CA1047850A - System and process for deposition of polycrystalline silicon with silane in vacuum - Google Patents
System and process for deposition of polycrystalline silicon with silane in vacuumInfo
- Publication number
- CA1047850A CA1047850A CA216,252A CA216252A CA1047850A CA 1047850 A CA1047850 A CA 1047850A CA 216252 A CA216252 A CA 216252A CA 1047850 A CA1047850 A CA 1047850A
- Authority
- CA
- Canada
- Prior art keywords
- wafers
- silicon
- tube
- silane
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 42
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910000077 silane Inorganic materials 0.000 title claims abstract description 31
- 230000008021 deposition Effects 0.000 title abstract description 45
- 235000012431 wafers Nutrition 0.000 claims abstract description 142
- 238000000151 deposition Methods 0.000 claims abstract description 63
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000002210 silicon-based material Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 7
- 230000008450 motivation Effects 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910003915 SiCl2H2 Inorganic materials 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052596 spinel Inorganic materials 0.000 claims description 2
- 239000011029 spinel Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000011010 flushing procedure Methods 0.000 claims 2
- 230000006872 improvement Effects 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910003910 SiCl4 Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 1
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- 239000006227 byproduct Substances 0.000 abstract 1
- 239000000428 dust Substances 0.000 abstract 1
- 239000008187 granular material Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 229960005419 nitrogen Drugs 0.000 description 11
- 239000010453 quartz Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009428 plumbing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US426396A US3900597A (en) | 1973-12-19 | 1973-12-19 | System and process for deposition of polycrystalline silicon with silane in vacuum |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1047850A true CA1047850A (en) | 1979-02-06 |
Family
ID=23690641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA216,252A Expired CA1047850A (en) | 1973-12-19 | 1974-12-19 | System and process for deposition of polycrystalline silicon with silane in vacuum |
Country Status (7)
Country | Link |
---|---|
US (1) | US3900597A (de) |
JP (1) | JPS5095185A (de) |
CA (1) | CA1047850A (de) |
DE (1) | DE2460211B2 (de) |
FR (1) | FR2255707B1 (de) |
GB (1) | GB1470614A (de) |
HK (1) | HK68380A (de) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2539434A1 (de) * | 1975-09-04 | 1977-03-17 | Siemens Ag | Vorrichtung zur rundumbeschichtung metallischer kleinteile |
GB1518564A (en) * | 1975-11-25 | 1978-07-19 | Motorola Inc | Method for the low pressure pyrolytic deposition of silicon nitride |
US4027053A (en) * | 1975-12-19 | 1977-05-31 | Motorola, Inc. | Method of producing polycrystalline silicon ribbon |
US4053335A (en) * | 1976-04-02 | 1977-10-11 | International Business Machines Corporation | Method of gettering using backside polycrystalline silicon |
US4098923A (en) * | 1976-06-07 | 1978-07-04 | Motorola, Inc. | Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat |
US4062318A (en) * | 1976-11-19 | 1977-12-13 | Rca Corporation | Apparatus for chemical vapor deposition |
JPS5423386A (en) * | 1977-07-22 | 1979-02-21 | Hitachi Ltd | Manufacture of semiconductor device |
JPS584811B2 (ja) * | 1978-10-31 | 1983-01-27 | 富士通株式会社 | 半導体装置の製造方法 |
