TWI437072B - 覆晶型半導體背面用膜、半導體背面用切晶帶一體膜、半導體裝置之製造方法及覆晶型半導體裝置 - Google Patents
覆晶型半導體背面用膜、半導體背面用切晶帶一體膜、半導體裝置之製造方法及覆晶型半導體裝置 Download PDFInfo
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- TWI437072B TWI437072B TW100126668A TW100126668A TWI437072B TW I437072 B TWI437072 B TW I437072B TW 100126668 A TW100126668 A TW 100126668A TW 100126668 A TW100126668 A TW 100126668A TW I437072 B TWI437072 B TW I437072B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Description
本發明係關於一種覆晶型半導體背面用膜及一種半導體背面用切晶帶一體膜。該覆晶型半導體背面用膜係用於保護諸如半導體晶片之半導體元件背面及增強其強度的目的及其類似目的。此外,本發明係關於一種使用半導體背面用切晶帶一體膜製造半導體裝置之方法,及一種覆晶型半導體裝置。
最近,半導體裝置及其封裝已愈來愈需要薄化及小型化。因此,已廣泛利用藉助於覆晶接合(flip chip bonding)將諸如半導體晶片之半導體元件安裝(覆晶式連接)於基板上的覆晶型半導體裝置作為半導體裝置及其封裝。在此覆晶式連接中,半導體晶片係以半導體晶片之電路面與基板之電極形成面相對的形式固著於基板上。在此種半導體裝置或其類似裝置中,可能存在半導體晶片背面用保護膜保護以防止半導體晶片損壞的情況或其類似情況(參見專利文件1至10)。
專利文件1:JP-A-2008-166451
專利文件2:JP-A-2008-006386
專利文件3:JP-A-2007-261035
專利文件4:JP-A-2007-250970
專利文件5:JP-A-2007-158026
專利文件6:JP-A-2004-221169
專利文件7:JP-A-2004-214288
專利文件8:JP-A-2004-142430
專利文件9:JP-A-2004-072108
專利文件10:JP-A-2004-063551
然而,用保護膜保護半導體晶片背面需要將保護膜附著於切晶步驟中所得之半導體晶片背面的另一步驟。結果,處理步驟數目增多且生產成本因此提高。此外,近來的薄化趨向可能會引起半導體晶片在拾取半導體晶片之步驟中有時被損壞。因此,在拾取步驟之前(包括拾取步驟),半導體晶圓及半導體晶片需要被強化以便增強其機械強度。特定而言,半導體晶片之薄化在有些情況下會使半導體晶片產生翹曲,以致需要抑制或防止翹曲產生。
考慮到上述問題,構成本發明且本發明之一個目標為提供一種能夠抑制或防止覆晶式連接於黏附體上之半導體元件產生翹曲的覆晶型半導體背面用膜;及一種切晶帶一體化晶圓背面保護膜。
此外,本發明之另一目標為提供一種製造半導體裝置的方法,該方法能夠使半導體元件覆晶式連接於黏附體上,同時抑制翹曲產生且從而能夠提高製造良率。
為解決上述相關技術問題,本發明人已進行了廣泛且深入的研究。結果發現,藉由控制覆晶型半導體背面用膜在熱固化時之體積收縮率可減少覆晶式連接於黏附體上之半導體之翹曲產生,從而實現本發明。
亦即,本發明提供一種欲在覆晶式連接於黏附體上之半導體元件背面上形成的覆晶型半導體背面用膜,其中熱固化之前的該覆晶型半導體背面用膜在其熱固化時在23℃至165℃範圍內具有100 ppm/℃至400 ppm/℃之體積收縮率。
在覆晶安裝(flip chip mounting)中,常見的是,不使用成形樹脂囊封整個半導體封裝,而僅用囊封樹脂囊封黏附體與半導體元件之間的凸塊連接部分(bump connecting part),稱為側填滿(underfill)。因此,半導體元件背面裸露。舉例而言,在囊封樹脂熱固化時,半導體元件因囊封樹脂固化及收縮而受到應力,且在有些情況下半導體元件因該應力而產生翹曲。特定而言,在具有300 μm或小於300 μm之厚度(此外,200 μm或小於200 μm之厚度)之薄型半導體元件中,翹曲產生現象變得明顯。
本發明之覆晶型半導體背面用膜當形成於半導體元件背面上時,可發揮保護覆晶式連接於黏附體上之半導體元件的功能。此外,在囊封樹脂熱固化時,本發明之覆晶型半導體背面用膜同時被固化且收縮。在此情形下,根據本發明之覆晶型半導體背面用膜,由於熱固化之前的覆晶型半導體背面用膜在熱固化時在23℃至165℃範圍內的體積收縮率為100 ppm/℃或大於100 ppm/℃,因此針對作用於半導體元件之應力,該膜可施加一種抵消或緩解作用於半導體元件之應力的應力。因此可有效抑制或防止半導體元件在回焊步驟之前的翹曲。此外,由於體積收縮率為400 ppm/℃或小於400 ppm/℃,因此可實現對應於囊封材料之收縮度的適度收縮。順便提及,半導體元件背面意謂與其上面形成電路之表面相對的表面。
在上述構造中,熱固化之後的半導體背面用膜較佳在23℃下具有1 GPa至5 GPa之拉伸儲能模數。當熱固化之後的拉伸儲能模數為1 GPa或大於1 GPa時,可更有效地抑制或防止翹曲。此外,當熱固化之後的拉伸儲能模數為5 GPa或小於5 GPa時,可抑制或防止反面產生翹曲。
在上述構造中,覆晶型半導體背面用膜較佳具有10 μm至40 μm之厚度。藉由控制厚度為10 μm或大於10 μm,可更有效地抑制或防止翹曲。此外,藉由控制該厚度為40 μm或小於40 μm,可抑制或防止反面產生翹曲。此外,藉由控制該厚度為40 μm或小於40 μm,可使由覆晶安裝於黏附體上之半導體元件構成的半導體裝置薄化。
本發明亦提供一種半導體背面用切晶帶一體膜,其包含切晶帶及層壓於該切晶帶上之上述覆晶型半導體背面用膜,其中該切晶帶包含基底材料及層壓於該基底材料上之壓敏性黏著層,且該覆晶型半導體背面用膜被層壓於該切晶帶之該壓敏性黏著層上。
根據具有上述構造之半導體背面用切晶帶一體膜,由於切晶帶與覆晶型半導體背面用膜係以一體化形式形成,因此,亦可提供半導體背面用切晶帶一體膜用於切割半導體晶圓以製備半導體元件之切晶步驟或後續拾取步驟。亦即,當在切晶步驟之前將切晶帶附著於半導體晶圓背面時,半導體背面用膜亦可附著於其上,因此不需要單獨附著半導體背面用膜之步驟(半導體背面用膜之附著步驟)。因此可減少處理步驟數目。另外,由於半導體背面用膜保護半導體晶圓背面及藉由切晶所形成之半導體元件背面,因此可在切晶步驟及後續步驟(例如拾取步驟)期間減少或防止半導體元件損壞。因此可提高覆晶型半導體裝置之製造良率。
本發明進一步提供一種使用上述半導體背面用切晶帶一體膜製造半導體裝置的方法,該方法包含:使半導體晶圓附著於該半導體背面用切晶帶一體膜之該覆晶型半導體背面用膜上,切割該半導體晶圓以形成半導體元件,將該半導體元件隨該覆晶型半導體背面用膜一起自該切晶帶之該壓敏性黏著層剝離,及連接該半導體元件至黏附體上。
在上述方法中,由於將半導體背面用切晶帶一體膜附著於半導體晶圓背面,因此不需要單獨附著半導體背面用膜之步驟(半導體背面用膜之附著步驟)。此外,由於在切割半導體晶圓及拾取藉由切晶所形成之半導體元件期間,用半導體背面用膜保護半導體晶圓及半導體元件背面,因此可防止損壞及其類似問題發生。因此可以改良之製造良率製造覆晶型半導體裝置。
上述覆晶式連接步驟較佳包含將囊封樹脂填入黏附體與覆晶接合於黏附體上之半導體元件之間的間隙,隨後將該囊封樹脂熱固化。
在囊封樹脂熱固化時,半導體元件因囊封樹脂固化及收縮而受到應力,且在有些情況下半導體元件可能因該應力而產生翹曲。特定而言,在具有300 μm或小於300 μm之厚度(此外,200 μm或小於200 μm之厚度)之薄型半導體元件中,翹曲產生現象變得明顯。然而,在上述方法中,由於熱固化之前的覆晶型半導體背面用膜在熱固化時,該覆晶型半導體背面用膜在23℃至165℃範圍內呈現100 ppm/℃或大於100 ppm/℃之體積收縮率,因此針對作用於半導體元件之應力,該膜可施加一種抵消或緩解作用於半導體元件之應力的應力。因此可有效抑制或防止半導體元件在回焊步驟之前的翹曲。此外,由於體積收縮率為400 ppm/℃或小於400 ppm/℃,因此可實現對應於囊封材料之收縮度的適度收縮。
此外,本發明提供一種利用上述方法製造的覆晶型半導體裝置。
根據本發明之覆晶型半導體背面用膜,由於該膜係在覆晶式連接於黏附體上之半導體元件背面上形成,因此該膜發揮保護該半導體元件之功能。此外,由於熱固化之前的覆晶型半導體背面用膜在熱固化時,該覆晶型半導體背面用膜在23℃至165℃範圍內呈現100 ppm/℃至400 ppm/℃之體積收縮率,因此可有效抑制或防止半導體元件在回焊步驟之前發生翹曲。
此外,根據本發明之半導體背面用切晶帶一體膜,切晶帶與覆晶型半導體背面用膜係以一體化形式形成,因此亦可提供半導體背面用切晶帶一體膜用於切割半導體晶圓以製備半導體元件之切晶步驟或後續拾取步驟。因此,不需要單獨附著半導體背面用膜之步驟(半導體背面用膜之附著步驟)。此外,在後續切晶步驟及拾取步驟中,由於將半導體背面用膜附著於半導體晶圓背面或由切晶形成之半導體元件背面,因此可有效保護半導體晶圓及半導體元件且可抑制或防止半導體元件損壞。此外,可在覆晶式連接半導體元件於黏附體上時防止半導體元件產生翹曲。
此外,根據本發明之製造半導體裝置之方法,由於將半導體背面用切晶帶一體膜附著於半導體晶圓背面,因此不需要單獨附著半導體背面用膜之步驟。此外,由於在切割半導體晶圓及拾取藉由切晶所形成之半導體元件期間,用半導體背面用膜保護半導體晶圓及半導體元件背面,因此可防止損壞及其類似問題發生。此外,可在覆晶式連接半導體元件於黏附體上時防止半導體元件產生翹曲。因此可在改良製造良率之同時製造覆晶型半導體裝置。
參考圖1描述本發明之實施例,但本發明不限於此等實施例。圖1為顯示本發明實施例之半導體背面用切晶帶一體膜之一個實施例的橫截面示意圖。順便提及,在本說明書之圖式中,不需要說明的部分不顯示,且為了便於說明,存在有藉由放大、縮小等所顯示的部分。
