WO2020032149A1 - 蒸着マスク、蒸着マスク装置、蒸着マスクの製造方法、蒸着マスク装置の製造方法及び蒸着方法 - Google Patents

蒸着マスク、蒸着マスク装置、蒸着マスクの製造方法、蒸着マスク装置の製造方法及び蒸着方法 Download PDF

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Publication number
WO2020032149A1
WO2020032149A1 PCT/JP2019/031281 JP2019031281W WO2020032149A1 WO 2020032149 A1 WO2020032149 A1 WO 2020032149A1 JP 2019031281 W JP2019031281 W JP 2019031281W WO 2020032149 A1 WO2020032149 A1 WO 2020032149A1
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Prior art keywords
layer
mask
vapor deposition
support
deposition mask
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PCT/JP2019/031281
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English (en)
French (fr)
Japanese (ja)
Inventor
細田　哲史
村田　佳則
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大日本印刷株式会社
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Priority to JP2020535862A priority Critical patent/JP7078118B2/ja
Publication of WO2020032149A1 publication Critical patent/WO2020032149A1/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the present disclosure relates to an evaporation mask, an evaporation mask device, a method for manufacturing an evaporation mask, a method for manufacturing an evaporation mask device, and an evaporation method.
  • display devices used in portable devices such as smartphones and tablet PCs have been required to have high definition, for example, a pixel density of 500 ppi or more.
  • a pixel density of 500 ppi or more There is also a growing demand for portable devices to support Ultra High Definition (UHD).
  • UHD Ultra High Definition
  • the pixel density of the display device is required to be, for example, 800 ppi or more.
  • organic EL display devices have been receiving attention because of their good responsiveness, low power consumption, and high contrast.
  • a method of forming pixels of an organic EL display device a method of forming pixels in a desired pattern using an evaporation mask including through holes arranged in a desired pattern is known. Specifically, first, a substrate for an organic EL display device (organic EL substrate) is charged into a vapor deposition device, and then a vapor deposition mask is brought into close contact with the organic EL substrate in the vapor deposition device, and the organic material is removed from the organic EL device. A vapor deposition process for vapor deposition on the substrate is performed.
  • a vapor deposition mask is manufactured using a plating process, and then the vapor deposition mask is attached to a frame to manufacture a vapor deposition mask device.
  • the frame of the vapor deposition mask device holds the vapor deposition mask stretched. That is, tension is applied to the evaporation mask in a state where the evaporation mask is fixed to the frame. This suppresses the bending of the deposition mask.
  • the tension is applied to the thinned evaporation mask to cause wrinkling and deformation of the evaporation mask.
  • the present disclosure has been made in view of such a point, it is possible to suppress the occurrence of wrinkles and deformation in the evaporation mask, an evaporation mask, an evaporation mask device, a method of manufacturing an evaporation mask, evaporation
  • An object of the present invention is to provide a method of manufacturing a mask device and a method of vapor deposition.
  • a first aspect of the present disclosure is directed to a support having a mask having a plating layer in which a first through-hole is formed, and a second body joined to the mask and having a second through-hole overlapping the first through-hole in plan view.
  • the thickness of the support is 0.20 mm or more and 2.0 mm or less.
  • the support has a first layer joined to the mask, and a second layer joined to the first layer.
  • the second through-hole may penetrate the first layer and the second layer.
  • the first layer and the second layer may be joined to each other by an adhesive, a brazing material, or welding.
  • a fourth aspect of the present disclosure is the vapor deposition mask according to the second aspect or the third aspect described above, wherein a bonding surface of the first layer and the second layer is covered with metal from a side. Is also good.
  • the metal in the vapor deposition mask according to the above-described fourth aspect, may be formed by a plating process.
  • the support further includes a third layer bonded to the second layer. You may.
  • the second layer and the third layer may be joined to each other by an adhesive, a brazing material, or welding.
  • An eighth aspect of the present disclosure is the vapor deposition mask according to the sixth aspect or the seventh aspect described above, wherein a bonding surface of the second layer and the third layer is covered with metal from a side. Is also good.
  • the metal may be formed by plating.
  • the support in the vapor deposition mask according to any one of the first to ninth aspects, may include a material having a rigidity of 50 GPa or more and 65 GPa or less.
  • the vapor deposition mask according to any one of the above-described first aspect to the tenth aspect is joined to the support of the vapor deposition mask, and the second through-hole is formed in a plan view.
  • a twelfth aspect of the present disclosure provides a step of preparing a mask having a plating layer bonded to a base material and having a first through-hole formed therein, and a step of preparing a support having a second through-hole formed therein; Bonding the support and the mask such that the second through-hole of the support overlaps the first through-hole of the mask in plan view, and removing the base material from the mask And wherein the thickness of the support is 0.20 mm or more and 2.0 mm or less.
  • a conductive layer is formed on the base material, and the first through-hole is formed on the conductive layer by the plating layer. May be formed by precipitating.
  • the step of preparing the support includes the step of preparing a first layer and a second layer. And a step of joining the first layer and the second layer to each other.
  • the first layer and the second layer may include: They may be joined together by an adhesive, brazing material or welding.
  • the step of preparing the support includes: attaching the first layer and the second layer to each other.
  • the method may further include a step of covering a joining surface of the first layer and the second layer from the side with a metal.
  • a joining surface of the first layer and the second layer from the side with the metal It may be formed by plating.
  • the step of preparing the support includes a step of preparing a third layer; Bonding the second layer and the third layer to each other.
  • the second layer and the third layer may include: They may be joined together by an adhesive, brazing material or welding.
  • the step of preparing the support includes the step of bringing the second layer and the third layer into contact with each other.
  • the method may further include a step of covering a joining surface of the second layer and the third layer from the side with a metal.
  • a joining surface of the second layer and the third layer with the metal in the step of laterally covering a joining surface of the second layer and the third layer with the metal, It may be formed by plating.
  • a deposition method of depositing a deposition material on a substrate comprising the steps of: preparing a deposition mask device manufactured by the method of manufacturing a deposition mask device according to the above-described twenty-second aspect; A step of preparing the substrate, a step of placing the substrate on the mask of the vapor deposition mask device, and a step of depositing the vapor deposition material on the substrate disposed on the mask. It is.
  • 24A twenty-fourth aspect of the present disclosure may be a deposition mask manufactured by the method for manufacturing a deposition mask according to any one of the twelfth aspect to the twenty-first aspect.
  • 25A twenty-fifth aspect of the present disclosure may be a vapor deposition mask device manufactured by the method for manufacturing a vapor deposition mask device according to the twenty-second aspect described above.
  • FIG. 1 is a diagram for explaining an embodiment of the present disclosure, and is a diagram for explaining a vapor deposition device having a vapor deposition mask device and a vapor deposition method using the vapor deposition device.
  • FIG. 2 is a sectional view showing an example of the organic EL display device manufactured by the vapor deposition device shown in FIG.
  • FIG. 3 is a plan view schematically showing an example of a deposition mask device having a deposition mask.
  • FIG. 4 is a cross-sectional view showing the vapor deposition mask device in a cross section corresponding to line IV-IV in FIG.
  • FIG. 5 is a partially enlarged view (an enlarged view of a portion V in FIG. 3) showing a mask of the vapor deposition mask device of FIG.
  • FIG. 1 is a diagram for explaining an embodiment of the present disclosure, and is a diagram for explaining a vapor deposition device having a vapor deposition mask device and a vapor deposition method using the vapor deposition device.
  • FIG. 6A is a cross-sectional view showing the mask in a cross-section corresponding to line VIA-VIA in FIG.
  • FIG. 6B is a cross-sectional view showing the support of FIG. 4 in more detail.
  • FIG. 7A is a schematic perspective view for explaining the rigidity.
  • FIG. 7B is a diagram for explaining a vapor deposition method using a vapor deposition device.
  • FIG. 8A is a diagram illustrating a step of an example of a method of manufacturing a pattern substrate used for manufacturing a mask by a plating process.
  • FIG. 8B is a diagram illustrating a step of an example of a method of manufacturing a pattern substrate used for manufacturing a mask by a plating process.
  • FIG. 8A is a diagram illustrating a step of an example of a method of manufacturing a pattern substrate used for manufacturing a mask by a plating process.
  • FIG. 8C is a diagram illustrating a step of an example of a method of manufacturing a pattern substrate used for manufacturing a mask by plating.
  • FIG. 8D is a diagram illustrating a step of an example of a method of manufacturing a pattern substrate used for manufacturing a mask by a plating process.
  • FIG. 9A is a diagram illustrating a step of an example of a method of manufacturing a mask by plating.
