CN103890234B - The etchant of molybdenum alloy film and indium oxide film - Google Patents
The etchant of molybdenum alloy film and indium oxide film Download PDFInfo
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- CN103890234B CN103890234B CN201280051864.5A CN201280051864A CN103890234B CN 103890234 B CN103890234 B CN 103890234B CN 201280051864 A CN201280051864 A CN 201280051864A CN 103890234 B CN103890234 B CN 103890234B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
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Abstract
The present invention relates to the etchant of a kind of molybdenum alloy film and indium oxide film, especially a kind of for molybdenum alloy film, the etchant of the multiple film of indium oxide film or molybdenum alloy film and indium oxide film, based on integrally combined thing gross weight, it comprises: the hydrogen peroxide of 5% to 25% weight percent, the corrosion inhibitor of 0.1% to 2 weight percent %, the perfluorochemical of 0.1% to 2% weight percent, the perchlorizing compound of 0.1% to 2% weight percent, the hydrogen peroxide stabilizer of 0.1% to 5% weight percent and make the weight percent of integrally combined thing reach the water of 100%. it is an object of the invention to, when the multiple film of the molybdenum alloy film on TFT-LCD pixel electrode, indium oxide film or molybdenum alloy film and indium oxide film is etched, the generation of control precipitate, improve the weather resistance of etching machines, the corrosion to the copper for TFT source electrode and drain electrode can be reduced in maximum degree ground.
Description
Technical field
The present invention relates to a kind of when molybdenum alloy film on TFT-LCD pixel electrode and indium oxide film are etched, in etching engineering, control precipitate generation, it is to increase copper corrosion rejection for the etchant of molybdenum alloy film, indium oxide film or molybdenum alloy film and the multiple film of indium oxide film.
Background technology
On the pixel electrode of the liquid-crystal display such as semiconductor device and TFT-LCD, it may also be useful to single film or the multiple films of molybdenum alloy film and indium oxide film such as molybdenum alloy film, indium oxide film. Described pixel electrode is generally by with the methods such as sputtering long-pending layer on substrate, smear photoresist material thereon evenly, then by being carved with the film of pattern, carry out illumination and penetrate rear imaging, make required patterned photo glue imaging, adopting dry-etching or Wet-type etching, on the metallic membrane of photoresist material bottom after display pattern, a series of photoetching engineerings such as the photoresist material that stripping removal does not need complete.
When using identical etching solution above-mentioned molybdenum alloy film and indium oxide film to be etched, although manufacturing engineering can be simplified, but in general the chemical resistant properties of molybdenum alloy film is good, there is the problem of not easily Wet-type etching; In addition, in order to etch the etching solution of the oxalic acid series that indium oxide film uses, molybdenum alloy film cannot be etched.
In the prior art, No. 2008-0045853rd, Korean Patent Publication, No. 2008-0045854th, Patent Laid, No. 2008-0107502nd, Patent Laid disclose a kind of etching solution, but when using the etching solution of conventional art molybdenum alloy film and indium oxide film to be etched, chemical reaction is there is between etching solution and metallic membrane, precipitate can be generated, the problem such as cause pixel bad. In addition, when lasting use, also there is etching machines engineering time and the low inferior problem of weather resistance. In addition, the corrosion inhibition performance for bottom TFT source electrode and the copper film of drain electrode is also also incomplete, thus part copper mold is corroded, and the problems such as the receipts rate of integral unit is lower occurs.
In order to maximum degree reduce, or even stop can produce between etching solution and molybdenum alloy film and indium oxide film the chemical reaction of precipitate, then need to develop a kind of corrosion inhibition performance improving lower copper film, and for the etching solution of molybdenum alloy film, indium oxide film and molybdenum alloy film and the multiple film of indium oxide film.
Summary of the invention
In order to solve the problems of the technologies described above, it is an object of the invention to provide a kind of when the multiple film of the molybdenum alloy film on TFT-LCD pixel electrode, indium oxide film and molybdenum alloy film and indium oxide film is etched, in etching engineering, the generation of control precipitate, improve the weather resistance of etching machines, can reduce to maximum degree the etchant of the corrosion to the copper for TFT source electrode and drain electrode.
