CA1047850A - System and process for deposition of polycrystalline silicon with silane in vacuum - Google Patents

System and process for deposition of polycrystalline silicon with silane in vacuum

Info

Publication number: CA1047850A
Authority: CA; Canada
Prior art keywords: wafers; silicon; tube; silane; flow
Prior art date: 1973-12-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA216,252A

Other languages

English (en)

French (fr)

Other versions

CA216252S (en

Inventor

Jerry L. Chruma

Paul G. Hilton

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Motorola Solutions Inc

Original Assignee

Motorola Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-12-19

Filing date

1974-12-19

Publication date

1979-02-06

1974-12-19 Application filed by Motorola Inc filed Critical Motorola Inc

1979-02-06 Application granted granted Critical

1979-02-06 Publication of CA1047850A publication Critical patent/CA1047850A/en

Status Expired legal-status Critical Current

Links

229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 50
238000000034 method Methods 0.000 title claims abstract description 42
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims abstract description 35
229910000077 silane Inorganic materials 0.000 title claims abstract description 31
230000008021 deposition Effects 0.000 title abstract description 45
235000012431 wafers Nutrition 0.000 claims abstract description 142
238000000151 deposition Methods 0.000 claims abstract description 63
239000010703 silicon Substances 0.000 claims abstract description 35
229910052710 silicon Inorganic materials 0.000 claims abstract description 34
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
239000000463 material Substances 0.000 claims abstract description 15
230000003287 optical effect Effects 0.000 claims abstract description 5
239000007789 gas Substances 0.000 claims description 31
239000000758 substrate Substances 0.000 claims description 18
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
235000012239 silicon dioxide Nutrition 0.000 claims description 13
239000002210 silicon-based material Substances 0.000 claims description 12
238000010438 heat treatment Methods 0.000 claims description 10
239000011261 inert gas Substances 0.000 claims description 7
230000008450 motivation Effects 0.000 claims description 5
239000000377 silicon dioxide Substances 0.000 claims description 3
229910003915 SiCl2H2 Inorganic materials 0.000 claims description 2
239000000919 ceramic Substances 0.000 claims description 2
229910052750 molybdenum Inorganic materials 0.000 claims description 2
239000011733 molybdenum Substances 0.000 claims description 2
229910052594 sapphire Inorganic materials 0.000 claims description 2
239000010980 sapphire Substances 0.000 claims description 2
229910052596 spinel Inorganic materials 0.000 claims description 2
239000011029 spinel Substances 0.000 claims description 2
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
229910052721 tungsten Inorganic materials 0.000 claims description 2
239000010937 tungsten Substances 0.000 claims description 2
238000011010 flushing procedure Methods 0.000 claims 2
230000006872 improvement Effects 0.000 claims 2
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
229910003910 SiCl4 Inorganic materials 0.000 claims 1
230000000694 effects Effects 0.000 claims 1
229910052732 germanium Inorganic materials 0.000 claims 1
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 1
PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 claims 1
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
239000006227 byproduct Substances 0.000 abstract 1
239000000428 dust Substances 0.000 abstract 1
239000008187 granular material Substances 0.000 abstract 1
229910052814 silicon oxide Inorganic materials 0.000 abstract 1
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
229960005419 nitrogen Drugs 0.000 description 11
239000010453 quartz Substances 0.000 description 10
229910052757 nitrogen Inorganic materials 0.000 description 9
238000004519 manufacturing process Methods 0.000 description 4
239000004065 semiconductor Substances 0.000 description 4
QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 3
238000002474 experimental method Methods 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
239000012159 carrier gas Substances 0.000 description 2
229910001873 dinitrogen Inorganic materials 0.000 description 2
230000006870 function Effects 0.000 description 2
VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
239000002178 crystalline material Substances 0.000 description 1
239000002360 explosive Substances 0.000 description 1
238000005755 formation reaction Methods 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
239000007788 liquid Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000009428 plumbing Methods 0.000 description 1
238000010926 purge Methods 0.000 description 1
239000003870 refractory metal Substances 0.000 description 1
239000005049 silicon tetrachloride Substances 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
230000002269 spontaneous effect Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Mechanical Engineering (AREA)
Materials Engineering (AREA)
Inorganic Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Silicon Compounds (AREA)

