CN103011049A - 制造提供气隙控制的微机电***装置的方法 - Google Patents
制造提供气隙控制的微机电***装置的方法 Download PDFInfo
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Abstract
本发明提供用于控制光调制装置的两个层之间的腔的深度的方法和设备。一种制造光调制装置的方法包括:提供衬底;在所述衬底的至少一部分上方形成牺牲层;在所述牺牲层的至少一部分上方形成反射层;以及在所述衬底上方形成一个或一个以上挠曲控制器,所述挠曲控制器经配置以可操作地支撑所述反射层,且在移除所述牺牲层时,形成深度可测量地不同于所述牺牲层的厚度的腔,其中垂直于所述衬底测量所述深度。
Description
本申请是申请日为2006年6月30日,发明名称为“制造提供气隙控制的微机电***装置的方法”,申请号为200780024852.2的发明专利申请的分案申请。
技术领域
本发明涉及用作干涉式调制器的微机电***。更明确地说,本发明涉及制造在可移动元件与衬底之间具有不同大小腔的微机电***装置的改进方法。
背景技术
微机电***(MEMS)包含微机械元件、激活器和电子元件。可使用沉积、蚀刻和或其它蚀刻掉衬底和/或已沉积材料层的部分或者添加层以形成电装置和机电装置的微加工工艺来产生微机械元件。一种类型的MEMS装置称为干涉式调制器。如本文所使用,术语干涉式调制器或干涉式光调制器指的是一种使用光学干涉原理选择性地吸收且/或反射光的装置。在某些实施例中,干涉式调制器可包括一对导电板,其中之一或两者可能整体或部分透明且/或具有反射性,且能够在施加适当电信号时进行相对运动。在特定实施例中,一个板可包括沉积在衬底上的固定层,且另一个板可包括通过气隙与固定层分离的金属薄膜。如本文更详细描述,一个板相对于另一个板的位置可改变入射在干涉式调制器上的光的光学干涉。这些装置具有广范围的应用,且在此项技术中,利用且/或修改这些类型装置的特性使得其特征可被发掘用于改进现有产品和创建尚未开发的新产品,将是有益的。
发明内容
一实施例提供一种制造至少两个类型的微机电***(MEMS)装置的方法,所述至少两个类型的MEMS装置在移除牺牲材料之后具有不同的释放状态,所述方法包括:提供衬底;在所述衬底的至少一部分上方形成第一导电层;在所述第一导电层的至少一部分上方形成第一牺牲层;在所述第一牺牲层上方形成多个导电可移动元件,且在所述衬底上方形成多个挠曲控制器,所述挠曲控制器经配置以在移除所述牺牲层时可操作地支撑所述导电可移动元件,且其中所述第一牺牲层是可移除的,以借此释放所述MEMS装置且在所述第一导电层与所述可移动元件之间形成具有至少两个间隙大小的腔。
另一实施例提供一种制造至少两个类型的干涉式调制器的方法,所述至少两个类型的干涉式调制器在移除牺牲材料之后具有不同的腔深度,所述方法包括:提供衬底;在所述衬底的至少一部分上方形成光学堆叠;在所述光学堆叠的至少一部分上方形成第一牺牲材料,其中所述牺牲材料是可移除的,以借此形成腔;在所述第一牺牲材料的部分上方形成第二导电层;以及在所述衬底上方形成至少两个类型的挠曲控制器,所述挠曲控制器经配置以可操作地支撑所述第二导电层,其中所述至少两个类型的挠曲控制器包含不同大小的组件,所述不同大小的组件经配置以在移除所述第一牺牲层之后,在所述第二导电层的部分下方形成不同深度的腔。
另一实施例提供一种微机电***(MEMS)装置,其包括:衬底;多个可移动元件,其在所述衬底上方,每一可移动元件通过腔而与所述衬底分离;以及多个挠曲控制器,其在所述衬底上方,所述多个挠曲控制器经配置以可操作地支撑所述可移动元件,其中所述多个挠曲控制器包含具有不同尺寸的部分以控制所选择的挠曲。所述所选择的挠曲用以在所述衬底与所述多个可移动元件之间形成具有至少两个间隙大小的腔。
另一实施例提供一种控制在包括一个或一个以上薄膜层的装置的两个层之间的腔的深度的方法,所述方法包括:提供衬底;在所述衬底的至少一部分上方形成牺牲层;在所述牺牲层的至少一部分上方形成第一层;以及在所述衬底上方形成一个或一个以上挠曲控制器,所述挠曲控制器经配置以可操作地支撑所述第一层,且在移除所述牺牲层时形成深度大于所述牺牲层的深度约30%或30%以上的腔,其中垂直于所述衬底而测量所述深度。
另一实施例提供一种未释放微机电***(MEMS)装置,其包括:衬底;牺牲层,其在所述衬底的至少一部分上方;可移动元件,其在所述第一牺牲层上方;以及一个或一个以上挠曲控制器,其在所述衬底上方,所述一个或一个以上挠曲控制器经配置以可操作地支撑所述可移动元件,且在移除所述牺牲层时,在所述衬底与所述可移动元件之间形成深度大于所述牺牲层的深度约30%或30%以上的腔,其中垂直于所述衬底而测量所述深度,所述牺牲层可通过蚀刻移除。
另一实施例提供一种控制在包含一个或一个以上薄膜层的装置的两个层之间的腔的深度的方法,所述方法包括:提供衬底;在所述衬底的至少一部分上方形成牺牲层,所述牺牲层可通过蚀刻移除;在所述牺牲层的至少一部分上方形成第一薄膜层;以及在所述衬底上方形成一个或一个以上挠曲控制器,所述挠曲控制器经配置以可操作地支撑所述第一薄膜层,且在移除所述牺牲层时使所述薄膜层朝向所述衬底移位。
另一实施例提供一种未释放微机电***(MEMS)装置,所述装置包括:衬底;牺牲层,其在所述衬底的至少一部分上方;可移动元件,其在所述第一牺牲层上方;和一个或一个以上挠曲控制器,其在所述衬底上方,所述一个或一个以上挠曲控制器经配置以可操作地支撑所述可移动元件,且在移除所述牺牲层时使所述可移动元件朝向所述衬底移位,所述牺牲层可通过蚀刻移除。
附图说明
图1是描绘干涉式调制器显示器的一个实施例的一部分的等角视图,其中第一干涉式调制器的可移动反射层处于松弛位置,且第二干涉式调制器的可移动反射层处于激活位置。
图2是说明并入有3×3干涉式调制器显示器的电子装置的一个实施例的***框图。
图3是图1的干涉式调制器的一个示范性实施例的可移动镜位置对所施加电压的图。
图4是可用于驱动干涉式调制器显示器的一组行和列电压的说明。
图5A说明在图2的3×3干涉式调制器显示器中的显示数据的一示范性帧。
图5B说明可用于写入图5A的帧的行和列信号的一示范性时序图。
图6A和6B是说明包括多个干涉式调制器的视觉显示器装置的实施例的***框图。
图7A是图1的装置的横截面。
图7B是干涉式调制器的替代实施例的横截面。
图7C是干涉式调制器的另一替代实施例的横截面。
图7D是干涉式调制器的又一替代实施例的横截面。
图7E是干涉式调制器的额外替代实施例的横截面。
图8是说明在制造干涉式调制器的方法的实施例中的某些步骤的流程图。
图9A到图9G是说明在制造具有柱支撑结构的干涉式调制器的过程中的某些步骤的示意性横截面。
图10A到图10D是说明在制造具有铆钉支撑结构的干涉式调制器的过程中的某些步骤的示意性横截面。
图11是说明在制造具有挠曲控制器的干涉式调制器的一实施例中的某些步骤的流程图。
图12A到图12K展示具有可使用图11的方法而制造的不同挠曲控制器的干涉式调制器的替代实施例的横截面。
图13A到图13F展示经设计以展示在释放装置时,改变挠曲控制器结构的特征可对支撑层的偏转具有的影响的分析研究的结果。
具体实施方式
以下详细描述针对本发明的某些特定实施例。然而,本发明可以许多不同方式实施。在本描述内容中参看了附图,附图中所有相同部分用相同标号表示。如从以下描述中将了解,所述实施例可实施在经配置以显示不论运动(例如,视频)还是固定(例如,静止图像)的且不论文字还是图画的图像的任何装置中。更明确地说,预期所述实施例可实施在多种电子装置中或与多种电子装置关联,所述多种电子装置例如(但不限于)移动电话、无线装置、个人数据助理(PDA)、手提式或便携式计算机、GPS接收器/导航器、相机、MP3播放器、摄像机、游戏控制台、手表、时钟、计算器、电视监视器、平板显示器、计算机监视器、汽车显示器(例如,里程表显示器等)、座舱控制器和/或显示器、相机视图的显示器(例如,车辆中后视相机的显示器)、电子相片、电子广告牌或指示牌、投影仪、建筑结构、包装和美学结构(例如,对于一件珠宝的图像的显示器)。具有与本文中描述的装置类似的结构的MEMS装置也可用于例如电子切换装置的非显示器应用中。
一实施例提供在衬底上制造具有多个挠曲控制器的MEMS装置的方法。所述挠曲控制器经配置以可操作地支撑导电可移动元件,且在移除牺牲层时提供多个所选挠曲。可移除牺牲层,以借此释放MEMS装置且形成具有至少两个间隙大小的腔。挠曲控制器可实现间隙大小的增加和间隙大小的减小。结果,多个沉积、遮蔽和蚀刻步骤可由较少沉积、遮蔽和蚀刻步骤替代,因此在MEMS装置的制造中节约时间和金钱。
