WO2016147941A1 - 原子層堆積阻害材料 - Google Patents
原子層堆積阻害材料 Download PDFInfo
- Publication number
- WO2016147941A1 WO2016147941A1 PCT/JP2016/057067 JP2016057067W WO2016147941A1 WO 2016147941 A1 WO2016147941 A1 WO 2016147941A1 JP 2016057067 W JP2016057067 W JP 2016057067W WO 2016147941 A1 WO2016147941 A1 WO 2016147941A1
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- WIPO (PCT)
- Prior art keywords
- fluorine
- layer deposition
- atomic layer
- containing resin
- electronic component
- Prior art date
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 120
- 230000002401 inhibitory effect Effects 0.000 title claims abstract description 51
- 239000000463 material Substances 0.000 title claims abstract description 44
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 133
- 239000011737 fluorine Substances 0.000 claims abstract description 115
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 103
- 239000011347 resin Substances 0.000 claims abstract description 86
- 229920005989 resin Polymers 0.000 claims abstract description 86
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 7
- 125000004185 ester group Chemical group 0.000 claims abstract description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 7
- 125000005462 imide group Chemical group 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 36
- 229910010272 inorganic material Inorganic materials 0.000 claims description 18
- 239000011147 inorganic material Substances 0.000 claims description 18
- 125000004432 carbon atom Chemical group C* 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 13
- 125000001153 fluoro group Chemical group F* 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000005764 inhibitory process Effects 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- 125000000524 functional group Chemical group 0.000 description 14
- 229910052718 tin Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- 229910017107 AlOx Inorganic materials 0.000 description 3
- -1 TiN Chemical class 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 3
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- 229910010282 TiON Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 1
- XILIYVSXLSWUAI-UHFFFAOYSA-N 2-(diethylamino)ethyl n'-phenylcarbamimidothioate;dihydrobromide Chemical compound Br.Br.CCN(CC)CCSC(N)=NC1=CC=CC=C1 XILIYVSXLSWUAI-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910002711 AuNi Inorganic materials 0.000 description 1
- 229910015801 BaSrTiO Inorganic materials 0.000 description 1
- 229910003336 CuNi Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/02—Halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/085—Vapour deposited
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
- H01G4/186—Organic dielectrics of synthetic material, e.g. derivatives of cellulose halogenated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
Definitions
- the present invention relates to a selective film formation method on a substrate using an atomic layer deposition method.
- Atomic layer deposition is used in the manufacture of various electronic components such as capacitors and semiconductor devices.
- conductive thin films as electrodes or wirings and insulation as dielectric layers are used.
- the conductive thin film is formed by ALD.
- ALD Atomic layer deposition
- a patterning technique for forming a thin film having a predetermined shape at a predetermined position on the substrate is required.
- Non-Patent Document 1 when TiO 2 is formed by ALD from a combination of titanium isopropoxide (TiIP) and water vapor (H 2 O), a TiO 2 film is formed on polymethyl methacrylate (PMMA). It is described that a TiO 2 film can be selectively formed by patterning on a substrate as an atomic layer deposition inhibiting material without being formed.
- Patent Documents 1 and 2 disclose that selective film formation is possible by using various polymers typified by acrylic resins and organosiloxanes as atomic layer deposition-inhibiting materials.
- the patterning technique as described above is limited in terms of ALD conditions, particularly temperature.
- the method of Non-Patent Document 1 cannot be used because PMMA is thermally decomposed under conditions exceeding 200 ° C.
- the method cannot be used under conditions exceeding 250 ° C.
- the inventors' research has found that the conventional patterning technique may not have sufficient inhibitory effect.
- an object of the present invention is to provide an atomic layer deposition inhibiting material that can be used even under high temperature conditions and has a high inhibiting effect.
- a specific fluorine-containing resin in particular, a high fluorine content, has tertiary carbon or quaternary carbon, and has no functional group. It has been found that by using a fluorine-containing resin, a sufficient effect of inhibiting atomic layer deposition can be obtained even under high temperature conditions, leading to the present invention.
