WO2013105166A1 - Power conversion apparatus - Google Patents

Power conversion apparatus Download PDF

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Publication number
WO2013105166A1
WO2013105166A1 PCT/JP2012/007310 JP2012007310W WO2013105166A1 WO 2013105166 A1 WO2013105166 A1 WO 2013105166A1 JP 2012007310 W JP2012007310 W JP 2012007310W WO 2013105166 A1 WO2013105166 A1 WO 2013105166A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat
power module
heat transfer
substrate
semiconductor power
Prior art date
Application number
PCT/JP2012/007310
Other languages
French (fr)
Japanese (ja)
Inventor
泰仁 田中
美里 柴田
Original Assignee
富士電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士電機株式会社 filed Critical 富士電機株式会社
Priority to CN201280061309.0A priority Critical patent/CN103999343B/en
Publication of WO2013105166A1 publication Critical patent/WO2013105166A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention supports a mounting board on which a circuit component including a heat generating circuit component for driving the semiconductor switching element is mounted at a predetermined interval on a semiconductor power module including a semiconductor switching element for power conversion.
  • the present invention relates to a power conversion device.
  • a power conversion device described in Patent Document 1 As this type of power conversion device, a power conversion device described in Patent Document 1 is known.
  • a water cooling jacket is disposed in a casing, and a semiconductor power module including an IGBT as a semiconductor switching element for power conversion is disposed on the water cooling jacket to cool the power conversion apparatus.
  • a control circuit board is disposed in the housing at a predetermined distance on the opposite side of the semiconductor power module from the water-cooling jacket, and the heat generated by the control circuit board is supported by the heat dissipation member. The heat transmitted to the metal base plate is further transmitted to the water cooling jacket through the side wall of the casing that supports the metal base plate.
  • the housing is often required to be waterproof and dustproof, apply a liquid sealant or sandwich rubber packing between the metal base plate and the housing and between the housing and the water cooling jacket. Etc. are generally performed. Liquid sealants and rubber packings generally have a low thermal conductivity, and there is an unsolved problem that the thermal resistance increases and the cooling efficiency decreases due to the presence of these in the thermal cooling path.
  • the present invention has been made paying attention to the unsolved problems of the above-described conventional example, and efficiently cools the cooling body without interposing a casing in the heat radiation path of the heat generating circuit component mounted on the substrate. It aims at providing the power converter device which can thermally radiate.
  • a first embodiment of a power conversion device includes a semiconductor power module including a cooling member bonded to a cooling body on one surface, and the other surface side of the semiconductor power module, And a mounting board on which circuit components including a heat generating circuit component for driving the semiconductor power module are mounted.
  • the cooling member has a substrate heat absorbing portion extending in the vicinity of the mounting substrate. According to this configuration, the heat generated by the heat-generating component of the mounting board can be absorbed by the board heat-absorbing portion of the cooling member that cools the semiconductor power module and radiated to the cooling body, and the mounting board can be provided without providing a separate heat dissipation path. It is possible to reliably dissipate the heat generated by the heat generating parts.
  • the 2nd aspect of the power converter device which concerns on this invention has the said board
  • the 3rd aspect of the power converter device which concerns on this invention has the said board
  • the heat transfer member interposed between the mounting board and the heat transfer plate can reliably transfer the heat generated by the heat generating components of the mounting board to the heat transfer plate.
  • a fourth aspect of the power conversion device is a semiconductor power module in which a semiconductor switching element for power conversion is built in a case body, and a cooling member that contacts the cooling body is formed on one surface of the case body. And a mounting substrate on which circuit components including a heat generating circuit component for driving the semiconductor switching element are mounted and supported at a predetermined distance from the other surface of the semiconductor power module. And the said cooling member has a board
  • the heat generated by the heat-generating component of the mounting board can be absorbed by the board heat-absorbing portion of the cooling member that cools the semiconductor power module and radiated to the cooling body, and the mounting board can be provided without providing a separate heat dissipation path. It is possible to reliably dissipate the heat generated by the heat generating parts.
  • the 5th form of the power converter device which concerns on this invention is provided with the heat exchanger plate which heat-transfers the heat_generation
  • the heat generated by the mounting substrate can be reliably transferred to the substrate heat absorbing portion of the cooling member via the heat transfer plate, so that the heat dissipation effect can be improved and the mounting substrate can be prevented from bending. be able to.
  • a heat transfer member is interposed between the mounting substrate and the heat transfer plate. According to this configuration, the heat transfer member interposed between the mounting board and the heat transfer plate can reliably transfer the heat generated by the heat generating components of the mounting board to the heat transfer plate.
  • the substrate heat absorbing portion extends from one surface side of the semiconductor power module to the other surface side through the side surface of the semiconductor power module. According to this configuration, it is possible to absorb the heat generated by the heat-generating component mounted on the mounting board and dissipate it to the cooling body without changing the specifications of the semiconductor power module.
  • the substrate heat absorbing portion extends from one surface side of the semiconductor power module to the other surface side through the inside of the semiconductor power module. According to this configuration, since the substrate heat absorbing portion extends to the other surface side through the inside of the semiconductor power module, heat generated in the semiconductor power module can also be absorbed.