如圖1中所示,半導體背面用切晶帶一體膜1(下文中有時亦稱作「切晶帶一體化半導體背面保護膜」、「具有切晶帶之半導體背面用膜」或「具有切晶帶之半導體背面保護膜」)具有包括以下之組態:包括形成於基底材料31上之壓敏性黏著層32的切晶帶3,及形成於壓敏性黏著層32上的覆晶型半導體背面用膜2(下文中有時稱作「半導體背面用膜」或「半導體背面保護膜」)。此外,如圖1中所示,本發明之半導體背面用切晶帶一體膜可設計成使得半導體背面用膜2僅在對應於半導體晶圓附著部分之部分33上形成;然而,半導體背面用膜可在壓敏性黏著層32之整個表面上形成,或半導體背面用膜可形成於大於對應於半導體晶圓附著部分之部分33、但小於壓敏性黏著層32之整個表面的部分上。順便提及,半導體背面用膜2之表面(欲附著於晶圓背面之表面)可用隔離物或其類似物保護直至該膜附著於晶圓背面為止。
半導體背面用膜2具有膜形狀。半導體背面用膜2在半導體背面用切晶帶一體膜作為產品之實施例中通常呈未固化狀態(包括半固化狀態)且在將半導體背面用切晶帶一體膜附著於半導體晶圓之後被熱固化(詳情如下所述)。
本發明實施例之半導體背面用膜2具有如下特性:熱固化之前的覆晶型半導體背面用膜在熱固化時在23℃至165℃範圍內的體積收縮率為100 ppm/℃至400 ppm/℃。在體積收縮率為100 ppm/℃或大於100 ppm/℃的情況下,即使當覆晶式連接於黏附體之半導體元件較薄(例如300 μm或小於300 μm之厚度,此外為200 μm或小於200 μm之厚度)時,亦可有效抑制或防止翹曲。在覆晶式連接中,在將半導體元件覆晶接合於黏附體上之後,僅用囊封材料(諸如稱為側填滿材料之囊封樹脂)囊封黏附體與半導體元件之間的連接部分。此外,將囊封樹脂熱固化,但半導體元件因囊封材料固化及收縮而同時受到應力,因此可能產生翹曲。然而,在囊封材料熱固化時,本發明實施例之半導體背面用膜2隨囊封材料一起固化且收縮。在此情形下,由於體積收縮率為100 ppm/℃或大於100 ppm/℃,因此亦可自半導體背面用膜2對半導體元件施加應力,且因此可抵消或緩解囊封材料固化及收縮所產生的應力。因此可抑制或防止半導體元件產生翹曲。此外,由於體積收縮率為400 ppm/℃或小於400 ppm/℃,因此可實現對應於囊封材料之收縮度的適度收縮。半導體背面用膜2之上述體積收縮率較佳為150 ppm/℃至350 ppm/℃,更佳為200 ppm/℃至350 ppm/℃。
此處,雖然半導體背面用膜2可為單層或可為複數個層疊壓在一起的層壓膜,但在半導體背面用膜為層壓膜之情況下,整個層壓膜之體積收縮率可為100 ppm/℃至400 ppm/℃。半導體背面用膜之上述體積收縮率可藉由適當設定熱固性樹脂之種類及含量等加以控制。舉例而言,其可利用在線性熱膨脹係數方面不同之熱固性樹脂之摻合量加以控制。順便提及,半導體背面用膜之體積收縮率可根據實例中所述之方法加以量測。
半導體背面用膜係由至少一種熱固性樹脂形成且較佳由至少一種熱固性樹脂及熱塑性樹脂形成。當該膜係由至少一種熱固性樹脂形成時,半導體背面用膜可有效呈現黏著層之功能。熱塑性樹脂之實例包括天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、聚醯胺樹脂(諸如6-耐綸及6,6-耐綸)、苯氧基樹脂、丙烯酸系樹脂、飽和聚酯樹脂(諸如PET(聚對苯二甲酸乙二酯)或PBT(聚對苯二甲酸丁二酯))、聚醯胺-醯亞胺樹脂或氟樹脂。熱塑性樹脂可單獨使用或可組合使用兩種或兩種以上。在此等熱塑性樹脂中,離子雜質含量少、耐熱性高且能夠保證半導體元件之可靠性的丙烯酸系樹脂特別較佳。
丙烯酸系樹脂不受特別限制,且其實例包括含有一種或兩種或兩種以上具有直鏈或分支鏈烷基之丙烯酸酯或甲基丙烯酸酯作為組分的聚合物,該烷基具有30個或少於30個碳原子,較佳為4至18個碳原子,更佳為6至10個碳原子,尤其為8或9個碳原子。亦即,在本發明中,丙烯酸系樹脂具有亦包括甲基丙烯酸系樹脂的廣泛含義。烷基實例包括甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基(stearyl)及十八烷基(octadecyl)。此外,用於形成丙烯酸系樹脂之其他單體(除丙烯酸或甲基丙烯酸之烷基酯以外的單體,其中該烷基為具有30個或少於30個碳原子之烷基)不受特別限制,且其實例包括含羧基之單體,諸如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸(itaconic acid)、順丁烯二酸、反丁烯二酸及丁烯酸;酸酐單體,諸如順丁烯二酸酐及衣康酸酐;含羥基之單體,諸如(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯及甲基丙烯酸4-羥基甲基環己酯;含磺酸基之單體,諸如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺基-2-甲基丙烷磺酸、(甲基)丙烯醯胺基丙烷磺酸、(甲基)丙烯酸磺丙酯及(甲基)丙烯醯氧基萘磺酸;及含磷酸基團之單體,諸如磷酸2-羥乙基丙烯醯酯。就此而言,(甲基)丙烯酸意謂丙烯酸及/或甲基丙烯酸,(甲基)丙烯酸酯意謂丙烯酸酯及/或甲基丙烯酸酯,(甲基)丙烯醯基((meth)acryl)意謂丙烯醯基及/或甲基丙烯醯基等,其適用於整個說明書中。
此外,除環氧樹脂及酚樹脂以外,熱固性樹脂之實例亦包括胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂及熱固性聚醯亞胺樹脂。熱固性樹脂可單獨使用或可組合使用兩種或兩種以上。僅含有少量會腐蝕半導體元件之離子雜質的環氧樹脂適用作熱固性樹脂。此外,酚樹脂適合用作環氧樹脂之固化劑。環氧樹脂不受特別限制,且舉例而言,可使用雙官能環氧樹脂或多官能環氧樹脂,諸如雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、溴化雙酚A型環氧樹脂、氫化雙酚A型環氧樹脂、雙酚AF型環氧樹脂、聯苯型環氧樹脂、萘型環氧樹脂、茀型環氧樹脂、苯酚酚醛清漆型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂、參羥基苯基甲烷型環氧樹脂及四苯酚乙烷型環氧樹脂,或諸如乙內醯脲型環氧樹脂、參縮水甘油基異氰尿酸酯型環氧樹脂或縮水甘油胺型環氧樹脂之環氧樹脂。作為環氧樹脂,在上文舉例說明之彼等環氧樹脂中,較佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、參羥基苯基甲烷型環氧樹脂及四苯酚乙烷型環氧樹脂。此原因在於此等環氧樹脂與作為固化劑之酚樹脂具有高反應性且耐熱性及其類似性質優良。
此外,上述酚樹脂充當環氧樹脂之固化劑,且其實例包括酚醛清漆型酚樹脂,諸如苯酚清漆型酚醛樹脂、苯酚芳烷基樹脂、甲酚清漆型酚醛樹脂、第三丁基苯酚清漆型酚醛樹脂及壬基苯酚清漆型酚醛樹脂;甲階型(resol type)酚樹脂;及聚氧苯乙烯,諸如聚對氧苯乙烯。酚樹脂可單獨使用或可組合使用兩種或兩種以上。在此等酚樹脂中,苯酚清漆型酚醛樹脂及苯酚芳烷基樹脂特別較佳。此原因在於可提高半導體裝置之連接可靠性。環氧樹脂與酚樹脂之混合比例較佳應例如使得酚樹脂中之羥基以環氧樹脂組分中之環氧基當量數計為0.5當量至2.0當量。其更佳為0.8當量至1.2當量。亦即,當該混合比例超出該範圍時,固化反應不能充分進行,且環氧樹脂固化產物之特性傾向於變差。以半導體背面用膜之全部樹脂組分計,熱固性樹脂之含量較佳為5重量%至90重量%,更佳為10重量%至85重量%,進一步較佳為15重量%至80重量%。藉由控制該含量為5重量%或大於5重量%,可容易地使熱固化收縮度為2體積%或大於2體積%。此外,在使囊封樹脂熱固化時,半導體背面用膜可被充分熱固化且因而可穩固地黏著且固著於半導體元件之背面,從而製得呈現無剝離的覆晶型半導體裝置。另一方面,藉由控制含量為90重量%或小於90重量%,可抑制封裝(PKG:覆晶型半導體裝置)翹曲。用於環氧樹脂及酚樹脂之熱固化加速催化劑不受特別限制且可自已知的熱固化加速催化劑中作適當選擇及加以使用。熱固化加速催化劑可單獨使用或可組合使用兩種或兩種以上。作為熱固化加速催化劑,例如可使用基於胺之固化加速催化劑、基於磷之固化加速催化劑、基於咪唑之固化加速催化劑、基於硼之固化加速催化劑或基於磷-硼之固化加速催化劑。
半導體背面用膜宜由含有環氧樹脂及酚樹脂之樹脂組合物或由含有環氧樹脂、酚樹脂及丙烯酸系樹脂之樹脂組合物形成。由於此等樹脂之離子雜質少且耐熱性高,因此可保證半導體元件之可靠性。重要的是,半導體背面用膜2對半導體晶圓背面(無電路面)具有黏著性(緊密黏著)。半導體背面用膜2可例如由含有環氧樹脂作為熱固性樹脂之樹脂組合物形成。為使半導體背面用膜2預先交聯至某種程度,在製備時較佳添加能夠與聚合物之分子鏈末端官能基或其類似基團反應的多官能化合物作為交聯劑。據此,可增強高溫下的黏著特性且提高耐熱性。半導體背面用膜對半導體晶圓之黏著力(23℃,180°剝離角,300 mm/min之剝離速率)較佳在0.5 N/20 mm至15 N/20 mm範圍內,更佳在0.7 N/20 mm至10 N/20 mm範圍內。藉由控制該黏著力為0.5 N/20 mm或大於0.5 N/20 mm,可使該膜以極佳黏著性附著於半導體晶圓及半導體元件且可防止其產生***或其類似現象。此外,在切割半導體晶圓時,亦可防止晶片飛出。另一方面,藉由控制該黏著力為15 N/20 mm或小於15 N/20 mm,可容易自切晶帶剝離該膜。
交聯劑不受特別限制且可使用已知交聯劑。特定而言,例如,不僅可提及基於異氰酸酯之交聯劑、基於環氧基之交聯劑、基於三聚氰胺之交聯劑及基於過氧化物之交聯劑,而且可提及基於脲之交聯劑、基於金屬醇鹽之交聯劑、基於金屬螯合物之交聯劑、基於金屬鹽之交聯劑、基於碳化二亞胺之交聯劑、基於噁唑啉之交聯劑、基於氮丙啶之交聯劑、基於胺之交聯劑及其類似物。作為交聯劑,基於異氰酸酯之交聯劑或基於環氧基之交聯劑為適合的。交聯劑可單獨使用或可組合使用兩種或兩種以上。基於異氰酸酯之交聯劑實例包括低碳脂族多異氰酸酯,諸如二異氰酸1,2-乙二酯、二異氰酸1,4-丁二酯及二異氰酸1,6-己二酯;脂環族多異氰酸酯,諸如二異氰酸環戊二酯、二異氰酸環己二酯、異氟爾酮二異氰酸酯(isophorone diisocyanate)、氫化二異氰酸伸甲苯酯及氫化二異氰酸伸二甲苯酯;及芳族多異氰酸酯,諸如二異氰酸2,4-伸甲苯酯、二異氰酸2,6-伸甲苯酯、4,4'-二苯基甲烷二異氰酸酯及二異氰酸伸二甲苯酯。另外,亦使用三羥甲基丙烷/二異氰酸伸甲苯酯三聚物加合物[商標「COLONATE L」,Nippon Polyurethane Industry Co.,Ltd.製造]、三羥甲基丙烷/二異氰酸己二酯三聚物加合物[商標「COLONATE HL」,Nippon Polyurethane Industry Co.,Ltd.製造]及其類似物。此外,基於環氧基之交聯劑實例包括N,N,N',N'-四縮水甘油基-間二甲苯二胺、二縮水甘油基苯胺、1,3-雙(N,N-縮水甘油基胺基甲基)環己烷、1,6-己二醇二縮水甘油醚、新戊二醇二縮水甘油醚、乙二醇二縮水甘油醚、丙二醇二縮水甘油醚、聚乙二醇二縮水甘油醚、聚丙二醇二縮水甘油醚、山梨糖醇聚縮水甘油醚、甘油聚縮水甘油醚、季戊四醇聚縮水甘油醚、聚甘油聚縮水甘油醚、脫水山梨糖醇聚縮水甘油醚、三羥甲基丙烷聚縮水甘油醚、己二酸二縮水甘油酯、鄰苯二甲酸二縮水甘油酯、三縮水甘油基-參(2-羥乙基)異氰尿酸酯、間苯二酚二縮水甘油醚及雙酚-S-二縮水甘油醚以及分子中具有兩個或兩個以上環氧基的基於環氧基之樹脂。