图1中说明包括干涉式MEMS显示器元件的一个干涉式调制器显示器的实施例。在这些装置中,像素处于明亮状态或黑暗状态。在明亮(“接通”或“开启”)状态下,显示器元件将入射可见光的大部分反射到用户。当在黑暗(“断开”或“关闭”)状态下时,显示器元件将极少的入射可见光反射到用户。依据实施例而定,可颠倒“接通”和“断开”状态的光反射性质。MEMS像素可经配置而主要在选定的颜色处反射,从而允许除了黑白显示以外的彩色显示。
图1是描述视觉显示器的一系列像素中的两个相邻像素的等角视图,其中每一像素包括MEMS干涉式调制器。在一些实施例中,干涉式调制器显示器包括这些干涉式调制器的一行/列阵列。每一干涉式调制器包含一对反射层,其定位成彼此相距可变且可控制的距离以形成具有至少一个可变尺寸的谐振光学腔。在一个实施例中,可在两个位置之间移动所述反射层之一。在第一位置(本文中称为松弛位置)中,可移动反射层定位成距固定部分反射层相对较大的距离。在第二位置(本文中称为激活位置)中,可移动反射层定位成更紧密邻近所述部分反射层。视可移动反射层的位置而定,从所述两个层反射的入射光相长地或相消地进行干涉,从而为每一像素产生全反射状态或非反射状态。
图1中像素阵列的所描绘部分包含两个相邻干涉式调制器12a和12b。在左侧干涉式调制器12a中,说明可移动反射层14a处于距包含部分反射层的光学堆叠16a预定距离处的松弛位置中。在右侧干涉式调制器12b中,说明可移动反射层14b处于邻近于光学堆叠16b的激活位置中。
如本文所引用的光学堆叠16a和16b(统称为光学堆叠16)通常包括若干熔合层(fused layer),所述熔合层可包含例如氧化铟锡(ITO)的电极层、例如铬的部分反射层和透明电介质。因此,光学堆叠16是导电的、部分透明且部分反射的,且可通过(例如)将上述层的一者或一者以上沉积到透明衬底20上来制造。部分反射层可由例如各种金属、半导体和电介质等部分反射的多种材料形成。部分反射层可由一个或一个以上材料层形成,且所述层的每一者可由单一材料或材料的组合形成。
在一些实施例中,光学堆叠的层经图案化成为多个平行条带,且如下文中进一步描述,可在显示器装置中形成行电极。可移动反射层14a、14b可形成为沉积金属层(一层或多层)的一系列平行条带(与行电极16a、16b垂直),所述金属层沉积在柱18和沉积于柱18之间的介入牺牲材料的顶部上。当蚀刻移除牺牲材料时,可移动反射层14a、14b通过所界定的间隙19而与光学堆叠16a、16b分离。例如铝的高度导电且反射的材料可用于反射层14,且这些条带可在显示器装置中形成列电极。
在不施加电压的情况下,腔19保留在可移动反射层14a与光学堆叠16a之间,其中可移动反射层14a处于机械松弛状态,如图1中像素12a所说明。然而,当将电位差施加到选定的行和列时,形成在相应像素处的行电极与列电极的交叉处的电容器变得带电,且静电力将所述电极拉在一起。如果电压足够高,那么可移动反射层14变形且被迫抵靠光学堆叠16。光学堆叠16内的电介质层(在此图中未图示)可防止短路并控制层14与16之间的分离距离,如图1中右侧的像素12b所说明。不管所施加的电位差的极性如何,表现均相同。以此方式,可控制反射像素状态对非反射像素状态的行/列激活在许多方面类似于常规LCD和其它显示技术中所使用的行/列激活。
图2到5B说明在显示器应用中使用干涉式调制器阵列的一个示范性工艺和***。
图2是说明可并入有本发明各方面的电子装置的一个实施例的***方框图。在所述示范性实施例中,所述电子装置包含处理器21,其可为任何通用单芯片或多芯片微处理器(例如ARM、PentiumPentiumPentium Pro、8051、Power),或任何专用微处理器(例如数字信号处理器、微控制器或可编程门阵列)。如此项技术中常规的做法,处理器21可经配置以执行一个或一个以上软件模块。除了执行操作***外,所述处理器可经配置以执行一个或一个以上软件应用程序,包含网络浏览器、电话应用程序、电子邮件程序或任何其它软件应用程序。
在一个实施例中,处理器21还经配置以与阵列驱动器22连通。在一个实施例中,所述阵列驱动器22包含将信号提供到显示器阵列或面板30的行驱动器电路24和列驱动器电路26。在图2中以线1-1展示图1中说明的阵列的横截面。对于MEMS干涉式调制器来说,行/列激活协议可利用图3中说明的这些装置的滞后性质。可能需要(例如)10伏的电位差来促使可移动层从松弛状态变形为激活状态。然而,当电压从所述值减小时,可移动层在电压降回10伏以下时维持其状态。在图3的示范性实施例中,可移动层直到电压降到2伏以下时才完全松弛。因此,在图3中说明的实例中存在约3到7V的电压范围,其中存在所施加电压的窗口,在所述窗口内装置在松弛状态或激活状态中均是稳定的。此窗口在本文中称为“滞后窗口”或“稳定窗口”。对于具有图3的滞后特性的显示器阵列来说,可设计行/列激活协议使得在行选通期间,已选通行中待激活的像素暴露于约10伏的电压差,且待松弛的像素暴露于接近零伏的电压差。在选通之后,所述像素暴露于约5伏的稳态电压差使得其维持在行选通使其所处的任何状态中。在此实例中,每一像素在被写入之后经历3-7伏的“稳定窗口”内的电位差。此特征使图1中说明的像素设计在相同的施加电压条件下在激活或松弛预存在状态下均是稳定的。因为干涉式调制器的每一像素(不论处于激活还是松弛状态)本质上是由固定反射层和移动反射层形成的电容器,所以可在滞后窗口内的一电压下维持此稳定状态而几乎无功率消耗。本质上,如果所施加的电压是固定的,那么没有电流流入像素中。
在典型应用中,可通过根据第一行中所需组的激活像素确认所述组列电极来产生显示帧。接着将行脉冲施加到行1电极,从而激活对应于所确认的列线的像素。接着改变所述组已确认列电极以对应于第二行中所需组的激活像素。接着将脉冲施加到行2电极,从而根据已确认的列电极而激活行2中的适当像素。行1像素不受行2脉冲影响,且维持在其在行1脉冲期间被设定的状态中。可以连续方式对整个系列的行重复此过程以产生帧。通常,通过以每秒某一所需数目的帧的速度连续地重复此过程来用新的显示数据刷新且/或更新所述帧。用于驱动像素阵列的行和列电极以产生显示帧的广泛种类的协议也是众所周知的且可结合本发明使用。
图4、5A和5B说明用于在图2的3×3阵列上形成显示帧的一个可能的激活协议。图4说明可用于使像素展示出图3的滞后曲线的一组可能的列和行电压电平。在图4实施例中,激活像素涉及将适当列设定为-Vbias,且将适当行设定为+ΔV,其分别可对应于-5伏和+5伏。松弛像素是通过将适当列设定为+Vbias,且将适当行设定为相同的+ΔV,从而在像素上产生零伏电位差而实现的。在行电压维持在零伏的那些行中,不管列处于+Vbias还是-Vbias,像素在任何其最初所处的状态中均是稳定的。同样如图4中所说明,将了解,可使用具有与上述电压的极性相反的极性的电压,例如,激活像素可涉及将适当列设定为+Vbias,且将适当行设定为-ΔV。在此实施例中,释放像素是通过将适当列设定为-Vbias,且将适当行设定为相同的-ΔV,从而在像素上产生零伏电位差而实现的。
图5B是展示施加到图2的3×3阵列的一系列行和列信号的时序图,所述系列的行和列信号将产生图5A中说明的显示器布置,其中被激活像素为非反射的。在对图5A中说明的帧进行写入之前,像素可处于任何状态,且在本实例中所有行均处于0伏,且所有列均处于+5伏。在这些所施加的电压的情况下,所有像素在其既有的激活或松弛状态中均是稳定的。
在图5A的帧中,像素(1,1)、(1,2)、(2,2)、(3,2)和(3,3)被激活。为了实现此目的,在行1的“线时间(line time)”期间,将列1和2设定为-5伏,且将列3设定为+5伏。因为所有像素均保留在3-7伏的稳定窗口中,所以这并不改变任何像素的状态。接着用从0升到5伏且返回零的脉冲选通行1。这激活了(1,1)和(1,2)像素且松弛了(1,3)像素。阵列中其它像素均不受影响。为了视需要设定行2,将列2设定为-5伏,且将列1和3设定为+5伏。施加到行2的相同选通接着将激活像素(2,2)且松弛像素(2,1)和(2,3)。同样,阵列中其它像素均不受影响。通过将列2和3设定为-5伏且将列1设定为+5伏来类似地设定行3。行3选通设定行3像素,如图5A中所示。在对帧进行写入之后,行电位为零,且列电位可维持在+5或-5伏,且接着显示器在图5A的布置中是稳定的。将了解,可将相同程序用于数十或数百个行和列的阵列。还将应了解,用于执行行和列激活的电压的时序、序列和电平可在上文所概述的一般原理内广泛变化,且上文的实例仅为示范性的,且任何激活电压方法均可与本文描述的***和方法一起使用。
