CN102544064A - 使用氧化物半导体的器件、显示装置、和电子设备 - Google Patents
使用氧化物半导体的器件、显示装置、和电子设备 Download PDFInfo
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- CN102544064A CN102544064A CN2011104156922A CN201110415692A CN102544064A CN 102544064 A CN102544064 A CN 102544064A CN 2011104156922 A CN2011104156922 A CN 2011104156922A CN 201110415692 A CN201110415692 A CN 201110415692A CN 102544064 A CN102544064 A CN 102544064A
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- oxide semiconductor
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- lower interconnect
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010276939A JP5707914B2 (ja) | 2010-12-13 | 2010-12-13 | 酸化物半導体を用いる装置、表示装置、及び、電子機器 |
JPJP2010-276939 | 2010-12-13 | ||
JP2010-276939 | 2010-12-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102544064A true CN102544064A (zh) | 2012-07-04 |
CN102544064B CN102544064B (zh) | 2016-08-17 |
Family
ID=46198432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110415692.2A Active CN102544064B (zh) | 2010-12-13 | 2011-12-13 | 使用氧化物半导体的器件、显示装置、和电子设备 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8476628B2 (zh) |
JP (1) | JP5707914B2 (zh) |
CN (1) | CN102544064B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011070901A1 (en) * | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9356049B2 (en) * | 2013-07-26 | 2016-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device with a transistor on an outer side of a bent portion |
EP4170718A3 (en) | 2021-09-03 | 2023-08-23 | LG Display Co., Ltd. | Display panel and electronic device including same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060091793A1 (en) * | 2004-11-02 | 2006-05-04 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
JP2008103381A (ja) * | 2006-10-17 | 2008-05-01 | Epson Imaging Devices Corp | 半導体装置の製造方法、電気光学装置の製造方法、半導体装置、および電気光学装置 |
CN101740564A (zh) * | 2008-11-05 | 2010-06-16 | 索尼株式会社 | 薄膜晶体管衬底和显示装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0748563B2 (ja) * | 1988-08-01 | 1995-05-24 | シャープ株式会社 | 薄膜トランジスタ装置 |
NL194873C (nl) * | 1992-08-13 | 2003-05-06 | Oki Electric Ind Co Ltd | Dunnefilmtransistorenreeks en daarvan gebruikmakende vloeibare kristalweergeefinrichting. |
JP3231410B2 (ja) * | 1992-08-13 | 2001-11-19 | カシオ計算機株式会社 | 薄膜トランジスタアレイ及びその製造方法 |
JP2002110996A (ja) * | 2000-09-29 | 2002-04-12 | Sharp Corp | アクティブマトリクス基板および液晶表示装置 |
US6653159B2 (en) * | 2001-05-11 | 2003-11-25 | Au Optronics Corp. | Method of fabricating a thin film transistor liquid crystal display |
JP2007157916A (ja) * | 2005-12-02 | 2007-06-21 | Idemitsu Kosan Co Ltd | Tft基板及びtft基板の製造方法 |
TWI424506B (zh) * | 2008-08-08 | 2014-01-21 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
KR101920196B1 (ko) * | 2008-09-19 | 2018-11-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
JP5552753B2 (ja) | 2008-10-08 | 2014-07-16 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
JP2010169754A (ja) * | 2009-01-20 | 2010-08-05 | Toshiba Corp | 画像表示装置 |
WO2011013523A1 (en) * | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2011052748A (ja) * | 2009-09-01 | 2011-03-17 | Chiyoda Seiki:Kk | バルブ開閉表示装置及びこれを備えた調整バルブ |
KR101248459B1 (ko) * | 2009-11-10 | 2013-03-28 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
JP5775712B2 (ja) * | 2010-10-28 | 2015-09-09 | 株式会社ジャパンディスプレイ | 表示装置 |
-
2010
- 2010-12-13 JP JP2010276939A patent/JP5707914B2/ja active Active
-
2011
- 2011-10-17 US US13/317,373 patent/US8476628B2/en active Active
- 2011-12-13 CN CN201110415692.2A patent/CN102544064B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060091793A1 (en) * | 2004-11-02 | 2006-05-04 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
JP2008103381A (ja) * | 2006-10-17 | 2008-05-01 | Epson Imaging Devices Corp | 半導体装置の製造方法、電気光学装置の製造方法、半導体装置、および電気光学装置 |
CN101740564A (zh) * | 2008-11-05 | 2010-06-16 | 索尼株式会社 | 薄膜晶体管衬底和显示装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5707914B2 (ja) | 2015-04-30 |
US8476628B2 (en) | 2013-07-02 |
JP2012129240A (ja) | 2012-07-05 |
US20120146036A1 (en) | 2012-06-14 |
CN102544064B (zh) | 2016-08-17 |
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Owner name: JANPAN ORGANIC RATE DISPLAY CO., LTD. Free format text: FORMER OWNER: SONY CORP Effective date: 20150714 |
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Effective date of registration: 20150714 Address after: Tokyo, Japan Applicant after: JOLED Inc. Address before: Tokyo, Japan Applicant before: Sony Corp. |
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Effective date of registration: 20231123 Address after: Tokyo, Japan Patentee after: Japan Display Design and Development Contract Society Address before: Tokyo, Japan Patentee before: JOLED Inc. |