WO2014079145A1 - Solution nettoyante permettant d'éliminer une photorésine - Google Patents

Solution nettoyante permettant d'éliminer une photorésine Download PDF

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Publication number
WO2014079145A1
WO2014079145A1 PCT/CN2013/001375 CN2013001375W WO2014079145A1 WO 2014079145 A1 WO2014079145 A1 WO 2014079145A1 CN 2013001375 W CN2013001375 W CN 2013001375W WO 2014079145 A1 WO2014079145 A1 WO 2014079145A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning solution
cleaning
hydroxide
photoresist
solution according
Prior art date
Application number
PCT/CN2013/001375
Other languages
English (en)
Chinese (zh)
Inventor
孙广胜
刘兵
彭洪修
颜金荔
徐海玉
Original Assignee
安集微电子科技(上海)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子科技(上海)有限公司 filed Critical 安集微电子科技(上海)有限公司
Publication of WO2014079145A1 publication Critical patent/WO2014079145A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Definitions

  • the present invention relates to a cleaning liquid, and more particularly to a cleaning liquid for removing a photoresist. Background technique
  • a photoresist is required to form a mask, which needs to be removed after the microsphere is successfully implanted, but since the photoresist is thick, it is completely removed. More difficult.
  • a more common method for improving the removal is to extend the soaking time, increase the soaking temperature, and use a more aggressive solution, but this often results in corrosion of the wafer substrate and corrosion of the microspheres, resulting in a significant reduction in wafer yield.
  • the photoresist cleaning liquid is mainly composed of a polar organic solvent, a strong alkali, and/or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning liquid or rinsing the semiconductor wafer with the cleaning liquid.
  • WO2006/056298A1 utilizes an alkaline cleaning solution consisting of tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMS0), ethylene glycol (EG) and water for cleaning a copper substrate photoresist, Basically non-corrosive to metallic copper, but it is corrosive to metallic aluminum; for example, US5529887 consists of potassium hydroxide (K0H), mercapto diol monodecyl ether, water-soluble fluoride and water, etc. Immersion in the cleaning solution removes the thick film photoresist on the metal and dielectric substrates at 40-90 °C. It has a high corrosion to the semiconductor wafer substrate.
  • TMAH tetramethylammonium hydroxide
  • DMS0 dimethyl sulfoxide
  • EG ethylene glycol
  • water water for cleaning a copper substrate photoresist
  • K0H potassium hydroxide
  • mercapto diol monodecyl ether
  • the technical problem to be solved by the present invention is to provide a thick film photoresist cleaning for the existing thick film photoresist cleaning liquid, which has insufficient cleaning ability or strong corrosion to the semiconductor wafer pattern and the substrate.
  • a photoresist cleaner that is highly capable and less corrosive to semiconductor wafer patterns and substrates.
  • the present invention provides a cleaning liquid containing a quaternary ammonium hydroxide, an alcohol amine, a c 4 -c 6 polyol, and a solvent.
  • the content of the quaternary ammonium hydroxide is 0.1 to 10% by weight (mass%), preferably 1 to 5 wt%
  • the content of the alkanolamine is not more than 5% by weight, i.e., less than 5% by weight.
  • the content of the C 4 -C 6 polyol is 0.1 to 10 wt %, preferably 0. b 5 wt %
  • the remaining portion of the cleaning liquid is a solvent.
  • the cleaning liquid for removing photoresist residues disclosed in the present invention does not contain abrasive particles.
  • the quaternary ammonium hydroxide is preferably a quaternary ammonium hydroxide including tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, methyltriethylamine.
  • ammonium hydroxide and hydroxyethyltrimethylammonium hydroxide One or more of ammonium hydroxide and hydroxyethyltrimethylammonium hydroxide.
  • sodium hydroxide, potassium hydroxide or the like is generally used as an alkaline component, but such a substance has a tendency to absorb co 2 in the air to generate a solid, which affects side effects such as washing, and therefore, quaternary ammonium hydroxide is used in the present application. Things.
  • the alkanolamine is preferably an alcoholamine which is monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, 2-(diethylamino)ethanol, ethyldiethanolamine and diglycolamine. One or several of them.
  • the presence of an alkanolamine is advantageous for increasing the solubility of the quaternary ammonium hydroxide.
  • the C 4 -C 6 polyol is preferably one or more of erythritol, xylitol, glucose, sorbitol, and mannitol.
  • the organic solvent is preferably one or more of sulfoxide, sulfone, imidazolium, imidazolidinone, and amide; wherein the sulfoxide is preferably dimethyl sulfoxide; the sulfone is preferably Sulfolane; imidazolium is preferably 1,3-dimethyl-2-imidazolium; imidazolidinone is preferably 1,3-dimethyl-2-imidazole
  • the amide is preferably one or more of dimethylformamide and dimethylacetamide.
  • the photoresist on the wafer can be cleaned at 25 ° C to 90 ° C.
  • the specific method is as follows: The photoresist containing the photoresist is immersed in the low-etching photoresist cleaning agent of the present invention, and after immersing at 25 ° C to 90 ° C for a suitable period of time, it is taken out and washed, and then dried by high-purity nitrogen gas.
  • the positive progress of the invention is as follows:
  • the cleaning liquid of the invention has strong photoresist removal ability; strong corrosion inhibition ability to metal and non-metal; and large operation window. detailed description
  • the polishing liquid was prepared in accordance with the ingredients of the respective examples in Tables 1 and 2 and the comparative examples, and the mixture was uniformly mixed.
  • Table 1 Formulations of Examples 1-20 of the present invention are examples of the present invention.
  • the present invention adopts the following technical means: immersing the wafer containing the photoresist in the cleaning agent, and using a constant temperature oscillator at 25 to 90 ° C to vibrate at about 60 rpm. The frequency was oscillated for 5 to 60 minutes, then washed with deionized water and then dried with high purity nitrogen.
  • Table 3 The cleaning effect of the photoresist and the corrosion of the cleaning solution on the wafer are shown in Table 3.
  • Table 3 compare wafer cleaning of the embodiment and some embodiments
  • Corrosion ⁇ Basically non-corrosive; Cleaning condition: ⁇ Completely removed;
  • the cleaning liquid of the present invention has a good cleaning effect on the photoresist and has a wide temperature range.
  • Example 1 As can be seen from the comparison of Example 1 with Comparative Example 1, the addition of no C 4 -C 6 polyol in the solution system caused moderate corrosion to the AI substrate.
  • Example 7 As can be seen from the comparison of Example 7 with Comparative Example 1, the addition of quaternary ammonium hydroxide in the solution system caused a large amount of residual photoresist.
  • the cleaning liquid of the present invention has strong photoresist removal ability; strong corrosion inhibition ability to metal and non-metal; and large operation window.
  • wt% of the present invention refers to the mass percentage.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La présente invention concerne une solution nettoyante possédant une faible propriété de gravure adaptée au nettoyage d'une photorésine épaisse, et son procédé de nettoyage. La solution nettoyante pour photorésine possédant une faible propriété de gravure contient de l'hydroxyde d'ammonium quaternaire, une alkylolamine, un polyol C4-C6 et un solvant. La solution nettoyante pour photorésine possédant une faible propriété de gravure peut éliminer efficacement la photorésine d'une tranche semi-conductrice, tout en ne présentant fondamentalement aucun danger pour un substrat tel que les métaux aluminium, cuivre et analogues, ce qui leur permet d'avoir une bonne perspective d'applications dans le domaine du nettoyage des tranches semi-conductrices.
PCT/CN2013/001375 2012-11-22 2013-11-12 Solution nettoyante permettant d'éliminer une photorésine WO2014079145A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210477152.1A CN103838091A (zh) 2012-11-22 2012-11-22 一种去除光刻胶的清洗液
CN201210477152.1 2012-11-22

