CN101494119A - 用有机金属化合物处理的电解电容器阳极 - Google Patents
用有机金属化合物处理的电解电容器阳极 Download PDFInfo
- Publication number
- CN101494119A CN101494119A CNA2008101860601A CN200810186060A CN101494119A CN 101494119 A CN101494119 A CN 101494119A CN A2008101860601 A CNA2008101860601 A CN A2008101860601A CN 200810186060 A CN200810186060 A CN 200810186060A CN 101494119 A CN101494119 A CN 101494119A
- Authority
- CN
- China
- Prior art keywords
- anode
- electrolytic capacitor
- electrolyte
- acid
- niobium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 56
- 150000002902 organometallic compounds Chemical class 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000010955 niobium Substances 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 18
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 15
- 125000004429 atom Chemical group 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 7
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- -1 alkoxy silane Chemical compound 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 23
- 239000003792 electrolyte Substances 0.000 claims description 23
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 20
- 238000007254 oxidation reaction Methods 0.000 claims description 20
- 241000446313 Lamella Species 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 17
- 239000002253 acid Substances 0.000 claims description 14
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229920001940 conductive polymer Polymers 0.000 claims description 7
- 239000002322 conducting polymer Substances 0.000 claims description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 239000006229 carbon black Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 239000008187 granular material Substances 0.000 claims 2
- 125000002947 alkylene group Chemical group 0.000 claims 1
- 238000005056 compaction Methods 0.000 claims 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 4
- 150000001768 cations Chemical class 0.000 abstract description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 24
- 239000004593 Epoxy Substances 0.000 description 16
- ZZHNUBIHHLQNHX-UHFFFAOYSA-N butoxysilane Chemical class CCCCO[SiH3] ZZHNUBIHHLQNHX-UHFFFAOYSA-N 0.000 description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 239000003054 catalyst Substances 0.000 description 9
- 150000002148 esters Chemical class 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000000178 monomer Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 150000002118 epoxides Chemical class 0.000 description 5
- 239000000314 lubricant Substances 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 239000007784 solid electrolyte Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 235000019198 oils Nutrition 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 241000790917 Dioxys <bee> Species 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 3
- 150000008040 ionic compounds Chemical class 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 239000012260 resinous material Substances 0.000 description 3
- 229930192474 thiophene Natural products 0.000 description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- QVQROLPFTKFLBU-UHFFFAOYSA-N 4-(oxiran-2-ylmethoxy)butyl-tripropoxysilane Chemical compound CCCO[Si](OCCC)(OCCC)CCCCOCC1CO1 QVQROLPFTKFLBU-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- KUCGHDUQOVVQED-UHFFFAOYSA-N ethyl(tripropoxy)silane Chemical compound CCCO[Si](CC)(OCCC)OCCC KUCGHDUQOVVQED-UHFFFAOYSA-N 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N glycerol Substances OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 2
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002685 polymerization catalyst Substances 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 2
- GSUGNQKJVLXBHC-UHFFFAOYSA-N triethoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCCOCC1CO1 GSUGNQKJVLXBHC-UHFFFAOYSA-N 0.000 description 2
- GUKYSRVOOIKHHB-UHFFFAOYSA-N trimethoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CCCCOCC1CO1 GUKYSRVOOIKHHB-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- CUXYLFPMQMFGPL-UHFFFAOYSA-N (9Z,11E,13E)-9,11,13-Octadecatrienoic acid Natural products CCCCC=CC=CC=CCCCCCCCC(O)=O CUXYLFPMQMFGPL-UHFFFAOYSA-N 0.000 description 1
- MEHUJCGAYMDLEL-CABCVRRESA-N (9r,10s)-9,10,16-trihydroxyhexadecanoic acid Chemical compound OCCCCCC[C@H](O)[C@H](O)CCCCCCCC(O)=O MEHUJCGAYMDLEL-CABCVRRESA-N 0.000 description 1
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- KILURZWTCGSYRE-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]alumanyloxypent-3-en-2-one Chemical compound CC(=O)\C=C(\C)O[Al](O\C(C)=C/C(C)=O)O\C(C)=C/C(C)=O KILURZWTCGSYRE-LNTINUHCSA-K 0.000 description 1
- JSYPRLVDJYQMAI-ODZAUARKSA-N (z)-but-2-enedioic acid;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)\C=C/C(O)=O JSYPRLVDJYQMAI-ODZAUARKSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- QLUOTIPAKQNTGM-UHFFFAOYSA-N 1-(oxiran-2-ylmethoxy)butyl-tripropoxysilane Chemical compound CCCO[Si](OCCC)(OCCC)C(CCC)OCC1CO1 QLUOTIPAKQNTGM-UHFFFAOYSA-N 0.000 description 1
- YDLRHJCZKKFTCD-UHFFFAOYSA-N 1-(oxiran-2-ylmethoxy)ethyl-tripropoxysilane Chemical compound CCCO[Si](OCCC)(OCCC)C(C)OCC1CO1 YDLRHJCZKKFTCD-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- IEKHISJGRIEHRE-UHFFFAOYSA-N 16-methylheptadecanoic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O IEKHISJGRIEHRE-UHFFFAOYSA-N 0.000 description 1