  • the cooling member is made of a metal material having high thermal conductivity. According to this configuration, since the cooling member is made of a metal material having high thermal conductivity such as aluminum, aluminum alloy, copper, etc., the heat generated by the heat generating component of the mounting board can be efficiently radiated to the cooling body.
  • the said heat exchanger plate is comprised with the metal material with high heat conductivity.
  • the heat transfer plate is made of a metal material having high thermal conductivity such as aluminum, aluminum alloy, copper, etc.
  • heat generated by the heat generating component of the mounting substrate can be transferred to the substrate heat absorbing portion of the cooling member.
  • the 11th aspect of the power converter device which concerns on this invention is comprised by the insulator in which the said heat-transfer member has insulation. According to this configuration, since the heat transfer member inserted between the mounting board and the heat transfer plate has an insulating property, even when the heat transfer plate is made of a metal material having high thermal conductivity, electrical insulation is ensured. can do.
  • the 12th aspect of the power converter device which concerns on this invention is comprised by the elastic body in which the said heat-transfer member has a stretching property. According to this configuration, since the heat transfer member has elasticity, the contact area with the circuit component mounted on the mounting board can be widened, and efficient heat transfer can be performed.
  • the heat transfer member is formed of an elastic body having elasticity, and the heating circuit component is mounted on the heat transfer member side mounting surface of the mounting board.
  • the heat transfer member has elasticity, the contact area with the heat generating circuit component mounted on the mounting board can be widened, and more efficient heat transfer can be performed.
  • the heat generated by the mounting board on which the circuit components including the heat generating circuit components are mounted can be absorbed by the substrate heat absorbing portion of the cooling member that cools the semiconductor power module and can be dissipated to the cooling body. Heat generated from the semiconductor power module and the mounting substrate can be efficiently radiated to the cooling body. For this reason, since a housing
  • FIG. 8 is a plan view of FIG. 7. It is sectional drawing which shows the other example of a cooling member.
  • FIG. 1 is a cross-sectional view showing the overall configuration of a power converter according to the present invention.
  • reference numeral 1 denotes a power converter
  • the power converter 1 is housed in a housing 2.
  • the casing 2 is formed by molding a synthetic resin material, and includes a lower casing 2A and an upper casing 2B that are divided vertically with a cooling body 3 having a water-cooling jacket structure interposed therebetween.
  • the lower housing 2A is a bottomed rectangular tube.
  • the lower housing 2A is covered with a cooling body 3 at the open top, and a film capacitor 4 is accommodated therein.
  • the upper housing 2B includes a rectangular tube 2a having an open upper end and a lower end, and a lid 2b that closes the upper end of the rectangular tube 2a.
  • the lower end of the rectangular tube 2a is closed by the cooling body 3.
  • a sealing material such as application of a liquid sealant or sandwiching rubber packing is interposed between the lower end of the rectangular tube 2a and the cooling body 3.
  • a water supply port 3 a and a water discharge port 3 b of cooling water as a cooling medium are opened to the outside of the housing 2.
  • These water supply port 3a and drainage port 3b are connected to a cooling water supply source such as a radiator (not shown) via a flexible hose, for example.
  • the cooling body 3 is formed, for example, by injection molding aluminum or aluminum alloy having high thermal conductivity. And the cooling body 3 is made into the flat surface where the upper surface and the lower surface are mutually parallel, and the wide water supply channel
  • the power conversion apparatus 1 includes a semiconductor power module 11 that incorporates, for example, an insulated gate bipolar transistor (IGBT) as a semiconductor switching element that constitutes, for example, an inverter circuit for power conversion.
  • This semiconductor power module 11 has an IGBT built in a flat rectangular parallelepiped insulative case body 12, and the lower surface of the case body 12 has high thermal conductivity such as aluminum, aluminum alloy, copper (for example, 100 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more)
  • the cooling member 13 made of a metal material is in contact.
  • the cooling member 13 is in contact with the lower surface of the case body 12 of the semiconductor power module 11 and extends in the longitudinal direction of the case body 12 so as to be slightly longer than both ends.
  • the bottom plate portion 13a is formed in a U-shaped cross section with substrate heat absorbing portions 13b and 13c that are bent from both ends in the longitudinal direction and extend upward through both side surfaces in the longitudinal direction of the case body 12.
  • a female screw portion 13d is formed on the upper end side of the substrate heat absorbing portions 13b and 13c.
  • case body 12 and the cooling member 13 are formed with insertion holes 15 through which fixing screws 14 as fixing members are inserted at the four corners as viewed from above.
  • substrate fixing portions 16 having a predetermined height are formed to protrude at four locations inside the insertion hole 15.
  • a drive circuit board 21 on which a drive circuit for driving an IGBT built in the semiconductor power module 11 is mounted is fixed to the upper end of the board fixing portion 16.
  • a control circuit, a power supply circuit, and the like including a heat generation circuit component having a relatively large heat generation amount or a high heat generation density for controlling the IGBT built in the semiconductor power module 11 with a predetermined interval above the drive circuit board 21.