图6A和6B是说明显示器装置40的实施例的***方框图。显示器装置40可为(例如)蜂窝式电话或移动电话。然而,显示器装置40的相同组件或其稍微变化形式也说明例如电视和便携式媒体播放器的各种类型的显示器装置。
显示器装置40包含外壳41、显示器30、天线43、扬声器45、输入装置48和麦克风46。外壳41通常由所属领域的技术人员众所周知的多种制造工艺的任一者形成,所述工艺包含注射模制和真空成形。另外,外壳41可由多种材料的任一者制成,所述材料包含(但不限于)塑料、金属、玻璃、橡胶和陶瓷,或其组合。在一个实施例中,外壳41包含可移除部分(未图示),所述可移除部分可与其它具有不同颜色或含有不同标记、图画或符号的可移除部分互换。
如本文中所描述,示范性显示器装置40的显示器30可为包含双稳态显示器(bi-stable display)在内的多种显示器的任一者。在其它实施例中,如所属领域的技术人员众所周知,显示器30包含例如如上所述的等离子、EL、OLED、STN LCD或TFT LCD的平板显示器,或例如CRT或其它电子管装置的非平板显示器。然而,出于描述本实施例的目的,如本文中所描述,显示器30包含干涉式调制器显示器。
图6B中示意说明示范性显示器装置40的一个实施例的组件。所说明的示范性显示器装置40包含外壳41且可包含至少部分封围在所述外壳41中的额外组件。举例来说,在一个实施例中,示范性显示器装置40包含网络接口27,所述网络接口27包含耦合到收发器47的天线43。收发器47连接到处理器21,处理器21连接到调节硬件52。调节硬件52可经配置以调节信号(例如,对信号进行滤波)。调节硬件52连接到扬声器45和麦克风46。处理器21也连接到输入装置48和驱动器控制器29。驱动器控制器29耦合到帧缓冲器28且耦合到阵列驱动器22,所述阵列驱动器22进而耦合到显示器阵列30。根据特定示范性显示器装置40设计的要求,电源50将功率提供到所有组件。
网络接口27包含天线43和收发器47使得示范性显示器装置40可经由网络与一个或一个以上装置通信。在一个实施例中,网络接口27也可具有某些处理能力以减轻对处理器21的要求。天线43是所属领域的技术人员已知的用于传输和接收信号的任何天线。在一个实施例中,所述天线根据IEEE 802.11标准(包含IEEE 802.11(a)、(b)或(g))来传输和接收RF信号。在另一实施例中,所述天线根据BLUETOOTH标准来传输和接收RF信号。在蜂窝式电话的情况下,所述天线经设计以接收CDMA、GSM、AMPS或其它用于在无线手机网络内通信的已知信号。收发器47预处理从天线43接收到的信号,使得处理器21可接收所述信号并进一步对所述信号进行处理。收发器47还处理从处理器21接收到的信号使得可经由天线43从示范性显示器装置40传输所述信号。
在一替代实施例中,收发器47可由接收器代替。在又一替代实施例中,网络接口27可由可存储或产生待发送到处理器21的图像数据的图像源代替。举例来说,所述图像源可为存储器装置,例如数字视频光盘(DVD)或含有图像数据的硬盘驱动器,或产生图像数据的软件模块。
处理器21大体上控制示范性显示器装置40的全部操作。处理器21接收例如来自网络接口27或图像源的压缩图像数据的数据,并将所述数据处理成原始图像数据或处理成易被处理成原始图像数据的格式。处理器21接着将已处理的数据发送到驱动器控制器29或发送到帧缓冲器28以供存储。原始数据通常是指识别图像内每一位置处的图像特性的信息。举例来说,这些图像特性可包含颜色、饱和度和灰度级。
在一个实施例中,处理器21包含微控制器、CPU或逻辑单元以控制示范性显示器装置40的操作。调节硬件52通常包含放大器和滤波器,以用于将信号传输到扬声器45,且用于从麦克风46接收信号。调节硬件52可为示范性显示器装置40内的离散组件,或可并入在处理器21或其它组件内。
驱动器控制器29直接从处理器21或从帧缓冲器28取得由处理器21产生的原始图像数据,并适当地重新格式化所述原始图像数据以供高速传输到阵列驱动器22。具体来说,驱动器控制器29将原始图像数据重新格式化为具有类似光栅的格式的数据流,使得其具有适于在显示器阵列30上进行扫描的时间次序。接着,驱动器控制器29将已格式化的信息发送到阵列驱动器22。尽管驱动器控制器29(例如LCD控制器)通常与***处理器21关联而作为独立的集成电路(IC),但可以许多方式实施这些控制器。其可作为硬件嵌入处理器21中,作为软件嵌入处理器21中,或与阵列驱动器22完全集成在硬件中。
通常,阵列驱动器22从驱动器控制器29接收已格式化的信息且将视频数据重新格式化为一组平行波形,所述波形以每秒多次的速度被施加到来自显示器的x-y像素矩阵的数百且有时数千个引线。
在一个实施例中,驱动器控制器29、阵列驱动器22和显示器阵列30适用于本文描述的任意类型的显示器。举例来说,在一个实施例中,驱动器控制器29是常规显示器控制器或双稳态显示器控制器(例如,干涉式调制器控制器)。在另一实施例中,阵列驱动器22是常规驱动器或双稳态显示器驱动器(例如,干涉式调制器显示器)。在一个实施例中,驱动器控制器29与阵列驱动器22集成。此实施例在例如蜂窝式电话、手表和其它小面积显示器的高度集成***中是普遍的。在又一实施例中,显示器阵列30是典型的显示器阵列或双稳态显示器阵列(例如,包含干涉式调制器阵列的显示器)。
输入装置48允许用户控制示范性显示器装置40的操作。在一个实施例中,输入装置48包含例如QWERTY键盘或电话键区的键区、按钮、开关、触敏屏幕、或者压敏或热敏薄膜。在一个实施例中,麦克风46是用于示范性显示器装置40的输入装置。当使用麦克风46将数据输入到所述装置时,用户可提供声音命令以便控制示范性显示器装置40的操作。
电源50可包含此项技术中众所周知的多种能量存储装置。举例来说,在一个实施例中,电源50是例如镍镉电池或锂离子电池的可再充电电池。在另一实施例中,电源50是可再生能源、电容器或太阳能电池,包含塑料太阳能电池和太阳能电池涂料。在另一实施例中,电源50经配置以从壁式插座接收功率。
在某些实施方案中,如上文中所描述,控制可编程性驻存在驱动器控制器中,所述驱动器控制器可位于电子显示器***中的若干位置中。在某些情况中,控制可编程性驻存在阵列驱动器22中。所属领域的技术人员将了解,上述优化可实施在任何数目的硬件和/或软件组件中且可以各种配置实施。
根据上文陈述的原理而操作的干涉式调制器的结构的细节可广泛变化。举例来说,图7A-7E说明可移动反射层14及其支撑结构的五个不同实施例。图7A是图1的实施例的横截面,其中金属材料条带14沉积在垂直延伸的支撑件18上。在图7B中,可移动反射层14在系链(tether)32上仅在隅角处附接到支撑件。在图7C中,可移动反射层14从可包括柔性金属的可变形层34悬置下来。所述可变形层34直接或间接地连接到围绕可变形层34的周边的衬底20。这些连接在本文中称为支柱。图7D中说明的实施例具有支柱插塞42,可变形层34搁置在所述支柱插塞42上。如图7A-7C所示,可移动反射层14保持悬置在隙上方,但可变形层34并不通过填充可变形层34与光学堆叠16之间的孔而形成所述支柱。而是,支柱由平坦化材料形成,所述平坦化材料用以形成支柱插塞42。图7E中说明的实施例是基于图7D中展示的实施例,但也可适于与图7A-7C中说明的实施例以及未图示的额外实施例的任一者一起发挥作用。在图7E中所示的实施例中,已使用金属或其它导电材料的额外层来形成总线结构44。这允许信号沿着干涉式调制器的背面进行路由,从而消除许多原本可能必须形成在衬底20上的电极。
在例如图7中所示的那些实施例的实施例中,干涉式调制器充当直接观看装置,其中从透明衬底20的前侧观看图像,所述侧与上面布置有调制器的一侧相对。在这些实施例中,反射层14以光学方式遮蔽在反射层的与衬底20相对侧的干涉式调制器的部分,其包含可变形层34。这允许对遮蔽区域进行配置和操作而不会消极地影响图像质量。这种遮蔽允许实现图7E中的总线结构44,所述总线结构44提供使调制器的光学性质与调制器的机电性质(例如,寻址与由所述寻址导致的移动)分离的能力。这种可分离的调制器结构允许选择用于调制器的机电方面和光学方面的结构设计和材料且使其彼此独立而发挥作用。此外,图7C-7E中所示的实施例具有源自反射层14的光学性质与其机械性质脱离的额外益处,所述益处由可变形层34执行。这允许用于反射层14的结构设计和材料在光学性质方面得以优化,且用于可变形层34的结构设计和材料在所要的机械性质方面得以优化。