US4203387A (en) * | 1978-12-28 | 1980-05-20 | General Signal Corporation | Cage for low pressure silicon dioxide deposition reactors |
JPS55110032A (en) * | 1979-02-19 | 1980-08-25 | Fujitsu Ltd | Method for high-frequency heated epitaxial growth |
DE2907371C2 (de) * | 1979-02-24 | 1981-03-12 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Hochtemperaturfestes Schutzrohr für Wärmebehandlung von Halbleiterbauelementen |
US4228004A (en) * | 1979-04-12 | 1980-10-14 | Thermco Products Corporation | Method and apparatus for removal of by-products of chemical vapor deposition from oil for vacuum pump |
JPS55158623A (en) * | 1979-05-29 | 1980-12-10 | Hitachi Ltd | Method of controlling semiconductor vapor phase growth |
GB2049643B (en) * | 1979-05-30 | 1983-07-20 | Siemens Ag | Process for the production of silicon having semiconducting proprties |
US4263336A (en) * | 1979-11-23 | 1981-04-21 | Motorola, Inc. | Reduced pressure induction heated reactor and method |
US4315968A (en) * | 1980-02-06 | 1982-02-16 | Avco Corporation | Silicon coated silicon carbide filaments and method |
US4444812A (en) * | 1980-07-28 | 1984-04-24 | Monsanto Company | Combination gas curtains for continuous chemical vapor deposition production of silicon bodies |
DD206687A3 (de) * | 1981-07-28 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur gasfuehrung fuer lp cvd prozesse in einem rohrreaktor |
US4401687A (en) * | 1981-11-12 | 1983-08-30 | Advanced Semiconductor Materials America | Plasma deposition of silicon |
JPS58172217A (ja) * | 1982-03-31 | 1983-10-11 | Toshiba Corp | 多結晶シリコン膜の形成方法 |
US4547404A (en) * | 1982-08-27 | 1985-10-15 | Anicon, Inc. | Chemical vapor deposition process |
US4489103A (en) * | 1983-09-16 | 1984-12-18 | Rca Corporation | SIPOS Deposition method |
JPS60200523A (ja) * | 1984-03-26 | 1985-10-11 | Agency Of Ind Science & Technol | シリコン薄膜の製造法 |
US4556584A (en) * | 1984-05-03 | 1985-12-03 | Btu Engineering Corporation | Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates |
FR2572312B1 (fr) * | 1984-10-30 | 1989-01-20 | Rhone Poulenc Spec Chim | Procede de fabrication de barreaux de silicium ultra-pur |
US4744863A (en) * | 1985-04-26 | 1988-05-17 | Wisconsin Alumni Research Foundation | Sealed cavity semiconductor pressure transducers and method of producing the same |
US4853669A (en) * | 1985-04-26 | 1989-08-01 | Wisconsin Alumni Research Foundation | Sealed cavity semiconductor pressure transducers and method of producing the same |
US4597160A (en) * | 1985-08-09 | 1986-07-01 | Rca Corporation | Method of fabricating a polysilicon transistor with a high carrier mobility |
GB2193976B (en) * | 1986-03-19 | 1990-05-30 | Gen Electric Plc | Process for depositing a polysilicon film on a substrate |
US5298452A (en) * | 1986-09-12 | 1994-03-29 | International Business Machines Corporation | Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
US5607511A (en) * | 1992-02-21 | 1997-03-04 | International Business Machines Corporation | Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
US4897360A (en) * | 1987-12-09 | 1990-01-30 | Wisconsin Alumni Research Foundation | Polysilicon thin film process |
US5024972A (en) * | 1990-01-29 | 1991-06-18 | Motorola, Inc. | Deposition of a conductive layer for contacts |
US5181964A (en) * | 1990-06-13 | 1993-01-26 | International Business Machines Corporation | Single ended ultra-high vacuum chemical vapor deposition (uhv/cvd) reactor |
US5112773A (en) * | 1991-04-10 | 1992-05-12 | Micron Technology, Inc. | Methods for texturizing polysilicon utilizing gas phase nucleation |
