WO2014094356A1 - Solution décapante de photorésine - Google Patents

Solution décapante de photorésine Download PDF

Info

Publication number
WO2014094356A1
WO2014094356A1 PCT/CN2013/001501 CN2013001501W WO2014094356A1 WO 2014094356 A1 WO2014094356 A1 WO 2014094356A1 CN 2013001501 W CN2013001501 W CN 2013001501W WO 2014094356 A1 WO2014094356 A1 WO 2014094356A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist
sugar
hydroxide
cleaning agent
agent according
Prior art date
Application number
PCT/CN2013/001501
Other languages
English (en)
Chinese (zh)
Inventor
刘兵
彭洪修
孙广胜
颜金荔
Original Assignee
安集微电子科技(上海)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子科技(上海)有限公司 filed Critical 安集微电子科技(上海)有限公司
Publication of WO2014094356A1 publication Critical patent/WO2014094356A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/22—Carbohydrates or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the invention relates to a Guanghai IJ glue remover. Background technique
  • a photoresist is required to form a mask, which needs to be removed after the microsphere is successfully implanted, but since the photoresist is thick, it is completely removed. More difficult.
  • a more common method for improving the removal is to extend the soaking time, increase the soaking temperature, and use a more aggressive solution, but this often results in corrosion of the wafer substrate and corrosion of the microspheres, resulting in a significant reduction in wafer yield.
  • the photoresist cleaning liquid is mainly composed of a polar organic solvent, a strong alkali, and/or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning liquid or rinsing the semiconductor wafer with the cleaning liquid.
  • W02006/056298A1 utilizes an alkaline cleaning solution consisting of tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMS0), ethylene glycol (EG) and water to clean the photoresist of the copper substrate, while Basically non-corrosive to metallic copper, but it is corrosive to metallic aluminum; for example, US5529887 consists of potassium hydroxide (K0H), mercapto diol monodecyl ether, water-soluble fluoride and water, etc. Immersed in the cleaning solution to remove thick film photoresist on metal and dielectric substrates at 4 ° C. The corrosion of the semiconductor wafer substrate is high.
  • TMAH tetramethylammonium hydroxide
  • DMS0 dimethyl sulfoxide
  • EG ethylene glycol
  • water water
  • the technical problem to be solved by the invention is to provide a thick film photoresist for the defects of the existing thick film photoresist cleaning liquid which has insufficient cleaning ability or strong corrosion to the semiconductor wafer pattern and the substrate.
  • a photoresist cleaner that is highly cleanable and less corrosive to semiconductor wafer patterns and substrates.
  • the low etchability of the present invention is applicable to cleaning solutions for thicker photoresist cleaning and cleaning methods thereof.
  • the low etch photoresist cleaning solution contains (a) a quaternary ammonium hydroxide, (b) an alcohol amine, (c) a sugar and/or a sugar alcohol (d) surfactant, and (e) a solvent.
  • the low-etching photoresist cleaning agent can efficiently remove the photoresist on the semiconductor wafer, and has no attack on the substrate, such as metal aluminum, copper, etc., and has good application prospects in the field of semiconductor wafer cleaning and the like. .
  • the concentration of the quaternary ammonium hydroxide is 0.1 to 10% by weight, preferably 1 to 5% by weight; the concentration of the alcoholamine is 0.1 to 30% by weight, preferably 0.1 to 15% by weight; the concentration of the sugar and/or sugar alcohol It is 0.1 to 5 wt%, preferably 0.1 to 3 wt%; the concentration of the surfactant is 0.01 to 3 wt%, preferably 0.1 to 1 wt%; the balance is a solvent.
  • the mass of component a and component b described in the present invention is preferably between 6:1 and 1:2.5.