图8为说明在用于干涉式调制器的制造过程800的一实施例中的某些步骤的流程图。所述步骤连同在图8中未图示的其它步骤可存在于用于制造(例如)在图1和图7中说明的一般类型的干涉式调制器的过程中。参看图1、图7和图8,过程800开始于步骤805处,其中在衬底20上方形成光学堆叠16。衬底20可为透明衬底(例如玻璃或塑料),且可已经受预先制备步骤(例如,清洗)以促进光学堆叠16的有效形成。如上文所论述,光学堆叠16是导电、部分透明且部分反射的,且可(例如)通过将一个或一个以上层沉积到透明衬底20上而制造。在某些实施例中,所述层可图案化为平行条带,且可形成显示器装置中的行电极。在某些实施例中,光学堆叠16包括在一个或一个以上金属层(例如,反射层和/或导电层)上方沉积的绝缘层或电介质层。
在图8中说明的过程800在步骤810处继续,在步骤810,在光学堆叠16上方形成牺牲层。随后移除牺牲层(例如,在步骤825处)以如下文所论述形成腔19,且因此牺牲层未在图1和图7中所说明的所得干涉式调制器12中展示。牺牲层在光学堆叠16上的形成可包括以经选择以在随后移除之后提供具有所要大小的腔19的厚度沉积XeF2可蚀刻材料(例如钼或非晶硅)。使用例如物理气相沉积(PVD,例如溅射)、等离子增强化学气相沉积(PECVD)、热化学气相沉积(热CVD)或旋涂的沉积技术,可进行牺牲材料的沉积。
在图8中说明的过程800在步骤815处继续,在步骤815,形成支撑结构(例如,在图1和图7中说明的柱18或下文论述的铆钉)。柱18的形成可包括以下步骤:图案化牺牲层以形成支撑结构孔隙,接着使用例如PECVD、热CVD或旋涂的沉积方法将材料(例如,聚合物或二氧化硅)沉积到所述孔隙中以形成柱18。在某些实施例中,在牺牲层中形成的支撑结构孔隙穿过牺牲层和光学堆叠16两者延伸到下伏衬底20,以使得柱18的下端接触衬底20,如图7A中所说明。在其它实施例中,在牺牲层中形成的孔隙延伸穿过牺牲层,但未穿过光学堆叠16。举例来说,图7C说明支柱插塞42的与光学堆叠16接触的下端。下文给出针对柱和铆钉的形成而提供的其它实施例的更详细论述。
在图8中说明的过程800在步骤820处继续,在步骤820,形成可移动反射层(例如在图1和图7中说明的可移动反射层14)。通过使用一个或一个以上沉积步骤(例如,反射层(例如铝、铝合金)沉积)连同一个或一个以上图案化、掩蔽和/或蚀刻步骤,可形成可移动反射层14。如上文所论述,可移动反射层14通常是导电的,且本文可将其称为导电层。因牺牲层仍存在于在过程800的步骤820处形成的部分制成的干涉式调制器中,所以在此阶段,可移动反射层14通常并不可移动。本文可将含有牺牲层的部分制成的干涉式调制器称为“未释放”干涉式调制器。
在图8中说明的过程800在步骤825处继续,在步骤825,形成腔(例如,在图1和图7中说明的腔19)。通过将牺牲材料(在步骤810处所沉积)暴露于蚀刻剂,可形成腔19。举例来说,通过干式化学蚀刻(例如,通过将牺牲层暴露于气态或蒸气蚀刻剂(例如从固态二氟化氙(XeF2)产生的蒸气)一段可有效移除所要材料量的时间,所述时间通常相对于腔19周围的结构而选择),可移除例如钼或非晶硅等可蚀刻牺牲材料。还可使用例如湿式蚀刻和/或等离子蚀刻等其它蚀刻方法。因在过程800的步骤825期间移除牺牲层,所以在此阶段之后,可移动反射层14通常为可移动的。在移除牺牲材料之后,所得完全或部分制成的干涉式调制器在本文中可称为“已释放”干涉式调制器。
在一个实施例中,支撑结构可采用在可移动层下方的柱结构(例如,在图1和图7中展示的柱18)的形式。参看图9A到图9G论述用于制造包含支柱的干涉式调制器的示范性过程。在多个实施例中,制造干涉式调制器包含在衬底上形成光学堆叠,所述衬底可为透光衬底,且在其它实施例中为透明衬底。光学堆叠可包含:导电层,其在衬底上或邻近衬底形成电极层;部分反射层,其反射一些入射光,同时允许一些光到达干涉式调制器元件的其它组件;和电介质层,其使下伏电极层与干涉式调制器的其它组件绝缘。在图9A中,可见提供透明衬底100,且导电层102和部分反射层104沉积于衬底100上方。接着,在部分反射层104上方沉积电介质层106。在某些实施例中,导电层102是透明的且包含ITO,部分反射层104包含半反射厚度的金属(例如铬(Cr)),且电介质层106包含二氧化硅(SiO2)。电介质层还可为包含SiO2和Al2O3的堆叠。在此过程期间的某点处,至少图案化导电层102(未图示)以形成将用于寻址干涉式调制器行的行电极。在一个实施例中,此图案化在沉积导电层102和部分反射层104之后,但在沉积电介质层106之前发生。将层102、104和106的组合称为光学堆叠110,且可出于方便起见在随后图式中由单个层指示。应了解,光学堆叠110的组合物可在层的数目和那些层的组分上发生改变,且上文论述的层仅为示范性的。
可使用多种方法来执行关于本文所揭示的各种实施例而论述的图案化和蚀刻工艺。所用蚀刻可为干式蚀刻或湿式蚀刻,且可为各向同性或各向异性的。合适干式蚀刻剂包括(但不限于):SF6/O2、CHF3/O2、SF2/O2、CF4/O2和NF3/O2。通常,所述蚀刻剂适于蚀刻SiOx、SiNx、SiOxNy、旋涂式玻璃、尼桑(Nissan)硬涂层和TaOx中的一者或一者以上,但此工艺还可蚀刻其它材料。抵抗所述蚀刻剂中的一者或一者以上且因此可用作蚀刻阻挡层的材料包括(但不限于)Al、Cr、Ni和Al2O3。此外,包括(但不限于)PAD蚀刻剂、BHF、KOH和磷酸的湿式蚀刻剂可用于本文描述的工艺中。通常,所述蚀刻可为各向同性的,但通过使用反应性离子蚀刻(RIE)(通过离子化蚀刻化学品且将离子注射于衬底处而实现),可使其成为各向异性的。图案化可包含接着用于形成掩模的光致抗蚀剂(PR)层(正或负光致抗蚀剂)的沉积。或者,可利用硬掩模。在某些实施例中,硬掩模可包含金属或SiNx,但应了解,硬掩模的组合物可视待蚀刻的下伏材料和待使用的蚀刻剂的选择性而定。通常使用接着被移除的PR层来图案化硬掩模,且硬掩模用作用于蚀刻下伏层的掩模。当使用湿式蚀刻时,或无论何时在PR掩模无法处理的条件下(例如在高温下,或当使用氧基蚀刻剂时)而经由掩模处理时,硬掩模的使用可为尤其有利的。还可利用移除层的替代方法,例如灰化蚀刻或剥离工艺。
在图9B中,可见牺牲材料层112沉积于光学堆叠110上方。在一实施例中,此牺牲层112包含钼(Mo),但在其它实施例中,牺牲层112可包含例如非晶硅(a-Si)的其它材料。在图9C中,牺牲层112已经图案化和蚀刻以形成楔形孔隙114,所述楔形孔隙114对应于柱或支撑区域的位置。可有利地使所述孔隙114成楔形以促进上覆层的连续且共形的沉积。
在图9D中,柱材料层118沉积于图案化牺牲层114上方,使得柱层118还涂布楔形孔隙114的侧壁和基底。在某些实施例中,柱层118可包含氮化硅(SiNx)或SiO2,但可使用多种其它材料。在图9E中,柱层118经图案化和蚀刻以形成柱120。在图9E中可见柱120的边缘优选成楔形,此促进上覆层的连续和共形的沉积(类似于孔隙114的楔形或倾斜的侧壁)。
在图9F中,高反射层122沉积于柱120和牺牲层112的暴露部分上方。接着在高反射层122上方沉积机械层124。出于方便起见,无论何时直接在高反射层122上方沉积机械层124时,则可将高反射层122和机械层124称为(且在随后图中描绘为)可变形反射层130(参看图9G)。在替代实施例中,可变形反射层130可包含具有所要光学和机械性质的单个层。举例来说,用于机械开关的机械或移动层无需包括反射层。因在过程200的此阶段仍存在牺牲层112,所以机械层或可变形反射层130通常尚未可移动。本文可将含有牺牲层(在此实施例中的层112)的部分制成的MEMS装置135(例如,部分制成的干涉式调制器)称为“未释放”MEMS装置。
在图9G中,执行释放蚀刻以移除牺牲层112,进而形成具有干涉式腔19的干涉式调制器元件140,可变形反射层130可经由所述干涉式腔19移动以改变由已释放干涉式调制器元件140反射的颜色。在释放蚀刻之前,可变形反射层130优选经图案化以形成列(未图示),且可有利地经进一步图案化以形成促进释放蚀刻剂进入牺牲层的蚀刻孔(未图示)。