US5614257A (en) * | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
US5695819A (en) * | 1991-08-09 | 1997-12-09 | Applied Materials, Inc. | Method of enhancing step coverage of polysilicon deposits |
JP3121131B2 (ja) * | 1991-08-09 | 2000-12-25 | アプライド マテリアルズ インコーポレイテッド | 低温高圧のシリコン蒸着方法 |
US5753559A (en) * | 1996-01-16 | 1998-05-19 | United Microelectronics Corporation | Method for growing hemispherical grain silicon |
KR100652909B1 (ko) * | 1998-03-06 | 2006-12-01 | 에이에스엠 아메리카, 인코포레이티드 | 하이 스텝 커버리지를 갖는 실리콘 증착 방법 |
US6479166B1 (en) | 1998-10-06 | 2002-11-12 | Case Western Reserve University | Large area polysilicon films with predetermined stress characteristics and method for producing same |
US6268068B1 (en) | 1998-10-06 | 2001-07-31 | Case Western Reserve University | Low stress polysilicon film and method for producing same |
US6666924B1 (en) | 2000-03-28 | 2003-12-23 | Asm America | Reaction chamber with decreased wall deposition |
US6564810B1 (en) | 2000-03-28 | 2003-05-20 | Asm America | Cleaning of semiconductor processing chambers |
EP1421607A2 (de) | 2001-02-12 | 2004-05-26 | ASM America, Inc. | Verbesserter prozess zur ablagerung von halbleiterfilmen |
US7026219B2 (en) | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
US6957741B2 (en) * | 2001-08-07 | 2005-10-25 | Manfred Franz Axel Freissle | Screening arrangement |
JP5005170B2 (ja) * | 2002-07-19 | 2012-08-22 | エーエスエム アメリカ インコーポレイテッド | 超高品質シリコン含有化合物層の形成方法 |
US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
US6936086B2 (en) * | 2002-09-11 | 2005-08-30 | Planar Systems, Inc. | High conductivity particle filter |
US9443730B2 (en) | 2014-07-18 | 2016-09-13 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US9837271B2 (en) | 2014-07-18 | 2017-12-05 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US10460932B2 (en) | 2017-03-31 | 2019-10-29 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
CN115613007A (zh) * | 2022-10-13 | 2023-01-17 | 上海中欣晶圆半导体科技有限公司 | 一种改善翘曲的成膜方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1138481C2 (de) * | 1961-06-09 | 1963-05-22 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
US3409483A (en) * | 1964-05-01 | 1968-11-05 | Texas Instruments Inc | Selective deposition of semiconductor materials |
US3446936A (en) * | 1966-01-03 | 1969-05-27 | Sperry Rand Corp | Evaporant source |
DE1614893C3 (de) * | 1967-11-28 | 1979-08-09 | Telefunken Patentverwertungs Gmbh, 7900 Ulm | Verfahren zum Verbessern und Stabilisieren des Kennlinienverlaufes eines Halbleiterbaueiementes und Anwendungen hiervon |
JPS509471B1 (de) * | 1968-10-25 | 1975-04-12 | ||
DE1900116C3 (de) * | 1969-01-02 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten |
JPS5311051B2 (de) * | 1973-06-29 | 1978-04-19 |
-
1973
- 1973-12-19 US US426396A patent/US3900597A/en not_active Expired - Lifetime
-
1974
- 1974-12-17 GB GB5447774A patent/GB1470614A/en not_active Expired
- 1974-12-18 JP JP49145507A patent/JPS5095185A/ja active Pending
- 1974-12-19 CA CA216,252A patent/CA1047850A/en not_active Expired
- 1974-12-19 DE DE2460211A patent/DE2460211B2/de not_active Ceased
-
1975
- 1975-01-09 FR FR7500576A patent/FR2255707B1/fr not_active Expired
-
1980
- 1980-12-04 HK HK683/80A patent/HK68380A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US3900597A (en) | 1975-08-19 |
DE2460211A1 (de) | 1975-11-06 |
DE2460211B2 (de) | 1979-05-23 |
GB1470614A (en) | 1977-04-14 |
JPS5095185A (de) | 1975-07-29 |
FR2255707A1 (de) | 1975-07-18 |
FR2255707B1 (de) | 1978-06-23 |
HK68380A (en) | 1980-12-12 |
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