CN100543939C - 半导体器件及其制造方法、以及薄膜器件 - Google Patents
半导体器件及其制造方法、以及薄膜器件 Download PDFInfo
- Publication number
- CN100543939C CN100543939C CNB2006101156277A CN200610115627A CN100543939C CN 100543939 C CN100543939 C CN 100543939C CN B2006101156277 A CNB2006101156277 A CN B2006101156277A CN 200610115627 A CN200610115627 A CN 200610115627A CN 100543939 C CN100543939 C CN 100543939C
- Authority
- CN
- China
- Prior art keywords
- film
- titanium nitride
- nitride film
- semiconductor device
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005236935 | 2005-08-17 | ||
JP2005236935 | 2005-08-17 | ||
JP2006209930 | 2006-08-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1917148A CN1917148A (zh) | 2007-02-21 |
CN100543939C true CN100543939C (zh) | 2009-09-23 |
Family
ID=37738101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101156277A Expired - Fee Related CN100543939C (zh) | 2005-08-17 | 2006-08-17 | 半导体器件及其制造方法、以及薄膜器件 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20070040198A1 (zh) |
CN (1) | CN100543939C (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4928098B2 (ja) * | 2005-08-03 | 2012-05-09 | セイコーエプソン株式会社 | 強誘電体キャパシタの製造方法 |
JP5010121B2 (ja) * | 2005-08-17 | 2012-08-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4600322B2 (ja) * | 2006-03-14 | 2010-12-15 | セイコーエプソン株式会社 | 強誘電体メモリ装置の製造方法 |
JP4164700B2 (ja) * | 2006-05-24 | 2008-10-15 | セイコーエプソン株式会社 | 強誘電体メモリおよびその製造方法 |
US9515075B1 (en) * | 2015-08-31 | 2016-12-06 | Cypress Semiconductor Corporation | Method for fabricating ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrier |
CN106446352A (zh) * | 2016-08-31 | 2017-02-22 | 郑州航空工业管理学院 | 金属化聚丙烯薄膜电容器多响应参数优化方法 |
KR102575405B1 (ko) * | 2016-12-06 | 2023-09-06 | 삼성전자주식회사 | 자기 저항 메모리 소자 및 그 제조 방법 |
JP2023047913A (ja) * | 2021-09-27 | 2023-04-06 | 富士フイルム株式会社 | 圧電積層体及び圧電素子 |
-
2006
- 2006-02-22 US US11/358,077 patent/US20070040198A1/en not_active Abandoned
- 2006-08-17 CN CNB2006101156277A patent/CN100543939C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20070040198A1 (en) | 2007-02-22 |
CN1917148A (zh) | 2007-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100543939C (zh) | 半导体器件及其制造方法、以及薄膜器件 | |
KR101025189B1 (ko) | 반도체 장치 및 그 제조 방법 | |
US7790476B2 (en) | Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor device | |
JP5668303B2 (ja) | 半導体装置及びその製造方法 | |
JP2008010634A (ja) | キャパシタを含む半導体装置及びその製造方法 | |
KR101184013B1 (ko) | 커패시터를 갖는 반도체 장치 및 그 제조 방법 | |
US7459361B2 (en) | Semiconductor device with ferroelectric capacitor and fabrication method thereof | |
US7803640B2 (en) | Semiconductor device and semiconductor product | |
JP2007088147A (ja) | 半導体装置およびその製造方法 | |
US20110183440A1 (en) | Semiconductor device and manufacturing method thereof, and thin film device | |
US7939347B2 (en) | Semiconductor device manufacturing method | |
US6583507B1 (en) | Barrier for capacitor over plug structures | |
CN100431155C (zh) | 半导体器件及其制造方法 | |
US7728370B2 (en) | Semiconductor device and manufacturing method of the same | |
US6908867B2 (en) | Method of manufacturing a FeRAM with annealing process | |
US7893472B2 (en) | Ferroelectric memory device, ferroelectric memory manufacturing method, and semiconductor manufacturing method | |
US6747302B2 (en) | FeRAM having BLT ferroelectric layer and method for forming the same | |
JP2000349249A (ja) | 半導体記憶装置の製造方法 | |
JP5277657B2 (ja) | 半導体装置及びその製造方法 | |
US20070158715A1 (en) | Ferroelectric capacitor and method for fabricating the same | |
JP5007723B2 (ja) | キャパシタを含む半導体装置及びその製造方法 | |
JP2006060107A (ja) | 半導体装置の製造方法 | |
JP2018046261A (ja) | 強誘電体メモリ装置の製造方法 | |
JP4225300B2 (ja) | 半導体装置 | |
JP2003197772A (ja) | キャパシタ、半導体記憶装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kawasaki, Kanagawa, Japan Applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090923 Termination date: 20130817 |