WO2018129970A1 - 感光触控基板及其制备方法、显示装置 - Google Patents

感光触控基板及其制备方法、显示装置 Download PDF

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Publication number
WO2018129970A1
WO2018129970A1 PCT/CN2017/106342 CN2017106342W WO2018129970A1 WO 2018129970 A1 WO2018129970 A1 WO 2018129970A1 CN 2017106342 W CN2017106342 W CN 2017106342W WO 2018129970 A1 WO2018129970 A1 WO 2018129970A1
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Prior art keywords
electrode
photosensitive
layer
light emitting
forming
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PCT/CN2017/106342
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English (en)
French (fr)
Inventor
李昌峰
王海生
刘英明
丁小梁
许睿
赵利军
卢鹏程
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京东方科技集团股份有限公司
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Priority to US15/780,274 priority Critical patent/US20210167134A1/en
Publication of WO2018129970A1 publication Critical patent/WO2018129970A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G06F3/0421—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by interrupting or reflecting a light beam, e.g. optical touch-screen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention belongs to the field of display technologies, and in particular, to a photosensitive touch substrate, a preparation method thereof, and a display device.
  • Touch screens have become the main human-computer interaction means for personal mobile communication devices and integrated information terminals, such as tablet computers, smart phones, and super-notebook computers, due to their advantages of ease of operation, intuitiveness and flexibility.
  • OLED Organic Light Emitting Diode
  • LCD liquid crystal displays
  • OLEDs have the advantages of low energy consumption, low production cost, white light emission, wide viewing angle and fast response.
  • OLED has begun to replace the traditional liquid crystal display.
  • the inventors have found that in the prior art, in the manufacturing of the touch function in the OLED display, the structure of the OLED display device is usually first produced, and then the touch function device (for example, the photosensitive device) is prepared, and the process steps are complicated. Therefore, providing a method for preparing a photosensitive touch substrate with a simple process step is a technical problem to be solved.
  • the embodiment of the invention aims to at least solve one of the technical problems existing in the prior art, and provides a method for preparing a photosensitive touch substrate with a simple preparation process, a photosensitive touch substrate and a display device.
  • Embodiments of the present invention provide a method for fabricating a photosensitive touch substrate, comprising: forming a first electrode, a luminescent material layer, and a second electrode of a light emitting device on a substrate; forming a first electrode of the photosensitive device on the substrate, Photosensitive functional layer, second electrode; said photosensitive device One of the first electrode and the second electrode and the first electrode of the light emitting device are formed using a single mask.
  • the first electrode of the photosensitive device and the first electrode of the light emitting device are formed by using a single mask; the second electrode of the photosensitive device and the second electrode of the light emitting device are formed by using a single mask.
  • the method further comprises:
  • a first electrode of the device is directly connected to a drain of the driving transistor through the first via; a first electrode of the photosensitive device is directly connected to a source of the read transistor through the second via.
  • the steps of forming the light emitting device and the photosensitive device include:
  • a pattern of a second electrode including the light emitting device and a second electrode of the photosensitive device located in the second receiving groove is formed by one mask.
  • the second electrode of the photosensitive device and the first electrode of the light emitting device are formed by using a single mask; before the forming the light emitting device and the photosensitive device on the substrate, the method further comprises:
  • connection electrode passes the first electrode of the light emitting device and the driving through the first via hole a drain of the transistor is connected; a first electrode of the photosensitive device is directly connected to a source of the read transistor through the second via.
  • a read signal line is further formed while forming the connection electrode and the first electrode of the photosensitive device; and the read signal line is connected to a drain of the read transistor through the third via.
  • the step of forming the photosensitive functional layer and the second electrode of the light emitting device and the photosensitive device specifically includes:
  • a pattern including the second electrode of the light emitting device is formed by one mask.
  • the step of forming the photosensitive functional layer comprises:
  • N-type a-Si layer, an intrinsic type a-Si layer, and a P-type a-Si layer are sequentially deposited in a direction away from the substrate, through a mask at a position corresponding to the first electrode of the photosensitive device A pattern including a photosensitive functional layer is formed.
  • the embodiment of the invention provides a photosensitive touch substrate, comprising: a substrate, a light emitting device and a photosensitive device disposed on the substrate; wherein the light emitting device comprises a first electrode, a luminescent material layer, and a layer, which are sequentially disposed on the substrate a second electrode; the photosensitive device comprising a first electrode, a photosensitive functional layer, and a second electrode sequentially disposed on the substrate; one of the first electrode and the second electrode of the photosensitive device and the first of the light emitting device
  • the electrodes are arranged in the same layer and the materials are the same.
  • the first electrode of the photosensitive device is disposed in the same layer and the same material as the first electrode of the light emitting device; the second electrode of the photosensitive device and the first electrode of the light emitting device The two electrodes are arranged in the same layer and the materials are the same.
  • the photosensitive touch substrate further includes: a driving transistor and a read transistor disposed on the substrate;
  • a planarization layer disposed on the layer of the driving transistor and the read transistor, and a first via hole disposed at a position corresponding to a drain of the driving transistor and the driving transistor a second via is disposed at a position corresponding to a source of the transistor; a first electrode of the light emitting device is directly connected to a drain of the driving transistor through the first via; a first electrode of the photosensitive device passes The second via is directly connected to the read transistor.
  • the second electrode of the photosensitive device is disposed in the same layer and the same material as the first electrode of the light emitting device; the photosensitive touch substrate further includes:
  • a planarization layer disposed on the layer of the driving transistor and the read transistor, and a first via hole disposed at a position corresponding to a drain of the driving transistor and the driving transistor a second via is disposed at a position corresponding to a source of the transistor;
  • connection electrode of the first via covers the second via; wherein the connection electrode passes the first electrode of the light emitting device through the first via a drain of the driving transistor is connected; a first electrode of the photosensitive device is directly connected to a source of the read transistor through the second via.
  • a third via hole is disposed in the planarization layer at a position corresponding to a drain of the read transistor
  • the third via is covered with a read signal line; the read signal line is connected to the drain of the read transistor through the third via.
  • the photosensitive functional layer comprises: an N-type a-Si layer, an intrinsic a-Si layer, and a P-type a-Si layer disposed in sequence along the direction away from the substrate.
  • Embodiments of the present invention provide a display device including the above-described photosensitive touch substrate.
  • one of the first electrode and the second electrode of the photosensitive device is formed by using a mask with the first electrode of the light emitting device, thereby simplifying the photosensitive touch.
  • the preparation process of the substrate improves the production efficiency.