In order to realize foregoing invention object, the present invention for the etchant of molybdenum alloy film, indium oxide film or molybdenum alloy film and the multiple film of indium oxide film, based on integrally combined thing gross weight, comprise: the hydrogen peroxide of 5% to 25% weight percent, the corrosion inhibitor of 0.1% to 2% weight percent, the perfluorochemical of 0.1% to 2% weight percent, the perchlorizing compound of 0.1% to 2% weight percent, the hydrogen peroxide stabilizer of 0.1% to 5% weight percent and make the weight percent of integrally combined thing reach the water of 100%.
The invention has the beneficial effects as follows, the present invention provides and a kind of the multiple film of the molybdenum alloy film on TFT-LCD pixel electrode, indium oxide film and molybdenum alloy film and indium oxide film is carried out etching solution compound for etching, when etching the multiple film of molybdenum alloy film, indium oxide film and molybdenum alloy film and indium oxide film, the generation of precipitate can be controlled, improve the trust of etching engineering and the weather resistance of etching machines of pixel electrode, thus carry out etching engineering stablely. In addition, a small amount of corrosion inhibitor combination can improve the copper corrosion rejection of bottom source electrode and drain electrode.
Accompanying drawing explanation
Fig. 1 is after using the etchant of the embodiment of the present invention 11 to be etched by molybdenum titanium alloy film, it may also be useful to the photo of the substrate surface that sem observation arrives;
Fig. 2 is after using the etchant of the embodiment of the present invention 11 to be etched by indium-tin oxide film, it may also be useful to the photo of the substrate surface that sem observation arrives;
Fig. 3 is after using the etchant of the embodiment of the present invention 11 to be processed by copper/molybdenum alloy film, it may also be useful to the photo of the substrate surface that sem observation arrives;
Fig. 4 is after using the etchant of comparative example 1 of the present invention to be processed by copper/molybdenum alloy film, it may also be useful to the photo of the substrate surface that sem observation arrives;
Fig. 5 is in the etchant of the embodiment of the present invention 11, put into the molybdenum titanium alloy of 1000ppm respectively and indium tin oxide stir after the photo of liquid;
Fig. 6 is in the etchant of comparative example 1 of the present invention, puts into the molybdenum titanium alloy of 1000ppm respectively and after indium tin oxide stirs, generates the photo of the liquid of precipitate.
Embodiment
On TFT-LCD pixel electrode, use the multiple film of the single film such as molybdenum alloy film and indium oxide film or molybdenum alloy film and indium oxide film, the etchant of the present invention can etch molybdenum alloy film, indium oxide film and molybdenum alloy film and the multiple film of indium oxide film formation, adopt identical etchant can etch molybdenum alloy film, indium oxide film and molybdenum alloy film and the multiple film of indium oxide film formation, the summary such as etching machines can be made, also there is advantage in addition that make TFT-LCD manufacturing engineering summary.
Described molybdenum alloy film can be the alloy with various metals, it is preferable to titanium alloy; Described indium oxide film can be preferably indium-tin oxide film (ITO) or indium zinc oxide film (IZO).
The present invention for the etchant of molybdenum alloy film, indium oxide film or molybdenum alloy film and the multiple film of indium oxide film, based on integrally combined thing gross weight, it comprises: the hydrogen peroxide of 5% to 25% weight percent, the corrosion inhibitor of 0.1% to 2% weight percent, the perfluorochemical of 0.1% to 2% weight percent, the perchlorizing compound of 0.1% to 2% weight percent, the hydrogen peroxide stabilizer of 0.1% to 5% weight percent and make the weight percent of integrally combined thing reach the water of 100%.
In the etchant of the present invention, described hydrogen peroxide is the main souring agent of molybdenum alloy. Based on the gross weight of composition, it is preferable to containing the hydrogen peroxide of 5% to 25% weight percent. When hydrogen peroxide is less than 5% weight percent, the acidifying of molybdenum alloy is abundant not, etching cannot be realized; When exceeding 25% weight percent, can cause the lower film to pixel electrode etc. that excessively etching occurs.
