WO2015096819A1 - 工艺腔室以及半导体加工设备 - Google Patents

工艺腔室以及半导体加工设备 Download PDF

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Publication number
WO2015096819A1
WO2015096819A1 PCT/CN2014/095338 CN2014095338W WO2015096819A1 WO 2015096819 A1 WO2015096819 A1 WO 2015096819A1 CN 2014095338 W CN2014095338 W CN 2014095338W WO 2015096819 A1 WO2015096819 A1 WO 2015096819A1
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Prior art keywords
chamber
reaction chamber
ring body
reaction
wafer
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PCT/CN2014/095338
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English (en)
French (fr)
Inventor
吕峰
张风港
赵梦欣
丁培军
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
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Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Priority to US15/109,050 priority Critical patent/US10347470B2/en
Priority to KR1020167020923A priority patent/KR101841201B1/ko
Priority to SG11201605335PA priority patent/SG11201605335PA/en
Publication of WO2015096819A1 publication Critical patent/WO2015096819A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber

Definitions

  • the present invention relates to the field of semiconductor device manufacturing, and in particular to a process chamber and a semiconductor processing apparatus.
  • PVD Physical Vapor Deposition
  • the basic principle of Physical Vapor Deposition is to evaporate a metal, metal alloy or compound under vacuum and deposit it on the surface of the substrate to form a film with special functions.
  • the main methods of physical vapor deposition include vacuum evaporation, plasma sputtering coating, arc plasma coating, ion plating, and molecular beam epitaxy.
  • plasma sputter coating is currently the most representative and widely used physical vapor deposition technology.
  • the process chamber is usually a vacuum environment, and a process gas is supplied to the process chamber and excited to form a plasma, and the plasma bombards the target.
  • the sputtered target material is deposited on the surface of the wafer to form the film required for the process.
  • the uniformity of the film surface across the wafer is an extremely important indicator of the process, and closely related to this index is the distribution of electromagnetic fields, thermal fields and gas fields on and near the semiconductor wafer. Therefore, improving the uniformity of electromagnetic field, thermal field and airflow field is one of the important means to improve process uniformity.
  • FIG. 1 is a side cross-sectional view of a prior art process chamber.
  • Figure 2 is an enlarged front elevational view of the area I of Figure 1.
  • the process chamber includes a cavity 106, a reaction chamber 118, an upper electrode chamber 111, a lifting mechanism, and a thimble mechanism.
  • the reaction chamber 118 is located at the top of the cavity 106 for processing the wafer;
  • the lifting mechanism includes a base 110, a base lifting shaft 108, and a base driving source (not shown), wherein the base 110 is used.
  • the carrier wafer 112 is connected to the base driving source through the base lifting shaft 108, and the base driving source is used to drive the base lifting
  • the shaft 108 is linearly moved in the vertical direction to achieve its vertical movement, thereby causing the base 110 to rise to the inside of the reaction chamber 118 or to the inside of the chamber 106.
  • a through hole penetrating the thickness of the top wall is provided at an upper surface of the top wall of the cavity 106 and corresponding to the reaction chamber 118, and the susceptor 110 enters the inside of the reaction chamber 118 through the through hole.
  • a liner ring assembly is also provided within the reaction chamber 118, the liner ring assembly including a lower liner ring 116 and an upper liner ring 117, the upper liner ring 117 being located on the inside of the lower liner ring 116, and both covering the entire reaction chamber 118 a sidewall surface for preventing contamination of the sidewalls.
  • a pressure ring 115 is also disposed within the reaction chamber 118 for securing the wafer 112 to the base 110 by its own weight when the base 110 is raised to a process position within the reaction chamber 118; and, in the lower liner 116 The lower end is provided with a bent portion that is bent inward from the lower end of the lower liner ring 116 and extends to the bottom of the pressure ring 115 for supporting the pressure ring 115 when the base 110 is moved out of the reaction chamber 118.
  • a film opening 102 is disposed on the sidewall of the cavity 106 for moving the wafer 112 into or out of the cavity 106;
  • the thimble mechanism is disposed within the cavity 106 and includes at least three thimbles 105, a ejector lift shaft 107 and a thimble drive a source (not shown), at least three thimbles 105 are coupled to the thimble drive source via a ejector lift shaft 107;
  • the ejector drive source is configured to drive the ejector lift shaft 107 to move linearly in the vertical direction to achieve its vertical orientation
  • the upper electrode cavity 111 is disposed at the top of the reaction chamber 118, and a ceramic ring 114 is disposed between the upper electrode cavity 111 and the reaction chamber 118 for electrically insulating the two. Further, a target 113 is disposed on a lower surface of the bottom wall of the upper electrode cavity 111, and a magnetron 104 and a magnetic force for driving the magnetron 104 to rotate relative to the surface of the target 113 are disposed in the upper electrode cavity 111. Control the drive mechanism. Further, an air inlet 103 is provided on the side wall of the cavity 106 and below the film opening 102 for conveying the process gas into the cavity 106.
  • the flow of the process gas is as indicated by the arrows in Figures 1 and 2, and the process gas diffuses from one side of the cavity 106 to the other side, straight To fill the entire cavity 106, during which a portion of the process gas flows into the interior of the reaction chamber 118 via the gap between the press ring 115 and the curved portion of the lower liner ring 116 to be excited to form a plasma during the process.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a process chamber and a semiconductor processing apparatus which can increase the speed of process gas entering the reaction chamber and control the flow rate of the process gas participating in the process. Accuracy and uniformity of distribution of process gases in the reaction chamber.
  • a process chamber that includes a reaction chamber, an air intake system, and a wafer transfer device, wherein the reaction chamber is disposed within the process chamber for processing a wafer;
  • An intake system for supplying a process gas to the reaction chamber; the wafer transfer device for transferring a wafer into the reaction chamber; and a liner ring assembly disposed within the reaction chamber, the liner assembly
  • the structure is configured to form a flow-through chamber between it and an inner sidewall of the reaction chamber to uniformly transport process gas from the intake system into the reaction chamber through the flow-sharing chamber.