- SZFRZEBLZFTODC-UHFFFAOYSA-N 2,3,4-trimethylpent-2-ene Chemical group CC(C)C(C)=C(C)C SZFRZEBLZFTODC-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- WXHLLJAMBQLULT-UHFFFAOYSA-N 2-[[6-[4-(2-hydroxyethyl)piperazin-1-yl]-2-methylpyrimidin-4-yl]amino]-n-(2-methyl-6-sulfanylphenyl)-1,3-thiazole-5-carboxamide;hydrate Chemical compound O.C=1C(N2CCN(CCO)CC2)=NC(C)=NC=1NC(S1)=NC=C1C(=O)NC1=C(C)C=CC=C1S WXHLLJAMBQLULT-UHFFFAOYSA-N 0.000 description 1
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- MZWXWSVCNSPBLH-UHFFFAOYSA-N 3-(3-aminopropyl-methoxy-methylsilyl)oxypropan-1-amine Chemical compound NCCC[Si](C)(OC)OCCCN MZWXWSVCNSPBLH-UHFFFAOYSA-N 0.000 description 1
- WVMAJYXLIWGTHZ-UHFFFAOYSA-N 3-(oxiran-2-ylmethoxy)butyl-tripropoxysilane Chemical compound CCCO[Si](OCCC)(OCCC)CCC(C)OCC1CO1 WVMAJYXLIWGTHZ-UHFFFAOYSA-N 0.000 description 1
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 description 1
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 1
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 1
- WSASFFHWOQGSER-MUAIWGBPSA-N 82xgf31q2y Chemical compound C1[C@@]23[C@H](C(O)=O)CC[C@H]2[C@](C)(CO)[C@@H]1C(C(O)=O)=C[C@@H]3O WSASFFHWOQGSER-MUAIWGBPSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 241000212384 Bifora Species 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- ZAFMKDLMZPJNPR-UHFFFAOYSA-N CCO[Si](C)(OCC)OC(C)OCC1CO1 Chemical compound CCO[Si](C)(OCC)OC(C)OCC1CO1 ZAFMKDLMZPJNPR-UHFFFAOYSA-N 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 1
- 241000723346 Cinnamomum camphora Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- YZGQDNOIGFBYKF-UHFFFAOYSA-N Ethoxyacetic acid Natural products CCOCC(O)=O YZGQDNOIGFBYKF-UHFFFAOYSA-N 0.000 description 1
- MEHUJCGAYMDLEL-UHFFFAOYSA-N Ethyl-triacetylaleuritat Natural products OCCCCCCC(O)C(O)CCCCCCCC(O)=O MEHUJCGAYMDLEL-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 244000068988 Glycine max Species 0.000 description 1
- 235000010469 Glycine max Nutrition 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920001800 Shellac Polymers 0.000 description 1
- WSASFFHWOQGSER-UHFFFAOYSA-N Shellolic acid Natural products C1C23C(C(O)=O)CCC2C(C)(CO)C1C(C(O)=O)=CC3O WSASFFHWOQGSER-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- VVFMKHRTYGDEPI-UHFFFAOYSA-N [Ti]C1=CC=CC=C1 Chemical compound [Ti]C1=CC=CC=C1 VVFMKHRTYGDEPI-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000000783 alginic acid Substances 0.000 description 1
- 229920000615 alginic acid Polymers 0.000 description 1
- 235000010443 alginic acid Nutrition 0.000 description 1
- 229960001126 alginic acid Drugs 0.000 description 1
- 150000004781 alginic acids Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- CUXYLFPMQMFGPL-SUTYWZMXSA-N all-trans-octadeca-9,11,13-trienoic acid Chemical compound CCCC\C=C\C=C\C=C\CCCCCCCC(O)=O CUXYLFPMQMFGPL-SUTYWZMXSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229960004050 aminobenzoic acid Drugs 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 229940125717 barbiturate Drugs 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- MVIOINXPSFUJEN-UHFFFAOYSA-N benzenesulfonic acid;hydrate Chemical compound O.OS(=O)(=O)C1=CC=CC=C1 MVIOINXPSFUJEN-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229960004365 benzoic acid Drugs 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- UYANAUSDHIFLFQ-UHFFFAOYSA-N borinic acid Chemical compound OB UYANAUSDHIFLFQ-UHFFFAOYSA-N 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- XGZGKDQVCBHSGI-UHFFFAOYSA-N butyl(triethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)OCC XGZGKDQVCBHSGI-UHFFFAOYSA-N 0.000 description 1
- SXPLZNMUBFBFIA-UHFFFAOYSA-N butyl(trimethoxy)silane Chemical compound CCCC[Si](OC)(OC)OC SXPLZNMUBFBFIA-UHFFFAOYSA-N 0.000 description 1
- GNRBSDIBKIHSJH-UHFFFAOYSA-N butyl(tripropoxy)silane Chemical compound CCCC[Si](OCCC)(OCCC)OCCC GNRBSDIBKIHSJH-UHFFFAOYSA-N 0.000 description 1
- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 description 1
- 229960000846 camphor Drugs 0.000 description 1
- 229930008380 camphor Natural products 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- DYHSMQWCZLNWGO-UHFFFAOYSA-N di(propan-2-yloxy)alumane Chemical compound CC(C)O[AlH]OC(C)C DYHSMQWCZLNWGO-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- YCEQUKAYVABWTE-UHFFFAOYSA-N dichloro-methyl-prop-2-enylsilane Chemical compound C[Si](Cl)(Cl)CC=C YCEQUKAYVABWTE-UHFFFAOYSA-N 0.000 description 1
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- UGMCXQCYOVCMTB-UHFFFAOYSA-K dihydroxy(stearato)aluminium Chemical compound CCCCCCCCCCCCCCCCCC(=O)O[Al](O)O UGMCXQCYOVCMTB-UHFFFAOYSA-K 0.000 description 1
- PPHRDSXZGAXPOG-UHFFFAOYSA-N dihydroxyphosphanyl dioctyl phosphite Chemical compound CCCCCCCCOP(OCCCCCCCC)OP(O)O PPHRDSXZGAXPOG-UHFFFAOYSA-N 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- MBGQQKKTDDNCSG-UHFFFAOYSA-N ethenyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(C=C)OCC MBGQQKKTDDNCSG-UHFFFAOYSA-N 0.000 description 1
- ZLNAFSPCNATQPQ-UHFFFAOYSA-N ethenyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C=C ZLNAFSPCNATQPQ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 235000019197 fats Nutrition 0.000 description 1
- 150000002190 fatty acyls Chemical group 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 125000005456 glyceride group Chemical group 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 125000005908 glyceryl ester group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 229940070765 laurate Drugs 0.000 description 1
- 239000000944 linseed oil Substances 0.000 description 1
