CN101567373B - 双方向元件及其制造方法 - Google Patents
双方向元件及其制造方法 Download PDFInfo
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- CN101567373B CN101567373B CN2009101363073A CN200910136307A CN101567373B CN 101567373 B CN101567373 B CN 101567373B CN 2009101363073 A CN2009101363073 A CN 2009101363073A CN 200910136307 A CN200910136307 A CN 200910136307A CN 101567373 B CN101567373 B CN 101567373B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 54
- 239000004020 conductor Substances 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims description 170
- 238000000034 method Methods 0.000 claims description 49
- 239000010410 layer Substances 0.000 claims description 38
- 239000011229 interlayer Substances 0.000 claims description 36
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- 238000009413 insulation Methods 0.000 claims description 5
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 30
- 238000006073 displacement reaction Methods 0.000 description 28
- 229920005591 polysilicon Polymers 0.000 description 28
- 238000007600 charging Methods 0.000 description 15
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- 238000007599 discharging Methods 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/0031—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004038698 | 2004-02-16 | ||
JP2004-038698 | 2004-02-16 | ||
JP2004038698A JP4961658B2 (ja) | 2003-02-17 | 2004-02-16 | 双方向素子および半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100551886A Division CN100539184C (zh) | 2004-02-16 | 2004-08-12 | 双方向元件及其制造方法、半导体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101567373A CN101567373A (zh) | 2009-10-28 |
CN101567373B true CN101567373B (zh) | 2011-04-13 |
Family
ID=34824415
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101363073A Active CN101567373B (zh) | 2004-02-16 | 2004-08-12 | 双方向元件及其制造方法 |
CNB2004100551886A Active CN100539184C (zh) | 2004-02-16 | 2004-08-12 | 双方向元件及其制造方法、半导体装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100551886A Active CN100539184C (zh) | 2004-02-16 | 2004-08-12 | 双方向元件及其制造方法、半导体装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7902596B2 (zh) |
CN (2) | CN101567373B (zh) |
DE (1) | DE102004039402B4 (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005340626A (ja) * | 2004-05-28 | 2005-12-08 | Toshiba Corp | 半導体装置 |
JP5157164B2 (ja) * | 2006-05-29 | 2013-03-06 | 富士電機株式会社 | 半導体装置、バッテリー保護回路およびバッテリーパック |
JP5511124B2 (ja) * | 2006-09-28 | 2014-06-04 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
JP2008085188A (ja) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP2009206268A (ja) * | 2008-02-27 | 2009-09-10 | Seiko Instruments Inc | 半導体装置及びその製造方法 |
JP5337470B2 (ja) * | 2008-04-21 | 2013-11-06 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
US8476530B2 (en) * | 2009-06-22 | 2013-07-02 | International Business Machines Corporation | Self-aligned nano-scale device with parallel plate electrodes |
US8704328B2 (en) | 2011-06-24 | 2014-04-22 | Fuji Electric Co., Ltd. | High-voltage integrated circuit device |
JP5435138B2 (ja) * | 2011-06-24 | 2014-03-05 | 富士電機株式会社 | 高耐圧集積回路装置 |
JP2013069817A (ja) * | 2011-09-21 | 2013-04-18 | Toshiba Corp | 半導体装置 |
JP6017127B2 (ja) * | 2011-09-30 | 2016-10-26 | 株式会社東芝 | 炭化珪素半導体装置 |
US20130113038A1 (en) * | 2011-11-08 | 2013-05-09 | Feei Cherng Enterprise Co., Ltd. | Trench mosfet with split trenched gate structures in cell corners for gate charge reduction |
US9570447B2 (en) * | 2013-01-23 | 2017-02-14 | Longitude Semiconductor S.A.R.L. | Semiconductor device and production method therefor |
KR101960076B1 (ko) * | 2013-01-31 | 2019-03-20 | 삼성디스플레이 주식회사 | 표시 장치 |
US10068834B2 (en) * | 2013-03-04 | 2018-09-04 | Cree, Inc. | Floating bond pad for power semiconductor devices |
CN104348225B (zh) * | 2014-08-12 | 2017-07-11 | 矽力杰半导体技术(杭州)有限公司 | 一种单开关的电池充放电电路及电池充放电的控制方法 |
DE102014113465B4 (de) * | 2014-09-18 | 2022-01-13 | Infineon Technologies Austria Ag | Elektronisches Bauteil |
CN104701380B (zh) * | 2014-12-23 | 2017-05-03 | 电子科技大学 | 一种双向mos型器件及其制造方法 |
WO2016101134A1 (zh) * | 2014-12-23 | 2016-06-30 | 电子科技大学 | 一种双向mos型器件及其制造方法 |
