CN116083177A - 一种用于半导体制程的水基去胶液 - Google Patents
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Abstract
本发明公开了一种用于半导体制程的水基去胶液，用于半导体晶圆制造中。该水基去胶液通过添加特定复配的阴‑非离子表面活性剂，产生协同效应和增效作用，配合水溶性有机助剂优化组合，极大的提高体系表面性能，强化了溶胀效果的同时对光阻小分子的溶解能力强，具有较高的清除效率，同时该水基去胶液水溶性好，使用温度低，使用寿命长，泡沫低，对产品良率波动影响小，材料组成对环境友好，对人体健康影响小能够满足半导体制程的工艺要求。
Description
技术领域
本发明属于半导体制造领域，具体涉及一种用于半导体制程的水基去胶液。
背景技术
半导体制造工艺中，光刻制程工艺是芯片制造工艺中的关键环节，需要通过多次图形掩膜照射曝光及蚀刻等制程在硅晶圆上形成多层的细微电路图形。光刻的基本原理是利用光致抗蚀剂（或称光刻胶）感光后因光化学反应而形成耐蚀性的特点，将掩模板上的图形刻制到被加工表面上。当蚀刻工艺结束之后，光刻胶应全部去除，这一步骤简称去胶。为避免对被处理表面的任何损伤及腐蚀，目前一般使用低温下温和的化学方法除去光刻胶。
目前主要的水基去胶液是以亚砜、吡咯烷酮、加上季铵碱及水按一定比例配制的。与传统有机溶剂型去胶液相比，不但成本有优势，而且环保性和对操作人员的安全性都有所提高。但是目前水基去胶液还存在着光刻胶除去效率低、去胶液使用温度高，使用寿命短、对金属层容易腐蚀导致良率降低等现象，严重影响了其使用推广。
发明内容
本发明的目的在于克服现有技术中存在的缺陷，提供一种用于半导体制程的水基去胶液，该水基去胶液为水溶性混合物，通过添加特定的复配表面活性剂，能够高效的除去光刻胶，无残渣，同时对金属层腐蚀性低、使用寿命长，绿色环保。
为实现上述目的，本发明的技术方案为：
一种用于半导体制程的水基去胶液，以质量百分含量计，其组成如下：
醇胺溶剂 10%-25%；
水溶性有机溶剂 15%-25%；
表面活性剂 5%-15%；
金属抗蚀剂 0.05%-0.5%；
去离子水 余量；
总质量分数之和为100%。
进一步地，上述用于半导体制程的水基去胶液中，所述醇胺溶剂为2-甲胺基-3-吡啶甲醇。该醇胺类溶剂可提供去除光刻胶分子的碱性条件，其杂环结构与光刻胶分子结构具有相似相溶的特点，能够在常温下高效迅速的去除晶圆上的光刻胶分子，并且具有极佳的溶解性，可以大大提高去胶液的使用范围。
进一步地，上述用于半导体制程的水基去胶液中，所述水溶性有机溶剂，具体的可以为二乙二醇单丁醚、三乙二醇醚单丁醚、N-甲基哌嗪、N-乙基哌嗪中的一种。所述的几种有机溶剂具在有较好的水溶性的同时，能有效溶胀光刻胶分子，促进光刻胶的去除，同时也能溶解小分子的光刻胶分子，提高去胶液的使用寿命。
进一步地，上述用于半导体制程的水基去胶液中，所述表面活性剂为非离子表面活性剂月桂基糖苷（APG）与阴离子表面活性剂α-烯基磺酸钠(AOS)复配的表面活性剂，其中APG和AOS的质量比为2-4:16-18，具体可以为4:16、3:17、2:18，其中3:17的配比效果最佳。通过非离子-阴离子表面活性剂的复配的协同作用，提高了溶液的表面活性，同时也提高了去胶液体系水溶稳定性，加快了光刻胶的去除速度，特别是边缘及有图形部分的光刻胶能彻底去除干净，能显著提高良率。
进一步地，上述用于半导体制程的水基去胶液中，所述金属抗蚀剂为糖醇类化合物，具体的为阿东糖醇。阿东糖醇含有多个羟基团，与水中氢离子形成氢键，使得光刻胶去除后与半导体衬底之间产生一个可渗透空间，有效的提高蚀刻后图形周围的光刻胶同时其多羟基结构可防止底部金属膜被去胶液腐蚀。其易清洗，不会像苯并***类的抗试剂容易残留而影响到后续工艺。
进一步地，上述用于半导体制程的水基去胶液中，所述去离子水为电子级去离子水，在25℃时，其电阻率不低于18MΩ。