- 235000021388 linseed oil Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 1
- PZIYSFXXWHLPTD-UHFFFAOYSA-N methyl-[1-(oxiran-2-ylmethoxy)propoxy]-dipropoxysilane Chemical compound CCCO[Si](C)(OCCC)OC(CC)OCC1CO1 PZIYSFXXWHLPTD-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000004200 microcrystalline wax Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- YZMHQCWXYHARLS-UHFFFAOYSA-N naphthalene-1,2-disulfonic acid Chemical compound C1=CC=CC2=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC=C21 YZMHQCWXYHARLS-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ZYTNDGXGVOZJBT-UHFFFAOYSA-N niobium Chemical compound [Nb].[Nb].[Nb] ZYTNDGXGVOZJBT-UHFFFAOYSA-N 0.000 description 1
- MAKKVCWGJXNRMD-UHFFFAOYSA-N niobium(5+);oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] MAKKVCWGJXNRMD-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 239000004006 olive oil Substances 0.000 description 1
- 235000008390 olive oil Nutrition 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 125000002370 organoaluminium group Chemical group 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- YARNEMCKJLFQHG-UHFFFAOYSA-N prop-1-ene;styrene Chemical compound CC=C.C=CC1=CC=CC=C1 YARNEMCKJLFQHG-UHFFFAOYSA-N 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- FLALGSYYVIWTFQ-UHFFFAOYSA-K propan-2-olate;titanium(4+);trichloride Chemical class [Cl-].[Cl-].[Cl-].CC(C)O[Ti+3] FLALGSYYVIWTFQ-UHFFFAOYSA-K 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 238000007127 saponification reaction Methods 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004208 shellac Substances 0.000 description 1
- ZLGIYFNHBLSMPS-ATJNOEHPSA-N shellac Chemical compound OCCCCCC(O)C(O)CCCCCCCC(O)=O.C1C23[C@H](C(O)=O)CCC2[C@](C)(CO)[C@@H]1C(C(O)=O)=C[C@@H]3O ZLGIYFNHBLSMPS-ATJNOEHPSA-N 0.000 description 1
- 235000013874 shellac Nutrition 0.000 description 1
- 229940113147 shellac Drugs 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- DAJSVUQLFFJUSX-UHFFFAOYSA-M sodium;dodecane-1-sulfonate Chemical compound [Na+].CCCCCCCCCCCCS([O-])(=O)=O DAJSVUQLFFJUSX-UHFFFAOYSA-M 0.000 description 1
- 238000003797 solvolysis reaction Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229960005137 succinic acid Drugs 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000003115 supporting electrolyte Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- MYWQGROTKMBNKN-UHFFFAOYSA-N tributoxyalumane Chemical compound [Al+3].CCCC[O-].CCCC[O-].CCCC[O-] MYWQGROTKMBNKN-UHFFFAOYSA-N 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- OHKFEBYBHZXHMM-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)C(CCC)OCC1CO1 OHKFEBYBHZXHMM-UHFFFAOYSA-N 0.000 description 1
- SJQPASOTJGFOMU-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CCO[Si](OCC)(OCC)C(C)OCC1CO1 SJQPASOTJGFOMU-UHFFFAOYSA-N 0.000 description 1
- KPNCYSTUWLXFOE-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CCC(C)OCC1CO1 KPNCYSTUWLXFOE-UHFFFAOYSA-N 0.000 description 1
- LFBULLRGNLZJAF-UHFFFAOYSA-N trimethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CO[Si](OC)(OC)COCC1CO1 LFBULLRGNLZJAF-UHFFFAOYSA-N 0.000 description 1
- FFJVMNHOSKMOSA-UHFFFAOYSA-N trimethoxy-[1-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCCC([Si](OC)(OC)OC)OCC1CO1 FFJVMNHOSKMOSA-UHFFFAOYSA-N 0.000 description 1
- ZQPNGHDNBNMPON-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CCC(C)OCC1CO1 ZQPNGHDNBNMPON-UHFFFAOYSA-N 0.000 description 1
- OZWKZRFXJPGDFM-UHFFFAOYSA-N tripropoxysilane Chemical compound CCCO[SiH](OCCC)OCCC OZWKZRFXJPGDFM-UHFFFAOYSA-N 0.000 description 1
- 239000002383 tung oil Substances 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000012178 vegetable wax Substances 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/028—Organic semiconducting electrolytes, e.g. TCNQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Conductive Materials (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
提供一种用有机金属化合物处理的电解电容器阳极,该阳极被阳极氧化并其他的金属元素混合。具体地说,该金属元素被构建成电介质层的阀金属五氧化物。在一个特定的实施方案中,金属元素的加入结果形成了含有氧原子、Nb6八面体和为反阳离子的金属原子(″A″)的紧密堆积单元的五氧化二铌电介质。相对小的正电性金属原子(A″)的有助于填充该晶体的四面体(如Al、Si、Ti、Mg或Mn)、八面体(如Nb、V、Mg或Mn)以及三方双锥(如V、Nb)的空隙。电容器泄漏电流的稳定性可以通过晶体结构的变化而改善。
Description
背景技术
电解电容器通常是由可被氧化成电介质层的阀作用材料形成。典型的阀作用金属是铌和钽。近年来,电容器已经发展为使用由导电性铌氧化物和五氧化二铌电介质制成的阳极。氧化铌具有一种独特的结构,铌和氧原子的配位看上去是平面四边的。原子的排列是岩盐缺陷结构,其中所有在晶胞的中心以及顶点的原子被去除。由此已经表明该有序缺陷结构的形成加强了Nb-Nb键合以及通过Nb-Oπ-键合稳定了平面四边的氧原子。因此,化合物实际上是Nb6O12簇的聚集体。在适当的电压下通过阳极氧化,NbO被氧化为Nb2O5·nH2O。当加热时,五氧化二铌水合物缓慢地失水;然后,Nb2O5经历一系列结构变化并且失去一定量氧,形成缺氧的非化学计量的氧化铌。不幸的是,这样可能导致在加速温度和电压负荷下泄漏电流不稳定。
因此目前需要存在一种具有相应高容积效率的低泄漏电流的电解电容器。
发明内容
根据本发明的一个实施方案,公开了一种形成电容器阳极的方法,包括形成含有阀金属组合物的阳极主体以及在电解质存在的情况下阳极氧化阳极主体来形成电介质层。所述电解质包括约0.1wt%到约20wt%的有机金属化合物。根据本发明的另一个实施方案,公开了包括含有钽、铌、或它们的导电性氧化物的阳极主体的电解电容器;覆盖在阳极主体上面的电介质层;以及覆盖在电介质层上面的电解质片层。该电介质层包括含有硅的金属元素。
本发明的其它特征和方面将在下面进行更详细的阐述。
附图说明
对于本领域普通技术人员来说,本发明可行的和完全公开的内容,包括它的最佳方式,在说明书的其余部分更具体地进行了阐述,其中提到的附图:
图1是本发明电解电容器的一个实施方案的透视图;
图2是图1的电容器的剖视图;
图3是本发明激光焊接电容器到阳极终端的一个实施方案的示意图;
图4是根据本发明的一个实施方案形成的激光焊接的电容器的剖视图;
图5是实施例1中得到的V-A结果的图表描述;
图6是实施例2中得到的V-A结果的图表描述;
图7是实施例3中得到的V-A结果的图表描述;以及
图8是实施例4中得到的V-A结果的图表描述。
本发明说明书和图中图标的重复使用是用来表示本发明的相同的或类似的特征或要素。
具体实施方式
本领域普通技术人员可以明白现在的讨论仅仅是一种示范性的实施方案的叙述,但是并不意味着限制本发明更宽的范围,所述更宽的范围在示范的解释里得到体现。
一般而言,本发明涉及一种电解电容器,包括与另一种金属元素混合的被阳极氧化的阳极。更具体地说,所述金属元素被做成电介质层的阀金属五氧化物。在一个特定的实施方案中,金属元素的加入结果形成了含有O原子、Nb6八面体和作为反阳离子的金属原子(″A″)的紧密堆积单元的五氧化二铌电介质。相对小的正电性金属原子(A″)的使用帮助填充了该晶体的四面体(如Al、Si、Ti、Mg或Mn),八面体(如Nb、V、Mg或Mn)以及三方双锥(如V、Nb)的空隙。电容器泄漏电流的稳定性可以通过晶体结构的变化而改善。
