经由热传导率低的物质而在物理上分离。根据该结构，使常关断型晶体管10与常开启型晶体管20热分离，抑制由常开启型晶体管20的发热带来的热影响波及到常关断型晶体管10。因而，实现特性变动小、可靠性高的半导体装置。
本实施方式中，优选的是，第2金属基板96的热传导率比第1金属基板95的热传导率小。根据该结构，抑制常开启型晶体管20的热在第2金属基板96内的传导。因而，能够进一步抑制由常开启型晶体管20的发热带来的热影响波及到常关断型晶体管10。
此外，本实施方式中，第1金属基板95与第1漏极12电连接，第2金属基板96与第2源极21电连接。即，第2金属基板96与第2源极21的电位实现共通化。并且，第2金属基板96在常开启型晶体管20的下表面侧从第2源极21到第2漏极22不间断地存在。
因此，第2金属基板96作为常开启型晶体管20的源极场板发挥功能。源极场板对第2源极21与第2漏极22间的源极区域以及漏极区域的电场进行缓和，抑制电流崩塌。
如以上那样，根据本实施方式的半导体装置，通过将常关断型晶体管10与常开启型晶体管20热分离，实现特性变动小、可靠性高的半导体装置。此外，根据本实施方式的半导体装置，通过使第2金属基板96作为源极场板发挥功能，抑制电流崩塌，实现可靠性高的半导体装置。
(第2实施方式)
本实施方式的半导体装置与第1实施方式的不同点在于，第2金属基板与第2漏极电连接。对于与第1实施方式重复的内容将说明省略。
图4是在本实施方式的半导体装置中将模具树脂去除后的示意俯视图。本实施方式的电路结构与图3所示的第1实施方式的电路结构相同。
本实施方式中，源极的引线91与第1源极11的电极焊盘111电连接，漏极的引线92与第2金属基板96电连接。栅极的引线93与第1栅极13的电极焊盘113电连接。
并且，第1源极11的电极焊盘111与第2栅极23的电极焊盘123电连接。此外，第1金属基板95与第2源极21的电极焊盘121电连接。进而，第2漏极22的电极焊盘122与第2金属基板96电连接。
并且，常关断型晶体管10的下表面的第1漏极12的电极例如通过银膏等导电性粘接材料而与第1金属基板95电连接。
本实施方式中，与第1实施方式同样，将常关断型晶体管10与常开启型晶体管20热分离，抑制由常开启型晶体管20的发热带来的热影响波及到常关断型晶体管10。因而，实现特性变动小、可靠性高的半导体装置。
此外，本实施方式中，与第1实施方式不同，第2金属基板96不与第1漏极12直接电连接，也不与第2源极21直接电连接。换言之，第2金属基板96不与常关断型晶体管10和常开启型晶体管20的连接部(以下也简称连接部)直接电连接。
第2金属基板96有可能在半导体装置的动作中作为在半导体装置上寄生的天线而起作用。即，有可能引入半导体装置外的噪音而使半导体装置的动作不稳定。此外，相反，有可能从半导体装置向半导体装置外引发噪声，对半导体装置外的元件动作带来不良影响。因此，特别是，当第2金属基板96与电位不固定的连接部等连接时，元件动作不稳定的可能性变高。
本实施方式中，第2金属基板96通过被与漏极的引线92连接，从而被固定于漏极电压。因此，抑制第2金属基板96作为天线起作用、影响波及到半导体装置自身的动作或半导体装置外的元件的动作。
通常，安装有发热量大的常开启型晶体管20的第2金属基板96与第1金属基板95相比，与面积更大的散热板等连接。因此，作为寄生天线而起作用的导体的表面积容易变大。因而，将表面积大的第2金属基板96的电位固定于漏极电压，对噪声抑制是有效的。
另外，如本实施方式那样使第1金属基板95和第2金属基板96为不同电位，能够通过将第1金属基板95和第2金属基板96在物理上分离而得以实现。
如以上那样，根据本实施方式的半导体装置，通过将常关断型晶体管10和常开启型晶体管20热分离，实现特性变动小、可靠性高的半导体装置。此外，通过使第2金属基板96固定于漏极电压，实现动作稳定且难以对周围元件带来不良影响的半导体装置。
(第3实施方式)