Publications (1)

Publication Number Publication Date
WO2014079145A1 true WO2014079145A1 (fr) 2014-05-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/001375 WO2014079145A1 (fr) 2012-11-22 2013-11-12 Solution nettoyante permettant d'éliminer une photorésine

Country Status (3)

Country Link
CN (1) CN103838091A (fr)
TW (1) TW201420752A (fr)
WO (1) WO2014079145A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105527803B (zh) * 2014-09-29 2020-08-18 安集微电子（上海）有限公司 一种光刻胶清洗液
CN107577121A (zh) * 2017-08-29 2018-01-12 昆山艾森半导体材料有限公司 一种光刻胶去胶液
CN109976111A (zh) * 2017-12-28 2019-07-05 上海飞凯光电材料股份有限公司 一种光刻胶清洗液
CN112226297A (zh) * 2020-11-25 2021-01-15 上海源育节能环保科技有限公司 一种清香环保清洗剂及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440326B1 (en) * 1998-08-13 2002-08-27 Mitsubishi Gas Chemical Company, Inc. Photoresist removing composition
CN101187788A (zh) * 2006-11-17 2008-05-28 安集微电子（上海）有限公司 低蚀刻性较厚光刻胶清洗液
CN102073226A (zh) * 2009-11-20 2011-05-25 安集微电子（上海）有限公司 一种厚膜光刻胶清洗液及其清洗方法
CN102141743A (zh) * 2010-08-25 2011-08-03 上海飞凯光电材料股份有限公司 具有金属保护的光刻胶剥离液组合物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102338994B (zh) * 2010-07-23 2014-12-31 安集微电子（上海）有限公司 一种光刻胶的清洗液
CN102540774A (zh) * 2010-12-21 2012-07-04 安集微电子（上海）有限公司 一种厚膜光刻胶清洗剂

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440326B1 (en) * 1998-08-13 2002-08-27 Mitsubishi Gas Chemical Company, Inc. Photoresist removing composition
CN101187788A (zh) * 2006-11-17 2008-05-28 安集微电子（上海）有限公司 低蚀刻性较厚光刻胶清洗液
CN102073226A (zh) * 2009-11-20 2011-05-25 安集微电子（上海）有限公司 一种厚膜光刻胶清洗液及其清洗方法
CN102141743A (zh) * 2010-08-25 2011-08-03 上海飞凯光电材料股份有限公司 具有金属保护的光刻胶剥离液组合物

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TW201420752A (zh) 2014-06-01
CN103838091A (zh) 2014-06-04

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