JP5500830B2 - 有機金属化合物で処理された電解コンデンサアノード - Google Patents
有機金属化合物で処理された電解コンデンサアノード Download PDFInfo
- Publication number
- JP5500830B2 JP5500830B2 JP2009007465A JP2009007465A JP5500830B2 JP 5500830 B2 JP5500830 B2 JP 5500830B2 JP 2009007465 A JP2009007465 A JP 2009007465A JP 2009007465 A JP2009007465 A JP 2009007465A JP 5500830 B2 JP5500830 B2 JP 5500830B2
- Authority
- JP
- Japan
- Prior art keywords
- electrolyte
- niobium
- dielectric layer
- electrolytic capacitor
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000003990 capacitor Substances 0.000 title claims description 51
- 150000002902 organometallic compounds Chemical class 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 31
- 239000003792 electrolyte Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 30
- 239000010955 niobium Substances 0.000 claims description 21
- 229910052758 niobium Inorganic materials 0.000 claims description 18
- 229920001940 conductive polymer Polymers 0.000 claims description 16
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 16
- 239000008188 pellet Substances 0.000 claims description 16
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000007743 anodising Methods 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 125000000524 functional group Chemical group 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 150000001282 organosilanes Chemical class 0.000 claims 2
- 238000000748 compression moulding Methods 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- 238000002048 anodisation reaction Methods 0.000 description 12
- -1 3,4-epoxycyclohexyl Chemical group 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- 239000003054 catalyst Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000000178 monomer Substances 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000314 lubricant Substances 0.000 description 5
- 239000007784 solid electrolyte Substances 0.000 description 5
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 235000014113 dietary fatty acids Nutrition 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000000194 fatty acid Substances 0.000 description 4
- 229930195729 fatty acid Natural products 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 4
- 239000011253 protective coating Substances 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 230000035876 healing Effects 0.000 description 3
- 150000008040 ionic compounds Chemical class 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 235000019198 oils Nutrition 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 3
- 239000012260 resinous material Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- ZNXDCSVNCSSUNB-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CO[Si](OC)(OC)CCOCC1CO1 ZNXDCSVNCSSUNB-UHFFFAOYSA-N 0.000 description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- QVQROLPFTKFLBU-UHFFFAOYSA-N 4-(oxiran-2-ylmethoxy)butyl-tripropoxysilane Chemical compound CCCO[Si](OCCC)(OCCC)CCCCOCC1CO1 QVQROLPFTKFLBU-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
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- 150000007513 acids Chemical class 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
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- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 1
- ZWLBKGYXAYDBPG-UHFFFAOYSA-N tributoxy(3-propoxybutyl)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCC(C)OCCC ZWLBKGYXAYDBPG-UHFFFAOYSA-N 0.000 description 1