  • FIG. 1 is a flow chart of a method for fabricating a photosensitive touch substrate according to a first alternative implementation of the embodiment of the present invention
  • FIG. 2 is a schematic diagram showing the structure formed by step 101 in the method for fabricating the photosensitive touch substrate according to the first and second alternative implementations of the embodiment of the present invention
  • FIG. 3 is a schematic diagram of a structure formed by step 102 in a method for fabricating a photosensitive touch substrate according to a first alternative implementation manner of the embodiment of the present invention
  • FIG. 4 is a schematic diagram of a structure formed by step 103 in a method for fabricating a photosensitive touch substrate according to a first alternative implementation manner of the embodiment of the present invention
  • FIG. 5 is a schematic diagram of a structure formed by step 104 in a method for fabricating a photosensitive touch substrate according to a first alternative implementation of the embodiment of the present invention
  • FIG. 6 is a schematic diagram of a structure formed by step 105 in a method for fabricating a photosensitive touch substrate according to a first alternative implementation manner of the embodiment of the present invention
  • step 106 is a schematic diagram of a structure formed by step 106 in a method for fabricating a photosensitive touch substrate according to a first alternative implementation of the embodiment of the present invention
  • FIG. 8 is a schematic diagram of a structure formed by step 107 in a method for fabricating a photosensitive touch substrate according to a first alternative implementation of the embodiment of the present invention
  • FIG. 9 is a flowchart of a method for preparing a photosensitive touch substrate according to a second alternative implementation manner of the embodiment of the present invention.
  • FIG. 10 is a schematic diagram of a structure formed by step 202 in a method for fabricating a photosensitive touch substrate according to a second alternative implementation manner of the embodiment of the present invention
  • FIG. 11 is a schematic diagram of a structure formed by step 203 in a method for fabricating a photosensitive touch substrate according to a second alternative implementation manner of the embodiment of the present invention
  • FIG. 12 is a schematic diagram of a structure formed by step 204 in a method for fabricating a photosensitive touch substrate according to a second alternative implementation manner of the embodiment of the present invention
  • FIG. 13 is a schematic diagram of a structure formed by step 205 in a method for fabricating a photosensitive touch substrate according to a second alternative implementation manner of the embodiment of the present invention
  • FIG. 14 is a schematic diagram of a structure formed by step 206 in a method for fabricating a photosensitive touch substrate according to a second alternative implementation of the embodiment of the present invention.
  • step 207 is a schematic diagram of a structure formed by step 207 in a method for fabricating a photosensitive touch substrate according to a second alternative implementation manner of the embodiment of the present invention.
  • 16 is a schematic diagram of a structure formed by step 208 in a method for fabricating a photosensitive touch substrate according to a second alternative implementation of the embodiment of the present invention
  • 17 is a schematic diagram of a structure formed by step 209 in a method for fabricating a photosensitive touch substrate according to a second alternative implementation of the embodiment of the present invention.
  • FIG. 18 is a schematic diagram showing the working principle of a touch photosensitive panel according to an embodiment of the invention.
  • Embodiments of the present invention provide a method of fabricating a photosensitive touch substrate, including the steps of forming a light emitting device and a light sensing device on a substrate.
  • the step of forming the light emitting device comprises the steps of sequentially forming the first electrode, the luminescent material layer and the second electrode of the light emitting device on the substrate.
  • the step of forming the photosensitive device includes the steps of sequentially forming a first electrode, a photosensitive functional layer, and a second electrode on the substrate.
  • the first electrode of the photosensitive device and one of the first electrode and the second electrode of the light emitting device are formed using a single mask.
  • one of the first electrode and the second electrode of the photosensitive device is formed by using one mask with the first electrode of the light emitting device, so that the photosensitive touch substrate can be simplified.
  • the preparation process improves production efficiency.
  • patterning process refers to the use of lithographic techniques for materials
  • primary mask refers to a patterning process that forms a desired pattern using only one mask, after one exposure and etching.
  • the light emitting device in this embodiment is an organic electroluminescent device, that is, an OLED device.
  • the first electrode of the light emitting device is the anode of the OLED device and the second electrode of the light emitting device is the cathode of the OLED device.
  • this does not constitute a limitation of the light emitting device in the embodiment, and other light emitting devices are also possible.
  • each touch unit in the photosensitive touch substrate is composed of a photosensitive device and a read transistor;
  • the pixel circuit for driving the OLED device to emit light includes a driving transistor and a switching transistor;
  • the light emitting device is an OLED device, and the first electrode of the light emitting device
  • the second electrode of the light emitting device is a cathode of the OLED device as an example.
  • the patterning process may include only a photolithography process, or may include a photolithography process and an etching step, and may also include other processes for forming a predetermined pattern, such as printing, inkjet, and the like.
  • the photolithography process refers to a process of forming a pattern by using a photoresist, a mask, an exposure machine, or the like including a process of film formation, exposure, development, and the like.
  • the formation of a film is usually carried out in various ways such as deposition, coating, sputtering, and the like.
  • a photosensitive device refers to a device such as a photodiode capable of converting light intensity into an electrical signal. Therefore, in the photosensitive touch substrate shown in FIG. 8 or FIG. 14 of the present disclosure, the first electrode 61 and the second electrode 63 of the photosensitive device 6 may be the anode and the cathode of the photodiode, respectively. Alternatively, the first electrode 61 and the second electrode 63 of the photosensitive device 6 may also be the cathode and the anode of the photodiode, respectively.
  • the first electrode 61 of the photosensitive device 6 and the anode 51 of the OLED device are formed using a single mask.
  • the method for preparing the photosensitive touch substrate specifically includes the following steps.
  • Step 101 on the substrate 10, for example, by a patterning process, forming a layer structure including a driving transistor 2 for driving the OLED device 5 to emit light, a switching transistor 1, and a read transistor 3 in the touch unit, as shown in FIG. Show.
  • the step may be: gate/gate line ⁇ gate insulating layer ⁇ active layer ⁇ source Pole/drain.
  • Step 102 on the substrate 10 on which the step 101 is completed, coating to form the planarization layer 4.
  • Forming, by an etching process, a first via hole 41 at a position corresponding to a drain of the driving transistor 2, and forming a second via hole 42 at a position corresponding to a source of the read transistor 3, as shown in FIG. 3 is shown.
  • Step 103 on the substrate 10 on which the step 102 is completed, a pattern including the anode 51 (first electrode) of the OLED device and the first electrode 61 of the photosensitive device 6 is formed by one mask.
  • the anode 51 of the OLED device is directly connected to the drain of the driving transistor 2 through the first via 41.
  • the first electrode 61 of the photosensitive device 6 is directly connected to the source of the read transistor 3 through the second via 42 as shown in FIG.
  • Step 104 on the substrate 10 on which the step 103 is completed, the photosensitive functional layer 62 of the photosensitive device 6 is formed as shown in FIG.
  • the step may specifically include sequentially depositing an N-type a-Si layer 621, an intrinsic type a-Si layer 622, a P-type a-Si layer 623, and an auxiliary layer 624 in a direction away from the substrate 10.
  • a pattern including the photosensitive functional layer 62 is formed at a position corresponding to the first electrode 61 of the photosensitive device 6 by a single mask.
  • the auxiliary layer 624 ITO cap layer
  • the auxiliary layer 624 is formed because the via hole 72 formed on the top of the auxiliary layer 624 is small, and the auxiliary layer 624 can better capture charges. If the size of the via 72 formed on top of the auxiliary layer 624 is sufficiently large, the auxiliary layer 624 may not be formed.
  • Step 105 on the substrate 10 on which the step 104 is completed, the pixel defining layer 7 is formed, and the first receiving groove 71 is formed at a position corresponding to the first electrode 51 of the light emitting device.
  • a second receiving groove 72 is formed at a position corresponding to the photosensitive functional layer 62 of the photosensitive member 6, as shown in FIG.