交聯劑用量不受特別限制且可依據交聯程度作適當選擇。特定而言,較佳地,以100重量份之聚合物組分(特定言之,在分子鏈末端具有官能基之聚合物)計,交聯劑用量通常為7重量份或小於7重量份(例如0.05重量份至7重量份)。以100重量份之聚合物組分計,當交聯劑用量大於7重量份時,黏著力降低,因此此情況不佳。自提高內聚力之觀點來看,以100重量份之聚合物組分計,交聯劑用量較佳為0.05重量份或大於0.05重量份。
在本發明中,亦可藉由用電子束、UV光或其類似物照射而不使用交聯劑或聯合使用交聯劑來進行交聯處理。半導體背面用膜較佳經著色。因此可顯現極佳的雷射標記特性及極佳的外觀特性,且可使半導體裝置具有增值的外觀特性。如上所述,由於經著色之半導體背面用膜具有極佳的標記特性,因此可藉由利用多種標記法(諸如印刷方法及雷射標記法)中的任一種方法經由半導體背面用膜進行標記以向半導體元件或使用半導體元件之半導體裝置之無電路側之面上賦予各種資訊,諸如文字資訊及圖形資訊。特定言之,藉由控制著色之顏色,可觀察到由標記所賦予之資訊(例如文字資訊及圖形資訊)具有極佳可見度。此外,當半導體背面用膜經著色時,切晶帶與半導體背面用膜彼此間可容易辨別,以便可增強可加工性及其類似性質。此外,例如,作為半導體裝置,可藉由利用不同顏色來對其產品分類。在半導體背面用膜經著色之情況(該膜既非無色、亦非透明的情況)下,由著色所顯示之顏色不受特別限制,但例如較佳為深色,諸如黑色、藍色或紅色,且黑色尤其適合。在本發明實施例中,深色基本上意謂具有60或小於60(0至60)、較佳為50或小於50(0至50)且更佳為40或小於40(0至40)之L*(以L*a*b*色空間定義)的深色。此外,黑色基本上意謂具有35或小於35(0至35)、較佳為30或小於30(0至30)且更佳為25或小於25(0至25)之L*(以L*a*b*色空間定義)的基於黑色之顏色。就此而言,在黑色中,以L*a*b*色空間定義之a*及b*各自可根據L*之值作適當選擇。舉例而言,a*與b*均在-10至10範圍內較佳,在-5至5範圍內更佳,且在-3至3範圍內(尤其為0或約0)進一步較佳。
在本發明實施例中,以L*a*b*色空間定義之L*、a*及b*可藉由用色差計(商標「CR-200」色差計,Minolta Ltd.製造)量測來測定。L*a*b*色空間為國際照明委員會(Commission Internationale de l'Eclairage;CIE)於1976年所推薦的色空間且意謂稱為CIE1976(L*a*b*)色空間之色空間。此外,L*a*b*色空間係依據日本工業標準(Japanese Industrial Standards)於JIS Z8729中定義。在著色半導體背面用膜時,可根據目標顏色使用著色劑。作為此種著色劑,宜使用各種深色著色劑,諸如黑色著色劑、藍色著色劑及紅色著色劑,且黑色著色劑更適合。著色劑可為顏料及染料中之任一者。著色劑可單獨使用或可組合使用兩種或兩種以上。就此而言,作為染料,可使用任何形式之染料,諸如酸性染料、反應性染料、直接染料、分散染料及陽離子染料。此外,亦就顏料而言,其形式不受特別限制且可在已知顏料中作適當選擇及加以使用。
特定而言,當將染料用作著色劑時,染料成為因溶解而均勻或幾乎均勻地分散於半導體背面用膜中之狀態,以便可容易製造具有均勻或幾乎均勻的顏色密度之半導體背面用膜(因此可容易製造相應之半導體背面用切晶帶一體膜)。因此,當將染料用作著色劑時,半導體背面用切晶帶一體膜中之半導體背面用膜可具有均勻或幾乎均勻的顏色密度且可增強標記特性及外觀特性。黑色著色劑不受特別限制且例如宜選自無機黑色著色顏料及黑色著色染料。此外,黑色著色劑可為著色劑混合物,其中將青色著色劑(藍綠色著色劑)、洋紅色著色劑(紫紅色著色劑)及黃色著色劑混合。黑色著色劑可單獨使用或可組合使用兩種或兩種以上。當然,黑色著色劑可與除黑色以外之顏色的著色劑組合使用。黑色著色劑之特定實例包括碳黑(諸如爐法碳黑、槽法碳黑、乙炔碳黑、熱碳黑或燈碳黑)、石墨、氧化銅、二氧化錳、偶氮型顏料(諸如甲亞胺偶氮黑)、苯胺黑、苝黑、鈦黑、花青黑、活性炭、鐵氧體(諸如非磁性鐵氧體或磁性鐵氧體)、磁鐵礦、氧化鉻、氧化鐵、二硫化鉬、鉻錯合物、複合氧化物型黑色顏料及蒽醌型有機黑色顏料。
在本發明中,作為黑色著色劑,亦可使用黑色著色染料,諸如CI.溶劑黑3、CI.溶劑黑7、CI.溶劑黑22、CI.溶劑黑27、CI.溶劑黑29、CI.溶劑黑34、CI.溶劑黑43、CI.溶劑黑70、CI.直接黑17、CI.直接黑19、CI.直接黑22、CI.直接黑32、CI.直接黑38、CI.直接黑51、CI.直接黑71、CI.酸性黑1、CI.酸性黑2、CI.酸性黑24、CI.酸性黑26、CI.酸性黑31、CI.酸性黑48、CI.酸性黑52、CI.酸性黑107、CI.酸性黑109、CI.酸性黑110、CI.酸性黑119、CI.酸性黑154及CI.分散黑1、CI.分散黑3、CI.分散黑10、CI.分散黑24;黑色著色顏料,諸如CI.顏料黑1、CI.顏料黑7;及其類似物。作為此等黑色著色劑,例如可市購商標「Oil Black BY」、商標「Oil Black BS」、商標「Oil Black HBB」、商標「Oil Black 803」、商標「Oil Black 860」、商標「Oil Black 5970」、商標「Oil Black 5906」、商標「Oil Black 5905」(Orient Chemical Industries Co.,Ltd.製造)及其類似物。
除黑色著色劑以外之著色劑實例包括青色著色劑、洋紅色著色劑及黃色著色劑。青色著色劑之實例包括青色著色染料,諸如CI.溶劑藍25、36、60、70、93、95;CI.酸性藍6及45;青色著色顏料,諸如CI.顏料藍1、2、3、15、15:1、15:2、15:3、15:4、15:5、15:6、16、17、17:1、18、22、25、56、60、63、65、66;C.I.甕藍4、60;及C.I.顏料綠7。此外,在洋紅色著色劑中,洋紅色著色染料之實例包括C.I.溶劑紅1、3、8、23、24、25、27、30、49、52、58、63、81、82、83、84、100、109、111、121、122;C.I.分散紅9;C.I.溶劑紫8、13、14、21、27;C.I.分散紫1;C.I.鹼性紅1、2、9、12、13、14、15、17、18、22、23、24、27、29、32、34、35、36、37、38、39、40;C.I.鹼性紫1、3、7、10、14、15、21、25、26、27及28。在洋紅色著色劑中,洋紅色著色顏料之實例包括C.I.顏料紅1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、21、22、23、30、31、32、37、38、39、40、41、42、48:1、48:2、48:3、48:4、49、49:1、50、51、52、52:2、53:1、54、55、56、57:1、58、60、60:1、63、63:1、63:2、64、64:1、67、68、81、83、87、88、89、90、92、101、104、105、106、108、112、114、122、123、139、144、146、147、149、150、151、163、166、168、170、171、172、175、176、177、178、179、184、185、187、190、193、202、206、207、209、219、222、224、238、245;CI.顏料紫3、9、19、23、31、32、33、36、38、43、50;CI.甕紅1、2、10、13、15、23、29及35。
此外,黃色著色劑之實例包括黃色著色染料,諸如CI.溶劑黃19、44、77、79、81、82、93、98、103、104、112及162;黃色著色顏料,諸如CI.顏料橙31、43;CI.顏料黃1、2、3、4、5、6、7、10、11、12、13、14、15、16、17、23、24、34、35、37、42、53、55、65、73、74、75、81、83、93、94、95、97、98、100、101、104、108、109、110、113、114、116、117、120、128、129、133、138、139、147、150、151、153、154、155、156、167、172、173、180、185、195;CI.甕黃1、3及20。各種著色劑(諸如青色著色劑、洋紅色著色劑及黃色著色劑)分別可單獨使用或可組合使用兩種或兩種以上。就此而言,在使用兩種或兩種以上多種著色劑(諸如青色著色劑、洋紅色著色劑及黃色著色劑)的情況下,此等著色劑之混合比(或摻合比)不受特別限制且可根據各種著色劑之種類、目標顏色及其類似因素作適當選擇。在半導體背面用膜2經著色的情況下,著色形式不受特別限制。半導體背面用膜可例如為添加有著色劑之單層膜狀物品。此外,該膜可為層壓膜,其中至少將由至少一種熱固性樹脂形成之樹脂層與著色劑層疊壓在一起。就此而言,在半導體背面用膜2為樹脂層與著色劑層之層壓膜的情況下,呈層壓形式之半導體背面用膜2較佳具有樹脂層/著色劑層/樹脂層之層壓形式。在此情況下,著色劑層兩側之兩個樹脂層可為具有相同組成之樹脂層或可為具有不同組成之樹脂層。
可根據需要在半導體背面用膜2中適當地摻合其他添加劑。其他添加劑之實例包括增量劑、抗老化劑、抗氧化劑及界面活性劑,此外包括填充劑、阻燃劑、矽烷偶合劑及離子捕獲劑。填充劑可為無機填充劑及有機填充劑中之任一者,但無機填充劑為適合的。藉由摻合填充劑(諸如無機填充劑)可賦予半導體背面用膜導電性、提高導熱性、控制彈性模數及實現其類似效果。就此而言,半導體背面用膜2可具導電性或非導電性。無機填充劑之實例包括由以下組成之多種無機粉末:二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、陶瓷(諸如碳化矽及氮化矽)、金屬或合金(諸如鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀及焊料)、碳,及其類似物。填充劑可單獨使用或可組合使用兩種或兩種以上。特定而言,填充劑宜為二氧化矽且更宜為熔融的二氧化矽。此處,無機填充劑之平均粒徑較佳在0.1 μm至80 μm範圍內。無機填充劑之平均粒徑可例如利用雷射繞射型粒度分佈量測設備來量測。