为了在电介质层中引入金属元素,在阳极氧化时用有机金属化合物处理阳极。不打算被理论限制,人们普遍相信有机金属化合物可以经历溶剂分解(solvatolysis),此后金属元素被构建成电介质的结构。任何适当的有机金属化合物可以用于本发明。所述有机金属化合物一般包括具有至少一种键合到如硅、钛、铝、钒、铌、锰、镁等金属原子上的反应活性官能团的有机链。适当的有机金属化合物的例子可以包括,例如有机硅烷,如烷氧基硅烷(如乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、乙烯基甲基二甲氧基硅烷、乙烯基甲基二乙氧基硅烷、3-氨基丙基三甲氧基硅烷、3-氨基丙基三乙氧基硅烷、3-氨基丙基甲基二甲氧基硅烷、3-氨基丙基甲基二乙氧基硅烷、3-(2-氨基乙基)氨基丙基三甲氧基硅烷、3-巯基丙基三甲氧基硅烷、3-巯基丙基三乙氧基硅烷、3-巯基丙基甲基二甲氧基硅烷、3-巯基丙基甲基二乙氧基硅烷、环氧丙氧基甲基三甲氧基硅烷、环氧丙氧基甲基三乙氧基硅烷、环氧丙氧基甲基-三丙氧基硅烷、环氧丙氧基甲基三丁氧基硅烷、β-环氧丙氧基乙基三甲氧基硅烷、β-环氧丙氧基乙基三乙氧基硅烷、β-环氧丙氧基乙基-三丙氧基硅烷、β-环氧丙氧基乙基-三丁氧基硅烷、β-环氧丙氧基乙基三甲氧基硅烷、α-环氧丙氧基乙基三乙氧基硅烷、α-环氧丙氧基乙基三丙氧基硅烷、α-环氧丙氧基乙基三丁氧基硅烷、γ-环氧丙氧基丙基-三甲氧基硅烷、γ-环氧丙氧基丙基三乙氧基硅烷、γ-环氧丙氧基丙基-三丙氧基硅烷、γ-环氧丙氧基丙基三丁氧基硅烷、β-环氧丙氧基丙基三甲氧基硅烷、β-环氧丙氧基丙基-三乙氧基甲硅烷、β-环氧丙氧基丙基三丙氧基硅烷、α-环氧丙氧基丙基三丁氧基硅烷、α-环氧丙氧基丙基三甲氧基硅烷、α-环氧丙氧基丙基三乙氧基硅烷、α-环氧丙氧基丙基-三丙氧基硅烷、α-环氧丙氧基丙基三丁氧基硅烷、γ-环氧丙氧基丁基三甲氧基硅烷、δ-环氧丙氧基丁基三乙氧基硅烷、δ-环氧丙氧基丁基三丙氧基硅烷、δ-环氧丙氧基丁基-三丁氧基硅烷、δ-环氧丙氧基丁基三甲氧基硅烷、γ-环氧丙氧基丁基三乙氧基硅烷、γ-环氧丙氧基丁基三丙氧基硅烷、γ-丙氧基丁基三丁氧基硅烷、δ-环氧丙氧基丁基-三甲氧基硅烷、δ-环氧丙氧基丁基三乙氧基硅烷、δ-环氧丙氧基丁基三丙氧基硅烷、α-环氧丙氧基丁基三甲氧基硅烷、α-环氧丙氧基丁基三乙氧基硅烷、α-环氧丙氧基丁基-三丙氧基硅烷、α-环氧丙氧基丁基三丁氧基硅烷、(3,4-环氧基环己基)-甲基-三甲氧基硅烷、(3,4-环氧基环己基)甲基-三乙氧基硅烷、(3,4-环氧基环己基)甲基三丙氧基硅烷、(3,4-环氧基环己基)-甲基-三丁氧基硅烷、(3,4-环氧基环己基)乙基-三甲氧基硅烷、(3,4-环氧基环己基)乙基-三乙氧基硅烷、(3,4-环氧基环己基)乙基三丙氧基硅烷、(3,4-环氧基环己基)乙基三丁氧基硅烷、(3,4-环氧基环己基)丙基三甲氧基硅烷、(3,4-环氧基环己基)丙基三乙氧基硅烷、(3,4-环氧基环己基)丙基-三丙氧基硅烷、(3,4-环氧基环己基)丙基三丁氧基硅烷、(3,4-环氧基环己基)丁基三甲氧基硅烷、(3,4-环氧基环己基)丁基三乙氧基硅烷、(3,4-环氧基环己基)丁基三丙氧基硅烷、(3,4-环氧基环己基)丁基三丁氧基硅烷等)以及烷基硅烷(如乙烯基三氯硅烷、乙烯基甲基二氯硅烷等);有机钛酸酯,如双(环戊二烯基)钛双(三氟甲烷磺酸酯)、三异丙氧基氯化钛、二异丙氧基双(乙酰丙酮)钛、3-羟基-1,2-丙二醇二氯化钛、四(二乙基酰氨基)钛、双(2-羟基丙酸)二氢氧化二铵合钛、钛酸丁酯、钛酸异丙酯、三异硬脂酰基钛酸异丙酯、异丙基三(二辛基焦亚磷酸盐)钛酸酯、异丙基三(N-氨基乙基氨基乙基)钛酸酯、异丙基十三烷基苯磺酰基钛酸酯、四辛基双(二-十三烷基亚磷酸酯)钛酸酯、四(2,2-二芳氧基甲基-1-丁基)-双(二-十三烷基)亚磷酸酯钛酸酯、双(二辛基焦磷酸酯)氧基乙酸酯钛酸酯、双(二辛基焦磷酸酯)钛酸乙烯酯、异丙基三辛酰基钛酸酯、异丙基二甲基丙烯酰基异硬脂酰基钛酸酯、异丙基三枯基苯基钛酸酯等);有机铝,如乙酰丙酮铝、丁醇铝、异丙醇铝、单硬脂酸铝、缩醛烷氧基二异丙醇铝等。
所述阳极可以通过使用本领域已知的任何技术来形成。在一个实施方案中,例如,阳极是由阀金属组合物形成的。该阀金属组合物可以具有约25,000μF*V/g或更高的荷质比,在一些实施方案中为约40,000μF*V/g或更高,在一些实施方案中约60,000μF*V/g或更高,以及在一些实施方案中,从约80,000到约200,000mF*V/g或更高。阀金属组合物包括阀金属(即能够氧化的金属)或基于阀金属的化合物,如钽、铌、铝、铪、钛、它们的合金、它们的氧化物、它们的氮化物等。例如,该阀金属组合物可以包含铌的导电性氧化物,如铌与氧的原子比为1∶1.0±1.0的氧化铌,在一些实施方案中原子比为1∶1.0±0.3,在一些实施方案中原子比为1∶1.0±0.1,以及在一些实施方案中原子比为1∶1.0±0.05。例如,氧化铌可以是NbO0.7、NbO1.0、NbO1.1以及NbO2。在优选的实施方案中,组合物包括NbO1.0,它是一种甚至在高温下烧结之后可以保持化学稳定的氧化铌。此类阀金属氧化物的例子记载在Fife的美国专利6,322,912;Fife等人的美国专利6,391,275;Fife等人的美国专利6,416,730;Fife的美国专利6,527,937;Kimmel等人的美国专利6,576,099;Fife等人的美国专利6,592,740;以及Kimmel等人的美国专利6,639,787;以及Kimmel等人的美国专利7,220,397;Schnitter的美国专利申请2005/0019581;Schnitter等人的美国专利申请2005/0103638;Thomas等人的美国专利申请2005/0013765,此处引入的专利的全部内容都是用于作为参考目的。
该阀金属组合物可以是具有任何理想的形状或尺寸的颗粒形式。例如,颗粒可以是薄片、有角的、小节的,以及它们的混合物或变体。所述颗粒同时一般具有至少约60目的筛分粒度分布,在一些实施方案中为约60到约325目,以及在一些实施方案中为约100到约200目。此外,比表面积为约0.1到约10.0m2/g,在一些实施方案中为约0.5到约5.0m2/g,以及在一些实施方案中为约1.0到约2.0m2/g。术语″比表面积″是指按照Bruanauer、Emmet以及Teller,Journal of American Chemical Society,Vol.60,1938,p.309中记载的物理气体吸附(B.E.T.)方法,以氮气作为吸附气体来测定的表面面积。同样地,本体(或Scott)密度一般为约0.1到约5.0g/cm3,在一些实施方案中为约0.2到约2.5g/cm3,以及在一些实施方案中为约0.5到约1.5g/cm3。
为了促进阳极的形成,其它组分可以被加到导电性颗粒中。例如导电性颗粒可以任选与粘合剂和/或润滑剂混合来保证颗粒当受到冲压形成阳极主体时彼此充分粘附。合适的粘合剂可以包括樟脑、硬脂酸及其他皂化脂脂肪酸、聚乙二醇(Union Carbide)、甘酞树脂(通用电气公司)、聚乙烯醇、萘、植物蜡、以及微晶蜡(纯化的链烷烃)。该粘合剂可以是溶解的以及分散在溶剂中的。溶剂的例子可以包括水、醇等。当使用时,粘合剂和/或润滑剂的百分比可以是总质量的约0.1%到约8%。然而应该知道的是,粘合剂和润滑剂在本发明中不是必须的。
一旦形成,得到的粉末可以使用任何常规粉末压模来压紧。例如,所述压模可以是使用一个冲模以及一个或多个冲压机的单一位置压制压模。或者,也可以使用采用一个口模和单一下降冲压机的铁砧型压制压模。单一位置冲压模具有几种基本类型,如具有不同功能如单动、复动、浮动压模、移动模板、对置活塞、螺旋、冲击、热压、精压或施胶的凸轮、肘杆/肘节和偏心/曲轴式压机。该粉末可以在阳极线(如钽丝)周围被压缩。此外还应该知道,在阳极主体冲压和/或烧结之后,阳极线也可以被附着(如焊接)到阳极主体上。压缩之后,可以通过在真空以及特定温度(如约150℃到约500℃)下加热颗粒几分钟来除去任何粘合剂/润滑剂。或者,通过让颗粒与水溶液接触来去除粘合剂/润滑剂,如Bishop等人的美国专利6,197,252所述,其在此处被引入以作参考。其后,颗粒被烧结来形成多孔的整块。例如,在一个实施方案中,颗粒可以在真空下在约1200℃到约2000℃的温度,以及在一些实施方案中,从约1500℃到约1800℃被烧结。烧结时,由于颗粒之间的键合的增大,颗粒收缩。除了上述的技术外,根据本发明用于形成阳极主体的任何其它技术也可以被使用,如Galvagni的美国专利4,085,435;Sturmer等人的美国专利4,945,452;Galvagni的美国专利5,198,968;Salisbury的美国专利5,357,399;Galvagni等人的美国专利5,394,295;Kulkarni的美国专利5,495,386;以及Fife的美国专利6,322,912中的记载,它们此处引入以作参考。
尽管不是必需的,可以选择阳极的厚度来改善电容器的电性能。例如阳极的厚度可以为约4毫米或更少,在一些实施方案中,为约0.2到约3毫米,以及在一些实施方案中,为约0.4到约1毫米。也可以选择阳极的形状来改善得到的电容器的电性质。例如,阳极可以具有曲线的、正弦曲线的、矩形、U形的、V字形等等的形状。该阳极可以同时具有“凹槽”形状因为它包括一种或多种皱纹、凹槽、凹坑或凹穴以增加表面和容积之比以最小化电容的ESR和扩大电容的频率响应。该“凹槽”阳极记载在例如,Webber等人的美国专利6,191,936;Maeda等人的美国专利5,949,639;以及Bourgault等人的美国专利3,345,545,以及Hahn等人的美国专利申请2005/0270725,所有这些专利以其全部内容被引入以作参考。
一旦形成,阳极可以被阳极化以便于在阳极上和/或内部形成电介质层。阳极氧化是通过氧化阳极来形成一种具有相对较高介电常数的材料的电化学过程。例如,氧化铌(NbO)阳极可以被阳极氧化为五氧化二铌(Nb2O5)。通常,阳极氧化是通过起初在阳极上使用电解质来完成的,如将阳极浸渍到电解质中。该电解质通常是以液体形式存在,如溶液(如含水或无水的)、分散体、熔体等。溶剂通常被用于电解质中,如水(如去离子水);醚(如二***和四氢呋喃);醇(如甲醇、乙醇、正丙醇、异丙醇和丁醇);三甘油酯;酮(如丙酮、甲基乙基酮和甲基异丁基酮);酯(如乙酸乙酯、乙酸丁酯、二甘醇醚乙酸酯和甲氧基丙基乙酸酯);酰胺(如二甲基甲酰胺、二甲基乙酰胺、二甲基辛酸/癸酸的脂肪酸酰胺以及N-烃基吡咯烷酮);腈(如乙腈、丙腈、丁腈和苄腈);亚砜或砜类(如二甲基亚砜(DMSO)和环丁砜)等。溶剂可以占电解质的约50wt%到约99.9wt%,在一些实施方案中为约75wt%到约99wt%,以及在一些实施方案中为约80wt%到约95wt%。尽管不一定需要,常常通过使用水性溶剂(如水)来促进氧化物的形成。事实上,水可以占用于电解质中的溶剂的约1wt%或更高,在一些实施方案中约10wt%或更高,在一些实施方案中约50wt%或更高,在一些实施方案中约70wt%或更高,以及在一些实施方案中约90wt%到100wt%。
该电解质是导电性的,并且在25℃温度下测定,可以具有约1毫西门子每厘米(″mS/cm″)或更高的电导率,在一些实施方案中约30mS/cm或更高,以及在一些实施方案中约40mS/cm到约100mS/cm。为了增强该电解质的导电性,可以使用能够在溶剂离解来形成离子的化合物。用于该目的的合适的离子化合物可以包括,例如酸,如氢氯酸、硝酸、硫酸、磷酸、多聚磷酸、硼酸、烃基硼酸等;有机酸,包括羧酸类,如丙烯酸、甲基丙烯酸、丙二酸、琥珀酸、水杨酸、磺基水杨酸、己二酸、马来酸、苹果酸、油酸、五倍子酸、酒石酸、柠檬酸、甲酸、乙酸、乙醇酸、草酸、丙酸、邻苯二甲酸、间苯二酸、戊二酸、葡糖酸、乳酸、天冬氨酸、谷氨酸、衣康酸、三氟乙酸、巴比妥酸、肉桂酸、苯甲酸、4-羟基苯甲酸、氨基苯甲酸等;磺酸、如甲磺酸、苯磺酸、甲苯磺酸、三氟甲烷磺酸、苯乙烯磺酸、萘二磺酸、羟基苯磺酸、十二烷基磺酸、十二烷基苯磺酸等;聚合酸,如聚(丙烯酸)或聚(甲基丙烯酸)酸以及它们的共聚物(如马来酸-丙烯酸、磺酸-丙烯酸和苯乙烯-丙烯酸系共聚物)、角叉酸、羧甲基纤维素、海藻酸等。选择离子化合物的浓度来获得理想的电导率。例如,酸(如磷酸)可以占电解质的约0.01wt%到约5wt%,在一些实施方案中为约0.05wt%到约0.8wt%,以及在一些实施方案中为约0.1wt%到约0.5wt%。如果想要的话,可以在电解质中同时使用离子化合物的混合物。
一般而言,有机金属化合物也存在于电解质中以保证在阳极氧化时被引入电介质中。有机金属化合物一般以电解质的约0.1到约20wt%的量存在,在一些实施方案中为约0.5到约10wt%,以及在一些实施方案中为约1到约5wt%。当然,还应该知道也可以采用其它技术将有机金属化合物引入到电介质层中。例如,有机金属化合物可以与用于阳极的导电性颗粒简单混合,之后在电介质层形成前还原(reduce)。或者,有机金属化合物可以与随后反应生成导电性颗粒(如NbO)的起始原料(如Nb2O5)混合。不考虑所使用的特定技术,涂有有机金属化合物通常会产生在电介质层中存在量为约100百万分之一(″ppm″)或更高的金属元素(如硅、钛等等),在一些实施方案中约200ppm到约500,000ppm,在一些实施方案中约400ppm到约100,000ppm,以及在一些实施方案中从约600ppm到约50,000ppm。