本实施方式的半导体装置与第1实施方式的不同点在于，还具备在第1金属基板上设置的二极管。对于与第1实施方式重复的内容将说明省略。
本实施方式的二极管是齐纳二极管。
图5是在本实施方式的半导体装置中将模具树脂去除后的示意俯视图。图6是本实施方式的半导体装置的电路图。本实施方式的半导体装置中，对常关断型晶体管10并联设置例如硅半导体的齐纳二极管30。
如图6所示，齐纳二极管30具有第1阳极31和第1阴极32。第1阳极31与第1源极11连接。此外，第1阴极32与第1漏极12以及第2源极21连接。
这里，设定为齐纳二极管30的齐纳电压比常关断型晶体管10的雪崩击穿电压低。此外，齐纳电压设定为比常开启型晶体管20的栅极绝缘膜的耐压低。由此，常关断型晶体管10断开时的第1源极11与第1漏极12间的耐压比常开启型晶体管20的第2源极21与第2栅极23间的耐压低。
如图5所示，在齐纳二极管30的上表面，设置第1阳极31的电极焊盘131。并且，第1源极11的电极焊盘111与第1阳极31的电极焊盘131例如通过键合引线99电连接。
此外，齐纳二极管30的下表面成为第1阴极32的电极。并且，与第1金属基板95例如通过银膏等导电性粘接材料电连接。
并且，齐纳二极管30与常开启型晶体管20的距离比常关断型晶体管10与常开启型晶体管20的距离长。这里，两个元件间的距离是指两个元件之间的最短距离。
在将常关断型晶体管10与常开启型晶体管20串联连接的电路结构中，在常关断型晶体管10与常开启型晶体管20的连接部，有可能在器件动作中产生过电压。过电压例如通过在半导体装置从导通状态向断开状态转移时、源极端子100与漏极端子200之间所施加的高电压按常关断型晶体管10与常开启型晶体管20的寄生电容之比被分压而产生。或者，通过在半导体装置断开时、源极端子100与漏极端子200之间所施加的高电压按常关断型晶体管10与常开启型晶体管20各自的漏电流比被分压而产生。
若产生过电压，则常开启型晶体管20的第2源极21、与第2栅极23之间被施加高电压。该过电压达到栅极绝缘膜的耐压以上时，有可能导致常开启型晶体管20的栅极绝缘膜的漏电流的增大、或者被破坏。若常开启型晶体管20的栅极绝缘膜的漏电流增大、或者栅极绝缘膜被破坏，则半导体装置的动作出现问题。因此，半导体装置的可靠性降低。
此外，即使在栅极绝缘膜没有发生问题的情况下，通过在常开启型晶体管20的第2源极21与第2栅极23之间施加高电压，也会在第2源极21侧将电荷捕获。由此，有可能发生电流崩塌。当发生电流崩塌时导通电流降低从而动作出现问题。因而，半导体装置的可靠性也会降低。
本实施方式的半导体装置中，在常关断型晶体管10与常开启型晶体管20的连接部产生过电压的情况下，在过电压达到齐纳电压的时刻，电荷由于齐纳二极管30而释放，被吸引到源极端子100。因而，连接部的电压上升得以抑制，防止常开启型晶体管20的栅极绝缘膜的漏电流的增大、栅极绝缘膜的破坏。此外，还防止电流崩塌。由此，半导体装置的可靠性提高。
此外，即使在对常关断型晶体管10的第1漏极12施加了噪声等预期外的高电压的情况下，电荷也能够通过齐纳二极管30而释放。因此，有利于保护常关断型晶体管10。
通常，齐纳二极管30的耐热性比氮化物半导体的常开启型晶体管20低。即，齐纳二极管30的由温度上升而导致的漏电流增大、齐纳电压变化等特性变动大。此外，导致元件破坏的温度也比常开启型晶体管20低。
本实施方式中，将安装齐纳二极管30的第1金属基板95、和安装常开启型晶体管20的第2金属基板96经由热传导率低的物质而在物理上分离。通过该结构，将齐纳二极管30和常开启型晶体管20热分离，抑制因常开启型晶体管20的发热引起的热影响波及到齐纳二极管30。因而，实现特性变动小、可靠性高的半导体装置。
此外，通常，齐纳二极管30的耐热性比硅半导体的常关断型晶体管10低。即，齐纳二极管30的因温度上升导致的漏电流的增大、齐纳电压的变化等特性变动与常关断型晶体管10相比更大。此外，到达元件破坏的温度也比常关断型晶体管10低。
