GB1518564A - Method for the low pressure pyrolytic deposition of silicon nitride - Google Patents
Method for the low pressure pyrolytic deposition of silicon nitrideInfo
- Publication number
- GB1518564A GB1518564A GB4484876A GB4484876A GB1518564A GB 1518564 A GB1518564 A GB 1518564A GB 4484876 A GB4484876 A GB 4484876A GB 4484876 A GB4484876 A GB 4484876A GB 1518564 A GB1518564 A GB 1518564A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon nitride
- low pressure
- pyrolytic deposition
- torr
- pressure pyrolytic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
1518564 Pyrolytic deposition of silicon nitride MOTOROLA Inc 28 Oct 1976 [25 Nov 1975] 44848/76 Heading C1A Silicon nitride is deposited pyrolytically upon a heated substrate by contacting a mixture of a halosilane, i.e. a compound containing silicon, hydrogen and halogen atoms, with the substrate in a vacuum or near vacuum in a resistance heated furnace. Temperatures of 650‹ to 1000‹C and pressures of 300 mill torr to 10 torr are preferred. In the Example the halosilane used is dichlorosilane.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63501275A | 1975-11-25 | 1975-11-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1518564A true GB1518564A (en) | 1978-07-19 |
Family
ID=24546063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4484876A Expired GB1518564A (en) | 1975-11-25 | 1976-10-28 | Method for the low pressure pyrolytic deposition of silicon nitride |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS6010108B2 (en) |
DE (1) | DE2652449C2 (en) |
FR (1) | FR2332802A1 (en) |
GB (1) | GB1518564A (en) |
HK (1) | HK881A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2213836A (en) * | 1987-12-18 | 1989-08-23 | Gen Electric Co Plc | Vacuum deposition process |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3118848C2 (en) * | 1980-05-12 | 1983-05-19 | Mitsubishi Denki K.K., Tokyo | Low pressure coating device |
JPH0248706U (en) * | 1988-09-27 | 1990-04-04 | ||
FR2759362B1 (en) * | 1997-02-10 | 1999-03-12 | Saint Gobain Vitrage | TRANSPARENT SUBSTRATE EQUIPPED WITH AT LEAST ONE THIN LAYER BASED ON SILICON NITRIDE OR OXYNITRIDE AND ITS PROCESS FOR OBTAINING IT |
JP2004071970A (en) * | 2002-08-08 | 2004-03-04 | Shin Etsu Chem Co Ltd | Manufacturing method and manufacturing system of silicon substrate for solar cell |
CN115142048B (en) * | 2022-06-30 | 2023-07-07 | 北海惠科半导体科技有限公司 | Wafer carrier and preparation method of silicon nitride dielectric film |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1251287C2 (en) * | 1962-09-10 | 1975-10-09 | United Aircraft Corporation, East Hartford, Conn. (V.St.A.) | PROCESS FOR THE PRODUCTION OF NON-POROUS SILICON NITRIDE |
FR1521174A (en) * | 1966-05-02 | 1968-04-12 | Siemens Ag | Process for producing a protective layer, in particular on the surface of a semiconductor crystal |
US3549411A (en) * | 1967-06-27 | 1970-12-22 | Texas Instruments Inc | Method of preparing silicon nitride films |
US3652324A (en) * | 1968-08-15 | 1972-03-28 | Westinghouse Electric Corp | A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE |
US3856587A (en) * | 1971-03-26 | 1974-12-24 | Co Yamazaki Kogyo Kk | Method of fabricating semiconductor memory device gate |
US3900597A (en) * | 1973-12-19 | 1975-08-19 | Motorola Inc | System and process for deposition of polycrystalline silicon with silane in vacuum |
-
1976
- 1976-10-28 GB GB4484876A patent/GB1518564A/en not_active Expired
- 1976-11-17 DE DE19762652449 patent/DE2652449C2/en not_active Expired
- 1976-11-19 JP JP51139391A patent/JPS6010108B2/en not_active Expired
- 1976-11-25 FR FR7635591A patent/FR2332802A1/en active Granted
-
1981
- 1981-01-15 HK HK881A patent/HK881A/en unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2213836A (en) * | 1987-12-18 | 1989-08-23 | Gen Electric Co Plc | Vacuum deposition process |
US5063086A (en) * | 1987-12-18 | 1991-11-05 | The General Electric Company P.L.C. | Vacuum deposition process and apparatus for producing films having high uniformity |
GB2213836B (en) * | 1987-12-18 | 1992-08-26 | Gen Electric Co Plc | Vacuum deposition process |
Also Published As
Publication number | Publication date |
---|---|
HK881A (en) | 1981-01-23 |
FR2332802B1 (en) | 1981-12-24 |
JPS6010108B2 (en) | 1985-03-15 |
JPS5265199A (en) | 1977-05-30 |
DE2652449A1 (en) | 1977-05-26 |
DE2652449C2 (en) | 1982-06-09 |
FR2332802A1 (en) | 1977-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19961027 |