在另一实施例中,支撑结构可采用上覆于机械或可变形反射层130上的铆钉结构的形式。参看图10A到10D论述且描绘用于形成上覆铆钉结构的过程。在一实施例中,此过程包括图9A到图9C的步骤。在图10A中,可见机械层或可变形反射层130沉积有于图案化牺牲层112上方,使得可变形反射层130涂布楔形孔隙114的侧壁和基底。
在图10B中,在可变形反射层130上方沉积铆钉层142。铆钉层142可包含(例如)SiO2、SiNx或Ni,但多种替代材料可用于铆钉层142。接下来,在图10C中,铆钉层经图案化和蚀刻以形成铆钉结构150。因为在过程200的此阶段仍存在牺牲层112,所以机械层或可变形反射层130通常尚未可移动。本文可将含有牺牲层(在此实施例中的层112)的部分制成的MEMS装置135(例如,部分制成的干涉式调制器)称为“未释放”MEMS装置。在图10D中,可见牺牲层112已经由释放蚀刻而移除,从而允许可变形反射层130能够经由已释放干涉式调制器140的干涉式腔19移动。
应了解,经由柱120(图9G)和铆钉150(图10D)的组合可提供额外支撑。举例来说,可在干涉式调制器中的某些位置中形成铆钉150,且可在其它位置处形成柱120,或可将铆钉150形成为上覆于柱120上。
在相对于图9A到图9G而描述的过程中,可见牺牲层112暴露于图案化无机柱120(参看图9E)的蚀刻工艺,且支柱120类似地暴露于移除牺牲层112的释放蚀刻(参看图9G)。除非对工艺流程进行修改,否则支柱材料118相对于牺牲材料应为可选择性蚀刻的,且反之亦然。此外,即使存在相对于一者选择性蚀刻另一者的蚀刻剂,但并不选择性蚀刻的替代蚀刻剂出于其它原因而可为优选的。
由于支撑结构和机械层中不平衡应力,可发生支撑结构和机械层的挠曲。在某些情况下,所述不平衡应力为在形成支撑结构和机械层的材料内的固有应力的结果,其依据包含那些层的材料而变。不平衡应力的额外来源为层的热膨胀,其依据两种不同材料的热膨胀系数之间的失配、MEMS装置的操作温度、材料的弹性模数和材料沉积条件而变。当邻接层具有不同热膨胀系数时,偏转不仅可由邻接层大小的相对改变引起,而且总偏转可由于操作温度而改变。因为所述偏转将改变干涉式腔的高度,且因此影响由干涉式调制器元件反射的颜色,所以需要在制造具有不同腔高度的干涉式调制器元件的过程中考虑此挠曲。在一实施例中,应用单一厚度的牺牲层,而并非对应于多个腔高度而多次沉积牺牲材料,且展现不同挠曲的柱和/或铆钉在释放干涉式调制器时将产生多个腔高度。
图11为说明在制造装置(例如具有腔的MEMS装置)的方法的一实施例中的某些步骤的流程图。所述步骤连同在图11中未图示的其它步骤可存在于用于制造(例如)在图1和图7中说明的一般类型的干涉式调制器的过程中。在图11中的过程的多个步骤类似于在图9和图10中示意性描绘的步骤。图11的过程可用于制造例如在图12A到图12K中描绘的各种未释放和已释放干涉式调制器的MEMS装置。在图12中展示的装置包括挠曲控制器,其将产生多个干涉式腔高度,同时需要较少沉积、掩蔽和蚀刻步骤。参看图9、图10、图11和图12,过程200开始于步骤205处,在步骤205,提供衬底100。在一实施例中,衬底100可包含例如玻璃或塑料的任何透明材料。
过程200在步骤210处继续,在步骤210,在衬底100上形成第一导电层102,如图9A中所示。如上文所述,第一导电层102可为单层结构或多子层结构。
过程200在步骤215处继续,在步骤215,形成一个或一个以上其它层,例如,如图9A中所示的部分反射层104,和在导电层105的至少一部分上方的电介质层106。如图9B和图12中所示,将层102、104和106的组合称为光学堆叠110。
过程200在步骤220处继续,在步骤220,形成如图9B中所示的牺牲层112。在图9、图10和图12A到图12H中,在可变形反射层130(例如,包括高反射层122和机械层124两者)与光学堆叠110之间形成单一牺牲层。在图12I、图12J和图12K中展示的干涉式调制器中,在于步骤225处形成可移动反射层14(包括高反射层122)之前,在光学堆叠110上方形成第一牺牲层112A。在图12I、图12J和图12K中展示的实施例中,可将可移动反射层14视为通过机械层34而悬置于衬底上方的可移动元件。在不会损失一般性的情况下,术语可移动元件在本文中将用于描述在MEMS装置中的任何可移动元件,例如,如图9和图10中所示的可移动或可变形反射层130、如图1和图7中所示的可移动反射层14、14a或14b中的任一者,或如图12I、图12J和图12K中所示的可移动元件14。可通过沉积,接着进行图案化和蚀刻来形成可移动元件14。在形成可移动元件14之后,在可移动元件14上方沉积第二牺牲层112B。可执行对第二牺牲层112B(或单一牺牲层112)的随后图案化和蚀刻,以形成如图9C和图10A中所示的支撑结构孔隙114,以及如图12中所示的用于将机械层34附接到可移动元件14的孔隙。在一优选实施例中,在于可移动反射元件14(如图12中所示)或可变形反射层130(如图9和图10中所示)与衬底之间形成牺牲层112(或112A)的过程中仅执行一次沉积。
在干涉式调制器的一实施例中,牺牲层经沉积以(在随后移除时)在可移动层14或可变形反射层130与图1、图7和图12的光学堆叠16之间形成具有厚度范围为约1000埃到约5000埃的干涉式腔。
在图12I、图12J和图12K中展示的双牺牲层实施例中,过程200在步骤230处继续,在步骤230,在牺牲层112B的至少一部分和可移动元件14的至少一部分上方形成机械层34。在图9和图10中的单一牺牲层实施例中,由在高反射层122上方形成的机械层124替代机械层34。机械层34和124可由相同或不同的材料构成。
所述过程在步骤235处继续,在步骤235,形成挠曲控制器。在图11中展示的示范性过程200中,形成具有不同尺寸的多个挠曲控制器,以在移除牺牲层之后提供多个腔大小。在另一实施例中,形成挠曲控制器,以在移除牺牲层之前提供小于或大于腔的所要腔大小。在移除牺牲层112之后,挠曲控制器(例如,柱结构和/或铆钉结构)引发所述挠曲控制器附接到的隔膜(例如,可变形反射层130)的移位。下文将论述某些示范性挠曲控制器的细节。
过程200在步骤240处继续,在步骤240,移除牺牲层112(例如,通过蚀刻)以形成如图10G中展示的腔19。牺牲层的移除可(例如)通过暴露于蚀刻剂(例如以单独或组合形式的XeF2、F2或HF)而实现。在一优选实施例中,在蚀刻工艺中移除大体上所有牺牲层112。在一实施例中,腔19为在光学堆叠110与可变形反射层130之间的干涉式腔。在形成腔19之后,所得MEMS装置(例如,干涉式调制器)处于“已释放”状态中。
现将论述可在过程200的步骤235处形成的挠曲控制器的某些实例。举例来说,图12A展示未释放装置(例如,干涉式调制器),其包括柱120,所述柱120具有一具有尺寸122、大体上平行于衬底100和可变形反射层130的翼形部分。牺牲层112具有厚度126,如垂直于衬底100和光学堆叠110所测量。图12B展示在移除牺牲层112从而形成腔19之后的装置。图12B的已释放装置具有腔深度128A,如垂直于衬底100和光学堆叠110所测量。在此实例中,在已释放可变形层130与光学堆叠110之间的腔的深度(展示为参考数字128A)可测量地大于在图12A中展示的未释放腔深度126。腔深度差异归因于由柱120与可变形反射层130的组合应力而控制的挠曲。
图12C展示未释放装置(例如,干涉式调制器)的第二实例,其包括柱120,所述柱120具有一具有尺寸124、大体上平行于衬底100和可变形反射层130的翼形部分。在此实例中,牺牲层112具有与在图12A中展示的装置大致相同的厚度126,如垂直于衬底100和光学堆叠110所测量。然而,图12C的重叠124大于图12A的重叠122。柱120的重叠122和124为如上文论述且在图9E中展示的图案化和蚀刻步骤的结果。图12D展示在移除牺牲层112从而形成腔19之后的图12C的装置。图12D的已释放装置具有腔深度128B,如垂直于衬底100和光学堆叠110所测量。在此实例中,在已释放可变形层130与光学堆叠110之间的腔的深度(展示为参考数字128B)可测量地大于在图12A和图12C中展示的未释放腔深度126,且大于在图12B中展示的已释放腔深度128A。腔深度差异归因于由柱120(与图12A的重叠122相比,具有重叠124)与可变形反射层130的组合应力而控制的挠曲。