- the fluorine content is 30 at% or more, at least one tertiary carbon or quaternary carbon, and an ester group, a hydroxyl group, a carboxyl group, and an imide group
- an atomic layer deposition-inhibiting material composed of a fluorine-containing resin that does not have any of
- the fluorine content is 30 at% or more, and the fluorine content reduction rate when exposed to atomic layer deposition conditions at 250 ° C. is 50% or less.
- An atomic layer deposition inhibiting material composed of a resin is provided.
- an atomic layer deposition-inhibiting material composed of a fluorine-containing resin having a fluorine content of 25 at% or more after being exposed to 250 ° C. atomic layer deposition conditions. .
- a method of forming a thin film pattern of an inorganic material on a substrate by an atomic layer deposition method Forming a pattern of an atomic layer deposition-inhibiting layer on the substrate using the above-described atomic layer deposition-inhibiting material;
- an atomic layer deposition method is used to form an inorganic material layer in a region where the atomic layer deposition-inhibiting layer is not present, Is provided.
- an electronic component comprising a substrate, a fluorine-containing resin layer having a fluorine content of 25 at% or more, and an inorganic material layer formed by an atomic layer deposition method.
- An electronic component is provided in which the fluororesin layer and the inorganic material layer are adjacent to each other.
- an electronic component comprising a substrate, a fluorine-containing resin layer having a fluorine content of 25 at% or more, and a nitride layer, An electronic component is provided in which the fluororesin layer and the nitride layer are located adjacent to each other.
- a specific fluorine-containing resin particularly a fluorine-containing resin having a high fluorine content, having tertiary carbon or quaternary carbon, and having no functional group is used as an atomic layer deposition inhibiting material. Even in the atomic layer deposition method under high temperature conditions, the atomic layer deposition inhibiting effect can be suitably obtained, and a thin film having a desired pattern can be formed.
- FIG. 1 is a cross-sectional view of a capacitor 1 manufactured using the present invention.
- 2 (a) to 2 (c) are diagrams for explaining the manufacturing process of the capacitor 1 manufactured by using the present invention.
- FIGS. 2D to 2E are diagrams for explaining the manufacturing process of the capacitor 1 manufactured using the present invention. It is a figure which shows the area
- the atomic layer deposition inhibiting material of the present invention is composed of a fluorine-containing resin.
- the fluorine content of the fluororesin is 30 at% or more, preferably 40 at% or more, more preferably 50 at% or more.
- the fluorine content of the fluorine-containing resin is 30 at% or more, the atomic layer deposition inhibiting effect is further increased.
- the upper limit of fluorine content is not specifically limited, The maximum fluorine content which can be taken on the structure of the resin, ie, the fluorine content when perfluorinated, may be used.
- the fluorine content in the fluororesin can be measured by a method known in the art.
- the cross section of the resin is scanned by transmission electron microscope-energy dispersive X-ray analysis (STEM-EDS: Scanning Transmission Electron Microscope- It can be measured by Energy Dispersive Spectroscopy), X-ray photoelectron spectroscopy (XPS).
- STEM-EDS Scanning Transmission Electron Microscope- It can be measured by Energy Dispersive Spectroscopy
- XPS X-ray photoelectron spectroscopy
- the fluorine-containing resin does not have a functional group.
- the functional group is a group having reactivity with other molecules, and examples thereof include ester groups, hydroxyl groups, carboxyl groups, imide groups, amide groups, sulfo groups, amino groups, thiol groups, nitro groups, and phenyl groups. .
- “having no functional group” means that the functional group is not substantially present in the fluororesin, and does not have to be completely zero.
- “Substantially absent” means an amount that does not affect the entire resin even when subjected to an ALD environment.
- the amount of functional groups present in the resin is not particularly limited. , It may be 1 mmol% or less with respect to the whole resin.
- the fluorine-containing resin does not have a functional group, a higher atomic layer deposition inhibiting effect can be exhibited even in ALD film formation at a high temperature (for example, 250 ° C. or higher).
- a high temperature for example, 250 ° C. or higher.
- the functional group is activated under high temperature ALD conditions, and the decomposition of the resin is promoted based on this part. It is thought to decline.
- the presence of the functional group in the fluororesin can be confirmed by a method known in the art, for example, an infrared spectrum.
- the fluororesin has at least one tertiary carbon or quaternary carbon.