  • the ratio of component a to component b is greater than 6:1, the system may not form a homogeneous solution or form a homogeneous solution for a long time; on the other hand, when the ratio of component a to component b is less than 1 At 2.5 o'clock, too much alcohol amine will cause the removal efficiency of the photoresist to decrease.
  • the quaternary ammonium hydroxides described in the present invention include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, methyltriethylammonium hydroxide, hydroxyethyl One or more of trimethylammonium hydroxide, hexadecanyltrimethylammonium hydroxide, and benzyltrimethylammonium hydroxide.
  • the alcohol amine described in the present invention is one of monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, 2-(diethylamino)ethanol, ethyldiethanolamine and diglycolamine. Or several.
  • the presence of an alcohol amine facilitates the improvement of the solubility of the quaternary ammonium hydroxide.
  • the sugar or sugar alcohol described in the present invention is selected from the group consisting of threose, arabinose, xylose, ribose, nucleoside Sugar, xylulose, glucose, II-drum, T-lactose, sugar, allose, A'; sugar, idose, loprose, sorbose, psicose, fructose, sul
  • the active agent is selected from the group consisting of polyvinylpyrrolidone.
  • the addition of a surfactant facilitates the removal of the photoresist.
  • the solvent described in the present invention may be selected from an organic solvent or a mixture of an organic solvent and water.
  • the organic solvent is preferably one or more of sulfoxide, sulfone, imidazolidinone, pyrrolidone, imidazolidinone, amide and alcohol ether; the sulfoxide is preferably dimethyl sulfoxide.
  • the sulfone is preferably one or more of methyl sulfone and sulfolane; and the imidazolidinone is preferably 2-imidazolidinone and One or more of 1,3-dimethyl-2-imidazolidinone;
  • the pyrrolidone is preferably N-methylpyrrolidone, N-cyclohexylpyrrolidone and N-hydroxyethylpyrrolidone One or more;
  • the imidazolinone is preferably 1,3-dimethyl-2-imidazolidinone;
  • the amide is preferably dimethylformamide and dimethylacetamide One or more of the above;
  • the alcohol ether is preferably one or more of diethylene glycol monomethyl ether, diethylene glycol monobutyl ether and dipropylene glycol monomethyl ether.
  • the photoresist residue on the wafer can be cleaned at 25 ° C to 85 ° C.
  • the specific method is as follows: The wafer containing the photoresist residue is immersed in the cleaning liquid of the present invention, and after being immersed at 25 ° C to 85 ° C for a suitable period of time, it is taken out and rinsed, and then dried by high-purity nitrogen gas.
  • the reagents and raw materials of the present invention are commercially available.
  • the clear liquid of the present invention can be obtained by simply and uniformly mixing the above components.
  • the invention adopts the following technical means: the wafer containing the photoresist is immersed in the cleaning agent, and the constant temperature oscillator is used at 25 ° C 3 ⁇ 4 85 ° C. The vibration frequency of 60 rpm was oscillated for 30 90 minutes, then washed with deionized water and then dried with high purity nitrogen. The cleaning effect of the photoresist and the corrosion of the cleaning solution on the wafer are shown in Table 2.
  • X is strictly corroded. X people Remnant.
  • the cleaning liquid of the present invention has a good cleaning effect on the photoresist and has a wide temperature range.
  • the comparison between Example 5 and Comparative Example 1 shows that the addition of polyvinylpyrrolidone facilitates the removal of the photoresist; the comparison of Example 22 with Comparative Example 2 shows that the presence of sugar or sugar alcohol is beneficial for inhibition. Corrosion of metal aluminum.
  • the cleaning liquid of the present invention has strong photoresist removal ability; strong corrosion inhibition to metal and non-metal; and large operation window. It should be understood that the wt% of the present invention refers to the mass percentage.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

