CN104022123A - 一种柔性显示基板及其制备方法、柔性显示装置 - Google Patents
一种柔性显示基板及其制备方法、柔性显示装置 Download PDFInfo
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- CN104022123A CN104022123A CN201410207010.2A CN201410207010A CN104022123A CN 104022123 A CN104022123 A CN 104022123A CN 201410207010 A CN201410207010 A CN 201410207010A CN 104022123 A CN104022123 A CN 104022123A
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- 239000000758 substrate Substances 0.000 title claims abstract description 242
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 230000031700 light absorption Effects 0.000 claims abstract description 107
- 238000000034 method Methods 0.000 claims abstract description 32
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 181
- 239000011248 coating agent Substances 0.000 claims description 81
- 238000000576 coating method Methods 0.000 claims description 81
- 239000010409 thin film Substances 0.000 claims description 67
- 239000011368 organic material Substances 0.000 claims description 36
- 239000002346 layers by function Substances 0.000 claims description 30
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 26
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 25
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- 210000004877 mucosa Anatomy 0.000 description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
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- 230000001678 irradiating effect Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- -1 Merlon Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 208000012839 conversion disease Diseases 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明实施例提供了一种柔性显示基板及其制备方法、柔性显示装置,涉及显示技术领域,可避免柔性基底与承载基板剥离时,光能对薄膜晶体管性能的影响。所述柔性显示基板的制备方法包括:在承载基板上形成柔性基底;在所述柔性基底上形成第一缓冲层;在所述第一缓冲层上形成多个显示元件,所述显示元件包括薄膜晶体管和电极结构,所述薄膜晶体管包括金属氧化物半导体有源层;将所述柔性基底和所述承载基板剥离,得到柔性显示基板;其中,在形成所述显示元件之前,所述方法还包括形成吸光层。用于在柔性基底与承载基板剥离时,需要避免光能对薄膜晶体管性能影响的柔性显示基板的制造。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种柔性显示基板及其制备方法、柔性显示装置。