以100重量份之有機樹脂組分計,填充劑(尤其為無機填充劑)摻合量較佳為80重量份或小於80重量份(0重量份至80重量份),特別較佳為0重量份至70重量份。阻燃劑之實例包括三氧化銻、五氧化二銻及溴化環氧樹脂。阻燃劑可單獨使用或可組合使用兩種或兩種以上。矽烷偶合劑之實例包括β-(3,4-環氧基環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷及γ-縮水甘油氧基丙基甲基二乙氧基矽烷。矽烷偶合劑可單獨使用或可組合使用兩種或兩種以上。離子捕獲劑之實例包括水滑石(hydrotalcite)及氫氧化鉍。離子捕獲劑可單獨使用或可組合使用兩種或兩種以上。
半導體背面用膜2可例如藉由利用常用方法來形成,該方法包括將熱固性樹脂(諸如環氧樹脂)及需要時使用之熱塑性樹脂(諸如丙烯酸系樹脂)及視情況選用之溶劑及其他添加劑混合以製備樹脂組合物,隨後使其形成膜狀層。特定而言,作為半導體背面用膜之膜狀層(黏著層)可例如藉由以下方法形成:包括將樹脂組合物施加於切晶帶之壓敏性黏著層32上的方法;包括將樹脂組合物施加於適當隔離物(諸如釋放紙)上以形成樹脂層(或黏著層)及接著將其轉移(轉錄)至壓敏性黏著層32上的方法;或其類似方法。就此而言,樹脂組合物可為溶液或分散液。順便提及,在半導體背面用膜2由含有熱固性樹脂(諸如環氧樹脂)之樹脂組合物形成的情況下,半導體背面用膜在該膜施加於半導體晶圓之前的階段呈熱固性樹脂未固化或部分固化之狀態。在此情況下,在其施加於半導體晶圓(特定而言,通常在覆晶接合步驟中固化囊封材料時)之後,半導體背面用膜中之熱固性樹脂完全固化或幾乎完全固化。
如上所述,由於半導體背面用膜即使當該膜含有熱固性樹脂時亦呈熱固性樹脂未固化或部分固化之狀態,因此半導體背面用膜之凝膠分率不受特別限制,但例如宜選自50重量%或小於50重量%(0至50重量%)之範圍且較佳為30重量%或小於30重量%(0至30重量%)且特別較佳為10重量%或小於10重量%(0至10重量%)。半導體背面用膜之凝膠分率可利用以下量測方法量測。<凝膠分率量測方法>
自半導體背面用膜2獲取約0.1 g樣品且準確稱重(樣品重量),且在將樣品包裹於網孔型薄片中之後,在室溫下於約50 mL甲苯中浸漬1週。隨後,自甲苯中取出溶劑不溶性物質(網孔型薄片之內含物)且在130℃下乾燥約2小時,將乾燥之後的溶劑不溶性物質稱重(浸漬且乾燥之後的重量),接著根據以下表達式(a)計算凝膠分率(重量%)。凝膠分率(重量%)=[(浸漬且乾燥之後的重量)/(樣品重量)]×100 (a)半導體背面用膜之凝膠分率可利用樹脂組分之種類及含量以及交聯劑之種類及含量以及此外的加熱溫度、加熱時間及其類似因素加以控制。
在本發明中,在半導體背面用膜為由含有熱固性樹脂(諸如環氧樹脂)之樹脂組合物形成之膜狀物品的情況下,可有效顯現對半導體晶圓之緊密黏著性。順便提及,由於在半導體晶圓之切晶步驟中使用切割水(cutting water),因此半導體背面用膜吸收水分而具有正常狀態之水分含量或在有些情況下具有大於正常狀態之水分含量。當在仍維持此種高水分含量下執行覆晶接合時,水汽保留於半導體背面用膜2與半導體晶圓或其所加工主體(半導體)之間的黏著界面處,且在有些情況下產生***。因此,藉由將半導體背面用膜建構成其各表面上均提供有透濕性高之核心材料的組態,水汽可擴散且從而可避免此種問題。根據此種觀點,可使用半導體背面用膜2形成於核心材料之一個表面或兩個表面上的多層狀結構作為半導體背面用膜。核心材料之實例包括膜(例如聚醯亞胺膜、聚酯膜、聚對苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚碳酸酯膜等)、經玻璃纖維或塑膠非編織纖維強化之樹脂基板、矽基板及玻璃基板。
半導體背面用膜2之厚度(在層壓膜情況下為總厚度)不受特別限制,但較佳為10 μm至40 μm,更佳為20 μm至30 μm。藉由控制半導體背面用膜2之厚度為10 μm或大於10 μm,可更有效地抑制或防止翹曲。此外,藉由控制該厚度為40 μm或小於40 μm,可進一步抑制或防止反面產生翹曲。此外,藉由控制該厚度為40 μm或小於40 μm,可使由覆晶安裝於黏附體上之半導體元件構成的半導體裝置薄化。
在23℃下處於未固化狀態之半導體背面用膜2之拉伸儲能彈性模數較佳為1 GPa或大於1 GPa(例如1 GPa至50 GPa),更佳為2 GPa或大於2 GPa,且3 GPa或大於3 GPa特別適合。當拉伸儲能彈性模數為1 GPa或大於1 GPa時,可在將半導體晶片隨半導體背面用膜2一起自切晶帶之壓敏性黏著層32剝離之後將半導體背面用膜2置放於支撐物上且進行運輸及其類似動作時有效抑制或防止半導體背面用膜附著於支撐物。就此而言,支撐物為例如載帶中的頂膠帶、底膠帶及其類似物。
此處,半導體背面用膜2可為單層或有複數個層疊壓在一起的層壓膜。在層壓膜情況下,呈未固化狀態之整個層壓膜在23℃下之拉伸儲能彈性模數足以為1 GPa或大於1 GPa(例如1 GPa至50 GPa)。此外,處於未固化狀態之半導體背面用膜之拉伸儲能彈性模數(23℃)可藉由適當地設定樹脂組分(熱塑性樹脂及/或熱固性樹脂)之種類及含量或填充劑(諸如二氧化矽填充劑)之種類及含量來控制。在半導體背面用膜2為複數個層疊壓在一起之層壓膜的情況下(在半導體背面用膜具有層壓層形式的情況下),作為層壓層形式,可例如舉由晶圓黏著層與雷射標記層構成之層壓形式說明。此外,在晶圓黏著層與雷射標記層之間,可提供其他層(中間層、光屏蔽層、加強層、著色層、基底材料層、電磁波屏蔽層、導熱層、壓敏性黏著層等)。就此而言,晶圓黏著層為對晶圓顯現極佳的緊密黏著性(黏著特性)之層及與晶圓背面接觸之層。另一方面,雷射標記層為顯現極佳的雷射標記特性之層及在半導體晶片背面上雷射標記時使用之層。
拉伸儲能彈性模數係如下測定:製備處於未固化狀態之半導體背面用膜2而不層壓於切晶帶3上,且在10 mm樣品寬度、22.5 mm樣品長度、0.2 mm樣品厚度、1 Hz頻率及10℃/分鐘之溫度升高速率的條件下,在氮氣氛圍下,在規定溫度(23℃)下使用由Rheometrics Co. Ltd.製造之動態黏彈性量測設備「Solid Analyzer RS A2」量測拉伸模式下的彈性模數,且將所測彈性模數視為所得拉伸儲能彈性模數值。
熱固化之後的半導體背面用膜2較佳在23℃下具有1 GPa至5 GPa,更佳為1.5 GPa至4.5 GPa,進一步較佳為2.0 GPa至4.0 GPa之拉伸儲能模數。當熱固化之後的拉伸儲能模數為1 GPa或大於1 GPa時,可更有效地抑制或防止翹曲。此外,當熱固化之後的拉伸儲能模數為5 GPa或小於5 GPa時,可進一步抑制或防止反面產生翹曲。
此處,雖然半導體背面用膜2可為單層或可為複數個層疊壓在一起的層壓膜,但在層壓膜情況下,整個層壓膜在熱固化之後在23℃下的拉伸儲能模數可在1 GPa至5 GPa範圍內。此外,半導體背面用膜在熱固化之後在23℃下的上述拉伸儲能模數可藉由適當地設定樹脂組分(熱塑性樹脂及/或熱固性樹脂)之種類及含量、填充劑(諸如二氧化矽填充劑)之種類及含量及其類似因素來控制。
順便提及,熱固化之後在23℃下的拉伸儲能模數如下測定:製備熱固化之半導體背面用膜2而不層壓於切晶帶3上,且在10 mm樣品寬度、22.5 mm樣品長度、0.2 mm樣品厚度、1 Hz頻率及10℃/min之溫度升高速率的條件下,在規定溫度(23℃)下,在氮氣氛圍下使用由Rheometrics Co.,Ltd.所製造之動態黏彈性量測設備「Solid Analyzer RS A2」量測拉伸模式下之彈性模數,且將所測彈性模數視為所得拉伸儲能模數之值。
半導體背面用膜2較佳在其至少一個表面上用隔離物(釋放襯墊)(圖中未示出)保護。舉例而言,在半導體背面用切晶帶一體膜1中,隔離物可提供於半導體背面用膜之至少一個表面上。另一方面,在未與切晶帶一體化之半導體背面用膜中,隔離物可提供於半導體背面用膜之一個表面或兩個表面上。隔離物起作為保護材料保護半導體背面用膜直至其實際使用之作用。此外,在半導體背面用切晶帶一體膜1中,隔離物可進一步在將半導體背面用膜2轉移至切晶帶基底材料之壓敏性黏著層32上時用作支撐基底材料。當將半導體晶圓附著於半導體背面用膜上時,剝離隔離物。作為隔離物,亦可使用聚乙烯膜或聚丙烯膜,以及塑膠膜(諸如聚對苯二甲酸乙二酯)、紙或其類似物,其表面塗有釋放劑,諸如基於氟之釋放劑或基於長鏈丙烯酸烷基酯之釋放劑。隔離物可利用習知方法形成。此外,隔離物之厚度或其類似方面不受特別限制。
在半導體背面用膜2不與切晶帶3層壓在一起的情況下,半導體背面用膜2可與一個雙面均具有釋放層之隔離物一起捲攏成一捲筒,其中該膜2用雙面均具有釋放層的隔離物保護;或膜2可用在至少一個表面上具有釋放層的隔離物保護。
此外,可見光在半導體背面用膜2中之透光率(可見光透射率,波長:400 nm至800 nm)不受特別限制,但例如較佳在20%或小於20%(0至20%)範圍內,更佳在10%或小於10%(0至10%)範圍內,且特別較佳在5%或小於5%(0至5%)範圍內。當半導體背面用膜2具有超過20%之可見光透射率時,擔心光透射可能會不利地影響半導體元件。可見光透射率(%)可利用半導體背面用膜2樹脂組分之種類及含量、著色劑(諸如顏料或染料)之種類及含量、無機填充劑之含量及其類似因素加以控制。
半導體背面用膜2之可見光透射率(%)可如下測定。亦即,製備自身厚度(平均厚度)為20 μm之半導體背面用膜2。接著,用具有400至800 nm波長之可見光,以規定強度[設備:可見光產生設備,由Shimadzu Corporation製造[商標「ABSORPTION SPECTRO PHOTOMETER」]]照射半導體背面用膜2,且量測透射可見光之強度。此外,可基於可見光透過半導體背面用膜2之前與之後的強度變化來測定可見光透射率(%)。就此而言,亦可根據厚度不為20 μm之半導體背面用膜2之可見光透射率值(%;波長:400 nm至800 nm)得出具有20 μm厚度之半導體背面用膜2之可見光透射率(%;波長:400 nm至800 nm)。在本發明中,可見光透射率(%)係在半導體背面用膜2具有20 μm厚度的情況下測定,但本發明之半導體背面用膜不限於具有20 μm厚度之半導體背面用膜。