L'invention concerne une solution de nettoyage à léger pouvoir décapant appropriée pour le nettoyage d'une photorésine relativement épaisse. La solution de nettoyage de la photorésine à léger pouvoir décapant contient (a) un hydroxyde d'ammonium quaternaire, (b) de l'éthanolamine, (c) un sucre ou un alcool de sucre, (d) un tensioactif et (e) un solvant. L'agent de nettoyage de la photorésine à léger pouvoir décapant permet d'éliminer efficacement la photorésine sur une tranche semi-conductrice sans attaquer le substrat métallique, par exemple l'aluminium ou le cuivre, et présente des perspectives d'application intéressantes, notamment dans le domaine du nettoyage des tranches semi-conductrices.
PCT/CN2013/001501 2012-12-17 2013-12-03 Solution décapante de photorésine WO2014094356A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210546307.2 2012-12-17
CN201210546307.2A CN103869636A (zh) 2012-12-17 2012-12-17 一种光刻胶去除剂

Publications (1)

Publication Number Publication Date
WO2014094356A1 true WO2014094356A1 (fr) 2014-06-26

Family

ID=50908316

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/001501 WO2014094356A1 (fr) 2012-12-17 2013-12-03 Solution décapante de photorésine

Country Status (3)

Country Link
CN (1) CN103869636A (fr)
TW (1) TW201426206A (fr)
WO (1) WO2014094356A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107966887A (zh) * 2017-11-24 2018-04-27 无锡南理工新能源电动车科技发展有限公司 一种晶体管液晶触摸屏中的钼铝光阻剥离液
TWI672360B (zh) * 2018-01-04 2019-09-21 才將科技股份有限公司 具有針對兩種晶格方向低選擇比（Ｓｉ（１００）／Ｓｉ（１１１））及低二氧化矽蝕刻率之矽蝕刻劑組合物
CN116083177A (zh) * 2023-01-31 2023-05-09 福建省佑达环保材料有限公司 一种用于半导体制程的水基去胶液

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105527803B (zh) * 2014-09-29 2020-08-18 安集微电子（上海）有限公司 一种光刻胶清洗液
CN104233450B (zh) * 2014-09-30 2017-11-03 东莞市新球清洗科技有限公司 一种物件电镀前的清洗方法
CN104498971B (zh) * 2014-12-30 2017-01-18 合肥华清方兴表面技术有限公司 一种快速去除金属工件表面油灰的常温无磷脱脂剂
CN106292207B (zh) * 2015-06-10 2021-06-25 安集微电子科技（上海）股份有限公司 一种光阻残留物清洗液
CN105505630A (zh) * 2015-12-07 2016-04-20 苏州市晶协高新电子材料有限公司 一种半导体工艺中用的表面处理剂及方法
US10073352B2 (en) * 2016-04-12 2018-09-11 Versum Materials Us, Llc Aqueous solution and process for removing substances from substrates
CN105861200B (zh) * 2016-04-18 2018-11-02 上海铁路通信有限公司 一种水基清洗剂及其制备方法
CN107608182A (zh) * 2017-09-19 2018-01-19 合肥惠科金扬科技有限公司 一种用于tft‑lcd光刻胶高效清洗剂
CN107664930A (zh) * 2017-09-26 2018-02-06 合肥新汇成微电子有限公司 一种用于半导体晶圆的光刻胶清洗液
CN109097201B (zh) * 2018-08-22 2021-02-05 江西宝盛半导体能源科技有限公司 一种去胶液及其制备方法与应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101146901A (zh) * 2005-01-27 2008-03-19 高级技术材料公司 用于半导体基片处理的组合物
CN101286016A (zh) * 2007-04-13 2008-10-15 安集微电子（上海）有限公司 低蚀刻性光刻胶清洗剂
CN101578341A (zh) * 2008-01-07 2009-11-11 巴斯夫欧洲公司 有机涂膜剥离用组合物及剥离有机涂膜的方法
CN102141743A (zh) * 2010-08-25 2011-08-03 上海飞凯光电材料股份有限公司 具有金属保护的光刻胶剥离液组合物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440326B1 (en) * 1998-08-13 2002-08-27 Mitsubishi Gas Chemical Company, Inc. Photoresist removing composition
CN102540774A (zh) * 2010-12-21 2012-07-04 安集微电子（上海）有限公司 一种厚膜光刻胶清洗剂