- at least one tertiary carbon or quaternary carbon is present in the monomer unit of the fluororesin. Since the fluorine-containing resin has tertiary carbon or quaternary carbon, a higher atomic layer deposition inhibiting effect can be exhibited even in ALD film formation at a high temperature.
- tertiary carbon or quaternary carbon in the fluororesin can be confirmed by a method known in the art, for example, 13 C-NMR (DEPT method: Distorsionless Enhancement by Polarization Transfer). be able to.
- the fluorine-containing resin has a fluorine content reduction rate of 50% or less, preferably 30% or less when exposed to an atomic layer deposition condition of 250 ° C.
- the fluorine content of the fluororesin is preferably 30 at% or more, more preferably 50 at% or more.
- the fluorine content of the fluorine-containing resin is preferably 30 at% or more, more preferably 50 at% or more.
- the lower the rate of decrease of the fluorine content the lower the fluorine content of the fluororesin.
- the decrease rate of the fluorine content is low and the fluorine content is high.
- the fluororesin does not have a functional group and / or may have a tertiary carbon or a quaternary carbon.
- the fluorine-containing resin has a fluorine content of 25 at% or more after being exposed to atomic layer deposition conditions at 250 ° C., preferably 40 at% or more, more preferably 50 at% or more.
- the fluorine-containing resin can exhibit a higher atomic layer deposition effect by having a fluorine content of 25 at% or more after being subjected to such atomic layer deposition conditions.
- the fluorine content is 30 at% or more, more preferably 50 at% or more, as in the above embodiment.
- the fluorine-containing resin does not have a functional group and / or may have tertiary carbon or quaternary carbon.
- the fluorine-containing resin has the following formula (I): X - [(CR 1 2) p -CR 4 R 5 - (CR 2 2) r -CR 6 R 7 - (CR 3 2) q] n -Y ... (I) It is the fluorine-containing resin represented by these.
- X and Y are each independently H, F, or CR 11 3 .
- R 11 is independently H or F.
- X and Y are each independently F or CF 3 .
- R 1 , R 2 and R 3 are each independently H or F, preferably all R 1 , R 2 and R 3 are F.
- R 4 and R 6 are each independently an alkyl group having 1 to 6 carbon atoms (1 to 6 carbon atoms) which may be substituted with H, F, or fluorine.
- the alkyl group having 1 to 6 carbon atoms may be linear or branched, preferably an alkyl group having 1 to 3 carbon atoms, and particularly preferably a methyl group.
- the alkyl group is preferably fully substituted with fluorine, that is, a perfluoroalkyl group is preferred.
- a preferred perfluoroalkyl group is a trifluoromethyl group.
- R 4 and R 6 are preferably F or a perfluoroalkyl group having 1 to 6 carbon atoms, more preferably F or a trifluoromethyl group.
- R 5 and R 7 are each independently an alkyl group having 1 to 6 carbon atoms which may be substituted with fluorine.
- the alkyl group having 1 to 6 carbon atoms which may be substituted with fluorine is preferably a perfluoroalkyl group, more preferably a perfluoroalkyl group having 1 to 3 carbon atoms.
- R 5 and R 7 together are -(O) s- (CR 12 2 ) t- (Where R 12 is H, F, or an alkyl group having 1 to 6 carbon atoms which may be substituted with fluorine, s is an integer from 0 to 2, t is an integer from 1 to 6, In the formula, the order of existence of O and CR 12 2 is not limited to the order of description, and is arbitrary. ) You may form group represented by these.
- R 5 and R 7 form a ring having the following structure with the carbon atom to which they are attached and the — (CR 2 2 ) r — group.
- each unit (O and CR 12 2 ) enclosed in parentheses with s or t is arbitrary in the formula.
- s is 1
- t is 2
- R 12 is preferably F or a perfluoroalkyl group having 1 to 6 carbon atoms, more preferably F or a trifluoromethyl group.
- Preferred — (O) s — (CR 12 2 ) t — is —O—CR 12 2 —O— or — (CF 2 ) a —O— (CF 2 ) b — (CFR 12 ) c — , A is an integer of 0 to 5, b is an integer of 0 to 4, and c is 0 or 1. More preferred — (O) s — (CR 12 2 ) t — is —O—C (CF 3 ) 2 —O— or —O—CF 2 —CF 2 —.