本实施方式中，齐纳二极管30与常开启型晶体管20的距离比常关断型晶体管10与常开启型晶体管20的距离长。通过该结构，将齐纳二极管30的温度上升抑制得比常关断型晶体管10的温度上升低。因而，进一步抑制因常开启型晶体管20的发热带来的热影响波及到齐纳二极管30。因而，实现特性变动小、可靠性更高的半导体装置。
如以上那样，根据本实施方式的半导体装置，除了第1实施方式的效果以外，还能得到将在连接部发生了过电压时的耐性提高的效果。此外，还能得到抑制电流崩塌的效果。并且，由于齐纳二极管30与常开启型晶体管20热分离从而还抑制因发热引起的特性变动。由此，实现特性变动小、可靠性更高的半导体装置。
(第4实施方式)
本实施方式的半导体装置与第3实施方式的不同点在于，在第1金属基板上还具备肖特基势垒二极管。对于与第1及第3实施方式重复的内容将说明省略。
图7是在本实施方式的半导体装置中将模具树脂去除后的示意俯视图。图8是本实施方式的半导体装置的电路图。
本实施方式的半导体装置中，与常关断型晶体管10并联地设置齐纳二极管30、和肖特基势垒二极管60。
如图8所示，齐纳二极管30具有第1阳极31和第1阴极32。第1阳极31与第1源极连接。此外，第1阴极32与第1漏极12以及第2源极21连接。
此外，肖特基势垒二极管60具备第2阳极61和第2阴极62。并且，第2阳极61与第1源极11连接。此外，第2阴极62与第1漏极12以及第2源极21连接。
肖特基势垒二极管60的正向压降(Vf)比常关断型晶体管的寄生体二极管(未图示)的正向压降(Vf)低。并且，肖特基势垒二极管60在第1漏极12以及第2源极21、与第1源极11之间并联于齐纳二极管30而设置。
如图7所示，在肖特基势垒二极管60的上表面，设置第2阳极61的电极焊盘161。并且，源极的引线91与第2阳极61的电极焊盘161例如通过键合引线99电连接。
此外，肖特基势垒二极管60的下表面成为第2阴极62的电极。并且，例如通过银膏等导电性粘接材料而与第1金属基板95电连接。
并且，齐纳二极管30以及肖特基势垒二极管60与常开启型晶体管20的距离比常关断型晶体管10与常开启型晶体管20的距离长。
在没有设置肖特基势垒二极管60的情况下，在源极端子100相对于漏极端子200成为正电压的回流模式时，电流流过常关断型晶体管10的寄生体二极管。本实施方式中，设置具有比常关断型晶体管10的寄生体二极管的正向压降(Vf)低的正向压降(Vf)的肖特基势垒二极管60。由此，在回流模式时电流流过肖特基势垒二极管60。
肖特基势垒二极管不同于PIN二极管，仅利用多数载流子进行动作。因而，与PIN二极管相比恢复(recovery)特性良好。因而，能够使回流模式时的恢复特性提高。由此，能够实现可靠性以及恢复特性良好的半导体装置。由于耐压的大部分由常开启型晶体管20承担，所以肖特基势垒二极管60能够选择低耐压的品种。由此，能够在具备与低耐压品种相同的Vf特性、恢复特性的同时实现高耐压的体二极管动作。
此外，由于正向压降(Vf)小，所以还能降低回流模式时的导通损耗、开关损耗。此外，利用肖特基势垒二极管60的寄生电容，连接部的过电压的施加得以抑制。此外，利用肖特基势垒二极管60的漏电流，电荷能够从连接部释放，所以连接部的过电压的施加得以抑制。因而，实现可靠性进一步提高的半导体装置。
另外，肖特基势垒二极管60由于不具备雪崩击穿保证，所以肖特基势垒二极管60的耐压优选比常关断型晶体管10的雪崩击穿电压高。
通常，肖特基势垒二极管60的耐热性比氮化物半导体的常开启型晶体管20低。即，肖特基势垒二极管60的因温度上升引起的漏电流的增大、齐纳电压的变化等特性变动大。此外，到达元件破坏的温度也比常开启型晶体管20低。
本实施方式中，将安装肖特基势垒二极管60的第1金属基板95、与安装常开启型晶体管20的第2金属基板96经由热传导率低的物质在物理上分离。通过该构成，将肖特基势垒二极管60与常开启型晶体管20热分离，抑制因常开启型晶体管20的发热引起的热影响波及到齐纳二极管30。