  • FIG. 9B is a diagram illustrating a step of an example of a method of manufacturing a mask by plating.
  • FIG. 9C is a diagram illustrating a step of an example of a method of manufacturing a mask by plating.
  • FIG. 9D is a diagram illustrating a step of an example of a method for manufacturing a mask by plating.
  • FIG. 9A is a diagram illustrating a step of an example of a method of manufacturing a mask by plating.
  • FIG. 9B is a diagram illustrating a step of an example of a method
  • FIG. 10A is a diagram showing a step of forming a resist pattern on a metal plate.
  • FIG. 10B is a diagram showing a first surface etching step.
  • FIG. 10C is a diagram showing a second surface etching step.
  • FIG. 10D is a diagram showing a step of removing the resin and the resist pattern from the metal plate.
  • FIG. 11A is a view illustrating one step of an example of a method for manufacturing a deposition mask.
  • FIG. 11B is a diagram illustrating a step of the example of the method for manufacturing the evaporation mask.
  • FIG. 11C is a diagram illustrating a step of the example of the method for manufacturing the evaporation mask.
  • FIG. 11A is a view illustrating one step of an example of a method for manufacturing a deposition mask.
  • FIG. 11B is a diagram illustrating a step of the example of the method for manufacturing the evaporation mask.
  • FIG. 11C is a diagram illustrating
  • FIG. 12A is a view illustrating one step of an example of a method for manufacturing a vapor deposition mask device.
  • FIG. 12B is a diagram illustrating a step of the example of the method for manufacturing the evaporation mask apparatus.
  • FIG. 12C is a diagram illustrating a step of the example of the method for manufacturing the evaporation mask device.
  • FIG. 13A is a diagram showing a step of depositing a deposition material on an organic EL substrate.
  • FIG. 13B is a diagram illustrating a step of depositing a deposition material on the organic EL substrate.
  • FIG. 14 is a diagram showing a step of depositing a deposition material on an organic EL substrate.
  • FIG. 15 is a plan view schematically showing a modification of the mask.
  • FIG. 12A is a view illustrating one step of an example of a method for manufacturing a vapor deposition mask device.
  • FIG. 12B is a diagram illustrating a step of the example of the method for manufacturing
  • FIG. 16 is a sectional view showing a modification of the support.
  • FIG. 17A is a cross-sectional view illustrating a modification of the method of manufacturing a support.
  • FIG. 17B is a cross-sectional view illustrating a modification of the method of manufacturing the support.
  • FIG. 17C is a cross-sectional view illustrating a modification of the method of manufacturing a support.
  • FIG. 18A is a cross-sectional view illustrating a modification of the support.
  • FIG. 18B is a cross-sectional view illustrating a modification of the support.
  • FIG. 18C is a cross-sectional view illustrating a modification of the method of manufacturing the support.
  • FIG. 18D is a cross-sectional view illustrating a modification of the method of manufacturing a support.
  • FIG. 18E is a cross-sectional view illustrating a modification of the method of manufacturing the support.
  • FIG. 18F is a cross-sectional view showing a modification of the support.
  • FIG. 19A is a cross-sectional view showing a modification of the method for manufacturing a mask.
  • FIG. 19B is a cross-sectional view showing a modification of the method for manufacturing a mask.
  • FIG. 19C is a cross-sectional view showing a modification of the method for manufacturing a mask.
  • the “plate” is a concept including a member that can be called a sheet or a film.
  • surface (sheet surface, film surface)” refers to a target plate-shaped member (sheet-shaped member) when the target plate-shaped (sheet-shaped, film-shaped) member is viewed as a whole and globally. , A film-shaped member).
  • the normal direction used for a plate-like (sheet-like or film-like) member refers to the normal direction to the surface (sheet surface, film surface) of the member.
  • the shape and geometric conditions and the degree thereof are specified. For example, terms such as “parallel” and “orthogonal” and values of length and angle are strictly limited. Without any limitation, it should be interpreted to include a range in which similar functions can be expected.
  • a certain structure such as a certain member or a certain region is referred to as “above (or below)”, “upper (or below)” other structures such as another member or another region. ) ”Or“ upward (or downward) ”, unless stated otherwise, not only when one configuration is in direct contact with another configuration, but also when one configuration is in contact with another configuration. It shall be interpreted to include the case where another configuration is included between them.
  • the description may be made using the phrase “up (or upper or upper)” or “down” (or lower or lower), but the vertical direction may be reversed.
  • the numerical range represented by the symbol “to” includes the numerical value before and after the symbol “to”.
  • the numerical range defined by the expression “34-38% by mass” is the same as the numerical range defined by the expression "34% by mass or more and 38% by mass or less”.
  • a plate-shaped member has a rectangular shape in a plan view
  • the member has a rectangular shape when the member is viewed from a normal direction.
  • an explanation will be given of an example relating to a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device, and a method for manufacturing the same.
  • the present embodiment can be applied to an evaporation mask used for various uses.
  • the vapor deposition device 90 may include a vapor deposition source (for example, a crucible 94), a heater 96, and a vapor deposition mask device 10 therein. Further, the vapor deposition device 90 may further include an exhaust unit (not shown) for making the inside of the vapor deposition device 90 a vacuum atmosphere.
  • the crucible 94 contains a vapor deposition material 98 such as an organic light emitting material.
  • the heater 96 heats the crucible 94 to evaporate the deposition material 98 under a vacuum atmosphere.
  • the deposition mask device 10 is arranged so as to face the crucible 94.
  • the vapor deposition mask device 10 may include a vapor deposition mask 20 and a frame 15 joined to a support 40 of the vapor deposition mask 20 which will be described later.
  • the vapor deposition mask 20 may be supported by the frame 15 in a state where the vapor deposition mask 20 is pulled in the plane direction so that the vapor deposition mask 20 is not bent. It may be supported by the frame 15 without being pulled in the direction.
  • the vapor deposition mask device 10 is disposed in the vapor deposition device 90 such that the vapor deposition mask 20 faces a substrate to be vapor-deposited (for example, an organic EL substrate) 92 to which the vapor deposition material 98 is to be adhered. It may be.
  • the vapor deposition mask device 10 may include a magnet 93 disposed on a surface of the substrate to be vapor-deposited 92 on the side opposite to the vapor-deposition mask 20.
  • the deposition mask 20 can be attracted to the magnet 93 side by magnetic force, and the deposition mask 20 can be brought into close contact with the substrate to be deposited 92.
  • the deposition mask 20 includes a mask 30 having a plating layer 31 in which a first through hole 35 is formed, and a second through hole that is bonded to the mask 30 and overlaps the first through hole 35 in plan view. 45 provided with the support member 40 on which the support member 45 is formed. Among them, a plurality of first through holes 35 of the mask 30 may be formed.
  • the mask 30 may have a first surface 30a and a second surface 30b opposite to the first surface 30a.
  • the mask 30 is disposed between the deposition target substrate 92 and the crucible 94.
  • the mask 30 is supported in the vapor deposition device 90 such that the first surface 30a faces the lower surface of the substrate 92 to be deposited, in other words, the second surface 30b faces the crucible 94, and It may be used to deposit the deposition material 98 on the substrate 92.
  • the vapor deposition material 98 that evaporates from the crucible 94 and reaches the vapor deposition mask 20 from the second surface 30 b side of the mask 30 is deposited on the second through-hole 45 of the support 40 and the second material of the mask 30. It adheres to the substrate 92 through one through hole 35.
  • the deposition material 98 can be formed on the surface of the substrate 92 in a desired pattern corresponding to the position of the first through hole 35 of the mask 30.
  • FIG. 2 is a cross-sectional view showing the organic EL display device 100 manufactured using the vapor deposition device 90 of FIG.
  • the organic EL display device 100 may include a substrate to be deposited (organic EL substrate) 92 and pixels including a deposition material 98 provided in a pattern. Note that, in the organic EL display device 100 of FIG. 2, electrodes for applying a voltage to the pixels including the evaporation material 98 are omitted.
  • the organic EL display device 100 in FIG. 2 may further include other components of the organic EL display device. Therefore, the organic EL display device 100 in FIG. 2 can be called an intermediate of the organic EL display device.
  • the vapor deposition devices 90 each having the vapor deposition mask device 10 corresponding to each color are prepared, and the substrates 92 to be vapor deposited are sequentially put into each vapor deposition device 90.
  • an organic light emitting material for red, an organic light emitting material for green, and an organic light emitting material for blue can be sequentially deposited on the substrate 92 to be deposited.
  • the deposition process may be performed inside the deposition device 90 in a high-temperature atmosphere.
  • the vapor deposition mask 20, the frame 15, and the substrate to be vapor-deposited 92 held inside the vapor deposition device 90 are also heated.