  • Step 106 on the substrate 10 completing the step 105, forming a luminescent material layer 52 of the OLED device in the first receiving groove 71, as shown in FIG.
  • the manner in which the luminescent material layer 52 is formed is the manner of inkjet printing.
  • the luminescent layer formed at this time is only in the first accommodating groove 71, and there is no luminescent material layer 52 on the photosensitive device 6. At this time, the flux of light incident on the photosensitive device 6 can be increased, thereby improving optical touch precision.
  • the luminescent material layer 52 of the OLED device 5 can also be formed by evaporation.
  • Step 107 on the substrate 10 completing the step 106, forming a pattern of the cathode 53 (second electrode) including the OLED device and the second electrode 63 of the photosensitive device 6 located in the second receiving groove 72 by one mask, as shown in the figure 8 is shown.
  • the cathode 53 of the OLED device and the second electrode 63 of the photosensitive device can also be formed by two patterning processes.
  • the method may further include the step of forming an encapsulation layer on the layer of the cathode 53 of the OLED device and the second electrode 63 of the photosensitive device 6.
  • the embodiment provides a photosensitive touch substrate prepared by the above preparation method.
  • the “same layer setting” is not the same layer in the macroscopic aspect, but refers to the pattern formed in one mask.
  • the photosensitive touch substrate includes: a substrate 10 , a switching transistor 1 , a driving transistor 2 , a read transistor 3 disposed on the substrate 10 , and a switching transistor 1 , a driving transistor 2 , and a read transistor 3 can be prepared at the same time. That is, the gate (gate) of the switching transistor 1 is disposed in the same layer and the same material as the gate (gate) of the driving transistor 2 and the gate (gate) of the read transistor 3, and the source and drain of the three are the same. Very close to the same layer and the same material.
  • the photosensitive touch substrate further includes: a planarization layer 4 disposed on a layer of the switching transistor 1, the driving transistor 2, and the read transistor 3, and the planarization layer 4 and the driving transistor
  • a second via hole 41 is disposed at a position corresponding to the second electrode 63
  • a second via hole 42 is disposed at a position corresponding to the source of the read transistor 3
  • a light is disposed at a position corresponding to the first via hole 41.
  • the first electrode 51 of the device is provided with a first electrode 61 of the photosensitive device 6 at a position corresponding to the second via hole 42.
  • the photosensitive functional layer 62 is provided on the first electrode 61 of the photosensitive device 6.
  • the photosensitive functional layer 62 includes an N-type a-Si layer 621, an intrinsic type a-Si layer 622, a P-type a-Si layer 623, and an auxiliary layer 624 which are sequentially disposed in a direction away from the substrate 10.
  • a pixel defining layer 7 is disposed on the layer where the photosensitive functional layer 62 is located, and a first receiving groove 71 is disposed at a position corresponding to the first defining electrode 7 of the light emitting device, corresponding to the photosensitive functional layer 62 of the photosensitive device 6.
  • the position of the second receiving groove 72 is set.
  • a luminescent material layer 52 is provided in the first accommodating groove 71.
  • a second electrode 53 of the light emitting device and a second electrode 63 of the photosensitive device 6 located in the second receiving groove 72 are disposed on the substrate 10 on which the luminescent material layer 52 is disposed.
  • the second electrode 63 covers the luminescent material layer 52 and is disposed in the same layer as the second electrode 63 of the photosensitive device 6 and has the same material.
  • the photosensitive touch substrate may further include other structures such as an encapsulation layer covering the second electrode 53 of the light emitting device and the second electrode 63 of the photosensor, and will not be enumerated here.
  • the second electrode 63 of the photosensitive device 6 is The first electrode 51 of the light emitting device is formed using a single mask.
  • the method for preparing the photosensitive touch substrate specifically includes the following steps:
  • Step 201 on the substrate 10, for example, by a patterning process, forming a layer structure including a driving transistor 2 for driving the OLED device 5 to emit light, a switching transistor 1, and a read transistor 3 in the touch unit, as shown in FIG. Show.
  • the step may be: gate/gate line ⁇ gate insulating layer ⁇ active layer ⁇ source Pole/drain.
  • Step 202 On the substrate 10 completing step 201, a planarization layer 4 is formed, and a first via hole 41 is formed by etching at a position corresponding to the second electrode 63 of the driving transistor 2. A second via hole 42 is formed at a position corresponding to the source of the read transistor 3, and a third via hole 43 is formed at a position corresponding to the drain of the read transistor 3, as shown in FIG.
  • Step 203 on the substrate 10 on which the step 202 is completed, a pattern including the connection electrode 8, the first electrode of the photosensitive device 6, and the read signal line 9 is formed by, for example, a patterning process, as shown in FIG.
  • the connection electrode 8 connects the anode 51 of the OLED device to the drain of the driving transistor 2 through the first via 41.
  • the first electrode 61 of the photosensitive device 6 is directly connected to the read transistor 3 through the second via 42.
  • the read signal line 9 is connected to the drain of the read transistor 3 through the third via 43.
  • the material of the connection electrode 8, the first electrode of the photosensitive device 6, and the read signal line 9 is a metal material.
  • Step 204 on the substrate 10 on which the step 203 is completed, the photosensitive functional layer 62 of the photosensitive device 6 is formed as shown in FIG.
  • the step may specifically include sequentially depositing an N-type a-Si layer 621, an intrinsic type a-Si layer 622, a P-type a-Si layer 623, and an auxiliary layer 624 in a direction away from the substrate 10, by masking once.
  • the mold forms a pattern including the photosensitive functional layer 62 at a position corresponding to the first electrode 61 of the photosensitive device 6. It should be noted here that the auxiliary layer 624 is formed because the fifth via hole 112 formed later is smaller, and the auxiliary layer 624 can better capture the charge. If the fifth via 112 is sufficiently large in size, the auxiliary layer 624 may not be formed.
  • Step 205 on the substrate 10 on which the step 204 is completed, the interlayer insulating layer 11 is formed, and a fourth via hole 111 is formed at a position corresponding to the connection electrode 8.
  • a fifth via 112 is formed at a position corresponding to the photosensitive functional layer 62 of the photosensitive device 6, as shown in FIG.
  • Step 206 on the substrate 10 of step 205, forming an anode 51 including the OLED device in the fourth via 111 and a sense of being located in the fifth via 112 through a mask.
  • the pattern of the second electrode 63 of the optical device 6 is as shown in FIG.
  • Step 207 on the substrate 10 on which the step 206 is completed, the pixel defining layer 7 is formed, and a first receiving groove 71 is formed at a position corresponding to the first electrode 51 of the light emitting device, as shown in FIG.
  • Step 208 on the substrate 10 on which the step 207 is completed, the luminescent material layer 52 of the OLED device 5 is formed in the first accommodating groove 71, as shown in FIG.
  • the manner in which the luminescent material layer 52 of the OLED device 5 is formed is vapor deposition, and of course, inkjet printing can also be employed.
  • Step 209 on the substrate 10 completing step 208, a pattern including the cathode 53 of the OLED device is formed by, for example, a patterning process, as shown in FIG.