本发明的显著优点在于：通过添加特殊的醇胺2-甲胺基-3-吡啶甲醇，其杂环结构与光刻胶分子结构具有相似相溶的特点，能够在常温下高效迅速的去除晶圆上的光刻胶分子，通过添加特定比例复配的非离子-阴离子表面活性剂，产生协同作用，有效降低表面张力，提高了溶液的表面活性，同时也提高了去胶液体系水溶稳定性，加快了光刻胶的去除速度，特别是边缘及有图形部分的光刻胶能彻底去除干净，能显著提高良率；水性的有机助剂，能起到助溶效果，使去胶液的对不同光刻胶分子都有很好的溶胀作用，有利于水基去胶液在使用时的稳定性。糖醇类金属抗蚀剂能有效防止底部金属膜被去胶液腐蚀。其易清洗。该水基去胶液水溶性好，使用寿命长，材料组成对环境友好，能够满足半导体制程的工艺要求。
具体实施方式
下面将结合本发明实施例，对本发明实施例中的技术方案进行清楚完整的描述，本发明的示意性实施方式及其说明仅用于解释本发明，并不作为本发明的限定。
实施例中所使用的实验方法如无特殊说明，均为常规方法。
实施例中所用的材料、试剂等，如无特殊说明，均可从商业途径得到。
实施例和比较例：一种用于半导体制程使用的水基去胶液。
根据下表1所示的组成和质量百分含量分别制备了实施例和比较例的水基去胶液。其配制方法为：在常温下先将去离子水加入搅拌釜，在30r/min的转速下依次加入醇胺溶剂，水溶性有机助剂加完后调节转速至45r/min再依次按比例添加非离子和阴离子表面活性剂，添加完后搅拌30分钟，最后加入金属抗蚀剂，全部添加完毕后搅拌10分钟，最后以孔径为2μm和孔径为0.5μm的滤芯按顺序过滤即可得到水基去胶液。
BDG：二乙二醇丁醚 BTG：三乙二醇丁醚 NMPRZ：N-甲基哌嗪
NEPRZ：N-乙基哌嗪 NMP:N-甲基吡咯烷酮 DMSO：二甲基亚砜
DMAc：二甲基乙酰胺 APG-月桂基糖苷AGP1214 AOS-α-烯基磺酸钠
MOA-4:脂肪醇聚氧乙烯醚 6501:椰子油脂肪酸二乙醇酰胺
AES:脂肪醇聚氧乙烯醚硫酸钠； S-15:肪醇聚氧乙烯醚硫酸铵盐
以上材料均可通过市售购得
实验例：水基去胶液性能的测定实验
为了评价上述实施例1-7和对比例1-14的数种水基去胶液组合物的性能，通过下述试验进行测试。
一、光刻胶去除能力
用6寸硅晶圆，分别沉积800Å的钨膜和600Å的氧化钛膜，旋转涂布光刻胶，使膜厚达到1.0μm。热板真空预烘60s（70℃，0.05MPa），将掩膜版放在光刻胶上方，曝光机曝光。以2.38%的TMAH水溶液显影（21℃，60s），热板硬烘（120℃，110s）。使用气体干法蚀刻显影后未被光刻胶覆盖的钨膜和氧化钛膜，形成金属布线。
将各个配方的去胶液倒入容器中，然后将上述样品割成尺寸2cm*2cm的芯片，浸入容器中的去胶液中，在45℃下浸泡5min，取出用去离子水漂洗干净，再用高纯氮气吹干。通过扫描电镜（SEM）观察图案表面和图案侧壁的光刻胶是否有残留。评价效果如下：
○：表面和侧壁光刻胶完全除去；
△：表面和侧壁光刻胶基本除去，但能看到少量残留；
×：表面和侧壁光刻胶明显未除去干净。
二、Cu腐蚀测试。
将铜引线框分别浸泡于各个配方的去胶液中，加热去胶液到60℃，浸泡3min后取出，用去离子水漂洗干净，再用高纯氮气吹干。通过扫描电镜观察样品表面。评价效果如下：
○：引线框铜表面无腐蚀
△：引线框铜表面有轻微腐蚀
×：引线框铜表面有很明显的腐蚀
三、Al腐蚀测试
将铝引线框分别浸泡于各个配方的去胶液中，加热去胶液到60℃，浸泡3min后取出，用去离子水漂洗干净，再用高纯氮气吹干。通过扫描电镜观察样品表面。评价效果如下：
○：引线框铝表面无腐蚀
△：引线框铝表面有轻微腐蚀
×：引线框铝表面有很明显的腐蚀
四、水分挥发情况测定
水基去胶液由于使用时会加热，导致水分容易挥发。从而引起去胶液使用寿命降低，不断补液。称量50g去胶液于三角瓶中，放置于恒温50℃的水浴锅中，加热1h和3小时，通过称重确定水分挥发情况。
评价效果如下：
○：1小时＜1%，3小时＜2.5%
△：1小时,1%～2%;2.5%＜3小时＜5%
×：1小时＞2%；3小时＞5%
五、泡沫情况测定
去胶液若起泡性太强会影响去胶效果，而且容易残留。因此在保证去胶效果的同时，低泡性能更有优势。具体发泡力测试如下：
在试管中分别装入5mL不同配方的去胶液，用力摇动15s，测试摇动后的泡沫高度以及静置30秒后的泡沫高度，泡沫高度越低越好。泡沫高度评判结果如下：
○：停止时泡沫高度＜2cm，静置后＜1cm
△：停止时泡沫高度2～4cm，静置后＜1.5cm
×：停止时泡沫高度＞5cm，静置后＞1.5cm
测试结果示于表2中