此外,作為半導體背面用膜2,具有較低水分吸收度之膜更佳。特定而言,水分吸收度較佳為1重量%或小於1重量%且更佳為0.8重量%或小於0.8重量%。藉由將水分吸收度調節為1重量%或小於1重量%,可提高雷射標記特性。此外,例如,可在回焊步驟中抑制或防止半導體背面用膜2與半導體元件之間產生空隙。水分吸收度為根據使半導體背面用膜2在85℃溫度及85% RH濕度之氛圍下擱置168小時之前與之後的重量變化計算而得的值。在半導體背面用膜2係由含有熱固性樹脂之樹脂組合物形成的情況下,水分吸收度意謂在使熱固化後之膜在85℃溫度及85% RH濕度之氛圍下擱置168小時時所獲得的值。此外,可調節水分吸收度,例如藉由改變無機填充劑之添加量來調節水分吸收度。
此外,作為半導體背面用膜2,具有較小比率之揮發物的膜更佳。特定而言,半導體背面用膜2在熱處理後的重量降低比率(重量降低率)較佳為1重量%或小於1重量%且更佳為0.8重量%或小於0.8重量%。熱處理條件為例如250℃之加熱溫度及1小時之加熱時間。藉由將重量降低率調節為1重量%或小於1重量%,可提高雷射標記特性。此外,例如,可在回焊步驟中抑制或防止覆晶型半導體裝置產生開裂。可調節重量降低率,例如藉由添加能夠在無鉛焊料回焊時減少開裂產生的無機物來調節重量降低率。在半導體背面用膜2由含有熱固性樹脂組分之樹脂組合物形成的情況下,重量降低率為在250℃溫度及1小時加熱時間之條件下加熱熱固化後之半導體背面用膜時所獲得的值。
切晶帶3包括基底材料31及形成於基底材料31上之壓敏性黏著層32。因此,切晶帶3具有基底材料31與壓敏性黏著層32疊壓在一起之組態為足夠的。基底材料(支撐基底材料)可用作壓敏性黏著層及其類似物之支撐材料。基底材料31較佳具有輻射線透射特性。作為基底材料31,例如可使用適合的薄材料,例如基於紙之基底材料,諸如紙;基於纖維之基底材料,諸如織物、非編織織物、氈及網;基於金屬之基底材料,諸如金屬箔及金屬板;塑膠基底材料,諸如塑膠膜及塑膠片;基於橡膠之基底材料,諸如橡膠片;發泡體,諸如發泡片;及其層壓物[特定言之,基於塑膠之材料與其他基底材料之層壓物、塑膠膜(或薄片)彼此之層壓物等]。在本發明中,作為基底材料,宜使用塑膠基底材料,諸如塑膠膜及塑膠片。此等塑膠材料之原材料之實例包括烯烴樹脂,諸如聚乙烯(PE)、聚丙烯(PP)及乙烯-丙烯共聚物;使用乙烯作為單體組分之共聚物,諸如乙烯-乙酸乙烯酯共聚物(EVA)、離子鍵共聚物樹脂(ionomer resin)、乙烯-(甲基)丙烯酸共聚物及乙烯-(甲基)丙烯酸酯(無規、交替)共聚物;聚酯,諸如聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)及聚對苯二甲酸丁二酯(PBT);丙烯酸系樹脂;聚氯乙烯(PVC);聚胺基甲酸酯;聚碳酸酯;聚苯硫醚(PPS);基於醯胺之樹脂,諸如聚醯胺(耐綸)及全芳族聚醯胺(芳族聚醯胺);聚醚醚酮(PEEK);聚醯亞胺;聚醚醯亞胺;聚偏二氯乙烯;ABS(丙烯腈-丁二烯-苯乙烯共聚物);基於纖維素之樹脂;聚矽氧樹脂;及氟化樹脂。
另外,用於基底材料31之材料包括聚合物,諸如上述樹脂之交聯材料。塑膠膜可在不拉伸的情況下使用或必要時可在單軸或雙軸拉伸處理後使用。根據藉由拉伸處理或其類似處理賦予熱收縮特性之樹脂片,切晶後,基底材料31熱收縮減小了壓敏性黏著層32與半導體背面用膜2之間的黏著面積,且從而可有利於半導體晶片之回收。
可向基底材料31之表面施加常用表面處理,例如化學或物理處理,諸如鉻酸鹽處理、臭氧暴露、火焰暴露、暴露於高電壓電擊、或電離輻射處理、或用底塗劑(例如隨後提及的壓敏性黏著物)作塗佈處理,以便增強與相鄰層的緊密黏著性、固持特性及其類似特性。
作為基底材料31,宜選擇且使用相同種類或不同種類的材料,且必要時可摻合且使用數種材料。此外,為賦予基底材料31抗靜電能力,可在基底材料31上形成具有約30至500埃(angstrom)厚度且由金屬、其合金或氧化物構成之導電物質之氣相沈積層。基底材料31可為單層或其兩者或兩者以上之多層。
基底材料31之厚度(在層壓層情況下為總厚度)不受特別限制且可根據強度、撓性、預定使用目的及其類似因素作適當選擇。舉例而言,該厚度一般為1,000 μm或小於1,000 μm(例如1 μm至1,000 μm),較佳為10 μm至500 μm,進一步較佳為20 μm至300 μm,且特別較佳為約30 μm至200 μm,但不限於此。
順便提及,基底材料31在無損於本發明之優點及其類似方面的範圍內可含有各種添加劑(著色劑、填充劑、增塑劑、抗老化劑、抗氧化劑、界面活性劑、阻燃劑等)。
壓敏性黏著層32係由壓敏性黏著劑形成且具有壓敏性黏著性。不受特別限定,壓敏性黏著劑宜選自已知壓敏性黏著劑。具體而言,作為壓敏性黏著劑,例如,具有上述特性之彼等壓敏性黏著劑宜選自已知壓敏性黏著劑,諸如丙烯酸系壓敏性黏著劑、基於橡膠之壓敏性黏著劑、基於乙烯基烷基醚之壓敏性黏著劑、基於聚矽氧之壓敏性黏著劑、基於聚酯之壓敏性黏著劑、基於聚醯胺之壓敏性黏著劑、基於胺基甲酸酯之壓敏性黏著劑、基於氟之壓敏性黏著劑、基於苯乙烯-二烯嵌段共聚物之壓敏性黏著劑及藉由向上述壓敏性黏著劑中併入具有不高於200℃之熔點之熱熔性樹脂所製備的潛變特性改良之壓敏性黏著劑(參見例如JP-A-56-61468、JP-A-61-174857、JP-A-63-17981、JP-A-56-13040,該等專利以引用的方式併入本文中),且用於本文中。作為壓敏性黏著劑,此處亦可使用輻射可固化壓敏性黏著劑(或能量射線可固化壓敏性黏著劑)及熱膨脹性壓敏性黏著劑。一或多種此等壓敏性黏著劑在此處可單獨使用或組合使用。
作為壓敏性黏著劑,本文中較佳使用丙烯酸系壓敏性黏著劑及基於橡膠之壓敏性黏著劑,且更佳為丙烯酸系壓敏性黏著劑。丙烯酸系壓敏性黏著劑之實例包括包含以一或多種(甲基)丙烯酸烷酯作為單體組分之丙烯酸系聚合物(均聚物或共聚物)作為基礎聚合物的彼等黏著劑。
用於丙烯酸系壓敏性黏著劑之(甲基)丙烯酸烷酯包括例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十一烷酯、(甲基)丙烯酸十二烷酯、(甲基)丙烯酸十三烷酯、(甲基)丙烯酸十四烷酯、(甲基)丙烯酸十五烷酯、(甲基)丙烯酸十六烷酯、(甲基)丙烯酸十七烷酯、(甲基)丙烯酸十八烷酯、(甲基)丙烯酸十九烷酯、(甲基)丙烯酸二十烷酯等。作為(甲基)丙烯酸烷酯,較佳為烷基具有4至18個碳原子之(甲基)丙烯酸烷酯。在(甲基)丙烯酸烷酯中,烷基可為直鏈或分支鏈。
有需要時,丙烯酸系聚合物可含有對應於可與上述(甲基)丙烯酸烷酯共聚之任何其他單體組分(可共聚單體組分)的單元,以便提高其內聚力、耐熱性及可交聯性。可共聚單體組分包括例如含羧基之單體,諸如(甲基)丙烯酸(丙烯酸、甲基丙烯酸)、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、順丁烯二酸、反丁烯二酸、巴豆酸;含酸酐基團之單體,諸如順丁烯二酸酐、衣康酸酐;含羥基之單體,諸如(甲基)丙烯酸羥乙酯、(甲基)丙烯酸羥丙酯、(甲基)丙烯酸羥丁酯、(甲基)丙烯酸羥己酯、(甲基)丙烯酸羥辛酯、(甲基)丙烯酸羥癸酯、(甲基)丙烯酸羥基月桂酯、甲基丙烯酸(4-羥基甲基環己基)甲酯;含磺酸基之單體,諸如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙烷磺酸、(甲基)丙烯醯胺-丙烷磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸;含磷酸基之單體,諸如丙烯醯基磷酸2-羥乙酯;(N上經取代之)醯胺單體,諸如(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、N-丁基(甲基)丙烯醯胺、N-羥甲基(甲基)丙烯醯胺、N-羥甲基丙烷(甲基)丙烯醯胺;(甲基)丙烯酸胺基烷酯單體,諸如(甲基)丙烯酸胺基乙酯、(甲基)丙烯酸N,N-二甲基胺基乙酯、(甲基)丙烯酸第三丁基胺基乙酯;(甲基)丙烯酸烷氧基烷酯單體,諸如(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯;氰基丙烯酸酯單體,諸如丙烯腈、甲基丙烯腈;含環氧基之丙烯酸系單體,諸如(甲基)丙烯酸縮水甘油基酯;苯乙烯單體,諸如苯乙烯、α-甲基苯乙烯;乙烯酯單體,諸如乙酸乙烯酯、丙酸乙烯酯;烯烴單體,諸如異戊二烯、丁二烯、異丁烯;乙烯醚單體,諸如乙烯醚;含氮單體,諸如N-乙烯基吡咯啶酮、甲基乙烯基吡咯啶酮、乙烯吡啶、乙烯哌啶酮、乙烯嘧啶、乙烯哌嗪、乙烯吡嗪、乙烯吡咯、乙烯咪唑、乙烯噁唑、乙烯嗎啉、N-乙烯碳醯胺、N-乙烯己內醯胺;順丁烯二醯亞胺單體,諸如N-環己基順丁烯二醯亞胺、N-異丙基順丁烯二醯亞胺、N-月桂基順丁烯二醯亞胺、N-苯基順丁烯二醯亞胺;衣康醯亞胺單體,諸如N-甲基衣康醯亞胺、N-乙基衣康醯亞胺、N-丁基衣康醯亞胺、N-辛基衣康醯亞胺、N-2-乙基己基衣康醯亞胺、N-環己基衣康醯亞胺、N-月桂基衣康醯亞胺;丁二醯亞胺單體,諸如N-(甲基)丙烯醯氧基亞甲基丁二醯亞胺、N-(甲基)丙烯醯基-6-氧基六亞甲基丁二醯亞胺、N-(甲基)丙烯醯基-8-氧基八亞甲基丁二醯亞胺;乙醇酸丙烯醯酯單體,諸如聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯、甲氧基乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯;具有雜環、鹵原子、矽原子或其類似物之丙烯酸酯單體,諸如(甲基)丙烯酸四氫呋喃甲基酯、氟(甲基)丙烯酸酯、聚矽氧(甲基)丙烯酸酯;多官能單體,諸如己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧基丙烯酸酯、聚酯丙烯酸酯、胺基甲酸酯丙烯酸酯、二乙烯基苯、二(甲基)丙烯酸丁酯、二(甲基)丙烯酸己酯等。一或多種此等可共聚單體組分在此處可單獨使用或組合使用。
本發明中可使用之輻射可固化壓敏性黏著劑(或能量射線可固化壓敏性黏著劑)(組合物)包括例如內部型輻射可固化壓敏性黏著劑,其包含在聚合物側鏈、主鏈或主鏈末端中具有自由基反應性碳碳雙鍵之聚合物作為基礎聚合物;及藉由在壓敏性黏著劑中併入UV可固化單體組分或寡聚物組分所製備的輻射可固化壓敏性黏著劑。本文中亦可使用之熱膨脹性壓敏性黏著劑包括例如包含壓敏性黏著劑及發泡劑(特別是熱膨脹性微球體)之彼等黏著劑。
在本發明中,壓敏性黏著層32在無損於本發明之優點的範圍內可含有各種添加劑(例如增黏性樹脂、著色劑、增稠劑、增量劑、填充劑、增塑劑、抗老化劑、抗氧化劑、界面活性劑、交聯劑等)。
