HK68380A - A process for deposition of polycrystalline silicon - Google Patents

A process for deposition of polycrystalline silicon

Info

Publication number
HK68380A
HK68380A HK683/80A HK68380A HK68380A HK 68380 A HK68380 A HK 68380A HK 683/80 A HK683/80 A HK 683/80A HK 68380 A HK68380 A HK 68380A HK 68380 A HK68380 A HK 68380A
Authority
HK
Hong Kong
Prior art keywords
deposition
polycrystalline silicon
polycrystalline
silicon
Prior art date
Application number
HK683/80A
Other languages
English (en)
Inventor
J L Chruma
P G Hilton
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of HK68380A publication Critical patent/HK68380A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
HK683/80A 1973-12-19 1980-12-04 A process for deposition of polycrystalline silicon HK68380A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US426396A US3900597A (en) 1973-12-19 1973-12-19 System and process for deposition of polycrystalline silicon with silane in vacuum

Publications (1)

Publication Number Publication Date
HK68380A true HK68380A (en) 1980-12-12

Family

ID=23690641

Family Applications (1)

Application Number Title Priority Date Filing Date
HK683/80A HK68380A (en) 1973-12-19 1980-12-04 A process for deposition of polycrystalline silicon

Country Status (7)

Country Link
US (1) US3900597A (xx)
JP (1) JPS5095185A (xx)
CA (1) CA1047850A (xx)
DE (1) DE2460211B2 (xx)
FR (1) FR2255707B1 (xx)
GB (1) GB1470614A (xx)
HK (1) HK68380A (xx)

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GB1518564A (en) * 1975-11-25 1978-07-19 Motorola Inc Method for the low pressure pyrolytic deposition of silicon nitride
US4027053A (en) * 1975-12-19 1977-05-31 Motorola, Inc. Method of producing polycrystalline silicon ribbon
US4053335A (en) * 1976-04-02 1977-10-11 International Business Machines Corporation Method of gettering using backside polycrystalline silicon
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
JPS584811B2 (ja) * 1978-10-31 1983-01-27 富士通株式会社 半導体装置の製造方法
US4203387A (en) * 1978-12-28 1980-05-20 General Signal Corporation Cage for low pressure silicon dioxide deposition reactors
JPS55110032A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Method for high-frequency heated epitaxial growth
DE2907371C2 (de) * 1979-02-24 1981-03-12 Heraeus Quarzschmelze Gmbh, 6450 Hanau Hochtemperaturfestes Schutzrohr für Wärmebehandlung von Halbleiterbauelementen
US4228004A (en) * 1979-04-12 1980-10-14 Thermco Products Corporation Method and apparatus for removal of by-products of chemical vapor deposition from oil for vacuum pump
JPS55158623A (en) * 1979-05-29 1980-12-10 Hitachi Ltd Method of controlling semiconductor vapor phase growth
GB2049643B (en) * 1979-05-30 1983-07-20 Siemens Ag Process for the production of silicon having semiconducting proprties
US4263336A (en) * 1979-11-23 1981-04-21 Motorola, Inc. Reduced pressure induction heated reactor and method
US4315968A (en) * 1980-02-06 1982-02-16 Avco Corporation Silicon coated silicon carbide filaments and method
US4444812A (en) * 1980-07-28 1984-04-24 Monsanto Company Combination gas curtains for continuous chemical vapor deposition production of silicon bodies
DD206687A3 (de) * 1981-07-28 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur gasfuehrung fuer lp cvd prozesse in einem rohrreaktor
US4401687A (en) * 1981-11-12 1983-08-30 Advanced Semiconductor Materials America Plasma deposition of silicon
JPS58172217A (ja) * 1982-03-31 1983-10-11 Toshiba Corp 多結晶シリコン膜の形成方法
US4547404A (en) * 1982-08-27 1985-10-15 Anicon, Inc. Chemical vapor deposition process
US4489103A (en) * 1983-09-16 1984-12-18 Rca Corporation SIPOS Deposition method
JPS60200523A (ja) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol シリコン薄膜の製造法
US4556584A (en) * 1984-05-03 1985-12-03 Btu Engineering Corporation Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates
FR2572312B1 (fr) * 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4744863A (en) * 1985-04-26 1988-05-17 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4853669A (en) * 1985-04-26 1989-08-01 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4597160A (en) * 1985-08-09 1986-07-01 Rca Corporation Method of fabricating a polysilicon transistor with a high carrier mobility
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
US5298452A (en) * 1986-09-12 1994-03-29 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US5607511A (en) * 1992-02-21 1997-03-04 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process
US5024972A (en) * 1990-01-29 1991-06-18 Motorola, Inc. Deposition of a conductive layer for contacts
US5181964A (en) * 1990-06-13 1993-01-26 International Business Machines Corporation Single ended ultra-high vacuum chemical vapor deposition (uhv/cvd) reactor
US5112773A (en) * 1991-04-10 1992-05-12 Micron Technology, Inc. Methods for texturizing polysilicon utilizing gas phase nucleation
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
US5695819A (en) * 1991-08-09 1997-12-09 Applied Materials, Inc. Method of enhancing step coverage of polysilicon deposits
JP3121131B2 (ja) * 1991-08-09 2000-12-25 アプライド マテリアルズ インコーポレイテッド 低温高圧のシリコン蒸着方法
US5753559A (en) * 1996-01-16 1998-05-19 United Microelectronics Corporation Method for growing hemispherical grain silicon
KR100652909B1 (ko) * 1998-03-06 2006-12-01 에이에스엠 아메리카, 인코포레이티드 하이 스텝 커버리지를 갖는 실리콘 증착 방법
US6479166B1 (en) 1998-10-06 2002-11-12 Case Western Reserve University Large area polysilicon films with predetermined stress characteristics and method for producing same
US6268068B1 (en) 1998-10-06 2001-07-31 Case Western Reserve University Low stress polysilicon film and method for producing same
US6666924B1 (en) 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
US6564810B1 (en) 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
EP1421607A2 (en) 2001-02-12 2004-05-26 ASM America, Inc. Improved process for deposition of semiconductor films
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US6957741B2 (en) * 2001-08-07 2005-10-25 Manfred Franz Axel Freissle Screening arrangement
JP5005170B2 (ja) * 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US6936086B2 (en) * 2002-09-11 2005-08-30 Planar Systems, Inc. High conductivity particle filter
US9443730B2 (en) 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
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JPS5311051B2 (xx) * 1973-06-29 1978-04-19

Also Published As

Publication number Publication date
US3900597A (en) 1975-08-19
DE2460211A1 (de) 1975-11-06
DE2460211B2 (de) 1979-05-23
GB1470614A (en) 1977-04-14
CA1047850A (en) 1979-02-06
JPS5095185A (xx) 1975-07-29
FR2255707A1 (xx) 1975-07-18
FR2255707B1 (xx) 1978-06-23

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