CN103500756A - 有机电致发光器件及其制作方法 - Google Patents

有机电致发光器件及其制作方法 Download PDF

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CN103500756A
CN103500756A CN201310500889.5A CN201310500889A CN103500756A CN 103500756 A CN103500756 A CN 103500756A CN 201310500889 A CN201310500889 A CN 201310500889A CN 103500756 A CN103500756 A CN 103500756A
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China
Prior art keywords
layer
electroluminescence device
organic electroluminescence
organic
light
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CN201310500889.5A
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徐源竣
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201310500889.5A priority Critical patent/CN103500756A/zh
Priority to PCT/CN2013/091204 priority patent/WO2015058459A1/zh
Priority to US14/345,744 priority patent/US9165990B1/en
Publication of CN103500756A publication Critical patent/CN103500756A/zh
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  • Thin Film Transistor (AREA)

Abstract

本发明提供一种有机电致发光器件及其制作方法，所述有机电致发光器件包括：有机衬底层（22），提供柔性的基底并隔绝外部湿气；吸光层（24），设置在所述有机衬底层（22）之上；有源薄膜晶体管像素阵列，设置在所述吸光层（24）之上，所述有源薄膜晶体管像素阵列包括至少一经由激光退火工艺形成的结晶半导体层；以及有机电致发光层（29），设置在所述有源薄膜晶体管像素阵列之上；其中，所述吸光层（24）吸收在所述激光退火工艺中透过所述有源薄膜晶体管像素阵列而照射至所述吸光层（24）的激光，以避免所述有机衬底层（22）受所述激光影响而劣化。

Description

有机电致发光器件及其制作方法
技术领域
本发明涉及平面显示领域，尤其涉及一种有机电致发光器件及其制作方法。
背景技术
平面显示装置具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平面显示装置主要包括液晶显示器（Liquid Crystal Display，LCD）及有机电致发光器件（Organic Electroluminescence Device，OELD）,也称为有机发光二极管（Organic Light Emitting Diode，OLED）。
现有的液晶显示器一般为背光型液晶显示器，其包括：壳体、设于壳体内的液晶显示面板及设于壳体内的背光模组（Backlight Module）。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，并在两玻璃基板上施加驱动电压来控制液晶分子的旋转，从而将背光模组的光线折射出来产生画面。
请参阅图1，现有的液晶显示面板一般包括：薄膜晶体管（Thin FilmTransistor，TFT）基板302，与薄膜晶体管基板302相对贴合设置的彩色滤光片（Color Filter，CF）基板304，以及设于薄膜晶体管基板302与彩色滤光片基板304之间的液晶层306，薄膜晶体管基板302驱动液晶层306内的液晶分子转动，以显示相应的画面。
有机电致发光器件具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性，因此受到广泛的关注，并作为新一代的显示方式，已开始逐渐取代传统液晶显示装置，被广泛应用在手机屏幕、电脑显示器、全彩电视机等领域。有机电致发光器件与传统的液晶显示器不同，其无需背光源，直接在玻璃基板上设置非常薄的有机材料涂层，当有电流通过时，这些有机材料涂层就会发光。
