CN103137534A - 基板支撑装置 - Google Patents

基板支撑装置 Download PDF

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CN103137534A
CN103137534A CN201210480502XA CN201210480502A CN103137534A CN 103137534 A CN103137534 A CN 103137534A CN 201210480502X A CN201210480502X A CN 201210480502XA CN 201210480502 A CN201210480502 A CN 201210480502A CN 103137534 A CN103137534 A CN 103137534A
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support device
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立川俊洋
宫原淳一
米仓一博
花待年彦
高原刚
二口谷淳
桥本大辅
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NHK Spring Co Ltd
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Abstract

本发明提供一种具有高耐电压与高耐热性的金属制的基板支撑装置。本发明的基板支撑装置具备：由金属形成的基板部；连接于平板部且由金属形成的轴部；配置于平板部的内部的发热体；以及通过陶瓷喷镀形成于平板部的与轴部相对置的第一面上的绝缘膜。还可以具有形成于与平板部的第一面大体垂直的第二面上的绝缘膜。

Description

基板支撑装置
技术领域
本发明涉及用于半导体装置的制造的基板支撑装置。尤其是涉及内置有发热体的金属制的基板支撑装置。 
背景技术
在半导体装置制造中，在化学气相沉积（CVD）、表面改质等处理工序中，会将基板支撑装置配置于半导体制造装置内。此外，在使基板支撑装置发热来使用的情况下，在半导体制造装置内配置内置有发热体的基板支撑装置。这种基板支撑装置具备利用轴来支撑由金属或陶瓷形成的平板的构造。此外，也可以在平板内部配置等离子体电极或发热体，并经由配置于支撑轴内部的配线，连接到设置于半导体制造装置外部的控制装置上。 
作为基板支撑装置的平板，常使用氮化铝（AlN）或氧化铝（Al2O3）等块状陶瓷（bulkceramics）。但是，为了在基板支撑装置中配置等离子体电极或发热体，需要将平板内部制成复杂的形状，而块状陶瓷难以进行加工。另一方面，金属制平板易于在内部形成复杂的构造，相比块体陶瓷能够以廉价制造。在使用金属制平板的情况下，需要将搭载基板的面进行绝缘覆盖，或者减低因接触对基板造成的金属污染，例如专利文献1中，记载了进行了氧化铝膜处理（阳极氧化处理）的金属制平板。 
专利文献1：日本特开2007－184289号公报 
然而，在对金属制平板进行氧化铝膜处理时，氧化铝的膜厚为50～75μm左右，耐电压为0.8～1kV左右，难以实现更高的耐电压。另外，在如25nm工艺的半导体装置这样精密的半导体装置的制造过程中，为了防止金属污染的覆盖，需要具有高耐热性的覆盖。 
发明内容
本发明是解决上述问题的技术，其提供一种具有高耐电压和高耐热性的金属制的基板支撑装置。 
根据本发明的一个实施方式，提供一种基板支撑装置，其具备由金属形成的平板部、连接于所述平板部并由金属形成的轴部、配置于所述平板部的内部的发热体、以及利用陶瓷喷镀形成于所述平板部的与所述轴部相对置的第一面上的绝缘膜。 