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- FQYWWLSIKWDAEC-UHFFFAOYSA-N tributoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCCOCC1CO1 FQYWWLSIKWDAEC-UHFFFAOYSA-N 0.000 description 1
- CBUYJESDGBAFOZ-UHFFFAOYSA-N tributoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCCCOCC1CO1 CBUYJESDGBAFOZ-UHFFFAOYSA-N 0.000 description 1
- UCSBCWBHZLSFGC-UHFFFAOYSA-N tributoxysilane Chemical compound CCCCO[SiH](OCCCC)OCCCC UCSBCWBHZLSFGC-UHFFFAOYSA-N 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- UNKMHLWJZHLPPM-UHFFFAOYSA-N triethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CCO[Si](OCC)(OCC)COCC1CO1 UNKMHLWJZHLPPM-UHFFFAOYSA-N 0.000 description 1
- OHKFEBYBHZXHMM-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)C(CCC)OCC1CO1 OHKFEBYBHZXHMM-UHFFFAOYSA-N 0.000 description 1
- SJQPASOTJGFOMU-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CCO[Si](OCC)(OCC)C(C)OCC1CO1 SJQPASOTJGFOMU-UHFFFAOYSA-N 0.000 description 1
- CFUDQABJYSJIQY-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CC(C)OCC1CO1 CFUDQABJYSJIQY-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- LFBULLRGNLZJAF-UHFFFAOYSA-N trimethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CO[Si](OC)(OC)COCC1CO1 LFBULLRGNLZJAF-UHFFFAOYSA-N 0.000 description 1
- HTVULPNMIHOVRU-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CC(C)OCC1CO1 HTVULPNMIHOVRU-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- GUKYSRVOOIKHHB-UHFFFAOYSA-N trimethoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CCCCOCC1CO1 GUKYSRVOOIKHHB-UHFFFAOYSA-N 0.000 description 1
- OZWKZRFXJPGDFM-UHFFFAOYSA-N tripropoxysilane Chemical compound CCCO[SiH](OCCC)OCCC OZWKZRFXJPGDFM-UHFFFAOYSA-N 0.000 description 1
- 239000002383 tung oil Substances 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/028—Organic semiconducting electrolytes, e.g. TCNQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
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- Conductive Materials (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
従って、現在、漏れ電流が低く、対応して体積効率が高い電解コンデンサに対する必要性が存在する。
本発明の他の特徴及び態様は、以下でより詳細に説明する。
当業者を対象とした本発明の完全かつ権限を付与する開示は、その最良の態様を含め、添付図面を参照する本明細書の残りの部分でより具体的に説明する。
本明細書及び図面における参照符号の反復使用は、本発明の同じか又は類似の特徴又は要素を表すことを意図している。
一般的に、本発明は、付加的な金属元素を取り込んだ陽極酸化アノードを収容する電解コンデンサに関する。より詳細には、金属元素は、誘電体層の弁金属五酸化物に組み込まれる。1つの特定的な実施形態では、この金属元素の添加は、酸素原子と、Nb6オクタヘドラルと、対カチオンとして機能する金属原子(A)との最密充填ユニットを含有する五酸化ニオブ誘電体を生じさせる。比較的小さい陽性金属原子(A’’)の使用は、結晶のテトラヘデラル(例えば、Al、Si、Ti、Mg、又はMn)、オクタヘドラル(例えば、Nb、V、Mg、又はMn)、及び双三角錐(例えば、V、Nb)間隙を満たすのに役立つ。コンデンサ漏れ電流の安定性は、この結晶構造の変化によって高めることができる。
本発明は、以下の実施例を参照することにより、更に良く理解することができる。
VA特性
コンデンサのVA特性は、100mohmの直列抵抗を用いて測定された。印加電圧は、0.1Vの増分でバイポーラ電源(Keithley 2400)によって段階的に高められ、電流は、デジタルマルチメータ(Agilent 34401)により、10秒遅延の後25℃の温度で測定された。
34 アノードワイヤ
38 後面
Claims (19)
- コンデンサアノードを形成する方法であって、
1:1.0±0.3のニオブ対酸素の原子比率を有するニオブの導電性酸化物を含む多孔質のアノード本体を形成する段階と、
0.1重量%から20重量%の量で含まれる有機金属化合物由来の金属元素及び酸を含有する電解質の存在下で前記多孔質のアノード本体を陽極酸化処理し、誘電体層を形成する段階であって、前記金属元素は前記誘電体層に取り込まれ、電解質層が前記誘電体層の上に直接重なる、前記段階と、
を含むことを特徴とする方法。 - 前記有機金属化合物は、金属原子に結合された少なくとも1つの反応性官能基を含有することを特徴とする請求項1に記載の方法。
- 前記金属原子は、珪素、チタン、アルミニウム、バナジウム、ニオブ、マンガン、マグネシウム、又はこれらの組合せであることを特徴とする請求項2に記載の方法。
- 前記有機金属化合物は、有機シランを含むことを特徴とする請求項1に記載の方法。
- 前記有機シランは、アルコキシシランであることを特徴とする請求項4に記載の方法。
- 前記アルコキシシランは、エポキシアルコキシシランであることを特徴とする請求項5に記載の方法。
- 前記有機金属化合物は、前記電解質の0.5から10重量%を構成することを特徴とする請求項1に記載の方法。
- 前記多孔質のアノード本体は、粉末を圧縮成形して圧縮ペレットを形成し、該圧縮ペレットを焼結させることによって形成されることを特徴とする請求項1に記載の方法。
- 前記多孔質のアノード本体は、前記電解質内に浸漬されることを特徴とする請求項1に記載の方法。
- 前記弁金属組成物は、1:1.0±0.1のニオブ対酸素の原子比率を有するニオブの酸化物を含有することを特徴とする請求項1に記載の方法。