  • the mask 30, the support 40, the frame 15, and the deposition target substrate 92 of the deposition mask 20 exhibit a dimensional change behavior based on their respective thermal expansion coefficients.
  • the thermal expansion coefficient of the mask 30, the support 40, and the frame 15 be equal to the thermal expansion coefficient of the substrate 92 to be evaporated.
  • an iron alloy containing nickel can be used as a main material of the mask 30, the support 40, and the frame 15.
  • an iron alloy containing 30% by mass or more and 54% by mass or less of nickel can be used as a material of members constituting the mask 30, the support 40, and the frame 15.
  • iron alloy containing nickel examples include an Invar material containing 34% by mass or more and 38% by mass or less of nickel, a super Invar material containing 30% by mass or more and 34% by mass or less of nickel in addition to cobalt, 38% by mass
  • a low thermal expansion Fe—Ni-based plating alloy containing at least 54% by mass or less of nickel can be used.
  • the thermal expansion coefficient of the mask 30, the support 40, and the substrate to be deposited 92 is determined.
  • the thermal expansion coefficient of the substrate 92 does not need to be equal to the thermal expansion coefficient.
  • a material other than the above-described iron alloy may be used as a material for forming the mask 30 and the support 40.
  • an iron alloy other than the above-described iron alloy including nickel such as an iron alloy including chromium
  • an iron alloy containing chromium for example, an iron alloy called so-called stainless steel can be used.
  • a metal or an alloy other than an iron alloy such as nickel or a nickel-cobalt alloy may be used.
  • the mask 30 may be made by plating. As shown in FIG. 3, the mask 30 may have a substantially rectangular shape in plan view.
  • the mask 30 may include a frame-shaped ear 17 constituting an outer edge 30 e of the mask 30, and an intermediate portion 18 surrounded by the ear 17.
  • the ear 17 is a part to be attached to the support 40 during the vapor deposition step using the vapor deposition mask 20. Note that the ear 17 is not a region through which a deposition material intended to be deposited on the organic EL substrate 92 passes.
  • the intermediate portion 18 of the deposition mask 20 includes an effective region 22 in which first through holes 35 (see FIGS. 4 and 5) are formed in a regular arrangement, and an effective region 22. And a surrounding area 23 surrounding the area 22.
  • the peripheral region 23 is a region for supporting the effective region 22, and is not a region through which a vapor deposition material 98 intended to be vapor-deposited on the organic EL substrate 92 passes.
  • the effective area 22 of the mask 30 faces the area serving as the display area of the organic EL substrate 92 where the organic light emitting material is deposited to form pixels in the evaporation mask 20 used for vapor deposition of the organic light emitting material.
  • the region within the deposition mask 20 is a region for supporting the effective region 22, and is not a region through which a vapor deposition material 98 intended to be vapor-deposited on the organic EL substrate 92 passes.
  • each effective area 22 has a substantially quadrangular shape in plan view, and more precisely, a substantially rectangular contour in plan view.
  • each effective area 22 can have various contours according to the shape of the display area of the organic EL substrate 92. That is, each effective area 22 may have a contour corresponding to the display area of each application displayed by the organic EL display device 100.
  • each effective area 22 May have a circular contour.
  • the plurality of effective areas 22 of the deposition mask 20 may be arranged at predetermined intervals along two directions orthogonal to each other.
  • one effective area 22 corresponds to one organic EL display device. That is, according to the vapor deposition mask device 10 (mask 30) shown in FIGS. 3 and 4, multi-face deposition is possible. Further, as shown in FIG. 5, even if the plurality of first through holes 35 formed in each effective area 22 are arranged at a predetermined pitch along two directions orthogonal to each other in the effective area 22. Good.
  • the plating layer 31 of the mask 30 includes a first metal layer 32 provided with a first opening 30c in a predetermined pattern, and a second opening 30d communicating with the first opening 30c.
  • the second metal layer 37 may be included.
  • the first metal layer 32 forms the first surface 30a of the mask 30, and the second metal layer 37 forms the second surface 30b of the mask 30.
  • the first opening 30c and the second opening 30d may communicate with each other to form the first through-hole 35 penetrating the mask 30.
  • the opening size and opening shape of the first through hole 35 on the first surface 30a side of the mask 30 may be defined by the first opening 30c of the first metal layer 32.
  • the opening size and opening shape of the first through hole 35 on the second surface 30b side of the mask 30 may be defined by the second opening 30d of the second metal layer 37.
  • both the shape defined by the first opening 30c of the first metal layer 32 and the shape defined by the second opening 30d of the second metal layer 37 are given to the first through hole 35. It may be.
  • the first opening 30c and the second opening 30d constituting the first through-hole 35 may be substantially polygonal in plan view.
  • the first opening 30c and the second opening 30d have a substantially square shape, more specifically, a substantially square shape.
  • the first opening 30c and the second opening 30d may have another substantially polygonal shape such as a substantially hexagonal shape or a substantially octagonal shape.
  • the “substantially polygonal shape” is a concept including a shape in which corners of a polygon are rounded.
  • the first opening 30c and the second opening 30d may have a circular shape. Further, as long as the second opening 30d has a contour surrounding the first opening 30c in a plan view, the shape of the first opening 30c and the shape of the second opening 30d do not need to be similar. .
  • reference numeral 41 denotes a connection portion where the first metal layer 32 and the second metal layer 37 are connected.
  • the symbol S0 indicates the size of the first through hole 35 in the connection portion 41 between the first metal layer 32 and the second metal layer 37.
  • FIG. 6A shows an example in which the first metal layer 32 and the second metal layer 37 are in contact with each other.
  • the present invention is not limited to this, and the first metal layer 32 and the second metal layer 37 may be in contact with each other.
  • Other layers may be interposed between them.
  • a catalyst layer for promoting the deposition of the second metal layer 37 on the first metal layer 32 may be provided between the first metal layer 32 and the second metal layer 37.
  • the opening size S2 of the first through hole 35 (second opening 30d) on the second surface 30b is equal to the opening size of the first through hole 35 (first opening 30c) on the first surface 30a. It may be larger than S1.
  • the vapor deposition material 98 flying from the second surface 30b side of the mask 30 toward the mask 30 adheres to the organic EL substrate 92 in order through the second opening 30d and the first opening 30c of the first through hole 35.
  • the area of the organic EL substrate 92 to which the deposition material 98 adheres is mainly determined by the opening size S1 and the opening shape of the first through hole 35 on the first surface 30a. 6A, the vapor deposition material 98 moves along the normal direction N of the mask 30 from the crucible 94 toward the organic EL substrate 92, as indicated by an arrow from the second surface 30b side to the first surface 30a.
  • the mask 30 may move in a direction greatly inclined with respect to the normal direction N of the mask 30.
  • the opening size S2 of the first through hole 35 on the second surface 30b is the same as the opening size S1 of the first through hole 35 on the first surface 30a
  • Most of the vapor deposition material 98 moving in the largely inclined direction reaches the wall surface 36 of the second opening 30d of the first through hole 35 before reaching the organic EL substrate 92 through the first through hole 35. And adhere. Therefore, in order to increase the utilization efficiency of the evaporation material 98, it can be said that it is preferable to increase the opening size S2 of the second opening 30d.
  • the path of the deposition material 98 passes through the end 38 of the first through hole 35 (second opening 30 d) on the second surface 30 b side of the mask 30, and can reach the organic EL substrate 92.
  • the path having the minimum angle with respect to the normal direction N of the mask 30 is represented by reference numeral L1.
  • the angle formed between the path L1 and the normal direction N of the mask 30 is represented by a symbol ⁇ 1.
  • the above-mentioned opening dimensions S0, S1, S2 are appropriately set in consideration of the pixel density of the organic EL display device, the desired value of the above-mentioned angle ⁇ 1, and the like.
  • the opening size S0 of the first through hole 35 in the connection portion 41 can be set in a range of 20 ⁇ m or more and 60 ⁇ m or less.
  • the opening dimension S1 of the first opening 30c on the first surface 30a is set in the range of 10 ⁇ m or more and 50 ⁇ m or less, and the opening size S2 of the second opening 30d on the second surface 30b is 15 ⁇ m or more and 80 ⁇ m or less. It can be set within a range.
  • the thickness T0 of the mask 30 described above can be, for example, not less than 2.0 ⁇ m and not more than 50 ⁇ m.
  • the range of the thickness T0 of the mask 30 may be determined by a first group including 2.0 ⁇ m, 5.0 ⁇ m, 10 ⁇ m, and 15 ⁇ m and / or a second group including 20 ⁇ m, 30 ⁇ m, 40 ⁇ m, and 50 ⁇ m.