  • the backing ring assembly comprises an upper ring body and a lower ring body, wherein the upper ring body is located under the An inner side of the ring body with an annular gap therebetween, the annular gap communicating with the interior of the reaction chamber; an upper annular horizontal portion disposed on the outer peripheral wall of the upper ring body, the lower ring body a lower annular horizontal portion is disposed on the outer peripheral wall, and an annular vertical portion is disposed therebetween, and the upper annular horizontal portion, the lower annular horizontal portion, the annular vertical portion, and the inner side wall of the reaction chamber are formed And a plurality of radial through holes are uniformly distributed on the annular vertical portion, and the radial through holes communicate with the uniform flow chamber and the annular gap, respectively.
  • the number of the reaction chambers is one.
  • each reaction chamber constitutes an independent process environment; the number of the intake systems and the reaction chamber The quantities correspond and the process gases are delivered to the reaction chamber in a one-to-one correspondence.
  • an intake passage is formed in a side wall of the reaction chamber, an intake end of the intake passage is connected to the intake system, and an outlet end of the intake passage is disposed at an inner side of the reaction cabin On the wall and in communication with the flow mixing chamber.
  • the intake end of the intake passage is located at the top of the reaction chamber.
  • the diameter of the radial through hole ranges from 0.5 to 2 mm.
  • the upper ring body, the upper annular horizontal portion and the annular vertical portion are integrally formed; the lower ring body and the lower annular horizontal portion are integrally formed; or the upper ring body and The upper annular horizontal portion is integrally formed; the lower ring body, the lower annular horizontal portion and the annular vertical portion are integrally formed.
  • the present invention further provides a semiconductor processing apparatus comprising: a process chamber for processing a wafer; a degassing chamber for removing moisture on the wafer; and a pre-cleaning chamber for Removing residues on the surface of the wafer; transferring chambers respectively connected to the process chamber, the degassing chamber and the pre-cleaning chamber, and having a robot inside for transferring the wafers separately To each of the chambers; and, the process chamber may employ the process chamber provided by any of the above aspects of the invention.
  • the process chamber is plural.
  • the present invention provides a process chamber in which a liner ring assembly is disposed in a reaction chamber, and the liner assembly utilizes a specific structure to form a flow chamber between the inner side wall of the reaction chamber for uniformizing process gas from the intake system
  • the ground is transported into the reaction chamber, which allows the process gas to directly enter the reaction chamber through the flow chamber, thereby not only increasing the speed of the process gas entering the reaction chamber, but also the process gas output from the intake system cannot reach the reaction chamber.
  • the problem inside can be used to more accurately control the flow rate of the process gas participating in the process, thereby contributing to the process result.
  • the process chamber provided by the invention does not need to additionally provide a flow distribution device in the reaction chamber, thereby not only eliminating the modification of the existing chamber structure, but also simplifying the chamber structure, thereby reducing the manufacturing cost of the process chamber.
  • the process gas from the intake system can be uniformly transported into the reaction chamber, so that the distribution uniformity of the process gas in the reaction chamber can be improved, and the process uniformity can be improved.
  • the semiconductor processing apparatus provided by the present invention can improve the speed of the process gas entering the reaction chamber, the accuracy of controlling the flow rate of the process gas participating in the process, and the process gas in the reaction chamber by adopting the process chamber provided by the present invention.
  • Uniform distribution which not only improves process efficiency, improves process results, but also improves process uniformity.
  • Figure 1 is a side cross-sectional view of a prior art process chamber
  • Figure 2 is an enlarged front elevational view of the area I of Figure 1;
  • 3A is a cross-sectional view of a process chamber according to Embodiment 1 of the present invention.
  • Figure 3B is an enlarged view of the area I in Figure 3A;
  • Figure 3C is a cross-sectional view taken along line A-A of Figure 3A;
  • Figure 3D is a perspective view of the upper liner ring of the process chamber of Figure 3A;
  • 3E is a cross-sectional view of the process chamber according to the first embodiment of the present invention when loading and unloading a wafer;
  • FIG. 4 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention.
  • a process chamber according to Embodiment 1 of the present invention includes a reaction chamber 210, an air intake system, and a wafer transfer device.
  • the number of the reaction chambers 210 is one, which is disposed in the process chamber for processing the wafer.
  • the process chamber is surrounded by a cavity 20, and at the top of the cavity 20 is provided an annular chamber 21, which constitutes a reaction chamber 210.
  • An air intake system (not shown) is used to supply process gas to the reaction chamber 210.
  • FIG. 3B is an enlarged view of the area I in FIG. 3A.
  • Figure 3C is a cross-sectional view taken along line A-A of Figure 3A.
  • a liner ring assembly is disposed within the reaction chamber 210, the liner assembly being configured to form a flow-through chamber between it and the inner sidewall of the reaction chamber 210 for The process gas of the intake system is uniformly delivered into the reaction chamber 210.
  • the structure of the backing ring assembly is specifically: the backing ring assembly includes an upper ring body 25 and a lower ring body 24, and the upper ring body 25 is located inside the lower ring body 24, and in the radial direction There is an annular gap 261 that communicates with the interior of the reaction chamber 210. Further, an upper annular horizontal portion 251 is provided on the outer peripheral wall of the upper ring body 25, and a lower annular horizontal portion 241 is provided on the outer peripheral wall of the lower ring body 24 with an annular vertical portion 27 disposed therebetween.
  • the annular horizontal portion 251, the lower annular horizontal portion 241, and the annular vertical portion 27 form a merging chamber 26 with the inner side wall of the reaction chamber 210; and a plurality of radial through holes 271 are evenly distributed on the annular vertical portion 27, The through holes 271 are respectively in communication with the merging chamber 26 and the annular gap 261.