  • a control circuit board 22 as a mounting board on which is mounted is fixed.
  • the drive circuit board 21 inserts the male screw part 24a of the joint screw 24 into the insertion hole 21a formed at a position facing the board fixing part 16, and the male screw part 24a is inserted into the board fixing part. It is fixed by screwing into a female screw portion 16a formed on the upper surface of 16.
  • the control circuit board 22 inserts a fixing screw 25 into an insertion hole 22 a formed at a position facing the female screw portion 24 b formed at the upper end of the joint screw 24.
  • the joint screw 24 is fixed by being screwed to the female thread portion 24b.
  • the control circuit board 22 is supported by the heat transfer plate 32 so as to form a heat radiation path to the cooling body 3.
  • the heat transfer plate 32 is made of a metal having a high thermal conductivity (for example, 100 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more) such as aluminum, an aluminum alloy, or copper. Further, as shown in FIG. 2, the heat transfer plate 32 has protrusions 32 a and 32 b protruding from the control circuit board 22 and the heat transfer member 35 on both ends in the longitudinal direction of the case body 12 of the semiconductor power module 11. Mounting flange portions 32c and 32d extending downward from both ends of the protruding portions 32a and 32b are formed.
  • each of the attachment flange portions 32c and 32d is formed so as to come into contact with the outside of the tip end portions of the substrate heat absorption portions 13b and 13c of the cooling member 13 described above.
  • the mounting flange portions 32c and 32d are brought into contact with the substrate heat absorbing portions 13b and 13c by screwing the fixing screws 33 into the female screw portions 13d of the substrate heat absorbing portions 13b and 13c through the insertion holes 32e formed therein. It is fixed in the state.
  • the control circuit board 22 is fixed to the heat transfer plate 32 by a fixing screw 36 via a heat transfer member 35.
  • the heat transfer member 35 is an elastic body having elasticity, and has the same outer dimensions as the control circuit board 22. As the heat transfer member 35, a member having improved heat transfer property by interposing a metal filler inside silicon rubber is applied.
  • the connection between the control circuit board 22 and the heat transfer plate 32 includes a spacer 40 as a gap adjustment member having a heat transfer plate management height H lower than the thickness T of the heat transfer member 35.
  • the spacer 40 is temporarily fixed by bonding or the like to the outer peripheral side of the female screw portion 41 to which the fixing screw 36 formed on the heat transfer plate 32 is screwed.
  • the heat transfer plate management height H of the spacer 40 is set so that the compression rate of the heat transfer member 35 is about 5 to 30%.
  • the heat transfer member 35 is formed with an insertion hole 35a through which the joint screw 24 can be inserted and an insertion hole 35b through which the spacer 40 can be inserted. Then, the heat transfer member 35 is placed on the heat transfer plate 32 so that the spacer 40 temporarily fixed to the heat transfer plate 32 is inserted into the insertion hole 35 b, and the control circuit board 22 is placed on the heat transfer plate 32. Is placed so that the heat generating circuit component 39 is in contact with the heat transfer member 35. In this state, the fixing screw 36 is screwed into the female screw portion 41 of the heat transfer plate 32 through the insertion hole 22b of the control circuit board 22 and the central opening of the spacer 40. Then, the fixing screw 36 is tightened until the upper surface of the heat transfer member 35 substantially coincides with the upper surface of the spacer 40.
  • the heat transfer member 35 is compressed at a compression rate of about 5 to 30%, so that the heat resistance is reduced and an efficient heat transfer effect can be exhibited.
  • the compression rate of the heat transfer member 35 is managed by the height H of the spacer 40, appropriate tightening is performed without causing insufficient tightening or excessive tightening.
  • the heat generating circuit component 39 mounted on the lower surface side of the control circuit board 22 is embedded in the heat transfer member 35 by the elasticity of the heat transfer member 35. For this reason, the contact between the heat generating circuit component 39 and the heat transfer member 35 is performed without excess or deficiency, and the contact between the heat transfer member 35 and the control circuit board 22 and the heat transfer plate 32 is favorably performed. And the thermal resistance between the control circuit board 22 and the heat transfer plate 32 can be reduced.
  • An insulating sheet 42 is attached to the lower surface of the heat transfer plate 32 in order to shorten the insulation distance. Then, as shown in FIG. 2, the fixing screw 14 is inserted into the insertion hole 15 of the semiconductor power module 11 and the cooling member 13, and the fixing screw 14 is screwed into the female screw portion 3 e formed in the cooling body 3. The semiconductor power module 11 and the cooling member 13 are fixed to the cooling body 3.
  • the control circuit board 22 is superposed on the heat transfer plate 32 via the heat transfer member 35, and the heat transfer member 35 is compressed at a compression rate of about 5 to 30% by the fixing screw 36. In this state, the control circuit board 22, the heat transfer member 35, and the heat transfer plate 32 are fixed to form the control circuit board unit UC.
  • the semiconductor power module 11 and the cooling member 13 formed on the lower surface of the semiconductor power module 11 are fixed to the upper surface of the cooling body 3 with fixing screws 14.