背景技术
柔性显示技术在近几年有了飞速的发展,由此带动柔性显示器从屏幕的尺寸到显示的质量都取得了很大进步。无论是濒临消失的阴极射线管(Cathode Ray Tube,简称CRT),还是现今主流的液晶显示器(Liquid Crystal Display,简称LCD),本质上都属于传统的刚性显示器。与传统的刚性显示器相比,柔性显示器具有诸多优点,例如耐冲击,抗震能力强,重量轻,体积小,携带更加方便等。
其中,柔性显示器的制作方法一般包括:在承载基板上形成柔性基底,然后在柔性基底上再形成构成显示元件的各膜层等,最后通过例如激光照射法将柔性基底与硬质的承载基板剥离。
然而,若构成显示元件的薄膜晶体管中的有源层采用金属氧化物半导体有源层时,通过激光照射方法使柔性基底与硬质的承载基板剥离时,会使薄膜晶体管的关态电流提高一个数量级,从而对该薄膜晶体管的性能产生影响,进而使产品良率下降。
发明内容
本发明的实施例提供一种柔性显示基板及其制备方法、柔性显示装置,可避免柔性基底与承载基板剥离时,光能对薄膜晶体管性能的影响。
为达到上述目的,本发明的实施例采用如下技术方案:
一方面,提供一种柔性显示基板,包括:柔性基底、设置在所述柔性基底上方的第一缓冲层、设置在所述第一缓冲层远离所述柔性基底一侧的多个显示元件,所述显示元件包括薄膜晶体管和电极结构;其中,所述薄膜晶体管包括金属氧化物半导体有源层;
所述柔性显示基板还包括:设置在所述柔性基底下表面或设置在所述柔性基底和所述显示元件之间的吸光层。
可选的,所述吸光层包括非晶硅层。
可选的,所述吸光层设置在所述柔性基底和所述第一缓冲层之间,且所述吸光层与所述柔性基底和所述第一缓冲层均接触。
可选的,所述吸光层设置在所述第一缓冲层和所述显示元件之间;
所述柔性显示基板还包括设置在所述吸光层和所述显示元件之间的第二缓冲层,且所述吸光层与所述第一缓冲层和所述第二缓冲层均接触。
基于上述,可选的,所述电极结构包括阴极和阳极;其中,所述阴极和所述阳极中的其中一个电极与所述薄膜晶体管的漏极电连接;
所述显示元件还包括设置在所述阴极和所述阳极之间的有机材料功能层。
进一步的,在所述吸光层包括非晶硅层的情况下,所述非晶硅层的面积小于所述第一缓冲层的面积;其中,所述吸光层的边缘与位于边缘的所述显示元件的所述有机材料功能层对齐。
可选的,所述电极结构包括像素电极;其中,所述像素电极与所述薄膜晶体管的漏极电连接。
另一方面,提供一种柔性显示装置,包括:如上任一所述的柔性显示基板。
可选的,在所述柔性显示基板包括阴极、阳极、薄膜晶体管和有机材料功能层的情况下,所述柔性显示装置还包括封装层。
本发明还提供一种柔性显示基板的制备方法,包括:在承载基板上形成柔性基底;在所述柔性基底上形成第一缓冲层;在所述第一缓冲层上形成多个显示元件,所述显示元件包括薄膜晶体管和电极结构,所述薄膜晶体管包括金属氧化物半导体有源层;将所述柔性基底和所述承载基板剥离,得到柔性显示基板;
其中,在形成所述显示元件之前,所述方法还包括形成吸光层。
可选的,所述吸光层包括非晶硅层。
可选的,在形成所述显示元件之前,形成吸光层,包括:
在形成所述柔性基底之前,形成所述吸光层,且所述吸光层与所述柔性基底接触。
或者,在形成所述柔性基底之后,形成所述第一缓冲层之前,形成所述吸光层,且所述吸光层与所述柔性基底和所述第一缓冲层均接触。
或者,在形成所述第一缓冲层之后,形成所述显示元件之前,形成所述吸光层;
所述方法还包括:在形成所述吸光层之后,形成所述显示元件之前,形成第二缓冲层,且所述吸光层与所述第一缓冲层和所述第二缓冲层均接触。
基于上述,可选的,形成电极结构包括:形成阴极和阳极;其中,所述阴极和所述阳极中的其中一个电极与所述薄膜晶体管的漏极电连接;
所述方法还包括:在所述阴极和所述阳极之间形成有机材料功能层。