Described corrosion inhibitor etches in engineering at pixel electrode, it is possible to prevent from causing copper film to be etched due to pixel electrode and the connection hole of source drain and the fracture of insulating film etc. Described corrosion inhibitor, based on the gross weight of composition, its content is preferably 0.1% to 2% weight percent. During less than 0.1% weight percent, the corrosion inhibition performance of copper film is insufficient, it is difficult to prevent the copper film being used to source electrode and drain electrode to be corroded; When exceeding 2% weight percent, although having remarkable corrosion inhibition performance, but the etching of the multiple film for the molybdenum alloy film of composition pixel electrode, indium oxide film or molybdenum alloy film and indium oxide film, and its etching speed then can be low.
Described corrosion inhibitor can use heterocyclic aromatic compound, heterocyclic aliphatic compound or polyhydroxy-alcohol class etc. Specifically, described heterocyclic aromatic compound can be furans, thiophene, pyrroles, evil azoles, thiazole, imidazoles, pyrazoles, 1,2,4-triazole, tetrazolium, oxygen indenes, thionaphthene, indoles, benzothiazole, benzoglyoxaline, benzo pyrazoles, amino tetrazole, methyl tetrazolium, Methylbenzotriazole, hydrogen Methylbenzotriazole (hydro-tolutriazole) or methylol benzotriazole (hydroxye-tolutriazole); Described heterocyclic aliphatic compound can be piperazine, methylpiperazine, hydroxyethyl piperazine, tetramethyleneimine and tetraoxypyrimidine; Described polyhydroxy-alcohol is the aromatic series polyhydroxy-alcohols such as gallic acid, gallic acid methyl esters, Turkey-galls acetoacetic ester, gallic acid propyl ester, Turkey-galls acid butyl ester, or the linear polyhydroxy-alcohol such as glycerol, erythritol, Sorbitol Powder, mannitol and Xylitol. Described heterocyclic aromatic compound, heterocyclic aliphatic compound or polyhydroxy-alcohol class can use a kind of or two or more compounds simultaneously.
The perfluorochemical of the present invention, for described molybdenum alloy film and indium oxide film, plays the effect of main etching reagent, can improve etching speed, removes residue. Described perfluorochemical, based on the gross weight of composition, its content is preferably 0.1% to 2% weight percent. During less than 0.1% weight percent, etching speed is excessively slow, can produce the residue of molybdenum alloy film and indium oxide film after etching; When exceeding 2% weight percent, excessive etching can be there is to as the insulating film of lower film and the copper film of formation source drain.
The perfluorochemical of the present invention is that dissociation goes out F-Or HF2 -The compound of ion, can be hydrogen fluoride, Sodium Fluoride, Potassium monofluoride, aluminum fluoride, the acid of boron fluorine, Neutral ammonium fluoride, ammonium bifluoride, sodium bifluoride, potassium bifluoride or ammonium borofluoride etc., it is also possible to use one or more above-mentioned fluorochemical simultaneously.
Described perchlorizing compound is possible not only to the generation controlling precipitate, when using together with copper corrosion inhibitor, it is also possible to improve corrosion inhibitor to corrosion inhibition power during copper corrosion. Use the etching solution being made up of hydrogen peroxide, corrosion inhibitor and perfluorochemical, when molybdenum alloy film and indium oxide film are etched, the problem that the precipitate generated causes etching machines weather resistance low cannot be avoided, but when adding described perchlorizing compound, even if molybdenum alloy film and indium oxide film are etched, also can not produce precipitate, there is the effect improving etching machines weather resistance. In addition, when corrosion inhibitor uses together with perfluorochemical, compared with being used alone corrosion inhibitor, it is possible to improve the corrosion inhibition power to copper, thus reduce the consumption of corrosion inhibitor. Described corrosion inhibitor is the one of the main reasons generating precipitate, if the consumption of corrosion inhibitor reduces, is then easier to control the generation of precipitate.