  • the drive circuit board 21 is mounted on the board fixing part 16 formed on the upper surface of the semiconductor power module 11 before or after fixing to the cooling body 3. Then, the drive circuit board 21 is fixed to the board fixing portion 16 by four joint screws 24 from above.
  • control circuit board 22 of the control circuit board unit UC is placed on the upper surface of the joint screw 24, and the protrusions 32 a and 32 b of the heat transfer plate 32 are placed on the upper ends of the board heat absorption parts 13 b and 13 c of the cooling member 13. To do.
  • the control circuit board unit UC is fixed on the joint screw 24 by the four fixing screws 25, and the heat transfer plate 32 of the control circuit board unit UC is connected to the board heat absorbing portions 13b and 13c by the fixing screws 33.
  • the bus bar 50 is connected to the positive and negative DC input terminals 11 a of the semiconductor power module 11, and the positive and negative connection terminals 4 a of the film capacitor 4 penetrating the cooling body 3 at the other end of the bus bar 50.
  • a fixing screw 51 is connected to the positive and negative DC input terminals 11 a of the semiconductor power module 11
  • a fixing screw 51 Further, a crimp terminal 53 fixed to the tip of a connection cord 52 connected to an external converter (not shown) is fixed to the DC input terminal 11 a of the semiconductor power module 11.
  • a bus bar 55 is connected to the three-phase AC output terminal 11 b of the semiconductor power module 11 with a fixing screw 56, and a current sensor 57 is disposed in the middle of the bus bar 55.
  • a crimp terminal 59 fixed to the tip of a motor cable 58 connected to an external three-phase electric motor (not shown) is connected to the other end of the bus bar 55 with a fixing screw 60.
  • the lower housing 2A and the upper housing 2B are fixed to the lower surface and the upper surface of the cooling body 3 via a sealing material, and the assembly of the power conversion device 1 is completed.
  • DC power is supplied from an external converter (not shown), and the power supply circuit, the control circuit, and the like mounted on the control circuit board 22 are set in an operating state.
  • a signal is supplied to the semiconductor power module 11 through an electrical connection line (not shown) via a drive circuit mounted on the drive circuit board 21.
  • the IGBT built in the semiconductor power module 11 is controlled to convert DC power into AC power.
  • the converted AC power is supplied from the three-phase AC output terminal 11b to the motor cable 58 via the bus bar 55 to drive and control a three-phase electric motor (not shown).
  • the IGBT built in the semiconductor power module 11 generates heat.
  • This generated heat is cooled by the cooling water supplied to the cooling body 3 because the cooling member 13 formed in the semiconductor power module 11 is in direct contact with the cooling body 3.
  • the control circuit and the power supply circuit mounted on the control circuit board 22 include heat generating circuit components 39, and the heat generating circuit components 39 generate heat.
  • the heat generating circuit component 39 is mounted on the lower surface side of the control circuit board 22.
  • a heat transfer plate 32 is provided on the lower surface side of the control circuit board 22 via a heat transfer member 35 having high thermal conductivity, elasticity, and electrical insulation. For this reason, the contact area between the heat generating circuit component 39 and the heat transfer member 35 increases, and the heat resistance between the heat generating circuit component 39 and the heat transfer member 35 decreases as the contact area increases. Therefore, the heat generated by the heat generating circuit component 39 is efficiently transferred to the heat transfer member 35. Since the heat transfer member 35 itself is compressed at a compression rate of about 5 to 30% to increase the thermal conductivity, the heat transferred to the heat transfer member 35 is efficiently transferred as shown in FIG. It is transmitted to the heat transfer plate 32.
  • fever transmitted to the heat-transfer plate 32 is the board
  • the heat generated by the heat generating circuit component 39 mounted on the control circuit board 22 is directly transferred to the heat transfer member 35 without passing through the control circuit board 22 having a large thermal resistance. Efficient heat dissipation.
  • the heat transferred to the heat transfer member 35 is transferred to the heat transfer plate 32 and further transferred to the bottom plate portion 13a via the substrate heat absorbing portions 13b and 13c of the cooling member 13.
  • the substrate heat absorbing portions 13b and 13c are provided along the longitudinal ends of the semiconductor power module 11 as shown in FIG. For this reason, a wide heat transfer area can be taken, and a wide heat dissipation path can be secured.
  • the heat transfer plate 32 is fixed to the substrate heat absorbing portions 13b and 13c of the cooling member 13 by the bent mounting flange portions 32c and 32d, the control circuit substrate 22 can be prevented from rolling. Furthermore, since the control circuit board 22 is supported by the heat transfer plate 32 via the heat transfer member 35, the heat transfer plate 32 can prevent the control circuit board 22 from being bent. In addition, since the bottom plate portion 13a and the substrate heat absorption portions 13b and 13c are integrated in the cooling member 13, there is no joint between the components between the bottom plate portion 13a and the substrate heat absorption portions 13b and 13c. Therefore, an efficient heat conduction path can be formed.
