JP6149988B2 - 炭化珪素単結晶基板 - Google Patents
炭化珪素単結晶基板 Download PDFInfo
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- JP6149988B2 JP6149988B2 JP2016151317A JP2016151317A JP6149988B2 JP 6149988 B2 JP6149988 B2 JP 6149988B2 JP 2016151317 A JP2016151317 A JP 2016151317A JP 2016151317 A JP2016151317 A JP 2016151317A JP 6149988 B2 JP6149988 B2 JP 6149988B2
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- Prior art keywords
- silicon carbide
- single crystal
- carbide single
- crystal substrate
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 title claims description 98
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 95
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 92
- 239000000758 substrate Substances 0.000 title claims description 91
- 230000002093 peripheral effect Effects 0.000 claims description 59
- 238000000227 grinding Methods 0.000 claims description 32
- 239000006061 abrasive grain Substances 0.000 description 25
- 229910003460 diamond Inorganic materials 0.000 description 23
- 239000010432 diamond Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000011230 binding agent Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Images
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- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
まずグラファイトからなるルツボ内に単結晶炭化珪素からなる種結晶と、炭化珪素からなる原料粉末とが挿入される。次に、原料粉末が加熱されることにより炭化珪素が昇華し、種結晶上に再結晶する。このとき、所望の不純物、たとえば窒素などが導入されつつ再結晶が進行する。そして、種結晶上に所望の大きさの結晶が成長した時点で加熱を停止し、容器内から単結晶炭化珪素の結晶が取り出される。
Claims (1)
- 第1の面と、前記第1の面に対向する第2の面と、前記第1の面および前記第2の面に挟まれた縁周部とを備え、
前記縁周部の表面には複数の研削痕が形成されており、
前記第1の面と平行な方向における、前記縁周部の最外周端部から前記複数の研削痕のうち前記縁周部の最内周側に位置する前記研削痕までの距離である面取り幅が50μm以上400μm以下であり、
前記縁周部の前記表面の算術平均粗さは0.07μm以上1μm以下であり、
前記縁周部は結晶格子が乱れた層である加工変質層を含み、
前記加工変質層の最大厚さは0.5μm以上5μm以下である、炭化珪素単結晶基板。
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JP2016151317A JP6149988B2 (ja) | 2016-08-01 | 2016-08-01 | 炭化珪素単結晶基板 |
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JP2016151317A JP6149988B2 (ja) | 2016-08-01 | 2016-08-01 | 炭化珪素単結晶基板 |
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JP2012088916A Division JP5982971B2 (ja) | 2012-04-10 | 2012-04-10 | 炭化珪素単結晶基板 |
Publications (2)
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JP2017005255A JP2017005255A (ja) | 2017-01-05 |
JP6149988B2 true JP6149988B2 (ja) | 2017-06-21 |
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JP2016151317A Expired - Fee Related JP6149988B2 (ja) | 2016-08-01 | 2016-08-01 | 炭化珪素単結晶基板 |
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JP (1) | JP6149988B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110874018A (zh) * | 2018-09-04 | 2020-03-10 | 长鑫存储技术有限公司 | 一种光刻胶涂布设备及涂布方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008177287A (ja) * | 2007-01-17 | 2008-07-31 | Hitachi Cable Ltd | 化合物半導体ウェハ |
JP4395812B2 (ja) * | 2008-02-27 | 2010-01-13 | 住友電気工業株式会社 | 窒化物半導体ウエハ−加工方法 |
JP5040977B2 (ja) * | 2009-09-24 | 2012-10-03 | 住友電気工業株式会社 | 窒化物半導体基板、半導体装置およびそれらの製造方法 |
WO2011161906A1 (ja) * | 2010-06-21 | 2011-12-29 | 三菱電機株式会社 | 炭化珪素半導体素子の製造方法と製造装置 |
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- 2016-08-01 JP JP2016151317A patent/JP6149988B2/ja not_active Expired - Fee Related
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