  • the method for preparing the photosensitive touch substrate may further include the step of forming an encapsulation layer on the layer of the cathode 53 of the OLED device and the second electrode 63 of the photosensitive device 6.
  • the embodiment of the invention provides a photosensitive touch substrate prepared by the above preparation method.
  • the photosensitive touch substrate includes: a substrate 10, a switching transistor 1, a driving transistor 2, a reading transistor 3 disposed on the substrate 10, and a switching transistor 1, a driving transistor 2, and a reading transistor 3 can be prepared simultaneously; that is, the gate (gate) of the switching transistor 1 is disposed in the same layer and the same material as the gate (gate) of the driving transistor 2 and the gate (gate) of the read transistor 3, The source and drain of the device are set in the same layer and the materials are the same.
  • the photosensitive touch substrate further includes: a planarization layer 4 disposed on a layer of the switching transistor 1, the driving transistor 2, and the read transistor 3, and the planarization layer 4 and the driving transistor
  • a second via hole 41 is disposed at a position corresponding to the second electrode 63 of the second electrode
  • a second via hole 42 is disposed at a position corresponding to the source of the read transistor 3 at a drain of the read transistor 3
  • a corresponding via hole 43 is provided at the corresponding position.
  • the connection electrode 8 is provided at a position corresponding to the first via hole 41
  • the first electrode 61 of the photosensitive device 6 is disposed at a position corresponding to the second via hole 42
  • a read signal is set at a position corresponding to the position of the third via hole 43.
  • the line 9 and the connection electrode 8, the first electrode 61 of the photosensitive device 6, and the read signal line 9 are disposed in the same layer and have the same material.
  • a photosensitive functional layer 62 is provided on the first electrode 61 of the photosensitive device 6.
  • the photosensitive functional layer 62 includes an N-type a-Si layer 621, an intrinsic a-Si layer 622, a P-type a-Si layer 623, and an auxiliary layer 624 which are sequentially disposed in a direction away from the substrate 10.
  • An interlayer insulating layer 11 is disposed on the layer where the photosensitive functional layer 62 is located, and a fourth via 111 is disposed at a position corresponding to the first insulating layer 11 of the light emitting device.
  • the position corresponding to the photosensitive functional layer 62 of the photosensitive device 6 forms a fifth via 112.
  • a first electrode 51 of the light emitting device is disposed at a position corresponding to the fourth via 111
  • a second electrode 63 of the photosensitive device 6 is disposed at a position corresponding to the fifth via 112; and the first electrode 51 of the light emitting device It is disposed in the same layer as the second electrode 63 of the photosensitive device 6 and has the same material.
  • a pixel defining layer 7 is formed on a layer where the first electrode 51 of the light emitting device and the second electrode 63 of the photosensitive device 6 are located, and a first receiving groove 71 is formed at a position where the pixel defining layer 7 corresponds to the first electrode 51 of the light emitting device. .
  • a luminescent material layer 52 is disposed in the first accommodating groove 71; and a second electrode 53 of the light emitting device is disposed on the layer where the luminescent material layer 52 is located.
