CN107988598A - The manufacture method of etchant and array substrate for display device - Google Patents
The manufacture method of etchant and array substrate for display device Download PDFInfo
- Publication number
- CN107988598A CN107988598A CN201711262782.6A CN201711262782A CN107988598A CN 107988598 A CN107988598 A CN 107988598A CN 201711262782 A CN201711262782 A CN 201711262782A CN 107988598 A CN107988598 A CN 107988598A
- Authority
- CN
- China
- Prior art keywords
- weight
- etchant
- film
- metal
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 74
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 150000001875 compounds Chemical class 0.000 claims abstract description 40
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 31
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims abstract description 29
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 27
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims abstract description 26
- 239000010452 phosphate Substances 0.000 claims abstract description 26
- 239000000203 mixture Substances 0.000 claims abstract description 21
- 150000002222 fluorine compounds Chemical class 0.000 claims abstract description 17
- 239000003513 alkali Substances 0.000 claims abstract description 16
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 16
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 16
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 16
- 229920005862 polyol Polymers 0.000 claims abstract description 16
- 150000003077 polyols Chemical class 0.000 claims abstract description 16
- 150000003851 azoles Chemical class 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 130
- 239000010949 copper Substances 0.000 claims description 57
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 46
- 229910052802 copper Inorganic materials 0.000 claims description 43
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 26
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 13
- 239000011733 molybdenum Substances 0.000 claims description 13
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 11
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 7
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 7
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 6
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 6
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002585 base Substances 0.000 claims description 5
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 5
- -1 imidazole compound Chemical class 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 4
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 4
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 4
- 229910052939 potassium sulfate Inorganic materials 0.000 claims description 4
- 235000011151 potassium sulphates Nutrition 0.000 claims description 4
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 4
- 235000011152 sodium sulphate Nutrition 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000004471 Glycine Substances 0.000 claims description 3
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- 235000004279 alanine Nutrition 0.000 claims description 3
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims description 3
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 claims description 3
- 235000013922 glutamic acid Nutrition 0.000 claims description 3
- 239000004220 glutamic acid Substances 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- 229910000403 monosodium phosphate Inorganic materials 0.000 claims description 3
- 235000019799 monosodium phosphate Nutrition 0.000 claims description 3
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 150000003233 pyrroles Chemical class 0.000 claims description 3
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 claims description 3
- 229910000597 tin-copper alloy Inorganic materials 0.000 claims description 3
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 2
- 229910004039 HBF4 Inorganic materials 0.000 claims description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 2
- 229910017971 NH4BF4 Inorganic materials 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 2
- 150000002475 indoles Chemical class 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- CHKVPAROMQMJNQ-UHFFFAOYSA-M potassium bisulfate Chemical compound [K+].OS([O-])(=O)=O CHKVPAROMQMJNQ-UHFFFAOYSA-M 0.000 claims description 2
- 229910000343 potassium bisulfate Inorganic materials 0.000 claims description 2
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 claims description 2
- 150000003217 pyrazoles Chemical class 0.000 claims description 2
- 150000003235 pyrrolidines Chemical class 0.000 claims description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims 2
- RSEBUVRVKCANEP-UHFFFAOYSA-N 2-pyrroline Chemical compound C1CC=CN1 RSEBUVRVKCANEP-UHFFFAOYSA-N 0.000 claims 1
- 229940124277 aminobutyric acid Drugs 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 claims 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims 1
- 239000004094 surface-active agent Substances 0.000 claims 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 5
- 229910001431 copper ion Inorganic materials 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 2
- 235000011130 ammonium sulphate Nutrition 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 2
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 150000003852 triazoles Chemical class 0.000 description 2
- NCPXQVVMIXIKTN-UHFFFAOYSA-N trisodium;phosphite Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])[O-] NCPXQVVMIXIKTN-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JXVUGCOVHSDWIS-UHFFFAOYSA-N 2,3-dihydro-1H-pyrrole quinoline Chemical compound N1C=CCC1.N1=CC=CC2=CC=CC=C12 JXVUGCOVHSDWIS-UHFFFAOYSA-N 0.000 description 1
- IOQLGFCIMRCCNA-UHFFFAOYSA-N 2-(carboxymethylamino)acetic acid Chemical compound OC(=O)CNCC(O)=O.OC(=O)CNCC(O)=O IOQLGFCIMRCCNA-UHFFFAOYSA-N 0.000 description 1
- GBIBYNIYVUFTIT-UHFFFAOYSA-N 2-[bis(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O.OC(=O)CN(CC(O)=O)CC(O)=O GBIBYNIYVUFTIT-UHFFFAOYSA-N 0.000 description 1
- LPMKADABKPYRHE-UHFFFAOYSA-N 2-aminobutanoic acid Chemical compound CCC(N)C(O)=O.CCC(N)C(O)=O LPMKADABKPYRHE-UHFFFAOYSA-N 0.000 description 1
- YMVDTXSRLFAIKI-UHFFFAOYSA-N 7h-purine Chemical compound C1=NC=C2NC=NC2=N1.C1=NC=C2NC=NC2=N1 YMVDTXSRLFAIKI-UHFFFAOYSA-N 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101000601610 Drosophila melanogaster Heparan sulfate N-sulfotransferase Proteins 0.000 description 1