- 1:1.0±0.3のニオブ対酸素の原子比率を有するニオブの導電性酸化物を含有する多孔質のアノード本体と、
前記多孔質のアノード本体の上に重なり、有機金属化合物由来の珪素を含む金属元素を含有する誘電体層であって、前記金属元素は前記誘電体層に取り込まれ、前記誘電体層は、任意の電解質の存在下で前記多孔質のアノード本体を陽極酸化処理することにより形成され、前記電解質は前記金属元素及び酸を含有する、前記誘電体層と、
前記誘電体層の上に直接重なる電解質層と、
を含むことを特徴とする電解コンデンサ。 - 前記金属元素は、前記誘電体層の100ppm又はそれよりも多くを構成することを特徴とする請求項11に記載の電解コンデンサ。
- 前記金属元素は、前記誘電体層の200から500、000ppmを構成することを特徴とする請求項11に記載の電解コンデンサ。
- 前記多孔質のアノード本体は、1:1.0±0.1のニオブ対酸素の原子比率を有するニオブの酸化物を含有することを特徴とする請求項11に記載の電解コンデンサ。
- 前記電解質層の上に重なり、カーボン層、銀層、又はこれらの組合せを含む少なくとも付加的な層を更に含むことを特徴とする請求項11に記載の電解コンデンサ。
- 前記多孔質のアノード本体から延びるアノードリードを更に含むことを特徴とする請求項11に記載の電解コンデンサ。
- 前記電解質層と電気的に連通するカソード端子と、
前記多孔質のアノード本体と電気的に連通するアノード端子と、
コンデンサを封入し、前記アノード及びカソード端子の少なくとも一部分を露出させておくケースと、
を更に含むことを特徴とする請求項16に記載の電解コンデンサ。 - 前記電解質層は、導電性ポリマーを含有することを特徴とする請求項11に記載の電解コンデンサ。
- 前記電解質層は、二酸化マンガンを含有することを特徴とする請求項11に記載の電解コンデンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/017,463 US7852615B2 (en) | 2008-01-22 | 2008-01-22 | Electrolytic capacitor anode treated with an organometallic compound |
US12/017,463 | 2008-01-22 |
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JP2009177173A JP2009177173A (ja) | 2009-08-06 |
JP5500830B2 true JP5500830B2 (ja) | 2014-05-21 |
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US (1) | US7852615B2 (ja) |
JP (1) | JP5500830B2 (ja) |
KR (1) | KR20090080907A (ja) |
CN (1) | CN101494119B (ja) |
DE (1) | DE102008043236A1 (ja) |
GB (1) | GB2456858B (ja) |
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US8213158B2 (en) * | 2007-09-28 | 2012-07-03 | Sanyo Electric Co., Ltd. | Solid electrolytic capacitor and its production method |
US20090279233A1 (en) * | 2008-05-12 | 2009-11-12 | Yuri Freeman | High volumetric efficiency anodes for electrolytic capacitors |
US20090301894A1 (en) * | 2008-06-09 | 2009-12-10 | Carsten Ehlers | Method of fabricating an integrated circuit |
CN101819887A (zh) * | 2010-03-30 | 2010-09-01 | 福建国光电子科技股份有限公司 | 用于制作固体电解电容器的表面处理溶液 |
CN101819888A (zh) * | 2010-03-30 | 2010-09-01 | 福建国光电子科技股份有限公司 | 一种固体电解电容器的制备方法 |
US8512422B2 (en) | 2010-06-23 | 2013-08-20 | Avx Corporation | Solid electrolytic capacitor containing an improved manganese oxide electrolyte |
US8619410B2 (en) | 2010-06-23 | 2013-12-31 | Avx Corporation | Solid electrolytic capacitor for use in high voltage applications |
CN102443833A (zh) * | 2011-12-04 | 2012-05-09 | 西北有色金属研究院 | 一种Nb2O5纳米多孔膜及其制备方法 |
WO2015179503A1 (en) * | 2014-05-21 | 2015-11-26 | Kemet Electronics Corporation | Capacitor with charge time reducing additives and work function modifiers |
US10204737B2 (en) | 2014-06-11 | 2019-02-12 | Avx Corporation | Low noise capacitors |
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-
2008
- 2008-01-22 US US12/017,463 patent/US7852615B2/en active Active
- 2008-10-28 DE DE102008043236A patent/DE102008043236A1/de not_active Withdrawn
- 2008-11-17 GB GB0821008.0A patent/GB2456858B/en not_active Expired - Fee Related
- 2008-12-12 CN CN2008101860601A patent/CN101494119B/zh not_active Expired - Fee Related
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2009
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CN101494119B (zh) | 2012-09-26 |
US7852615B2 (en) | 2010-12-14 |
US20090185329A1 (en) | 2009-07-23 |
JP2009177173A (ja) | 2009-08-06 |
GB2456858B (en) | 2012-02-29 |
DE102008043236A1 (de) | 2009-07-23 |
GB0821008D0 (en) | 2008-12-24 |
GB2456858A (en) | 2009-07-29 |
KR20090080907A (ko) | 2009-07-27 |
CN101494119A (zh) | 2009-07-29 |
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