In the present invention, described perchlorizing compound, based on the gross weight of composition, its content is preferably 0.1% to 2% weight percent. During less than 0.1% weight percent, than the generation being easy to control precipitate; When exceeding 2% weight percent, etching speed becomes slow.
Described perchlorizing compound is that dissociation goes out Cl-The compound of ion, it is preferable to hydrogenchloride, sodium-chlor, Repone K, ammonium chloride, iron(ic) chloride or aluminum chloride, it is also possible to simultaneously use one or more above-mentioned muriate.
Described hydrogen peroxide stabilizer, along with repeatedly etching, when the metal ion content processed in number of plies increase and liquid increases, can control the decomposition reaction of hydrogen peroxide, it is to increase the highest point reason number of plies of etching solution. Described hydrogen peroxide stabilizer, based on the gross weight of composition, its content is preferably 0.1% to 5% weight percent, it is more preferable to be 0.1% to 2% weight percent. During less than 0.1% weight percent, cannot effectively suppress the decomposition reaction of hydrogen peroxide; When exceeding 5% weight percent, etching speed is excessively slow.
Described hydrogen peroxide stabilizer can use the sequestrant that metal ion can be made stable.
Described sequestrant is more than one compound optional in the group being made up of iminodiethanoic acid, nitrilotriacetic acid(NTA), ethylenediamine tetraacetic acid (EDTA), diethylene triamine pentacetic acid (DTPA), Amino Trimethylene Phosphonic Acid, 1-hydroxy ethylene-1,1-bisphosphate, quadrol tetramethylene phosphoric acid, diethylenetriamine pentamethylene phosphoric acid, sarkosine, L-Ala, L-glutamic acid, aminobutyric acid and glycine. Described sequestrant also can use glycols compound. Described glycols is more than one compound optional in the group being made up of ethylene glycol, propylene glycol, polyoxyethylene glycol and polypropylene glycol, it is more preferable to for molecular-weight average is the polyoxyethylene glycol of less than 1000. When making spent glycol class as sequestrant, when its molecular weight exceeds 1000, bubble generation can be made to increase, it is not suitable for the etching machines of spray-type.
There is no particular limitation for the water used in the etchant of the present invention, it is preferable to uses deionized water, it is more preferable to is the deionized water using in water the specific impedance value after removing ion to be 18M ��/above.
Utilize the etchant of the present invention, when multiple film pixel electrode as the molybdenum alloy film of pixel electrode, indium oxide film or molybdenum alloy film and indium oxide film is etched, can farthest reduce the corrosion to the copper as bottom source drain, even if using identical etching solution to be etched by two metallic membranes, also seldom there is precipitate, the weather resistance of etching machines and the trust of etching engineering can be improved, thus improve the productivity of TFT-LCD array substrate.
Next, by embodiments of the invention, the present invention will be described in detail, and embodiment is only the content that the present invention is described, the present invention is not by the limitation of embodiment.
Embodiment 1 to 20 and comparative example 1 to 4: the manufacture of etchant
Component content described in following list 1, mixes each composition, makes the composition of the embodiment of the present invention 1 to 20 and comparative example 1 to 4. The component content of following table table 1 is weight percentage the value of %.
Table 1
TAZ: triazole (Triazole)
IDA: iminodiethanoic acid (iminodiaceticacid)
Experimental example: the etching performance test of etchant
In order to evaluate the effect of etching solution of the present invention, depositing the thickness as molybdenum alloy film on the glass substrate respectively isMolybdenum titanium alloy film, as the thickness of indium oxide film beIndium-tin oxide film and thickness as copper-molybdenum alloy film beMolybdenum titanium alloy film and thickness beCopper film, then carry out photoetching engineering, make the test piece of patterning.
