CN101884094B - 氮化物半导体晶片的加工方法和氮化物半导体晶片 - Google Patents
氮化物半导体晶片的加工方法和氮化物半导体晶片 Download PDFInfo
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- Y10S438/928—Front and rear surface processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/959—Mechanical polishing of wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
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- Chemical & Material Sciences (AREA)
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- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (5)
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JP2008045425 | 2008-02-27 | ||
JP2008-045425 | 2008-02-27 | ||
JP2009026834A JP4395812B2 (ja) | 2008-02-27 | 2009-02-09 | 窒化物半導体ウエハ−加工方法 |
JP2009-026834 | 2009-02-09 | ||
PCT/JP2009/053112 WO2009107567A1 (ja) | 2008-02-27 | 2009-02-16 | 窒化物半導体ウエハーの加工方法と窒化物半導体ウエハー及び窒化物半導体デバイスの製造方法並びに窒化物半導体デバイス |
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CN2013100115547A Division CN103122485A (zh) | 2008-02-27 | 2009-02-16 | 氮化物半导体晶片 |
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CN101884094A CN101884094A (zh) | 2010-11-10 |
CN101884094B true CN101884094B (zh) | 2013-02-13 |
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CN2009801012126A Expired - Fee Related CN101884094B (zh) | 2008-02-27 | 2009-02-16 | 氮化物半导体晶片的加工方法和氮化物半导体晶片 |
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EP (1) | EP2246877A4 (zh) |
JP (1) | JP4395812B2 (zh) |
KR (1) | KR20100123813A (zh) |
CN (2) | CN103122485A (zh) |
DE (1) | DE202009002734U1 (zh) |
TW (1) | TWI433224B (zh) |
WO (1) | WO2009107567A1 (zh) |
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CN103122485A (zh) | 2013-05-29 |
DE202009002734U1 (de) | 2009-11-19 |
EP2246877A4 (en) | 2013-10-30 |
US8183669B2 (en) | 2012-05-22 |
US7872331B2 (en) | 2011-01-18 |
WO2009107567A1 (ja) | 2009-09-03 |
EP2246877A1 (en) | 2010-11-03 |
KR20100123813A (ko) | 2010-11-25 |
US20100270649A1 (en) | 2010-10-28 |
JP4395812B2 (ja) | 2010-01-13 |
CN101884094A (zh) | 2010-11-10 |
US20120184108A1 (en) | 2012-07-19 |
JP2009231814A (ja) | 2009-10-08 |
TWI433224B (zh) | 2014-04-01 |
US20120043645A1 (en) | 2012-02-23 |
US20110049679A1 (en) | 2011-03-03 |
US8101523B2 (en) | 2012-01-24 |
TW201001514A (en) | 2010-01-01 |
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