进一步的,在所述吸光层包括非晶硅层的情况下,所述非晶硅层的面积小于所述第一缓冲层的面积;其中,所述吸光层的边缘与位于边缘的所述显示元件的所述有机材料功能层对齐。
可选的,形成电极结构包括:形成像素电极;其中,所述像素电极与所述薄膜晶体管的漏极电连接。
本发明实施例提供了一种柔性显示基板及其制备方法、柔性显示装置,该柔性显示基板包括:柔性基底、设置在所述柔性基底上方的第一缓冲层、设置在所述第一缓冲层远离所述柔性基底一侧的多个显示元件,所述显示元件包括薄膜晶体管和电极结构;其中,所述薄膜晶体管包括金属氧化物半导体有源层;所述柔性显示基板还包括:设置在所述柔性基底下表面或设置在所述柔性基底和所述显示元件之间的吸光层。
一方面,采用金属氧化物作为有源层的材料,具有更高的电子迁移率和均一性,可以适用于大尺寸柔性显示基板。另一方面,通过设置吸光层,在保证承载基板和柔性基底剥离的情况下,可以吸收例如激光的光能,从而尽可能的减弱到达薄膜晶体管的光能,避免对所述薄膜晶体管性能的影响,从而提高产品良率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种柔性显示基板的结构示意图一;
图2为本发明实施例提供的一种柔性显示基板的结构示意图二;
图3为本发明实施例提供的一种柔性显示基板的结构示意图三;
图4为本发明实施例提供的一种包括像素电极的柔性显示基板的结构示意图;
图5为本发明实施例提供的一种包括像素电极和公共电极的柔性显示基板的结构示意图一;
图6为本发明实施例提供的一种包括像素电极和公共电极的柔性显示基板的结构示意图二;
图7为本发明实施例提供的一种包括阳极、阴极、有机材料功能层的柔性显示装置的结构示意图;
图8为本发明实施例提供的一种制备柔性显示基板的过程示意图一;
图9为本发明实施例提供的一种制备柔性显示基板的过程示意图二;
图10为本发明实施例提供的一种制备柔性显示基板的过程示意图三;
图11为本发明具体实施例提供的一种制备柔性显示装置的过程示意图;
图12为本发明具体实施例制备得到的柔性显示装置的结构示意图。
附图标记:
01-柔性显示基板;10-柔性基底;20-第一缓冲层;30-显示元件;301-薄膜晶体管;302-像素电极;303-公共电极;304-阳极;305-阴极;306-有机材料功能层;40-吸光层;50-第二缓冲层;60-封装层;70-承载基板;3011-栅极;3012-栅绝缘层;3013-金属氧化物半导体有源层;3014-源极;3015-漏极。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明实施例提供了一种柔性显示基板01,如图1至图7所示,该柔性显示基板01包括:柔性基底10、设置在所述柔性基底10上方的第一缓冲层20、设置在所述第一缓冲层20远离所述柔性基底10一侧的多个显示元件30,所述显示元件30包括薄膜晶体管301和电极结构;进一步的,所述柔性显示基板01还包括:设置在所述柔性基底10下表面或设置在所述柔性基底10和所述显示元件30之间的吸光层40。
其中,所述薄膜晶体管301包括栅极3011、栅绝缘层3012、金属氧化物半导体有源层3013、源极3014和漏极3015;当然,在此基础上,所述柔性显示基板01还包括与所述栅极3011电连接的栅线、栅线引线(图中未标识出),与所述源极3014电连接的数据线、数据线引线(图中未标识出)等。
所述金属氧化物半导体有源层3013的材料可以为:氧化锌(ZnO)、铟镓锌氧化物(IGZO)、铟锌氧化物(InZnO)、或锌锡氧化物(ZnSnO)等。
所述柔性基底10的材料可以为聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜、聚对苯二甲酸乙二醇酯和聚萘二甲酸乙二醇酯等。
所述第一缓冲层20可以是单层或多层结构,其材料例如可以是氮化硅(SiNx)、氧化硅(SiOx)、三氧化二铝(Al2O3)、氮化铝(AlN)等。
需要说明的是,第一,在本发明实施例中,所述显示元件30可以理解为,对应所述柔性显示基板01的一个最小的显示单元来说,设置在柔性基底10上的必不可少的、且由各层图案组成的结构,且所述柔性显示基板01包括若干个所述显示元件。