  • the lower limit of the range of the thickness T0 of the mask 30 may be determined by any one of the values included in the above-described first group.
  • the lower limit of the range of the thickness T0 of the mask 30 may be 2.0 ⁇ m or more, 5.0 ⁇ m or more, 10 ⁇ m or more, or 15 ⁇ m or more.
  • the upper limit of the range of thickness T0 of mask 30 may be determined by any one of the values included in the above-described second group.
  • the upper limit of the range of the thickness T0 of the mask 30 may be 20 ⁇ m or less, 30 ⁇ m or less, 40 ⁇ m or less, or 50 ⁇ m or less.
  • the range of the thickness T0 of the mask 30 may be determined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group. For example, it may be from 2.0 ⁇ m to 50 ⁇ m, from 5.0 ⁇ m to 40 ⁇ m, from 10 ⁇ m to 30 ⁇ m, or from 15 ⁇ m to 20 ⁇ m.
  • the range of the thickness T0 of the mask 30 may be determined by a combination of any two of the values included in the first group, and may be, for example, 2.0 ⁇ m or more and 15 ⁇ m or less, or 2 ⁇ m or less.
  • the thickness may be from 0.0 ⁇ m to 10 ⁇ m, from 5.0 ⁇ m to 15 ⁇ m, or from 5.0 ⁇ m to 10 ⁇ m.
  • the range of the thickness T0 of the mask 30 may be determined by a combination of any two of the values included in the above-described second group, and may be, for example, 20 ⁇ m or more and 50 ⁇ m or less, or 20 ⁇ m or more and 40 ⁇ m or less. Or less, may be 30 ⁇ m or more and 50 ⁇ m or less, or may be 30 ⁇ m or more and 40 ⁇ m or less.
  • the support 40 may have a substantially rectangular shape in plan view.
  • the support 40 may have a larger dimension than the mask 30 in the plane direction, and the outline defining the support 40 may surround the outline defining the mask 30 in plan view.
  • the support 40 may be attached to the mask 30 such that each side of the support 40 corresponds to each side of the mask 30.
  • the plurality of second through holes 45 are formed in the support 40, and the second through holes 45 may be larger than the effective area 22 of the mask 30 in a plan view. Further, one second through-hole 45 of the support 40 may correspond to one effective region 22 of the mask 30.
  • the second through-hole 45 may have, for example, a substantially rectangular shape in plan view, or more precisely, a substantially rectangular shape in plan view.
  • each second through-hole 45 can have various contours in accordance with the shape of the display area of the substrate to be evaporated (organic EL substrate) 92.
  • each second through-hole 45 may have a circular contour.
  • FIG. 3 shows that the second through-holes 45 have the same shape in plan view, but the present invention is not limited to this.
  • Each of the second through-holes 45 has a different opening shape. It may be.
  • the support 40 may have a plurality of second through holes 45 having different shapes in plan view.
  • a support region 46 may be provided around the second through-hole 45, and the support region 46 may be configured to support the peripheral region 23 of the mask 30.
  • the support 40 can support the mask 30 so as to surround the effective area 22 of the mask 30, so that wrinkles and deformation of the mask 30 can be effectively suppressed.
  • the support region 46 is not a region through which a deposition material 98 intended to be deposited on the organic EL substrate 92 passes.
  • the support 40 will be described in more detail with reference to FIG. 6B.
  • the plurality of second through-holes 45 are formed on one side (in the illustrated example, the first side of the mask 30) along the normal direction n of the support 40 (the normal direction N of the mask 30). It may penetrate from the first surface 400a which is the side facing the two surfaces 30b) to the second surface 400b which is the other side along the normal direction n of the support 40.
  • the first concave portion 401 is formed by etching on the first surface 64a of the metal plate 64 on one side in the normal direction n of the support 40, and A second recess 402 is formed in the second surface 64b of the metal plate 64 on the other side in the normal direction n.
  • the first concave portion 401 may be connected to the second concave portion 402 so that the second concave portion 402 and the first concave portion 401 communicate with each other.
  • the second through-hole 45 may be configured by a second recess 402 and a first recess 401 connected to the second recess 402.
  • the thickness T1 of the support 40 is not less than 0.20 mm and not more than 2.0 mm.
  • the thickness T1 of the support 40 is 0.20 mm or more, the rigidity of the deposition mask 20 can be improved. Thereby, it is possible to prevent the mask 30 from being wrinkled or deformed. Further, since the thickness T1 of the support 40 is 2.0 mm or less, when the substrate 51 is peeled off from the mask 30 bonded to the support 40 as described later, a problem that the base 51 cannot be removed is suppressed. can do.
  • the range of the thickness T1 of the support 40 is a first group consisting of 0.20 mm, 0.50 mm, 0.75 mm, and 1.0 mm, and / or 1.2 mm, 1.5 mm, 1.8 mm, and 2.0 mm. May be determined by a second group consisting of
  • the lower limit of the range of the thickness T1 of the support 40 may be determined by any one of the values included in the above-described first group.
  • the lower limit of the range of the thickness T1 of the support 40 may be 0.20 mm or more, 0.50 mm or more, 0.75 mm or more, or 1.0 mm or more. You may.
  • the upper limit of the range of the thickness T1 of the support 40 may be determined by any one of the values included in the above-described second group.
  • the upper limit of the range of the thickness T1 of the support 40 may be 1.2 mm or less, 1.5 mm or less, 1.8 mm or less, or 2.0 mm or less. You may.
  • the range of the thickness T1 of the support 40 may be determined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group.
  • the range of the thickness T1 of the support 40 may be determined by a combination of any two of the values included in the above-described first group. For example, the range may be 0.20 mm or more and 1.0 mm or less. It may be 0.20 mm or more and 0.75 mm or less, 0.50 mm or more and 1.0 mm or less, or 0.50 mm or more and 0.75 mm or less.
  • the range of the thickness T1 of the support 40 may be determined by a combination of any two of the values included in the above-described second group, and may be, for example, 1.2 mm or more and 2.0 mm or less. It may be 1.2 mm or more and 1.8 mm or less, 1.5 mm or more and 2.0 mm or less, or 1.5 mm or more and 1.8 mm or less.
  • the support 40 preferably contains a material having a rigidity of 50 GPa or more and 65 GPa or less.
  • the rigidity G can be calculated as follows. That is, as shown in FIG. 7A, it is assumed that the side surface of the rectangular parallelepiped elastic body E is inclined when a force parallel to the upper surface is applied to the elastic body E while the lower surface is fixed. In this case, assuming that the surface area of the upper surface of the elastic body E is S, the applied force is F, and the inclination of the side surface is ⁇ , the rigidity G can be calculated by the following equation (1).
  • the above-described rigidity can also be obtained by measuring a natural frequency using a resonance method.
  • a test piece having a width (W) of 10 mm, a length (L) of 60 mm, and a thickness (t) of 0.5 mm is prepared from the material constituting the support 40.
  • a test apparatus eg, EG-HT, manufactured by Japan Techno Plus Co.
  • the other end in the longitudinal direction is set as a free end.
  • torsional vibration for example, 10 Hz or more and 200 Hz or less is applied to the other end.
  • K1 is a device constant
  • K2 is a constant.
  • the range of the rigidity of the material of the support 40 may be determined by a first group of 50 GPa, 52 GPa, 54 GPa and 56 GPa, and / or a second group of 58 GPa, 60 GPa, 62 GPa and 65 GPa.
  • the lower limit of the range of the rigidity of the material of the support 40 may be determined by any one of the values included in the above-described first group.
  • the lower limit of the range of the rigidity of the material of the support 40 may be 50 GPa or more, 52 GPa or more, 54 GPa or more, or 56 GPa or more.
  • the upper limit of the range of the rigidity of the material of the support 40 may be determined by any one of the values included in the above-described second group.
  • the upper limit of the range of the rigidity of the material of the support 40 may be 58 GPa or less, 60 GPa or less, 62 GPa or less, or 65 GPa or less.
  • the range of the rigidity of the material of the support 40 is determined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group.
  • the range of the rigidity of the material of the support 40 may be determined by a combination of any two of the values included in the above-described first group, and may be, for example, 50 GPa or more and 56 GPa or less, It may be 50 GPa or more and 54 GPa or less, 52 GPa or more and 56 GPa or less, or 52 GPa or more and 54 GPa or less.
  • the range of the rigidity of the material of the support 40 may be determined by a combination of any two of the values included in the above-described second group, and may be, for example, 58 GPa or more and 65 GPa or less, It may be 58 GPa or more and 62 GPa or less, 60 GPa or more and 65 GPa or less, or 60 GPa or more and 62 GPa or less.