CA216,252A 1973-12-19 1974-12-19 System and process for deposition of polycrystalline silicon with silane in vacuum Expired CA1047850A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US426396A US3900597A (en)	1973-12-19	1973-12-19	System and process for deposition of polycrystalline silicon with silane in vacuum

Publications (1)

Publication Number	Publication Date
CA1047850A true CA1047850A (en)	1979-02-06

Family

ID=23690641

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA216,252A Expired CA1047850A (en)	1973-12-19	1974-12-19	System and process for deposition of polycrystalline silicon with silane in vacuum

Country Status (7)

Country	Link
US (1)	US3900597A (de)
JP (1)	JPS5095185A (de)
CA (1)	CA1047850A (de)
DE (1)	DE2460211B2 (de)
FR (1)	FR2255707B1 (de)
GB (1)	GB1470614A (de)
HK (1)	HK68380A (de)

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US4203387A (en) *	1978-12-28	1980-05-20	General Signal Corporation	Cage for low pressure silicon dioxide deposition reactors
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DE2907371C2 (de) *	1979-02-24	1981-03-12	Heraeus Quarzschmelze Gmbh, 6450 Hanau	Hochtemperaturfestes Schutzrohr für Wärmebehandlung von Halbleiterbauelementen
US4228004A (en) *	1979-04-12	1980-10-14	Thermco Products Corporation	Method and apparatus for removal of by-products of chemical vapor deposition from oil for vacuum pump
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US4401687A (en) *	1981-11-12	1983-08-30	Advanced Semiconductor Materials America	Plasma deposition of silicon
JPS58172217A (ja) *	1982-03-31	1983-10-11	Toshiba Corp	多結晶シリコン膜の形成方法
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US4556584A (en) *	1984-05-03	1985-12-03	Btu Engineering Corporation	Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates
FR2572312B1 (fr) *	1984-10-30	1989-01-20	Rhone Poulenc Spec Chim	Procede de fabrication de barreaux de silicium ultra-pur
US4744863A (en) *	1985-04-26	1988-05-17	Wisconsin Alumni Research Foundation	Sealed cavity semiconductor pressure transducers and method of producing the same
US4853669A (en) *	1985-04-26	1989-08-01	Wisconsin Alumni Research Foundation	Sealed cavity semiconductor pressure transducers and method of producing the same
US4597160A (en) *	1985-08-09	1986-07-01	Rca Corporation	Method of fabricating a polysilicon transistor with a high carrier mobility
GB2193976B (en) *	1986-03-19	1990-05-30	Gen Electric Plc	Process for depositing a polysilicon film on a substrate
US5298452A (en) *	1986-09-12	1994-03-29	International Business Machines Corporation	Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US5607511A (en) *	1992-02-21	1997-03-04	International Business Machines Corporation	Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US4897360A (en) *	1987-12-09	1990-01-30	Wisconsin Alumni Research Foundation	Polysilicon thin film process
US5024972A (en) *	1990-01-29	1991-06-18	Motorola, Inc.	Deposition of a conductive layer for contacts
US5181964A (en) *	1990-06-13	1993-01-26	International Business Machines Corporation	Single ended ultra-high vacuum chemical vapor deposition (uhv/cvd) reactor
US5112773A (en) *	1991-04-10	1992-05-12	Micron Technology, Inc.	Methods for texturizing polysilicon utilizing gas phase nucleation
US5614257A (en) *	1991-08-09	1997-03-25	Applied Materials, Inc	Low temperature, high pressure silicon deposition method
US5695819A (en) *	1991-08-09	1997-12-09	Applied Materials, Inc.	Method of enhancing step coverage of polysilicon deposits
JP3121131B2 (ja) *	1991-08-09	2000-12-25	アプライドマテリアルズインコーポレイテッド	低温高圧のシリコン蒸着方法
US5753559A (en) *	1996-01-16	1998-05-19	United Microelectronics Corporation	Method for growing hemispherical grain silicon
KR100652909B1 (ko) *	1998-03-06	2006-12-01	에이에스엠 아메리카, 인코포레이티드	하이 스텝 커버리지를 갖는 실리콘 증착 방법
US6479166B1 (en)	1998-10-06	2002-11-12	Case Western Reserve University	Large area polysilicon films with predetermined stress characteristics and method for producing same
US6268068B1 (en)	1998-10-06	2001-07-31	Case Western Reserve University	Low stress polysilicon film and method for producing same
US6666924B1 (en)	2000-03-28	2003-12-23	Asm America	Reaction chamber with decreased wall deposition
US6564810B1 (en)	2000-03-28	2003-05-20	Asm America	Cleaning of semiconductor processing chambers
EP1421607A2 (de)	2001-02-12	2004-05-26	ASM America, Inc.	Verbesserter prozess zur ablagerung von halbleiterfilmen
US7026219B2 (en)	2001-02-12	2006-04-11	Asm America, Inc.	Integration of high k gate dielectric
US6957741B2 (en) *	2001-08-07	2005-10-25	Manfred Franz Axel Freissle	Screening arrangement
JP5005170B2 (ja) *	2002-07-19	2012-08-22	エーエスエムアメリカインコーポレイテッド	超高品質シリコン含有化合物層の形成方法
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US9443730B2 (en)	2014-07-18	2016-09-13	Asm Ip Holding B.V.	Process for forming silicon-filled openings with a reduced occurrence of voids
US9837271B2 (en)	2014-07-18	2017-12-05	Asm Ip Holding B.V.	Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en)	2017-03-31	2019-10-29	Asm Ip Holding B.V.	Semiconductor device with amorphous silicon filled gaps and methods for forming
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1973
- 1973-12-19 US US426396A patent/US3900597A/en not_active Expired - Lifetime
1974
- 1974-12-17 GB GB5447774A patent/GB1470614A/en not_active Expired
- 1974-12-18 JP JP49145507A patent/JPS5095185A/ja active Pending
- 1974-12-19 CA CA216,252A patent/CA1047850A/en not_active Expired
- 1974-12-19 DE DE2460211A patent/DE2460211B2/de not_active Ceased
1975
- 1975-01-09 FR FR7500576A patent/FR2255707B1/fr not_active Expired
1980
- 1980-12-04 HK HK683/80A patent/HK68380A/xx unknown