  • the casing 2 is not included in the heat dissipation path from the control circuit board 22 on which the heat generating circuit component 39 is mounted to the cooling body 3, it is necessary to use a metal such as aluminum having high conductivity for the casing 2. Since it can be made of a synthetic resin material, the weight can be reduced. Furthermore, since the heat dissipation path can be formed by the power converter 1 alone without the heat dissipation path depending on the housing 2, the semiconductor power module 11, the drive circuit board 21, and the control circuit board 22 are configured. The power conversion device 1 can be applied to various types of housings 2 and cooling bodies 3.
  • the metal heat transfer plate 32 is fixed to the control circuit board 22, the rigidity of the control circuit board 22 can be increased. For this reason, even when vertical vibrations or rolls are applied to the power conversion device 1 as in the case where the power conversion device 1 is applied as a motor drive circuit that drives a vehicle driving motor, the heat transfer plate 32 provides rigidity. Can be increased. Therefore, it is possible to provide the power conversion device 1 that is less affected by vertical vibrations and rolls.
  • the heat transfer member 35 has the same outer shape as the control circuit board 22 in the control circuit board unit UC has been described.
  • the present invention is not limited to the above configuration, and the heat transfer member 35 may be provided only at a location where the heat generating circuit component 39 exists.
  • the case where the heat generating circuit component 39 is mounted on the heat transfer member 35 on the back surface side of the control circuit board 22 has been described.
  • the present invention is not limited to this, and the heat generating circuit component is not limited thereto.
  • the heat transfer plate 32 may be disposed on the upper surface side via the heat transfer member 35.
  • the case where there is only one type of substrate on which the heat generating circuit component 39 is mounted is the control circuit substrate 22.
  • the present invention is not limited to the above-described configuration.
  • each mounting board is unitized as described above, and a plurality of mounting boards are provided on the cooling member 13.
  • the substrate heat absorbing portion may be formed to form a heat dissipation path for each substrate unit.
  • the substrate heat absorbing portion of the cooling member 13 formed in the semiconductor power module 11 is extended upward through the semiconductor power module 11. That is, in the second embodiment, as shown in FIGS. 7 and 8, the direct current input terminals 11 ap and 11 an and the direct current input terminals 11 ap and 11 an are connected along the positive and negative direct current input terminals 11 ap and 11 an in the case body 12 of the semiconductor power module 11. Through holes 12aa, 12ab and 12ac are formed outside the input terminals 11ap and 11an, respectively.
  • Substrate heat absorbing portions 13da, 13db and 13dc and substrate heat absorbing portions 13ea, 13eb, 13ec and 13ed extending through the through holes 12ba, 12bb, 12bc and 12bd are formed.
  • projecting portions 32 f and 32 g projecting outward are formed at both ends of the heat transfer plate 32 of the control circuit board 22 in the direction orthogonal to the longitudinal direction of the semiconductor power module 11.
  • the mounting flange portions 32ha, 32hb, and 32hc and the mounting flange portion are respectively located at the positions corresponding to the outer surfaces of the substrate heat absorption portions 13da, 13db, and 13dc and the substrate heat absorption portions 13ea, 13eb, 13ec, and 13ed at the tips of the protruding portions 32f and 32g.
  • 32ia, 32ib, 32ic and 32id are formed extending downward.
  • a female screw portion 13f is formed on the upper end side of each of the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed of the cooling member 13, and on the lower end side of each of the mounting flange portions 32ha to 32hc and 32ia to 32id of the heat transfer plate 32.
  • a screw insertion hole 32j is formed. Then, as shown in FIG. 9, the mounting flange portions 32ha to 32hc and the mounting flange portion of the heat transfer plate 32 of the control board unit UC are provided on the outer surfaces of the substrate heat absorption portions 13da to 3dc and the substrate heat absorption portions 13ea to 13ed of the cooling member 13. The inner surfaces of 32ia to 32id are brought into contact with each other.
  • the fixing screws 34 are screwed into the female screw portions 13f of the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed through the screw insertion holes 32j of the mounting flange portions 32ha to 32hc and 32ia to 32id, and tightened, thereby tightening the substrate heat absorption.
  • the portions 13da to 13dc and 13ea to 13ed and the mounting flange portions 32ha to 32hc and 32ia to 32id are fixed.
  • the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed of the cooling member 13 are formed through the through holes 12aa to 12ac formed in the case body 12 from the lower side of the case body 12 of the semiconductor power module 11. 12ba-12bd is inserted and protrudes upward.
  • the protrusions 13e and 13f of the heat transfer plate 32 of the control circuit board unit UC are placed on the upper ends of the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed, and the outer surfaces of the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed are mounted.
  • the mounting flange portions 32ha to 32hc and the inner surfaces of 32ia to 32id are brought into contact with each other and fixed with fixing screws 34. Therefore, as in the first embodiment, the heat generated by the heat generating circuit component 39 mounted on the lower surface side of the control circuit board 22 is transferred to the heat transfer plate 32 via the heat transfer member 35, and this heat transfer is performed.
  • the heat transferred to the plate 32 is absorbed by the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed of the cooling member 13 through the mounting flange portions 32ha to 32hc and 32ia to 32id.
