CN106086891B - A kind of advanced lines tablet copper titanium film acidic etching liquid - Google Patents
A kind of advanced lines tablet copper titanium film acidic etching liquid Download PDFInfo
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- CN106086891B CN106086891B CN201610655100.7A CN201610655100A CN106086891B CN 106086891 B CN106086891 B CN 106086891B CN 201610655100 A CN201610655100 A CN 201610655100A CN 106086891 B CN106086891 B CN 106086891B
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- hydrogen peroxide
- titanium film
- etching liquid
- corrosion inhibiter
- copper titanium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
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Abstract
The invention discloses a kind of advanced lines tablet copper titanium film acidic etching liquid, component includes by mass percentage：1~10% hydrogen peroxide, 0.1~8% hydrogen peroxide stabilizer, 1~10% HNO3, 0.1~10% metal inhibitor, 0.1~3% fluoride sources, 0.1~3% quaternary ammonium hydroxide and the water of surplus；Metal inhibitor includes organic heterocyclic corrosion inhibiter and component A corrosion inhibiter, and component A corrosion inhibiter is selected from least one of epimino, alkynol.Advanced lines tablet copper titanium film acidic etching liquid of the present invention is using the metal inhibitor comprising organic heterocyclic corrosion inhibiter and selected from least one of epimino, alkynol, a step wet etching can be carried out to copper titanium duplicature, etch-rate is moderate, and the angle that the etching face of gained thin copper film end and the substrate of lower layer are formed is between 35~50 °.
Description
Technical field
The present invention relates to etchant technical fields, and in particular to a kind of advanced lines tablet copper titanium film acid etching
Liquid.
Background technology
Currently, in advanced lines flat panel Liquid Crystal panel production technology, copper wiring preparation needs to use copper titanium etching solution to etch
Copper titanium duplex film.Copper titanium film etching solution system well known in the prior art includes persulfate system, hydrogen peroxide system and fluorine
Compound oxidizing acid system.
Wet etching requires to include at following 5 points：High precision machining；Etch residue is few；Etching is uniform；Etching speed is suitable
In；The wiring section shape formed after etching is within the limits prescribed.More specifically wiring section requires to be thin copper film end
Etching face and lower layer substrate formed angle（Cone angle）For 30 ~ 60 ° of positive cone shape, exist from resist layer end to setting
Distance until the wire ends of Obstruct membrane contact under wiring（CD loses）For 1.2 μm hereinafter, preferably 1 μm or less.On
The etching stated in five point requirements is uniformly mainly related to the composition stability of etching solution.
The main composition of copper titanium etchant in Chinese patent disclosed in CN103764874A and CN104911593A
For persulfate, fluorochemical, inorganic acid, cyclic amine compound and water, two schemes are based on persulfate, etch-rate it is fast and
Match wire shaped with good after etching, persulfate therein is ammonium persulfate, sodium peroxydisulfate and potassium peroxydisulfate, no copper ion
Under conditions of self-catalysis, the initial etch rate of above-mentioned etching solution is very slow, then because of the increase of copper ion in etching solution, after etching
Phase reaction speed is more difficult to control；A kind of etching for including the plural layers of layers of copper and titanium layer is disclosed in CN102834547A
Liquid, consisting of hydrogen peroxide, nitric acid, fluoride sources, azole, quaternary ammonium hydroxide and stabilizer of hydrogen peroxide, said components
Middle azole is single as metal inhibitor component, general to the corrosion mitigating effect of titanium layer although the corrosion mitigating effect to copper is preferable, because
This etching speed when etching titanium layer is very fast, and the wiring section shape formed after etching is undesirable, and it is flat not to be suitable for advanced lines
Plate large scale and high-resolution requirement.
Invention content
It is an object of the invention to overcome defect existing in the prior art, provide a kind of etching speed it is moderate, wiring cut open
The satisfactory advanced lines tablet copper titanium film acidic etching liquid of face shape.
To realize above-mentioned technique effect, the technical scheme is that：A kind of advanced lines tablet copper titanium film acidic etching liquid,
It is characterized in that, its component includes by mass percentage：1~10% hydrogen peroxide, 0.1~8% hydrogen peroxide stabilizer, 1
~10% HNO3, 0.1~10% metal inhibitor, 0.1~3% fluoride sources, 0.1~3% quaternary ammonium hydroxide and remaining
The water of amount；Metal inhibitor includes organic heterocyclic corrosion inhibiter and component A corrosion inhibiter, and component A corrosion inhibiter is selected from epimino, alkynol
At least one of.