- XEUCQOBUZPQUMQ-UHFFFAOYSA-N Glycolone Chemical compound COC1=C(CC=C(C)C)C(=O)NC2=C1C=CC=C2OC XEUCQOBUZPQUMQ-UHFFFAOYSA-N 0.000 description 1
- UWIULCYKVGIOPW-UHFFFAOYSA-N Glycolone Natural products CCOC1=C(CC=CC)C(=O)N(C)c2c(O)cccc12 UWIULCYKVGIOPW-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 108010077895 Sarcosine Proteins 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 235000019797 dipotassium phosphate Nutrition 0.000 description 1
- 229910000396 dipotassium phosphate Inorganic materials 0.000 description 1
- 229910000397 disodium phosphate Inorganic materials 0.000 description 1
- 235000019800 disodium phosphate Nutrition 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-M hydrogensulfate Chemical compound OS([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-M 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 description 1
- 230000003244 pro-oxidative effect Effects 0.000 description 1
- BXEMXLDMNMKWPV-UHFFFAOYSA-N pyridine Chemical compound C1=CC=NC=C1.C1=CC=NC=C1 BXEMXLDMNMKWPV-UHFFFAOYSA-N 0.000 description 1
- YMXFJTUQQVLJEN-UHFFFAOYSA-N pyrimidine Chemical compound C1=CN=CN=C1.C1=CN=CN=C1 YMXFJTUQQVLJEN-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- WBHQBSYUUJJSRZ-UHFFFAOYSA-M sodium bisulfate Chemical compound [Na+].OS([O-])(=O)=O WBHQBSYUUJJSRZ-UHFFFAOYSA-M 0.000 description 1
- 229910000342 sodium bisulfate Inorganic materials 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 235000011008 sodium phosphates Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 125000003831 tetrazolyl group Chemical group 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention relates to etchant, the manufacture method of array substrate for display device and array substrate for display device, more specifically, there is provided when manufacturing array substrate for display device, metal film can be etched in the lump, the etchant of metal film, the manufacture method of array substrate for display device and the array substrate for display device of the excellent characteristic of the etching outline of interface portion when there is etching speed, cone angle excellent and etching multilayer film.The etchant of the metal film is characterized in that, relative to composition total weight, comprising:5~25 weight % of hydrogen peroxide, 0.01~1 weight % of fluorine compounds, 0.1~5 weight % of azole compounds, intramolecular have the water of 0.1~5 weight % of water soluble compound of nitrogen-atoms and carboxyl, 0.001~5 weight % of phosphate comprising alkali or alkaline earth metal, 0.01~5 weight % of EPE polyol EPE, 0.1~5 weight % of sulfate comprising alkali or alkaline earth metal and surplus, and the weight ratio of phosphate and sulfate is 1:3~1:20.
Description
Technical field
The present invention relates to the manufacture method of etchant and array substrate for display device.
Background technology
In semiconductor device, on substrate formed metal wiring process generally include to utilize following process the step of:Profit
With the metal film formation process of sputtering etc.;It is coated with using photoresist, is in exposed and developed selective area photic anti-
Lose agent formation process;And etching work procedure, and it is included in cleaning process before and after Individual cells process etc..Such etching work procedure
Refer to, using photoresist as mask, the process that metal film is left in selective area is usually used to utilize plasma
Deng dry-etching or using etchant Wet-type etching.
In such semiconductor device, the resistance of metal wiring is primarily upon in recent years.This is because resistance is to induce RC
The principal element of signal delay, particularly in Thin Film Transistor-LCD (thin film transistor-liquid
Crystal display, TFT-LCD) in the case of, the increase of panel size and high-resolution realization are increasingly becoming technological development
Key.Therefore, in order to realize subtracting for necessary RC signal delays in the maximization of the display device including TFT-LCD etc.
It is few, it is necessary to develop low resistance material.Therefore, actual conditions are to lead chromium (Cr, resistivity to be used in the past:12.7×10-8Ω
M), molybdenum (Mo, resistivity:5×10-8Ω m), aluminium (Al, resistivity:2.65×10-8Ω m) and their alloy be difficult to use in greatly
Gate wirings and data wiring used in the display devices such as type TFT-LCD etc..
In this context, as new low resistive metal film, the copper system metal film such as copper film and copper-molybdenum film is paid high attention to
And its etchant, and this is actively studied.For example, in KR published patent the 2010-0090538th
Disclose has nitrogen-atoms comprising hydrogen peroxide, organic acid, phosphate compounds, water-soluble cyclic amine compound, an intramolecular
The etching solution group of the copper system metal film of water soluble compound, fluorochemical, EPE polyol EPE and water with carboxyl
Compound.However, for above-mentioned etching solution, deposited in terms of the cone angle maintenance that number ongoing change is handled in etching of thick film metal layer
Limiting to, interface portion produces the problem of corroding when having etching multilayer film.
Prior art literature
Patent document
Patent document 1:KR published patent the 2010-0090538th
The content of the invention
Problem to be solved
It is an object of the present invention to provide metal film etching speed and cone angle excellent and when etching multilayer film
There is no the erosion of interface portion and etching outline is excellent, will not produce the etchant of the metal film of residue.
The method for solving problem
To achieve these goals, the present invention provides a kind of etchant of metal film, it is characterised in that relative to
Composition total weight, comprising:5~25 weight % of hydrogen peroxide, 0.01~1 weight % of fluorine compounds, azole compounds 0.1~5
Weight %, an intramolecular have 0.1~5 weight % of water soluble compound of nitrogen-atoms and carboxyl, include alkali metal or alkaline earth
0.001~5 weight % of phosphate of metal, 0.01~5 weight % of EPE polyol EPE, include alkali metal or alkaline earth gold
0.1~5 weight % of sulfate of category and the water of surplus,
The weight ratio of above-mentioned phosphate and sulfate is 1:3~1:20.