此外，通常，肖特基势垒二极管60的耐热性比齐纳二极管30低。即，肖特基势垒二极管60与齐纳二极管30相比，由温度上升导致的漏电流的增大等特性变动大。
本实施方式中，肖特基势垒二极管60和成为主要发热源的常开启型晶体管20的距离比齐纳二极管30和常开启型晶体管20的距离长。因而，能够降低温度上升对肖特基势垒二极管60的影响。因而，实现特性变动小、可靠性高的半导体装置。
如以上那样，根据本实施方式的半导体装置，除了第1及第3实施方式的效果以外，还能得到提高在连接部产生过电压时的耐性的效果。此外，还能得到抑制电流崩塌的效果。进而，还能提高回流模式时的恢复特性。此外，由于齐纳二极管30和肖特基势垒二极管60与常开启型晶体管20热分离，所以因发热引起的特性变动也得到抑制。由此，实现特性变动小、可靠性更高的半导体装置。
另外，实施方式中，以将硅半导体的常关断型晶体管和氮化物半导体的常开启型晶体管串联连接的电路结构为例，进行了说明，但硅半导体的常关断型晶体管和氮化物半导体的常开启型晶体管只要安装在不同金属基板上，则可以不必须限定为实施方式的电路结构。
说明了几个实施方式，但这些实施方式只是例示而并不意欲限定本发明的范围。这里所例示的半导体装置能够以其他方式实施，进而，在不脱离本发明精神的范围内，能够对这些实施方式进行省略、替换、变更。这些实施方式及其变形包含在权利要求的范围及其等同范围内。

Claims (10)

1.一种半导体装置，其特征在于，
具备：
第1金属基板；
第2金属基板，与上述第1金属基板分离；
硅半导体的常关断型晶体管，设置在上述第1金属基板上；以及
氮化物半导体的常开启型晶体管，设置在上述第2金属基板上，
上述常关断型晶体管具有与源极端子连接的第1源极、第1漏极、与栅极端子连接的第1栅极，
上述常开启型晶体管具有与上述第1漏极连接的第2源极、与漏极端子连接的第2漏极、与上述源极端子连接的第2栅极，
上述第1金属基板与上述第1漏极电连接，上述第2金属基板与上述第2源极电连接。
2.如权利要求1记载的半导体装置，其特征在于，
该半导体装置还具备在上述第1金属基板上设置的二极管。
3.如权利要求2记载的半导体装置，其特征在于，
上述二极管与上述常开启型晶体管的距离比上述常关断型晶体管与上述常开启型晶体管的距离长。
4.如权利要求2记载的半导体装置，其特征在于，
上述二极管是齐纳二极管。
5.如权利要求2记载的半导体装置，其特征在于，
上述二极管是肖特基势垒二极管。
6.一种半导体装置，其特征在于，
具备：
第1金属基板；
第2金属基板，与上述第1金属基板分离；
硅半导体的常关断型晶体管，设置在上述第1金属基板上；以及
氮化物半导体的常开启型晶体管，设置在上述第2金属基板上，
上述常关断型晶体管具有与源极端子连接的第1源极、第1漏极、与栅极端子连接的第1栅极，
上述常开启型晶体管具有与上述第1漏极连接的第2源极、与漏极端子连接的第2漏极、与上述源极端子连接的第2栅极，
上述第1金属基板与上述第1漏极电连接，上述第2金属基板与上述第2漏极电连接，
在上述常开启型晶体管的上表面设有上述第2源极的电极和上述第2漏极的电极。
7.如权利要求1记载的半导体装置，其特征在于，
上述常开启型晶体管是GaN类的HEMT。
8.如权利要求1记载的半导体装置，其特征在于，
上述常关断型晶体管是纵型MOSFET。
9.如权利要求1记载的半导体装置，其特征在于，
在上述第1金属基板与上述第2金属基板之间，设有热传导率比上述第1金属基板以及上述第2金属基板双方的热传导率小的物质。
10.一种半导体装置，其特征在于，
具备：
第1金属基板；
第2金属基板，与上述第1金属基板分离；
硅半导体的常关断型晶体管，设置在上述第1金属基板上；以及
氮化物半导体的常开启型晶体管，设置在上述第2金属基板上，
上述第2金属基板的热传导率比上述第1金属基板的热传导率小。
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