  • an intake passage 22 is formed in the side wall of the reaction chamber 210, and the intake end 222 of the intake passage 22 is connected to the intake system through the joint 23, and the intake passage 22 is discharged.
  • the gas end 221 is disposed on the inner side wall of the reaction chamber 210 and is in communication with the flow mixing chamber 26.
  • the process gas from the intake system flows into the flow chamber 26 through the intake passage 22, and diffuses to the periphery until it fills the flow chamber 26, and then uniformly flows into the annular gap 261 from each of the radial through holes 271. Inside, it finally flows into the reaction chamber 210 along the annular gap 261.
  • the intake end 222 of the intake passage is located at the top of the reaction chamber 210, which not only saves the peripheral footprint of the process chamber, but also facilitates connection to the intake system.
  • the backing ring assembly used in the present embodiment forms a flow chamber 26 between the upper annular horizontal portion 251, the lower annular horizontal portion 241 and the annular vertical portion 27 and the inner side wall of the reaction chamber 210, and will come from
  • the process gas of the intake system is uniformly delivered into the reaction chamber 210. This allows the process gas to pass directly into the reaction chamber through the vortex chamber 26, thereby not only increasing the speed at which the process gas enters the reaction chamber 210, but also the problem that the process gas output from the intake system cannot all reach the reaction chamber. Thereby, the flow rate of the process gas participating in the process can be controlled more accurately, thereby contributing to the process result.
  • the process chamber provided in the embodiment does not need to additionally provide a shimming device in the reaction chamber. Therefore, it is not only necessary to modify the existing chamber structure, but also to simplify the structure of the chamber, thereby reducing the manufacturing cost of the process chamber.
  • the convection chamber 26 the air flow can be made to play a role of transition and buffer, and then the process gas is uniformly transported into the reaction chamber by using the respective radial through holes 271, so that the distribution of the process gas in the reaction chamber can be improved. Sex, which in turn can improve process uniformity.
  • the annular wall composed of the lower ring body 24 and the upper ring body 25 should be able to cover the side wall surface of the entire reaction chamber 210 to protect the side wall of the reaction chamber 210, thereby preventing it from being prevented. Attach contaminants.
  • the upper end of the upper ring body 25 should not be lower than the top end of the inner peripheral wall of the annular body 21, and the lower end of the upper ring body 25 is lower than the upper end of the lower ring body 24, thereby achieving the side wall surface covering the entire reaction chamber 210.
  • the upper end of the upper ring body 25 is higher than the through hole. 271, and the upper end of the lower ring body 24 is lower than the radial through hole 271.
  • the lower ring body 24 and the upper ring body 25 are preferably detachably connected to the reaction chamber 210 for convenient cleaning.
  • the lower ring body 24 and the lower annular horizontal portion 241 are integrally formed, that is, the two are in an integrated structure; the upper ring body 25, the upper annular horizontal portion 251 and the annular vertical portion 27 are integrated.
  • the molding method is made, that is, the three are in a unitary structure, as shown in Fig. 3D.
  • the annular upper portion 27 can be fixed only to the lower annular horizontal portion 241, so that the upper ring body 25 and the lower ring body 24 can be assembled, thereby being fabricated by integral molding.
  • the particular structure of the ring body 25 and lower ring body 24 for forming the flow chamber 26 facilitates the processing and assembly of the annular assembly.
  • the upper ring body 25 and the upper annular horizontal portion 251 may also be integrally formed; the lower ring body 24, the lower annular horizontal portion 241 and the annular vertical portion 27 are integrally formed. Way to make.
  • the diameter of the radial through hole 271 it is preferable to enable the process gas to flow out from the respective radial through holes 271 after filling the directional flow chamber 26, so that the process gas can uniformly flow into the reaction chamber 210 from the periphery.
  • the diameter of the radial through hole 271 can be designed to be in the range of 0.5 to 2 mm.
  • a flange is formed at a lower portion of the inner side wall of the reaction chamber 210, and the lower ring body 24 is overlapped on the flange by the lower annular horizontal portion 241; the upper end of the annular vertical portion 27 and the upper annular horizontal portion 251
  • the lower end of the annular vertical portion 27 is supported by the lower annular horizontal portion 241, and the upper annular horizontal portion 251, the annular vertical portion 27, and the lower annular horizontal portion 241 are fixedly connected to the flange on the inner side wall of the reaction chamber 210 by screws.
  • the backing ring assembly is fixed in the reaction chamber 210.
  • the spacer ring assembly may be fixed in any other manner, and the present invention is not particularly limited thereto.
  • a wafer transfer device is used to transfer the wafer into the reaction chamber 210.
  • the wafer transfer apparatus includes a lift base 28 and a thimble unit 29.
  • the lifting base 28 is disposed in the process chamber and is located below the reaction chamber 210, and the lifting base 28 passes through the vertical side. Upward movement in a straight line to achieve vertical lifting, so that it can rise to the process position E in FIG. 3A and close the reaction chamber 210; or, descend to the loading and unloading position in FIG. 3E below the reaction chamber 210 F, the take/drop operation can be performed at the loading and unloading position F.
  • a pressure ring 31 is further disposed in the reaction chamber 210.
  • the pressure ring 31 is used to fix the wafer to the lifting base 28 by gravity when the lifting base 28 is raised to the process position E.
  • the lift base 28 and the pressure ring 31 collectively close the bottom opening of the reaction chamber 210, thereby isolating the reaction chamber 210 from the space below it, thereby forming a relatively independent process environment.
  • the pressure ring 31 is supported by the lower ring body 24.
  • the lower end of the lower ring body 24 has a bent portion 242 for supporting the pressure ring 31, the curved portion
  • the lifting base 28 is at the process position E, its top end is lower than the portion supported by the bottom of the pressure ring 31; and when the lifting base 28 is moved out of the reaction chamber 210, the pressure ring 31 automatically falls to the top end of the curved portion 242.