- p, q and r are each independently an integer of 0 or more and 6 or less.
- p and q are integers of 0 or more and 2 or less, and r is 0 or 1.
- n is an arbitrary natural number. Although n is not specifically limited, For example, it may be the range of 5 or more and 10,000 or less.
- Fluorine resin having These can be obtained from DuPont under the trade name “Teflon (registered trademark) AF” and from Asahi Glass Co., Ltd. under the trade name “Cytop (registered trademark)”, respectively.
- the above-mentioned fluororesin does not contain a hydrogen atom. That is, the above-mentioned fluororesin comprises a carbon atom, a fluorine atom, and optionally an oxygen atom.
- the number average molecular weight of the fluorine-containing resin is not particularly limited, but is preferably 10,000 or more, for example, 10,000 to 1,000,000, preferably 20,000 to 500,000.
- a thin film pattern can be satisfactorily formed on a substrate even under severe conditions such as high temperature (for example, 250 ° C. or higher or 300 ° C. or higher). can do.
- the present invention is a method for forming a thin film pattern of an inorganic material on a substrate by an atomic layer deposition method, Forming an atomic layer deposition inhibiting layer pattern on the substrate using the above-described atomic layer deposition inhibiting material composed of the fluorine-containing resin; Next, an atomic layer deposition method is used to form an inorganic material layer in a region where the atomic layer deposition-inhibiting layer is not present, A method is also provided.
- the capacitor 1 manufactured in the present embodiment generally includes a lower electrode 2 as a substrate, an atomic layer deposition inhibition layer 4 formed thereon, and an atomic layer deposition inhibition layer.
- 4 has a dielectric layer 6 and an upper electrode 8 formed on the substrate 2 in order adjacent to each other, and terminal electrodes 10 and 10 'formed at the ends thereof.
- One terminal electrode 10 is electrically connected to the lower electrode 2 and electrically separated from the upper electrode 8.
- the other terminal electrode 10 ′ is electrically connected to the upper electrode 8 and electrically separated from the lower electrode 2.
- a substrate (lower electrode 2) is first prepared.
- the atomic layer deposition inhibition layer 4 is formed on the substrate 2 using a printing technique such as screen printing or ink jet printing at a predetermined location on the substrate 2 with the atomic layer deposition inhibition material composed of the fluororesin (see FIG. 2 (a)).
- the method of forming the atomic layer deposition inhibition layer 4 is not limited to the printing technique described above, and any method that can form the atomic layer deposition inhibition layer by applying an atomic layer deposition inhibition material to a predetermined position of the substrate. If it does not specifically limit.
- the dielectric layer 6 is formed on the substrate 2 on which the atomic layer deposition inhibition layer 4 is formed by using an atomic layer deposition method. At this time, the dielectric layer 6 is not formed on the atomic layer deposition inhibition layer 4 (FIG. 2B).
- the material for forming the dielectric layer 6 is not particularly limited as long as it is insulating.
- AlO x for example, Al 2 O 3
- SiO x for example, SiO 2
- AlTiO x SiTiO x
- HfO x TaO x
- ZrO x HfSiO x
- ZrSiO x TiZrO x
- TiZrWO x TiO x
- SrTiO x PbTiO x
- metal oxides such as SiAlO x; AlN x, SiN a metal oxynitride such as x , AlScN x ; or AlO x N y , SiO x N y , HfSiO x N y , SiC x O y Nz, etc. (x and y are arbitrary numbers) Can be mentioned.
- the upper electrode 8 is formed on the dielectric layer 6 by using an atomic layer deposition method. At this time, the upper electrode 8 is not formed on the atomic layer deposition inhibiting layer 4 (FIG. 2C).
- the material constituting the upper electrode is not particularly limited as long as it is conductive, but Ni, Cu, Al, W, Ti, Ag, Au, Pt, Zn, Sn, Pb, Fe, Cr, Mo, Ru, Pd, Ta and their alloy layers, such as CuNi, AuNi, AuSn, and metal oxides such as TiN, TiAlN, TiON, TiAlON, TaN, and metal oxynitrides can be mentioned, and TiN and TiON are preferred.
