SG11201605335PA - Process chamber and semiconductor processing apparatus - Google Patents

Process chamber and semiconductor processing apparatus

Info

Publication number
SG11201605335PA
SG11201605335PA SG11201605335PA SG11201605335PA SG11201605335PA SG 11201605335P A SG11201605335P A SG 11201605335PA SG 11201605335P A SG11201605335P A SG 11201605335PA SG 11201605335P A SG11201605335P A SG 11201605335PA SG 11201605335P A SG11201605335P A SG 11201605335PA
Authority
SG
Singapore
Prior art keywords
processing apparatus
process chamber
semiconductor processing
semiconductor
chamber
Prior art date
Application number
SG11201605335PA
Inventor
Feng Lv
Fenggang Zhang
Mengxin Zhao
Peijun Ding
Original Assignee
Beijing Nmc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co Ltd filed Critical Beijing Nmc Co Ltd
Publication of SG11201605335PA publication Critical patent/SG11201605335PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
SG11201605335PA 2013-12-29 2014-12-29 Process chamber and semiconductor processing apparatus SG11201605335PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201310737531 2013-12-29
CN201410431336.3A CN104752274B (en) 2013-12-29 2014-08-28 Processing chamber and semiconductor processing equipment
PCT/CN2014/095338 WO2015096819A1 (en) 2013-12-29 2014-12-29 Process chamber and semiconductor processing apparatus

Publications (1)

Publication Number Publication Date
SG11201605335PA true SG11201605335PA (en) 2016-08-30

Family

ID=53477598

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201605335PA SG11201605335PA (en) 2013-12-29 2014-12-29 Process chamber and semiconductor processing apparatus

Country Status (6)

Country Link
US (1) US10347470B2 (en)
KR (1) KR101841201B1 (en)
CN (1) CN104752274B (en)
SG (1) SG11201605335PA (en)
TW (1) TW201525168A (en)
WO (1) WO2015096819A1 (en)

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CN106876299B (en) * 2015-12-11 2019-08-23 北京北方华创微电子装备有限公司 Semiconductor processing equipment
CN106876316A (en) * 2015-12-14 2017-06-20 北京北方微电子基地设备工艺研究中心有限责任公司 Pressure ring and semiconductor processing equipment
CN107093544B (en) * 2016-02-18 2019-01-18 北京北方华创微电子装备有限公司 Pre-cleaning cavity and semiconductor processing equipment
CN107305857B (en) * 2016-04-20 2020-08-21 北京北方华创微电子装备有限公司 Wafer supporting assembly, reaction chamber and semiconductor processing equipment
CN107785283B (en) * 2016-08-24 2020-07-17 北京北方华创微电子装备有限公司 Heating chamber and semiconductor processing equipment
CN108085649B (en) * 2016-11-23 2020-03-27 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor processing equipment
CN109659213B (en) * 2017-10-10 2021-01-29 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor processing equipment
CN109898050B (en) * 2017-12-07 2021-07-13 北京北方华创微电子装备有限公司 Uniform flow member and process chamber
WO2020046567A1 (en) 2018-08-29 2020-03-05 Applied Materials, Inc. Chamber injector
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
CN110066981B (en) * 2019-06-17 2023-11-28 浙江晶驰光电科技有限公司 Forward-loading substrate positioning device and substrate loading method
CN112713073B (en) * 2019-10-24 2024-03-12 中微半导体设备(上海)股份有限公司 Corrosion-resistant gas conveying component and plasma processing device thereof
CN110854005A (en) * 2019-11-22 2020-02-28 广西民族大学 Method for manufacturing electrode with micron structure
CN111668179B (en) * 2020-06-19 2022-03-29 福建省晋华集成电路有限公司 Semiconductor structure
CN111947450A (en) * 2020-08-24 2020-11-17 北京北方华创微电子装备有限公司 Semiconductor chamber and annealing device
CN112359343B (en) * 2020-09-29 2022-11-25 北京北方华创微电子装备有限公司 Gas inlet device of semiconductor process equipment and semiconductor process equipment
CN113445123B (en) * 2021-06-02 2022-09-16 北京北方华创微电子装备有限公司 Air inlet and exhaust structure of semiconductor chamber and semiconductor chamber
CN113972154A (en) * 2021-10-20 2022-01-25 北京北方华创微电子装备有限公司 Process chamber, semiconductor processing equipment and semiconductor processing method
CN114420526B (en) * 2022-01-18 2023-09-12 江苏天芯微半导体设备有限公司 Bush and wafer preprocessing device
CN114204409A (en) * 2022-02-18 2022-03-18 武汉锐晶激光芯片技术有限公司 Chip cavity surface processing device
CN115083964A (en) * 2022-06-30 2022-09-20 北京北方华创微电子装备有限公司 Process chamber, semiconductor process equipment and process method
CN117457468B (en) * 2023-12-22 2024-03-26 北京北方华创微电子装备有限公司 Process chamber and air inlet assembly thereof

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Also Published As

Publication number Publication date
CN104752274A (en) 2015-07-01
CN104752274B (en) 2017-12-19
TWI513838B (en) 2015-12-21
TW201525168A (en) 2015-07-01
WO2015096819A1 (en) 2015-07-02
KR101841201B1 (en) 2018-03-22
US10347470B2 (en) 2019-07-09
US20160322206A1 (en) 2016-11-03
KR20160103126A (en) 2016-08-31

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