  • a film opening 201 is provided on the sidewall of the process chamber for moving the wafer into or out of the process chamber.
  • the thimble device 29 is adapted to move the wafer into the process chamber by mating with a robot outside the process chamber and transfer it to the lift base 28 or from the lift base 28 out of the process chamber.
  • the ejector device 29 includes at least three ejector pins, and the vertical direction is lifted by linearly moving at least three thimbles in the vertical direction, thereby realizing loading and unloading of the wafer.
  • the lifting base 28 When the unprocessed wafer is loaded, after the lifting base 28 is lowered to the preset loading and unloading position F, at least three thimbles are vertically raised until the top end thereof is higher than the upper surface of the lifting base 28, and the process chamber is outdoor.
  • the robot transports the wafer into the process chamber via the transfer port 201 and is placed on at least three thimbles; the thimble carrying the wafer is vertically lowered until its top end is lower than the upper surface of the lift base 28, at which time the wafer is transferred Up to the upper surface of the lifting base 28; lifting the lifting base 28 to the process position E, thereby completing the loading of the wafer.
  • the wafer transfer device can also eliminate the thimble device, and only realize the wafer in both by the lifting base and the robot outside the process chamber. Passing between.
  • the structure of the lining ring assembly for forming the shimming cavity is not limited to the structure adopted in the embodiment. In practical applications, other specific structures may be designed for the lining ring assembly to realize the A flow chamber is formed between the inner side walls of the reaction chamber.
  • the process chamber provided in Embodiment 2 of the present invention may further include a plurality of reaction chambers, multiple sets of intake systems and wafer transfer devices independent of each other.
  • a plurality of reaction chambers are disposed inside the process chamber and uniformly distributed along the circumferential direction of the process chamber, and each reaction chamber constitutes an independent process environment, and utilizes multiple sets of intake systems (not shown).
  • the process gas is correspondingly delivered to a plurality of reaction chambers.
  • each reaction chamber constitutes an independent process environment, and the process gas is transported to the reaction chamber in a one-to-one correspondence by the intake system, and the wafer transfer device is used to transport the wafer into the reaction chamber, which utilizes at least a single process chamber
  • Two reaction chambers can realize two or more processes at the same time, so that it is not necessary to increase the number of process chambers, that is, it can be increased simultaneously by increasing the number of reaction chambers without changing the number of process chambers.
  • the number of processing steps eliminates the need to redesign the structure of the transfer chamber, which in turn reduces the manufacturing cost of the device.
  • at least two reaction chambers are evenly distributed along the circumferential direction of the process chamber, this makes the overall structure of the process chamber more compact and takes up less space than the prior art.
  • a liner ring assembly is disposed in each reaction chamber, and the structure and function of the liner assembly are identical to those of the liner assembly in the single reaction chamber of the first embodiment, respectively, for each reaction chamber. That is, a vortex chamber is also formed between the upper annular horizontal portion, the lower annular horizontal portion, and the annular vertical portion and the inner side wall of the reaction chamber, and the process gas from the intake system is uniformly delivered into the reaction chamber.
  • the intake system corresponding to the reaction chamber can directly transport the process gas into the reaction chamber through the flow chamber, thereby not only increasing the speed of the process gas entering the reaction chamber, but also There is a problem that the process gas output from the intake system cannot all reach the reaction chamber, so that the flow rate of the process gas participating in the process can be more accurately controlled, thereby facilitating the process result.
  • borrow The turbid flow chamber can play a role in the transition and buffer of the gas flow, thereby improving the uniformity of the distribution of the process gas in the reaction chamber, thereby improving the process uniformity. Since the structure and function of the backing ring assembly have been described in detail in the first embodiment, no further details are provided herein.
  • FIG. 4 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention.
  • the semiconductor processing apparatus includes: two process chambers (711, 712) for processing the wafer, and each of the process chambers adopts the process chamber used in the first embodiment or the second embodiment. room.
  • the air chamber 64 is connected to the pre-cleaning chamber 65, and is provided therein with a robot 631 for respectively transferring the wafers into the respective chambers; two loading stages 62 for respectively carrying the unprocessed wafers and the finished processing Wafer.
  • the number of process chambers is two, but the present invention is not limited thereto. In practical applications, the number of process chambers may be one or more according to specific needs. .
  • the semiconductor processing apparatus may include a physical vapor deposition apparatus.
  • the semiconductor processing apparatus provided by the embodiments of the present invention can improve the speed of the process gas entering the reaction chamber, control the flow rate of the process gas participating in the process, and the process by using the process chamber provided by the above various embodiments of the present invention.
  • the uniformity of gas distribution in the reaction chamber not only improves process efficiency, improves process results, but also improves process uniformity.