Under acid condition, compounded with organic heterocyclic corrosion inhibiter using one kind in epimino and alkynol, the hydroxyl matter of alkynol
The sp of sonization and epimino2Hydridization can enhance absorption of the corrosion inhibiter to metal surface, act synergistically with organic heterocyclic corrosion inhibiter,
Metal surface formed multilayer absorption structure, increase metal surface corrosion inhibition agent formed complexing layer compactness extent, to copper with
Titanium layer all has stable corrosion mitigating effect, keeps corrosion inhibiter effect moderate with etch-rate when copper and titanium layer, slows down etching solution liter
The speed of temperature, inhibits being thermally decomposed for hydrogen peroxide, helps to improve the stability of etching solution system, extend the bath longevity of etching solution
Life.In addition, the wiring section shape formed after etching process is good, the wiring for meeting advanced lines tablet large scale liquid crystal panel is wanted
It asks.
In order to advanced optimize etch effect, preferred technical solution is that component includes by mass percentage：4~
8% hydrogen peroxide, 4~7% hydrogen peroxide stabilizer, 2~7 HNO3, 1.7~5% metal inhibitor, 0.1~2% fluorine from
Component, 0.1~2% quaternary ammonium hydroxide and the water of surplus.
It is excessive that layer thickness is complexed, the reduction of etch-rate can be caused, in order to keep the rational multilayer absorption in metal surface thick
Degree, preferred technical solution are that the mass percent of organic heterocyclic corrosion inhibiter is 90~98% in metal inhibitor.
Preferred technical solution is that the structural formula of alkynol compound is：
Wherein, R H, methyl or ethyl.R is poor for the solubility in the longer alkyl of carbochain then alkynol water, more preferably
R is ethyl, and the carbochain the long more is conducive to the coverage and degree of isolation that improve corrosion inhibiter to metal surface.
Preferred technical solution is, organic heterocyclic corrosion inhibiter be in thioether class corrosion inhibiter and Azole Corrosion Inhibitors at least
It is a kind of.Thioether class corrosion inhibiter and Azole Corrosion Inhibitors can form the protection film layer of thinner thickness on copper surface, slow with other heterocycles
Erosion agent is compared, and the thermal stability of said protection film layer is fine.
In view of the environmental-protecting performance of etching solution, preferred technical solution is that fluoride sources are selected from ammonium fluoride and hydrogen fluoride
At least one of ammonium.
The copper ion that etching generates is that heavy metal ion inhibits the decomposition of hydrogen peroxide to ensure the stability of hydrogen peroxide,
Preferred technical solution is that hydrogen peroxide stabilizer is formed by bipyridyl and solvay-type combination of stabilizers, wherein solvay-type stabilizer
To be selected from least one of aminophosphonic acid, amino carboxylic acid and polyhydric carboxylic acid.Bipyridyl and solvay-type stabilizer can quickly and network
Copper ion is closed, the copper ion amount dissociated in etching solution is reduced.
In order to accelerate the sequestration rate to copper ion, the decomposition of hydrogen peroxide is further suppressed, preferred technical solution is network
Mould assembly stabilizer is selected from least one of aminotrimethylenephosphonic acid and 3- amino -1,2,4- triazoles.
Further preferred technical solution is that hydrogen peroxide stabilizer is bipyridyl and 3- amino -1,2,4- triazole groups
It closes, the mass percent of bipyridyl is 0.5~5% in hydrogen peroxide stabilizer.Above two substance is applied in combination to dioxygen
Speed is complexed faster better than the effect being used alone, copper ion in the stablizing effect of water.
The advantages of the present invention are：
Advanced lines tablet copper titanium film acidic etching liquid of the present invention is used comprising organic heterocyclic corrosion inhibiter and selected from epimino, alkynes
The metal inhibitor of at least one of alcohol can carry out a step wet etching to copper titanium duplicature, and etch-rate is moderate, gained copper cloth
The angle that the etching face of thread end and the substrate of lower layer are formed is between 35~50 °.
Specific implementation mode
With reference to embodiment, the specific embodiment of the present invention is further described.Following embodiment is only used for more
Add and clearly demonstrate technical scheme of the present invention, and not intended to limit the protection scope of the present invention.
The preparation of etch target：Using glass as substrate, titanium is subjected to sputtering and forms the Obstruct membrane (titanium layer) being made of titanium,
Then wiring material will be made to form a film (layers of copper) with copper sputtering of materials as main component, and will then be coated with resist, exposure transfer figure
After case mask, development forms Wiring pattern, manufactures the plural layers for including layers of copper and titanium layer of titanium layer superimposed layer layers of copper.