现有的有机发光显示装置按驱动方式分类，包括：无源矩阵式有机发光显示装置（Passive-matrix organic light emitting diode，PMOLED）与有源矩阵式有机发光显示装置（Active-matrix organic light emitting diode，AMOLED），其中，请参阅图2，所述有源矩阵式有机发光显示装置一般包括：基板502、形成于基板502上的薄膜晶体管504及形成于薄膜晶体管504上的有机发光二极管506，所述薄膜晶体管504驱动有机发光二极管506发光，进而显示相应画面。
现有的活化方式一般为高温活化与激光（laser）活化，采用高温活化时，由于PI层的存在，使得其活化温度不能大于400℃，但如果温度小于400℃，那么会导致活化能力不足，OLED薄膜晶体管基板品质下降；采用激光活化时，激光照射到PI层会使得该PI层吸收激光而发生变质，进而导致OLED薄膜晶体管基板的良率下降，增加了生产成本。
发明内容
本发明的目的在于提供一种有机电致发光器件，其通过设置吸光层，可以在对多晶硅层进行激光活化制程中防止PI层变质，良率高，有效降低生产成本。
本发明的另一目的在于提供一种有机电致发光器件的制作方法，其通过在有机衬底层与缓冲层之间设置吸光层，在对多晶硅层进行激光活化制程中，有效避免由于有机衬底层吸收激光而导致的变质，进而提升有机电致发光器件良率，降低生产成本。
为实现上述目的，本发明提供一种有机电致发光器件，包括：有机衬底层，提供柔性的基底并隔绝外部湿气；
吸光层，设置在所述有机衬底层之上；
有源薄膜晶体管像素阵列，设置在所述吸光层之上，所述有源薄膜晶体管像素阵列包括至少一经由激光退火工艺形成的结晶半导体层；以及
有机电致发光层，设置在所述有源薄膜晶体管像素阵列之上；
其中，所述吸光层吸收在所述激光退火工艺中透过所述有源薄膜晶体管像素阵列而照射至所述吸光层的激光，以避免所述有机衬底层受所述激光影响而劣化。
所述有机电致发光器件设置在一基板之上。
所述有机衬底层包括聚酰亚胺。
所述结晶半导体层包括多晶硅、连续晶界硅之一或其组合。
所述激光退火工艺使用准分子紫外激光，所述吸光层包括紫外光谱吸收材料，以吸收照射至所述吸光层的准分子紫外激光。
所述吸光层为单层结构，其包括非晶硅、富硅氧化硅、富硅氮化硅之一或其组合。
所述吸光层为多层结构，其中至少一层包括非晶硅、富硅氧化硅、富硅氮化硅之一或其组合。
所述有机电致发光器件进一步包括缓冲层，所述缓冲层设置在所述吸光层与所述有源薄膜晶体管像素阵列之间，以防止杂质扩散至所述有源薄膜晶体管像素阵列。
所述有源薄膜晶体管像素阵列包括：
包括源极区、漏极区和通道区的所述结晶半导体层；
设置在所述半导体层上的栅极绝缘层；
设置在栅极绝缘层上的栅极；
设置在栅极上的保护层；
设置在保护层上的源极/漏极，所述源极通过通孔与所述源极区电连接，所述漏极通过通孔与所述漏极区电连接；
设置在源/漏极上的钝化层。
所述保护层包括氧化硅、氮化硅之一或其组合。
所述有机电致发光层设置在所述钝化层之上。
所述有机电致发光器件进一步包括支撑体，所述支撑体设置在所述有机电致发光层之上。
本发明还提供一种有机电致发光器件的制作方法，包括以下步骤：
步骤1、提供一基板；
步骤2、在所述基板上形成有机衬底层；
步骤3、在所述有机衬底层上形成吸光层，所述吸光层用于吸收照射至其表面的激光；
步骤4、在所述吸光层上形成缓冲层；
步骤5、在缓冲层上形成非晶硅层，通过激光退火工艺将该非晶硅层转变为多晶硅层，并图案化该多晶硅层；
步骤6、对多晶硅层进行掺杂制程；
步骤7、激光活化所述多晶硅层内的杂质；
步骤8、在所述多晶硅层上依次形成栅极绝缘层、栅极、保护层、源/漏极、钝化层、像素电极及有机层。
所述吸光层的吸收波长范围包括308nm。
所述吸光层为单层或多层结构，其中包括非晶硅、富硅氧化硅、富硅氮化硅之一或其组合。
所述缓冲层包括形成于吸光层上的氮化硅层及形成于氮化硅层上的氧化硅层；所述栅极的材料包含有铝或钼中至少一种；所述源/漏极的材料包含有铝；所述像素电极的材料包含有氧化铟锡或银中至少一种；所述保护层包括形成于栅极上的氧化硅层及形成于氧化硅层上的氮化硅层。
本发明的有益效果：本发明有机电致发光器件及其制作方法通过在有机衬底层与缓冲层之间设置吸光层，在对多晶硅层进行激光活化制程中，有效避免由于有机衬底层吸收激光而导致的变质，进而提高有机电致发光器件的良率，且，其制程简单，成本低，利于成本控制。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的液晶显示面板的结构示意图；
图2为现有的有源矩阵式有机发光显示装置的结构示意图；
图3为本发明有机电致发光器件基板的结构示意图；
图4为本发明有机电致发光器件的制作流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3，本发明提供一种有机电致发光器件，所述有机电致发光器件设置在一基板20之上，其包括：有机衬底层22，提供柔性的基底并隔绝外部湿气；吸光层24，设置在所述有机衬底层22之上；有源薄膜晶体管像素阵列，设置在所述吸光层24之上，所述有源薄膜晶体管像素阵列包括至少一经由激光退火工艺形成的结晶半导体层；以及有机电致发光层29，设置在所述有源薄膜晶体管像素阵列之上；其中，所述吸光层24吸收在所述激光退火工艺中透过所述有源薄膜晶体管像素阵列而照射至所述吸光层24的激光，以避免所述有机衬底层22受所述激光影响而劣化，进而提高有机电致发光器件的良率。