  • the heat absorbed by the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed is radiated from the bottom plate portion 13a to the cooling body 3. Therefore, the heat generated by the heat generating circuit component 39 mounted on the control circuit board 22 can be efficiently radiated to the cooling body 3 through the heat transfer member 35, the heat transfer plate 32, and the cooling member 13. In other words, the heat generating circuit component 39 mounted on the control circuit board 22 through the cooling member 13, the heat transfer plate 32, and the heat transfer member 35 can be efficiently cooled by the cooling body 3.
  • the same effect as that of the first embodiment described above can be obtained.
  • the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed of the cooling member 13 are passed upward through the through holes 12aa to 12ac and 12ba to 12bd formed in the case body 12 of the semiconductor power module 11. It is extended. For this reason, the inside of the semiconductor power module 11 can be cooled by the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed, and the cooling effect of the semiconductor power module 11 can be further improved.
  • the baseplate part 13a of the cooling member 13 contacted the upper surface of the cooling body 3 directly was demonstrated, it is not limited to this and is shown in FIG. It can also be configured as follows. That is, an opening 61 reaching the water supply passage 3 c is formed at a central position on the upper surface of the cooling body 3 facing the lower surfaces of the semiconductor power module 11 and the cooling member 13, and the bottom plate portion 13 a of the cooling member 13 is formed around the opening 61 An O-ring 62 that contacts the lower surface of the substrate is disposed. On the other hand, a plurality of cooling fins 63 that are inserted into the opening 61 of the cooling body 3 are formed on the lower surface of the cooling member 13 that faces the opening 61.
  • the cooling member 13 is placed on the cooling body 3 so that the cooling fins 63 are inserted into the openings 61, and the case body 12 of the semiconductor power module 11 is placed on the cooling member 13.
  • the semiconductor power module 11 and the cooling member 13 are fastened together with the screws 14. At this time, since the lower surface of the bottom plate portion 13a of the cooling member 13 contacts the O-ring 62, it is possible to prevent the cooling water filled in the opening 61 from leaking to the outside.
  • a plurality of cooling fins 63 are formed on the cooling member 13, and these cooling fins 63 are brought into contact with the cooling water through the openings 61 of the cooling body 3. For this reason, the cooling effect of the cooling member 13 can be further improved, the heat generating circuit components mounted on the semiconductor power module 11 and the control circuit board 22 can be radiated more efficiently, and the inside of the upper housing 2B The temperature rise can be reliably prevented.
  • the present invention is not limited to this, and a hybrid vehicle or a railway vehicle that travels on a rail.
  • the present invention can also be applied to any electric drive vehicle.
  • the power conversion device of the present invention can be applied to a case where an actuator such as an electric motor in other industrial equipment is driven as well as an electrically driven vehicle.
  • the cooling member of the semiconductor power module has the substrate heat absorbing portion extending in the vicinity of the mounting substrate on which the circuit components including the heat generating circuit components are mounted.
  • a power converter that can absorb heat at the substrate heat absorption part of the cooling member that cools the heat and dissipate heat to the cooling body, and can reliably dissipate heat generated by the heat generating components of the mounting board without providing a separate heat dissipation path can do.
  • SYMBOLS 1 Power converter device, 2 ... Housing

Abstract

Provided is a power conversion apparatus, which can efficiently dissipate heat to a cooling body without having a housing in a path for dissipating heat of a heat generating circuit component mounted on a substrate. This power conversion apparatus is provided with: a semiconductor power module (11) having a cooling member (13) provided on one surface thereof, said cooling member being bonded to a cooling body; and a mounting substrate (22), which has a circuit component mounted on the other surface side of the semiconductor power module, said circuit component including a heat generating circuit component (39) that drives the semiconductor power module. The cooling member has substrate heat absorbing portions (13b, 13c), which extend to the vicinity of the mounting substrate.

Description

電力変換装置Power converter
　本発明は、電力変換用の半導体スイッチング素子を内蔵した半導体パワーモジュール上に、所定間隔を保って上記半導体スイッチング素子を駆動する発熱回路部品を含む回路部品を実装した実装基板を支持するようにした電力変換装置に関する。 The present invention supports a mounting board on which a circuit component including a heat generating circuit component for driving the semiconductor switching element is mounted at a predetermined interval on a semiconductor power module including a semiconductor switching element for power conversion. The present invention relates to a power conversion device.
　この種の電力変換装置としては、特許文献１に記載された電力変換装置が知られている。この電力変換装置は、筐体内に、水冷ジャケットを配置し、この水冷ジャケット上に電力変換用の半導体スイッチング素子としてのＩＧＢＴを内蔵した半導体パワーモジュールを配置して冷却するようにしている。
　また、筐体内には、半導体パワーモジュールの水冷ジャケットとは反対側に所定距離を保って制御回路基板を配置し、この制御回路基板で発生する熱を、放熱部材を介して制御回路基板を支持する金属ベース板に伝達し、さらに金属ベース板に伝達された熱を、この金属ベース板を支持する筐体の側壁を介して水冷ジャケットに伝達するようにしている。 As this type of power conversion device, a power conversion device described in Patent Document 1 is known. In this power conversion device, a water cooling jacket is disposed in a casing, and a semiconductor power module including an IGBT as a semiconductor switching element for power conversion is disposed on the water cooling jacket to cool the power conversion apparatus.