电流通过电解质来形成电介质层。电压值决定着通过的电荷(电流乘以时间)以及由此电介质层的厚度。例如,电源可以最初在静电模式下建立,直到达到所需要的电压。其后,电源可以换到稳压器的模式以保证在阳极的表面形成想要的电介质厚度。当然,其它已知的方法也可以被使用,如脉冲法。电压一般为约4到约200V,以及在一些实施方案中为约9到约100V。在阳极氧化期间,电解质可以保持在高温下,如约30℃或更高,在一些实施方案中为约40℃到约200℃,以及在一些实施方案中为约50℃到约100℃。阳极氧化还可以在室温或更低温度下进行。得到的电介质层可以在阳极的表面上和/或它的孔隙内部合成。
一旦该电介质层形成,可以任选应用防护层,如由相对绝缘的树脂类材料(天然的或合成的)制备的。这种材料可以具有大于约0.05ohm-cm的电阻率,在一些实施方案中为大于约5,在一些实施方案中大于约1,000ohm-cm,在一些实施方案中大于约1×105ohm-cm,以及在一些实施方案中,大于约1×1010ohm-cm。在本发明中可以使用的一些树脂类材料包括,但不限于,聚氨酯类、聚苯乙烯、不饱和或饱和脂肪酸的酯(如甘油酯)等。例如,合适的脂肪酸的酯包括,但不限于,月桂酸、肉豆蔻酸、棕榈酸、硬脂酸、桐酸、油酸、亚油酸、亚麻酸、油桐酸、虫胶酸等的酯。已经发现这些脂肪酸的酯在用于相对复杂化合来形成“干性油”时是特别有用的,可以使得到的薄膜快速地聚合成为稳定层。这种干性油可能包括单-、二-、和/或三-甘油酯,它具有分别带有一个、两个、和三个酯化的脂肪酰基残基的丙三醇骨架。例如,一些可以使用的合适的干性油包括,但不限于,橄榄油、亚麻子油、蓖麻油、桐油、豆油、和虫胶。这些和其它防护层材料更详细的记载在Fife等人的美国专利6,674,635中,其在此处被全文引入以作参考。
阳极化部分随后根据传统方法经过一步骤来形成阴极。在一些实施方案中,例如阴极是通过多种技术来形成的,如硝酸锰(Mn(NO3)2)的热解来形成二氧化锰(MnO2)阴极。这种技术被记载在,例如Sturmer等人的美国专利4,945,452中,此处被全文引入以作参考。或者,导电聚合物涂层可以用来形成电容器的阴极。该导电聚合物涂层可以包括一种或多种聚杂环类(如聚吡咯;聚噻吩,聚(3,4-亚乙基二氧基噻吩)(PEDT);聚苯胺);聚乙炔;聚苯;聚酚盐;及其衍生物。此外,如果想要,该导电聚合物涂层也可以由多个导电聚合物片层形成。例如,在一个实施方案中,导电聚合物涂层可以包括由PEDT形成一个片层和由聚吡咯形成的另一片层。可以使用各种方法将导电聚合物涂覆到阳极部分上。例如,传统方法如电引发聚合、屏幕-打印、浸渍、电泳涂漆、以及喷涂,可以被用来形成导电聚合物涂层。在一个实施方案中,例如,用于形成导电聚合物的单体(如3,4-亚乙基二氧基噻吩)可以最初与聚合催化剂混合来形成溶液。例如,合适的聚合催化剂是BAYTRON C,它是铁III甲苯磺酸盐并且由H.C.Starck出售。对BAYTRON M,即3,4-亚乙基二氧基噻吩,一种也是H.C.Starck出售的PEDT单体来说,BAYTRON C是一种市场上可买到的用于BAYTRON M的催化剂。催化剂分散体一旦形成,阳极部分可以被浸入到分散体中以便在阳极部分的表面形成聚合物。或者,催化剂以及单体也可以独立应用到阳极部分。在一个实施方案中,例如催化剂可以溶于溶剂(如丁醇)中,然后被作为浸渍溶液应用到阳极部分。阳极部分可以随后干燥以除去溶剂。此后,阳极部分可以浸入到含有适当单体的溶液中。一旦单体与含有催化剂的阳极部分接触,它在上面进行化学聚合。另外,催化剂(如BAYTRONC)也可以与用于形成任选的防护层(如树脂类材料)的材料混合。在这种情况下,阳极部分可以随后被浸入到含有单体(BAYTRON M)的溶液中。因此,该单体可以与防护层内部和/或表面上的催化剂接触并且随即反应以形成导电聚合物涂层。尽管上面已经叙述了多种方法,还应该知道在本发明中还可以使用任何其它将导电涂层应用到阳极部分的方法。例如,应用导电聚合物涂层的其它方法可以记载在Sakata等人的美国专利5,457,862,Sakata等人的美国专利5,473,503,Sakata等人的美国专利5,729,428,以及Kudoh等人的美国专利5,812,367中,此处引入它们的全文以作参考。
在大多数的实施方案中,一旦应用,导电聚合物是修复的。修复可以在导电聚合物片层的每次形成之后出现,或者可以在整个导电聚合物涂层的形成之后出现。在一些实施方案中,例如,导电聚合物可以通过将颗粒浸渍到电解质溶液如磷酸和/或硫酸的溶液中来修复,以及此后将恒压应用到溶液中,直到电流降至预选的程度。如果想要,这种修复可以在多个步骤中完成。例如,在一个实施方案中,具有导电聚合物涂层的颗粒首先浸渍到磷酸中并且加压约20伏特,然后浸入硫酸中,以及加压约2伏特。在这个实施方案中,第二低压硫酸溶液或甲苯磺酸的使用可以有助于增加电容以及减少得到的电容器的损耗因子(DF)。在涂敷如上所述一部分或所有的片层之后,如果想要的话颗粒可以随后被冲洗以去除各种各样副产物,过量催化剂等。此外,在某些情况下,在一部分或所有的浸渍操作完成之后可以进行干燥。例如,在应用催化剂后和/或水洗颗粒后,为了让颗粒开孔以便它在浸渍步骤后可以接收液体,可以对其进行干燥。
一旦阴极形成,该部分可以任选分别涂敷炭黑片层(如石墨)和镀银层。该镀银层可以,例如作为一种用于电容器元件的可软焊导体、接触层、和/或电荷收集器,以及该碳涂层可以限制镀银层与固体电解质的接触。这种涂层可以覆盖一部分或所有的固体电解质。
可以使用现有技术来随后完成得到的电容器元件。参见图1-2,例如,电容器元件30的一个实施方案显示,它具有一般矩形形状和包括正面36,背面38,顶部和底部分别是37和39,以及侧面32(仅仅举例一个)。阳极线34从电容器元件30的正面36的纵向(″y″方向)伸出。图2进一步显示,电容器元件30包括阳极主体50,覆盖在阳极主体50上面的电介质层52,覆盖在电介质层52上面的固体电解质片层54,覆盖在有机固体电解质片层54上面的石墨片层56,以及覆盖在石墨片层56上面的镀银层58。当然,应当很清楚这种片层可以应用于电容器的任何表面,也并不必须以示例中的方式。
当电容器元件30形成时,阳极和阴极终端可以分别电连接到阳极线34和固体电解质片层54上(通过石墨和镀银层)。本领域中众所周知该终端的特定的构型可以变化。参见图3,例如,一个实施方案显示包括阳极终端70和阴极终端80。在这个特定的实施方案中,阴极终端包括第一部分82,其位置基本上垂直于第二部分84。第一部分82与该电容器元件30的底面39电接触以及第二部分84与该电容器元件30的后表面38电接触。为了将电容器元件30附加于阴极终端80上,可以使用本领域已知的导电粘合剂。导电粘合剂可以包括,例如含有导电性金属微粒的树脂组合物。该金属微粒可以是银、铜、金、铂、镍、锌、铋等。树脂组合物可以包括热固性树脂(如环氧树脂)、固化剂(如酸酐)、和偶联剂(如硅烷偶联剂)。合适的导电粘合剂记载在Osako等人的美国专利申请2006/0038304中,此处全文引入以作参考。
阳极终端70含有基本上垂直于第二部分74的第一部分76。第二部分74含有载有阳极线34的部位。在示例的实施方案中,部位51具有用于进一步增强线34的表面接触和机械稳定性的″U-形″。阳极线34随后用激光90焊在部位51上。一旦电容器元件附于终端后,它被封闭到树脂容器的内部,该容器可以随后被含硅树脂或任何其它已知的密封材料填充。该容器的宽度和长度可以根据计划的应用变化。然而,该容器的总厚度一般是小的以便所形成的组合件可容易引入到低剖面产品中(如“IC卡”)。例如,容器的厚度可以为约4.0毫米或更小,在一些实施方案中为约0.1到约2.5毫米,以及在一些实施方案中,为约0.15到约2.0毫米。合适的容器可以包括,例如″A″、″B″、″H″或″T″容器(AVX公司)。参见图4,例如一个用于电容器组合件100的密封容器的特定的实例是元件88。该密封的容器88为电容器组合件100提供附加的结构和热防护。封铸之后,相应阳极和阴极终端的曝光部分可以老化、遮蔽和修整。如果想要,该曝光部分可以沿着容器88的外面任选地弯曲两倍(如以大约90°角)。
根据本发明,形成的电容器可以显示出优良的电性质。例如,本发明的电容器一般具有低于约1000毫欧(mohms)的ESR,在一些实施方案中低于约500mohms,以及在一些实施方案中低于约100mohms。该电容器的等效串联电阻泛指像电阻器一样在电子电路中充电和放电的电容器,并且通常表示为与电容器串联的电阻。另外,得到的泄漏电流,泛指电流从一个导体通过绝缘体到相邻的导体,可以维持在相对低的水平上。例如,本发明的电容器的正态化泄漏电流的数值是,在一些实施方案中,低于约0.1μA/μF*V,在一些实施方案中低于约0.01μA/μF*V,以及在一些实施方案中为低于约0.001μA/mF*V,其中μA是微安以及uF*V是电容和额定电压的乘积。同样地,本发明的电容器的击穿电压可以至少是约10伏特,在一些实施方案中至少为约15伏特,在一些实施方案中至少为约20伏特,并且在一些实施方案中为约20伏特到约100伏特。
本发明可以通过参考下列实施例来更好地理解。
测试方法
VA特性
电容器的V-A特性是由100mOhms的串联电阻测量的。以0.1V的增量通过双极性电源(Keithley 2400)逐步增加外加电压以及电流是在延迟10s后25℃温度下通过数字式万用表(Agilent 34401)测量的。
实施例1
80,000μFV/g的氧化铌粉末(HC Starck)被压成颗粒并且烧结形成多孔电极主体。然后室温下在含有磷酸和变化浓度的N-2-(氨基乙基)3-氨基丙基甲基二甲氧基硅烷(0%、0.2%、1%和5%)的水溶液中进行阳极氧化。首先在恒电流下进行阳极氧化,达到理想的电压后恒电势进行阳极氧化。具有协助电解质的电解质的电导率是4.5mS/cm。选择电压来得到100μF的目标电容。阳极氧化后,颗粒涂上二氧化锰片层,石墨涂层和镀银层。通过常规组合技术来将制成的部件加工为B容器(EIA 3528)。然后测量电容器的V-A特性。结果如图5所示。
实施例2
除在22℃和60℃的温度下,在含有1%N-2-(氨基乙基)3-氨基丙基甲基二甲氧基硅烷的水溶液中进行阳极氧化不同于实施例1外,依实施例1形成阳极颗粒。V-A特性如图6所示。
实施例3
除在含水和乙醇溶剂以及1%N-2-(氨基乙基)3-氨基丙基甲基二甲氧基硅烷的溶液中进行阳极氧化不同于实施例1外,依实施例1形成阳极颗粒。V-A特性如图7所示。
实施例4
除在含有磷酸和1%的任一种四(三)烷氧基硅烷、四烷氧基钛酸酯或者三烷氧基铝酸酯在丁醇里的溶液中进行阳极氧化不同于实施例1外,依实施例1形成阳极颗粒。V-A特性如图8所示。
本发明的这些和其它改进以及变化可以在没有脱离本发明的精神和范围的前提下,通过本领域技术人员进行实践。另外,应当清楚的是各种实施方案的各方面可以完全或部分互换。此外,本领域技术人员知道上面的描述仅仅是作为示例的,其目的并不是限制本发明,本发明由权利要求书进行描述。
Claims (25)
1.一种用于形成电容器阳极的方法,该方法包括:
形成包括阀金属组合物的阳极主体;以及
在电解质存在下阳极氧化所述阳极主体以形成电介质层,其中所述电解质包括量为约0.1wt%到约20wt%的有机金属化合物。
2.根据权利要求1的方法,其中所述有机金属化合物含有至少一种键合到金属原子的反应活性官能团。
3.根据权利要求2的方法,其中所述金属原子为硅、钛、铝、钒、铌、锰、镁或它们的组合。
4.根据权利要求1的方法,其中所述有机金属化合物包含有机硅烷。
5.根据权利要求4的方法,其中所述有机硅烷是烷氧基硅烷。
6.根据权利要求5的方法,其中所述烷氧基硅烷是环氧烷氧基硅烷。
7.根据权利要求1的方法,其中所述有机金属化合物占电解质的约0.5到约10wt%。
8.根据权利要求1的方法,其中所述电解质还含有酸。
9.根据权利要求1的方法,其中所述阳极主体是通过压紧粉末形成压制颗粒以及烧结所述压制颗粒形成的。
10.根据权利要求1的方法,其中所述阳极主体被浸入电解质中。
11.根据权利要求1的方法,其中所述阀金属组合物含有钽、铌或它们的导电性氧化物。
12.根据权利要求1的方法,其中所述阀金属组合物含有铌原子与氧原子的原子比为1∶1.0±0.3的氧化铌。
13.根据权利要求1的方法,其中所述阀金属组合物含有铌原子与氧原子的原子比为1∶1.0±0.1的氧化铌。
14.根据权利要求1的方法形成的电容器阳极。