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Abstract

　本发明提供一种工艺腔室以及半导体加工设备。该工艺腔室包括反应舱、进气***和晶片传输装置，其中，反应舱设置在工艺腔室内，用以对晶片进行工艺；进气***用于向反应舱提供工艺气体；晶片传输装置用于将晶片传输至反应舱内，在反应舱内设置有衬环组件，衬环组件的结构被设置为在其与反应舱的内侧壁之间形成匀流腔，用以将来自进气***的工艺气体通过所述匀流腔均匀地输送至反应舱内。本发明提供的工艺腔室以及半导体加工设备，可以提高工艺气体进入反应舱的速度、控制参与工艺过程的工艺气体的流量的准确度，以及工艺气体在反应舱内的分布均匀性。

Description

工艺腔室以及半导体加工设备 技术领域
本发明涉及半导体设备制造领域，具体地，涉及一种工艺腔室以及半导体加工设备。
背景技术
物理气相沉积(Physical Vapor Deposition,PVD)的基本原理是：在真空条件下，使金属、金属合金或化合物蒸发，并沉积在基体表面上，以形成具有特殊功能的薄膜。物理气相沉积的主要方法有：真空蒸镀、等离子体溅射镀膜、电弧等离子体镀膜、离子镀膜以及分子束外延等。其中，等离子体溅射镀膜是目前最具代表性和应用最广泛的物理气相沉积技术。在利用等离子体溅射技术对半导体晶片进行沉积(镀膜)工艺时，所采用的工艺腔室通常为真空环境，并向工艺腔室内提供工艺气体且激发其形成等离子体，等离子体轰击靶材，溅射出的靶材材料沉积在晶片表面上，从而形成工艺所需的薄膜。
对于半导体晶片薄膜的制备来说，整个晶片表面薄膜的均匀性是工艺一个极其重要的指标，而与该指标密切相关的是半导体晶片上及其附近的电磁场、热场及气流场等的分布。因此，提高电磁场、热场及气流场的分布均匀性是提高工艺均匀性的重要手段之一。
图1为现有的一种工艺腔室的侧面剖视图。图2为图1中I区域的正面放大图。如图1和图2所示，工艺腔室包括腔体106、反应舱118、上电极腔体111、升降机构和顶针机构。其中，反应舱118位于腔体106的顶部，用以对晶片进行工艺；升降机构包括基座110、基座提升轴108和基座驱动源(图中未示出)，其中，基座110用于承载晶片112，其通过基座提升轴108与基座驱动源连接，基座驱动源用于驱动基座提升 轴108作在竖直方向上作直线运动而实现其在竖直方向上的升降，从而带动基座110上升至反应舱118的内部或下降至腔体106的内部。此外，在腔体106顶壁的上表面上且与反应舱118相对应的位置处设置有贯穿顶壁厚度的通孔，基座110通过该通孔进入反应舱118的内部。
而且，在反应舱118内还设置有衬环组件，该衬环组件包括下衬环116和上衬环117，上衬环117位于下衬环116的内侧，且二者覆盖反应舱118的整个侧壁表面，用以防止该侧壁上附着污染颗粒。而且，在反应舱118内还设置有压环115，用于在基座110上升至反应舱118内的工艺位置时，利用自身重力将晶片112固定在基座110上；并且，在下衬环116的下端设置有弯曲部，该弯曲部自下衬环116的下端向内弯曲，并延伸至压环115的底部，用以在基座110移出反应舱118时，支撑压环115。
在腔体106的侧壁上设置有传片口102，用以供晶片112移入或移出腔体106；顶针机构设置在腔体106内，其包括至少三个顶针105、顶针提升轴107和顶针驱动源(图中未示出)，至少三个顶针105通过顶针提升轴107与顶针驱动源连接；顶针驱动源用于驱动顶针提升轴107在竖直方向上作直线运动而实现其在竖直方向上的升降，从而带动至少三个顶针105上升或下降，以配合用于向腔体106内传输晶片112的机械手将晶片112传递至基座110上，或者自基座110移出腔体106。
上电极腔体111设置在反应舱118的顶部，且在上电极腔体111与反应舱118之间设置有陶瓷环114，用以使二者电绝缘。而且，在上电极腔体111底壁下表面上设置有靶材113，且在上电极腔体111内设置有磁控管104以及用于驱动磁控管104相对于靶材113表面旋转的磁控管驱动机构。此外，在腔体106的侧壁上且位于传片口102的下方设置有进气口103，用以向腔体106内输送工艺气体。工艺气体的流向如图1和图2中的箭头所示，工艺气体自腔体106的一侧向另一侧扩散，直 至充满整个腔体106，在此过程中，一部分工艺气体经由压环115与下衬环116的弯曲部之间的空隙流入反应舱118的内部，以在工艺过程中被激发形成等离子体。
上述工艺腔室在实际应用中不可避免地存在以下问题：
其一，由于工艺气体是自腔体106的一侧逐渐扩散至反应舱118的内部，这不仅导致工艺气体到达工艺空间的速度较慢，而且由于工艺气体在反应舱118内的靠近进气口一侧的区域内的分布密度势必大于远离进气口一侧的区域内的分布密度，导致工艺气体在反应舱118的内部分布不均匀，从而给工艺均匀性带来不良影响。
其二，由于进入腔体106内的工艺气体不能全部扩散至反应舱118的内部，并参与工艺过程，这使得很难控制参与工艺过程的工艺气体的流量，从而给工艺结果带来不良影响。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种工艺腔室以及半导体加工设备，其可以提高工艺气体进入反应舱的速度、控制参与工艺过程的工艺气体的流量的准确度，以及工艺气体在反应舱内的分布均匀性。
为实现本发明的目的而提供一种工艺腔室，其包括反应舱、进气***和晶片传输装置，其中，所述反应舱设置在所述工艺腔室内，用以对晶片进行工艺；所述进气***用于向所述反应舱提供工艺气体；所述晶片传输装置用于将晶片传输至所述反应舱内；并且，在所述反应舱内设置有衬环组件，所述衬环组件的结构被设置为在其与所述反应舱的内侧壁之间形成匀流腔，以通过所述匀流腔将来自所述进气***的工艺气体均匀地输送至所述反应舱内。