The etchant being etched in etchant and the comparative example 1 to 3 utilizing embodiment 1 to 20, carries out on the device (Mini-etcherME-001) that can spray. Utilize residue that molybdenum alloy film and indium oxide film produce by scanning electronic microscope (group of Hitachi manufacture, S-4800) after etching, the corrosion etc. of copper film observe, its result is as shown in table 2. Fig. 1 to Fig. 3 is after using the etchant of the embodiment of the present invention 11 molybdenum titanium alloy film, indium-tin oxide film, copper/molybdenum alloy film to be processed, it may also be useful to the photo of the substrate surface that sem observation arrives. Fig. 4 is after using the etchant of comparative example 1 of the present invention to be processed by copper/molybdenum alloy film, it may also be useful to the photo of the substrate surface that sem observation arrives.
As shown in Figure 1, the etchant of embodiments of the invention 11 is remarkable to the etching characteristic of molybdenum titanium alloy film, and molybdenum titanium alloy film does not have residue to occur. As shown in Figure 2, the etchant of embodiments of the invention 11 is remarkable to the etching characteristic of indium-tin oxide film (ITO), and indium-tin oxide film does not have residue to occur. As shown in Figure 3, copper/molybdenum alloy film does not corrode because of etchant. As shown in Figure 4, copper/molybdenum alloy film is not because etchant corrodes.
In addition, in order to confirm whether molybdenum alloy film and indium oxide film can produce precipitate after etching repeatedly, etchant drops into molybdenum titanium alloy powder and the indium tin oxide powder of 1000ppm respectively, carries out the stirring of 12 hours, being confirmed whether to generate precipitate, its result is as shown in table 2. Fig. 5 and Fig. 6 is in the etchant of the embodiment of the present invention 11 and comparative example 1, put into the molybdenum titanium alloy of 1000ppm respectively and indium tin oxide stir after the photo of liquid.
As shown in Figure 5, precipitate between the etchant of the embodiment of the present invention 11 and molybdenum alloy film and indium oxide film reaches minimized or does not occur; On the contrary, as shown in Figure 6, between the etchant of comparative example 1 of the present invention and molybdenum alloy film and indium oxide film, there is precipitate because of chemical reaction.
Table 2
Test result mark benchmark:
X: occur without residue, without copper erosion, sediment-free
O: have residue to occur, has copper erosion, has throw out
As shown in Table 2, it may also be useful to the etchant of the embodiment of the present invention 1 to 20, without the residue of molybdenum alloy film and indium oxide film, without the corrosion of copper film. In addition, even if also demonstrating, molybdenum alloy film and indium oxide film being etched repeatedly, also can not generate the good result of precipitate.
On the contrary, it may also be useful to after molybdenum alloy film and indium oxide film are etched by the etchant of comparative example 1 to 3, although there is not residue, but copper film is corroded, and generates precipitate, it is very difficult to be applicable to engineering. In addition, the etchant of comparative example 4, after molybdenum alloy film and indium oxide film being etched, produces residue, the corrosion of concurrent pig copper film, generates precipitate, it is difficult to be applicable to engineering.
From the above results, etch be used for the molybdenum alloy film of pixel electrode and indium oxide film time, it may also be useful to during the etchant of the present invention, it is possible to the generation of control precipitate, etching machines is not damaged, it is possible to maximum degree ground reduces the corrosion to bottom source drain copper.
Industry utilizes feasibility
The present invention provides and a kind of the multiple film of the molybdenum alloy film on TFT-LCD pixel electrode, indium oxide film and molybdenum alloy film and indium oxide film is carried out etching solution compound for etching, when etching the multiple film of molybdenum alloy film, indium oxide film and molybdenum alloy film and indium oxide film, the generation of precipitate can be controlled, improve the trust of etching engineering and the weather resistance of etching machines of pixel electrode, thus carry out etching engineering stablely. In addition, a small amount of corrosion inhibitor combination can improve the copper corrosion rejection of bottom source electrode and drain electrode.
Claims (7)
1. one kind for the etchant of molybdenum alloy film, indium oxide film or molybdenum alloy film and the multiple film of indium oxide film, it is characterized in that, based on integrally combined thing gross weight, comprise: the hydrogen peroxide of 5% to 25% weight percent, the corrosion inhibitor of 0.1% to 2% weight percent, the perfluorochemical of 0.1% to 2% weight percent, the perchlorizing compound of 0.1% to 2% weight percent, the hydrogen peroxide stabilizer of 0.1% to 5% weight percent and make the weight percent of integrally combined thing reach the water of 100%;
Described perchlorizing compound is sodium-chlor and/or iron(ic) chloride;
Described corrosion inhibitor is at least one compound in heterocyclic aromatic compound, heterocyclic aliphatic compound and polyhydroxy-alcohol class.