In one embodiment, above-mentioned metal film can be copper system metal film.
In another embodiment, above-mentioned copper system metal film can be the monofilm of copper or copper alloy or be multilayer film, institute
State multilayer film and include the film selected from one or more of the group being made of molybdenum film, molybdenum alloy film, titanium film and titanium alloy film, Yi Jixuan
From the film of one or more of copper film and tin-copper alloy film.
In addition, the present invention provides a kind of manufacture method of array substrate for display device, it is characterised in that including:A) exist
On substrate formed gate wirings the step of, b) on the substrate comprising above-mentioned gate wirings formed gate insulator the step of, c)
On above-mentioned gate insulator formed semiconductor layer the step of, d) on above-mentioned semiconductor layer formed source electrode and drain electrode step
Suddenly the step of and e) forming the pixel electrode being connected with above-mentioned drain electrode,
Above-mentioned a) step or d) at least one step in step be included on aforesaid substrate be laminated metal layer the step of, with
And the step of being etched using etchant,
Above-mentioned etchant is included relative to composition total weight:5~25 weight % of hydrogen peroxide, fluorine compounds
0.01~1 weight %, 0.1~5 weight % of azole compounds, an intramolecular have the water soluble compound of nitrogen-atoms and carboxyl
0.1~5 weight %, 0.001~5 weight % of phosphate, EPE polyol EPE comprising alkali or alkaline earth metal
The water of 0.01~5 weight %, 0.1~5 weight % of sulfate comprising alkali or alkaline earth metal and surplus,
The weight ratio of above-mentioned phosphate and sulfate is 1:3~1:20.
Above-mentioned metal layer can be the metal layer comprising copper or copper alloy.
In addition, the present invention provides a kind of array substrate for display device, it includes the etching solution group using above-mentioned metal film
Compound etches one or more of the gate wirings formed, source electrode and drain electrode.
Invention effect
The etchant of the present invention is capable of providing following effect:, can when manufacturing array substrate for display device
Interface when metal film is etched in the lump, cone angle, the lateral erosion variable quantity excellent with processing substrate number, and etch multilayer film
The etching outline in portion is excellent.
Brief description of the drawings
Fig. 1 be evaluation using embodiment 1 etchant etching Cu/MoNb duplicatures after (a) etching section,
(b) SEM photograph that etching outline and residue the presence or absence of produce.
Fig. 2 is invaded for generation interface portion after confirming the etchant etching Cu/MoNb duplicatures using comparative example 4
The SEM photograph of erosion.
Fig. 3 is for producing residue after confirming the etchant etching Cu/MoNb duplicatures using comparative example 6
SEM photograph.
Embodiment
The display device of etchant the present invention relates to metal film and the etchant using the metal film
With the manufacture method of array base palte.
The present inventor in order to provide have etch metal film when etching speed and cone angle it is excellent and etching multilayer
There is no interface portion to corrode during film during the etchant of the excellent effect of etching outline is furtherd investigate, confirm
To containing the water that hydrogen peroxide, fluorine compounds, azole compounds, intramolecular have nitrogen-atoms and carboxyl with certain content
Soluble compound, phosphate, EPE polyol EPE, sulfate and water and with the weight ratio in particular range include it is above-mentioned
In the case of phosphate and sulfate, there can be the effect above, so as to complete the present invention.
Hereinafter, the present invention will be described in detail.
The present invention provides a kind of etchant of metal film, it is characterised in that relative to composition total weight, bag
Contain:5~25 weight % of hydrogen peroxide, 0.01~1 weight % of fluorine compounds, 0.1~5 weight % of azole compounds, a molecule
Interior 0.1~5 weight % of water soluble compound, the phosphate comprising alkali or alkaline earth metal with nitrogen-atoms and carboxyl
0.001~5 weight %, 0.01~5 weight % of EPE polyol EPE, the sulfate comprising alkali or alkaline earth metal
The water of 0.1~5 weight % and surplus,
The weight ratio of above-mentioned phosphate and sulfate is 1:3~1:20.It is highly preferred that contained above-mentioned phosphate and sulfuric acid
The weight ratio of salt can be 1:5~1:10.
In the case where the weight ratio of above-mentioned phosphate and sulfate is in above range, can realize excellent cone angle and
The etching speed of metal film.
It is less than 1 in the weight ratio of the phosphate in terms of said reference and sulfate:In the case of 3, etching speed is insufficient and nothing
Method realizes sufficiently etching, it is possible to create the problem of cone angle becomes larger, more than 1:In the case of 20, etching speed is too fast and is not easy
Control process, and more than 55 ° to produce etching outline bad for cone angle.
In the present invention, above-mentioned metal film can be copper system metal film, and above-mentioned copper system metal film wraps in the constituent of film
Cupric, can be the concept of the monofilm and multilayer film that include copper or copper alloy, and the multilayer film is included to be closed selected from copper film and copper
The film of one or more of golden film and in the group being made of molybdenum film, molybdenum alloy film, titanium film and titanium alloy film it is a kind of with
On film.
In addition, the concept of above-mentioned so-called alloy film further includes nitride film or oxide-film.