其中，所述衬环组件包括上环体和下环体，所述上环***于所述下 环体的内侧，且二者之间具有环形间隙，所述环形间隙与所述反应舱的内部连通；在所述上环体的外周壁上设置有上环形水平部，在所述下环体的外周壁上设置有下环形水平部，且在二者之间设置有环形竖直部，所述上环形水平部、下环形水平部、环形竖直部与所述反应舱的内侧壁形成所述匀流腔；并且，在所述环形竖直部上均匀分布有多个径向通孔，所述径向通孔分别与所述匀流腔和所述环形间隙连通。
其中，所述反应舱的数量为一个。
其中，所述反应舱的数量为至少两个，且沿所述工艺腔室的周向均匀分布，每个反应舱内构成独立的工艺环境；所述进气***的数量与所述反应舱的数量相对应，且一一对应地向所述反应舱输送工艺气体。
其中，在所述反应舱的侧壁内形成有进气通道，所述进气通道的进气端与所述进气***连接，所述进气通道的出气端设置在所述反应舱的内侧壁上，且与所述匀流腔连通。
其中，所述进气通道的进气端位于所述反应舱的顶部。
其中，所述径向通孔的直径的取值范围在0.5～2mm。
其中，所述上环体、上环形水平部和环形竖直部采用一体成型的方式制作；所述下环体和所述下环形水平部采用一体成型的方式制作；或者所述上环体和上环形水平部采用一体成型的方式制作；所述下环体、所述下环形水平部和环形竖直部采用一体成型的方式制作。
作为另一个技术方案，本发明还提供一种半导体加工设备，其包括：工艺腔室，用于对晶片进行加工；去气腔室，用于去除晶片上的水汽；预清洗腔室，用于去除晶片表面上的残余物；传输腔室，其分别与所述工艺腔室、所述去气腔室和所述预清洗腔室连接，且在其内部设置有机械手，用以将晶片分别传输至各个腔室内；并且，所述工艺腔室可以采用本发明上述任意方案提供的工艺腔室。
其中，所述工艺腔室为多个。
本发明具有以下有益效果：
本发明提供的工艺腔室，其在反应舱内设置衬环组件，该衬环组件利用其特定结构与反应舱的内侧壁之间形成匀流腔，用以将来自进气***的工艺气体均匀地输送至反应舱内，这使得工艺气体能够通过该匀流腔直接进入反应舱，从而不仅可以提高工艺气体进入反应舱的速度，而且不存在自进气***输出的工艺气体不能全部到达反应舱内的问题，从而可以更准确地控制参与工艺过程的工艺气体的流量，进而有利于工艺结果。同时，本发明提供的工艺腔室无需在反应舱额外设置匀流装置，从而不仅无需对现有腔室结构进行改造，而且还可以简化腔室结构，进而可以降低工艺腔室的制造成本。此外，借助匀流腔，可以将来自进气***的工艺气体均匀地输送至反应舱内，从而可以提高工艺气体在反应舱内的分布均匀性，进而可以提高工艺均匀性。
本发明提供的半导体加工设备，其通过采用本发明提供的工艺腔室，可以提高工艺气体进入反应舱的速度、控制参与工艺过程的工艺气体的流量的准确度，以及工艺气体在反应舱内的分布均匀性，从而不仅可以提高工艺效率、改善工艺结果，而且还可以提高工艺均匀性。
附图说明
图1为现有的一种工艺腔室的侧面剖视图；
图2为图1中I区域的正面放大图；
图3A为本发明实施例一提供的工艺腔室的剖视图；
图3B为图3A中I区域的放大图；
图3C为图3A中沿A-A线的剖视图；
图3D为图3A中工艺腔室的上衬环的立体图；
图3E为本发明实施例一提供的工艺腔室在装卸晶片时的剖视图；以及
图4为本发明实施例提供的半导体加工设备的结构示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的工艺腔室以及半导体加工设备进行详细描述。
图3A为本发明实施例一提供的工艺腔室的剖视图。请参阅图3A，本发明实施例一提供的工艺腔室包括反应舱210、进气***和晶片传输装置。其中，反应舱210的数量为一个，其设置在工艺腔室内，用于对晶片进行工艺。具体地，工艺腔室由腔体20围绕而成，且在该腔体20的顶部设置有环形舱体21，该环形舱体21构成反应舱210。进气***(图中未示出)用于向反应舱210提供工艺气体。
下面对本实施例中反应舱210的进气方式进行详细描述。具体地，图3B为图3A中I区域的放大图。图3C为图3A中沿A-A线的剖视图。请一并参阅图3B和图3C，在反应舱210内设置有衬环组件，该衬环组件的结构被设置为在其与反应舱210的内侧壁之间形成匀流腔，用以将来自进气***的工艺气体均匀地输送至反应舱210内。
在本实施例中，该衬环组件的结构具体为：衬环组件包括上环体25和下环体24，上环体25位于下环体24的内侧，且在径向方向上二者之间具有环形间隙261，环形间隙261与反应舱210的内部连通。而且，在上环体25的外周壁上设置有上环形水平部251，在下环体24的外周壁上设置有下环形水平部241，且在二者之间设置有环形竖直部27，上环形水平部251、下环形水平部241、环形竖直部27与反应舱210的内侧壁形成匀流腔26；并且，在环形竖直部27上均匀分布有多个径向通孔271，径向通孔271分别与匀流腔26和环形间隙261连通。
在本实施例中，在反应舱210的侧壁内形成有进气通道22，进气通道22的进气端222通过接头23与进气***连接，进气通道22的出 气端221设置在反应舱210的内侧壁上，且与匀流腔26连通。当反应舱210工作时，来自进气***的工艺气体通过进气通道22流入匀流腔26，并向四周扩散直至充满匀流腔26，然后自各个径向通孔271均匀地流入环形间隙261内，最终沿该环形间隙261流入反应舱210内。优选的，进气通道的进气端222位于反应舱210的顶部，这不仅可以节省工艺腔室的***占用空间，而且便于与进气***的连接。