具体地，所述有机衬底层22包括聚酰亚胺。所述结晶半导体层包括多晶硅、连续晶界硅之一或其组合。所述激光退火工艺使用准分子紫外激光，所述吸光层24包括紫外光谱吸收材料，以吸收照射至所述吸光层24的准分子紫外激光。
所述吸光层24为单层结构或多层结构，当所述吸光层24为单层结构时，其包括非晶硅、富硅氧化硅、富硅氮化硅之一或其组合；当所述吸光层24为多层结构时，其中至少一层包括非晶硅、富硅氧化硅、富硅氮化硅之一或其组合；且无论所述吸光层24为单层或多层结构都能够有效吸收波长为308nm的激光，进而有效地避免有机衬底层22受所述激光影响而劣化。
进一步地，所述有机电致发光器件进一步包括缓冲层262，其通过化学气相沉积（Chemical vapor deposition，CVD）方式设置在所述吸光层24与所述有源薄膜晶体管像素阵列之间，以防止杂质扩散至所述有源薄膜晶体管像素阵列。
所述有源薄膜晶体管像素阵列包括：包括源极区、漏极区和通道区的所述结晶半导体层；设置在所述半导体层263上的栅极绝缘层264；设置在栅极绝缘层264上的栅极265；设置在栅极265上的保护层266；设置在保护层266上的源极/漏极267，所述源极通过通孔与所述源极区电连接，所述漏极通过通孔与所述漏极区电连接；设置在源/漏极267上的钝化层27。
进一步地，所述栅极265的材料包含有铝（Al）、钼（Mo）中至少一种。所述源/漏极267的材料包含有铝、钼中至少一种。所述保护层266包括氧化硅、氮化硅之一或其组合。所述有机电致发光层29设置在所述钝化层27之上。所述有机电致发光器件进一步包括支撑体（PS）30，所述支撑体30设置在所述有机电致发光层29之上。
请参阅图4，并参考图3，本发明还提供一种有机电致发光器件的制作方法，包括以下步骤：
步骤1、提供一基板20。
在本实施例中，所述基板20为透明基板，优选玻璃基板。
步骤2、在所述基板20上形成有机衬底层22。
所述有机衬底层22包括聚酰亚胺，其通过涂布（Coating）方式形成于基板20上，用于提供柔性的基底并隔绝外部湿气。
步骤3、在所述有机衬底层22上形成吸光层24，所述吸光层24用于吸收照射至其表面的激光。
所述吸光层24包括紫外光谱吸收材料，吸收在所述激光退火工艺中透过所述有源薄膜晶体管像素阵列而照射至所述吸光层24的激光，以避免所述有机衬底层22受所述激光影响而劣化，进而提高有机电致发光器件的良率。
具体地，所述吸光层24为单层结构或多层结构，当所述吸光层24为单层结构时，其包括非晶硅、富硅氧化硅、富硅氮化硅之一或其组合；当所述吸光层24为多层结构时，其中至少一层包括非晶硅、富硅氧化硅、富硅氮化硅之一或其组合；且无论所述吸光层24为单层或多层结构都能够有效吸收波长为308nm的激光，进而有效地避免有机衬底层22受所述激光影响而劣化。
步骤4、在所述吸光层24上形成缓冲层262。
所述缓冲层262通过化学气相沉积方式设置在所述吸光层24与所述有源薄膜晶体管像素阵列之间，以防止杂质扩散至所述有源薄膜晶体管像素阵列。
步骤5、在缓冲层262上形成非晶硅层，通过激光退火工艺将该非晶硅层转变为多晶硅层263，并图案化该多晶硅层263。
所述结晶半导体层包括多晶硅、连续晶界硅之一或其组合。所述激光退火工艺使用准分子紫外激光，所述吸光层24吸收照射至所述吸光层24的准分子紫外激光。
步骤6、对多晶硅层263进行掺杂制程。
该掺杂制程可选有现有技术实现，均可实现本发明的技术效果。
步骤7、激光活化所述多晶硅层263内的杂质。
这里，我们一般选用波长为308nm的激光（氙氯激光），当用该激光对多晶硅层263内的杂质进行活化时，所述吸光层24吸收照射到其表面的激光能量，有效保护有机衬底层22，避免有机衬底层22受所述激光影响而劣化。
步骤8、在所述多晶硅层263上依次形成栅极绝缘层264、栅极265、保护层266、源/漏极267、钝化层27、像素电极28及有机层29。
所述源极通过通孔与所述源极区电连接，所述漏极通过通孔与所述漏极区电连接；设置在源/漏极267上的钝化层27。
进一步地，所述栅极265的材料包含有铝（Al）、钼（Mo）中至少一种。所述源/漏极267的材料包含有铝、钼中至少一种。所述保护层266包括氧化硅、氮化硅之一或其组合。所述有机电致发光层29设置在所述钝化层27之上。
综上所述，本发明有机电致发光器件及其制作方法通过在有机衬底层与缓冲层之间设置吸光层，在对多晶硅层进行激光活化制程时，有效避免由于有机衬底层吸收激光而导致的变质，进而提高有机电致发光器件良率，且，其制程简单，成本低，利于成本控制。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (16)

1.一种有机电致发光器件，其特征在于，包括：
有机衬底层（22），提供柔性的基底并隔绝外部湿气；
吸光层（24），设置在所述有机衬底层（22）之上；
有源薄膜晶体管像素阵列，设置在所述吸光层（24）之上，所述有源薄膜晶体管像素阵列包括至少一经由激光退火工艺形成的结晶半导体层；以及