As the example of above-mentioned multilayer film, copper/molybdenum film, copper/molybdenum alloy film, copper alloy/molybdenum alloy film, copper/titanium can be enumerated
The duplicatures such as film or trilamellar membrane.Above-mentioned copper/molybdenum film means the layers of copper formed comprising molybdenum layer and on above-mentioned molybdenum layer, on
State copper/molybdenum alloy film and mean the layers of copper formed comprising Mo alloy and on above-mentioned Mo alloy, copper alloy/molybdenum alloy film
Mean the copper alloy layer formed comprising Mo alloy and on above-mentioned Mo alloy, above-mentioned copper/titanium film, which is meant, to be included
Titanium layer and the layers of copper formed on above-mentioned titanium layer.
Above-mentioned copper alloy layer refers to the layer formed by the alloy of following metal and copper, and the metal is selected from by such as aluminium
(Al), magnesium (Mg), calcium (Ca), titanium (Ti), silver-colored (Ag), chromium (Cr), manganese (Mn), iron (Fe), zirconium (Zr), niobium (Nb), molybdenum (Mo), palladium
(Pd), one or more of group of composition such as hafnium (Hf), tantalum (Ta) and tungsten (W).
Above-mentioned Mo alloy refers to the layer formed by the alloy of following metal and molybdenum, and the metal is selected from by such as titanium
(Ti), one or more of group of composition such as niobium (Nb), tungsten (W), tantalum (Ta), chromium (Cr), nickel (Ni), neodymium (Nd) and indium (In).
Particularly, etchant of the invention is preferably applied to be formed by copper or tin-copper alloy film and molybdenum or molybdenum alloy film
Multilayer film, above-mentioned multilayer film can be etched in the lump.
Hereinafter, the composition for the etchant that the present invention will be described in detail.
Hydrogen peroxide
Hydrogen peroxide (H included in the etchant of the present invention2O2) it is that etching to copper system metal film produces shadow
Loud primary oxidant, above-mentioned copper system metal film can include the copper metal film formed on molybdenum alloy film and above-mentioned molybdenum alloy film.
Above-mentioned hydrogen peroxide (H2O2) be characterized in that, relative to composition total weight, its content is 5~25 weight %, more
Preferably 17~23 weight %.In the case where content is less than 5 weight % in terms of said reference, it is possible to occur because of copper system metal
The etch capabilities of film and/or molybdenum alloy film deficiency and the problem of can not realize sufficient etching.On the other hand, in content more than 25
In the case of weight %, etching speed integrally accelerates, therefore, it is difficult to control process, based on the increased fever of copper ion in composition
Stability may substantially reduce.
Fluorine compounds
Fluorine compounds included in the etchant of the present invention are to refer to dissociate in water and discharge fluorine ion
(F-) compound.Above-mentioned fluorine compounds are the pro-oxidants that influence is played on the etching speed of molybdenum alloy film, adjust molybdenum alloy
The etching speed of film.
In addition, play the effect for removing the residue necessarily led in the solution of etching and molybdenum film at the same time.
Above-mentioned fluorine compounds are characterized in that, relative to the composition total weight of the present invention, its content is 0.01~1 weight
Measure %, more preferably 0.05~0.2 weight %., may in the case where the content of above-mentioned fluorine compounds is less than 0.01 weight %
Produce the etch residue of metal film.On the other hand, in the case where content is more than 1 weight %, there are the change of glass substrate etching rate
The shortcomings that big.
Above-mentioned fluorine compounds are the fluorine compounds used in the art, as long as fluorine ion can be dissociateed in the solution
Or the compound of polyatom fluorine ion, just it is not particularly limited.As the preferable concrete example of above-mentioned fluorine compounds, can enumerate
HF、NaF、NH4F、NH4BF4、NH4FHF、KF、KHF2、AlF3And HBF4Deng, preferably using selected from it is therein more than one.
Azole compounds
The present invention etchant included in azole compounds play adjust copper system metal film etching speed,
Reduce the CD losses (CD Loss) of pattern and improve the effect of the surplus in process.
Above-mentioned azole compounds are characterized in that, relative to composition total weight, its content is 0.1~5 weight %, more excellent
Elect 0.3~0.8 weight % as.In the case where the content of the azole compounds in terms of said reference is less than 0.1 weight %, copper film etc.
The etching speed of metal film is too fast and there may be excessive CD losses.On the other hand, in the case of more than 5 weight %, copper film
Excessively slow and molybdenum alloy film the etching speed of etching speed Deng metal film is relatively excessively slow, thus the loss of activity time occurs, residual
Staying the possibility of the residue of molybdenum alloy increases.
As long as above-mentioned azole compounds azole compounds usually used in this field are just not particularly limited, but can be with
The more preferably azole compounds of carbon number 1~30.It can more preferably use selected from triazole (triazole) based compound, ammonia
Base tetrazolium (aminotetrazole) based compound, imidazoles (imidazole) based compound, indoles (indole) based compound,
Purine (purine) based compound, pyrazoles (pyrazol) based compound, pyridine (pyridine) based compound, pyrimidine
(pyrimidine) based compound, pyrroles (pyrrole) based compound, pyrrolidines (pyrrolidine) based compound and pyrroles
One or more of quinoline (pyrroline) based compound etc. compound.
One intramolecular has the water soluble compound of nitrogen-atoms and carboxyl
An intramolecular has the water-soluble chemical combination of nitrogen-atoms and carboxyl included in the etchant of the present invention
Thing prevents the selfdecomposition for the hydrogen peroxide that may occur during keeping etchant, and is etched to substantial amounts of substrate
When prevent etching characteristic from changing.In general, using hydrogen peroxide etchant in the case of, keeping when by
In hydrogen peroxide generation selfdecomposition, its storage time is not grown, and also tool is there is a possibility that the hazards of container explosion.But wrapping
In the case that intramolecular containing said one has the water soluble compound of nitrogen-atoms and carboxyl, the decomposition rate of hydrogen peroxide reduces
Nearly 10 times, so that it is advantageously ensured that storage time and stability.