在所述基板支撑装置中，也可以具备在与所述平板部的第一面大体垂直的第二面上形成的绝缘膜。 
在所述基板支撑装置中，也可以在所述平板部的所述第一面与所述第二面的拐角部具有倒角或曲率，和/或从所述平板部的第二面朝向与所述轴部连接的所述平板部的第三面具有倒角或曲率。 
在所述基板支撑装置中，也可以在所述平板部的所述第一面与所述第二面的拐角部具有0.5mm以上的倒角或曲率半径，和/或从所述平板部的第二面朝向与所述轴部连接的所述平板部的第三面具有0.5mm以上的倒角或曲率半径。 
在所述基板支撑装置中，从所述平板部的第二面朝向与所述轴部连接的所述平板部的第三面可以具有与所述平板部的板厚大致相等的曲率半径。 
在所述基板支撑装置中，所述第三面还可以具备绝缘膜。 
在所述基板支撑装置中，也可以所述平板部的第一面具备凹部，所述第一面的凹部的拐角部具有0.5mm以上的倒角或曲率半径。 
所述绝缘膜还可以通过以成为在所述基板支撑装置的实际使用温度中不发生裂纹的残余应力的工作温度，喷镀到所述平板部而形成。 
根据本发明，能够提供一种具有高耐电压和高耐热压的金属制的基板支撑装置。 
附图说明
图1是本发明的一个实施方式涉及的基板支撑装置100的立体图。 
图2是本发明的一个实施方式涉及的基板支撑装置100的图1的AA’的剖视图。 
图3是本发明的一个实施方式涉及的基板支撑装置200的相当于图1的AA’位置的剖视图。 
图4是本发明的一个实施方式涉及的基板支撑装置300的图1的AA’剖视图。 
图5是本发明的一个实施方式涉及的基板支撑装置400的相当于图1的AA’位置的剖视图。 
（附图标记说明） 
100基板支撑装置，110平板部，113凹部，119绝缘膜，120发热体，150轴部， 170中空构造，190制冷剂流路，200基板支撑装置，210平板部，213凹部，219绝缘膜，290制冷剂流路，300基板支撑装置，310平板部，313凹部，319绝缘膜，400基板支撑装置，410平板部，413凹部，419绝缘膜。 
具体实施方式
以下，参照附图对本发明的一个实施方式涉及的基板支撑装置，进行说明。另外，以下的实施方式是本发明的基板支撑装置的一例，本发明的基板支撑装置并不限定于以下的实施方式。 
经氧化铝膜处理的膜厚对于金属制平板赋予充分的耐电压是困难的，因此本发明人对于在能够实现更高耐电压的金属制平板上形成陶瓷膜的方法进行了研究。作为在金属制平板上形成陶瓷绝缘层的方法，可举出如陶瓷喷镀，虽然能够实现高耐电压，但是在高温条件下陶瓷层会产生裂痕，结果产生平板的腐蚀或平板与基板间的电弧放电，从而难以提高半导体装置的成品率。因此，只是单纯地以低熔点进行陶瓷喷镀难以同时实现高耐电压及高耐热性。 
针对上述问题进行深刻研究的结果，本发明的发明人发现了在能够实现所希望的耐电压的范围内，形成尽可能薄的绝缘层，从而能够实现在高温条件下也不会产生裂痕的基板支撑装置。 
（实施方式1） 
图1是本发明的一个实施方式涉及的基板支撑装置100的立体图。此外，图2是图1的AA’剖视图。本实施方式涉及的基板支撑装置100具备平板部110及轴部150，在平板部110的内部配置有发热体120。在平板部110的上表面形成用于支撑基板的凹部113，在平板部110的与凹部113相反侧的中央部连接有轴部150。轴部150具有中空构造170。轴部150的中空构造170连接于发热体120，并配置有连接到外部控制装置（未图示）的配线160。 
在基板支撑装置100中，在支撑平板部110的基板的面113以及平板部110的侧面上形成绝缘膜119。在平板部110中，上表面与侧面大体垂直，平板部110的上表面与侧面的拐角部具有凸出的曲率。此外，平板部110的侧面具有朝向与里面的轴部150相连接的部分方向向外侧凸出的曲率。平板部110的凹部113的拐角部被实施了具有朝向外侧凸出的曲率的倒圆角加工（R加工）。 
