JP6423952B2 - コンデンサおよびその製造方法 - Google Patents
コンデンサおよびその製造方法 Download PDFInfo
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- JP6423952B2 JP6423952B2 JP2017510913A JP2017510913A JP6423952B2 JP 6423952 B2 JP6423952 B2 JP 6423952B2 JP 2017510913 A JP2017510913 A JP 2017510913A JP 2017510913 A JP2017510913 A JP 2017510913A JP 6423952 B2 JP6423952 B2 JP 6423952B2
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- 239000003990 capacitor Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims description 60
- 238000009792 diffusion process Methods 0.000 claims description 48
- 230000002265 prevention Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000231 atomic layer deposition Methods 0.000 claims description 20
- 238000004804 winding Methods 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 16
- 229910008651 TiZr Inorganic materials 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910015802 BaSr Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910002367 SrTiO Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 description 24
- 239000002131 composite material Substances 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 13
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 12
- 238000005530 etching Methods 0.000 description 8
- 238000004549 pulsed laser deposition Methods 0.000 description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910005793 GeO 2 Inorganic materials 0.000 description 4
- -1 TiN Chemical class 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910002711 AuNi Inorganic materials 0.000 description 2
- 229910003336 CuNi Inorganic materials 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- 229910003839 Hf—Si Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010037 TiAlN Inorganic materials 0.000 description 2
- 229910010282 TiON Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910008332 Si-Ti Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- 229910006749 Si—Ti Inorganic materials 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910003114 SrVO Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910007729 Zr W Inorganic materials 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 229910007735 Zr—Si Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910021435 silicon-carbon complex Inorganic materials 0.000 description 1
- 239000011867 silicon-carbon complex material Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- PMTRSEDNJGMXLN-UHFFFAOYSA-N titanium zirconium Chemical compound [Ti].[Zr] PMTRSEDNJGMXLN-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/32—Wound capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/015—Special provisions for self-healing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
- H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
拡散防止層、下部電極層、誘電体層、よび上部電極層を有して成る巻回型コンデンサであって、拡散防止層、下部電極層、誘電体層、および上部電極層の順に積層された積層体が、前記上部電極を内側にして巻回され、前記拡散防止層が原子層堆積法により形成されている巻回型コンデンサが提供される。
上記の巻回型コンデンサの製造方法であって、
基板上に犠牲層を形成し、
犠牲層上に、原子層堆積法を用いて拡散防止層を形成し、
拡散防止層上に、下部電極層、誘電体層および上部電極層を順次形成して積層体を得、
犠牲層を除去することにより積層体を巻回すること
を特徴とする、製造方法が提供される。
4インチ四方のシリカ基板を準備し、その上に真空蒸着法を用いて、厚み20nmのGe層を形成した。得られたGe層を、N2/O2雰囲気下、150℃の温度で酸化させることにより、GeO2の犠牲層を形成した。得られた犠牲層の上に、拡散防止層として、厚み7nmのAl2O3層を、ALD法を用いて形成した。次いで、得られた拡散防止層の上に、密着層として厚み7nmのTiOx層を、スパッタ法を用いて形成し、さらにその上に下部電極層として、厚み25nmのPt層を、スパッタ法を用いて形成した。
Al2O3の拡散防止層を設けないこと以外は、実施例1と同様にして積層体を作製した。この積層体を、実施例1と同様にして、過酸化水素水によるエッチングを行ったが、積層体は巻回しなかった。
Al2O3の拡散防止層(厚み7nm)をスパッタ法を用いて形成したこと以外は、実施例1と同様にして積層体を作製した。この積層体を、実施例1と同様にして、過酸化水素水によるエッチングを行ったが、積層体は巻回しなかった。
2…拡散防止層
4…下部電極層
6…誘電体層
8…上部電極層
9…第2誘電体層
10…積層体
12…本体部
14…引き出し部
16…第1端子
18…第2端子
20…犠牲層
22…基板
Claims (8)
- 拡散防止層、下部電極層、誘電体層、および上部電極層を有して成る巻回型コンデンサであって、
拡散防止層、下部電極層、誘電体層、および上部電極層の順に積層された積層体が、前記上部電極層を内側にして巻回され、
前記拡散防止層が原子層堆積法により形成されており、
前記拡散防止層が、酸化アルミニウムから形成されており、
前記下部電極層が白金から形成され、
前記上部電極層がクロムから形成され、
前記誘電体層がチタン系ペロブスカイト型複合酸化物から形成されている
巻回型コンデンサ。 - 拡散防止層の厚みが、5〜10nmであることを特徴とする、請求項1に記載の巻回型コンデンサ。
- 前記チタン系ペロブスカイト型複合酸化物が、BaTiO3、SrTiO3、CaTiO3、(BaSr)TiO3、(BaCa)TiO3、(SrCa)TiO3、Ba(TiZr)O3、Sr(TiZr)O3、Ca(TiZr)O3、(BaSr)(TiZr)O3、(BaCa)(TiZr)O3、または(SrCa)(TiZr)O3であることを特徴とする、請求項1または2に記載の巻回型コンデンサ。