图12E和图12G展示其中挠曲控制器包含上覆于可变形反射层130上的铆钉150(如上文论述且如图10中展示)的装置的实例。图12E的铆钉150与图12G的铆钉150相比具有较小重叠部分(或翼)(参看尺寸123和125)。在此实例中,对两个装置来说,牺牲层112的深度127大致相同。然而,在释放装置之后,对应腔深度可显著改变,如由图12F的深度129A和图12H的深度129B所描绘。
图12I、图12J和图12K描绘具有各种挠曲控制柱结构120和铆钉结构150的未释放干涉式调制器的实例。图12I具有上覆于机械层34上的铆钉结构150和下伏于机械层34下的柱结构,其中铆钉150和柱120具有类似重叠。图12J的铆钉结构150展现较少重叠,而柱结构120展现较多重叠。图12K描绘其中与柱结构120相比铆钉结构具有显著更大重叠的装置。
在干涉式调制器的制造期间,观察到在释放装置时(如图12B和图12D中所描绘),可移动反射层的向上挠曲为约500埃或500埃以下。然而,在释放装置时(如图12F和图12I中所描绘),通常并不发生可移动反射层的向下挠曲。通过改变挠曲控制器(例如,柱和/或铆钉)的大小和/或所包含的材料,可实现隔膜的增加的向上挠曲和/或向下挠曲。举例来说,沉积较薄柱和/或铆钉层可导致较少的向上挠曲或增加的向下挠曲。形成较硬材料的挠曲控制器可导致较少挠曲。减少在上覆挠曲控制器(例如,铆钉)中的张应力可降低向上挠曲。减少在下伏挠曲控制器(例如,柱)中的张应力可增加向上挠曲。张应力趋向于收缩装置的含有所述张应力的部分。相反,压缩应力趋向于膨胀装置的含有所述压缩应力的部分。所属领域的技术人员将认识到,通过改变柱120和/或铆钉150的相对大小以及改变构成柱120和/或铆钉150的材料,可实现显著不同的已释放腔深度。通过如上文论述改变挠曲控制器的大小和/或材料性质,可实现以下向上或向下挠曲范围,包括:约50埃到100埃、约100埃到150埃、约150埃到200埃、约200埃到250埃、约250埃到300埃、约300埃到350埃、约350埃到400埃、约400埃到450埃、约450埃到500埃、约500埃到550埃、约550埃到600埃、约600埃到650埃、约650埃到700埃、约700埃到750埃、约750埃到800埃、约800埃到850埃、约850埃到900埃、约900埃到950埃、约950埃到1000埃、约1000埃到1050埃、约1050埃到1100埃、约1100埃到1150埃、约1150埃到1200埃或1200埃以上。此外,所述范围的递增或递减约5埃、10埃、15埃、20埃和25埃是可能的。
本文描述的用于控制MEMS装置的腔深度的方法可对包括包含腔的MEMS装置(例如,干涉式调制器)的各种装置的制造具有积极效果。举例来说,表1概述其中在具有相似未释放牺牲层深度的干涉式调制器中制造各种柱结构重叠的一组实验的结果。对测量为222微米乘222微米的干涉式调制器像素来说,柱结构重叠(类似于分别在图12A和图12C中描绘的重叠122和124)是从1微米到3微米而改变。在所述实验中,牺牲层的厚度为约1150埃。在释放干涉式调制器之后,在可移动元件与光学堆叠之间的非驱动腔深度(如垂直于衬底所测量)显著改变。
表1
柱重叠(μm) | 非驱动腔深度(埃) |
1.0 | 1400 |
2.0 | 1775 |
2.5 | 2000 |
3.0 | 2200 |
在表1中展示,柱重叠的相对较小改变导致非驱动腔深度从最浅情况到最深情况的大于50%的改变。如上文论述,通过改变柱和/或铆钉的尺寸和/或材料,可显示甚至更大的改变。归因于柱结构中的张应力,在测试中使用的柱结构导致间隙大小的增加(参看图12B和图12D)。然而,通过利用铆钉结构和/或柱结构与铆钉结构的组合,还可实现可变形反射层的降低或下沉(如图12F和图12H中所描绘)。如上文所论述,对干涉式调制器来说,需要约1000埃到约5000埃的腔深度。约2000埃到约4000埃的腔大小范围优选用于调制可见光,而较小和/或较大的腔大小可用于调制超谱光(hyperspectrallight)、紫外光和/或红外光。可实现腔深度的约30%到40%、约40%到50%、约50%到60%、约60%到70%、约70%到80%、约80%到90%、约90%到100%或100%以上的增加。此外,可获得对所述范围的约1%、2%、3%、4%和5%的增量或减量。
除展示挠曲控制器的各种结构对腔深度具有的影响的上文论述的实验之外,还进行了模拟实验的分析研究,且其指示还可担负控制腔深度的额外能力。图13A到图13F展示经设计以展示在释放装置时,改变挠曲控制器结构的特征可对支撑层的偏转具有的影响的分析研究的结果。在研究中使用的分析方程式模型化在与铆钉和柱结构支撑的层中含有的应力组合时在各种铆钉和/或柱结构中含有的张应力和收缩应力的效应。在支撑结构中和在被支撑层中含有的模型化应力表示可视形成不同层的条件而产生的应力。由研究中的负应力水平表示的压缩应力趋向于膨胀装置的含有所述压缩应力的部分。由在研究中的正应力水平表示的张应力趋向于收缩装置的含有所述张应力的部分。研究考察柱和/或铆钉结构的多种组合。研究还模型化挠曲控制器结构的不同部分的特定尺寸范围和/或特征对所得偏转的影响。进行分析的挠曲控制器结构的尺寸和特征包括装置的各种部分的层厚度、重叠长度和应力水平。分析将挠曲控制器柱和/或铆钉以及被支撑层作为悬臂梁而模型化。在分析中使用的结构表示若干类型的装置中的任一者,包括(但不限于):MEMS装置、光调制装置和包含在薄膜层中的一者与衬底之间和/或在薄膜层中的两者之间具有腔的一个或一个以上薄膜层的任何装置。
将关于在图12中展示的干涉式调制器实施例来论述在图13A到图13F中展示的结果。应注意,干涉式调制器为可使用此处提供的分析方法而模型化的装置的实例,且使用上文描述的各种方法还可分析和制造其它装置。
在第一实例中分析的装置的配置包括由Ni构成的1000埃厚(如垂直于衬底100所测量)的可变形反射层130。用400MPa的张应力(表示在典型沉积条件下所经历的应力水平的类型)模型化Ni层。装置还包括2000埃厚(如垂直于衬底所测量)的氧化物柱结构120。在分析中模型化的氧化物柱结构包含SiO2。柱结构与可变形反射层130重叠3μm,其中所述重叠是如在图12A和图12C中展示的尺寸122和124所描绘而测量。用-400MPa压缩应力模型化柱结构。装置还包括氧化物铆钉结构150,其中图13A的铆钉结构的厚度(如垂直于衬底所测量)为1000埃,且在图13B的水平轴上是可变的。铆钉结构与可变形反射层130重叠3μm,其中重叠是如在图12E和图12G中展示的尺寸123和125所描绘而测量。对在图13B中展示的分析结果来说,铆钉结构的应力在水平轴上是可变的,且对在图13B中展示的分析结果来说,所述应力为-400MPa。图13A和图13B展示在释放牺牲层112从而产生腔19时可变形反射层130的所得偏转。正偏转值表示如图12B和图12D中所描绘的从衬底100离开的偏转。负偏转值表示如图12F和图12H中所描绘的朝向衬底100的偏转。
图13A的结果展示因压缩应力增加(较大负值),偏转降低,其展示在-500MPa氧化物铆钉应力下稍高于300埃的所估计偏转。随压缩应力降为零,偏转变得较大,展示在零MPa压力水平下大于800埃的所估计偏转。通过形成具有张应力水平(正应力)的铆钉结构,可获得甚至更大值的偏转。在图13A的实例中,所有偏转为正(从衬底离开)的原因为,-400MPa的组合氧化物柱应力和400MPa的可变形反射层应力均促成所分析的氧化物铆钉应力水平未克服的正偏转。偏转的较小值(包括负偏转值)可通过若干方法获得,包括:施加更大的负压缩铆钉应力水平、降低压缩氧化物柱的厚度、降低氧化物柱的压缩应力、降低压缩氧化物柱的厚度、增加压缩氧化物铆钉的厚度、降低压缩氧化物柱的重叠长度、增加压缩铆钉的重叠长度和所属领域的技术人员所知的其它方法。所述方法均用以降低装置的促成向上偏转的部分(例如,压缩柱120和拉伸可变形反射层130)的能量水平和/或增加装置的促成向下偏转的部分(例如,压缩铆钉150)的能量水平。
图13B的结果展示,在释放牺牲层112时,偏转随压缩氧化物铆钉150的厚度增加(增加促进向下偏转的能量)而降低,甚至在铆钉厚度大于约2000埃时变为负值。