Particularly, in the case of layers of copper, when copper ion is largely remained in etchant, may relatively mostly occur shape
Into the situation for being passivated (passivation) film and being no longer etched after oxidizing blackening, but in the case where adding above-claimed cpd,
It can prevent this phenomenon.
The water soluble compound that said one intramolecular has nitrogen-atoms and carboxyl is characterized in that, relative to the present invention's
Composition total weight, its content are 0.1~5 weight %, more preferably 1.5~3.0 weight %.Have in said one intramolecular
In the case that the content of the water soluble compound of nitrogen-atoms and carboxyl is less than 0.1 weight %, substantial amounts of substrate (about 500) is etched
After can form passivating film and be difficult to obtain sufficient operation allowance.On the other hand, said one intramolecular have nitrogen-atoms and
In the case that the content of the water soluble compound of carboxyl is more than 5 weight %, the etching speed of molybdenum or molybdenum alloy is slack-off, it is thus possible to
The problem of generation etching copper-molybdenum film or the cone angle of copper-molybdenum alloy film diminish.
There is the concrete example of the water soluble compound of nitrogen-atoms and carboxyl as said one intramolecular, alanine can be enumerated
(alanine), aminobutyric acid (aminobutyric acid), glutamic acid (glutamic acid), glycine (glycine),
Iminodiacetic acid (iminodiacetic acid), nitrilotriacetic acid (nitrilotriacetic acid) and methyl amimoacetic acid
(sarcosine) etc., can use selected from it is therein more than one.
Phosphate comprising alkali or alkaline earth metal
Phosphate (- PO included in the etchant of the present invention4 3-) play and make cone angle profile and the etching of pattern
The good effect of profile.
Above-mentioned the phosphate (- PO comprising alkali or alkaline earth metal4 3-) it is one or two hydrogen in phosphoric acid by alkali metal
Or the phosphate that alkaline-earth metal displacement forms, as concrete example, sodium dihydrogen phosphate (sodium phosphate can be enumerated
Monobasic), potassium dihydrogen phosphate (potassium phosphate monobasic), disodium hydrogen phosphate (sodium
Phosphate dibasic) and dipotassium hydrogen phosphate (potassium phosphate dibasic) etc., it can use and be selected from it
One or more of.
It is above-mentioned it is phosphatic be characterized in that, relative to the present invention composition total weight, its content is 0.001~5 weight
Measure %, more preferably 0.05~0.3 weight %.In situation of the phosphatic content less than 0.001 weight % in terms of said reference
Under, etching outline may be bad.On the other hand, in the case where its content is more than 5 weight %, it may occur however that the erosion of molybdenum alloy film
The problem of quarter slows.
EPE polyol EPE
The present invention etchant included in EPE polyol EPE play make surface tension reduce and
Improve the effect of etch uniformity.In addition, above-mentioned EPE polyol EPE by surround after the metal films such as etching
Copper ion of dissolution etc. in etching solution, so as to suppress the activity of copper ion, suppresses the decomposition reaction of hydrogen peroxide.If so drop
The activity of low copper ion, then can stably carry out process during etching solution is used.
Above-mentioned EPE polyol EPE is characterized in that, relative to the composition total weight of the present invention, its content is
0.01~5 weight %, more preferably 2.0~5.0 weight %.It is less than 0.01 weight in the content of above-mentioned EPE polyol EPE
In the case of measuring %, it may occur however that the problem of etch uniformity reduces, the decomposition of hydrogen peroxide is accelerated.On the other hand, contain at it
In the case that amount is more than 5 weight %, there is the shortcomings that producing a large amount of foams.
Above-mentioned EPE polyol EPE can be preferably using selected from glycerine (glycerol), ethylene glycol (ethylene
Glycol), diethylene glycol (diethylene glycol), triethylene glycol (triethylene glycol) and polyethylene glycol
One or more of (polyethylene glycol) etc., but be not limited to this.
Sulfate comprising alkali or alkaline earth metal
Sulfate, which plays, included in the etchant of the present invention makes the good effect of the cone angle profile of pattern, and
Play the effect for adjusting the etching speeds of metal film such as copper film.
The above-mentioned sulfate comprising alkali or alkaline earth metal is one or two hydrogen in sulfuric acid by alkali metal or alkaline earth
The sulfate that metal replacement forms, as concrete example, can use selected from sodium sulphate (sodium sulfate), potassium sulfate
(potassium sulfate), niter cake (sodium hydrogensulfate) and potassium acid sulfate (potassium
One or more of hydrogensulfate) etc., but be not limited to this.
Above-mentioned sulfate is characterized in that, relative to the composition total weight of the present invention, its content is 0.1~5 weight %,
More preferably 0.5~4 weight %.In the case where the content of the sulfate in terms of said reference is less than 0.1 weight %, metal film
Etch capabilities are insufficient and possibly can not realize sufficient etching, and are possible to generation processing number and evaluate the etching characteristic such as bad not
It is good.On the other hand, above-mentioned sulfate content more than 5 weight % in the case of, because of the too fast and unmanageable work of etching speed
Sequence, the process that can not be stablized.
Water
The content of water is composition total weight is become 100 weight % included in the etchant of the present invention
Surplus.Above-mentioned water is not particularly limited, preferably using deionized water.In addition, more preferably degree is removed using embodiment water intermediate ion
Water resistivity value be more than 18M Ω cm deionized water.