有机电致发光层（29），设置在所述有源薄膜晶体管像素阵列之上；
其中，所述吸光层（24）吸收在所述激光退火工艺中透过所述有源薄膜晶体管像素阵列而照射至所述吸光层（24）的激光，以避免所述有机衬底层（22）受所述激光影响而劣化。
2.如权利要求1所述的有机电致发光器件，其特征在于，所述有机电致发光器件设置在一基板（20）之上。
3.如权利要求1所述的有机电致发光器件，其特征在于，所述有机衬底层（22）包括聚酰亚胺。
4.如权利要求1所述的有机电致发光器件，其特征在于，所述结晶半导体层包括多晶硅、连续晶界硅之一或其组合。
5.如权利要求1所述的有机电致发光器件，其特征在于，所述激光退火工艺使用准分子紫外激光，所述吸光层（24）包括紫外光谱吸收材料，以吸收照射至所述吸光层（24）的准分子紫外激光。
6.如权利要求1所述的有机电致发光器件，其特征在于，所述吸光层（24）为单层结构，其包括非晶硅、富硅氧化硅、富硅氮化硅之一或其组合。
7.如权利要求1所述的有机电致发光器件，其特征在于，所述吸光层（24）为多层结构，其中至少一层包括非晶硅、富硅氧化硅、富硅氮化硅之一或其组合。
8.如权利要求1所述的有机电致发光器件，其特征在于，所述有机电致发光器件进一步包括缓冲层（262），所述缓冲层（262）设置在所述吸光层（24）与所述有源薄膜晶体管像素阵列之间，以防止杂质扩散至所述有源薄膜晶体管像素阵列。
9.如权利要求1所述的有机电致发光器件，其特征在于，所述有源薄膜晶体管像素阵列包括：
包括源极区、漏极区和通道区的所述结晶半导体层；
设置在所述半导体层（263）上的栅极绝缘层（264）；
设置在栅极绝缘层（264）上的栅极（265）；
设置在栅极（265）上的保护层（266）；
设置在保护层（266）上的源极/漏极（267），所述源极通过通孔与所述源极区电连接，所述漏极通过通孔与所述漏极区电连接；
设置在源/漏极（267）上的钝化层（27）。
10.如权利要求9所述的有机电致发光器件，其特征在于，所述保护层（266）包括氧化硅、氮化硅之一或其组合。
11.如权利要求9所述的有机电致发光器件，其特征在于，所述有机电致发光层（29）设置在所述钝化层（27）之上。
12.如权利要求11所述的有机电致发光器件，其特征在于，所述有机电致发光器件进一步包括支撑体（30），所述支撑体（30）设置在所述有机电致发光层（29）之上。
13.一种有机电致发光器件的制作方法，其特征在于，包括以下步骤：
步骤1、提供一基板（20）；
步骤2、在所述基板（20）上形成有机衬底层（22）；
步骤3、在所述有机衬底层（22）上形成吸光层（24），所述吸光层（24）用于吸收照射至其表面的激光；
步骤4、在所述吸光层（24）上形成缓冲层（262）；
步骤5、在缓冲层（262）上形成非晶硅层，通过激光退火工艺将该非晶硅层转变为多晶硅层（263），并图案化该多晶硅层（263）；
步骤6、对多晶硅层（263）进行掺杂制程；
步骤7、激光活化所述多晶硅层（263）内的杂质；
步骤8、在所述多晶硅层（263）上依次形成栅极绝缘层（264）、栅极（265）、保护层（266）、源/漏极（267）、钝化层（27）、像素电极（28）及有机层（29）。
14.如权利要求13所述的有机电致发光器件的制作方法，其特征在于，所述吸光层（24）的吸收波长范围包括308nm。
15.如权利要求13所述的有机电致发光器件的制作方法，其特征在于，所述吸光层（24）为单层或多层结构，其中包括非晶硅、富硅氧化硅、富硅氮化硅之一或其组合。
16.如权利要求13所述的有机电致发光器件的制作方法，其特征在于，所述缓冲层（262）包括形成于吸光层（24）上的氮化硅层及形成于氮化硅层上的氧化硅层；所述栅极（265）的材料包含有铝或钼中至少一种；所述源/漏极（267）的材料包含有铝；所述像素电极（28）的材料包含有氧化铟锡或银中至少一种；所述保护层（266）包括形成于栅极（265）上的氧化硅层及形成于氧化硅层上的氮化硅层。
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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104022123A (zh) * 2014-05-16 2014-09-03 京东方科技集团股份有限公司 一种柔性显示基板及其制备方法、柔性显示装置
CN104465702A (zh) * 2014-11-03 2015-03-25 深圳市华星光电技术有限公司 Amoled背板的制作方法
CN104752489A (zh) * 2015-04-10 2015-07-01 深圳市华星光电技术有限公司 阵列基板、显示装置及用于制备阵列基板的方法
CN105118837A (zh) * 2015-09-16 2015-12-02 京东方科技集团股份有限公司 一种柔性基底及其制备方法、显示装置
CN106252214A (zh) * 2016-08-31 2016-12-21 武汉华星光电技术有限公司 一种制备柔性显示器件的离子活化方法