本实施方式涉及的平板部110及轴部150是使用金属而形成的。作为能够利用的金属，可以从基板支撑装置的制造中所使用的公知材料中选择，例如可举出铝、不锈钢、 铜、镍、钛等。此外，平板部110由两个部件110a及110b构成，在部件110a或110b上形成沟槽以配置发热体120。部件110a及110b通过钎焊或焊接而接合。 
通过对于平板部110及轴部150使用金属作为材料，而能够将图2所示的制冷剂流路190形成于轴部150。制冷剂流路190是用于使空气等气体、或是油、乙二醇水溶液等液体回流，并使轴部150帮助调整加热器温度的构造。这样复杂的构造在以陶瓷作为材料的情况下难以制造，而通过将金属作为材料来使用，能够通过钎焊或焊接而形成在轴部150上。根据该机构，可以提供进行更高度的温度调整的装置。此外，上述的倒圆角加工在使用金属的情况下也很容易进行。 
在本发明中，绝缘膜119由陶瓷喷镀形成。如果使用陶瓷喷镀，则与氧化铝膜处理相比能够使膜厚更厚。然而，在通过陶瓷喷镀加厚绝缘膜119时，在高温条件下绝缘膜119会产生裂痕。本发明涉及的绝缘膜119在能够实现所希望的耐电压的范围内，形成为尽可能薄的厚度。因此，绝缘膜119的膜厚可以对应于所要求的耐电压而任意设定。平板部110通过实施由上述的倒圆角加工，而能够抑制绝缘膜119的拐角部处的应力集中，难以在高温条件下产生裂痕。 
本实施方式涉及的绝缘膜119，只要是满足所希望的耐电压，且为能够陶瓷喷镀的材料，则可以使用公知材料，例如可以选择碱土类金属、稀土类金属、铝、钽、硅中的一种以上的氧化物。具体地说，可举出氧化铝（Al2O3）、氧化镁（MgO）、氧化钇（Y2O3）等。在本发明中，使用上述的金属与绝缘膜的热膨胀系数差异小的材料的组合。在平板部110与绝缘膜119的热膨胀系数的差大时，在高温条件下绝缘膜119容易裂开。作为热膨涨系数差异小的材料的组合，例如可举出铝（Al）与氧化铝的组合。通过将铝用于平板部110，并将氧化铝用于绝缘膜119，而使绝缘膜119难以裂开。一般而言，陶瓷具有对拉伸应力较弱的物性，通过将热膨胀的铝用于平板部110，在高温条件下平板部110跟随绝缘膜119一起膨胀，而使绝缘膜119难以裂开。 
此外，在本实施方式涉及的绝缘膜119中，优选为通过陶瓷喷镀形成的陶瓷被膜的组成是化学计量成分或与其相近的成分。由化学计量成分或与其相近的成分形成的绝缘膜119即便在高温条件下也难以裂开。若刻意地使陶瓷被膜的含氧量低于化学计量成分，则绝缘膜119会变得容易裂开，无法发挥充分的耐电压。另一方面，若刻意地使陶瓷被膜的含氧量高于化学计量成分，则绝缘膜119相对平板部110的贴合性降低，因此不优选。 
此外，本实施方式涉及的绝缘膜119的陶瓷喷镀中，等离子体动作气体使用氧气或含氧气体。通过使用氧气或含氧气体作为等离子体动作气体，利用陶瓷喷镀形成的绝缘 膜119的成分比以往的喷镀膜成分更接近于化学计量成分，能够同时实现良好的电绝缘性与耐腐蚀性。 
在本实施方式涉及的绝缘膜119形成中，通过陶瓷喷镀形成比能够实现规定耐电压的膜厚更厚的喷镀膜。接着，实施表面研磨加工，由此能够得到所希望的膜厚。此外，在本实施方式中，优选为至少对平板部110的上表面方向以及侧面方向这两个方向进行陶瓷喷镀。为了确保平板部110表面的绝缘性并防止金属污染，而至少在上表面方向及侧面方向这两个方向形成绝缘膜119。又如上所述，本实施方式中，平板部110的侧面具有朝向与里面的轴部150的连接部分方向向外侧凸出的曲率。因此，在平板部110的侧面上，朝向与里面的轴部150的连接部分方向逐渐变薄地形成绝缘膜119，绝缘膜119不易从平板部110剥离。 