例如当所述柔性显示基板01为液晶显示器(Liquid CrystalDisplay,简称LCD)的阵列基板时,则对于该阵列基板的一个最小显示单元来说,该显示元件至少包括薄膜晶体管301、像素电极302等;当所述柔性显示基板01为有机电致发光二极管(OrganicLight-Emitting Diode,简称OLED)时,则对于一个最小显示单元来说,该显示元件30至少包括阳极304、阴极305和有机材料功能层306。
当然除此之外,还可以包括一些必要的图案层例如保护层等或为改善显示效果或某些缺陷增加的一些图案层。
第二,所述薄膜晶体管301是一种具有开关特性的半导体单元,其可以是顶栅型,也可以是底栅型,在此不作限定。其中,顶栅、底栅是相对所述栅极3011和栅绝缘层3012的位置而定的,即:相对所述柔性基底10,当栅极3011靠近所述柔性基底10,栅绝缘层3012远离所述柔性基底10时,为底栅型薄膜晶体管301;当栅极3011远离所述柔性基底10,栅绝缘层3012靠近所述柔性基底10时,为顶栅型薄膜晶体管301。
第三,本发明实施例中,由于柔性基底10材料的限制,在制备柔性显示基板01的过程中需以硬质的例如玻璃基板为承载基板,在其上形成构成上述柔性显示基板01的各膜层,然后通过例如激光照射将承载基板剥离。
基于此,本发明实施例中可以通过设定吸光层40的厚度、材料的透光率等,以在柔性基底10与承载基板剥离的情况下,尽可能小的避免激光的光能对薄膜晶体管301的性能产生影响。
这里,所述吸光层40的材料可以是任意可以吸收光能且具有相应透光率的材料。
第四,本发明所有实施例的附图均示意性的绘示出与发明点有关的图案层,对于与发明点无关的图案层不进行绘示或仅绘示出部分。
本发明实施例提供了一种柔性显示基板01,包括:柔性基底10、设置在所述柔性基底10上方的第一缓冲层20、设置在所述第一缓冲层20远离所述柔性基底10一侧的多个显示元件30,所述显示元件30包括薄膜晶体管301和电极结构;其中,所述薄膜晶体管301包括金属氧化物半导体有源层3013;进一步的,所述柔性显示基板01还包括:设置在所述柔性基底10下表面或设置在所述柔性基底10和所述显示元件30之间的吸光层40。
一方面,采用金属氧化物作为有源层的材料,具有更高的电子迁移率和均一性,可以适用于大尺寸柔性显示基板。另一方面,通过设置吸光层40,在保证承载基板和柔性基底10剥离的情况下,可以吸收例如激光的光能,从而尽可能的减弱到达薄膜晶体管301的光能,避免对所述薄膜晶体管301性能的影响,从而提高产品良率。
可选的,所述吸光层40可以为非晶硅层;或者也可以是氧化铟锡层(ITO)。
进一步的,考虑到若所述吸光层40的厚度过小,则其对光能的吸收不明显,若所述吸光层40的厚度过大,则其会造成所述柔性显示基板01的整体厚度过大,不利于显示装置轻薄化发展的需要,因此,本发明实施例优选为,所述非晶硅层的厚度在40~70nm之间。
可选的,对于所述吸光层40的设置位置,可以为如下几种情况:
第一种,参考图1所示,所述吸光层40设置在所述柔性基底10的下表面。即在进行例如激光照射将承载基板和柔性基底10剥离之前,所述吸光层40设置在承载基板和所述柔性基底10之间,这样在激光照射时,一方面,可以将柔性基底10和承载基板剥离,其中部分吸光层40或全部会留在所述柔性基底10的下表面,另一方面,由于所述吸光层40可以吸收光能,起到保护位于上方的薄膜晶体管301的作用。
第二种,参考图2所示,所述吸光层40设置在柔性基底10和第一缓冲层20之间,且所述吸光层40与所述柔性基底10和所述第一缓冲层20均接触。即在进行例如激光照射将承载基板和柔性基底10剥离之前,所述柔性基底10的远离所述吸光层40的一侧直接与承载基板接触,这样在激光照射时,一方面,激光的光能将柔性基底10和承载基板剥离,另一方面,传递到柔性基底10上方的光能可以通过所述吸光层40吸收,从而起到保护位于上方的薄膜晶体管301的作用。
其中,所述第一缓冲层20可以起到阻隔水氧、平坦化的作用,并且还可以防止半导体或导体材料的吸光层40与薄膜晶体管301的靠近所述吸光层40的电极形成电容。