- 拡散防止層と下部電極層の間、または上部電極層の上に、さらに第2の誘電体層が存在することを特徴とする請求項1〜3のいずれかに記載の巻回型コンデンサ。
- 誘電体層と上部電極層の間に、さらに界面層が存在することを特徴とする請求項1〜4のいずれかに記載の巻回型コンデンサ。
- 請求項1に記載の巻回型コンデンサの製造方法であって、
基板上に犠牲層を形成し、
犠牲層上に、原子層堆積法を用いて拡散防止層を形成し、
拡散防止層上に、下部電極層、誘電体層、および上部電極層を順次形成して積層体を得、
犠牲層を除去することにより積層体を巻回すること
を含む、製造方法。 - 拡散防止層と下部電極層の間に、さらに密着層を形成することを特徴とする請求項6
に記載の製造方法。 - 誘電体層と上部電極層の間に、さらに界面層を形成することを特徴とする請求項6または7に記載の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2014/072853 WO2016031077A1 (en) | 2014-08-26 | 2014-08-26 | Capacitor and process for producing thereof |
Publications (2)
Publication Number | Publication Date |
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JP2017529698A JP2017529698A (ja) | 2017-10-05 |
JP6423952B2 true JP6423952B2 (ja) | 2018-11-14 |
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JP2017510913A Expired - Fee Related JP6423952B2 (ja) | 2014-08-26 | 2014-08-26 | コンデンサおよびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20170162332A1 (ja) |
EP (1) | EP3186815B1 (ja) |
JP (1) | JP6423952B2 (ja) |
CN (1) | CN107077967A (ja) |
WO (1) | WO2016031077A1 (ja) |
Families Citing this family (5)
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DE102017111463B4 (de) * | 2017-05-24 | 2022-11-17 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Aufgerollte energiespeicherbauelemente und verfahren zu ihrer herstellung |
DE102017214638B4 (de) * | 2017-08-22 | 2021-12-02 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Verfahren zur Herstellung von dreidimensionalen Mikro-Bauelementen und dreidimensionale Mikro-Bauelemente |
CN110760801B (zh) * | 2018-07-27 | 2021-09-28 | 浙江清华柔性电子技术研究院 | 储能陶瓷薄膜及其制备方法 |
CN110970557A (zh) * | 2018-09-28 | 2020-04-07 | 中芯国际集成电路制造(上海)有限公司 | 电容器件及其形成方法 |
US11823870B2 (en) | 2019-08-13 | 2023-11-21 | Applied Materials, Inc. | PEALD titanium nitride with direct microwave plasma |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US6249423B1 (en) * | 1998-04-21 | 2001-06-19 | Cardiac Pacemakers, Inc. | Electrolytic capacitor and multi-anodic attachment |
DE10159415B4 (de) * | 2001-12-04 | 2012-10-04 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren zur Herstellung einer Mikrospule und Mikrospule |
WO2006014753A1 (en) * | 2004-07-23 | 2006-02-09 | Sundew Technologies, Llp | Capacitors with high energy storage density and low esr |
KR101120872B1 (ko) * | 2007-04-20 | 2012-02-27 | 후지쯔 가부시끼가이샤 | 전극박 및 그 제조 방법과 전해 컨덴서 |
EP2023357B1 (en) | 2007-08-07 | 2011-05-25 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | A method for fabricating a capacitor and a capacitor |
JP4510116B2 (ja) * | 2008-06-20 | 2010-07-21 | 富士通株式会社 | キャパシタの製造方法、構造体、及びキャパシタ |
DE102009027745A1 (de) * | 2008-07-16 | 2010-01-21 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Peltier-Seebeck basiertes thermoelektrisches Bauelement und Verfahren zu seiner Herstellung |
US20140023497A1 (en) * | 2012-07-19 | 2014-01-23 | General Electric Company | Cooled turbine blade tip shroud with film/purge holes |
US9018050B2 (en) * | 2012-10-11 | 2015-04-28 | The Board Of Trustees Of The University Of Illinois | Rolled-up transmission line structure for a radiofrequency integrated circuit (RFIC) |
DE102012221932A1 (de) * | 2012-11-30 | 2014-06-05 | Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. | Aufgerollte, dreidimensionale Feldeffekttransistoren und ihre Verwendung in der Elektronik, Sensorik und Mikrofluidik |
US20170213648A1 (en) * | 2014-08-01 | 2017-07-27 | Western Michigan University Research Foundation | Self-supported electronic devices |
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2014
- 2014-08-26 WO PCT/JP2014/072853 patent/WO2016031077A1/en active Application Filing
- 2014-08-26 JP JP2017510913A patent/JP6423952B2/ja not_active Expired - Fee Related
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CN107077967A (zh) | 2017-08-18 |
EP3186815B1 (en) | 2019-06-26 |
US20170162332A1 (en) | 2017-06-08 |
JP2017529698A (ja) | 2017-10-05 |
WO2016031077A1 (en) | 2016-03-03 |
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