CN101740564A - 薄膜晶体管衬底和显示装置 - Google Patents
薄膜晶体管衬底和显示装置 Download PDFInfo
- Publication number
- CN101740564A CN101740564A CN200910208848A CN200910208848A CN101740564A CN 101740564 A CN101740564 A CN 101740564A CN 200910208848 A CN200910208848 A CN 200910208848A CN 200910208848 A CN200910208848 A CN 200910208848A CN 101740564 A CN101740564 A CN 101740564A
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- Prior art keywords
- capacitor
- electrode
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- film transistor
- top electrode
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- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
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- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Dram (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008284621A JP4844617B2 (ja) | 2008-11-05 | 2008-11-05 | 薄膜トランジスタ基板および表示装置 |
JP2008-284621 | 2008-11-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101740564A true CN101740564A (zh) | 2010-06-16 |
CN101740564B CN101740564B (zh) | 2012-09-26 |
Family
ID=42130301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009102088482A Active CN101740564B (zh) | 2008-11-05 | 2009-11-05 | 薄膜晶体管衬底和显示装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8237162B2 (zh) |
JP (1) | JP4844617B2 (zh) |
CN (1) | CN101740564B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102544064A (zh) * | 2010-12-13 | 2012-07-04 | 索尼公司 | 使用氧化物半导体的器件、显示装置、和电子设备 |
CN103165676A (zh) * | 2011-12-13 | 2013-06-19 | 元太科技工业股份有限公司 | 场效晶体管 |
CN103779355A (zh) * | 2012-10-17 | 2014-05-07 | 三星显示有限公司 | 薄膜晶体管基板及包含此的有机发光显示装置 |
CN110707096A (zh) * | 2019-09-18 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | 一种阵列基板及其制备方法、显示装置 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010056075A (ja) * | 2008-07-29 | 2010-03-11 | Sony Corp | 発光素子及び有機エレクトロルミネッセンス表示装置 |
JP4844617B2 (ja) * | 2008-11-05 | 2011-12-28 | ソニー株式会社 | 薄膜トランジスタ基板および表示装置 |
US8743095B2 (en) * | 2009-09-30 | 2014-06-03 | Sharp Kabushiki Kaisha | Electronic apparatus and display panel |
CN105070717B (zh) * | 2009-10-30 | 2019-01-01 | 株式会社半导体能源研究所 | 半导体装置 |
KR20190093705A (ko) * | 2009-11-27 | 2019-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작방법 |
CN102906804B (zh) * | 2010-05-24 | 2014-03-12 | 夏普株式会社 | 薄膜晶体管基板及其制造方法 |
WO2011162104A1 (en) * | 2010-06-25 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
US8766253B2 (en) * | 2010-09-10 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9230994B2 (en) * | 2010-09-15 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US8957468B2 (en) * | 2010-11-05 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Variable capacitor and liquid crystal display device |
TWI432865B (zh) | 2010-12-01 | 2014-04-01 | Au Optronics Corp | 畫素結構及其製作方法 |
WO2012073862A1 (ja) * | 2010-12-01 | 2012-06-07 | シャープ株式会社 | 半導体装置、tft基板、ならびに半導体装置およびtft基板の製造方法 |
TWI562142B (en) * | 2011-01-05 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Storage element, storage device, and signal processing circuit |
JP5794879B2 (ja) | 2011-09-29 | 2015-10-14 | ルネサスエレクトロニクス株式会社 | 半導体装置及びそれを用いたSiPデバイス |
TWI463670B (zh) | 2012-03-28 | 2014-12-01 | E Ink Holdings Inc | 主動元件 |
US20140014948A1 (en) * | 2012-07-12 | 2014-01-16 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
JP2014199899A (ja) * | 2012-08-10 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI575663B (zh) | 2012-08-31 | 2017-03-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
CN104769658B (zh) * | 2012-10-31 | 2017-03-08 | 夏普株式会社 | 电致发光基板及其制造方法、电致发光显示面板、电致发光显示装置 |
US9905585B2 (en) * | 2012-12-25 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising capacitor |
US9704894B2 (en) * | 2013-05-10 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device including pixel electrode including oxide |
JP6475424B2 (ja) * | 2013-06-05 | 2019-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10008513B2 (en) * | 2013-09-05 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102294507B1 (ko) * | 2013-09-06 | 2021-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6330220B2 (ja) * | 2014-03-27 | 2018-05-30 | 株式会社Joled | 表示装置、電子機器および基板 |
CN105097710A (zh) * | 2014-04-25 | 2015-11-25 | 上海和辉光电有限公司 | 薄膜晶体管阵列基板及其制造方法 |
Family Cites Families (5)
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JP2006207094A (ja) | 2005-01-31 | 2006-08-10 | Starlite Co Ltd | ドクタ−ナイフ |
JP2008134625A (ja) * | 2006-10-26 | 2008-06-12 | Semiconductor Energy Lab Co Ltd | 半導体装置、表示装置及び電子機器 |
JP2008129314A (ja) * | 2006-11-21 | 2008-06-05 | Hitachi Displays Ltd | 画像表示装置およびその製造方法 |
JP2008233123A (ja) * | 2007-03-16 | 2008-10-02 | Sony Corp | 表示装置 |
JP4844617B2 (ja) * | 2008-11-05 | 2011-12-28 | ソニー株式会社 | 薄膜トランジスタ基板および表示装置 |
-
2008
- 2008-11-05 JP JP2008284621A patent/JP4844617B2/ja active Active
-
2009
- 2009-10-28 US US12/607,190 patent/US8237162B2/en active Active
- 2009-11-05 CN CN2009102088482A patent/CN101740564B/zh active Active
-
2012
- 2012-07-17 US US13/550,995 patent/US8426862B2/en active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102544064A (zh) * | 2010-12-13 | 2012-07-04 | 索尼公司 | 使用氧化物半导体的器件、显示装置、和电子设备 |
CN102544064B (zh) * | 2010-12-13 | 2016-08-17 | 株式会社日本有机雷特显示器 | 使用氧化物半导体的器件、显示装置、和电子设备 |
CN103165676A (zh) * | 2011-12-13 | 2013-06-19 | 元太科技工业股份有限公司 | 场效晶体管 |
US9236494B2 (en) | 2011-12-13 | 2016-01-12 | E Ink Holdings Inc. | Field effect transistor |
CN103779355A (zh) * | 2012-10-17 | 2014-05-07 | 三星显示有限公司 | 薄膜晶体管基板及包含此的有机发光显示装置 |
CN103779355B (zh) * | 2012-10-17 | 2019-01-11 | 三星显示有限公司 | 薄膜晶体管基板及包含此的有机发光显示装置 |
CN110707096A (zh) * | 2019-09-18 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | 一种阵列基板及其制备方法、显示装置 |
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US20100109004A1 (en) | 2010-05-06 |
US8237162B2 (en) | 2012-08-07 |
CN101740564B (zh) | 2012-09-26 |
US8426862B2 (en) | 2013-04-23 |
US20120280241A1 (en) | 2012-11-08 |
JP2010114213A (ja) | 2010-05-20 |
JP4844617B2 (ja) | 2011-12-28 |
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