第三种,参考图3所示,所述吸光层40设置在所述第一缓冲层20和所述显示元件30之间。即在进行例如激光照射将承载基板和柔性基底10剥离之前,所述柔性基底10的远离所述第一缓冲层20的一侧直接与承载基板接触,这样在激光照射时,一方面,激光的光能将柔性基底10和承载基板剥离,另一方面,传递到柔性基底10上方的光能可以通过所述吸光层40吸收,从而起到保护位于上方的薄膜晶体管301的作用。
在此情况下,优选为在所述吸光层40远离所述第一缓冲层20的一侧设置第二缓冲层50,且所述吸光层40与所述第一缓冲层20和所述第二缓冲层50均接触。其中,所述第一缓冲层20可以起到阻隔水氧、平坦化的作用;第二缓冲层50可以防止半导体或导体材料的吸光层40与薄膜晶体管301的靠近所述吸光层40的电极形成电容。
基于上述三种情况,需要说明的是,第一,由于所述吸光层40的设置是为保护例如激光照射时对薄膜晶体管301的破坏,因此所述吸光层40需与像素区的所有薄膜晶体管301对应。
第二,上述的显示元件可以是例如如图4所示的包括薄膜晶体管301和像素电极302的显示元件30,也可以是例如如图5和图6所示的包括薄膜晶体管301、像素电极302和公共电极303的显示元件30,当然也可以是例如如图7所示的包括薄膜晶体管301、阳极304、阴极305和有机材料功能层306的显示元件30。
第三,在所述吸光层40包括非晶硅层的情况下,所述非晶硅层的面积小于所述第一缓冲层20的面积;其中,所述吸光层40的边缘与位于边缘的所述显示元件30的所述有机材料功能层306对齐。
这是由于当所述显示元件30为包括薄膜晶体管301、阳极304、阴极305和有机材料功能层306的显示元件时,其中的有机材料功能层306的制备一般是通过掩膜板来控制其在基板上的镀膜位置,而所述非晶硅不是完全透明的,这样的话可能使得有机材料功能层306蒸镀时不能准确的对位,因此本发明实施例中将吸光层40的周边刻蚀掉,这样在有机材料功能层306蒸镀时,便可以通过吸光层40的边缘来与掩膜板进行对位,从而使得能准确的对位。
在此情况下,对于上述第三种情况,可以将第二缓冲层50与位于其下方的非晶硅层同时进行刻蚀,从而使对位更为准确。
基于上述的描述,如图4所示,当所述柔性显示基板01为LCD的阵列基板时,所述电极结构包括像素电极302,所述像素电极302与所述薄膜晶体管301的漏极3015电连接。
如图5和图6所示,所述电极结构还可以同时包括像素电极302和公共电极303。在此情况下,所述显示元件30还可以包括层间绝缘层。其中,对于共平面切换型(In-Plane Switch,简称IPS)阵列基板而言,如图6所示,所述像素电极302和所述公共电极303同层间隔设置,且均为条状电极;对于高级超维场转换型(Advanced-super DimensionalSwitching,简称ADS)阵列基板而言,如图5所示,所述像素电极302和所述公共电极303不同层设置,其中在上的电极为条状电极,在下的电极为板状电极或条状电极。
如图7所示,当所述柔性显示基板01为OLED的背板时,所述电极结构包括阳极304和阴极305,所述阳极304和阴极305中的一个电极与所述薄膜晶体管301的漏极3015电连接。在此情况下,所述显示元件30还包括设置在所述阳极304和阴极305之间的有机材料功能层306;所述有机材料功能层306可以包括电子传输层、发光层和空穴传输层;为了能够提高所述电子和所述空穴注入发光层的效率,所述有机材料功能层306还可以包括设置在所述阴极305与所述电子传输层之间的电子注入层,以及在所述阳极304与所述空穴传输层之间的空穴注入层。
本发明实施例还提供了一种柔性显示装置,其包括上述任意一种柔性显示基板。所述柔性显示装置可以为:液晶面板、电子纸、OLED面板、手机、平板电脑、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
在此基础上,对于柔性显示基板01为OLED的背板时,柔性显示基板01包括阳极304、阴极305、薄膜晶体管301和有机材料功能层306。由于有机材料功能层306材料的特殊性,在制作完上述显示结构后,如图7所示,还必须形成用于封装有机材料的封装层60以阻隔水氧,从而形成柔性显示装置。
这里,根据所述阳极304和所述阴极305的材料的不同,可以分为单面发光型柔性显示装置和双面发光型柔性显示装置。即:当所述阳极304和所述阴极305中其中一个电极的材料为不透明材料时,所述柔性显示装置为单面发光型;当所述阳极304和所述阴极305的材料均为透明材料时,所述柔性显示装置为双面发光型。