Examples 1 to 4
Embodiment 1-4 etching solutions are configured according to content listed in Table：
In the component of embodiment 1-4, hydrogen peroxide is all made of common phenylurea, and the metal inhibitor of 1-4 is all made of ring Asia
The recombinations such as amine and 5- amino -1H- tetrazoliums form；Fluoride sources use ammonium fluoride；
Embodiment 5-7 based on embodiment 4, difference lies in：
Corrosion inhibiter in embodiment 5 uses propilolic alcohol（R in alkynol structural formula is H）With 5- methyl-1 H- benzotriazole
It is composed, in corrosion inhibiter and the weight percent of alkynol is 10%；
Corrosion inhibiter uses butynol in embodiment 6（R in alkynol structural formula is methyl）With 5- methyl-1 H- benzos three
Azoles is composed, and the weight percent of butynol is 2% in corrosion inhibiter；Fluoride sources use ammonium acid fluoride；
Corrosion inhibiter uses pentyne alcohol in embodiment 7（R in alkynol structural formula is ethyl）, epimino and 4- methylthiazols
It is composed, wherein pentyne alcohol and epimino etc. mix again, and it is slow to account for metal for the sum of the weight of pentyne alcohol and epimino in corrosion inhibiter
The weight percent for losing agent is 6%；Fluoride sources use ammonium acid fluoride；
Embodiment 8-10 based on embodiment 7, difference lies in：
Embodiment 8 is mixed again using bipyridyl and 3- amino -1,2,4- triazoles etc.；
Embodiment 9 is composed using bipyridyl and aminotrimethylenephosphonic acid, the matter of bipyridyl in hydrogen peroxide stabilizer
It is 0.5% to measure percentage.
Embodiment 10 uses bipyridyl and 3- amino -1,2,4- triazoles to be composed, and pyrrole is joined in hydrogen peroxide stabilizer
The mass percent of pyridine is 5%.
Comparative example is identical as the component content of embodiment 4, difference lies in：
Metal inhibitor in comparative example 1 is epimino；Metal inhibitor in comparative example 2 is pentyne alcohol, in comparative example 3
Metal inhibitor be 5- methyl-1 H- benzotriazole；
Hydrogen peroxide stabilizer in comparative example 4 is bipyridyl；
Etching solution performance test：
A：By the etching solution of embodiment 1-10 and comparative example 1-4, the etching containing layers of copper and titanium layer to above-mentioned at 60 DEG C
Object etches 60~150s, obtains sample after the etching containing layers of copper and titanium layer on glass substrate, comparison etch-rate, bottom line
Wide CD LOSS.
The CD LOSS of embodiment 1-10 are respectively less than 1 μm, and hydrogen peroxide concentration is low in embodiment 1, and etch-rate is relatively low, implement
Etch-rate in example 2 is higher, and the etch-rate of embodiment 5-10 is 24~26nm/min, and bottom line width CD LOSS are respectively less than
0.8 μm, the etch-rate of embodiment 7-10 is 26nm/min.The etch-rate of comparative example 1 and comparative example 2 is less than embodiment 4-
10, bottom line width CD LOSS are respectively 0.83,0.91 μm；The sample etching titanium layer speed erosion of comparative example 3, etching speed are
22 nm/min, bottom line width CD LOSS are 0.94 μm.
B：Compare etching solution in hydrogen peroxide by thermal stability：Pass through the baking oven by a certain amount of etching solution at 85 ± 1 DEG C
Interior heating 24 hours, contained H after titrating it before heating2O2Concentration calculates its active oxygen loss（A.O. it loses）：
A.O. lose=【(H2O2Initial concentration)-(H2O2Terminate concentration)】/ H2O2Initial concentration.
Embodiment 4, embodiment 8-10,4 etching solution of comparative example A.O. loss be respectively 4.8%, 3.5%, 2.7%, 2.3%,
4.3%。
C：Comparison etching solution contain hydrogen peroxide under Metal Ions Conditions by thermal stability：It is added into a certain amount of etching solution
Cu2+, make Cu2+Ion concentration titrates it in addition Cu in 2000~2100ppm2+H contained by front and back ion2O2Concentration calculates its work
Property oxygen loss（A.O. it loses）.Embodiment 4, embodiment 8-10,4 etching solution of comparative example A.O. loss be respectively 5.1%, 3.9%,
2.7%、2.3%、4.7%。
In contrast, it can be reached with the solvay-type combination of stabilizers use in addition to bipyridyl using bipyridyl in embodiment 8-10
To the stabilized hydrogen peroxide effect advanced optimized.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvements and modifications can also be made, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of advanced lines tablet copper titanium film acidic etching liquid, which is characterized in that its component includes by mass percentage：1~
10% hydrogen peroxide, 0.1~8% hydrogen peroxide stabilizer, 1~10% HNO3, 0.1~10% metal inhibitor, 0.1~3%
Fluoride sources, 0.1~3% quaternary ammonium hydroxide and the water of surplus；Metal inhibitor includes organic heterocyclic corrosion inhibiter and component
A corrosion inhibiter, component A corrosion inhibiter are the organic heterocyclic corrosion inhibiter in metal inhibitor selected from least one of epimino, alkynol
Mass percent is 90~98%.