  • the photosensitive touch substrate may further include other structures such as an encapsulation layer covering the second electrode 53 of the light emitting device and the second electrode 63 of the photosensitive device 6, and will not be enumerated here.
  • the embodiment of the invention provides a display device, which includes the photosensitive touch substrate described in the above embodiments, and is not described in detail herein.
  • the display device can be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • a display function such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • the display device refer to the embodiment of the above-mentioned photosensitive touch substrate, and the repeated description is omitted.
  • the display device of the embodiment has the above-mentioned photosensitive touch substrate, the preparation process can be simple and the productivity is high.
  • the photosensitive touch panel includes a plurality of photosensitive touch units as shown in FIG. 8 or FIG.
  • the plurality of photosensitive touch units are arranged in an array.
  • the array of the photosensitive touch units is progressively scanned by gate lines Gate1, Gate2, Gate3, ... to turn on the switching transistors in the corresponding photosensitive touch units.
  • the sensing lines S line1, S line2, S line3, ... are from the second of the photosensitive device D1
  • the electrodes collect corresponding photocurrents (or other electrical signals). After scanning the entire photosensitive touch panel, multi-touch recognition of the entire photosensitive touch panel is realized.

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Abstract

一种感光触控基板及其制备方法、显示装置。该感光触控基板的制备方法包括：在基底（10）上形成发光器件的第一电极（51）、发光材料层（52）、第二电极（53）；在基底上形成感光器件的第一电极（61）、感光功能层（62）、第二电极（63）；感光器件的第一电极和第二电极中的一者与发光器件的第一电极采用一次掩模形成。在该感光触控基板的制备方法中，感光器件的第一电极和第二电极中的一者是与发光器件的第一电极采用一次掩模形成的，故可以简化感光触控基板的制备工艺，提高生产效率。

Description

感光触控基板及其制备方法、显示装置
相关申请
本申请要求保护在2017年1月11日提交的申请号为201710017733.X的中国专利申请的优先权，该申请的全部内容以引用的方式结合到本文中。
技术领域
本发明属于显示技术领域，具体涉及一种感光触控基板及其制备方法、显示装置。
背景技术
触摸屏因具有易操作性、直观性和灵活性等优点，已成为个人移动通讯设备和综合信息终端，如平板电脑、智能手机，以及超级笔记本电脑等主要人机交互手段。
同时，有机发光显示器(Organic Light Emitting Diode；OLED)作为一种高档消费类产品，是当今平板显示器研究领域的热点之一。与液晶显示器(Liquid Crystal Display；LCD)相比，OLED具有低能耗、生产成本低、白发光、宽视角及响应速度快等优点。目前，在手机、PDA、数码相机等显示领域，OLED已经开始取代传统的液晶显示屏。
发明内容
发明人发现，现有技术中，在OLED显示器中增加触控功能的制成中，通常是先现制作OLED显示器件结构，之后再制备触控功能器件(例如：感光器件)，工艺步骤复杂，因此提供一种工艺步骤简单的感光触控基板的制备方法是亟需要解决的技术问题。
本发明实施例旨在至少解决现有技术中存在的技术问题之一，提供一种制备工艺简单的感光触控基板的制备方法、感光触控基板及显示装置。
本发明实施例提供了一种感光触控基板的制备方法，包括：在基底上形成发光器件的第一电极、发光材料层、第二电极；在所述基底上形成感光器件的第一电极、感光功能层、第二电极；所述感光器件 的第一电极和第二电极中的一者与所述发光器件的第一电极采用一次掩模形成。
可选的是，所述感光器件的第一电极与所述发光器件的第一电极采用一次掩模形成；所述感光器件的第二电极与所述发光器件的第二电极采用一次掩模形成。
进一步可选的是，在所述基底上形成所述发光器件和所述感光器件之前还包括：
在所述基底上形成驱动晶体管、读取晶体管；
形成平坦化层，并在与所述驱动晶体管的漏极对应的位置刻蚀形成第一过孔，在与所述读取晶体管的源极对应的位置刻蚀形成第二过孔；所述发光器件的第一电极通过所述第一过孔与所述驱动晶体管的漏极直接连接；所述感光器件的第一电极通过所述第二过孔与所述读取晶体管的源极直接连接。
进一步可选的是，形成所述发光器件和所述感光器件的步骤包括：
在形成所述第一过孔和所述第二过孔的基底上，通过一次掩模形成包括所述感光器件的第一电极与所述发光器件的第一电极；
形成感光功能层；
形成像素限定层，并在与所述发光器件的第一电极对应的位置形成第一容纳槽，在与所述感光器件的感光功能层对应的位置形成第二容纳槽；
在所述第一容纳槽中形成发光材料层；
通过一次掩模形成包括所述发光器件的第二电极和位于第二容纳槽中的所述感光器件的第二电极的图案。
可选的是，所述感光器件的第二电极与所述发光器件的第一电极采用一次掩模形成；在所述基底上形成所述发光器件和所述感光器件之前还包括：
在所述基底上形成驱动晶体管、读取晶体管；
在完成上述步骤的基底上，形成平坦化层，并在与所述驱动晶体管的漏极对应的位置刻蚀形成第一过孔，在与所述读取晶体管的源极对应的位置刻蚀形成第二过孔；
形成包括连接电极和所述感光器件的第一电极的图案；其中，所述连接电极通过所述第一过孔将所述发光器件的第一电极与所述驱动 晶体管的漏极连接；所述感光器件的第一电极通过所述第二过孔与所述读取晶体管的源极直接连接。
进一步可选的是，在形成所述第一过孔和所述第二过孔的同时，还在所述平坦化层与所述读取晶体管的漏极对应的位置刻蚀形成有第三过孔；
在形成所述连接电极和所述感光器件的第一电极的同时，还形成有读取信号线；所述读取信号线通过所述第三过孔与所述读取晶体管的漏极连接。
进一步可选的是，形成所述发光器件和所述感光器件的感光功能层、第二电极的步骤具体包括：
在形成有连接电极和所述感光器件的第一电极的基底上，形成感光功能层；
形成层间绝缘层，并在与所述连接电极对应的位置形成第四过孔，在与所述感光器件的感光功能层对应的位置形成第五过孔；