对于单面发光型柔性显示装置,根据所述阳极304和所述阴极305的材料的不同,又可以分为上发光型和下发光型。具体的,当所述阳极304靠近所述柔性基底10设置,所述阴极305远离所述柔性基底10设置,且所述阳极304的材料为透明导电材料,所述阴极305的材料为不透明导电材料时,由于光从阳极304、再经柔性基底10一侧出射,因此,可以称为下发光型;当所述阳极304的材料为不透明导电材料,所述阴极305的材料为透明或半透明导电材料时,由于光从阴极305、再经与柔性基底10相对设置的封装层60出射,因此,可以称为上发光型。当然,也可以将上述两种阳极304和阴极305的相对位置进行替换,在此再赘述。
其中,所述封装层60可以是柔性封装基板,也可以是一层薄膜,在此不作限定。
对于双面发光型柔性显示装置,当所述阳极304靠近所述柔性基底10设置,所述阴极305远离所述柔性基底10设置,或当所述阳极304远离所述柔性基底10设置,所述阴极305靠近所述柔性基底10设置,且所述阳极304和所述阴极305的材料为透明或半透明导电材料例如ITO(Indium Tin Oxides,氧化铟锡)或厚度较薄的金属材料时,由于光一方面从阳极304、再经柔性基底10一侧出射,另一方面从阴极305、再经与柔性基底10相对设置的封装层60出射,因此可以称为双面发光型。
本发明实施例还提供了一种柔性显示基板的制备方法,如图8至图10所示,该方法包括:在承载基板70上形成柔性基底10;在所述柔性基底10上形成第一缓冲层20;在所述第一缓冲层20上形成多个显示元件30,所述显示元件30包括薄膜晶体管301和电极结构,所述薄膜晶体管301包括金属氧化物半导体有源层3013;将所述柔性基底10和所述承载基板70剥离,得到柔性显示基板01;其中,在形成所述显示元件30之前,所述方法还包括形成吸光层40。
需要说明的是,第一,所述薄膜晶体管301可以是顶栅型,也可以是底栅型,在此不作限定。
第二,所述吸光层40的材料可以是任意可以吸收光能且具有相应透光率的材料。
第三,不对所述吸光层40的形成位置进行限定,其可以形成在承载基板70和显示元件30之间的任何位置,以能在柔性基底10与承载基板70剥离时,避免例如激光光能对薄膜晶体管301的破坏为准。
本发明实施例提供了一种柔性显示基板的制备方法,包括:在承载基板70上形成柔性基底10;在所述柔性基底10上形成第一缓冲层20;在所述第一缓冲层20上形成多个显示元件30,所述显示元件30包括薄膜晶体管301和电极结构,所述薄膜晶体管301包括金属氧化物半导体有源层3013;将所述柔性基底10和所述承载基板70剥离,得到柔性显示基板01;其中,在形成所述显示元件30之前,所述方法还包括形成吸光层40。
一方面,采用金属氧化物作为有源层的材料,具有更高的电子迁移率和均一性,可以适用于大尺寸柔性显示基板。另一方面,通过设置吸光层40,在保证承载基板70和柔性基底10剥离的情况下,可以吸收例如激光的光能,从而尽可能的减弱到达薄膜晶体管301的光能,避免对所述薄膜晶体管301性能的影响,从而提高产品良率。
可选的,所述吸光层40可以为非晶硅层;或者也可以是ITO。
进一步的,考虑到若所述吸光层40的厚度过小,则其对光能的吸收不明显,若所述吸光层40的厚度过大,则其会造成所述柔性显示基板01的整体厚度过大,不利于显示装置轻薄化发展的需要,因此,本发明实施例优选为,所述非晶硅层的厚度在40~70nm之间。
可选的,所述柔性显示基板01的制备方法具体可以通过以下几种方式实现:
第一种:如图8所示,在承载基板70上形成吸光层40,在所述吸光层40上形成柔性基底10,在柔性基底10上形成第一缓冲层20,在所述第一缓冲层20上形成多个显示元件30,通过激光照射方法将所述柔性基底10和所述承载基板70剥离,得到参考图1所述的柔性显示基板01。其中,需要说明的是,所述吸光层40与所述柔性基底10接触;所述吸光层40与所述承载基板70可以接触,也可以不接触,例如可以在所述承载基板70和所述吸光层40之间形成牺牲层等其他膜层,用于辅助实现将柔性显示基板01和承载基板70剥离。