- the laminate obtained as described above is cut at an intermediate position of the atomic layer deposition inhibiting layer 4 (FIG. 2 (d)), and finally the terminal electrodes 10, 10 ′ are formed by plating ( 2E), the capacitor 1 of this embodiment is manufactured.
- these films are not formed on the atomic layer deposition inhibition layer 4, and a layer having a desired pattern can be formed.
- a conductive substance adheres on the atomic layer deposition inhibition layer 4 during the formation of the upper electrode 8
- the insulation between the terminal electrode 10 and the upper electrode 8 decreases, and the terminal electrode 10 passes through the terminal electrode 10.
- the present invention is advantageous in that such a possibility can be substantially eliminated.
- nitride for example, TiN
- the present invention is very advantageous because atomic layer deposition is performed under more severe conditions.
- the lower electrode is used as the substrate.
- the present invention is not limited to this, and various substrates such as other conductive substrates, insulating substrates, semiconductor substrates, and the like can be used.
- the present invention is not limited to an embodiment in which the atomic layer deposition inhibition layer is directly formed on the substrate, and other layers may be formed on the substrate.
- a buffer layer may be formed on the lower electrode 2 and an atomic layer deposition inhibition layer may be formed thereon.
- an atomic layer deposition-inhibiting layer composed of a fluorine-containing resin and an inorganic material layer formed by an atomic layer deposition method are usually adjacent to each other on a substrate. Located.
- the present invention is an electronic component comprising a substrate, a fluorine-containing resin layer having a fluorine content of 25 at% or more, and an inorganic material layer formed by atomic layer deposition, An electronic component is also provided in which the fluorine-containing resin layer and the inorganic material layer are adjacent to each other.
- the said adjacent means the state which the fluorine-containing resin layer and the layer of an inorganic material adjoin and are substantially contacting.
- “Substantially in contact” means not only a state of being completely in close contact but also a state in which there is a very small gap (for example, several nm) in which a gas during film formation by ALD cannot enter. Including.
- the nitride is formed by the atomic layer deposition method
- a severe condition for example, a condition of 250 ° C. or higher is required. Therefore, the use of the atomic layer deposition inhibiting material of the present invention is very advantageous. .
- the present invention is an electronic component comprising a substrate, a fluorine-containing resin layer having a fluorine content of 25 at% or more, and a nitride layer,
- the electronic component is characterized in that the fluororesin layer and the nitride layer are adjacent to each other.
- the above-mentioned inorganic material or nitride layer does not substantially exist on the upper surface of the atomic layer deposition inhibition layer (the surface facing the substrate side surface).
- the fluorine content of the fluorine-containing resin layer is preferably such that the fluorine content is 40 at% or more.
- the fluorine-containing resin layer preferably has no ester group, hydroxyl group, carboxyl group and imide group.
- the inorganic material is preferably a nitride.
- the nitride include TiN, AIN, and SiN.
- the fluorine content in the fluorine-containing resin layer is 100 nm from the interface between the fluorine-containing resin layer and the inorganic material (or nitride) layer to the inside of the fluorine-containing resin (for example, the region shown in FIG. 3). It is an average value of fluorine content.
- the electronic component is not limited to the capacitor described above, and may be another electronic component such as a transistor, a circuit board, or a semiconductor device.
- Material A is a fluorine-free resin
- Material B is a fluorine-containing resin having an ester bond in the molecule
- Material C is a fluorine-containing resin having —Si (OH) 3 at the end, and these are comparative examples. is there.
- X-ray photoelectron spectroscopy analysis of the resin-coated portion
- the materials B, D, and E having the high resistance values were subjected to the X-ray photoelectron spectrometer before and after ALD.
- the surface was analyzed by The results are also shown in Table 2 below.
- the measurement location was a spot with a diameter of 2 nm near the center of the location where the lattices intersect.
- the sample after ALD was processed with a focused ion beam (FIB) to expose the cross section.
- FIB focused ion beam
- the average amount of fluorine in the region of 100 nm (see FIG. 3) from the interface between the TiN film and the resin layer in the cross section STEM-EDS measuring apparatus (STEM: JEM-2200FS), EDS detector: JEOL Ltd.) (Dry SD60GV), EDS system: Thermo Fisher Scientific Co., Ltd. (Noran system 7)).