本实施方式中，从减少应力集中的目的出发，优选为在平板部110的上表面与侧面的拐角部具有0.5mm以上的曲率半径R1。此外，平板部110的凹部113的拐角部也因相同理由，优选具有0.5mm以上的曲率半径R3。另一方面，在平板部110侧面形成的、朝向与轴部150的连接部分方向的外侧具有凸出的曲率（1/R值），其曲率半径R2优选被设定得大。本实施方式中，将所述曲率半径（R值）设为与平板部110的板厚大致相等的值，由此从平板部110的侧方进行喷镀，由此能够从平板部110的侧面朝向与里面的轴部150的连接方向逐渐变薄地形成绝缘膜119。 
本实施方式中，通过在平板部110的上表面与侧面的拐角部具有凸出的曲率，基板支撑装置100能够缓和因使用时的加热或冷却引起的应力集中，并防止绝缘膜119发生裂痕。此外，从平板部110的侧面朝向与里面的轴部150的连接方向逐渐变薄地形成绝缘膜119，从而能够防止绝缘膜119从平板部110剥离。 
此外，在本实施方式涉及的基板支撑装置100中，也可以形成能够缓冲平板部110与绝缘膜119间的耐压差的缓冲层。本实施方式涉及的缓冲层中，例如可以使用氧化镁（MgO）。 
当设平板部110的热膨胀率设为αs，绝缘膜119的热膨胀率为αf，喷镀中的工作温度为T0，室温为T1，加热器使用温度为T2，绝缘膜119的杨氏模量设为E时，绝缘膜119中产生的热应力σ在平板部110的厚度远大于绝缘膜119的膜厚的情况下如以下公式所示。 
冷加工时：σ=（αs－αf）·E·（T0－T1） 
热加工时：σ=（αs-αf）·E·（T0-T2） 
冷加工时（T0－T1）为正，因αs＞αf，σ为正而承受压缩应力。然而，如果在超过喷镀中的平板部110的温度的温度下加热使用基板支撑装置，则σ为负而使绝缘膜119产生拉伸应力，成为裂缝发生的主因。 
在此，本实施方式中，优选为在基板支撑装置100的实际使用温度中以成为不致于发生裂纹的残余应力的工作温度，对平板部110进行喷镀而形成绝缘膜119。本实施方式涉及的工作温度可以在考虑基板支撑装置100的实际使用温度、平板部110的材料与绝缘膜119的材料各自的热膨胀系数、平板部110的大小（直径）以及绝缘膜119的厚度等后确定。在本实施方式中，例如通过将喷镀中的工作温度设为150℃以上且250℃以下，能够抑制在所述温度带附近产生拉伸应力。 
如上说明，因本发明涉及的基板支撑装置中，通过对于平板部及轴部采用金属，而不仅能够进行复杂的加工，还能够通过陶瓷喷镀在平板部上形成薄绝缘膜，从而能够实现在高温条件下也难以裂开且高耐电压的基板支撑装置。 
（实施方式2） 
图3是本发明的一个实施方式涉及的基板支撑装置200的相当于图1的A-A’位置的剖视图。本实施方式涉及的基板支撑装置200具备由210a、210b及210c三个部件构成的平板部210以代替平板部110。发热体120是通过在部件210a或210b上形成沟槽来配置的。此外，在部件210b或210c上形成沟槽并配置制冷剂流路290。在平板部210的上表面形成有用于支撑基板的凹部213，并在平板部210的与凹部213相反侧的中央部连接有轴部150。因轴部150与实施方式1中说明的轴部相同，故省略详细说明。 
在基板支撑装置200中，平板部210的支撑基板的面213、平板部210的侧面以及平板部210的连接于轴部150的背面上形成有绝缘膜219。在平板部210中，上表面与侧面、侧面与背面大体垂直；上表面与侧面的拐角部及侧面与背面的拐角部被实施了具有向外侧凸出的曲率的倒圆角加工。 
在本实施方式中，从减少应力集中的目的出发，优选为使平板部210的上表面与侧面的拐角部具有0.5mm以上的曲率半径R1。平板部210的凹部213的拐角部也因相同理由，优选具有0.5mm以上的曲率半径R3。本实施方式中，侧面与背面之间的拐角部也因相同理由，优选具有0.5mm以上的曲率半径R2。因此，本实施方式中，R1与R2相等或相异均可。 
本实施方式涉及的平板部210及轴部150是使用金属形成的。能够利用的金属已在实施方式1中进行了说明，故在此省略详细说明。通过使用金属，部件210a、210b与 210c的接合以及平板部210与轴部150的接合能够钎焊或焊接进行。 