第二种,如图9所示,在承载基板70上形成所述柔性基底10,在所述柔性基底10上形成所述吸光层40,在所述吸光层40上形成所述第一缓冲层20,在所述第一缓冲层上形成多个显示元件30,通过激光照射方法将所述柔性基底10和所述承载基板70剥离,得到参考图2所述的柔性显示基板01。其中,所述吸光层40与所述柔性基底10和所述第一缓冲层20均接触。
第三种,如图10所示,在承载基板70上形成所述柔性基底10,在所述柔性基底10上形成第一缓冲层20,在第一缓冲层20上形成吸光层40,在吸光层40上形成第二缓冲层50,在所述第二缓冲层50上形成多个显示元件30,通过激光照射方法将所述柔性基底10和所述承载基板70剥离,得到参考图3所述的柔性显示基板01。其中,所述吸光层40与所述第一缓冲层20和所述第二缓冲层50均接触。
基于上述的描述,参考图4所示,当所述柔性显示基板01为LCD的阵列基板时,形成所述显示元件30具体可以为:形成所述薄膜晶体管301、与所述薄膜晶体管301的漏极3015电连接的像素电极302。
当然,参考图5和图6所示,进一步的还形成公共电极303。
参考图7所示,当所述柔性显示基板01为OLED的背板时,形成所述显示元件30具体可以为:形成所述薄膜晶体管301、阳极304、阴极305、在所述阴极305和所述阳极304之间的有机材料功能层306,所述阴极305和所述阳极304中的其中一个电极与所述薄膜晶体管301的漏极3015电连接。至此,柔性显示基板01的制备完成。
在此基础上,在形成所述显示元件30后,所述柔性基底10和所述承载基板70剥离之前,还可以后续形成用于封装有机材料的封装层60,以阻隔水氧,从而制得柔性显示装置。
其中,在所述吸光层40包括非晶硅层的情况下,所述非晶硅层的面积小于所述第一缓冲层20的面积;其中,所述吸光层40的边缘与位于边缘的所述显示元件30的所述有机材料功能层306对齐。
这是由于当所述显示元件30为包括薄膜晶体管301、阳极304、阴极305和有机材料功能层306的显示元件时,其中的有机材料功能层306的制备一般是通过掩膜板来控制其在基板上的镀膜位置,而所述非晶硅不是完全透明的,这样的话可能使得有机材料功能层306蒸镀时不能准确的对位,因此本发明实施例中将吸光层40的周边刻蚀掉,这样在有机材料功能层306蒸镀时,便可以通过吸光层40的边缘来与掩膜板进行对位,从而使得能准确的对位。
在此情况下,也可以将第二缓冲层50与位于其下方的非晶硅层同时进行刻蚀,从而使对位更为准确。
下面提供一具体实施例以详细描述上述的一种柔性显示装置的制备方法。该方法包括如下步骤:
S101、如图11所示,在承载基板70上沉积一层聚酰亚胺膜,形成柔性基底10。
所述柔性基底10的厚度可以为10μm。
S102、如图11所示,在完成S101的基板上,沉积一层氮化硅(SiNx)膜,形成第一缓冲层20。
所述第一缓冲层20的厚度可以为200nm。
本步骤中,除沉积SiNx外,还可以沉积三氧化二铝(Al2O3)、氮化铝(AlN)、氮化硅(SiNx)、氧化硅(SiOx)等。
S103、如图11所示,在完成S102的基板上,沉积一层非晶硅(a-si)膜,在所述非晶硅膜上沉积一层SiNx膜,并通过一次构图工艺,将a-si膜和SiNx膜的周边刻蚀掉,形成吸光层40和位于所述吸光层40上的第二缓冲层50。
所述吸光层40的厚度可以为45nm,第二缓冲层50的厚度可以为200nm。
S104、如图11所示,在完成S103的基板上,依次形成栅极3011、栅绝缘层3012、金属氧化物半导体有源层3013、源极3014和漏极3015。
S105、如图11所示,在完成S104的基板上,依次形成阳极304、有机材料功能层306、阴极305,所述阳极304与所述漏极3015电连接。
其中,在蒸镀形成有机材料功能层306时,可以通过所述吸光层40和第二缓冲层50的边缘来与掩膜板进行对位,从而使每个子像素的有机材料功能层306形成在合适的位置。
S106、如图11所示,在完成S105的基板上,采用封装层60进行封装。
S107、在完成S106的基板上,采用激光照射方法使所述柔性基底10和所述承载基板70剥离,得到如图12所示的柔性显示装置。
