CN101800248B - 薄膜晶体管和显示器件 - Google Patents
薄膜晶体管和显示器件 Download PDFInfo
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- CN101800248B CN101800248B CN201010104366.5A CN201010104366A CN101800248B CN 101800248 B CN101800248 B CN 101800248B CN 201010104366 A CN201010104366 A CN 201010104366A CN 101800248 B CN101800248 B CN 101800248B
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- oxide semiconductor
- semiconductor layer
- drain electrode
- source electrode
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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Abstract
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JP2009027646A JP4752927B2 (ja) | 2009-02-09 | 2009-02-09 | 薄膜トランジスタおよび表示装置 |
JP2009-027646 | 2009-02-09 |
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JP (1) | JP4752927B2 (zh) |
KR (1) | KR101651679B1 (zh) |
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CN1918672A (zh) * | 2004-03-09 | 2007-02-21 | 出光兴产株式会社 | 薄膜晶体管及薄膜晶体管基板及它们的制造方法及使用了它们的液晶显示装置及相关的装置及方法以及溅射靶及使用它成膜的透明导电膜及透明电极及相关的装置及方法 |
US7265384B2 (en) * | 2004-04-28 | 2007-09-04 | Samsung Sdi Co., Ltd. | Thin film transistor and organic electroluminescence display using the same |
CN101335293A (zh) * | 2005-09-29 | 2008-12-31 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
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US20100200843A1 (en) | 2010-08-12 |
JP4752927B2 (ja) | 2011-08-17 |
US8269217B2 (en) | 2012-09-18 |
JP2010183027A (ja) | 2010-08-19 |
US8497504B2 (en) | 2013-07-30 |
CN101800248A (zh) | 2010-08-11 |
US20120043548A1 (en) | 2012-02-23 |
KR20100091108A (ko) | 2010-08-18 |
KR101651679B1 (ko) | 2016-08-26 |
TW201044593A (en) | 2010-12-16 |
TWI412137B (zh) | 2013-10-11 |
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