通过一次掩模形成包括位于所述第四过孔中的所述发光器件的第一电极和位于第五过孔中的所述感光器件的第二电极的图案；
形成像素限定层，并在与所述发光器件的第一电极对应的位置形成第一容纳槽；
在所述第一容纳槽中形成发光材料层；
通过一次掩模形成包括所述发光器件的第二电极的图案。
可选的是，形成所述感光功能层的步骤包括：
在沿背离所述基底方向，依次沉积N型a-Si层、本征型a-Si层、以及P型a-Si层，通过一次掩模在与所述感光器件的第一电极对应的位置形成包括感光功能层的图案。
本发明实施例提供了一种感光触控基板，包括：基底，设置在基底上的发光器件和感光器件；其中，所述发光器件包括依次设置在基底上的第一电极、发光材料层、第二电极；所述感光器件包括依次设置在基底上的第一电极、感光功能层、第二电极；所述感光器件的第一电极和第二电极中的一者与所述发光器件的第一电极同层设置且材料相同。
可选的是，所述感光器件的第一电极与所述发光器件的第一电极同层设置且材料相同；所述感光器件的第二电极与所述发光器件的第 二电极同层设置且材料相同。
进一步可选的是，所述感光触控基板还包括：设置在基底上的驱动晶体管、读取晶体管；
设置在所述驱动晶体管、所述读取晶体管所在层上的平坦化层，且在所述平坦化层与所述驱动晶体管的漏极对应的位置设置有第一过孔，在与所述读取晶体管的源极对应的位置设置有第二过孔；所述发光器件的第一电极通过所述第一过孔与所述驱动晶体管的漏极直接连接；所述感光器件的第一电极通过所述第二过孔与所述读取晶体管直接连接。
可选的是，所述感光器件的第二电极与所述发光器件的第一电极同层设置且材料相同；所述感光触控基板还包括：
设置在基底上的驱动晶体管、读取晶体管；
设置在所述驱动晶体管、所述读取晶体管所在层上的平坦化层，且在所述平坦化层与所述驱动晶体管的漏极对应的位置设置有第一过孔，在与所述读取晶体管的源极对应的位置设置有第二过孔；
覆盖所述第一过孔的连接电极，所述感光器件的第一电极覆盖所述第二过孔；其中，所述连接电极通过所述第一过孔将所述发光器件的第一电极与所述驱动晶体管的漏极连接；所述感光器件的第一电极通过所述第二过孔与所述读取晶体管的源极直接连接。
进一步可选的是，在所述平坦化层中还设置有与所述读取晶体管的漏极对应的位置设置有第三过孔；
在所述第三过孔上覆盖有读取信号线；所述读取信号线通过所述第三过孔与所述读取晶体管的漏极连接。
可选的是，所述感光功能层包括：在沿背离所述基底方向，依次设置的N型a-Si层、本征型a-Si层、以及P型a-Si层。
本发明实施例提供了一种显示装置，其包括上述的感光触控基板。
在本发明实施例的感光触控基板的制备方法中，感光器件的第一电极和第二电极中的一者是与发光器件的第一电极采用一次掩模形成的，故可以简化感光触控基板的制备工艺，提高生产效率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面 将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例的第一种可选实现方式的感光触控基板的制备方法的流程图；
图2为本发明实施例的第一种和第二种可选实现方式的感光触控基板的制备方法中步骤101所形成结构的示意图；
图3为本发明实施例的第一种可选实现方式的感光触控基板的制备方法中步骤102所形成结构的示意图；
图4为本发明实施例的第一种可选实现方式的感光触控基板的制备方法中步骤103所形成结构的示意图；
图5为本发明实施例的第一种可选实现方式的感光触控基板的制备方法中步骤104所形成结构的示意图；
图6为本发明实施例的第一种可选实现方式的感光触控基板的制备方法中步骤105所形成结构的示意图；
图7为本发明实施例的第一种可选实现方式的感光触控基板的制备方法中步骤106所形成结构的示意图；
图8为本发明实施例的第一种可选实现方式的感光触控基板的制备方法中步骤107所形成结构的示意图；
图9为本发明实施例的第二种可选实现方式的感光触控基板的制备方法的流程图；
图10为本发明实施例的第二种可选实现方式的感光触控基板的制备方法中步骤202所形成结构的示意图；
图11为本发明实施例的第二种可选实现方式的感光触控基板的制备方法中步骤203所形成结构的示意图；
图12为本发明实施例的第二种可选实现方式的感光触控基板的制备方法中步骤204所形成结构的示意图；
图13为本发明实施例的第二种可选实现方式的感光触控基板的制备方法中步骤205所形成结构的示意图；
图14为本发明实施例的第二种可选实现方式的感光触控基板的制备方法中步骤206所形成结构的示意图；
图15为本发明实施例的第二种可选实现方式的感光触控基板的制备方法中步骤207所形成结构的示意图；
图16为本发明实施例的第二种可选实现方式的感光触控基板的制备方法中步骤208所形成结构的示意图；
图17为本发明实施例的第二种可选实现方式的感光触控基板的制备方法中步骤209所形成结构的示意图；以及
图18为本发明实施例的触控感光面板的工作原理示意图。
附图标记：10、基底；1、开关晶体管；2、驱动晶体管；3、读取晶体管；4、平坦化层；41、第一过孔；42、第二过孔；43、第三过孔；5、发光器件/OLED器件；51、发光器件的第一电极/阳极；52、发光材料层；53、发光器件的第二电极/阴极；6、感光器件；61、感光器件的第一电极；62、感光功能层；63、感光器件的第二电极；621、N型a-Si层；622、本征型a-Si层；623、P型a-Si层；624、辅助层；7、像素限定层；71、第一容纳槽；72、第二容纳槽；8、连接电极；9、读取信号线；11、层间绝缘层；111、第四过孔；112、第五过孔。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明专利保护的范围。
本发明实施例提供一种感光触控基板的制备方法，包括在基底上形成发光器件和感光器件的步骤。其中，形成发光器件的步骤包括在基底上依次形成发光器件的第一电极、发光材料层、第二电极的步骤。形成感光器件的步骤包括在基底上依次形成第一电极、感光功能层、第二电极的步骤。特别的是，在本实施例中，感光器件的第一电极与发光器件的第一电极和第二电极中的一者采用一次掩模形成。
在本实施例的感光触控基板的制备方法中，感光器件的第一电极和第二电极中的一者是与发光器件的第一电极采用一次掩模形成的，故可以简化感光触控基板的制备工艺，提高生产效率。
在本公开的上下文中，“构图工艺”指的是利用光刻技术对材料 层进行图案化的工艺，“一次掩模”指的是利用仅一个掩模板、经过一次曝光和蚀刻而形成所需图案的构图工艺。
在此需要说明的是，可选地，本实施例中的发光器件为有机电致发光器件，即OLED器件。发光器件的第一电极为OLED器件的阳极，发光器件的第二电极为OLED器件的阴极。当然，这并不构成对本实施例中的发光器件的限制，其他发光器件也是可行的。以下，均以感光触控基板中的每个触控单元由感光器件和读取晶体管构成；驱动OLED器件发光的像素电路包括驱动晶体管和开关晶体管；发光器件为OLED器件，发光器件的第一电极为OLED器件的阳极，发光器件的第二电极为OLED器件的阴极为例进行说明。
为更清楚的理解本实施例的感光触控基板的制备方法，具体结合下述两种可选实现方式对该制备方法进行说明。其中，在以下步骤中，构图工艺，可只包括光刻工艺，或，包括光刻工艺以及刻蚀步骤，同时还可以包括打印、喷墨等其他用于形成预定图案的工艺。光刻工艺，是指包括成膜、曝光、显影等工艺过程的利用光刻胶、掩模板、曝光机等形成图案的工艺。形成薄膜通常有沉积、涂敷、溅射等多种方式。
在本公开的上下文中，感光器件指的是诸如光电二极管的能够将光强转换为电信号的器件。因此，在本公开的图8或图14所示的感光触控基板中，感光器件6的第一电极61和第二电极63可以分别是光电二极管的阳极和阴极。可替换地，感光器件6的第一电极61和第二电极63也可以分别是光电二极管的阴极和阳极。
本实施例的第一种可选实现方式中，感光器件6的第一电极61与OLED器件的阳极51采用一次掩模形成。
结合图1所示的感光触控基板的制备方法的流程图和图2-8所示的结构示意图，该感光触控基板的制备方法具体包括如下步骤。
步骤101、在基底10上，例如通过构图工艺，形成包括用于驱动OLED器件5发光的驱动晶体管2、开关晶体管1、以及触控单元中的读取晶体管3的各层结构，如图2所示。
以该步骤中所形成的驱动晶体管2、开关晶体管1、读取晶体管3为底栅型薄膜晶体管为例，该步骤可以为：栅极/栅线/→栅极绝缘层→有源层→源极/漏极。