由上可知，本实施例所采用的衬环组件利用其上环形水平部251、下环形水平部241和环形竖直部27与反应舱210的内侧壁之间形成匀流腔26，并将来自进气***的工艺气体均匀地输送至反应舱210内。这可以使工艺气体能够通过该匀流腔26直接进入反应舱，从而不仅可以提高工艺气体进入反应舱210的速度，而且不存在自进气***输出的工艺气体不能全部到达反应舱内的问题，从而可以更准确地控制参与工艺过程的工艺气体的流量，进而有利于工艺结果。而且，由于本实施例所采用的衬环组件利用自身结构与反应舱210的内侧壁之间形成匀流腔26，这使得本实施例提供的工艺腔室无需在反应舱额外设置匀流装置，从而不仅无需对现有腔室结构进行改造，而且还可以简化腔室结构，进而可以降低工艺腔室的制造成本。此外，借助匀流腔26，可以对气流起到过渡、缓冲的作用，然后利用各个径向通孔271将工艺气体均匀地输送至反应舱内，从而可以提高工艺气体在反应舱内的分布均匀性，进而可以提高工艺均匀性。
如图3A所示，由下环体24和上环体25组成的环壁应能够覆盖整个反应舱210的侧壁表面，以起到保护反应舱210的侧壁的作用，从而可以防止其上附着污染物。具体地，上环体25的上端应不低于环形舱体21的内周壁的顶端，且上环体25的下端低于下环体24的上端，从而实现覆盖整个反应舱210的侧壁表面。此外，为了使自径向通孔271流出的工艺气体能够流入环形间隙261内，上环体25的上端高于通孔 271，且下环体24的上端低于径向通孔271。另外，下环体24和上环体25与反应舱210优选采用可拆卸的方式连接，以方便清洗。
在本实施例中，下环体24与下环形水平部241采用一体成型的方式制作，即，二者呈一体式结构；上环体25、上环形水平部251和环形竖直部27采用一体成型的方式制作，即，三者呈一体式结构，如图3D所示。由此，在安装衬环组件时，只需将环形竖直部27固定在下环形水平部241上，即可实现上环体25和下环体24的组装，从而通过采用一体成型的方式制作上环体25和下环体24的用于形成匀流腔26的特定结构，便于环形组件的加工和组装。
需要说明的是，在实际应用中，也可以使上环体25和上环形水平部251采用一体成型的方式制作；下环体24、下环形水平部241和环形竖直部27采用一体成型的方式制作。
优选的，在设计径向通孔271的直径时，最好使得工艺气体能够在充满匀流腔26之后再自各个径向通孔271流出，以使工艺气体能够均匀地从四周流入反应舱210内，为此，可以将径向通孔271的直径设计在0.5～2mm的范围内。
在本实施例中，在反应舱210的内侧壁下部形成有凸缘，下环体24通过下环形水平部241搭接在该凸缘上；环形竖直部27的上端与上环形水平部251连接，环形竖直部27的下端由下环形水平部241支撑，且通过螺钉将上环形水平部251、环形竖直部27、下环形水平部241与反应舱210内侧壁上的凸缘固定连接，从而将衬环组件固定在反应舱210内。当然，在实际应用中，还可以采用其他任意方式固定衬环组件，本发明对此没有特别限制。
晶片传输装置用于将晶片传输至反应舱210内。在本实施例中，晶片传输装置包括升降基座28和顶针装置29。其中，升降基座28设置在工艺腔室内，且位于反应舱210的下方，升降基座28通过在竖直方 向上作直线运动而实现竖直方向上的升降，从而可以上升至如图3A中的工艺位置E，并封闭该反应舱210；或者，下降至位于反应舱210下方的如图3E中的装卸位置F，可以在该装卸位置F处进行取/放片操作。
在本实施例中，在反应舱210内还设置有压环31，压环31用于在升降基座28上升至工艺位置E时，利用自身重力将晶片固定在升降基座28上，此时升降基座28和压环31共同将反应舱210的底部开口封闭，从而使反应舱210与其下方的空间相互隔离，从而形成相对独立的工艺环境。此外，当升降基座28下降，并移出反应舱210时，压环31由下环体24支撑，具体地，下环体24的下端具有用于支撑压环31的弯曲部242，该弯曲部242在升降基座28位于工艺位置E时，其顶端低于压环31底部被支撑的部分；而当升降基座28移出反应舱210时，压环31自动下落至该弯曲部242的顶端。
在本实施例中，在工艺腔室的侧壁上设置有传片口201，用以供晶片移入或移出工艺腔室。顶针装置29用于通过与工艺腔室外的机械手相配合，而实现将晶片移入工艺腔室，并传递至升降基座28上，或者自升降基座28移出工艺腔室。具体地，顶针装置29包括至少三个顶针，通过使至少三个顶针作在竖直方向上作直线运动而实现竖直方向上的升降，以此实现晶片的装卸。当装载未加工的晶片时，使升降基座28下降至预设的装卸位置F之后，使至少三个顶针竖直上升，直至其顶端高于升降基座28的上表面，此时工艺腔室外的机械手经由传片口201将晶片输送至工艺腔室内，且放置于至少三个顶针上；载有晶片的顶针竖直下降，直至其顶端低于升降基座28的上表面，此时晶片被传递至升降基座28的上表面上；使升降基座28上升至工艺位置E，从而完成晶片的装载。
需要说明的是，在实际应用中，晶片传输装置也可以省去顶针装置，而仅通过升降基座与工艺腔室外的机械手相配合，而实现晶片在二者之 间的传递。
还需要说明的是，衬环组件用于形成匀流腔的结构并不局限于本实施例中所采用的结构，在实际应用中，还可以对衬环组件设计其他特定结构，来实现其与反应舱的内侧壁之间形成匀流腔。