下一实例包括:具有-400MPa的压缩应力的2000埃厚的氧化物柱120、具有-400MPa的压缩应力的1000埃厚的氧化物铆钉150和具有400MPa的张应力的1000埃厚的可变形反射Ni层130。柱120的重叠长度(参看在图12A中的尺寸122和在图12C中的尺寸124)与铆钉150的重叠长度(参看在图12E中的尺寸123和在图12G中的尺寸125)相等且从约2μm改变为约6μm。图13C展示在释放牺牲层112时,可变形反射层130的所估计偏转。增加柱120和铆钉150的重叠长度增加从衬底100离开的偏转。如在以上情况下,压缩柱120和拉伸可变形反射层130两者均促进向上偏转,且压缩铆钉150促进向下偏转。在此情况下,层130与柱120的组合能量超过铆钉150的能量,且偏转均为正。通过将氧化物柱120和氧化物铆钉150的重叠长度从约2μm改变为约6μm,层130的偏转可从约200埃改变为约1700埃。
图13D展示在释放牺牲层112时,在类似于图13C(除了不存在氧化物铆钉)的情况下,可变形反射层130的偏转。在此实例中,因为压缩铆钉并未对由柱120和可变形反射层130引起的向上偏转起反作用,所以可变形反射层130的正偏转远大于在无铆钉情况下的正偏转。通过将氧化物柱120的重叠长度从约2μm改变为约6μm,层130的偏转可从约500埃改变为约5500埃。
图13E展示在释放牺牲层112时,在类似于图13D(包括无氧化物铆钉),但具有3μm的固定氧化物柱120重叠(参看在图12A中的尺寸122和在图12C中的尺寸124)和改变的氧化物柱应力水平的情况下,可变形反射层130的偏转。在此实例中,可变形反射层130的正偏转因氧化物柱应力的负值变小(较低的压缩应力水平)而降低。对500MPa的压缩氧化物柱应力水平来说,在释放牺牲层112时,可变形反射层130的向上偏转为约1600埃,且对零应力水平来说,所述偏转为约350埃。
最终样本包括:具有-400MPa的压缩应力的2000埃厚的氧化物柱120、具有-200MPa的压缩应力的1000埃厚的氧化物铆钉150和具有400MPa的张应力的1000埃厚的可变形反射Ni层130。柱120的重叠长度(参看在图12A中的尺寸122和在图12C中的尺寸124)与铆钉150的重叠长度(参看在图12E中的尺寸123和在图12G中的尺寸125)相等且从约2μm改变为约6μm。图13F展示在释放牺牲层112时,可变形反射层130的所估计偏转。增加柱120和铆钉150两者的重叠长度增加从衬底100离开的偏转。如在以上情况下,压缩柱120和拉伸可变形反射层130两者均促进向上偏转,而压缩铆钉150促进向下偏转。在此情况下,层130与柱120的组合应力水平超过铆钉150的应力水平,且偏转均为正。通过将氧化物柱120和氧化物铆钉150的重叠长度从约2μm改变为约6μm,层130的所估计偏转从约250埃改变为约2500埃。
上文论述的对实例的分析研究展示,在释放装置时,组成挠曲控制器结构和/或其它层的多个部分的尺寸和/或特征的改变可影响被支撑层的偏转。所属领域的技术人员能够认识到修改相似类型的装置的部分以改变已释放装置的腔深度的其它方式。
未释放干涉式调制器的实施例包括:第一反射构件,其用于反射光;第二反射构件,其用于反射光;第一支撑构件,其用于支撑第二反射构件,其中第一支撑构件可通过蚀刻移除;和第二支撑构件,其用于支撑第二反射构件,且用于在移除第一支撑构件时在第一反射构件与第二反射构件之间形成深度大于第一支撑构件的深度约30%或30%以上的腔。参看图9到图12,此实施例的方面包括:第一反射构件为部分反射层104的情况;第二反射构件为可移动反射层14的情况;第一支撑构件为牺牲层112的情况;和第二支撑构件为柱结构120和铆钉结构150中的至少一者的情况。
未释放干涉式调制器的另一实施例包括:第一反射构件,其用于反射光;第二反射构件,其用于反射光;第一支撑构件,其用于支撑第二反射构件;和第二支撑构件,其用于支撑第二反射构件,且用于在移除第一支撑构件时实现第二反射构件朝向第一反射构件的移位,其中第一支撑构件可通过蚀刻移除。参看图9到图12,此实施例的方面包括:第一反射构件为部分反射层104的情况;第二反射构件为可移动反射层14的情况;第一支撑构件为牺牲层112的情况;和第二支撑构件为柱结构120和铆钉结构150中的至少一者的情况。
尽管以上详细描述已展示、描述且指出了本发明在应用到各种实施例时的新颖特征,但应了解,所属领域的技术人员可在不脱离本发明的精神的情况下对所说明的装置或工艺的形式和细节进行各种省略、替代和改变。如将认识到,可在不提供本文阐述的所有特征和益处的形式下实施本发明,因为某些特征可与其它特征分离地使用或实践。
Claims (23)
1.一种微机电装置,其包含:
衬底;
多个可移动元件,其在所述衬底上方,每一可移动元件通过腔而与所述衬底分离;以及
多个挠曲控制器,其在所述衬底上方,所述多个挠曲控制器经配置以可操作地支撑所述可移动元件,
其中所述挠曲控制器包含翼形部分,各翼形部分连接至其支撑的一个可移动元件的一部分,且其中所述多个挠曲控制器的至少一个的翼形部分下伏于其所连接和支撑的所述可移动元件的所述部分。
2.根据权利要求1所述的装置,进一步包含位于所述衬底的至少一部分上方的导电层。
3.根据权利要求1所述的装置,其中所述多个可移动元件的至少一部分是导电的。
4.根据权利要求1所述的装置,其中所述多个可移动元件的至少一部分包含反射表面。
5.根据权利要求1所述的装置,其中所述多个挠曲控制器由氮化硅(SiN)或二氧化硅(SiO2)中一个或多个形成。
6.一种微机电装置,其包含:
衬底;
多个可移动元件,其在所述衬底上方,每一可移动元件通过腔而与所述衬底分离;以及
多个挠曲控制器,其在所述衬底上方,所述多个挠曲控制器经配置以可操作地支撑所述可移动元件,其中所述挠曲控制器包含翼形部分,各翼形部分连接至其支撑的一个可移动元件的一部分,且其中所述多个挠曲控制器包含至少两个具有不同长度的翼形部分的挠曲控制器。
7.根据权利要求6所述的装置,其中所述多个挠曲控制器由氮化硅(SiN)或二氧化硅(SiO2)中一个或多个形成。
8.根据权利要求1所述的装置,其中所述多个可移动元件的至少一部分包含反射表面。
9.一种微机电装置,其包含:
衬底;
多个可移动元件,其在所述衬底上方,每一可移动元件通过腔而与所述衬底分离;以及
多个挠曲控制器,其在所述衬底上方,所述多个挠曲控制器经配置以可操作地支撑所述可移动元件,其中所述挠曲控制器包含翼形部分,各翼形部分连接至其支撑的一个可移动元件的一部分,且其中所述多个挠曲控制器中的至少两个的至少一部分包含具有不同厚度的翼形部分。
10.根据权利要求9所述的装置,其中所述多个挠曲控制器由氮化硅(SiN)或二氧化硅(SiO2)中一个或多个形成。
11.根据权利要求9所述的装置,其中所述多个可移动元件的至少一部分包含反射表面。
12.一种微机电装置,其包含:
衬底;
多个可移动元件,其在所述衬底上方,每一可移动元件通过腔而与所述衬底分离;以及
多个挠曲控制器,其在所述衬底上方,所述多个挠曲控制器经配置以可操作地支撑所述可移动元件,其中所述挠曲控制器包含翼形部分,各翼形部分连接至其支撑的一个可移动元件的一部分,且其中所述多个挠曲控制器的至少两个具有不同材料。
13.根据权利要求12所述的装置,其中所述多个挠曲控制器由氮化硅(SiN)或二氧化硅(SiO2)中一个或多个形成。
14.根据权利要求12所述的装置,其中所述多个可移动元件的至少一部分包含反射表面。
15.一种微机电装置,其包含:
衬底;
多个可移动元件,其在所述衬底上方,每一可移动元件通过腔而与所述衬底分离;以及
多个挠曲控制器,其在所述衬底上方,所述多个挠曲控制器经配置以可操作地支撑所述可移动元件,其中所述挠曲控制器包含翼形部分,各翼形部分连接至其支撑的一个可移动元件的一部分,且其中所述挠曲控制器进一步包含连接至所述翼形部分的楔形边缘及可操作地支撑所述边缘的基底,该基底按一选择的距离分离该边缘。
16.根据权利要求15所述的装置,其中所述多个挠曲控制器由氮化硅(SiN)或二氧化硅(SiO2)中一个或多个形成。
17.根据权利要求15所述的装置,其中所述多个可移动元件的至少一部分包含反射表面。
18.一种微机电装置,其包含:
衬底;
薄膜层,其在所述衬底的至少一部分的上方;
一个或多个挠曲控制器,其在所述衬底上方,所述一个或多个挠曲控制器可操作地支撑所述薄膜层并将所述薄膜层自所述衬底分离;所述挠曲控制器包含接触薄膜层的翼形部分;
一个或多个腔,界定于所述衬底与所述薄膜层之间;以及
其中所述多个挠曲控制器引起所述薄膜层的设置,以至于当所述挠曲控制器处于已释放位置时,至少一个腔具有第一深度,该第一深度是当所述挠曲控制器实质上平行于在未释放位置上的所述衬底时的腔的深度的约30%或更深;且其中所述多个挠曲控制器中的至少一个是下伏于所述薄膜层形成的。