In addition, the etchant of the present invention can further include common additive in addition to mentioned component.
As above-mentioned additive, sequestering agent, anticorrosive etc. can be enumerated, but is not limited to this, in order to make the effect of the present invention more
Well, other additives well known in the art can be further included.But in the case where further including tartaric acid, Ke Nengfa
It is raw to separate out therefore not preferred.
Component included in the etchant of the present invention preferably has the purity for semiconductor process.
In addition, as one embodiment of the invention, there is provided a kind of method for forming wiring, it includes:
1) on substrate formed molybdenum alloy film the step of;
2) on above-mentioned molybdenum alloy film formed copper system metal film the step of;
3) optionally leave light reaction material on above-mentioned copper system metal film the step of;And
4) the step of above-mentioned copper system metal film and molybdenum alloy film being etched in the lump using the etchant of the present invention.
Above-mentioned light reaction material is preferably common photoresist, can be selected by common exposed and developed process
Leave to selecting property.
In addition, the present invention provides a kind of manufacture method of array substrate for display device, it is characterised in that including:
A) on substrate formed gate wirings the step of,
B) on the substrate comprising above-mentioned gate wirings formed gate insulator the step of,
C) on above-mentioned gate insulator formed semiconductor layer the step of,
D) on above-mentioned semiconductor layer formed source electrode and drain electrode the step of and
E) the step of forming the pixel electrode being connected with above-mentioned drain electrode,
Above-mentioned a) step or d) at least one step in step be included on aforesaid substrate be laminated metal layer the step of, with
And the step of being etched using etchant,
Above-mentioned etchant is included relative to composition total weight:5~25 weight % of hydrogen peroxide, fluorine compounds
0.01~1 weight %, 0.1~5 weight % of azole compounds, an intramolecular have the water soluble compound of nitrogen-atoms and carboxyl
0.1~5 weight %, 0.001~5 weight % of phosphate, EPE polyol EPE comprising alkali or alkaline earth metal
The water of 0.01~5 weight %, 0.1~5 weight % of sulfate comprising alkali or alkaline earth metal and surplus,
The weight ratio of above-mentioned phosphate and sulfate is 1:3~1:20.
Above-mentioned metal layer can be the metal layer comprising copper or copper alloy.
Above-mentioned display device can be liquid crystal display device or OLED etc., but be not limited to this, etching solution group of the invention
For compound due to that will not produce residue in etching, there is no the bad problem of electrical short or distribution, can be realized in manufacture
Big picture, high brightness circuit array substrate for display device when be efficiently used.
Above-mentioned array substrate for display device can be thin film transistor (TFT) (TFT) array base palte.
In addition, the etchant of the present invention can etch gate wirings, source electrode and drain electrode in the lump, the present invention
One kind in the gate wirings formed comprising the etchant etching using above-mentioned metal film, source electrode and drain electrode is provided
Array substrate for display device above.
Hereinafter, the present invention is described in more detail using embodiment, comparative example and experimental example.However, following embodiments, comparing
Example and experimental example are used to illustrate the present invention, therefore the present invention is from the restriction of following embodiments, comparative example and experimental example, Ke Yijin
The diversified modifications and changes of row.
<Embodiment and comparative example>
The manufacture of 1~8. etchant of embodiment 1~9 and comparative example
Composition and content (weight %) as described in table 1 below, manufacture etchant 180kg.
[table 1]
Note) in above-mentioned table 1,
NHP:Sodium dihydrogen phosphate
PPM:Potassium dihydrogen phosphate
APM:Ammonium phosphate
SS:Sodium sulphate
PS:Potassium sulfate
AS:Ammonium sulfate
TEG:Triethylene glycol (triethylene glycol)
Phosphite:Sodium phosphite (sodium phosphite)
<Experimental example>The etching characteristic evaluation of etchant
Respectively using embodiment 1~9 and the etchant of comparative example 1~8, implement etching work procedure.Utilize injecting type
Experimental facilities (the model name of etching mode:ETCHER (TFT), SEMES companies), the temperature of etchant in etching work procedure
It is set to about 33 DEG C or so.Etching period can be different according to etch temperature, but are usually carried out with 110 seconds or so.Use SEM
(Hitachi, Ltd's product, model name S-4700) detects the section of outline of the copper system metal film etched in above-mentioned etching work procedure, will
As a result it is documented in table 2 below.
The test piece (Cu/MoNb) used in etching work procedure has used following test piece:At glass substrate (Ⅹ 100mm of 100mm)
Upper evaporation molybdenum-niobium alloy film, after copper film is deposited on above-mentioned film, by photoetching (photolithography) process, in substrate
It is upper to form the photoresist with predetermined pattern.
1. etching speed of experimental example is evaluated
Naked eyes measure endpoint detecting (End Point Detection, EPD), obtain different time etching speed (E/R,
Etch Rate), etching speed is only evaluated with the etching speed of longitudinal direction.If by the thickness of the metal film etched
Divided by EPD, then it can obtain (time) per second(thickness)Etching speed, evaluated by following benchmark, and will
The results are shown in table 2.
<Cu etching speed metewands>
○:Well
Х:Difference (is less thanOr exceed)
Unetch:It can not etch
2. cone angle of experimental example (Taperangle, °) evaluation
Cone angle (Taper angle) refers to the gradient on copper (Cu) inclined-plane.Cone angle is excessive or too small, can be steamed in subsequent film
Occur to be become by bad caused crackle (crack) phenomenon of Step Coverage (step coverage) or subsequent film evaporation during plating
Difficulty, therefore it is critically important to maintain suitable cone angle.In this evaluation, evaluated by following benchmark, and the results are shown in
Table 2.