15.包含权利要求14所述的电容器阳极的电解电容器,还包括覆盖在电介质层上面的电解质片层。
16.一种电解电容器,包括:
含有钽、铌或它们的导电性氧化物的阳极主体;
覆盖在该阳极主体上面的电介质层,所述电介质层含有来自有机金属化合物的金属元素,所述金属元素包括硅;以及
覆盖在电介质层上面的电解质片层。
17.根据权利要求16的电解电容器,其中所述金属元素占电介质层的约100ppm或更高。
18.根据权利要求16的电解电容器,其中所述金属元素占电介质层的约200到约500,000ppm。
19.根据权利要求16的电解电容器,其中所述阳极主体含有铌原子与氧原子的原子比为1∶1.0±0.3的氧化铌。
20.根据权利要求16的电解电容器,其中所述阳极主体含有铌原子与氧原子的原子比为1∶1.0±0.1的氧化铌。
21.根据权利要求16的电解电容器,还至少包括覆盖在电解质片层上面的附加层,所述附加层包括炭黑片层、镀银层或它们的组合。
22.根据权利要求16的电解电容器,还包括从阳极主体伸出的阳极线。
23.根据权利要求22的电解电容器,还包括:
与电解质片层电连接的阴极终端;
与阳极主体电连接的阳极终端;以及
密封电容器并且使得至少一部分阳极和阴极终端暴露的容器。
24.根据权利要求16的电解电容器,其中所述电解质片层含有导电聚合物。
25.根据权利要求16的电解电容器,其中所述电解质片层含有二氧化锰。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/017,463 US7852615B2 (en) | 2008-01-22 | 2008-01-22 | Electrolytic capacitor anode treated with an organometallic compound |
US12/017,463 | 2008-01-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101494119A true CN101494119A (zh) | 2009-07-29 |
CN101494119B CN101494119B (zh) | 2012-09-26 |
Family
ID=40194763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101860601A Expired - Fee Related CN101494119B (zh) | 2008-01-22 | 2008-12-12 | 用有机金属化合物处理的电解电容器阳极 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7852615B2 (zh) |
JP (1) | JP5500830B2 (zh) |
KR (1) | KR20090080907A (zh) |
CN (1) | CN101494119B (zh) |
DE (1) | DE102008043236A1 (zh) |
GB (1) | GB2456858B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101819888A (zh) * | 2010-03-30 | 2010-09-01 | 福建国光电子科技股份有限公司 | 一种固体电解电容器的制备方法 |
CN101819887A (zh) * | 2010-03-30 | 2010-09-01 | 福建国光电子科技股份有限公司 | 用于制作固体电解电容器的表面处理溶液 |
CN102496486A (zh) * | 2010-06-23 | 2012-06-13 | Avx公司 | 包含改良的锰氧化物电解质的固态电解电容器 |
CN106663542A (zh) * | 2014-05-21 | 2017-05-10 | 凯米特电子公司 | 具有充电时间降低添加剂和功函数改良剂的电容器 |
CN112779581A (zh) * | 2019-11-08 | 2021-05-11 | 东莞市德施普技术有限公司 | 铝表面处理方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8213158B2 (en) * | 2007-09-28 | 2012-07-03 | Sanyo Electric Co., Ltd. | Solid electrolytic capacitor and its production method |
US20090279233A1 (en) * | 2008-05-12 | 2009-11-12 | Yuri Freeman | High volumetric efficiency anodes for electrolytic capacitors |
US20090301894A1 (en) * | 2008-06-09 | 2009-12-10 | Carsten Ehlers | Method of fabricating an integrated circuit |
US8619410B2 (en) | 2010-06-23 | 2013-12-31 | Avx Corporation | Solid electrolytic capacitor for use in high voltage applications |
CN102443833A (zh) * | 2011-12-04 | 2012-05-09 | 西北有色金属研究院 | 一种Nb2O5纳米多孔膜及其制备方法 |
US10204737B2 (en) | 2014-06-11 | 2019-02-12 | Avx Corporation | Low noise capacitors |
EP3895832B1 (en) | 2016-08-12 | 2022-12-28 | COMPOSITE MATERIALS TECHNOLOGY, Inc. | Electrolytic capacitor and method for improved electrolytic capacitor anodes |
KR20190077321A (ko) | 2016-09-01 | 2019-07-03 | 컴포짓 매터리얼스 테크놀로지, 아이엔씨. | LIB 애노드용 밸브 금속 기판상의 나노-스케일/나노 구조화된 Si 코팅 |
Family Cites Families (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB237181A (en) | 1925-02-21 | 1925-07-23 | Mary Louisa Gamble | Improvements applicable to corset busks |
US3345545A (en) * | 1964-11-27 | 1967-10-03 | Johnson Matthey & Mallory Ltd | Solid electrolytic capacitor having minimum anode impedance |
US3825802A (en) * | 1973-03-12 | 1974-07-23 | Western Electric Co | Solid capacitor |
US4085435A (en) * | 1976-06-14 | 1978-04-18 | Avx Corporation | Tantalum chip capacitor |
US4084965A (en) * | 1977-01-05 | 1978-04-18 | Fansteel Inc. | Columbium powder and method of making the same |
US4118727A (en) * | 1977-09-09 | 1978-10-03 | The United States Of America As Represented By The Secretary Of The Army | MOX multi-layer switching device comprising niobium oxide |
US4155017A (en) * | 1977-11-09 | 1979-05-15 | The United States Of America As Represented By The Secretary Of The Army | Sharpening high power pulses |
US4131520A (en) * | 1977-11-10 | 1978-12-26 | Sprague Electric Company | Two-stage anodization of capacitor electrodes |
US4149876A (en) * | 1978-06-06 | 1979-04-17 | Fansteel Inc. | Process for producing tantalum and columbium powder |
US4278513A (en) * | 1980-06-30 | 1981-07-14 | Sprague Electric Company | Two-stage differential anodization process |
CA1168762A (en) * | 1981-06-22 | 1984-06-05 | Osamu Michikami | Method of fabrication for josephson tunnel junction |
SU1057995A1 (ru) | 1981-12-05 | 1983-11-30 | Предприятие П/Я А-3529 | Способ изготовлени объемно-пористого анода электролитического конденсатора |
US4712857A (en) * | 1985-03-28 | 1987-12-15 | Honeywell Inc. | NO2 thin film electro-optic switch |
US4672267A (en) * | 1986-04-04 | 1987-06-09 | Gte Laboratories Incorporated | High intensity discharge device containing oxytrihalides |
JPS62268121A (ja) | 1986-05-16 | 1987-11-20 | 日立エーアイシー株式会社 | 電解コンデンサ用電解液 |
US4722756A (en) * | 1987-02-27 | 1988-02-02 | Cabot Corp | Method for deoxidizing tantalum material |
EP0287325B1 (en) * | 1987-04-13 | 1994-07-27 | Hitachi, Ltd. | Superconducting material and process for producing the same |
US4957541A (en) * | 1988-11-01 | 1990-09-18 | Nrc, Inc. | Capacitor grade tantalum powder |
US4945452A (en) * | 1989-11-30 | 1990-07-31 | Avx Corporation | Tantalum capacitor and method of making same |
EP0447165A3 (en) * | 1990-03-12 | 1992-08-05 | Matsushita Electric Industrial Co., Ltd | Solid electrolytic capacitors and method for manufacturing the same |
US5098485A (en) * | 1990-09-19 | 1992-03-24 | Evans Findings Company | Method of making electrically insulating metallic oxides electrically conductive |
US5198187A (en) * | 1991-11-20 | 1993-03-30 | University Of Florida | Methods for production of surface coated niobium reinforcements for intermetallic matrix composites |