  • an iron alloy containing nickel can be used as a main material constituting the above-described support member 40.
  • an iron alloy such as an invar material containing 34% by mass or more and 38% by mass or less of nickel or a super invar material containing cobalt in addition to nickel can be used.
  • the invention is not limited thereto, and an iron alloy other than the above-described iron alloy containing nickel, such as an iron alloy containing chromium, may be used as a main material of the support 40.
  • an iron alloy containing chromium for example, an iron alloy called so-called stainless steel can be used.
  • a metal or an alloy other than an iron alloy such as nickel or a nickel-cobalt alloy may be used.
  • the vapor deposition process can be performed inside the vapor deposition device 90.
  • the evaporation process may be performed while moving the crucible 94 and the heater 96 along the surface direction of the evaporation mask 20.
  • a portion of the mask 30 of the vapor deposition mask 20 held inside the vapor deposition device 90 facing the heater 96 absorbs radiant heat supplied from the heater 96, and Thermally expands.
  • the heater 96 of the mask 30 faces the heater 96. Since the portion is thin and elongated, the heat capacity is smaller than that of the substrate to be deposited 92. Therefore, the portion between the adjacent first through holes 35 of the mask 30 thermally expands, and the mask 30 thermally expands so as to extend in the longitudinal direction.
  • the mask 30 of the vapor deposition mask 20 thermally expanded by being heated by the heater 96 thermally expands with respect to the deposition target substrate 92.
  • the evaporation material 98 may move from a place where evaporation should be originally performed.
  • the edge of the pattern corresponding to the position of the first through hole 35 of the mask 30 is blurred or the shape of the pattern is enlarged.
  • the higher the definition of the pattern the more this problem cannot be ignored, and this is one factor that limits the definition of the pattern.
  • one second through-hole 45 of the support 40 may correspond to one effective region 22 of the mask 30.
  • a support region 46 may be provided around the second through hole 45, and the support region 46 may be configured to support the peripheral region 23 of the mask 30.
  • an iron alloy such as an invar material having a rigidity of 50 GPa or more and containing 34% by mass or more and 38% by mass or less of nickel or a super invar material further containing nickel in addition to nickel is used. be able to.
  • the support body 40 made of a material having a rigidity of 50 GPa or more can support the mask 30 so as to surround the effective area 22 of the mask 30, thereby suppressing local thermal expansion of the mask 30. be able to.
  • the frame 15 may be formed in a substantially rectangular frame shape in plan view, and the frame 15 is provided with an opening 15 a overlapping the second through hole 45 of the support 40 in plan view. May be.
  • the outline defining the opening 15a in plan view may surround all of the outline defining the second through-hole 45.
  • the frame 15 may have a dimension larger than the support 40 in the plane direction, and the outline defining the frame 15 may surround the outline defining the support 40 in plan view. .
  • the frame 15 may be attached to the support 40 such that each side of the frame 15 corresponds to each side of the support 40.
  • the above-described mask 30 and support body 40 may be joined to each other by a plurality of first joining portions 19a. Further, the support 40 and the frame 15 described above may be joined to each other by the plurality of second joining portions 19b.
  • the first joint 19a may be arranged along the outer edge 30e of the mask 30, and the second joint 19b may be arranged along the outer edge 40e of the support 40.
  • the mask 30 and the support 40 may have a substantially rectangular outline in plan view. Therefore, the joints 19a and 19b may also be arranged in a substantially rectangular pattern along the outer edges 30e and 40e, respectively. In the example shown in FIG.
  • the joints 19a and 19b are arranged in a straight line at a certain distance from the outer edges 30e and 40e, respectively. That is, in the example shown in FIG. 3, the joints 19a and 19b are arranged along a direction parallel to the direction in which the outer edges 30e and 40e extend.
  • the joints 19a and 19b are arranged at equal intervals along the direction in which the outer edges 30e and 40e extend.
  • the mask 30 and the support 40, and the support 40 and the frame 15 may be joined to each other by spot welding.
  • the invention is not limited to this, and the mask 30 and the support 40, and the mask 30 and the frame 15 may be joined to each other by another fixing means such as an adhesive.
  • a mask 30 having a plating layer 31 in which a first through hole 35 is formed, which is bonded to a base material 51 is prepared.
  • the base material 51 is prepared.
  • the material constituting the base material 51 and the thickness of the base material 51 are not particularly limited as long as they have insulation properties and appropriate strength.
  • a glass material having high light transmittance can be suitably used.
  • the base material 51 When the mask 30 and the support body 40 or the support body 40 and the frame 15 are fixed to each other using an adhesive, glass, synthetic resin, metal, or the like is used as a material forming the base material 51. be able to. In this case, the base material 51 does not have to have light transmittance.
  • a glass material is used as the base material 51.
  • a conductive material layer 52a made of a conductive material is formed on the base material 51.
  • the conductive material layer 52a is a layer that becomes the conductive layer 52 by being patterned.
  • a material for forming the conductive material layer 52a a material having conductivity such as a metal material or an oxide conductive material is appropriately used. Examples of the metal material include chromium and copper.
  • a material having high adhesion to the first resist pattern 53 described later is used as a material forming the conductive material layer 52a.
  • the first resist pattern 53 is formed by patterning a so-called dry film, such as a resist film containing an acrylic photocurable resin
  • copper is used as a material for forming the conductive material layer 52a. Is preferably used.
  • the conductive material layer 52a is formed by, for example, sputtering or electroless plating. If an attempt is made to form the conductive material layer 52a thick, it takes a long time to form the conductive material layer 52a. On the other hand, if the thickness of the conductive material layer 52a is too small, the resistance value increases, and it becomes difficult to form the first metal layer 32 by the electrolytic plating process. Therefore, for example, the thickness of the conductive material layer 52a is preferably in the range of 0.050 ⁇ m to 3.0 ⁇ m.
  • the range of the thickness of the conductive material layer 52a is 0.050 ⁇ m, 0.075 ⁇ m, 0.10 ⁇ m and 0.50 ⁇ m in the first group, and / or 1.0 ⁇ m, 1.5 ⁇ m, 2.0 ⁇ m and 3. It may be determined by a second group of 0 ⁇ m.
  • the lower limit of the range of the thickness of conductive material layer 52a may be determined by any one of the values included in the above-described first group.
  • the lower limit of the thickness range of the conductive material layer 52a may be 0.050 ⁇ m or more, may be 0.075 ⁇ m or more, may be 0.10 ⁇ m or more, and may be 0.50 ⁇ m or more. There may be.
  • the upper limit of the range of the thickness of conductive material layer 52a may be determined by any one of the values included in the above-described second group.
  • the upper limit of the thickness range of the conductive material layer 52a may be 1.0 ⁇ m or less, 1.5 ⁇ m or less, 2.0 ⁇ m or less, or 3.0 ⁇ m or less. There may be.
  • the range of the thickness of the conductive material layer 52a is determined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group.
  • the thickness of the conductive material layer 52a may be determined by a combination of any two of the values included in the above-described first group, and is, for example, 0.050 ⁇ m or more and 0.50 ⁇ m or less.
  • the thickness may be 0.050 ⁇ m or more and 0.10 ⁇ m or less, 0.075 ⁇ m or more and 0.50 ⁇ m or less, or 0.075 ⁇ m or more and 0.10 ⁇ m or less.
  • the range of the thickness of the conductive material layer 52a may be determined by a combination of any two of the values included in the above-described second group, and is, for example, 1.0 ⁇ m or more and 3.0 ⁇ m or less. It may be 1.0 ⁇ m or more and 2.0 ⁇ m or less, 1.5 ⁇ m or more and 3.0 ⁇ m or less, or 1.5 ⁇ m or more and 2.0 ⁇ m or less.
  • a first resist pattern 53 having a predetermined pattern is formed on the conductive material layer 52a.
  • a method of forming the first resist pattern 53 a photolithography method or the like can be employed as in the case of the second resist pattern 55 described later.
  • a method for irradiating the material for the first resist pattern 53 with light in a predetermined pattern a method using an exposure mask that transmits exposure light in a predetermined pattern, or a method for exposing light to the first resist pattern A method of scanning relatively with respect to the material may be adopted.
  • FIG. 8C a portion of the conductive material layer 52a that is not covered with the first resist pattern 53 is removed by etching.
  • the first resist pattern 53 is removed. Thereby, the pattern substrate 50 on which the conductive layer 52 having the pattern corresponding to the first metal layer 32 is formed can be obtained.
  • the plating layer 31 is deposited on the conductive layer 52 using the substrate 51 (pattern substrate 50) on which the conductive layer 52 is formed.