<Cone angle metewand>
○:Well (45~55 °)
Х:Difference (is less than 45 ° or more than 55 °)
3. interface portion erosion assessment of experimental example
It is put into above-mentioned sample to start to spray, if reaching the etching period of 110 seconds, takes out and cleaned with deionized water,
Then it is dried using drying device, photoresist is removed using photoresist stripping machine (PR stripper).Cleaning
After drying, scanning electron microscope (SEM, model name are utilized:SU-8010, Hitachi, Ltd manufacture), confirm copper film (Cu) and
Whether the erosion of molybdenum-niobium film (MoNb) interface portion produces, and show the result in table 2 below.
Nothing:Erosion is not produced
It can not confirm:Whether not being etched and can not confirm to corrode
4. residue of experimental example is evaluated
It is put into above-mentioned sample to start to spray, if reaching the etching period of 110 seconds, takes out and cleaned with deionized water,
Then it is dried using drying device, photoresist is removed using photoresist stripping machine (PR stripper).Cleaning
After drying, scanning electron microscope (SEM, model name are utilized:SU-8010, Hitachi, Ltd's manufacture), measure molybdenum-niobium is not eclipsed
Phenomenon, the i.e. residue carved and left, is evaluated by following benchmark, and shows the result in table 2 below.
Nothing:Do not produce residue
It can not confirm:Whether not being etched and can not confirm that residue produces
Lateral erosion (Sideetch, S/E) variable quantity evaluation of the experimental example 5. based on processing substrate number
Lateral erosion (μm) variable quantity that measure changes with Cu ion concentrations (300~4,000ppm).Lateral erosion (Side etch, S/
E the distance between the side photoresist end that measures and lower metal end after etching) are referred to.If side etching quantity changes
Become, then the resistance of distribution can change and the problem of there may be making signal transmission speed change when TFT drives, because
This preferably minimizes lateral erosion variable quantity.Variable quantity is preferably smaller than 0.1 μm, shows the result in table 2 below
[table 2]
As described in above-mentioned table 2, in the case of using the etchant of embodiment 1~9, Cu etching speeds, cone
Angle excellent, does not produce interface portion erosion and residue, the lateral erosion variable quantity evaluation result based on processing substrate number are also excellent
It is different.
In addition, can be confirmed by Fig. 1, in the case of the copper system metal film etched by the etchant of embodiment 1, erosion
Carve profile (profile) and rectilinear propagation is excellent, and residue is not observed.
On the other hand, in the case of using the etchant of comparative example 1~8, etching characteristic is bad.
In the case of comparative example 1 of the content of hydrogen peroxide less than Optimum Contents, Cu etching speeds are excessively slow and nothing occur
The phenomenon of method etching, is 1 in the weight ratio of phosphate and sulfate:In the case of 2 comparative example 2, there are etching speed it is excessively slow,
The problem of cone angle is big.It is 1 in weight ratio:In the case of 25 comparative example 3, the too fast and unmanageable process of etching speed is confirmed
It in the case where using ammonium sulfate as the comparative example 4 of sulfate, can be confirmed by Fig. 2, produce interface portion and corrode.This
Outside, phosphite (- PO is being used3 3-) replace phosphate (- PO4 3-) comparative example 6 in the case of, can be confirmed by Fig. 3, produce it is residual
Slag, the lateral erosion variable quantity (S/E) based on processing substrate number are very big.
In the case of comparative example 7 of the content of sulfate less than Optimum Contents, it is excessively slow to confirm Cu etching speeds, cone angle
Greatly, the lateral erosion variable quantity based on processing number is big., can in the case where the content of sulfate exceedes the comparative example 8 of Optimum Contents
The too fast and unmanageable process of etching speed is confirmed, the lateral erosion variable quantity (S/E) based on processing substrate number is very big.
Claims (12)
- A kind of 1. etchant of metal film, it is characterised in that relative to composition total weight, comprising:5~25 weight % of hydrogen peroxide,0.01~1 weight % of fluorine compounds,0.1~5 weight % of azole compounds,Water soluble compound 0.1~5 weight % of one intramolecular with nitrogen-atoms and carboxyl,0.001~5 weight % of phosphate comprising alkali or alkaline earth metal,0.01~5 weight % of EPE polyol EPE,0.1~5 weight % of sulfate comprising alkali or alkaline earth metal andThe water of surplus,The weight ratio of the phosphate and sulfate is 1:3~1:20.
- 2. the etchant of metal film according to claim 1, the fluorine compounds are selected from by HF, NaF, NH4F、 NH4BF4、NH4FHF、KF、KHF2、AlF3And HBF4One or more of group of composition.
- 3. the etchant of metal film according to claim 1, it is characterised in that the azole compounds be selected from Three azole compounds, Aminotetrazole based compound, imidazole compound, indoles based compound, purine based compound, pyrazoles system In compound, pyridine based compound, pyrimidine compound, pyrroles's based compound, pyrrolidines based compound and pyrrolin based compound More than one.
- 4. the etchant of metal film according to claim 1, it is characterised in that one intramolecular has nitrogen The water soluble compound of atom and carboxyl is selected from alanine, aminobutyric acid, glutamic acid, glycine, iminodiacetic acid, ammonia three One or more of acetic acid and methyl amimoacetic acid.