- resins D and E had a fluorine content of 30 at% or more.
- the resin B had a small fluorine content (3 at% or less), and the resin C was almost free of fluorine (below the lower limit of determination).
- the ALD inhibitor material within the scope of the present invention has a very good ALD inhibitory effect. It was also confirmed that the resin having a high ALD inhibitory effect has a high fluorine content even after ALD. Although not described here, it has been confirmed that the same effect can be obtained with ZrOx, SiOx, AlN, SiN, Al, Cu, and Zr.
- Example 2 An AlOx film (raw material: trimethylaluminum; condition: 180 cycles; 250 ° C.) was formed on an approximately 10 cm square Al substrate using the ALD method. Next, in the same manner as in Example 1, a lattice pattern was formed by screen printing using resin D and resin D ′ in which the end of resin D was COOH. Next, a TiN film was formed by using the ALD method (raw materials: tetrakisdimethylaminotitanium and ammonia; conditions: 100 cycles; 310 ° C.).
- the resin D within the scope of the present invention had a good ALD inhibitory effect even when the film was formed at 310 ° C.
- the resin D ′ having a COOH group at the terminal had a large amount of Ti on the resin surface after ALD.
- the present invention is not bound by any theory, it is considered that in the resin D ′, the terminal COOH becomes an active site, and the deterioration or decomposition of the resin proceeds, so that a sufficient ALD inhibitory effect cannot be obtained.
- PTFE has a high fluorine content, but it contains only primary and secondary carbons, so depolymerization is likely to occur during ALD. it is conceivable that.
- the atomic layer deposition-inhibiting material of the present invention is suitably used in the production of various electronic components.
- Capacitor 2 ... Board (lower electrode) 4 ... Atomic layer deposition inhibition layer 6 ... Dielectric layer 8 ... Upper electrode 10, 10 '... Terminal electrode 12 ... Aluminum substrate 14 ... AIO x layer 16 ... TiN layer 18 ... Resin layer 20 ... Measurement region
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Abstract
Description
X-[(CR1 2)p-CR4R5-(CR2 2)r-CR6R7-(CR3 2)q]n-Y ・・・(I)
[式中:
XおよびYが、それぞれ独立して、H、FまたはCR11 3であり;
R11は、それぞれ独立して、HまたはFであり;
R1、R2およびR3は、それぞれ独立して、HまたはFであり;