步骤102、在完成步骤101的基底10上，涂覆形成平坦化层4。 通过刻蚀工艺，在与所述驱动晶体管2的漏极对应的位置刻蚀形成第一过孔41，在与所述读取晶体管3的源极对应的位置形成第二过孔42，如图3所示。
步骤103、在完成步骤102的基底10上，通过一次掩模形成包括OLED器件的阳极51(第一电极)和感光器件6的第一电极61的图案。其中，OLED器件的阳极51通过所述第一过孔41与所述驱动晶体管2的漏极直接连接。所述感光器件6的第一电极61通过所述第二过孔42与所述读取晶体管3的源极直接连接，如图4所示。
步骤104、在完成步骤103的基底10上，形成感光器件6的感光功能层62，如图5所示。
该步骤具体可以包括：在沿背离所述基底10方向，依次沉积N型a-Si层621、本征型a-Si层622、P型a-Si层623，以及辅助层624。通过一次掩模在与所述感光器件6的第一电极61对应的位置形成包括感光功能层62的图案。在此需要说明的是，之所以形成辅助层624(ITO cap层)是由于在辅助层624顶部形成的过孔72较小，辅助层624可以更好的俘获电荷。若在辅助层624顶部形成的过孔72的尺寸足够大，也可以不用形成辅助层624。
步骤105、在完成步骤104的基底10上，形成像素限定层7，并在与所述发光器件的第一电极51对应的位置形成第一容纳槽71。在与所述感光器件6的感光功能层62对应的位置形成第二容纳槽72，如图6所示。
步骤106、在完成步骤105的基底10上，在所述第一容纳槽71中形成OLED器件的发光材料层52，如图7所示。可选的，形成发光材料层52的方式为喷墨打印的方式。此时所形成的发光层仅在第一容纳槽71中，在感光器件6上并没有发光材料层52，此时可以增加入射至感光器件6的光的通量，从而可以提高光学触控精度。当然，也可以采用蒸镀的方式形成OLED器件5的发光材料层52。
步骤107、在完成步骤106的基底10上，通过一次掩模形成包括OLED器件的阴极53(第二电极)和位于第二容纳槽72中的感光器件6的第二电极63的图案，如图8所示。当然，OLED器件的阴极53和感光器件的第二电极63也可以采用两次构图工艺形成。
至此，完成感光触控基板的制备。当然，该感光触控基板的制备 方法还可以包括在OLED器件的阴极53和感光器件6的第二电极63所在层上形成封装层的步骤。
相应的，本实施例提供了一种可上述的制备方法制备的感光触控基板。其中，本实施例中，所述的“同层设置”并非是宏观上的同层，而是指在一次掩模中所形成的图案。
具体的，如图8所示，该感光触控基板包括：基底10，设置在基底10上的开关晶体管1、驱动晶体管2、读取晶体管3，且开关晶体管1、驱动晶体管2、读取晶体管3可以同时制备。也即，开关晶体管1的控制极(栅极)与驱动晶体管2的控制极(栅极)和读取晶体管3的控制极(栅极)同层设置且材料相同，这三者的源、漏极同层设置且材料相同。该感光触控基板还包括：设置在所述开关晶体管1、所述驱动晶体管2、所述读取晶体管3所在层上的平坦化层4，且在所述平坦化层4与所述驱动晶体管2的第二电极63对应的位置设置有第一过孔41，在与所述读取晶体管3的源极对应的位置设置有第二过孔42；在第一过孔41对应的位置设置发光器件的第一电极51，在第二过孔42对应的位置设置感光器件6的第一电极61。其中，发光器件的第一电极51通过所述第一过孔41与所述驱动晶体管2的漏极直接连接；感光器件6的第一电极61通过所述第二过孔42与所述读取晶体管3直接连接。在感光器件6的第一电极61上设置感光功能层62。该感光功能层62包括：在沿背离所述基底10方向，依次设置的N型a-Si层621、本征型a-Si层622、P型a-Si层623，以及辅助层624。在感光功能层62所在层上设置像素限定层7，并在该像素限定层7与发光器件的第一电极51对应的位置设置第一容纳槽71，在与感光器件6的感光功能层62对应的位置设置第二容纳槽72。在第一容纳槽71中色设置有发光材料层52。在设置发光材料层52的基底10上设置发光器件的第二电极53和位于第二容纳槽72中的感光器件6的第二电极63。其中，第二电极63覆盖发光材料层52，且与感光器件6的第二电极63同层设置且材料相同。
当然，该感光触控基板上还可以包括覆盖在发光器件的第二电极53和感光器件的第二电极63所在层上的封装层等其他结构，在此不再一一列举。
本实施例的第二种可选实现方式中，感光器件6的第二电极63与 所述发光器件的第一电极51采用一次掩模形成。
结合图9所示，该感光触控基板的制备方法具体包括如下步骤：
步骤201、在基底10上，例如通过构图工艺，形成包括用于驱动OLED器件5发光的驱动晶体管2、开关晶体管1、以及触控单元中的读取晶体管3的各层结构，如图2所示。
以该步骤中所形成的驱动晶体管2、开关晶体管1、读取晶体管3为底栅型薄膜晶体管为例，该步骤可以为：栅极/栅线/→栅极绝缘层→有源层→源极/漏极。
步骤202、在完成步骤201的基底10上，形成平坦化层4，并在与所述驱动晶体管2的第二电极63对应的位置刻蚀形成第一过孔41。在与所述读取晶体管3的源极对应的位置形成第二过孔42，与所读取晶体管3的漏极对应的位置形成有第三过孔43，如图10所示。
步骤203、在完成步骤202的基底10上，通过例如构图工艺形成包括连接电极8、感光器件6的第一电极、读取信号线9的图案，如图11所示。其中，所述连接电极8通过所述第一过孔41将OLED器件的阳极51与驱动晶体管2的漏极连接。感光器件6的第一电极61通过第二过孔42与读取晶体管3直接连接。读取信号线9通过第三过孔43与读取晶体管3的漏极连接。可选地，连接电极8、感光器件6的第一电极、读取信号线9的材料为金属材料。
步骤204、在完成步骤203的基底10上，形成感光器件6的感光功能层62，如图12所示。
该步骤具体可以包括：在沿背离所述基底10方向，依次沉积N型a-Si层621、本征型a-Si层622、P型a-Si层623，以及辅助层624，通过一次掩模在与所述感光器件6的第一电极61对应的位置形成包括感光功能层62的图案。在此需要说明的是，之所以形成辅助层624是由于之后所形成第五过孔112较小，辅助层624可以更好的俘获电荷。若第五过孔112尺寸足够大，也可以不用形成辅助层624。
步骤205、在完成步骤204的基底10上，形成层间绝缘层11，并在与连接电极8对应的位置形成第四过孔111。在与感光器件6的感光功能层62对应的位置形成第五过孔112，如图13所示。
步骤206、在完成步骤205基底10上，通过一次掩模形成包括位于第四过孔111中的OLED器件的阳极51和位于第五过孔112中的感 光器件6的第二电极63的图案，如图14所示。
步骤207、在完成步骤206的基底10上，形成像素限定层7，并在与所述发光器件的第一电极51对应的位置形成第一容纳槽71，如图15所示。
步骤208、在完成步骤207的基底10上，在所述第一容纳槽71中形成OLED器件5的发光材料层52，如图16所示。其中，形成OLED器件5的发光材料层52所采用的方式为蒸镀，当然也可以采用喷墨打印的方式。
步骤209、在完成步骤208的基底10上，通过例如构图工艺形成包括OLED器件的阴极53的图案，如图17所示。
至此，完成感光触控基板的制备，当然，该感光触控基板的制备方法还可以包括在OLED器件的阴极53和感光器件6的第二电极63所在层上形成封装层的步骤。
相应的，本发明实施例提供了一种可上述的制备方法制备的感光触控基板。具体的，如图17所示，该感光触控基板包括：基底10，设置在基底10上的开关晶体管1、驱动晶体管2、读取晶体管3，且开关晶体管1、驱动晶体管2、读取晶体管3可以同时制备；也即，开关晶体管1的控制极(栅极)与驱动晶体管2的控制极(栅极)和读取晶体管3的控制极(栅极)同层设置且材料相同，这三者的源、漏极同层设置且材料相同。该感光触控基板还包括：设置在所述开关晶体管1、所述驱动晶体管2、所述读取晶体管3所在层上的平坦化层4，且在所述平坦化层4与所述驱动晶体管2的第二电极63对应的位置设置有第一过孔41，在与所述读取晶体管3的源极对应的位置设置有第二过孔42，在与所述读取晶体管3的漏极对应的位置设置有第三过孔43。在与第一过孔41对应的位置设置连接电极8，在与第二过孔42对应的位置设置感光器件6的第一电极61，在与第三过孔43位置对应的位置设置读取信号线9，且连接电极8、感光器件6的第一电极61、读取信号线9同层设置且材料相同。在感光器件6的第一电极61上设置感光功能层62。该感光功能层62包括：在沿背离所述基底10方向，依次设置的N型a-Si层621、本征型a-Si层622、P型a-Si层623、以及辅助层624。在感光功能层62所在层上设置层间绝缘层11，并在该层间绝缘层11与发光器件的第一电极51对应的位置设置第四过孔111，在与 感光器件6的感光功能层62对应的位置形成第五过孔112。在与第四过孔111对应的位置设置发光器件的第一电极51，在与所述第五过孔112对应的位置设置感光器件6的第二电极63；且该发光器件的第一电极51与感光器件6的第二电极63同层设置且材料相同。在发光器件的第一电极51与感光器件6的第二电极63所在层上形成像素限定层7，并在该像素限定层7与发光器件的第一电极51对应的位置形成第一容纳槽71。所述第一容纳槽71中设置发光材料层52；在发光材料层52所在层上设置发光器件的第二电极53。