本发明实施例中,通过吸光层40,在承载基板70和柔性基底10剥离的情况下,可以吸收激光的光能,从而尽可能的减弱到达薄膜晶体管301的光能,避免对所述薄膜晶体管301性能的影响,从而提高产品良率。此外通过将吸光层40和第二缓冲层50的周边刻蚀掉,可以提高有机材料蒸镀时的对位精度。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (17)
1.一种柔性显示基板,其特征在于,包括:柔性基底、设置在所述柔性基底上方的第一缓冲层、设置在所述第一缓冲层远离所述柔性基底一侧的多个显示元件,所述显示元件包括薄膜晶体管和电极结构;其中,所述薄膜晶体管包括金属氧化物半导体有源层;
所述柔性显示基板还包括:设置在所述柔性基底下表面或设置在所述柔性基底和所述显示元件之间的吸光层。
2.根据权利要求1所述的柔性显示基板,其特征在于,所述吸光层包括非晶硅层。
3.根据权利要求1所述的柔性显示基板,其特征在于,所述吸光层设置在所述柔性基底和所述第一缓冲层之间,且所述吸光层与所述柔性基底和所述第一缓冲层均接触。
4.根据权利要求1所述的柔性显示基板,其特征在于,所述吸光层设置在所述第一缓冲层和所述显示元件之间;
所述柔性显示基板还包括设置在所述吸光层和所述显示元件之间的第二缓冲层,且所述吸光层与所述第一缓冲层和所述第二缓冲层均接触。
5.根据权利要求1至4任一项所述的柔性显示基板,其特征在于,所述电极结构包括阴极和阳极;其中,所述阴极和所述阳极中的其中一个电极与所述薄膜晶体管的漏极电连接;
所述显示元件还包括设置在所述阴极和所述阳极之间的有机材料功能层。
6.根据权利要求5所述的柔性显示基板,其特征在于,在所述吸光层包括非晶硅层的情况下,所述非晶硅层的面积小于所述第一缓冲层的面积;
其中,所述吸光层的边缘与位于边缘的所述显示元件的所述有机材料功能层对齐。
7.根据权利要求1至4任一项所述的柔性显示基板,其特征在于,所述电极结构包括像素电极;其中,所述像素电极与所述薄膜晶体管的漏极电连接。
8.一种柔性显示装置,其特征在于,包括:
权利要求1至7任一项所述的柔性显示基板。
9.根据权利要求8所述的柔性显示装置,其特征在于,在所述柔性显示基板包括阴极、阳极、薄膜晶体管和有机材料功能层的情况下,所述柔性显示装置还包括封装层。
10.一种柔性显示基板的制备方法,其特征在于,包括:
在承载基板上形成柔性基底;
在所述柔性基底上形成第一缓冲层;
在所述第一缓冲层上形成多个显示元件,所述显示元件包括薄膜晶体管和电极结构,所述薄膜晶体管包括金属氧化物半导体有源层;
将所述柔性基底和所述承载基板剥离,得到柔性显示基板;
其中,在形成所述显示元件之前,所述方法还包括形成吸光层。
11.根据权利要求10所述的方法,其特征在于,所述吸光层包括非晶硅层。
12.根据权利要求10所述的方法,其特征在于,在形成所述显示元件之前,形成吸光层,包括:
在形成所述柔性基底之前,形成所述吸光层,且所述吸光层与所述柔性基底接触。
13.根据权利要求10所述的方法,其特征在于,在形成所述显示元件之前,形成吸光层,包括:
在形成所述柔性基底之后,形成所述第一缓冲层之前,形成所述吸光层,且所述吸光层与所述柔性基底和所述第一缓冲层均接触。
14.根据权利要求10所述的方法,其特征在于,在形成所述显示元件之前,形成吸光层,包括:
在形成所述第一缓冲层之后,形成所述显示元件之前,形成所述吸光层;
所述方法还包括:在形成所述吸光层之后,形成所述显示元件之前,形成第二缓冲层,且所述吸光层与所述第一缓冲层和所述第二缓冲层均接触。
15.根据权利要求10至14任一项所述的方法,其特征在于,形成电极结构包括:形成阴极和阳极;其中,所述阴极和所述阳极中的其中一个电极与所述薄膜晶体管的漏极电连接;
所述方法还包括:在所述阴极和所述阳极之间形成有机材料功能层。
16.根据权利要求15所述的方法,其特征在于,在所述吸光层包括非晶硅层的情况下,所述非晶硅层的面积小于所述第一缓冲层的面积;
其中,所述吸光层的边缘与位于边缘的所述显示元件的所述有机材料功能层对齐。
17.根据权利要求10至14任一项所述的方法,其特征在于,形成电极结构包括:形成像素电极;其中,所述像素电极与所述薄膜晶体管的漏极电连接。
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