作为一种较优的实施例，本发明实施例二提供的工艺腔室还可以包括多个反应舱、相互独立的多套进气***和晶片传输装置。多个反应舱设置在工艺腔室的内部，且沿工艺腔室的周向均匀分布，并且每个反应舱构成独立的工艺环境，并利用多套进气***(图中未示出)一一对应地向多个反应舱内输送工艺气体。由于每个反应舱构成独立的工艺环境，并利用进气***一一对应地向反应舱输送工艺气体，以及利用晶片传输装置将晶片传输至反应舱内，这使得利用单个工艺腔室中的至少两个反应舱即可实现同时进行两道以上的工序，从而无需增加工艺腔室的数量，即，可以在不改变工艺腔室的数量的前提下，仅通过增加反应舱的数量来增加同时进行加工的工序数量，也就无需重新设计传输腔室的结构，进而可以降低设备的制造成本。此外，由于至少两个反应舱沿该工艺腔室的周向均匀分布，这与现有技术相比，可以使工艺腔室的整体结构更紧凑、且占地空间更小。
而且，在每个反应舱内设置有衬环组件，且对于每个反应舱，该衬环组件的结构和功能与上述实施例一中单个反应舱中衬环组件的结构和功能方式完全相同，即，同样利用其上环形水平部、下环形水平部和环形竖直部与反应舱的内侧壁之间形成匀流腔，并将来自进气***的工艺气体均匀地输送至反应舱内。因此，对于每个反应舱来说，与该反应舱相对应的进气***能够将工艺气体通过该匀流腔直接输送至反应舱内，从而不仅可以提高工艺气体进入反应舱的速度，而且不存在自进气***输出的工艺气体不能全部到达反应舱内的问题，从而可以更准确地控制参与工艺过程的工艺气体的流量，进而有利于工艺结果。此外，借 助匀流腔，可以对气流起到过渡、缓冲的作用，从而可以提高工艺气体在反应舱内的分布均匀性，进而可以提高工艺均匀性。由于衬环组件的结构和功能在上述实施例一中已有了详细描述，在此不再赘述。
作为另一个技术方案，本发明还提供一种半导体加工设备，图4为本发明实施例提供的半导体加工设备的结构示意图。请参阅图4，半导体加工设备包括：两个工艺腔室(711，712)，用于对晶片进行加工，并且每个工艺腔室采用了上述实施例一或实施例二中所采用的工艺腔室。去气腔室64，用于去除晶片上的水汽；预清洗腔室65，用于去除晶片表面上的残余物；传输腔室63，其分别与两个工艺腔室(711，712)、去气腔室64和预清洗腔室65连接，且在其内部设置有机械手631，用以将晶片分别传输至各个腔室内；两个装载台62，用于分别承载未加工的晶片和已完成加工的晶片。
需要说明的是，在本实施例中，工艺腔室的数量为两个，但是本发明并不局限于此，在实际应用中，工艺腔室的数量根据具体需要还可以为一个或者三个以上。
在实际应用中，半导体加工设备可以包括物理气相沉积设备。
本发明实施例提供的半导体加工设备，其通过采用本发明上述各个实施例提供的工艺腔室，可以提高工艺气体进入反应舱的速度、控制参与工艺过程的工艺气体的流量的准确度，以及工艺气体在反应舱内的分布均匀性，从而不仅可以提高工艺效率、改善工艺结果，而且还可以提高工艺均匀性。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

  1. 一种工艺腔室，包括反应舱、进气***和晶片传输装置，其中，所述反应舱设置在所述工艺腔室内，用以对晶片进行工艺；所述进气***用于向所述反应舱提供工艺气体；所述晶片传输装置用于将晶片传输至所述反应舱内，其特征在于，在所述反应舱内设置有衬环组件，所述衬环组件的结构被设置为在其与所述反应舱的内侧壁之间形成匀流腔，以通过所述匀流腔将来自所述进气***的工艺气体均匀地输送至所述反应舱内。
  2. 根据权利要求1所述的工艺腔室，其特征在于，所述衬环组件包括上环体和下环体，所述上环***于所述下环体的内侧，且二者之间具有环形间隙，所述环形间隙与所述反应舱的内部连通；
    在所述上环体的外周壁上设置有上环形水平部，在所述下环体的外周壁上设置有下环形水平部，且在二者之间设置有环形竖直部，所述上环形水平部、下环形水平部、环形竖直部与所述反应舱的内侧壁形成所述匀流腔；并且，在所述环形竖直部上均匀分布有多个径向通孔，所述径向通孔分别与所述匀流腔和所述环形间隙连通。
  3. 根据权利要求1或2所述的工艺腔室，其特征在于，所述反应舱的数量为一个。
  4. 根据权利要求1或2所述的工艺腔室，其特征在于，所述反应舱的数量为至少两个，且沿所述工艺腔室的周向均匀分布，每个反应舱内构成独立的工艺环境；
    所述进气***的数量与所述反应舱的数量相对应，且一一对应地向所述反应舱输送工艺气体。
  5. 根据权利要求1或2所述的工艺腔室，其特征在于，在所述反应舱的侧壁内形成有进气通道，所述进气通道的进气端与所述进气***连接，所述进气通道的出气端设置在所述反应舱的内侧壁上，且与所述匀流腔连通。
  6. 根据权利要求5所述的工艺腔室，其特征在于，所述进气通道的进气端位于所述反应舱的顶部。
  7. 根据权利要求2所述的工艺腔室，其特征在于，所述径向通孔的直径的取值范围在0.5～2mm。
  8. 根据权利要求2所述的工艺腔室，其特征在于，所述上环体、上环形水平部和环形竖直部采用一体成型的方式制作；所述下环体和所述下环形水平部采用一体成型的方式制作；或者
    所述上环体和上环形水平部采用一体成型的方式制作；所述下环体、所述下环形水平部和环形竖直部采用一体成型的方式制作。
  9. 一种半导体加工设备，包括：工艺腔室，用于对晶片进行加工；去气腔室，用于去除晶片上的水汽；预清洗腔室，用于去除晶片表面上的残余物；传输腔室，其分别与所述工艺腔室、所述去气腔室和所述预清洗腔室连接，且在其内部设置有机械手，用以将晶片分别传输至各个腔室内；其特征在于，所述工艺腔室采用权利要求1-8任意一项所述的工艺腔室。
  10. 根据权利要求9所述的半导体加工设备，其特征在于，所述工艺腔室为多个。
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