CN107068885A (zh) * 2017-04-26 2017-08-18 深圳国冶星光电科技股份有限公司 一种有机发光二极管曲面显示面板、显示装置及制作方法
CN107134496A (zh) * 2016-02-29 2017-09-05 昆山工研院新型平板显示技术中心有限公司 薄膜晶体管及其制造方法、显示面板及显示装置
CN107195643A (zh) * 2017-07-12 2017-09-22 武汉天马微电子有限公司 柔性显示面板及其制作方法、柔性显示装置
CN107622973A (zh) * 2017-08-28 2018-01-23 武汉华星光电半导体显示技术有限公司 Amoled基板的制作方法及amoled基板
CN107681060A (zh) * 2017-09-19 2018-02-09 武汉华星光电半导体显示技术有限公司 一种柔性基板及柔性oled器件
CN108428666A (zh) * 2018-03-29 2018-08-21 深圳市华星光电半导体显示技术有限公司 柔性tft背板的制作方法及柔性tft背板
CN108807484A (zh) * 2018-06-22 2018-11-13 武汉华星光电半导体显示技术有限公司 柔性显示面板及其制造方法
CN109686793A (zh) * 2018-12-24 2019-04-26 合肥鑫晟光电科技有限公司 薄膜晶体管及制备方法、阵列基板、显示装置
CN111430564A (zh) * 2020-03-19 2020-07-17 武汉天马微电子有限公司 一种显示面板以及显示装置
CN112331675A (zh) * 2020-10-30 2021-02-05 昆山国显光电有限公司 一种显示基板及其制作方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102346675B1 (ko) * 2014-10-31 2022-01-04 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조 방법
US10608203B2 (en) * 2015-07-23 2020-03-31 Sharp Kabushiki Kaisha Silicon oxide sealing layer for electroluminescent device
CN107464752A (zh) * 2017-07-18 2017-12-12 武汉华星光电半导体显示技术有限公司 多晶硅薄膜的制备方法、薄膜晶体管阵列基板的制备方法
US20190067338A1 (en) * 2017-08-28 2019-02-28 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Amoled Substrate and Method for Manufacturing Same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040241922A1 (en) * 2003-05-26 2004-12-02 Fuji Photo Film Co., Ltd. Laser annealing method and apparatus
US20060088961A1 (en) * 2004-10-12 2006-04-27 Samsung Electronics Co., Ltd. Method of fabricating poly crystalline silicon TFT
CN102931207A (zh) * 2011-08-10 2013-02-13 三星显示有限公司 显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009033004A (ja) * 2007-07-30 2009-02-12 Fujifilm Corp 薄膜素子とその製造方法、半導体装置
CN101964309B (zh) 2010-09-01 2012-08-01 友达光电股份有限公司 薄膜晶体管的制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040241922A1 (en) * 2003-05-26 2004-12-02 Fuji Photo Film Co., Ltd. Laser annealing method and apparatus
US20060088961A1 (en) * 2004-10-12 2006-04-27 Samsung Electronics Co., Ltd. Method of fabricating poly crystalline silicon TFT
CN102931207A (zh) * 2011-08-10 2013-02-13 三星显示有限公司 显示装置