2. according to claim 1 for the etchant of molybdenum alloy film, indium oxide film or molybdenum alloy film and the multiple film of indium oxide film, it is characterized in that, described perfluorochemical is at least one in hydrogen fluoride, Sodium Fluoride, Potassium monofluoride, aluminum fluoride, the acid of boron fluorine, Neutral ammonium fluoride, ammonium bifluoride, sodium bifluoride, potassium bifluoride and ammonium borofluoride.
3. according to claim 1 for the etchant of molybdenum alloy film, indium oxide film or molybdenum alloy film and the multiple film of indium oxide film, it is characterised in that, described hydrogen peroxide stabilizer is more than one compound optional in sequestrant.
4. according to claim 1 for the etchant of molybdenum alloy film, indium oxide film or molybdenum alloy film and the multiple film of indium oxide film, it is characterized in that, described heterocyclic aromatic compound is furans, thiophene, pyrroles, evil azoles, thiazole, imidazoles, pyrazoles, 1, at least one in 2,4-triazole, tetrazolium, oxygen indenes, thionaphthene, indoles, benzothiazole, benzoglyoxaline, benzo pyrazoles, amino tetrazole, methyl tetrazolium, Methylbenzotriazole, hydrogen Methylbenzotriazole, methylol benzotriazole;Described heterocyclic aliphatic compound is at least one in piperazine, methylpiperazine, hydroxyethyl piperazine, tetramethyleneimine and tetraoxypyrimidine;
Described polyhydroxy-alcohol is at least one in gallic acid, gallic acid methyl esters, Turkey-galls acetoacetic ester, gallic acid propyl ester, Turkey-galls acid butyl ester, glycerol, erythritol, Sorbitol Powder, mannitol and Xylitol.
5. according to claim 3 for the etchant of molybdenum alloy film, indium oxide film or molybdenum alloy film and the multiple film of indium oxide film, it is characterized in that, described sequestrant is at least one in iminodiethanoic acid, nitrilotriacetic acid(NTA), ethylenediamine tetraacetic acid (EDTA), diethylene triamine pentacetic acid (DTPA), Amino Trimethylene Phosphonic Acid, 1-hydroxy ethylene-1,1-bisphosphate, quadrol tetramethylene phosphoric acid, diethylenetriamine pentamethylene phosphoric acid, sarkosine, L-Ala, L-glutamic acid, aminobutyric acid and glycine; Or described sequestrant is selected from glycols; Described glycols is at least one in ethylene glycol, propylene glycol, polyoxyethylene glycol and polypropylene glycol.
6. according to claim 5 for the etchant of molybdenum alloy film, indium oxide film or molybdenum alloy film and the multiple film of indium oxide film, it is characterised in that, described glycols is molecular-weight average is the polyoxyethylene glycol of less than 1000.