分析表1、表2的对比例与实施例实验结果，可以看出，在设定范围的比例内，去胶液对光刻胶的去除能力，腐蚀抑制情况以及使用寿命和使用工艺的低泡性都表现优异。对比例1中醇胺的含量太低，因此光刻胶的去除性能不佳，另外体系的pH不稳定导致对Al布线有轻微腐蚀，同时体系水分的挥发较快，会影响使用寿命；对比例2中有机溶剂含量偏低，对光刻胶溶胀较差会导致光刻胶去除效率受到影响；对比例3-5尝试了其他水溶性溶剂，但是去胶效果和对布线的腐蚀都有明显差异；对比例6-7中复配表面活性剂没有达到最优配比，因此体系的表面张力较高，影响到了光刻胶去除效果；比较例8-13尝试了其他非-阴表面活性剂复配，可以看到实际的去胶效果和实施例还是有较大差距，一下表面活性剂还会影响到布线的腐蚀情况，还有一些表面活性剂泡沫较多，不适合工艺要求；比较例14没有添加防腐蚀剂，导致了金属布线腐蚀较为严重。
附：非-阴离子表面活性剂复配实验
以实施例5的各组分配比数据为基准，在25℃下，用TX-500C 旋转滴界面张力仪测定不同复配比例的混合液体系的表面张力，列与表三中。从实验数据可以看出：复配体系具有较单一表面活性剂体系显著优异的表面活性。复配体系溶液在协同效应下，具有降低体系表面张力的作用，特别是当nAGP：nAOS=17∶3时，表现出最佳协同效应和增效作用，体系的表面张力最大程度的降低，明显改善了对光刻胶的去除能力。同时也以其他非-阴离子表面活性剂复配体系作比较，达不到AGP与AOS的复配效果。
综上，本发明的积极进步结果在于：一种半导体制程使用的水基去胶液，通过添加特定的复配的非-阴表面活性剂，在协同效应和增效作用下，能够高效的除去光刻胶，无残渣，同时对金属层腐蚀性低、使用寿命长，低泡环保。
上述实施例对本发明进行了详细描述，但其只是作为范例，并非因此限制本发明的专利范围。凡是利用本发明说明书对本发明进行的等同任何修改和替代也都在本发明的范畴之中，均包括在本发明的专利保护范围内。
Claims (9)
1.一种用于半导体制程的水基去胶液，其特征在于，以质量百分含量计，其组成如下：
醇胺溶剂 10%-25%；
水溶性有机溶剂 15%-25%；
表面活性剂 5%-15%；
金属抗蚀剂 0.05%-0.5%；
去离子水 余量；
总质量分数之和为100%。
2.根据权利要求1所述的用于半导体制程的水基去胶液，其特征在于，所述醇胺溶剂为2-甲胺基-3-吡啶甲醇。
3.根据权利要求1所述的用于半导体制程的水基去胶液，其特征在于，所述水溶性有机溶剂为二乙二醇单丁醚、三乙二醇醚单丁醚、N-甲基哌嗪、N-乙基哌嗪中的一种。
4.根据权利要求1所述的用于半导体制程的水基去胶液，其特征在于，所述表面活性剂为月桂基糖苷与α-烯基磺酸钠复配的表面活性剂。
5.根据权利要求4所述的用于半导体制程的水基去胶液，其特征在于，所述表面活性剂中月桂基糖苷与α-烯基磺酸钠的摩尔比为2-4:16-18。
6.根据权利要求5所述的用于半导体制程的水基去胶液，其特征在于，所述表面活性剂中月桂基糖苷与α-烯基磺酸钠的摩尔比为3:17。
7.根据权利要求1所述的用于半导体制程的水基去胶液，其特征在于，所述金属抗蚀剂为糖醇类化合物。
8.根据权利要求7所述的用于半导体制程的水基去胶液，其特征在于，所述金属抗蚀剂为阿东糖醇。
9.根据权利要求1所述的用于半导体制程的水基去胶液，其特征在于，所述去离子水为电子级去离子水，在25℃时，其电阻率不低于18MΩ。
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| CN106154772A (zh) * | 2016-08-01 | 2016-11-23 | 江阴润玛电子材料股份有限公司 | 一种半导体凸块制程用正胶去胶液 |
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| WO2014094356A1 (zh) * | 2012-12-17 | 2014-06-26 | 安集微电子科技(上海)有限公司 | 一种光刻胶去除剂 |
| CN106154772A (zh) * | 2016-08-01 | 2016-11-23 | 江阴润玛电子材料股份有限公司 | 一种半导体凸块制程用正胶去胶液 |
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