19.根据权利要求18所述的装置,其中所述多个挠曲控制器中的至少两个包含不同材料。
20.一种微机电装置,其包含:
衬底;
薄膜层,其在所述衬底的至少一部分的上方;
一个或多个挠曲控制器,其在所述衬底上方,所述一个或多个挠曲控制器可操作地支撑所述薄膜层并将所述薄膜层自所述衬底分离;所述挠曲控制器包含接触薄膜层的翼形部分;
一个或多个腔,界定于所述衬底与所述薄膜层之间;以及
其中所述多个挠曲控制器引起所述薄膜层的设置,以至于当所述挠曲控制器处于已释放位置时,至少一个腔具有第一深度,该第一深度是当所述挠曲控制器实质上平行于在未释放位置的所述衬底时的腔的深度的约30%或更深;且其中所述多个挠曲控制器中的至少两个的翼形部分包含具有不同厚度的翼形部分。
21.一种微机电装置,其包含:
衬底;
薄膜层,其在所述衬底的至少一部分的上方;
一个或多个挠曲控制器,其在所述衬底上方,所述一个或多个挠曲控制器可操作地支撑所述薄膜层并将所述薄膜层自所述衬底分离;所述挠曲控制器包含接触薄膜层的翼形部分;
一个或多个腔,定义于所述衬底与所述薄膜层之间;以及
其中所述多个挠曲控制器引起所述薄膜层的设置,以至于当所述挠曲控制器处于已释放位置时,至少一个腔具有第一深度,该第一深度是当所述挠曲控制器在未释放位置实质上平行于所述衬底时的腔的深度的约30%或更深;且其中所述多个挠曲控制器中的至少两个的至少一部分具有不同厚度。
22.一种微机电装置,其包含:
衬底;
薄膜层,其在所述衬底的至少一部分的上方;
一个或多个挠曲控制器,其在所述衬底上方,所述一个或多个挠曲控制器可操作地支撑所述薄膜层并将所述薄膜层自所述衬底分离;所述挠曲控制器包含接触薄膜层的翼形部分;
一个或多个腔,定义于所述衬底与所述薄膜层之间;以及
其中所述多个挠曲控制器引起所述薄膜层的设置,以至于当所述挠曲控制器处于已释放位置时,至少一个腔具有第一深度,该第一深度是当所述挠曲控制器在未释放位置实质上平行于所述衬底时的腔的深度的约30%或更深;且其中所述多个挠曲控制器由氮化硅(SiN)或二氧化硅(SiO2)中一个或多个形成。
23.一种微机电装置,其包含:
衬底;
薄膜层,其在所述衬底的至少一部分的上方;
一个或多个挠曲控制器,其在所述衬底上方,所述一个或多个挠曲控制器可操作地支撑所述薄膜层并将所述薄膜层自所述衬底分离;所述挠曲控制器包含接触薄膜层的翼形部分;
一个或多个腔,定义于所述衬底与所述薄膜层之间;以及
其中所述多个挠曲控制器引起所述薄膜层的设置,以至于当所述挠曲控制器处于已释放位置时,至少一个腔具有第一深度,该第一深度是当所述挠曲控制器在未释放位置实质上平行于所述衬底时的腔的深度的约30%或更深;且其中所述挠曲控制器进一步包含连接至所述翼形部分的楔形边缘及可操作地支撑所述边缘的基底,该基底按一选择的距离分离所述挠曲控制器的边缘。
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2007
- 2007-05-16 CN CN2007800248522A patent/CN101484381B/zh not_active Expired - Fee Related
- 2007-05-16 KR KR1020147012177A patent/KR20140078723A/ko not_active Application Discontinuation
- 2007-05-16 CN CN2012103977993A patent/CN103011049A/zh active Pending
- 2007-05-16 RU RU2008151142/28A patent/RU2484007C2/ru not_active IP Right Cessation
- 2007-05-16 WO PCT/US2007/011812 patent/WO2008005109A1/en active Application Filing
- 2007-05-16 EP EP08153354A patent/EP2157046A3/en not_active Withdrawn
- 2007-05-16 EP EP08153355A patent/EP2157047A3/en not_active Withdrawn
- 2007-05-16 CA CA002656530A patent/CA2656530A1/en not_active Abandoned
- 2007-05-16 JP JP2009518119A patent/JP5021736B2/ja not_active Expired - Fee Related
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- 2007-05-16 BR BRPI0712927-0A patent/BRPI0712927A2/pt not_active IP Right Cessation
- 2007-05-16 EP EP07794971A patent/EP1943185A1/en not_active Withdrawn
- 2007-05-28 TW TW096119029A patent/TWI423920B/zh not_active IP Right Cessation
- 2007-05-28 TW TW102149114A patent/TW201418143A/zh unknown
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2009
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2011
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CN101484381B (zh) | 2013-06-19 |
CA2656530A1 (en) | 2008-01-10 |
EP2157047A2 (en) | 2010-02-24 |
JP2009543121A (ja) | 2009-12-03 |
WO2008005109A1 (en) | 2008-01-10 |
US20090213451A1 (en) | 2009-08-27 |
EP2157046A3 (en) | 2012-08-22 |
TW200807061A (en) | 2008-02-01 |
RU2484007C2 (ru) | 2013-06-10 |
BRPI0712927A2 (pt) | 2012-10-02 |
TWI423920B (zh) | 2014-01-21 |
CN101484381A (zh) | 2009-07-15 |
US20080003737A1 (en) | 2008-01-03 |
KR20090033882A (ko) | 2009-04-06 |
US8964280B2 (en) | 2015-02-24 |
EP2157047A3 (en) | 2012-08-22 |
JP5520898B2 (ja) | 2014-06-11 |
US20120122259A1 (en) | 2012-05-17 |
TW201418143A (zh) | 2014-05-16 |
US7952787B2 (en) | 2011-05-31 |
KR101443303B1 (ko) | 2014-09-22 |
JP2012006142A (ja) | 2012-01-12 |
US8102590B2 (en) | 2012-01-24 |
JP5021736B2 (ja) | 2012-09-12 |
EP2157046A2 (en) | 2010-02-24 |
US7527998B2 (en) | 2009-05-05 |
US20090273823A1 (en) | 2009-11-05 |
KR20140078723A (ko) | 2014-06-25 |
EP1943185A1 (en) | 2008-07-16 |
RU2008151142A (ru) | 2010-08-10 |
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