Also Published As

Publication number	Publication date
US3900597A (en)	1975-08-19
DE2460211A1 (de)	1975-11-06
DE2460211B2 (de)	1979-05-23
GB1470614A (en)	1977-04-14
JPS5095185A (de)	1975-07-29
FR2255707A1 (de)	1975-07-18
FR2255707B1 (de)	1978-06-23
HK68380A (en)	1980-12-12

Publication	Publication Date	Title
CA1047850A (en)	1979-02-06	System and process for deposition of polycrystalline silicon with silane in vacuum
KR100307256B1 (ko)	2001-11-30	균일성이개선된폴리실리콘막을증착하는방법및장치
US5938850A (en)	1999-08-17	Single wafer heat treatment apparatus
US20030205324A1 (en)	2003-11-06	Wafer holder with stiffening rib
JP3184000B2 (ja)	2001-07-09	薄膜の形成方法およびその装置
US6797068B1 (en)	2004-09-28	Film forming unit
KR19980063727A (ko)	1998-10-07	가스 기판 지지 방법
US5390626A (en)	1995-02-21	Process for formation of silicon carbide film
SE8200235L (sv)	1982-01-18	Forfarande och apparat for kemisk angavsettning av filmer pa kiselskivor
US4699825A (en)	1987-10-13	Method of forming silicon nitride film and product
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