US5198968A (en) * | 1992-07-23 | 1993-03-30 | Avx Corporation | Compact surface mount solid state capacitor and method of making same |
US5357399A (en) * | 1992-09-25 | 1994-10-18 | Avx Corporation | Mass production method for the manufacture of surface mount solid state capacitor and resulting capacitor |
JP3334192B2 (ja) | 1992-11-10 | 2002-10-15 | 三菱化学株式会社 | 電解コンデンサ用電解液 |
US5306479A (en) * | 1992-11-20 | 1994-04-26 | Teledyne Industries, Inc. (California Corp.) | Process for synthesizing niobium dioxide and mixed metal oxides containing niobium |
US5394295A (en) * | 1993-05-28 | 1995-02-28 | Avx Corporation | Manufacturing method for solid state capacitor and resulting capacitor |
US5391269A (en) * | 1993-06-29 | 1995-02-21 | At&T Corp. | Method of making an article comprising a silicon body |
JP2765462B2 (ja) * | 1993-07-27 | 1998-06-18 | 日本電気株式会社 | 固体電解コンデンサおよびその製造方法 |
US5495386A (en) * | 1993-08-03 | 1996-02-27 | Avx Corporation | Electrical components, such as capacitors, and methods for their manufacture |
JPH07135126A (ja) * | 1993-11-10 | 1995-05-23 | Nec Corp | 固体電解コンデンサ及びその製造方法 |
JP3068430B2 (ja) * | 1995-04-25 | 2000-07-24 | 富山日本電気株式会社 | 固体電解コンデンサ及びその製造方法 |
US5812367A (en) * | 1996-04-04 | 1998-09-22 | Matsushita Electric Industrial Co., Ltd. | Solid electrolytic capacitors comprising a conductive layer made of a polymer of pyrrole or its derivative |
US5993513A (en) | 1996-04-05 | 1999-11-30 | Cabot Corporation | Method for controlling the oxygen content in valve metal materials |
JPH09306792A (ja) | 1996-05-13 | 1997-11-28 | Matsushita Electric Ind Co Ltd | 固体電解コンデンサの製造方法 |
JP3863232B2 (ja) * | 1996-09-27 | 2006-12-27 | ローム株式会社 | 固体電解コンデンサに使用するコンデンサ素子の構造及びコンデンサ素子におけるチップ体の固め成形方法 |
US6165623A (en) * | 1996-11-07 | 2000-12-26 | Cabot Corporation | Niobium powders and niobium electrolytic capacitors |
GB9700566D0 (en) * | 1997-01-13 | 1997-03-05 | Avx Ltd | Binder removal |
JP3254163B2 (ja) * | 1997-02-28 | 2002-02-04 | 昭和電工株式会社 | コンデンサ |
US6051326A (en) * | 1997-04-26 | 2000-04-18 | Cabot Corporation | Valve metal compositions and method |
US6051044A (en) * | 1998-05-04 | 2000-04-18 | Cabot Corporation | Nitrided niobium powders and niobium electrolytic capacitors |
US6416730B1 (en) * | 1998-09-16 | 2002-07-09 | Cabot Corporation | Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides |
US6462934B2 (en) * | 1998-09-16 | 2002-10-08 | Cabot Corporation | Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides |
US6322912B1 (en) * | 1998-09-16 | 2001-11-27 | Cabot Corporation | Electrolytic capacitor anode of valve metal oxide |
US6391275B1 (en) * | 1998-09-16 | 2002-05-21 | Cabot Corporation | Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides |
US6072694A (en) * | 1998-09-30 | 2000-06-06 | Kemet Electronics Corporation | Electrolytic capacitor with improved leakage and dissipation factor |
BR0009107A (pt) * | 1999-03-19 | 2002-12-31 | Cabot Corp | Método para produzir pó de nióbio e outros pós metálicos através de moagem |
DE60035047T2 (de) | 1999-04-06 | 2008-01-31 | Showa Denko K.K. | Festelektrolytkondensator und herstellungsverfahren |
US6191936B1 (en) * | 1999-04-12 | 2001-02-20 | Vishay Sprague, Inc. | Capacitor having textured pellet and method for making same |
US6375704B1 (en) * | 1999-05-12 | 2002-04-23 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
US6483694B1 (en) * | 1999-06-22 | 2002-11-19 | Showa Denko Kabushiki Kaisha | Electrode for electrolytic capacitor, electrolytic capacitor, and manufacturing method therefor |
DE19953946A1 (de) * | 1999-11-09 | 2001-05-10 | Starck H C Gmbh Co Kg | Kondensatorpulver |
US6563695B1 (en) * | 1999-11-16 | 2003-05-13 | Cabot Supermetals K.K. | Powdered tantalum, niobium, production process thereof, and porous sintered body and solid electrolytic capacitor using the powdered tantalum or niobium |
US6576099B2 (en) * | 2000-03-23 | 2003-06-10 | Cabot Corporation | Oxygen reduced niobium oxides |
CN100339917C (zh) * | 2000-04-21 | 2007-09-26 | 昭和电工株式会社 | 铌烧结体及其生产方法以及使用这种铌烧结体的电容器 |
US6334945B1 (en) * | 2000-09-07 | 2002-01-01 | Kemet Electronics Corporation | Aging process for solid electrode capacitor |
JP2004513514A (ja) * | 2000-11-06 | 2004-04-30 | キャボット コーポレイション | 酸素を低減した改質バルブ金属酸化物 |
CA2438246A1 (en) * | 2001-02-12 | 2002-08-22 | H.C. Starck, Inc. | Tantalum-silicon and niobium-silicon substrates for capacitor anodes |
US6455443B1 (en) * | 2001-02-21 | 2002-09-24 | International Business Machines Corporation | Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density |
US7149074B2 (en) * | 2001-04-19 | 2006-12-12 | Cabot Corporation | Methods of making a niobium metal oxide |
EP1388870A4 (en) * | 2001-05-15 | 2006-07-26 | Showa Denko Kk | NIOB MONOXIDE POWDER, SINTERED PRODUCT OF NIOB-MONOXIDE AND CONDENSER WITH THE SINTERED PRODUCT OF NIOB-MONOXIDE |
US20030104923A1 (en) * | 2001-05-15 | 2003-06-05 | Showa Denko K.K. | Niobium oxide powder, niobium oxide sintered body and capacitor using the sintered body |
JP2002367867A (ja) * | 2001-06-06 | 2002-12-20 | Matsushita Electric Ind Co Ltd | 固体電解コンデンサ用電極部材とその製造方法及びこれを用いた固体電解コンデンサ |
US6674635B1 (en) * | 2001-06-11 | 2004-01-06 | Avx Corporation | Protective coating for electrolytic capacitors |
DE10307716B4 (de) * | 2002-03-12 | 2021-11-18 | Taniobis Gmbh | Ventilmetall-Pulver und Verfahren zu deren Herstellung |
AU2003265173A1 (en) * | 2002-08-30 | 2004-03-19 | Showa Denko K.K. | Metal foil for capacitor, solid electrolytic capacitor using the foil and production methods of the foil and the capacitor |