制冷剂流路290是用于帮助加热器温度的调整的机构，在平板部210中，只要能够有效进行加热器温度的调整，则可以与发热体120相同地配置，也可以以漩涡状地进行配置。这种复杂的构造在以陶瓷为材料的情况下难以制造，但可以通过使用金属为材料来实现。根据该机构，可以提供进行更高度的温度调整的机构。此外，在使用金属的情况下上述的倒圆角加工也易于进行。 
在本发明中，绝缘膜219通过陶瓷喷镀形成。本发明涉及的绝缘膜219在能够实现所希望的耐电压的范围内尽可能薄地形成。因此，绝缘膜219的膜厚能够对应于所要求的耐电压而任意设定。平板部210能够通过施以如上述的倒圆角加工，抑制绝缘膜219的拐角部处的应力集中，使其在高温条件下也难以裂开。 
本实施方式涉及的绝缘膜219只要是满足所希望的耐电压且能够进行陶瓷喷镀的材料即可，由于在实施方式1中已进行了详细说明，故在此省略。又如上所述，在本实施方式涉及的绝缘膜219中，通过陶瓷喷镀形成的陶瓷被膜的成分优选是化学计量成分或接近所述成分的成分。以化学计量成分或接近所述成分形成的绝缘膜219在高温条件下也难以裂开。 
此外，在本实施方式涉及的绝缘膜219的陶瓷喷镀中，等离子体动作气体使用氧气或含氧气体。通过使用氧气或含氧气体作为等离子体动作气体，利用陶瓷喷镀形成的绝缘膜119能够比以往的喷镀膜成分更接近化学计量成分，能够同时实现优良的电绝缘性与耐腐蚀性。 
在本实施方式涉及的绝缘膜219的形成中，通过陶瓷喷镀形成比能够实现规定耐电压的膜厚更厚的喷镀膜。接着，实施表面研磨加工，由此能够得到所希望的膜厚。此外，在本实施方式中，对平板部210的上表面方向、侧面方向以及背面方向这三个方向进行陶瓷喷镀。此外，本实施方式涉及的平板部210的拐角部形状可以加工成如实施方式1中说明的那样，平板部210的侧面具有朝向与里面的轴部150的连接部分方向向外侧凸出的曲率，此时，也可以省略在平板部210背面形成绝缘膜219，以简化制造工序。 
此外，本实施方式涉及的基板支撑装置200中，在平板部210与绝缘膜219之间也可以形成用于缓冲耐压之差的缓冲层。本实施方式涉及的缓冲层可以使用例如氧化镁（MgO）。如实施方式1中所说明，在本实施方式中，优选为以成为在基板支撑装置200的实际使用温度中不发生裂纹的残余应力的工作温度，对平板部210进行喷镀而形成绝缘膜219。 
如以上所说明，本发明涉及的基板支撑装置中，通过对于平板部及轴部使用金属，而不仅能够进行复杂的加工，还可以通过陶瓷喷镀在平板部上形成薄的绝缘膜，从而能够在高温条件下不易裂开且实现高耐电压。 
（实施方式3） 
图4是本发明的一个实施方式涉及的基板支撑装置300的相当于图1的AA’位置的剖视图。本实施方式涉及的基板支撑装置300是对拐角部进行了倒角的平板部310来取代平板部110。在部件310a或310b上形成沟槽来配置发热体120。在平板部310的上表面形成用于支撑基板的凹部313，在平板部310的与所述凹部313相反侧的中央部连接有轴部150。轴部150是与实施方式1中所说明的轴部相同，因此省略详细说明。又如实施方式2所说明，也可以在部件310b或310c上形成沟槽来配置制冷剂流路。 
在基板支撑装置300中，在支撑平板部310的基板的面313以及平板部310的侧面上形成绝缘膜319。在平板部310中，上表面与侧面大体垂直，平板部310的上表面与侧面之间的拐角部被实施倒角加工。此外，平板部310的侧面与实施方式1相同，朝向与里侧的轴部150的连接部分方向具有向外侧凸出的曲率。平板部310的凹部313的拐角部被倒角。 