交聯劑不受特別限制且可使用已知交聯劑。特定而言,作為交聯劑,不僅可提及基於異氰酸酯之交聯劑、基於環氧基之交聯劑、基於三聚氰胺之交聯劑及基於過氧化物之交聯劑,而且可提及基於脲之交聯劑、基於金屬醇鹽之交聯劑、基於金屬螯合物之交聯劑、基於金屬鹽之交聯劑、基於碳化二亞胺之交聯劑、基於噁唑啉之交聯劑、基於氮丙啶之交聯劑、基於胺之交聯劑及其類似物,且基於異氰酸酯之交聯劑及基於環氧基之交聯劑為適合的。交聯劑可單獨使用或可組合使用兩種或兩種以上。順便提及,交聯劑用量不受特別限制。
基於異氰酸酯之交聯劑實例包括低碳脂族多異氰酸酯,諸如二異氰酸1,2-乙二酯、二異氰酸1,4-丁二酯及二異氰酸1,6-己二酯;脂環族多異氰酸酯,諸如二異氰酸環戊二酯、二異氰酸環己二酯、異氟爾酮二異氰酸酯、氫化二異氰酸伸甲苯酯及氫化二異氰酸伸二甲苯酯;及芳族多異氰酸酯,諸如二異氰酸2,4-伸甲苯酯、二異氰酸2,6-伸甲苯酯、4,4'-二苯基甲烷二異氰酸酯及二異氰酸伸二甲苯酯。另外,亦使用三羥甲基丙烷/二異氰酸伸甲苯酯三聚物加合物[商標「COLONATE L」,Nippon Polyurethane Industry Co.,Ltd.製造]、三羥甲基丙烷/二異氰酸己二酯三聚物加合物[商標「COLONATE HL」,Nippon Polyurethane Industry Co.,Ltd.製造]及其類似物。此外,基於環氧基之交聯劑實例包括N,N,N',N'-四縮水甘油基-間二甲苯二胺、二縮水甘油基苯胺、1,3-雙(N,N-縮水甘油基胺基甲基)環己烷、1,6-己二醇二縮水甘油醚、新戊二醇二縮水甘油醚、乙二醇二縮水甘油醚、丙二醇二縮水甘油醚、聚乙二醇二縮水甘油醚、聚丙二醇二縮水甘油醚、山梨糖醇聚縮水甘油醚、甘油聚縮水甘油醚、季戊四醇聚縮水甘油醚、聚甘油聚縮水甘油醚、脫水山梨糖醇聚縮水甘油醚、三羥甲基丙烷聚縮水甘油醚、己二酸二縮水甘油酯、鄰苯二甲酸二縮水甘油酯、三縮水甘油基-參(2-羥乙基)異氰尿酸酯、間苯二酚二縮水甘油醚及雙酚-S-二縮水甘油醚以及分子中具有兩個或兩個以上環氧基的基於環氧基之樹脂。
可經由用電子射線或紫外線照射而不使用本發明之交聯劑或聯合本發明之交聯劑一起使壓敏性黏著層發生交聯。
壓敏性黏著層32可例如藉由利用常用方法來形成,該方法包括將壓敏性黏著劑與視情況選用之溶劑及其他添加劑混合及接著使混合物成形為片狀層。特定而言,例如,可提及包括在基底材料31上施加含有壓敏性黏著劑及視情況選用之溶劑及其他添加劑之混合物的方法;包括在適當隔離物(諸如釋放紙)上施加上述混合物以形成壓敏性黏著層32及接著將其轉移(轉錄)至基底材料31上的方法;或其類似方法。
不受特別限定,壓敏性黏著層32之厚度可例如為5 μm至300 μm(較佳為5 μm至200 μm,更佳為5 μm至100 μm,甚至更佳為7 μm至50 μm)左右。當壓敏性黏著層32之厚度屬於該範圍時,則該層可顯現適合壓敏性黏著力。壓敏性黏著層32可為單層或多層。
切晶帶3之壓敏性黏著層32對覆晶型半導體背面用膜2的黏著力(23℃,180度剝離角,300 mm/min之剝離速率)較佳在0.02 N/20 mm至10 N/20 mm範圍內,更佳在0.05 N/20 mm至5 N/20 mm範圍內。當黏著力為至少0.02 N/20 mm時,則可在切割半導體晶圓時防止半導體晶片衝出。另一方面,當黏著力為至多10 N/20 mm時,則有利於在拾取半導體晶片時將其剝離,且防止壓敏性黏著劑殘留。
順便提及,在本發明中,可使覆晶型半導體背面用膜2或半導體背面用切晶帶一體膜1具有抗靜電功能。由於此組態,因此可防止因黏著時及剝離其時產生靜電能量或因靜電能量使半導體晶圓或其類似物帶電而引起的電路擊穿。賦予抗靜電功能可利用適當方式進行,諸如向基底材料31、壓敏性黏著層32及半導體背面用膜2中添加抗靜電劑或導電物質的方法,或在基底材料31上提供由電荷轉移複合物、金屬膜或其類似物構成之導電層的方法。作為此等方法,較佳為很難產生可能會改變半導體晶圓品質之雜質離子的方法。為賦予導電性、提高導熱性之目的及其類似目的而摻合之導電物質(導電性填充劑)的實例包括銀、鋁、金、銅、鎳、導電合金或其類似金屬之球狀、針狀或片狀金屬粉末;金屬氧化物,諸如氧化鋁;非晶形碳黑,及石墨。然而,自無漏電現象之角度看,半導體背面用膜2較佳為不導電的。
此外,覆晶型半導體背面用膜2或半導體背面用切晶帶一體膜1可以捲繞成捲筒的形式形成,或可以片(膜)層壓在一起的形式形成。舉例而言,在膜具有捲繞成捲筒之形式的情況下,根據需要以用隔離物保護半導體背面用膜2或半導體背面用膜2與切晶帶3之層壓物的狀態將膜捲繞成捲筒,藉以該膜可製備為呈捲繞成捲筒之狀態或形式的半導體背面用膜2或半導體背面用切晶帶一體膜1。就此而言,呈捲繞成捲筒之狀態或形式的半導體背面用切晶帶一體膜1可由基底材料31、形成於基底材料31之一個表面上的壓敏性黏著層32、形成於壓敏性黏著層32上之半導體背面用膜2及形成於基底材料31之另一表面上的可釋放處理層(背面處理層)建構而成。
順便提及,半導體背面用切晶帶一體膜1之厚度(半導體背面用膜之厚度與包括基底材料31及壓敏性黏著層32之切晶帶之厚度的總厚度)可例如選自8 μm至1,500 μm範圍,且其較佳為20 μm至850 μm,更佳為31 μm至500 μm且特別較佳為47 μm至330 μm。
就此而言,在半導體背面用切晶帶一體膜1中,藉由控制半導體背面用膜2之厚度與切晶帶3之壓敏性黏著層32之厚度的比率或半導體背面用膜2之厚度與切晶帶之厚度(基底材料31與壓敏性黏著層32之總厚度)的比率,可改良切晶步驟中的切晶特性、拾取步驟中的拾取特性及其類似特性,且可自半導體晶圓之切晶步驟至半導體晶片之覆晶接合步驟有效使用半導體背面用切晶帶一體膜1。
使用圖1中所示之半導體背面用切晶帶一體膜1作為一實例來描述本發明實施例之半導體背面用切晶帶一體膜之製造方法。首先,可利用習知的膜形成方法形成基底材料31。膜形成方法之實例包括壓光膜形成方法、有機溶劑鑄造方法、緊密密封系統膨脹擠出方法、T形模擠出方法、共擠出方法及乾燥層壓方法。
接著,將壓敏性黏著劑組合物施加於基底材料31上且在其上加以乾燥(且視情況在加熱下發生交聯)以形成壓敏性黏著層32。塗佈系統包括輥式塗佈(roll coating)、絲網塗佈(screen coating)、凹版塗佈(gravure coating)等。壓敏性黏著劑組合物可直接施加於基底材料31上以在基底材料31上形成壓敏性黏著層32;或壓敏性黏著劑組合物可施加於表面已作潤滑處理之釋放片或其類似物上以在其上形成壓敏性黏著層32,且壓敏性黏著層32可轉移至基底材料31上。由此形成在基底材料31上形成有壓敏性黏著層32的切晶帶3。
另一方面,如下形成塗層:將用於形成半導體背面用膜2之形成材料施加於釋放紙上以便在乾燥之後具有規定厚度且在規定條件下進一步乾燥(在必需熱固化的情況下,根據需要進行熱處理且乾燥)。半導體背面用膜2係藉由將該塗層轉移至壓敏性黏著層32上來形成於壓敏性黏著層32上。就此而言,半導體背面用膜2亦可藉由將用於形成半導體背面用膜2之形成材料直接施加於壓敏性黏著層32上,隨後在規定條件下乾燥(在必需熱固化的情況下,根據需要進行熱處理且乾燥)來形成於壓敏性黏著層32上。因此可獲得本發明之半導體背面用切晶帶一體膜1。順便提及,在形成半導體背面用膜2時進行熱固化的情況下,重要的是使熱固化進行至實現部分固化之程度,但較佳不進行熱固化。
本發明之半導體背面用切晶帶一體膜1可在製造半導體裝置(包括覆晶式連接步驟)時作適當使用。亦即,本發明之半導體背面用切晶帶一體膜1係在製造覆晶安裝型半導體裝置時使用且從而製造呈半導體背面用切晶帶一體膜1之半導體背面用膜2附著於半導體晶片背面之狀態或形式的覆晶安裝型半導體裝置。因此,本發明之半導體背面用切晶帶一體膜1可用於覆晶安裝型半導體裝置(呈半導體晶片藉由覆晶接合方法固著於黏附體(諸如基板)之狀態或形式的半導體裝置)。
如同在半導體背面用切晶帶一體膜1中,半導體背面用膜2亦可用於覆晶安裝型半導體裝置(呈半導體晶片以覆晶接合方法固著於黏附體(諸如基板或其類似物)之狀態或形式的半導體裝置)。
半導體晶圓不受特別限制,只要其為已知或常用的半導體晶圓即可,且可在由各種材料製成的半導體晶圓中作適當選擇且加以使用。在本發明中,宜使用矽晶圓作為半導體晶圓。
將參考圖2A至圖2D描述根據本發明製造半導體裝置的方法。圖2A至圖2D為顯示在使用半導體背面用切晶帶一體膜1之情況下製造半導體裝置之方法的橫截面示意圖。
根據半導體裝置製造方法,可使用半導體背面用切晶帶一體膜1製造半導體裝置。具體而言,該方法包含將半導體晶圓附著於半導體背面用切晶帶一體膜上之步驟、切割半導體晶圓之步驟、拾取藉由切晶所獲得之半導體元件之步驟及將半導體元件覆晶式連接於黏附體上之步驟。
順便提及,當使用半導體背面用膜2時,亦可根據使用半導體背面用切晶帶一體膜1製造半導體裝置之方法製造半導體裝置。舉例而言,將半導體背面用膜2附著於切晶帶且與切晶帶形成一體以製成半導體背面用切晶帶一體膜,且可使用該切晶帶一體膜製造半導體裝置。在此情況下,使用半導體背面用膜2製造半導體裝置之方法包含構成使用上述半導體背面用切晶帶一體膜製造半導體裝置之方法的步驟,及與之組合的以半導體背面用膜可與切晶帶之壓敏性黏著層接觸的方式附著半導體背面用膜與切晶帶之另一步驟。
或者,半導體背面用膜2可藉由直接附著於半導體晶圓而不與切晶帶形成一體來使用。在此情況下,使用半導體背面用膜2製造半導體裝置之方法包含將半導體背面用膜附著於半導體晶圓之步驟、隨後為以半導體背面用膜可與切晶帶之壓敏性黏著層接觸的方式將切晶帶附著於已附著有半導體晶圓之半導體背面用膜的步驟,以代替使用上述半導體背面用切晶帶一體膜製造半導體裝置之方法中將半導體晶圓附著於半導體背面用切晶帶一體膜上的步驟。
在其另一應用實施例中,半導體背面用膜2可直接附著於藉由將半導體晶圓切割成個別半導體晶片所製得的半導體晶片。在此情況下,使用半導體背面用膜2製造半導體裝置的方法至少包含例如將切晶帶附著於半導體晶圓的步驟、切割半導體晶圓的步驟、拾取藉由切晶所獲得之半導體元件的步驟、覆晶式連接半導體元件至黏附體上的步驟及將半導體背面用膜附著於半導體元件的步驟。
首先,如圖2A中所示,宜剝離視情況提供於半導體背面用切晶帶一體膜1之半導體背面用膜2上的隔離物,且將半導體晶圓4附著於半導體背面用膜2上以藉由黏著及固持加以固著(安裝步驟)。此時,半導體背面用膜2呈未固化狀態(包括半固化狀態)。此外,將半導體背面用切晶帶一體膜1附著於半導體晶圓4之背面。半導體晶圓4之背面意謂與電路面相對的面(亦稱作非電路面、非電極形成面等)。附著方法不受特別限制,但壓力接合方法較佳。壓力接合通常在用加壓構件(諸如壓輥)加壓下進行。