  • the first metal layer 32 provided with the first openings 30c in a predetermined pattern is formed on the insulating base material 51.
  • a first plating process is performed in which a first plating solution is supplied onto the base material 51 on which the conductive layer 52 is formed, and the first metal layer 32 is deposited on the conductive layer 52.
  • the substrate 51 on which the conductive layer 52 is formed is immersed in a plating tank filled with a first plating solution. Thereby, as shown in FIG. 9A, it is possible to obtain the first metal layer 32 in which the first openings 30c are provided in a predetermined pattern on the base material 51.
  • the thickness of the first metal layer 32 may be, for example, 5.0 ⁇ m or less. Further, forming the first metal layer 32 on the base material 51 is not limited to forming the first metal layer 32 directly on the base material 51, and other layers such as the conductive layer 52 may be formed on the base material 51. And forming the first metal layer 32 through the intermediary.
  • the first metal layer 32 includes not only a portion overlapping the conductive layer 52 when viewed along the Non-overlapping portions can also be formed. This is because the first metal layer 32 is further deposited on the surface of the first metal layer 32 deposited on the portion overlapping the end portion 54 of the conductive layer 52. As a result, as shown in FIG. 9A, the end 33 of the first opening 30c may be located at a portion that does not overlap with the conductive layer 52 when viewed along the normal direction of the base material 51.
  • the specific method of the first plating process is not particularly limited as long as the first metal layer 32 can be deposited on the conductive layer 52.
  • the first plating process may be performed as a so-called electrolytic plating process in which a current flows through the conductive layer 52 to deposit the first metal layer 32 on the conductive layer 52.
  • the first plating process may be an electroless plating process.
  • a suitable catalyst layer may be provided on the conductive layer 52.
  • the conductive layer 52 may be configured to function as a catalyst layer. Even when the electrolytic plating process is performed, a catalyst layer may be provided on the conductive layer 52.
  • the components of the first plating solution used are appropriately determined according to the characteristics required for the first metal layer 32.
  • a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the first plating solution.
  • a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate can be used.
  • Various additives may be contained in the plating solution. Examples of the additive include a pH buffer such as boric acid, a primary brightener such as saccharin sodium, a secondary brightener such as butynediol, propargyl alcohol, coumarin, formalin, and thiourea, and an antioxidant.
  • FIG. 9B is a cross-sectional view illustrating the second resist pattern 55 formed on the base material 51. As shown in FIG. 9B, in the resist forming step, the first opening 30c of the first metal layer 32 is covered with the second resist pattern 55, and the gap 56 of the second resist pattern 55 is formed on the first metal layer 32. It is implemented to be located.
  • a negative type resist film is formed by attaching a dry film on the base material 51 and the first metal layer 32.
  • the dry film include those containing an acrylic photocurable resin, such as RY3310 manufactured by Hitachi Chemical.
  • a resist film may be formed by applying a material for the second resist pattern 55 on the base material 51 and thereafter performing baking as necessary.
  • an exposure mask that prevents light from passing through a region of the resist film that should become the gap 56 is prepared, and the exposure mask is disposed on the resist film. Thereafter, the exposure mask is sufficiently adhered to the resist film by vacuum adhesion.
  • a positive type resist film may be used. In this case, an exposure mask that allows light to pass through a region of the resist film to be removed is used as the exposure mask.
  • a heat treatment step of heating the second resist pattern 55 may be performed after the development step.
  • the second metal layer 37 is formed on the first metal layer 32.
  • the second metal layer 37 provided with the second opening 30d communicating with the first opening 30c is formed on the first metal layer 32.
  • the second plating solution is supplied to the gap 56 between the second resist patterns 55 to deposit the second metal layer 37 on the first metal layer 32.
  • the substrate 51 on which the first metal layer 32 is formed is immersed in a plating tank filled with a second plating solution. Thereby, as shown in FIG. 9C, a second metal layer 37 can be obtained on the first metal layer 32.
  • the thickness of the second metal layer 37 may be set so that the thickness T0 (see FIG. 6) of the plating layer 31 of the vapor deposition mask 20 in the effective region 22 is 2.0 ⁇ m or more and 50 ⁇ m or less.
  • the specific method of the second plating process is not particularly limited.
  • the second plating process may be performed as a so-called electrolytic plating process in which an electric current flows through the first metal layer 32 to deposit the second metal layer 37 on the first metal layer 32.
  • the second plating process may be an electroless plating process.
  • a suitable catalyst layer may be provided on the first metal layer 32.
  • a catalyst layer may be provided on the first metal layer 32.
  • the same plating solution as the above-described first plating solution may be used.
  • a plating solution different from the first plating solution may be used as the second plating solution.
  • the composition of the first plating solution and the composition of the second plating solution are the same, the composition of the metal forming the first metal layer 32 and the composition of the metal forming the second metal layer 37 are also the same.
  • FIG. 9C shows an example in which the second plating process is continued until the upper surface of the second resist pattern 55 and the upper surface of the second metal layer 37 match
  • the present invention is not limited to this. There is no.
  • the second plating process may be stopped in a state where the upper surface of the second metal layer 37 is located below the upper surface of the second resist pattern 55.
  • a removing step of removing the second resist pattern 55 is performed.
  • the removing step is performed by immersing the laminate of the pattern substrate 50, the first metal layer 32, the second metal layer 37, and the second resist pattern 55 in, for example, an alkaline stripping solution.
  • the second resist pattern 55 can be peeled from the pattern substrate 50, the first metal layer 32, and the second metal layer 37.
  • the mask 30 bonded to the base material 51 is obtained.
  • the second metal layer 37 having the second openings 30d in a predetermined pattern on the first metal layer 32 can be obtained.
  • first opening 30c and the second opening 30d communicate with each other, so that the first through-hole 35 penetrating the mask 30 is formed.
  • the plating layer 31 on the conductive layer 52 By depositing the plating layer 31 on the conductive layer 52 in this manner, a plurality of first through holes 35 are formed.
  • the support body 40 in which the second through-holes 45 are formed is prepared.
  • a resist film containing a photosensitive resist material is formed on the first surface 64a and the second surface 64b of the metal plate 64.
  • the resist film is exposed and developed.
  • the first resist pattern 65a can be formed on the first surface 64a of the metal plate 64
  • the second resist pattern 65b can be formed on the second surface 64b of the metal plate 64.
  • a first surface etching step of etching a region of the first surface 64a of the metal plate 64 that is not covered with the first resist pattern 65a using a first etchant is performed.
  • a large number of first concave portions 401 are formed on the first surface 64a of the metal plate 64.
  • the first etching solution for example, a solution containing a ferric chloride solution and hydrochloric acid is used.
  • a region of the second surface 64b of the metal plate 64 that is not covered by the second resist pattern 65b is etched to form a second concave portion 402 in the second surface 64b.
  • Perform an etching step The second surface etching step is performed until the first concave portion 401 and the second concave portion 402 communicate with each other, whereby the second through hole 45 is formed.
  • As the second etching solution a solution containing, for example, a ferric chloride solution and hydrochloric acid is used in the same manner as the first etching solution.
  • the first concave portion 401 may be covered with a resin 69 having resistance to the second etching solution.
  • the resin 69 is removed from the metal plate 64.
  • the resin 69 can be removed by using, for example, an alkaline stripper.
  • an alkaline stripping solution is used, the resist patterns 65a and 65b are removed simultaneously with the resin 69, as shown in FIG. 10D.
  • the resist patterns 65a and 65b may be removed separately from the resin 69 using a peeling liquid different from the peeling liquid for peeling the resin 69. Thereby, the support body 40 in which the second through holes 45 are formed can be obtained.
  • the thickness T1 (see FIG. 4) of such a support 40 can be set to 0.20 mm or more and 2.0 mm or less.
  • the thickness T1 of the support 40 is 0.20 mm or more, the rigidity of the deposition mask 20 can be improved. Thereby, it is possible to prevent the mask 30 from being wrinkled or deformed.
  • the thickness T1 of the support 40 is 2.0 mm or less, when the substrate 51 is peeled off from the mask 30 bonded to the support 40 as described later, a problem that the base 51 cannot be removed is suppressed. can do.
  • the support 40 includes a material having a rigidity of 50 GPa or more and 65 GPa or less.
  • the rigidity of the material of the support 40 is 50 GPa or more, the rigidity of the deposition mask 20 can be effectively improved. Thereby, it is possible to prevent the mask 30 from being wrinkled or deformed.
  • the rigidity of the material of the support 40 is 65 GPa or less, when the base 51 is peeled from the mask 30 bonded to the support 40, a problem that the base 51 cannot be peeled can be suppressed. .