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101146901A (zh) * 2005-01-27 2008-03-19 高级技术材料公司 用于半导体基片处理的组合物
CN101286016A (zh) * 2007-04-13 2008-10-15 安集微电子（上海）有限公司 低蚀刻性光刻胶清洗剂
CN101578341A (zh) * 2008-01-07 2009-11-11 巴斯夫欧洲公司 有机涂膜剥离用组合物及剥离有机涂膜的方法
CN102141743A (zh) * 2010-08-25 2011-08-03 上海飞凯光电材料股份有限公司 具有金属保护的光刻胶剥离液组合物

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107966887A (zh) * 2017-11-24 2018-04-27 无锡南理工新能源电动车科技发展有限公司 一种晶体管液晶触摸屏中的钼铝光阻剥离液
TWI672360B (zh) * 2018-01-04 2019-09-21 才將科技股份有限公司 具有針對兩種晶格方向低選擇比（Ｓｉ（１００）／Ｓｉ（１１１））及低二氧化矽蝕刻率之矽蝕刻劑組合物
CN116083177A (zh) * 2023-01-31 2023-05-09 福建省佑达环保材料有限公司 一种用于半导体制程的水基去胶液

Also Published As

Publication number Publication date
TW201426206A (zh) 2014-07-01
CN103869636A (zh) 2014-06-18

Similar Documents

Publication Publication Date Title
WO2014094356A1 (fr) Solution décapante de photorésine
TWI609958B (zh) 用來移除表面殘餘物的清洗調配物
US20090082240A1 (en) Stripping liquid for semiconductor device, and stripping method
US7888300B2 (en) Cleaning liquid for semiconductor device and cleaning method
JP3441715B2 (ja) 水性リンス組成物及びそれを用いた方法
TWI638244B (zh) 用來移除表面殘餘物的清洗調配物
KR20030051721A (ko) 초소형 전자 기판 세정용 안정된 알카라인 조성물
WO2014089908A1 (fr) Solution de nettoyage servant à éliminer une résine photosensible
JP7114842B2 (ja) 半導体基板の残渣を除去するための洗浄用調合物
KR20180137018A (ko) 처리액, 기판 세정 방법 및 레지스트의 제거 방법
TWI816657B (zh) 清洗組成物及清洗方法
JPWO2009072529A1 (ja) 半導体デバイス用基板の洗浄方法及び洗浄液
CN1875325A (zh) 含有金属卤化物腐蚀抑制剂的碱性后等离子体蚀刻/灰化残余物去除剂和光致抗蚀剂剥离组合物
TW580516B (en) Non-corrosive cleaning composition and method for removing photoresist and/or plasma etching residues
KR20160097201A (ko) 표면 잔류물 제거용 세정 제형
WO2008071077A1 (fr) Composé nettoyant pour éliminer un photorésist
WO2008046305A1 (fr) Agent de nettoyage pour photoresist faiblement gravée et procédé de nettoyage correspondant
US11549086B2 (en) Cleaning agent and preparation method and use thereof
CN116286222A (zh) Tin拉回和清洁组合物
WO2014079145A1 (fr) Solution nettoyante permettant d'éliminer une photorésine
TW201723166A (zh) 一種低蝕刻的去除光阻殘留物的清洗液
WO2014071689A1 (fr) Liquide nettoyant pour l'élimination de résidus formant barrière à la lumière
JP2006191002A (ja) 剥離剤組成物
TWI748369B (zh) 用於鋁氮化物的蝕刻溶液及方法
TWI295751B (en) Aqueous alkaline photoresist cleaning composition and method using the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13864335

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13864335

Country of ref document: EP

Kind code of ref document: A1