接著,如圖2B中所示,切割半導體晶圓4。由此將半導體晶圓4切成規定大小且個別化(形成小塊)以製造半導體晶片5。舉例而言,根據標準方法自半導體晶圓4之電路面一側進行切晶。此外,該步驟可採用例如稱為全切(full-cut)之切割方法,其形成達到半導體背面用切晶帶一體膜1的切口。用於該步驟中的切晶設備不受特別限制,且可使用習知的設備。此外,由於半導體晶圓4被具有半導體背面用膜之半導體背面用切晶帶一體膜1黏著且固著,因此可抑制晶片開裂及晶片飛出,而且亦可抑制半導體晶圓4損壞。就此而言,當半導體背面用膜2係由含有環氧樹脂之樹脂組合物形成時,可在切割面抑制或防止黏著劑自半導體背面用膜之黏著層擠出,即使在藉由切晶來切割時亦然。因此,可抑制或防止切割面本身再附著(阻塞)且從而可進一步方便地執行下文所提及之拾取。
在展開半導體背面用切晶帶一體膜1之情況下,可使用習知的展開設備執行展開。展開設備具有能夠推動半導體背面用切晶帶一體膜1向下通過切晶環的環形外環及直徑小於該外環且支撐半導體背面用切晶帶一體膜的內環。由於展開步驟,因此可防止相鄰半導體晶片在下文所述及之拾取步驟中因彼此接觸而損壞。
為收集黏著且固著於半導體背面用切晶帶一體膜1之半導體晶片5,如圖2C中所示執行半導體晶片5之拾取,以將半導體晶片5隨半導體背面用膜2一起自切晶帶3剝離。拾取方法不受特別限制,且可採用習知的各種方法。舉例而言,可提及的一種方法包括用針自半導體背面用切晶帶一體膜1之基底材料31一側上推各半導體晶片5及用拾取設備拾取所推起之半導體晶片5。就此而言,所拾取之半導體晶片5之背面用半導體背面用膜2保護。
根據覆晶接合方法(覆晶安裝方法),使所拾取之半導體晶片5固著於黏附體(諸如基板)上,如圖2D中所示。具體而言,根據普通方法,以半導體晶片5之電路面(此面可稱作前表面、電路圖案形成表面或電極形成表面)可面向黏附體6的方式使半導體晶片5固著於黏附體6上。舉例而言,當抵靠附著於黏附體6之連接墊之接合導電材料(例如焊料)61加壓半導體晶片5之電路面一側上所形成的凸塊51時,使導電材料熔融以保證半導體晶片5與黏附體6之間的電連接且藉此使半導體晶片5固著於黏附體6(覆晶接合步驟)。在此情況下,在半導體晶片5與黏附體6之間形成間隙,且間隙距離一般可為30 μm至300 μm左右。在半導體晶片5已覆晶接合(覆晶式連接)於黏附體6上之後,重要的是淨化半導體晶片5與黏附體6之間的界面及間隙且藉由用囊封材料(例如囊封樹脂)填充間隙來將兩者密封住。
作為黏附體6,可使用各種基板,諸如引線框架及電路板(諸如佈線電路板)。基板材料不受特別限制且可提及陶瓷基板及塑膠基板。塑膠基板之實例包括環氧樹脂基板、雙順丁烯二醯亞胺三嗪基板及聚醯亞胺基板。
在覆晶接合步驟中,凸塊材料及導電材料不受特別限制且其實例包括焊料(合金),諸如基於錫-鉛之金屬材料、基於錫-銀之金屬材料、基於錫-銀-銅之金屬材料、基於錫-鋅之金屬材料及基於錫-鋅-鉍之金屬材料,以及基於金之金屬材料及基於銅之金屬材料。
順便提及,在覆晶接合步驟中,使導電材料熔融以使半導體晶片5之電路面一側上的凸塊與黏附體6表面上之導電材料連接。導電材料熔融溫度通常為約260℃(例如250℃至300℃)。藉由由環氧樹脂或其類似物形成半導體背面用膜,可使本發明之半導體背面用切晶帶一體膜具有能夠在覆晶接合步驟中耐受高溫的耐熱性。
在該步驟中,較佳為洗滌半導體晶片5與黏附體6之間的相對面(電極形成面)及間隙。在洗滌時所用之洗滌液不受特別限制且其實例包括有機洗滌液及水性洗滌液。本發明之半導體背面用切晶帶一體膜中的半導體背面用膜具有針對洗滌液的耐溶劑性且實質上不溶於此等洗滌液中。因此,如上所述,可使用各種洗滌液作為洗滌液且可利用不需要任何特別洗滌液之任何習知方法實現洗滌。
接著,執行囊封步驟以囊封覆晶接合型半導體晶片5與黏附體6之間的間隙。囊封步驟係使用囊封樹脂執行。此情形下之囊封條件不受特別限制,但通常藉由在175℃下加熱60秒至90秒來執行囊封樹脂之熱固化(回焊)。在本發明中,固化不受限於此且可例如在165℃至185℃下執行數分鐘。在此步驟中進行熱處理時,不僅進行囊封樹脂之熱固化,而且同時進行半導體背面用膜2之熱固化。因此,囊封樹脂與半導體背面用膜2均隨著熱固化進展而固化且收縮。因此,半導體背面用膜2固化及收縮可抵消或緩解半導體晶片5因囊封樹脂固化及收縮而受到的應力。此外,由該步驟可使半導體背面用膜2完全或幾乎完全熱固化且可以極佳的黏著性附著於半導體元件背面。此外,由於本發明之半導體背面用膜2即使該膜呈未固化狀態時亦可在囊封步驟中隨囊封材料一起被熱固化,因此不需要添加熱固化半導體背面用膜2之新步驟。
囊封樹脂不受特別限制,只要該材料為具有絕緣特性之樹脂(絕緣樹脂)即可,且可在諸如囊封樹脂之已知囊封材料中作適當選擇且加以使用。囊封樹脂較佳為具有彈性之絕緣樹脂。囊封樹脂之實例包括含有環氧樹脂之樹脂組合物。作為環氧樹脂,可提及上文舉例說明的環氧樹脂。此外,由含有環氧樹脂之樹脂組合物構成的囊封樹脂可含有除環氧樹脂以外之熱固性樹脂(諸如酚樹脂),或除環氧樹脂以外,亦含有熱塑性樹脂。順便提及,亦可使用酚樹脂作為環氧樹脂之固化劑,且作為此種酚樹脂,可提及上文舉例說明的酚樹脂。
根據使用半導體背面用切晶帶一體膜1或半導體背面用膜2製造之半導體裝置(覆晶安裝型半導體裝置),將半導體背面用膜附著於半導體晶片背面,且因此可施加具有極佳可見度的雷射標記。特定而言,即使當標記法為雷射標記法時,亦可施加具有極佳對比率的雷射標記,且可以良好可見度觀察到藉由雷射標記所施加之各種資訊(例如文字資訊及圖形資訊)。在雷射標記時,可使用已知的雷射標記設備。此外,作為雷射,可使用各種雷射,諸如氣體雷射、固態雷射及液體雷射。特定而言,作為氣體雷射,可使用任何已知的氣體雷射而無特別限制,但二氧化碳雷射(CO2
雷射)及準分子雷射(ArF雷射、KrF雷射、XeCl雷射、XeF雷射等)為適合的。作為固態雷射,可使用任何已知的固態雷射而無特別限制,但YAG雷射(諸如Nd:YAG雷射)及YVO4
雷射為適合的。
在對半導體背面用膜2進行雷射標記之後,可根據需要進行熱處理(在雷射標記之後進行的回焊步驟)。熱處理條件不受特別限制,但其可根據JEDEC固態技術學會(JEDEC Solid State Technology Association;JEDEC)之標準執行。舉例而言,其可在210℃至270℃範圍內的溫度(上限)下執行5至50秒範圍內之時間。由此步驟可將半導體封裝安裝於基板(諸如母板)上。
由於使用本發明之半導體背面用切晶帶一體膜1或半導體背面用膜2所製得的半導體裝置為藉由覆晶安裝方法所安裝而成的半導體裝置,因此該裝置與藉由晶粒接合安裝方法所安裝而成的半導體裝置相比具有薄化且小型化之形狀。因此,該等半導體裝置宜用作各種電子裝置及電子部件或其材料及構件。特定而言,作為使用本發明之覆晶安裝型半導體裝置的電子裝置,可提及所謂的「行動電話」及「PHS」、小型化電腦[例如所謂的「PDA」(手持型終端)、所謂的「筆記型個人電腦」、所謂的「迷你筆記型電腦(Net Book)(商標)」及所謂的「穿戴式電腦」等]、具有整合「行動電話」與電腦之形式的小型化電子裝置、所謂的「數位攝影機(Digital Camera)(商標)」、所謂的「數位視訊攝影機」、小型化電視機、小型化遊戲機、小型化數位音訊播放器、所謂的「電子記事本」、所謂的「電子字典」、用於所謂「電子書」的電子裝置終端、行動電子裝置(便攜式電子裝置),諸如小型化數位型手錶,及其類似物。不必說,亦可提及除行動裝置外的電子裝置(靜態型電子裝置等),例如所謂的「桌上個人電腦」、薄型電視機、記錄及複製用的電子裝置(硬碟記錄器、DVD播放器等)、投影儀、微型機及其類似物。另外,電子部件或用於電子裝置及電子部件的材料及構件不受特別限制且其實例包括用於所謂「CPU」的部件及用於各種記憶裝置的構件(所謂「記憶體」、硬碟等)。
下文將說明性詳述本發明之較佳實例。然而,本發明不限於以下實例,除非該等實例超出本發明主旨。此外,除非另有說明,否則各實例中之份數以重量為基準。
以100份具有丙烯酸乙酯及甲基丙烯酸甲酯作為主要組分的基於丙烯酸酯之聚合物(商標「PARACRON W-197CM」,Negami Chemical Industrial Co.,Ltd.製造)計,將117份環氧樹脂(商標「EPIKOTE 1004」,JER Co. Ltd.製造)、117份酚樹脂(商標「MIREX XLC-4L」,Mitsui Chemicals,Inc.製造)、83份球形二氧化矽(商標「SO-25R」,Admatechs Company Limited製造)、4份染料(商標「Oil Black BS」,Orient Chemical Industries Co.,Ltd.製造)及1.7份熱固化加速催化劑(商標「2PHZ-PW」,Shikoku Chemicals Corporation製造)溶於甲基乙基酮中以製備具有23.6重量%之固體濃度的黏著劑組合物溶液。
將黏著劑組合物溶液施加於作為釋放襯墊(隔離物)的可釋放處理膜上(其中該膜由具有38 μm厚度之聚對苯二甲酸乙二酯膜構成且已進行聚矽氧釋放處理),接著在130℃下乾燥2分鐘以製備具有20 μm厚度(平均厚度)之覆晶型半導體背面用膜。
在實例2至實例16及比較實例1及比較實例2中,以與實例1相同之方式製備覆晶型半導體背面用膜,例外之處為改變個別摻合量,如表1中所示。在表1中,空白表示0重量份。所得覆晶型半導體背面用膜各自之厚度顯示於表2中。
熱固化之前的覆晶型半導體背面用膜在熱固化時在23℃至165℃範圍內的體積收縮率如下測定。
首先,為量測實例1至16及比較實例1及2之覆晶型半導體背面用膜各自之體積收縮率,製備具有60 μm厚度之各覆晶型半導體背面用膜。接著,製備藉由將具有60 μm厚度之覆晶型半導體背面用膜層壓於具有10 mm×10 mm大小及0.05 mm厚度之半導體晶片上所獲得的樣品,且量測在165℃條件下固化2小時時的翹曲度「X」。翹曲度係根據隨後所述及之方法量測。隨後,對於將具有60 μm厚度之覆晶型半導體背面用膜層壓於具有10 mm×10 mm大小及0.05 mm厚度之半導體晶片上的構造,經由改變其假定之線性膨脹係數來進行模擬實驗,以測定翹曲度為X時的線性膨脹係數。接著,藉由使線性膨脹係數增至三倍來獲得體積收縮率。在此情形下,在模擬中溫度在165℃至23℃範圍內改變,且線性膨脹係數在此溫度範圍內假定為恆定。