US7218505B2 (en) * | 2003-03-03 | 2007-05-15 | Showa Denko K.K. | Chip solid electrolyte capacitor |
US7157073B2 (en) * | 2003-05-02 | 2007-01-02 | Reading Alloys, Inc. | Production of high-purity niobium monoxide and capacitor production therefrom |
CN1549286A (zh) | 2003-05-08 | 2004-11-24 | 中南大学 | 一氧化铌电解电容器阳极及其制造方法 |
DE502004011120D1 (de) | 2003-07-15 | 2010-06-17 | Starck H C Gmbh | Niobsuboxidpulver |
DE10333156A1 (de) | 2003-07-22 | 2005-02-24 | H.C. Starck Gmbh | Verfahren zur Herstellung von Niobsuboxid |
DE10347702B4 (de) | 2003-10-14 | 2007-03-29 | H.C. Starck Gmbh | Sinterkörper auf Basis Niobsuboxid |
CN1879181B (zh) * | 2003-11-10 | 2012-11-14 | 昭和电工株式会社 | 用于电容器的铌粉、铌烧结体和电容器 |
TWI239542B (en) | 2003-12-26 | 2005-09-11 | Ind Tech Res Inst | Solid-state, electrolytic capacitor, fabrication method thereof, and coupling agent used therefor |
US7803235B2 (en) | 2004-01-08 | 2010-09-28 | Cabot Corporation | Passivation of tantalum and other metal powders using oxygen |
JP4275044B2 (ja) | 2004-02-04 | 2009-06-10 | 三洋電機株式会社 | 固体電解コンデンサおよびその製造方法 |
DE102004011214A1 (de) | 2004-03-04 | 2005-10-06 | W.C. Heraeus Gmbh | Hochtemperaturbeständiger Niob-Draht |
US20050218005A1 (en) | 2004-04-01 | 2005-10-06 | Yanming Liu | Anodizing electrolytes for high voltage capacitor anodes |
JP2005303062A (ja) | 2004-04-13 | 2005-10-27 | Rubycon Corp | 電解コンデンサ駆動用電解液及び電解コンデンサ |
US7116548B2 (en) * | 2004-04-23 | 2006-10-03 | Kemet Electronics Corporation | Fluted anode with minimal density gradients and capacitor comprising same |
CN1737072B (zh) * | 2004-08-18 | 2011-06-08 | 播磨化成株式会社 | 导电粘合剂及使用该导电粘合剂制造物件的方法 |
JP2006140443A (ja) * | 2004-10-15 | 2006-06-01 | Sanyo Electric Co Ltd | 固体電解コンデンサおよびその製造方法 |
CN100587869C (zh) * | 2004-10-15 | 2010-02-03 | 三洋电机株式会社 | 固体电解电容器及其制造方法 |
WO2006054795A1 (en) | 2004-11-19 | 2006-05-26 | Showa Denko K.K. | Solid electrolytic capacitor and method for producing the same |
WO2007020458A1 (en) | 2005-08-19 | 2007-02-22 | Avx Limited | Polymer based solid state capacitors and a method of manufacturing them |
GB0517952D0 (en) | 2005-09-02 | 2005-10-12 | Avx Ltd | Method of forming anode bodies for solid state capacitors |
US7466539B2 (en) * | 2005-09-30 | 2008-12-16 | Wisconsin Alumni Research Foundation | Electrochemical double-layer capacitor using organosilicon electrolytes |
JP4688710B2 (ja) * | 2006-03-28 | 2011-05-25 | 佐賀三洋工業株式会社 | 電解コンデンサの製造方法 |
WO2007123752A2 (en) * | 2006-03-31 | 2007-11-01 | Aculon, Inc. | Solid electrolytic capacitors |
US7754276B2 (en) * | 2007-04-16 | 2010-07-13 | Kemet Electronics Corporation | Process for manufacturing low ESR conductive polymer based solid electrolytic capacitors |
-
2008
- 2008-01-22 US US12/017,463 patent/US7852615B2/en active Active
- 2008-10-28 DE DE102008043236A patent/DE102008043236A1/de not_active Withdrawn
- 2008-11-17 GB GB0821008.0A patent/GB2456858B/en not_active Expired - Fee Related
- 2008-12-12 CN CN2008101860601A patent/CN101494119B/zh not_active Expired - Fee Related
-
2009
- 2009-01-16 JP JP2009007465A patent/JP5500830B2/ja not_active Expired - Fee Related
- 2009-01-21 KR KR1020090004979A patent/KR20090080907A/ko not_active Application Discontinuation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101819888A (zh) * | 2010-03-30 | 2010-09-01 | 福建国光电子科技股份有限公司 | 一种固体电解电容器的制备方法 |
CN101819887A (zh) * | 2010-03-30 | 2010-09-01 | 福建国光电子科技股份有限公司 | 用于制作固体电解电容器的表面处理溶液 |
CN102496486A (zh) * | 2010-06-23 | 2012-06-13 | Avx公司 | 包含改良的锰氧化物电解质的固态电解电容器 |
CN102496486B (zh) * | 2010-06-23 | 2016-06-01 | Avx公司 | 包含改良的锰氧化物电解质的固态电解电容器 |
CN106663542A (zh) * | 2014-05-21 | 2017-05-10 | 凯米特电子公司 | 具有充电时间降低添加剂和功函数改良剂的电容器 |
CN106663542B (zh) * | 2014-05-21 | 2019-01-08 | 凯米特电子公司 | 具有充电时间降低添加剂和功函数改良剂的电容器 |
CN112779581A (zh) * | 2019-11-08 | 2021-05-11 | 东莞市德施普技术有限公司 | 铝表面处理方法 |
CN112779581B (zh) * | 2019-11-08 | 2022-05-17 | 东莞市德施普技术有限公司 | 铝表面处理方法 |
Also Published As
Publication number | Publication date |
---|---|
GB0821008D0 (en) | 2008-12-24 |
GB2456858A (en) | 2009-07-29 |
US20090185329A1 (en) | 2009-07-23 |
JP2009177173A (ja) | 2009-08-06 |
DE102008043236A1 (de) | 2009-07-23 |
JP5500830B2 (ja) | 2014-05-21 |
GB2456858B (en) | 2012-02-29 |
KR20090080907A (ko) | 2009-07-27 |
CN101494119B (zh) | 2012-09-26 |
US7852615B2 (en) | 2010-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101494119B (zh) | 用有机金属化合物处理的电解电容器阳极 | |
CN101494118B (zh) | 用于电解电容器的经表面活性剂处理的烧结的阳极颗粒 | |
CN101814380B (zh) | 包含非金属表面处理的固体电解电容的阳极 | |
CN102592843B (zh) | 用于湿式电解电容器的平板式阳极 | |
JP5852778B2 (ja) | 固体電解コンデンサ用の外部コーティング | |
JP6190600B2 (ja) | 超高電圧固体電解コンデンサ | |
CN101419866B (zh) | 用于形成电容器阳极的掺杂陶瓷粉末 | |
CN101494121B (zh) | 用于电解电容器的经有机酸蚀刻的烧结阳极件 | |
US9514891B2 (en) | Thin wire/thick wire lead assembly for electrolytic capacitor | |
KR20100039233A (ko) | 굵은 응집체 및 미세한 응집체를 함유하는 분말로부터 형성된 커패시터 애노드 | |
CN102592829B (zh) | 用于湿式电解电容器的平板式阳极的引线结构 | |
CN105990026B (zh) | 钽嵌入式微芯片 | |
CN101673622B (zh) | 用于嵌入电路板的固体电解电容 | |
JP2012039123A (ja) | 機械的に堅牢な固体電解コンデンサアセンブリ | |
JP2021093545A (ja) | 固体電解キャパシタ用の低esr陽極リードテープ | |
GB2501574A (en) | A solid electrolytic capacitor comprising first and second anode lead wires | |
JP2012069789A (ja) | 固体電解コンデンサの製造方法および固体電解コンデンサ | |
WO2020106406A1 (en) | Solid electrolytic capacitor for a tantalum embedded microchip |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120926 Termination date: 20151212 |
|
EXPY | Termination of patent right or utility model |