本实施方式中，从减少应力集中的目的出发，优选在平板部310的上表面与侧面之间的拐角部实施0.5mm以上的倒角C1。平板部310的凹部313的拐角部也因相同理由，优选实施0.5mm以上的倒角C3。另一方面，本实施方式中，如实施方式1所说明，具有在平板部310的侧面上形成的、朝向与轴部150连接部分方向的外侧凸出的曲率（1/R值），所述曲率半径R2的值优选设置得大。在本实施方式中，将所述曲率半径（R值）设为大致等于平板部310的板厚的值，从而从平板部310的侧方通过喷镀，能够自平板部310的侧面起朝向与里面的轴部150的连接方向逐渐变薄地形成绝缘膜319。 
在本实施方式中，对于平板部310的上表面与侧面的拐角部实施倒角，从而能够使基板支撑装置300缓和因使用时的加热或冷却引起的应力集中，并防止绝缘膜319上发生裂纹。另外，在平板部310的侧面朝向与里面的轴部150的连接方向逐渐变薄地形成绝缘膜319，从而能够防止绝缘膜319从平板部310剥离。 
另外，本实施方式涉及的平板部310及轴部150的材料及制造方法与实施方式1相同，故省略详细说明。 
如以上所说明，本发明涉及的基板支撑装置中，通过对于平板部及轴部采用金属，不仅能够进行复杂的加工，还能够在平板部上通过陶瓷喷镀形成薄的绝缘膜，由此能够 在高温条件下难以裂开且实现高耐电压。 
（实施方式4） 
图5是本发明的一个实施方式涉及的基板支撑装置400的相当于图1的AA’位置的剖视图。本实施方式涉及的基板支撑装置400与平板部210相同地具有由三个部件410a、410b及410c构成的平板部410。在部件410a或410b上形成沟槽来配置发热体120。此外，在部件410a或410b上形成沟槽来配置制冷剂流路290。在平板部410的上表面上形成用于支撑基板的凹部413，在平板部410的与凹部413相反侧的中央部连接轴部150。轴部150与实施方式1中说明的轴部相同，故省略详细说明。 
在基板支撑装置400中，在支撑平板部410的基板的面413、平板部410的侧面以及连接于轴部150的背面上形成绝缘膜419。在平板部410中，上表面与侧面、侧面与背面大体垂直，上表面与侧面之间的拐角部、侧面与背面之间的拐角部被倒角。此外，平板部410的凹部413的拐角部被倒角。 
本实施方式中，从减少应力集中的目的出发，优选为在平板部410的上表面与侧面的拐角部实施0.5mm以上的倒角C1。平板部410的凹部413的拐角部也因相同理由，优选为实施0.5mm以上的倒角C3。本实施方式中，侧面与背面之间的拐角部也因相同理由，优选为实施0.5mm以上的倒角C2。因此，本实施方式中，C1与C2相等或相异均可。 
此外，本实施方式涉及的平板部410及轴部150的材料及制造方法，因与实施方式2相同，故省略详细说明。 
如以上所说明，本发明的基板支撑装置中，通过对于平板部及轴部采用金属，不仅能够进行复杂的加工，还能够在平板部上通过陶瓷喷镀形成薄的绝缘膜，从而能够在高温条件下难以裂开且实现高耐电压。 
［实施例］ 
关于上述的本发明涉及的基板支撑装置100，以下示出实施例，并进行详细说明。 
作为实施例，平板部110采用铝，绝缘膜119采用氧化铝。绝缘膜119是通过陶瓷喷镀形成250μm～300μm的喷镀膜，并通过研磨加工制成为100μm～150μm的膜厚。 
将制造好的基板支撑装置100在120℃、150℃、200℃以及250℃下用加热炉加热5小时，并检测绝缘膜119是否产生裂缝。任意情况下均未产生裂缝。表1中整理出检测 结果。 
［表1］ 
Figure BDA00002454132800101
另一方面，在研磨加工后的绝缘膜119的膜厚为300μm以上的情况下，会产生裂缝。此外，在施加2kV的直流电压（DC）的绝缘耐压试验中，膜厚不足90μm的话会使绝缘膜119破坏。由此结果可知，膜厚优选在100μm以上且200μm以下。 
（热循环试验） 