  • an iron alloy such as an Invar material containing 34% by mass or more and 38% by mass or less of nickel or a super Invar material containing cobalt in addition to nickel is used. it can.
  • a bonding step of bonding the mask 30 and the support 40 is performed.
  • the support 40 and the mask 30 are joined so that the second through-hole 45 of the support 40 overlaps the first through-hole 35 of the mask 30 in plan view.
  • the mask 30 is disposed on the support 40.
  • the mask 30 is irradiated with laser light La from the base material 51 side through the base material 51 to irradiate a part of the second metal layer 37 and a part of the support body 40 with the laser light La.
  • the mask 30 and the support 40 are joined to each other by welding.
  • the laser beam La for example, a YAG laser beam generated by a YAG laser device can be used.
  • the YAG laser device for example, a device including a crystal obtained by adding Nd (neodymium) to YAG (yttrium aluminum garnet) as an oscillation medium can be used.
  • a first bonding portion 19a for bonding the mask 30 and the support 40 is formed, and the mask 30 bonded to the base material 51 and the support 40 bonded to the mask 30 are formed. Is obtained.
  • the present invention is not limited to this, and the mask 30 and the support 40 may be joined to each other by another fixing means such as an adhesive, or the mask 30 and the support 40 may be joined to each other by plating. May be.
  • a peeling step of peeling the substrate 51 from the mask 30 of the first intermediate member 70a is performed.
  • the vapor deposition mask 20 including the support 40 in which the through holes 45 are formed can be obtained.
  • the thickness T1 of the support 40 may be 2.0 mm or less.
  • the base material 51 when peeling the base material 51 from the mask 30, the base material 51 is peeled while elastically deforming the support body 40 so that wrinkles and plastic deformation do not occur in the mask 30.
  • the thickness T1 of the support 40 if the thickness T1 of the support 40 is too large, the rigidity of the support 40 becomes too large, and it may be difficult to elastically deform the support 40.
  • the thickness T1 of the support 40 by setting the thickness T1 of the support 40 to 2.0 mm or less, it is possible to prevent the rigidity of the support 40 from becoming too large, and to elastically deform the support 40. For this reason, when peeling the substrate 51 from the mask 30 of the first intermediate member 70a, it is possible to suppress a problem that the substrate 51 cannot be peeled.
  • the vapor deposition mask 20 is manufactured by the method shown in FIGS.
  • the deposition mask 20 is joined to the frame 15.
  • the frame 15 and the support 40 are joined so that the opening 15a of the frame 15 overlaps the second through hole 45 of the support 40 in plan view.
  • the deposition mask 20 is arranged on the frame 15 so that the support 40 and the frame 15 are in contact with each other.
  • the support 40 is irradiated with laser light La, and a part of the support 40 and a part of the frame 15 are melted by heat generated by the irradiation of the laser light La.
  • the support body 40 and the frame 15 are joined to each other by welding.
  • the support 40 and the frame 15 are pulled in a state where the vapor deposition mask 20 is pulled in the surface direction. May be joined to each other.
  • a second joining portion 19b for joining the support 40 and the frame 15 is formed, and is joined to the deposition mask 20 and the support 40 of the deposition mask 20, and the second joining portion 19b is seen in plan view.
  • the vapor deposition mask device 10 including the frame 15 provided with the opening 15a overlapping the through hole 45 is obtained.
  • the present invention is not limited thereto, and the support 40 and the frame 15 may be joined to each other by another fixing means such as an adhesive.
  • the vapor deposition mask device 10 obtained by the above-described steps is prepared.
  • the crucible 94 and the heater 96 containing the deposition material 98 are prepared, and the deposition device 90 is prepared.
  • the organic EL substrate 92 is set on the mask 30 of the vapor deposition mask device 10. At this time, for example, an alignment mark (not shown) of the organic EL substrate 92 and an alignment mark (not shown) of the vapor deposition mask 20 are directly observed, and the organic EL substrate 92 is positioned so that the alignment marks overlap each other. 92 is set in the vapor deposition mask device 10.
  • a vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 provided on the mask 30 of the vapor deposition mask device 10.
  • a magnet 93 is arranged on the surface of the organic EL substrate 92 on the side opposite to the vapor deposition mask device 10.
  • the mask 30 can be brought into close contact with the organic EL substrate 92 by attracting the vapor deposition mask device 10 toward the magnet 93 by magnetic force.
  • the inside of the vapor deposition device 90 is evacuated by a not-shown exhaust unit so that the inside of the vapor deposition device 90 is in a high vacuum state.
  • the heater 96 heats the crucible 94 to evaporate the vapor deposition material 98. Then, the vapor deposition material 98 that has evaporated from the crucible 94 and has reached the vapor deposition mask device 10 adheres to the organic EL substrate 92 through the second through hole 45 of the support 40 and the first through hole 35 of the mask 30 (FIG. 1).
  • the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 in a desired pattern corresponding to the position of the first through hole 35 of the mask 30.
  • the deposition mask 20 is joined to the mask 30 having the plating layer 31 in which the first through-hole 35 is formed, and the second through-hole that is joined to the mask 30 and overlaps the first through-hole 35 in plan view.
  • a support having a hole formed therein, and the thickness of the support is not less than 0.20 mm and not more than 2.0 mm.
  • the thickness T1 of the support 40 is 0.20 mm or more, the rigidity of the deposition mask 20 can be improved. Thereby, it is possible to prevent the mask 30 from being wrinkled or deformed.
  • the thickness T1 of the support 40 is 2.0 mm or less, when the substrate 51 is peeled from the mask 30 bonded to the support 40, it is possible to suppress a problem that the substrate 51 cannot be peeled. .
  • support 40 includes a material having a rigidity of 50 GPa or more and 65 GPa or less.
  • the rigidity of the material of the support 40 is 50 GPa or more, the rigidity of the deposition mask 20 can be effectively improved. Thereby, it is possible to prevent the mask 30 from being wrinkled or deformed.
  • the rigidity of the material of the support 40 is 65 GPa or less, when the base 51 is peeled from the mask 30 bonded to the support 40, a problem that the base 51 cannot be peeled can be suppressed. .
  • the evaporation mask 20 uses a single mask 30 having a plurality of effective regions 22.
  • the present invention is not limited to this.
  • a vapor deposition mask 20 in which a plurality of masks 30 are allocated to the frame 15 may be used.
  • illustration of the second through-hole 45 of the support 40 is omitted for clarity of the drawing.
  • the plating layer 31 of the mask 30 includes the first metal layer 32 and the second metal layer 37 provided on the first metal layer 32, and is formed in a two-layer structure. Examples have been described. However, the present invention is not limited to this, and the plating layer 31 may be formed in a one-layer structure without forming the second metal layer 37 on the first metal layer 32.
  • the support 40 may have a plurality of layers joined to each other.
  • the support 40 may include a first layer 40a joined to the mask 30 and a second layer 40b joined to the first layer 40a.
  • the second through-hole 45 of the support 40 may penetrate the first layer 40a and the second layer 40b.
  • the first layer 40a of the support 40 may be provided with a first opening 40c in a predetermined pattern
  • the second layer 40b may have a second opening 40d communicating with the first opening 40c. It may be provided.
  • the first opening 40c and the second opening 40d communicate with each other, so that a second through hole 45 penetrating the first layer 40a and the second layer 40b of the support 40 may be defined.
  • the support 40 has the first layer 40a and the second layer 40b, the support 40 having a desired thickness T1 can be easily obtained. That is, when forming the second through-hole 45 of the support body 40, as described above, the metal plate is patterned by the photolithography method including the exposure step and the development step. At this time, if the thickness of the metal plate is large, it may be difficult to pattern the metal plate into a desired pattern.
  • the support 40 since the support 40 has the first layer 40a and the second layer 40b, the first opening of the first layer 40a can be formed before the first layer 40a and the second layer 40b are joined. 40c and the second opening 40d of the second layer 40b can be respectively formed. Then, the first through-hole 45 is formed by joining the first layer 40a in which the first opening 40c is formed and the second layer 40b in which the second opening 40d is formed, and has a sufficient thickness.
  • the support 40 having T1 can be easily obtained.
  • the first layer 40a and the second layer 40b may be joined to each other by an adhesive, a brazing material, or welding.
  • joint portions (not shown) may be arranged in a direction parallel to the direction in which the outer edge 40e of the support 40 extends.
  • the joint surface 47a between the first layer 40a and the second layer 40b is covered with the metal 48 from the side (that is, the left and right direction shown in FIG. 16).