当然，该感光触控基板上还可以包括覆盖在发光器件的第二电极53和感光器件6的第二电极63所在层上的封装层等其他结构，在此不再一一列举。
本发明实施例提供一种显示装置，包括以上实施例所述的感光触控基板，此处不详细描述。该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。该显示装置的实施可以参见上述感光触控基板的实施例，重复之处不再赘述。
由于本实施例的显示装置具有上述的感光触控基板，故其可以制备工艺简单，产能较高。
在实际使用中，如图18所示，感光触控面板包括多个如图8或图17中所示的感光触控单元。所述多个感光触控单元以阵列形式排列。利用栅线Gate1、Gate2、Gate3......对所述感光触控单元的阵列进行逐行扫描，从而开启相应的感光触控单元中的开关晶体管。当发光器件发出的光由于感光触控面板上的触摸而被反射至所述感光器件D1时，感应线S line1、S line2、S line3......从所述感光器件D1的第二电极收集到相应的光电流(或，其他电信号)。在对整个感光触控面板进行扫描之后，实现了整个感光触控面板的多点触控识别。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此。任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (16)

  1. 一种感光触控基板的制备方法，包括：在基底上形成发光器件的第一电极、发光材料层、第二电极；在所述基底上依次形成感光器件的第一电极、感光功能层、第二电极；其中，所述感光器件的第一电极和第二电极中的一者与所述发光器件的第一电极采用一次掩模形成。
  2. 根据权利要求1所述的感光触控基板的制备方法，其中，所述触控感光器件的第一电极与所述发光器件的第一极采用一次掩模制备；所述感光器件的第二电极与所述发光器件的第二电极采用一次掩模形成。
  3. 根据权利要求2所述的感光触控基板的制备方法，其中，在所述基底上形成所述发光器件和所述感光器件之前还包括：
    在所述基底上形成驱动晶体管、读取晶体管；
    形成平坦化层，并在与所述驱动晶体管的漏极对应的位置刻蚀形成第一过孔，在与所述读取晶体管的源极对应的位置刻蚀形成第二过孔；所述发光器件的第一电极通过所述第一过孔与所述驱动晶体管的漏极直接连接；所述感光器件的第一电极通过所述第二过孔与所述读取晶体管的源极直接连接。
  4. 根据权利要求3所述的感光触控基板的制备方法，其中，形成所述发光器件和所述感光器件的步骤包括：
    在形成所述第一过孔和所述第二过孔的基底上，通过一次掩模形成包括所述感光器件的第一电极与所述发光器件的第一电极；
    形成感光功能层；
    形成像素限定层，并在与所述发光器件的第一电极对应的位置形成第一容纳槽，在与所述感光器件的感光功能层对应的位置形成第二容纳槽；
    在所述第一容纳槽中形成发光材料层；
    通过一次掩模形成包括所述发光器件的第二电极和位于第二容纳槽中的所述感光器件的第二电极的图案。
  5. 根据权利要求1所述的感光触控基板的制备方法，其中，所述感光器件的第二电极与所述发光器件的第一电极采用一次掩模形成； 在所述基底上形成所述发光器件和所述感光器件之前还包括：
    在所述基底上形成驱动晶体管、读取晶体管；
    形成平坦化层，并在与所述驱动晶体管的漏极对应的位置刻蚀形成第一过孔，在与所述读取晶体管的源极对应的位置刻蚀形成第二过孔；
    形成包括连接电极和所述感光器件的第一电极的图案；其中，所述连接电极通过所述第一过孔将所述发光器件的第一电极与所述驱动晶体管的漏极连接；所述感光器件的第一电极通过所述第二过孔与所述读取晶体管的源极直接连接。
  6. 根据权利要求5所述的感光触控基板的制备方法，其中，在形成所述第一过孔和所述第二过孔的同时，还在所述平坦化层与所述读取晶体管的漏极对应的位置刻蚀形成有第三过孔；
    在形成所述连接电极和所述感光器件的第一电极的同时，还形成有读取信号线；所述读取信号线通过所述第三过孔与所述读取晶体管的漏极连接。
  7. 根据权利要求5所述的感光触控基板的制备方法，其中，形成所述发光器件和所述感光器件的感光功能层、第二电极的步骤具体包括：
    在形成有连接电极和所述感光器件的第一电极的基底上，形成感光功能层；
    形成层间绝缘层，并在与所述连接电极对应的位置形成第四过孔，在与所述感光器件的感光功能层对应的位置形成第五过孔；
    通过一次掩模形成包括位于所述第四过孔中的所述发光器件的第一电极和位于第五过孔中的所述感光器件的第二电极的图案；
    形成像素限定层，并在与所述发光器件的第一电极对应的位置形成第一容纳槽；
    在所述第一容纳槽中形成发光材料层；
    通过一次掩模形成包括所述发光器件的第二电极的图案。
  8. 根据权利要求1-7中任一项所述的感光触控基板的制备方法，其中，形成所述感光功能层的步骤包括：
    在沿背离所述基底方向，依次沉积N型a-Si层、本征型a-Si层、以及P型a-Si层，通过一次掩模在与所述感光器件的第一电极对应的 位置形成包括感光功能层的图案。
  9. 根据权利要求1-7中任一项所述的感光触控基板的制备方法，其中，所述感光器件是光电二极管，所述感光器件的第一电极是所述光电二极管的阳极或阴极。
  10. 一种感光触控基板，包括：基底，设置在基底上的发光器件和感光器件；其中，所述发光器件包括依次设置在基底上的第一电极、发光材料层、第二电极；所述感光器件包括依次设置在基底上的第一电极、感光功能层、第二电极；其中，所述感光器件的第一电极和第二电极中的一者与所述发光器件的第一电极同层设置且材料相同。
  11. 根据权利要求10所述的感光触控基板，其中，所述感光器件的第一电极与所述发光器件的第一电极同层设置且材料相同；所述感光器件的第二电极与所述发光器件的第二电极同层设置且材料相同。
  12. 根据权利要求11所述的感光触控基板，还包括：
    设置在基底上的驱动晶体管、读取晶体管；
    设置在所述驱动晶体管、所述读取晶体管所在层上的平坦化层，且在所述平坦化层与所述驱动晶体管的漏极对应的位置设置有第一过孔，在与所述读取晶体管的源极对应的位置设置有第二过孔；所述发光器件的第一电极通过所述第一过孔与所述驱动晶体管的漏极直接连接；所述感光器件的第一电极通过所述第二过孔与所述读取晶体管直接连接。
  13. 根据权利要求10所述的感光触控基板，其中，所述感光器件的第二电极与所述发光器件的第一电极同层设置且材料相同；所述感光触控基板还包括：
    设置在基底上的驱动晶体管、读取晶体管；
    设置在所述驱动晶体管、所述读取晶体管所在层上的平坦化层，且在所述平坦化层与所述驱动晶体管的漏极对应的位置设置有第一过孔，在与所述读取晶体管的源极对应的位置设置有第二过孔；
    覆盖所述第一过孔的连接电极，所述感光器件的第一电极覆盖所述第二过孔；其中，所述连接电极通过所述第一过孔将所述发光器件的第一电极与所述驱动晶体管的漏极连接；所述感光器件的第一电极通过所述第二过孔与所述读取晶体管的源极直接连接。
  14. 根据权利要求13所述的感光触控基板，其中，在所述平坦化 层中还设置有与所述读取晶体管的漏极对应的位置设置有第三过孔；
    在所述第三过孔上覆盖有读取信号线；所述读取信号线通过所述第三过孔与所述读取晶体管的漏极连接。
  15. 根据权利要求9-14中任一项所述的感光触控基板，其中，所述感光功能层包括：在沿背离所述基底方向，依次设置的N型a-Si层、本征型a-Si层、以及P型a-Si层。
  16. 一种显示装置，包括权利要求9-15中任一项所述的感光触控基板。
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