SG11201605335PA - Process chamber and semiconductor processing apparatus - Google Patents

Process chamber and semiconductor processing apparatus

Info

Publication number
SG11201605335PA
SG11201605335PA SG11201605335PA SG11201605335PA SG11201605335PA SG 11201605335P A SG11201605335P A SG 11201605335PA SG 11201605335P A SG11201605335P A SG 11201605335PA SG 11201605335P A SG11201605335P A SG 11201605335PA SG 11201605335P A SG11201605335P A SG 11201605335PA
Authority
SG
Singapore
Prior art keywords
processing apparatus
process chamber
semiconductor processing
semiconductor
chamber
Prior art date
Application number
SG11201605335PA
Other languages
English (en)
Inventor
Feng Lv
Fenggang Zhang
Mengxin Zhao
Peijun Ding
Original Assignee
Beijing Nmc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co Ltd filed Critical Beijing Nmc Co Ltd
Publication of SG11201605335PA publication Critical patent/SG11201605335PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
SG11201605335PA 2013-12-29 2014-12-29 Process chamber and semiconductor processing apparatus SG11201605335PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201310737531 2013-12-29
CN201410431336.3A CN104752274B (zh) 2013-12-29 2014-08-28 工艺腔室以及半导体加工设备
PCT/CN2014/095338 WO2015096819A1 (zh) 2013-12-29 2014-12-29 工艺腔室以及半导体加工设备

Publications (1)

Publication Number Publication Date
SG11201605335PA true SG11201605335PA (en) 2016-08-30

Family

ID=53477598

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201605335PA SG11201605335PA (en) 2013-12-29 2014-12-29 Process chamber and semiconductor processing apparatus

Country Status (6)

Country Link
US (1) US10347470B2 (zh)
KR (1) KR101841201B1 (zh)
CN (1) CN104752274B (zh)
SG (1) SG11201605335PA (zh)
TW (1) TW201525168A (zh)
WO (1) WO2015096819A1 (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106876299B (zh) 2015-12-11 2019-08-23 北京北方华创微电子装备有限公司 半导体加工设备
CN106876316A (zh) * 2015-12-14 2017-06-20 北京北方微电子基地设备工艺研究中心有限责任公司 压环及半导体加工设备
CN107093544B (zh) * 2016-02-18 2019-01-18 北京北方华创微电子装备有限公司 预清洗腔室及半导体加工设备
CN107305857B (zh) * 2016-04-20 2020-08-21 北京北方华创微电子装备有限公司 晶片支撑组件、反应腔室及半导体加工设备
CN107785283B (zh) * 2016-08-24 2020-07-17 北京北方华创微电子装备有限公司 加热腔室及半导体加工设备
CN108085649B (zh) * 2016-11-23 2020-03-27 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN109659213B (zh) * 2017-10-10 2021-01-29 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN109898050B (zh) * 2017-12-07 2021-07-13 北京北方华创微电子装备有限公司 匀流件和工艺腔室
CN214848503U (zh) 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
CN110066981B (zh) * 2019-06-17 2023-11-28 浙江晶驰光电科技有限公司 正装基片定位装置及基片装载方法
CN112713073B (zh) 2019-10-24 2024-03-12 中微半导体设备(上海)股份有限公司 一种耐腐蚀气体输送部件及其等离子体处理装置
CN110854005A (zh) * 2019-11-22 2020-02-28 广西民族大学 一种具有微米结构的电极的制作方法
CN111668179B (zh) * 2020-06-19 2022-03-29 福建省晋华集成电路有限公司 半导体结构
CN111947450A (zh) * 2020-08-24 2020-11-17 北京北方华创微电子装备有限公司 半导体腔室及退火装置
CN112359343B (zh) * 2020-09-29 2022-11-25 北京北方华创微电子装备有限公司 半导体工艺设备的进气装置及半导体工艺设备
CN113445123B (zh) * 2021-06-02 2022-09-16 北京北方华创微电子装备有限公司 半导体腔室的进排气结构和半导体腔室
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool
CN113972154A (zh) * 2021-10-20 2022-01-25 北京北方华创微电子装备有限公司 工艺腔室、半导体工艺设备和半导体工艺方法
CN114420526B (zh) * 2022-01-18 2023-09-12 江苏天芯微半导体设备有限公司 一种衬套及晶圆预处理装置
CN114204409A (zh) * 2022-02-18 2022-03-18 武汉锐晶激光芯片技术有限公司 芯片腔面处理装置
CN115083964A (zh) * 2022-06-30 2022-09-20 北京北方华创微电子装备有限公司 工艺腔室、半导体工艺设备及工艺方法
CN117457468B (zh) * 2023-12-22 2024-03-26 北京北方华创微电子装备有限公司 工艺腔室及其进气组件