JP6509621B2 (ja) | 2015-04-22 | 2019-05-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6088012B1 (ja) * | 2015-09-02 | 2017-03-01 | 日本写真印刷株式会社 | 能動素子、および能動素子の製造方法 |
JP6848317B2 (ja) * | 2016-10-05 | 2021-03-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2019054106A (ja) * | 2017-09-14 | 2019-04-04 | 株式会社東芝 | 半導体装置 |
JP2019067796A (ja) | 2017-09-28 | 2019-04-25 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10749218B2 (en) * | 2017-11-10 | 2020-08-18 | Qualcomm Incorporated | Circuitry for charging a multi-stack battery pack |
JP6856569B2 (ja) * | 2018-03-21 | 2021-04-07 | 株式会社東芝 | 半導体装置 |
CN109037337A (zh) * | 2018-06-28 | 2018-12-18 | 华为技术有限公司 | 一种功率半导体器件及制造方法 |
JP7376516B2 (ja) * | 2019-02-07 | 2023-11-08 | ローム株式会社 | 半導体装置 |
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US6097049A (en) * | 1998-03-18 | 2000-08-01 | Siemens Aktiengesellschaft | DRAM cell arrangement |
US20020175365A1 (en) * | 1996-08-22 | 2002-11-28 | Teruo Hirayama | Vertical field effect transistor and manufacturing method thereof |
CN1426598A (zh) * | 2000-03-31 | 2003-06-25 | 通用半导体公司 | 制造沟槽栅dmos晶体管的方法 |
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US4612465A (en) * | 1982-06-21 | 1986-09-16 | Eaton Corporation | Lateral bidirectional notch FET with gates at non-common potentials |
JPS6232649A (ja) | 1985-07-30 | 1987-02-12 | イ−トン コ−ポレ−シヨン | 双方向性電力fet |
JPS6231167A (ja) | 1985-07-30 | 1987-02-10 | イ−トン コ−ポレ−シヨン | バイポ−ラのオン状態を有する双方向性電力fet |
JPS6229173A (ja) | 1985-07-30 | 1987-02-07 | イ−トン コ−ポレ−シヨン | トラツプト・チヤ−ジ双方向性電力fet |
US4961100A (en) * | 1988-06-20 | 1990-10-02 | General Electric Company | Bidirectional field effect semiconductor device and circuit |
US5122848A (en) * | 1991-04-08 | 1992-06-16 | Micron Technology, Inc. | Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance |
JPH0832060A (ja) | 1994-07-13 | 1996-02-02 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP3395473B2 (ja) * | 1994-10-25 | 2003-04-14 | 富士電機株式会社 | 横型トレンチmisfetおよびその製造方法 |
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JP3222847B2 (ja) * | 1997-11-14 | 2001-10-29 | 松下電工株式会社 | 双方向形半導体装置 |
US6316807B1 (en) * | 1997-12-05 | 2001-11-13 | Naoto Fujishima | Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same |
GB9820904D0 (en) | 1998-09-26 | 1998-11-18 | Koninkl Philips Electronics Nv | Bi-directional semiconductor switch and switch circuit for battery-powered equipment |
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JP4797265B2 (ja) * | 2001-03-21 | 2011-10-19 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP4852792B2 (ja) * | 2001-03-30 | 2012-01-11 | 株式会社デンソー | 半導体装置の製造方法 |
DE10223822A1 (de) * | 2001-05-30 | 2002-12-05 | Fuji Electric Co Ltd | Halbleiterbauteil und Verfahren zu seiner Herstellung |
JP4764975B2 (ja) * | 2001-05-30 | 2011-09-07 | 富士電機株式会社 | 半導体装置 |
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US6919599B2 (en) * | 2002-06-28 | 2005-07-19 | International Rectifier Corporation | Short channel trench MOSFET with reduced gate charge |
-
2004
- 2004-08-12 CN CN2009101363073A patent/CN101567373B/zh active Active
- 2004-08-12 CN CNB2004100551886A patent/CN100539184C/zh active Active
- 2004-08-13 DE DE102004039402.4A patent/DE102004039402B4/de active Active
- 2004-08-16 US US10/918,705 patent/US7902596B2/en active Active
-
2009
- 2009-11-04 US US12/612,243 patent/US8084812B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020175365A1 (en) * | 1996-08-22 | 2002-11-28 | Teruo Hirayama | Vertical field effect transistor and manufacturing method thereof |
US6097049A (en) * | 1998-03-18 | 2000-08-01 | Siemens Aktiengesellschaft | DRAM cell arrangement |
CN1426598A (zh) * | 2000-03-31 | 2003-06-25 | 通用半导体公司 | 制造沟槽栅dmos晶体管的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101567373A (zh) | 2009-10-28 |
US20050179081A1 (en) | 2005-08-18 |
CN100539184C (zh) | 2009-09-09 |
US8084812B2 (en) | 2011-12-27 |
DE102004039402A1 (de) | 2005-09-01 |
DE102004039402B4 (de) | 2018-09-20 |
US20100044749A1 (en) | 2010-02-25 |
CN1658398A (zh) | 2005-08-24 |
US7902596B2 (en) | 2011-03-08 |
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