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104022123B (zh) * 2014-05-16 2016-08-31 京东方科技集团股份有限公司 一种柔性显示基板及其制备方法、柔性显示装置
US10090326B2 (en) 2014-05-16 2018-10-02 Boe Technology Group Co., Ltd. Flexible display substrate and a manufacturing method thereof, as well as a flexible display device
CN104022123A (zh) * 2014-05-16 2014-09-03 京东方科技集团股份有限公司 一种柔性显示基板及其制备方法、柔性显示装置
GB2545360A (en) * 2014-11-03 2017-06-14 Shenzhen China Star Optoelect Amoled back plate manufacturing method
CN104465702A (zh) * 2014-11-03 2015-03-25 深圳市华星光电技术有限公司 Amoled背板的制作方法
CN104465702B (zh) * 2014-11-03 2019-12-10 深圳市华星光电技术有限公司 Amoled背板的制作方法
GB2545360B (en) * 2014-11-03 2019-12-18 Shenzhen China Star Optoelect Method for manufacturing AMOLED backplane
WO2016070505A1 (zh) * 2014-11-03 2016-05-12 深圳市华星光电技术有限公司 Amoled背板的制作方法
WO2016161691A1 (zh) * 2015-04-10 2016-10-13 深圳市华星光电技术有限公司 阵列基板、显示装置及用于制备阵列基板的方法
CN104752489A (zh) * 2015-04-10 2015-07-01 深圳市华星光电技术有限公司 阵列基板、显示装置及用于制备阵列基板的方法
US9887255B2 (en) 2015-04-10 2018-02-06 Shenzhen China Star Optoelectronics Technology Co., Ltd. Array substrate, display device, and method for manufacturing array substrate
CN105118837A (zh) * 2015-09-16 2015-12-02 京东方科技集团股份有限公司 一种柔性基底及其制备方法、显示装置
CN107134496A (zh) * 2016-02-29 2017-09-05 昆山工研院新型平板显示技术中心有限公司 薄膜晶体管及其制造方法、显示面板及显示装置
US10424667B2 (en) 2016-02-29 2019-09-24 Kunshan New Flat Panel Display Technology Center Co., Ltd. Thin film transistor with a protective layer, and manufacturing method therefor, display panel and display apparatus
CN107134496B (zh) * 2016-02-29 2019-05-31 昆山工研院新型平板显示技术中心有限公司 薄膜晶体管及其制造方法、显示面板及显示装置
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CN107068885B (zh) * 2017-04-26 2019-02-15 深圳国冶星光电科技股份有限公司 一种有机发光二极管曲面显示面板、显示装置及制作方法
CN107068885A (zh) * 2017-04-26 2017-08-18 深圳国冶星光电科技股份有限公司 一种有机发光二极管曲面显示面板、显示装置及制作方法
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WO2019041554A1 (zh) * 2017-08-28 2019-03-07 武汉华星光电半导体显示技术有限公司 Amoled基板的制作方法及amoled基板
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US11380796B2 (en) 2018-12-24 2022-07-05 Hefei Xinsheng Optoelectronics Technology Co., Ltd. Top gate thin film transistor, fabricating method thereof, array substrate and display apparatus
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