CN102544064B - 使用氧化物半导体的器件、显示装置、和电子设备 - Google Patents
使用氧化物半导体的器件、显示装置、和电子设备 Download PDFInfo
- Publication number
- CN102544064B CN102544064B CN201110415692.2A CN201110415692A CN102544064B CN 102544064 B CN102544064 B CN 102544064B CN 201110415692 A CN201110415692 A CN 201110415692A CN 102544064 B CN102544064 B CN 102544064B
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- oxide semiconductor
- interconnection line
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- semiconductor layer
- transistor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 213
- 239000010410 layer Substances 0.000 claims abstract description 151
- 239000011229 interlayer Substances 0.000 claims abstract description 69
- 239000010409 thin film Substances 0.000 claims abstract description 43
- 239000011241 protective layer Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 26
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- 230000002093 peripheral effect Effects 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 101
- 239000010408 film Substances 0.000 claims description 88
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- 229920002120 photoresistant polymer Polymers 0.000 description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
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- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000003412 degenerative effect Effects 0.000 description 7
- 238000010276 construction Methods 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
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- 238000001259 photo etching Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
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- 238000002372 labelling Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
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- 238000012545 processing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 210000001367 artery Anatomy 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007600 charging Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 150000002927 oxygen compounds Chemical class 0.000 description 2
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- 238000005070 sampling Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000256844 Apis mellifera Species 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
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- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
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- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010276939A JP5707914B2 (ja) | 2010-12-13 | 2010-12-13 | 酸化物半導体を用いる装置、表示装置、及び、電子機器 |
JPJP2010-276939 | 2010-12-13 | ||
JP2010-276939 | 2010-12-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102544064A CN102544064A (zh) | 2012-07-04 |
CN102544064B true CN102544064B (zh) | 2016-08-17 |
Family
ID=46198432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110415692.2A Active CN102544064B (zh) | 2010-12-13 | 2011-12-13 | 使用氧化物半导体的器件、显示装置、和电子设备 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8476628B2 (zh) |
JP (1) | JP5707914B2 (zh) |
CN (1) | CN102544064B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011070901A1 (en) * | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9356049B2 (en) * | 2013-07-26 | 2016-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device with a transistor on an outer side of a bent portion |
EP4170718A3 (en) | 2021-09-03 | 2023-08-23 | LG Display Co., Ltd. | Display panel and electronic device including same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101740564A (zh) * | 2008-11-05 | 2010-06-16 | 索尼株式会社 | 薄膜晶体管衬底和显示装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0748563B2 (ja) * | 1988-08-01 | 1995-05-24 | シャープ株式会社 | 薄膜トランジスタ装置 |
NL194873C (nl) * | 1992-08-13 | 2003-05-06 | Oki Electric Ind Co Ltd | Dunnefilmtransistorenreeks en daarvan gebruikmakende vloeibare kristalweergeefinrichting. |
JP3231410B2 (ja) * | 1992-08-13 | 2001-11-19 | カシオ計算機株式会社 | 薄膜トランジスタアレイ及びその製造方法 |
JP2002110996A (ja) * | 2000-09-29 | 2002-04-12 | Sharp Corp | アクティブマトリクス基板および液晶表示装置 |
US6653159B2 (en) * | 2001-05-11 | 2003-11-25 | Au Optronics Corp. | Method of fabricating a thin film transistor liquid crystal display |
US7298084B2 (en) * | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
JP2007157916A (ja) * | 2005-12-02 | 2007-06-21 | Idemitsu Kosan Co Ltd | Tft基板及びtft基板の製造方法 |
JP2008103381A (ja) * | 2006-10-17 | 2008-05-01 | Epson Imaging Devices Corp | 半導体装置の製造方法、電気光学装置の製造方法、半導体装置、および電気光学装置 |
TWI424506B (zh) * | 2008-08-08 | 2014-01-21 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
KR101920196B1 (ko) * | 2008-09-19 | 2018-11-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
JP5552753B2 (ja) | 2008-10-08 | 2014-07-16 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
JP2010169754A (ja) * | 2009-01-20 | 2010-08-05 | Toshiba Corp | 画像表示装置 |
WO2011013523A1 (en) * | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2011052748A (ja) * | 2009-09-01 | 2011-03-17 | Chiyoda Seiki:Kk | バルブ開閉表示装置及びこれを備えた調整バルブ |
KR101248459B1 (ko) * | 2009-11-10 | 2013-03-28 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
JP5775712B2 (ja) * | 2010-10-28 | 2015-09-09 | 株式会社ジャパンディスプレイ | 表示装置 |
-
2010
- 2010-12-13 JP JP2010276939A patent/JP5707914B2/ja active Active
-
2011
- 2011-10-17 US US13/317,373 patent/US8476628B2/en active Active
- 2011-12-13 CN CN201110415692.2A patent/CN102544064B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101740564A (zh) * | 2008-11-05 | 2010-06-16 | 索尼株式会社 | 薄膜晶体管衬底和显示装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5707914B2 (ja) | 2015-04-30 |
US8476628B2 (en) | 2013-07-02 |
JP2012129240A (ja) | 2012-07-05 |
US20120146036A1 (en) | 2012-06-14 |
CN102544064A (zh) | 2012-07-04 |
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C06 | Publication | ||
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ASS | Succession or assignment of patent right |
Owner name: JANPAN ORGANIC RATE DISPLAY CO., LTD. Free format text: FORMER OWNER: SONY CORP Effective date: 20150714 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150714 Address after: Tokyo, Japan Applicant after: JOLED Inc. Address before: Tokyo, Japan Applicant before: Sony Corp. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231123 Address after: Tokyo, Japan Patentee after: Japan Display Design and Development Contract Society Address before: Tokyo, Japan Patentee before: JOLED Inc. |