如下獲得拉伸儲能模數:製備熱固化之半導體背面用膜,及在10 mm樣品寬度、22.5 mm樣品長度、0.2 mm樣品厚度、1 Hz頻率及10℃/分鐘之溫度升高速率的條件下,在氮氣氛圍下,在規定溫度(23℃)下使用動態黏彈性量測設備「Solid Analyzer RS A2」(Rheometrics Co. Ltd.製造)量測拉伸模式下之模數。結果顯示於表2中。
在首先自半導體背面用切晶帶一體膜剝離隔離物之後,藉由在70℃下輥壓接合將半導體晶圓(直徑:8吋,厚度:200 μm;矽鏡面晶圓)附著於半導體背面用膜上。此外,對半導體晶圓進行切割。以全切方式進行切晶,以使得晶片大小為10 mm2
。就此而言,附著條件及切割條件如下。
附著設備:商標「MA-3000III」,Nitto Seiki Co.,Ltd.製造
附著速度:10 mm/min
附著壓力:0.15 MPa
附著時之級溫:70℃
切晶設備:商標「DFD-6361」,DISCO Corporation製造
切晶環:「2-8-1」(DISCO Corporation製造)
切晶速度:30 mm/sec
切晶刀片:
Z1;「203O-SE 27HCDD」,DISCO Corporation製造
Z2;「203O-SE 27HCBB」,DISCO Corporation製造
切晶刀片轉速:
Z1;40,000 r/min
Z2;45,000 r/min
切割方法:步進式切割
晶圓晶片大小:10.0 mm2
接著,由切晶所獲得之半導體晶片隨覆晶型半導體背面用膜一起藉由用針自半導體背面用切晶帶一體膜之切晶帶一側上推而自壓敏性黏著層拾取。拾取條件如下。
拾取設備:商標「SPA-300」,Shinkawa Co.,Ltd.製造
拾取針數目:9根針
針上推速度:20 mm/s
針上推距離:500 μm
拾取時間:1秒
切晶帶展開量:3 mm
隨後,將半導體晶片覆晶接合於BT基板[使用BT樹脂(基於雙順丁烯二醯亞胺三嗪之樹脂)的基板,Mitsubishi Gas Chemical Co.,Inc.製造]上。在此情形下,接合如下進行:將半導體晶片之電路面朝向BT基板且使形成於半導體晶片之電路面上的凸塊與附著於BT基板之連接墊的接合(焊接)用導電材料接觸,且提高溫度至260℃以使導電材料在壓力下熔融,隨後冷卻至室溫。此外,在半導體晶片與BT基板之間的間隙內填入作為囊封樹脂之側填滿材料。側填滿材料(囊封材料)之厚度為20 μm。接著,量測半導體封裝之翹曲度(回焊之前之半導體封裝的翹曲度)。結果顯示於表2中。
隨後,半導體封裝在260℃條件下加熱30分鐘,接著量測半導體封裝之翹曲度(回焊之後之半導體封裝的翹曲度)。結果顯示於表2中。
如下量測翹曲度:首先以BT基板處於下側的方式將半導體封裝置放於平板上,且量測BT基板自平板***之高度,亦即翹曲度(μm)。使用接觸型表面粗糙度儀(DEKTAK 8,Veeco Instruments Inc.製造),在1.5 mm/s量測速率及1 g負荷之條件下進行量測。作為量測結果,翹曲度為100 μm或小於100 μm的情況評為「極優」,翹曲度為100 μm或大於100 μm至500 μm或小於500 μm的情況評為「良好」,翹曲度為500 μm或大於500 μm至1,000 μm或小於1,000 μm的情況評為「中等」,且翹曲度大於1,000 μm的情況評為「不良」。
如自表2所瞭解,可證實,當半導體背面用膜符合以下條件時,可抑制半導體封裝之翹曲度:熱固化之前之覆晶型半導體背面用膜在熱固化時在23℃至165℃範圍內的體積收縮率為100 ppm/℃或大於100 ppm/℃至400 ppm/℃或小於400ppm/℃,如在實例1至16中。
雖然已參考特定實施例詳細描述了本發明,但熟習此項技術者應顯而易知在不偏離本發明之範疇的情況下可作出各種變更及修改。
本申請案係基於2010年7月28日申請的日本專利申請案第2010-169501號,該案之全部內容以引用的方式併入本文中。
1...半導體背面用切晶帶一體膜
2...半導體背面用膜
3...切晶帶
4...半導體晶圓
5...半導體晶片
6...黏附體
31...基底材料
32...壓敏性黏著層
33...對應於半導體晶圓附著部分之部分
51...形成於半導體晶片5之電路面一側的凸塊
61...附著於黏附體6之連接墊的結合用導電材料
圖1為顯示本發明之半導體背面用切晶帶一體膜之一個實施例的橫截面示意圖。
圖2A至2D為顯示使用本發明之半導體背面用切晶帶一體膜製造半導體裝置之方法之一個實施例的橫截面示意圖。
1...半導體背面用切晶帶一體膜
2...半導體背面用膜
3...切晶帶
31...基底材料
32...壓敏性黏著層
33...對應於半導體晶圓附著部分之部分
Claims (7)
- 一種用以在覆晶接合於黏附體上之半導體元件背面上形成的覆晶型半導體背面用膜,其特徵在於:熱固化之前的該覆晶型半導體背面用膜在其熱固化時,在23℃至165℃範圍內之體積收縮率為100ppm/℃以上至400ppm/℃以下;且熱固化之後在23℃下之拉伸儲能模數為1GPa以上至5GPa以下。
- 如請求項1之覆晶型半導體背面用膜,其中該覆晶型半導體背面用膜之厚度在10μm以上至40μm以下之範圍內。
- 一種半導體背面用切晶帶一體型膜,其係如請求項1或2之覆晶型半導體背面用膜在切晶帶上積層之半導體背面用切晶帶一體型膜,該切晶帶之構造係在基底材料上積層有壓敏性黏著層,且該覆晶型半導體背面用膜被積層在該切晶帶之壓敏性黏著層上。
- 一種使用如請求項3之半導體背面用切晶帶一體型膜之半導體裝置之製造方法,該方法具備:使半導體晶圓附著於該半導體背面用切晶帶一體型膜之該覆晶型半導體背面用膜上,切割該半導體晶圓以形成半導體元件,將該半導體元件隨該覆晶型半導體背面用膜一起自該切晶帶之該壓敏性黏著層剝離,及 覆晶接合該半導體元件至該黏附體上。
- 如請求項4之半導體裝置之製造方法,其中該覆晶接合之步驟中,將囊封樹脂填入覆晶接合於該黏附體上之該半導體元件與該黏附體之間的間隙後,使該囊封樹脂熱固化。
- 如請求項5之半導體裝置之製造方法,其中該囊封樹脂包含環氧樹脂。
- 一種覆晶型半導體裝置,其係藉由如請求項4至6中任一項之方法製造。
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JP4612450B2 (ja) | 2005-03-28 | 2011-01-12 | 株式会社東芝 | 積層型半導体装置の製造方法 |
JP4876451B2 (ja) | 2005-06-27 | 2012-02-15 | 日立化成工業株式会社 | 接着シート |
JP4865312B2 (ja) | 2005-12-05 | 2012-02-01 | 古河電気工業株式会社 | チップ用保護膜形成用シート |
KR100713928B1 (ko) * | 2006-02-08 | 2007-05-07 | 주식회사 하이닉스반도체 | 반도체 칩 패키지 |
JP2007250970A (ja) | 2006-03-17 | 2007-09-27 | Hitachi Chem Co Ltd | 半導体素子裏面保護用フィルム及びそれを用いた半導体装置とその製造法 |
JP4846406B2 (ja) | 2006-03-28 | 2011-12-28 | リンテック株式会社 | チップ用保護膜形成用シート |
JP2008006386A (ja) | 2006-06-29 | 2008-01-17 | Furukawa Electric Co Ltd:The | チップ用保護膜形成用シートによる保護膜形成方法。 |
JP2008166451A (ja) | 2006-12-27 | 2008-07-17 | Furukawa Electric Co Ltd:The | チップ保護用フィルム |
JP4932527B2 (ja) * | 2007-02-21 | 2012-05-16 | 旭化成イーマテリアルズ株式会社 | ポリオルガノシロキサン組成物 |
JP4602450B2 (ja) | 2008-12-02 | 2010-12-22 | 日東電工株式会社 | 半導体装置製造用フィルム及びその製造方法 |
-
2010
- 2010-07-28 JP JP2010169501A patent/JP5384443B2/ja active Active
-
2011
- 2011-07-27 KR KR1020110074666A patent/KR20120011822A/ko active Application Filing
- 2011-07-27 US US13/191,791 patent/US9293387B2/en not_active Expired - Fee Related
- 2011-07-27 TW TW100126668A patent/TWI437072B/zh active
- 2011-07-28 CN CN201110217098.2A patent/CN102376611B/zh active Active
-
2015
- 2015-08-04 KR KR1020150109907A patent/KR20150097446A/ko not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI734346B (zh) * | 2019-09-25 | 2021-07-21 | 大陸商天津德高化成新材料股份有限公司 | 用於潮氣敏感的高色域背光應用的晶片級封裝結構及製造方法 |
Also Published As
Publication number | Publication date |
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CN102376611A (zh) | 2012-03-14 |
JP2012033554A (ja) | 2012-02-16 |
JP5384443B2 (ja) | 2014-01-08 |
TW201207080A (en) | 2012-02-16 |
US9293387B2 (en) | 2016-03-22 |
KR20120011822A (ko) | 2012-02-08 |
US20120025400A1 (en) | 2012-02-02 |
KR20150097446A (ko) | 2015-08-26 |
CN102376611B (zh) | 2015-08-05 |
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