7. according to claim 1 for the etchant of molybdenum alloy film, indium oxide film or molybdenum alloy film and the multiple film of indium oxide film, it is characterised in that, described indium oxide film is indium-tin oxide film or indium zinc oxide film.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2011-0120442 | 2011-11-17 | ||
| KR1020110120442A KR101349975B1 (en) | 2011-11-17 | 2011-11-17 | Etchant composition for molybdenium alloy layer and indium oxide layer |
| PCT/KR2012/009340 WO2013073793A1 (en) | 2011-11-17 | 2012-11-07 | Molybdenum-alloy-film and indium-oxide-film etching-solution composition |
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| CN103890234A CN103890234A (en) | 2014-06-25 |
| CN103890234B true CN103890234B (en) | 2016-06-08 |
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| CN201280051864.5A Active CN103890234B (en) | 2011-11-17 | 2012-11-07 | The etchant of molybdenum alloy film and indium oxide film |
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| KR (1) | KR101349975B1 (en) |
| CN (1) | CN103890234B (en) |
| WO (1) | WO2013073793A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI640655B (en) * | 2013-12-23 | 2018-11-11 | 韓商東友精細化工有限公司 | Method of preparing array of thin film transistor and etchant composition for molybdenum-based metal film/metal oxide film |
| KR102209680B1 (en) * | 2014-06-27 | 2021-01-29 | 동우 화인켐 주식회사 | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
| CN105220154B (en) * | 2014-06-27 | 2018-05-11 | 日照旭日电子有限公司 | The removing process of tinning or electrotinning on a kind of copper or Ni-based material |
| KR102209423B1 (en) * | 2014-06-27 | 2021-01-29 | 동우 화인켐 주식회사 | Etching solution composition for metal layer and manufacturing method of an array substrate for liquid crystal display using the same |
| KR102209685B1 (en) * | 2014-06-30 | 2021-01-29 | 동우 화인켐 주식회사 | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
| KR20160001985A (en) * | 2014-06-30 | 2016-01-07 | 동우 화인켐 주식회사 | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
| KR101609114B1 (en) | 2014-10-08 | 2016-04-20 | 주식회사 이엔에프테크놀로지 | Etching composition for patterned metal layer |
| KR102265897B1 (en) * | 2015-03-20 | 2021-06-16 | 동우 화인켐 주식회사 | Etching solution composition for molybdenum-containing layer and manufacturing method of an array substrate for liquid crystal display using the same |
| KR102468320B1 (en) * | 2015-08-04 | 2022-11-18 | 동우 화인켐 주식회사 | Etching composition for metal layer |
| WO2017164090A1 (en) * | 2016-03-24 | 2017-09-28 | 株式会社Adeka | Etching liquid composition and etching method |
| KR102367814B1 (en) * | 2016-03-30 | 2022-02-25 | 동우 화인켐 주식회사 | Etching solution composition for molybdenum-containing layer and manufacturing method of an array substrate for liquid crystal display using the same |
| CN107587135A (en) * | 2016-07-08 | 2018-01-16 | 深圳新宙邦科技股份有限公司 | A kind of molybdenum aluminium-molybdenum etching liquid |
| CN106086891B (en) * | 2016-08-11 | 2018-10-26 | 江阴江化微电子材料股份有限公司 | A kind of advanced lines tablet copper titanium film acidic etching liquid |
| CN112663064A (en) * | 2020-12-16 | 2021-04-16 | 江苏艾森半导体材料股份有限公司 | Copper-molybdenum metal etching solution and preparation method and application thereof |
| CN114929836B (en) * | 2021-12-07 | 2023-06-27 | 晶瑞电子材料股份有限公司 | Buffer etching solution for non-metal oxide film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102177219A (en) * | 2008-11-12 | 2011-09-07 | 韩国泰科诺赛美材料株式会社 | Etching solution for a transparent conductive film |
| KR20110113902A (en) * | 2010-04-12 | 2011-10-19 | 솔브레인 주식회사 | Etchant for thin film transistor-liquid crystal display |
Family Cites Families (2)
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| TW200908148A (en) * | 2007-03-31 | 2009-02-16 | Advanced Tech Materials | Methods for stripping material for wafer reclamation |
| KR20100040010A (en) * | 2008-10-09 | 2010-04-19 | (주)이그잭스 | Echant with low concentration of hydrogen peroxide for layers of copper or copper alloy |
-
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| CN102177219A (en) * | 2008-11-12 | 2011-09-07 | 韩国泰科诺赛美材料株式会社 | Etching solution for a transparent conductive film |
| KR20110113902A (en) * | 2010-04-12 | 2011-10-19 | 솔브레인 주식회사 | Etchant for thin film transistor-liquid crystal display |
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| KR20130054826A (en) | 2013-05-27 |
| WO2013073793A1 (en) | 2013-05-23 |
| CN103890234A (en) | 2014-06-25 |
| KR101349975B1 (en) | 2014-01-15 |
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