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108569A (en) * 1989-11-30 1992-04-28 Applied Materials, Inc. Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering
AU3145197A (en) * 1996-06-28 1998-01-21 Lam Research Corporation Apparatus and method for high density plasma chemical vapor deposition
US5827408A (en) * 1996-07-26 1998-10-27 Applied Materials, Inc Method and apparatus for improving the conformality of sputter deposited films
US6383330B1 (en) * 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US6802935B2 (en) * 2002-03-21 2004-10-12 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor chamber process apparatus and method
KR100500246B1 (ko) 2003-04-09 2005-07-11 삼성전자주식회사 가스공급장치
US6916009B2 (en) * 2003-07-14 2005-07-12 Vat Holding Ag Load-lock device for introducing substrates into a vacuum chamber
US7722737B2 (en) * 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
CN100369192C (zh) * 2005-12-26 2008-02-13 北京北方微电子基地设备工艺研究中心有限责任公司 半导体加工***反应腔室
US7906032B2 (en) * 2006-03-31 2011-03-15 Tokyo Electron Limited Method for conditioning a process chamber
KR100753158B1 (ko) * 2006-06-19 2007-08-30 삼성전자주식회사 공정 챔버의 세정 방법
CN107359103A (zh) * 2009-10-28 2017-11-17 应用材料公司 用于等离子体增强化学气相沉积的腔室
US8580092B2 (en) * 2010-01-29 2013-11-12 Applied Materials, Inc. Adjustable process spacing, centering, and improved gas conductance
JP5743266B2 (ja) * 2010-08-06 2015-07-01 キヤノンアネルバ株式会社 成膜装置及びキャリブレーション方法
CN102409303A (zh) * 2010-09-25 2012-04-11 北京北方微电子基地设备工艺研究中心有限责任公司 一种靶材功率加载方法、靶材电源及半导体处理设备
JP5905476B2 (ja) * 2010-10-19 2016-04-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｎａｎｏｃｕｒｅｕｖチャンバ用の石英シャワーヘッド
US9870919B2 (en) * 2012-04-25 2018-01-16 Applied Materials, Inc. Process chamber having separate process gas and purge gas regions

Also Published As

Publication number Publication date
US20160322206A1 (en) 2016-11-03
CN104752274B (zh) 2017-12-19
WO2015096819A1 (zh) 2015-07-02
US10347470B2 (en) 2019-07-09
KR101841201B1 (ko) 2018-03-22
CN104752274A (zh) 2015-07-01
TW201525168A (zh) 2015-07-01
KR20160103126A (ko) 2016-08-31
TWI513838B (zh) 2015-12-21

Similar Documents

Publication Publication Date Title
SG11201605335PA (en) Process chamber and semiconductor processing apparatus
SG11201704323XA (en) Wafer processing device and method therefor
TWI563560B (en) Substrate processing apparatus and substrate processing method
GB2516056B (en) Audio processing apparatus
SG11201602919PA (en) Carrier-bonding methods and articles for semiconductor and interposer processing
SG11201600633WA (en) Pre-cleaning chamber and semiconductor processing device
EP2949804A4 (en) CLOTHING TREATMENT APPARATUS
EP2966673A4 (en) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
EP2998844A4 (en) METHOD AND APPARATUS FOR PROCESSING APPLICATION ASSOCIATION
SG10201508119XA (en) Substrate processing apparatus and processing method
SG11201600129XA (en) Plasma processing apparatus and plasma processing method
TWI562221B (en) Substrate processing method and substrate processing apparatus
TWI563558B (en) Substrate treatment apparatus and substrate treatment method
EP2980833A4 (en) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
SG10201708625XA (en) Toroidal plasma processing apparatus
SG11201604486XA (en) Semiconductor wafer processing methods and apparatus
SG11201609143TA (en) Plasma processing method and plasma processing apparatus
TWI561123B (en) Plasma chamber and apparatus for treating substrate
EP3059874A4 (en) METHOD AND DEVICE FOR PROCESSING FREQUENCY HOPPING
ZA201603206B (en) Fluid treatment apparatus and process
SG11201704891XA (en) Heating chamber and semiconductor processing apparatus
PT2977485T (pt) Aparelho de processamento de pvd e método de processamento de pvd
HK1206506A1 (zh) 操作處理方法和裝置
SG11201702404XA (en) Plasma processing method and plasma processing apparatus
SG10201407598VA (en) Substrate cleaning apparatus and substrate processing apparatus