- 5. the etchant of metal film according to claim 1, it is characterised in that described to include alkali metal or alkaline earth The phosphate of metal is selected from one or more of sodium dihydrogen phosphate, potassium dihydrogen phosphate, disodium hydrogen phosphate and dipotassium hydrogen phosphate.
- 6. the etchant of metal film according to claim 1, it is characterised in that the polyol type surface-active Agent is selected from one or more of glycerine, ethylene glycol, diethylene glycol, triethylene glycol and polyethylene glycol.
- 7. the etchant of metal film according to claim 1, it is characterised in that described to include alkali metal or alkaline earth The sulfate of metal is selected from one or more of sodium sulphate, potassium sulfate, niter cake and potassium acid sulfate.
- 8. the etchant of metal film according to claim 1, it is characterised in that the metal film is copper system metal Film.
- 9. the etchant of metal film according to claim 8, the copper system metal film is copper or the list of copper alloy Tunic or be multilayer film, the multilayer film is included in the group being made of molybdenum film, molybdenum alloy film, titanium film and titanium alloy film More than one film and film selected from one or more of copper film and tin-copper alloy film.
- A kind of 10. manufacture method of array substrate for display device, it is characterised in that including:A) on substrate formed gate wirings the step of,B) on the substrate comprising the gate wirings formed gate insulator the step of,C) on the gate insulator formed semiconductor layer the step of,D) on the semiconductor layer formed source electrode and drain electrode the step of andE) the step of forming the pixel electrode being connected with the drain electrode,A) the step or d) at least one step in step are included on the substrate the step of being laminated metal layer and make The step of being etched with etchant,The etchant is included relative to composition total weight:5~25 weight % of hydrogen peroxide, fluorine compounds 0.01~ 1 weight %, 0.1~5 weight % of azole compounds, an intramolecular have the water soluble compound 0.1~5 of nitrogen-atoms and carboxyl Weight %, 0.001~5 weight % of phosphate, 0.01~5 weight of EPE polyol EPE comprising alkali or alkaline earth metal The water of %, 0.1~5 weight % of sulfate comprising alkali or alkaline earth metal and surplus is measured,The weight ratio of the phosphate and sulfate is 1:3~1:20.
- 11. the manufacture method of array substrate for display device according to claim 10, it is characterised in that the display dress It is thin film transistor (TFT) (TFT) array base palte to put with array base palte.
- 12. a kind of array substrate for display device, it includes the etching solution combination any one of usage right requirement 1~9 Thing etches one or more of the gate wirings formed, source electrode and drain electrode.
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CN111172542A (en) * | 2018-11-12 | 2020-05-19 | 东友精细化工有限公司 | Silver thin film etching solution composition, etching method and metal pattern forming method |
CN111187625A (en) * | 2018-11-14 | 2020-05-22 | 三星显示有限公司 | Etching composition, method of forming pattern, and method of manufacturing display device |
CN111893488A (en) * | 2020-08-04 | 2020-11-06 | 深圳市乾行达科技有限公司 | Etching solution and preparation method thereof |
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CN113604804A (en) * | 2021-07-07 | 2021-11-05 | 湖北兴福电子材料有限公司 | Etching solution for stabilizing line width loss and etching cone angle in panel copper plating process |
CN114075669A (en) * | 2020-08-10 | 2022-02-22 | 东友精细化工有限公司 | Etchant composition, method for forming wiring, and method for manufacturing array substrate for liquid crystal display device |
WO2022047854A1 (en) * | 2020-09-02 | 2022-03-10 | Tcl华星光电技术有限公司 | Etching solution composition for etching molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy three-layer metal wiring structure and use thereof |
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KR20160112470A (en) * | 2015-03-19 | 2016-09-28 | 동우 화인켐 주식회사 | Etchant composition and manufacturing method of an array for liquid crystal display |
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KR20160112470A (en) * | 2015-03-19 | 2016-09-28 | 동우 화인켐 주식회사 | Etchant composition and manufacturing method of an array for liquid crystal display |
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CN111187625A (en) * | 2018-11-14 | 2020-05-22 | 三星显示有限公司 | Etching composition, method of forming pattern, and method of manufacturing display device |
CN111187625B (en) * | 2018-11-14 | 2022-08-19 | 三星显示有限公司 | Etching composition, method of forming pattern, and method of manufacturing display device |
CN112342547A (en) * | 2019-08-07 | 2021-02-09 | 易安爱富科技有限公司 | Etching liquid composition |
CN112342547B (en) * | 2019-08-07 | 2024-04-16 | 易安爱富科技有限公司 | Etching liquid composition |
CN111893488A (en) * | 2020-08-04 | 2020-11-06 | 深圳市乾行达科技有限公司 | Etching solution and preparation method thereof |
CN114075669A (en) * | 2020-08-10 | 2022-02-22 | 东友精细化工有限公司 | Etchant composition, method for forming wiring, and method for manufacturing array substrate for liquid crystal display device |
WO2022047854A1 (en) * | 2020-09-02 | 2022-03-10 | Tcl华星光电技术有限公司 | Etching solution composition for etching molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy three-layer metal wiring structure and use thereof |
CN113604804A (en) * | 2021-07-07 | 2021-11-05 | 湖北兴福电子材料有限公司 | Etching solution for stabilizing line width loss and etching cone angle in panel copper plating process |
CN113604804B (en) * | 2021-07-07 | 2022-09-23 | 湖北兴福电子材料股份有限公司 | Etching solution for stabilizing line width loss and etching cone angle in panel copper plating process |
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