2. advanced lines tablet copper titanium film acidic etching liquid according to claim 1, which is characterized in that its component presses quality hundred
Divide and includes than meter：4~8% hydrogen peroxide, 4~7% hydrogen peroxide stabilizer, 2~7 HNO3, 1.7~5% corrosion inhibition for metal
Agent, 0.1~2% fluoride sources, 0.1~2% quaternary ammonium hydroxide and surplus water.
3. advanced lines tablet copper titanium film acidic etching liquid according to claim 2, which is characterized in that the knot of alkynol compound
Structure formula is：
Wherein, R H, methyl or ethyl.
4. advanced lines tablet copper titanium film acidic etching liquid according to claim 1, which is characterized in that organic heterocyclic corrosion inhibiter
To be selected from least one of thioether class corrosion inhibiter and Azole Corrosion Inhibitors.
5. advanced lines tablet copper titanium film acidic etching liquid according to claim 1, which is characterized in that fluoride sources be selected from
At least one of ammonium fluoride and ammonium acid fluoride.
6. advanced lines tablet copper titanium film acidic etching liquid according to claim 1, which is characterized in that hydrogen peroxide stabilizer by
Bipyridyl and solvay-type combination of stabilizers form, and wherein solvay-type stabilizer is selected from aminophosphonic acid, amino carboxylic acid and polyhydroxy carboxylic
At least one of acid.
7. advanced lines tablet copper titanium film acidic etching liquid according to claim 6, which is characterized in that solvay-type stabilizer is
Selected from least one of aminotrimethylenephosphonic acid and 3- amino -1,2,4- triazoles.
8. advanced lines tablet copper titanium film acidic etching liquid according to claim 7, which is characterized in that hydrogen peroxide stabilizer is
Bipyridyl and 3- amino -1,2,4- triazoles are composed, in hydrogen peroxide stabilizer the mass percent of bipyridyl be 0.5~
5%。
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| CN111094627B (en) * | 2017-09-29 | 2022-04-05 | 松下知识产权经营株式会社 | Etching solution and etching concentrated solution for multilayer film and etching method |
| CN113106453A (en) * | 2020-02-26 | 2021-07-13 | 江苏艾森半导体材料股份有限公司 | Etching solution composition and application thereof |
| CN111647888A (en) * | 2020-05-27 | 2020-09-11 | 湖北兴福电子材料有限公司 | Copper etching solution with long etching life |
| CN112064032B (en) * | 2020-09-11 | 2022-04-01 | 武汉迪赛新材料有限公司 | Supplementary liquid capable of prolonging service life of hydrogen peroxide etching liquid |
| CN112921321A (en) * | 2021-01-29 | 2021-06-08 | 四川和晟达电子科技有限公司 | Environment-friendly low-cost titanium-containing metal etching solution composition and use method thereof |
| CN113445052A (en) * | 2021-07-28 | 2021-09-28 | 南通群安电子材料有限公司 | Differential etching solution suitable for MSAP (multiple-site-sensitive protection) process |
| CN116120936B (en) * | 2022-10-27 | 2024-06-25 | 上海天承化学有限公司 | Etching liquid medicine and preparation method and application thereof |
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| CN103890234A (en) * | 2011-11-17 | 2014-06-25 | 易安爱富科技有限公司 | Molybdenum-alloy-film and indium-oxide-film etching-solution composition |
| CN104611702A (en) * | 2015-02-11 | 2015-05-13 | 江阴江化微电子材料股份有限公司 | Liquid crystal panel copper-molybdenum membrane etching liquid |
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| JP4215345B2 (en) * | 1999-06-25 | 2009-01-28 | 荏原ユージライト株式会社 | Etching agent for iron-nickel alloy |
| CA2539246A1 (en) * | 2003-09-30 | 2005-04-14 | Basf Aktiengesellschaft | Method for pickling metallic surfaces by using alkoxylated alkynols |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103890234A (en) * | 2011-11-17 | 2014-06-25 | 易安爱富科技有限公司 | Molybdenum-alloy-film and indium-oxide-film etching-solution composition |
| CN104611702A (en) * | 2015-02-11 | 2015-05-13 | 江阴江化微电子材料股份有限公司 | Liquid crystal panel copper-molybdenum membrane etching liquid |
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