R4およびR6は、それぞれ独立して、H、F、またはフッ素により置換されていてもよい炭素数1~6個のアルキル基であり;
R5およびR7は、それぞれ独立して、フッ素により置換されていてもよい炭素数1~6個のアルキル基であるか、あるいは
R5およびR7は、一緒になって、
-(O)s-(CR12 2)t-
(式中、
R12は、H、F、またはフッ素により置換されていてもよい炭素数1~6個のアルキル基であり、
sは0~2の整数であり、tは1~6の整数であり、
式中、OおよびCR12 2の存在順序は、記載の順に限定されず、任意である。)
で表される基を形成してもよく;
p、qおよびrは、それぞれ独立して、0~6の整数であり;
nは、任意の自然数である。]
で表される含フッ素樹脂から構成される原子層堆積阻害材料が提供される。
基板上に、上記の原子層堆積阻害材料を用いて、原子層堆積阻害層のパターンを形成すること、
次いで、原子層堆積法により、原子層堆積阻害層が存在しない領域に、無機材料の層を形成すること、
を含む方法が提供される。
前記含フッ素樹脂層と、前記無機材料の層とが隣接して位置することを特徴とする電子部品が提供される。
前記含フッ素樹脂層と、前記窒化物の層とが隣接して位置することを特徴とする電子部品が提供される。
X-[(CR1 2)p-CR4R5-(CR2 2)r-CR6R7-(CR3 2)q]n-Y
・・・(I)
で表される含フッ素樹脂である。
-(O)s-(CR12 2)t-
(式中、
R12は、H、F、またはフッ素により置換されていてもよい炭素数1~6個のアルキル基であり、
sは0以上2以下の整数であり、tは1以上6以下の整数であり、
式中、OおよびCR12 2の存在順序は、記載の順に限定されず、任意である。)
で表される基を形成してもよい。
基板上に、上記した含フッ素樹脂から構成される原子層堆積阻害材料を用いて、原子層堆積阻害層のパターンを形成すること、
次いで、原子層堆積法により、原子層堆積阻害層が存在しない領域に、無機材料の層を形成すること、
を含む方法も提供する。
前記含フッ素樹脂層と、前記無機材料の層とが隣接して位置することを特徴とする電子部品をも提供する。
前記含フッ素樹脂層と、前記窒化物の層とが隣接して位置することを特徴とする電子部品を提供する。
・樹脂塗布部の電気抵抗値
成膜後の樹脂塗布部の電気抵抗値(樹脂塗布部の格子により形成された隣接するセル間の抵抗値)を二端子法で測定した。結果を下記表2に示す。
また、上記の抵抗値が高かった材料B、DおよびEについて、ALD前後に、樹脂塗布部を、X線光電子分光装置により表面分析した。結果を下記表2に併せて示す。測定箇所は、格子が交わる箇所の中心付近の直径2nmのスポットとした。
ALD後の試料を、収束イオンビーム(FIB:Focused Ion Beam)により加工して、断面を露出させた。断面のTiN膜と樹脂層の界面から100nmの領域(図3参照)の平均フッ素量を、STEM-EDS測定装置(STEM:日本電子株式会社(JEM-2200FS)、EDS検出器:日本電子株式会社(ドライSD60GV)、EDSシステム:サーモフィッシャーサイエンティフィック株式会社(Noran system7))により測定した。
約10cm角のAl基板上に、ALD法を用いて、AlOx(原料:トリメチルアルミニウム;条件:180サイクル;250℃)を成膜した。次いで、実施例1と同様に、樹脂Dおよび樹脂Dの末端をCOOHとした樹脂D’を用いて、スクリーン印刷法により格子状パターンを形成した。次いで、ALD法を用いてTiN膜を成膜した(原料:テトラキスジメチルアミノチタンおよびアンモニア;条件:100サイクル;310℃)。
ALD阻害材料としてフッ素含有量が約50at%であるポリテトラフルオロエチレン(PTFE)を用い、ALD法の温度条件を変える以外は(低温:約235℃;高温:約280℃)実施例1と同様にして、AlOxおよびTiNを連続成膜した。
2…基板(下部電極)
4…原子層堆積阻害層
6…誘電体層
8…上部電極
10,10’…端子電極
12…アルミニウム基板
14…AIOx層
16…TiN層
18…樹脂層
20…測定領域
Claims (20)
- フッ素含有量が30at%以上であり、少なくとも1つの第3級炭素もしくは第4級炭素を有し、かつ、エステル基、ヒドロキシル基、カルボキシル基およびイミド基を有しない含フッ素樹脂から構成される原子層堆積阻害材料。
- フッ素含有量が50at%以上であることを特徴とする、請求項1に記載の原子層堆積阻害材料。
- フッ素含有量が30at%以上であり、250℃の原子層堆積条件下に曝された場合のフッ素含有量の減少率が、50%以下である含フッ素樹脂から構成される原子層堆積阻害材料。
- フッ素含有量の減少率が、30%以下であることを特徴とする、請求項3に記載の原子層堆積阻害材料。
- 250℃の原子層堆積条件下に曝された後のフッ素含有量が25at%以上である含フッ素樹脂から構成される原子層堆積阻害材料。
- 250℃の原子層堆積条件下に曝された後のフッ素含有量が40at%以上であることを特徴とする、請求項5に記載の原子層堆積阻害材料。
- 下記式(I):
X-[(CR1 2)p-CR4R5-(CR2 2)r-CR6R7-(CR3 2)q]n-Y
(I)
[式中:
XおよびYが、それぞれ独立して、H、FまたはCR11 3であり;
R11は、それぞれ独立して、HまたはFであり;
R1、R2およびR3は、それぞれ独立して、HまたはFであり;
R4およびR6は、それぞれ独立して、H、F、またはフッ素により置換されていてもよい炭素数1~6個のアルキル基であり;
R5およびR7は、それぞれ独立して、フッ素により置換されていてもよい炭素数1~6個のアルキル基であるか、あるいは
R5およびR7は、一緒になって、
-(O)s-(CR12 2)t-
(式中、
R12は、H、F、またはフッ素により置換されていてもよい炭素数1~6個のアルキル基であり、
sは0~2の整数であり、tは1~6の整数であり、
式中、OおよびCR12 2の存在順序は、記載の順に限定されず、任意である。)
で表される基を形成してもよく;
p、qおよびrは、それぞれ独立して、0~6の整数であり;
nは、任意の自然数である。]
で表される含フッ素樹脂から構成される原子層堆積阻害材料。 - 含フッ素樹脂が、
R1およびR3がFであり、pが1または2であり、
R4およびR6が、Fであり、
R5およびR7が、一緒になって、-O-CF2-CF2-または-O-CF(CF3)2-O-を形成し、
qが0または1であり、
rが0である
式(I)で表される樹脂であることを特徴とする、請求項7に記載の原子層堆積阻害材料。 - 含フッ素樹脂が、水素原子を含まないことを特徴とする、請求項1~8のいずれかに記載の原子層堆積阻害材料。
- 基板上に無機材料の薄膜のパターンを原子層堆積法により形成する方法であって、
基板上に、請求項1~9のいずれかに記載の原子層堆積阻害材料を用いて、原子層堆積阻害層のパターンを形成すること、
次いで、原子層堆積法により、原子層堆積阻害層が存在しない領域に、無機材料の層を形成すること、
を含む方法。 - 基板と、フッ素含有量が25at%以上である含フッ素樹脂層と、原子層堆積法により形成された無機材料の層とを有して成る電子部品であって、
前記含フッ素樹脂層と、前記無機材料の層とが隣接して位置することを特徴とする電子部品。 - フッ素含有量が40at%以上であることを特徴とする、請求項11に記載の電子部品。
- フッ素樹脂層に、エステル基、ヒドロキシル基、カルボキシル基およびイミド基が存在しないことを特徴とする請求項11または12に記載の電子部品。
- 無機材料が、TiN、AINまたはSiNであることを特徴とする、請求項11~13のいずれかに記載の電子部品。
- 基板と、フッ素含有量が25at%以上である含フッ素樹脂層と、窒化物の層とを有して成る電子部品であって、
前記含フッ素樹脂層と、前記窒化物の層とが隣接して位置することを特徴とする電子部品。 - フッ素含有量が40at%以上であることを特徴とする、請求項15に記載の電子部品。
- フッ素樹脂層に、エステル基、ヒドロキシル基、カルボキシル基およびイミド基が存在しないことを特徴とする請求項15または16に記載の電子部品。
- 窒化物が、TiN、AINまたはSiNであることを特徴とする、請求項15~17のいずれかに記載の電子部品。
- 請求項10に記載の方法を用いて製造された、請求項11~18のいずれかに記載の電子部品。
- コンデンサである、請求項11~19のいずれかに記載の電子部品。
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KR1020177025827A KR102053509B1 (ko) | 2015-03-13 | 2016-03-08 | 원자층 퇴적 저해 재료 |
JP2017506464A JP6493513B2 (ja) | 2015-03-13 | 2016-03-08 | 原子層堆積阻害材料 |
CN201680015281.5A CN107406975B (zh) | 2015-03-13 | 2016-03-08 | 原子层沉积抑制材料 |
US15/689,187 US10508337B2 (en) | 2015-03-13 | 2017-08-29 | Atomic layer deposition-inhibiting material |
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TWI627192B (zh) | 2018-06-21 |
TW201638128A (zh) | 2016-11-01 |
KR20170117531A (ko) | 2017-10-23 |
JP2019135325A (ja) | 2019-08-15 |
JP6756388B2 (ja) | 2020-09-16 |
KR102053509B1 (ko) | 2019-12-06 |
US10508337B2 (en) | 2019-12-17 |
CN107406975B (zh) | 2019-07-05 |
US20170356086A1 (en) | 2017-12-14 |
JPWO2016147941A1 (ja) | 2017-12-21 |
CN107406975A (zh) | 2017-11-28 |
JP6493513B2 (ja) | 2019-04-03 |
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