在半导体装置的制造中，会对基板支撑装置施加热循环来使用。因此，在施加热循环时，需要让绝缘膜119不致产生裂缝。在本实施例中，在1小时内执行从常温40℃升温至250℃再从250℃降温至40℃的一个循环，并进行共计60个循环的热循环试验来评 价绝缘膜119。评价中采用了在喷镀中的工作温度分别为80℃、150℃、250℃下形成于平板部110的绝缘膜119。绝缘膜119是通过陶瓷喷镀形成250μm～300μm的喷镀膜，再通过研磨加工成为100μm～150μm的膜厚。 
表2中表示以喷镀中的工作温度为80℃而形成的绝缘膜119的试验结果，表3表示150℃下的结果，表4表示250℃下的结果。 
［表2］ 
Figure BDA00002454132800111
［表3］ 
Figure BDA00002454132800112
［表4］ 
Figure BDA00002454132800113
在80℃下喷镀的基材在250℃的循环试验下，因热应力的影响而以平板部110的拐角部为起点发生了裂缝。另一方面，在150℃下喷镀的平板部110，虽然推测升温至250℃时会产生热应力，但还不至于发生裂缝。在250℃下喷镀的平板部110，与在150℃下喷镀的平板部110相同，并未发生裂缝。由于平板部110的拐角部的R值越大越能缓和应力，故推测在R＞0.5mm的情况下也不会发生裂缝。因此，对于300mm的晶片基材（φ330mm左右）的平板部110，如果在平板部110的R值为0.5mm以上，且喷镀时的平板部110的工作温度为150℃以上的条件下进行施工，则在250～40℃×60循环的范围内不会发生裂缝。 

Claims (8)

1.一种基板支撑装置，其特征在于具备：
平板部，其由金属形成；
轴部，其连接于所述平板部且由金属形成；
发热体，其配置于所述平板部的内部；以及
绝缘膜，其通过陶瓷喷镀形成于与所述平板部的所述轴部相对置的第一面上。
2.根据权利要求1所述的基板支撑装置，其特征在于：还具有在与所述平板部的第一面大体垂直的第二面上形成的绝缘膜。
3.根据权利要求2所述的基板支撑装置，其特征在于：在所述平板部的所述第一面与所述第二面的拐角部具有倒角或曲率，和/或从所述平板部的第二面朝向与所述轴部连接的所述平板部的第三面具有倒角或曲率。
4.根据权利要求3所述的基板支撑装置，其特征在于：在所述平板部的所述第一面与所述第二面的拐角部具有0.5mm以上的倒角或曲率半径，和/或从所述平板部的第二面朝向与所述轴部连接的所述平板部的第三面具有0.5mm以上的倒角或曲率半径。
5.根据权利要求3所述的基板支撑装置，其特征在于：从所述平板部的第二面朝向与所述轴部连接的所述平板部的第三面具有与所述平板部的板厚大致等值的曲率半径。
6.根据权利要求2～4中任一项所述的基板支撑装置，其特征在于：所述第三面还具备绝缘膜。
7.根据权利要求2～6中任一项所述的基板支撑装置，其特征在于：所述平板部的第一面具有凹部，所述第一面的凹部的拐角部具有0.5mm以上的倒角或曲率半径。
8.根据权利要求1～7中任一项所述的基板支撑装置，其特征在于：所述绝缘膜是通过以成为在基板支撑装置的实际使用温度下不发生裂纹的残余应力的工作温度被喷镀于所述平板部上而形成的。
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US20130134148A1 (en) 2013-05-30
KR102056949B1 (ko) 2019-12-17
TWI621204B (zh) 2018-04-11
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US10276410B2 (en) 2019-04-30
KR20130058632A (ko) 2013-06-04

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