In addition, a control circuit board is disposed in the housing at a predetermined distance on the opposite side of the semiconductor power module from the water-cooling jacket, and the heat generated by the control circuit board is supported by the heat dissipation member. The heat transmitted to the metal base plate is further transmitted to the water cooling jacket through the side wall of the casing that supports the metal base plate.
特許第４６５７３２９号公報Japanese Patent No. 4657329
　ところで、上記特許文献１に記載された従来例にあっては、制御回路基板で発生する熱を、制御回路基板→放熱部材→金属ベース板→筐体→水冷ジャケットという経路で放熱するようにしている。このため、筐体が伝熱経路の一部として利用されることにより、筐体にも良好な伝熱性が要求されることになり、材料が熱伝導率の高い金属に限定され、小型軽量化の要求される電力変換装置おいて、樹脂等の軽量な材料の選択が不可能となり軽量化が困難となるという未解決の課題がある。 By the way, in the conventional example described in Patent Document 1, the heat generated in the control circuit board is radiated through the path of the control circuit board → the heat radiating member → the metal base plate → the housing → the water cooling jacket. Yes. For this reason, when the housing is used as a part of the heat transfer path, the housing is also required to have good heat transfer properties, and the material is limited to a metal having high thermal conductivity, which is reduced in size and weight. However, there is an unsolved problem that it is difficult to select a lightweight material such as a resin and it is difficult to reduce the weight.
　また、筐体には、防水・防塵が要求されることが多いため、金属ベース板と筐体との間、筐体と水冷ジャケットとの間には液状シール剤の塗布やゴム製パッキンの挟み込みなどが一般的に行われている。液状シール剤やゴム製パッキンは熱伝導率が一般的に低く、これらが熱冷却経路に介在することで熱抵抗が増え冷却効率が低下するという未解決の課題もある。 Also, since the housing is often required to be waterproof and dustproof, apply a liquid sealant or sandwich rubber packing between the metal base plate and the housing and between the housing and the water cooling jacket. Etc. are generally performed. Liquid sealants and rubber packings generally have a low thermal conductivity, and there is an unsolved problem that the thermal resistance increases and the cooling efficiency decreases due to the presence of these in the thermal cooling path.
　この未解決の課題を解決するためには、基板や実装部品の除去しきれない発熱を筐体や筐体蓋からの自然対流による放熱も必要となり、筐体や筐体蓋の表面積を大きくするために、筐体や筐体蓋の外形が大きくなり電力変換装置が大型化することになる。
　そこで、本発明は、上記従来例の未解決の課題に着目してなされたものであり、基板に搭載された発熱回路部品の熱の放熱経路に筐体を介在させることなく、効率よく冷却体に放熱することができる電力変換装置を提供することを目的としている。 In order to solve this unresolved issue, it is necessary to dissipate the heat generated by the substrate and mounted components by natural convection from the case and case cover, increasing the surface area of the case and case cover. For this reason, the outer shape of the housing and the housing lid is increased, and the power converter is increased in size.
Accordingly, the present invention has been made paying attention to the unsolved problems of the above-described conventional example, and efficiently cools the cooling body without interposing a casing in the heat radiation path of the heat generating circuit component mounted on the substrate. It aims at providing the power converter device which can thermally radiate.
　上記目的を達成するために、本発明に係る電力変換装置の第１の形態は、一面に冷却体に接合する冷却部材を備えた半導体パワーモジュールと、前記半導体パワーモジュールの他面側に、前記半導体パワーモジュールを駆動する発熱回路部品を含む回路部品を実装した実装基板とを備えている。そして、前記冷却部材は、前記実装基板近傍に延長する基板吸熱部を有している。
　この構成によると、実装基板の発熱部品での発熱を、半導体パワーモジュールを冷却する冷却部材の基板吸熱部で吸熱して冷却体に放熱することができ、別途放熱経路を設けることなく、実装基板の発熱部品の発熱を確実に放熱することができる。 In order to achieve the above object, a first embodiment of a power conversion device according to the present invention includes a semiconductor power module including a cooling member bonded to a cooling body on one surface, and the other surface side of the semiconductor power module, And a mounting board on which circuit components including a heat generating circuit component for driving the semiconductor power module are mounted. The cooling member has a substrate heat absorbing portion extending in the vicinity of the mounting substrate.
According to this configuration, the heat generated by the heat-generating component of the mounting board can be absorbed by the board heat-absorbing portion of the cooling member that cools the semiconductor power module and radiated to the cooling body, and the mounting board can be provided without providing a separate heat dissipation path. It is possible to reliably dissipate the heat generated by the heat generating parts.