  • the metal 48 may be formed by, for example, welding, by building up so as to cover the joining surface 47a from the side, and by plating, the metal is deposited so as to cover the joining surface 47a from the side.
  • the vapor deposition mask 20 of the vapor deposition mask device 10 may be used repeatedly. In this case, each time the evaporation mask 20 is used, the evaporation mask 20 is washed, and the evaporation material 98 attached to the evaporation mask 20 is removed. On the other hand, when the bonding surface 47a of the first layer 40a and the second layer 40b is exposed, when cleaning the vapor deposition mask 20, the vapor deposition material 98 is filled in the gap between the first layer 40a and the second layer 40b. There is a possibility that a cleaning liquid for cleaning may enter.
  • the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 using the vapor deposition mask 20 in which the cleaning liquid has entered the gap between the first layer 40a and the second layer 40b, the first layer 40a and the second layer 40b There is a possibility that the cleaning liquid that has entered the gap between the substrate and the substrate may adhere to the organic EL substrate 92. In this case, various problems may occur in the organic EL substrate 92, such as a failure to obtain a desired contrast.
  • the joint surface 47a between the first layer 40a and the second layer 40b is covered with the metal 48 from the side. Therefore, it is possible to suppress a problem that the cleaning liquid enters the gap between the first layer 40a and the second layer 40b.
  • a first layer 40a to be joined to the mask 30 and a second layer 40b to be joined to the first layer 40a are prepared.
  • a metal plate is prepared, and the metal plate is patterned by a photolithography method including an exposure step and a development step.
  • a first opening 40c is formed in the first layer 40a
  • a second opening 40d is formed in the second layer 40b.
  • the first layer 40a and the second layer 40b are joined to each other.
  • the first layer 40a and the second layer 40b are joined to each other by an adhesive, a brazing material, or welding.
  • the first layer 40a and the second layer 40b are overlapped, and the above-described laser is applied to the first layer 40a or the second layer 40b.
  • the first layer 40a and the second layer 40b are melted by heat generated by the irradiation of the laser light La, and the first layer 40a and the second layer 40b are welded. Join each other.
  • the joining surface 47a between the first layer 40a and the second layer 40b is covered with the metal 48.
  • the metal 48 may be overlaid so as to cover the joining surface 47a from the side (that is, the left-right direction shown in FIG. 17C) by, for example, welding, and the plating surface may cover the joining surface 47a from the side.
  • the metal 48 may be formed by precipitating a metal. Thus, the support 40 is obtained.
  • each of the layers 40a and 40b may be completely covered from the side (that is, the left and right direction shown in FIG. 18A) by the metal 48.
  • the lower surface may be covered with metal 48.
  • the support 40 may have three or more layers.
  • the support 40 may further include a third layer 40f joined to the second layer 40b.
  • the second layer 40b and the third layer 40f may be joined to each other by an adhesive, a brazing material, or welding.
  • the second through-hole 45 of the support 40 may penetrate the layers 40a, 40b, 40f. That is, the third layer 40f of the support 40 may be provided with a third opening 40g communicating with the second opening 40d of the second layer 40b.
  • the first opening 40c, the second opening 40d, and the third opening 40g communicate with each other, so that the second penetrating through the first layer 40a, the second layer 40b, and the third layer 40f of the support 40 is performed.
  • a hole 45 may be defined.
  • the joining surface 47a between the first layer 40a and the second layer 40b is covered with the metal 48 from the side (that is, the left-right direction shown in FIG. 18B).
  • the joining surface 47b between the second layer 40b and the third layer 40f is covered with the metal 48 from the side (that is, the left-right direction shown in FIG. 18B).
  • the metal 48 may be formed by building up the joint surface 47a and the joint surface 47b so as to cover the joint surface 47a and the joint surface 47b from the side, for example, by welding, and by plating the joint surface 47a and the joint surface 47b. It may be formed by depositing a metal so as to cover from the side.
  • a third layer 40f to be joined to the second layer 40b is further prepared.
  • a metal plate is prepared, and the metal plate is patterned by a photolithography method including an exposure step and a development step.
  • a third opening 40g is formed in the third layer 40f.
  • the second layer 40b joined to the first layer 40a and the third layer 40f are joined to each other.
  • the second layer 40b and the third layer 40f are joined to each other by an adhesive, a brazing material, or welding.
  • the second layer 40b and the third layer 40f are overlapped, and the third layer 40f is irradiated with the above-described laser beam La.
  • a part of the third layer 40f and a part of the second layer 40b are melted by heat generated by the irradiation of the laser beam La, and the second layer 40b and the third layer 40f are joined to each other by welding.
  • the joining surface 47a between the first layer 40a and the second layer 40b is covered with the metal 48.
  • the joining surface 47b between the second layer 40b and the third layer 40f is covered with the metal 48.
  • the metal 48 may be overlaid so as to cover the joining surfaces 47a and 47b from the side (that is, the left-right direction shown in FIG. 18E) by, for example, welding, and the joining surfaces 47a and 47b may be plated by plating.
  • the metal 48 may be formed by depositing a metal so as to cover it from the other side. Thus, the support 40 is obtained.
  • each of the layers 40a, 40b, and 40f may be completely covered from the side (that is, the left and right direction shown in FIG. 18C) by the metal 48.
  • the lower surface of 40f may be covered with metal 48.
  • the second through-hole 45 of the support 40 has a dimension larger than the effective area 22 of the mask 30 in a plan view.
  • the present invention is not limited to this, and the second through-hole 45 may have a dimension smaller than the effective area 22 in a plan view.
  • a part of the plurality of effective regions 22 may be covered with the support region 46.
  • the plating layer 31 is formed by depositing the plating layer 31 on the conductive layer 52 .
  • the present invention is not limited to this, and the plating layer 31 may be directly deposited on the base material 51.
  • a base material 51 made of a conductive material, for example, stainless steel or brass steel is prepared.
  • a first resist pattern 53 having a predetermined pattern is formed on a conductive base material 51.
  • the first plating solution is supplied onto the base material 51 on which the first resist pattern 53 has been formed, and the plating layer 31 is deposited on the base material 51.
  • FIG. 19C by removing the first resist pattern 53, the plating layer 31 can be deposited on the base material 51.
  • the plating layer 31 may include a second metal layer 37 provided on the first metal layer 32 and may have a two-layer structure.

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PCT/JP2019/031281 2018-08-10 2019-08-07 蒸着マスク、蒸着マスク装置、蒸着マスクの製造方法、蒸着マスク装置の製造方法及び蒸着方法 WO2020032149A1 (ja)

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JP2021175824A (ja) * 2020-03-13 2021-11-04 大日本印刷株式会社 有機デバイスの製造装置の蒸着室の評価方法、評価方法で用いられる標準マスク装置及び標準基板、標準マスク装置の製造方法、評価方法で評価された蒸着室を備える有機デバイスの製造装置、評価方法で評価された蒸着室において形成された蒸着層を備える有機デバイス、並びに有機デバイスの製造装置の蒸着室のメンテナンス方法
JP2021155763A (ja) * 2020-03-25 2021-10-07 株式会社ジャパンディスプレイ 蒸着マスクの製造方法

Citations (2)

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WO2016111214A1 (ja) * 2015-01-05 2016-07-14 シャープ株式会社 蒸着マスク、蒸着装置、および蒸着マスクの製造方法
WO2018110253A1 (ja) * 2016-12-14 2018-06-21 大日本印刷株式会社 蒸着マスク装置及び蒸着マスク装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005042147A (ja) * 2003-07-25 2005-02-17 Dainippon Screen Mfg Co Ltd 蒸着用マスクの製造方法および蒸着用マスク
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JP4847081B2 (ja) * 2005-09-20 2011-12-28 九州日立マクセル株式会社 メタルマスクおよびその製造方法
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JP6341434B2 (ja) * 2016-03-29 2018-06-13 株式会社ブイ・テクノロジー 成膜マスク、その製造方法及び成膜マスクのリペア方法
JP6722512B2 (ja) * 2016-05-23 2020-07-15 マクセルホールディングス株式会社 蒸着マスクおよびその製造方法
TWI773911B (zh) * 2018-08-10 2022-08-11 日商大日本印刷股份有限公司 蒸鍍罩、蒸鍍罩裝置、蒸鍍罩之製造方法、蒸鍍罩裝置之製造方法及蒸鍍方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016111214A1 (ja) * 2015-01-05 2016-07-14 シャープ株式会社 蒸着マスク、蒸着装置、および蒸着マスクの製造方法
WO2018110253A1 (ja) * 2016-12-14 2018-06-21 大日本印刷株式会社 蒸着マスク装置及び蒸着マスク装置の製造方法

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