　また、本発明に係る電力変換装置の第２の態様は、前記基板吸熱部が、前記半導体パワーモジュールの一面側から当該半導体パワーモジュールの側面を通って他面側に延長している。
　この構成によると、実装基板の発熱を、伝熱板を介して冷却部材の基板吸熱部に確実に伝熱することができ、放熱効果を向上させることができると共に、実装基板の撓みを防止することができる。 Moreover, the 2nd aspect of the power converter device which concerns on this invention has the said board | substrate heat absorption part extended from the one surface side of the said semiconductor power module to the other surface side through the side surface of the said semiconductor power module.
According to this configuration, the heat generated by the mounting substrate can be reliably transferred to the substrate heat absorbing portion of the cooling member via the heat transfer plate, so that the heat dissipation effect can be improved and the mounting substrate can be prevented from bending. be able to.
　また、本発明に係る電力変換装置の第３の態様は、前記基板吸熱部が、前記半導体パワーモジュールの一面側から当該半導体パワーモジュール内部を通って他面側に延長している。
　この構成によると、実装基板と伝熱板との間に介挿した伝熱部材により、実装基板の発熱部品の発熱を確実に伝熱板に伝熱することができる。 Moreover, the 3rd aspect of the power converter device which concerns on this invention has the said board | substrate heat absorption part extended from the one surface side of the said semiconductor power module to the other surface side through the said semiconductor power module inside.
According to this configuration, the heat transfer member interposed between the mounting board and the heat transfer plate can reliably transfer the heat generated by the heat generating components of the mounting board to the heat transfer plate.
　また、本発明に係る電力変換装置の第４の態様は、電力変換用の半導体スイッチング素子をケース体に内蔵し、当該ケース体の一面に冷却体に接触する冷却部材が形成された半導体パワーモジュールと、前記半導体スイッチング素子を駆動する発熱回路部品を含む回路部品を実装し、前記半導体パワーモジュールの他面との間に所定間隔を保って支持される実装基板とを備えている。そして、前記冷却部材は、前記半導体パワーモジュールの他面側の前記実装基板近傍に延長する基板吸熱部を有している。
　この構成によると、実装基板の発熱部品での発熱を、半導体パワーモジュールを冷却する冷却部材の基板吸熱部で吸熱して冷却体に放熱することができ、別途放熱経路を設けることなく、実装基板の発熱部品の発熱を確実に放熱することができる。 A fourth aspect of the power conversion device according to the present invention is a semiconductor power module in which a semiconductor switching element for power conversion is built in a case body, and a cooling member that contacts the cooling body is formed on one surface of the case body. And a mounting substrate on which circuit components including a heat generating circuit component for driving the semiconductor switching element are mounted and supported at a predetermined distance from the other surface of the semiconductor power module. And the said cooling member has a board | substrate heat absorption part extended to the said mounting board | substrate vicinity of the other surface side of the said semiconductor power module.
According to this configuration, the heat generated by the heat-generating component of the mounting board can be absorbed by the board heat-absorbing portion of the cooling member that cools the semiconductor power module and radiated to the cooling body, and the mounting board can be provided without providing a separate heat dissipation path. It is possible to reliably dissipate the heat generated by the heat generating parts.
　また、本発明に係る電力変換装置の第５の形態は、前記実装基板の発熱を前記冷却部材の基板吸熱部に伝熱する伝熱板を備えている。
　この構成によると、実装基板の発熱を、伝熱板を介して冷却部材の基板吸熱部に確実に伝熱することができ、放熱効果を向上させることができると共に、実装基板の撓みを防止することができる。 Moreover, the 5th form of the power converter device which concerns on this invention is provided with the heat exchanger plate which heat-transfers the heat_generation | fever of the said mounting board to the board | substrate heat absorption part of the said cooling member.
According to this configuration, the heat generated by the mounting substrate can be reliably transferred to the substrate heat absorbing portion of the cooling member via the heat transfer plate, so that the heat dissipation effect can be improved and the mounting substrate can be prevented from bending. be able to.
　また、本発明に係る電力変換装置の第６の態様は、前記実装基板と前記伝熱板との間に伝熱部材が介挿されている。
　この構成によると、実装基板と伝熱板との間に介挿した伝熱部材により、実装基板の発熱部品の発熱を確実に伝熱板に伝熱することができる。 In the sixth aspect of the power conversion device according to the present invention, a heat transfer member is interposed between the mounting substrate and the heat transfer plate.
According to this configuration, the heat transfer member interposed between the mounting board and the heat transfer plate can reliably transfer the heat generated by the heat generating components of the mounting board to the heat transfer plate.
　また、本発明に係る電力変換装置の第７の態様は、前記基板吸熱部が、前記半導体パワーモジュールの一面側から当該半導体パワーモジュールの側面を通って他面側に延長している。
　この構成によると、半導体パワーモジュールの仕様を変更することなく、実装基板に実装された発熱部品の発熱を吸熱して冷却体に放熱することができる。 In the seventh aspect of the power conversion device according to the present invention, the substrate heat absorbing portion extends from one surface side of the semiconductor power module to the other surface side through the side surface of the semiconductor power module.
According to this configuration, it is possible to absorb the heat generated by the heat-generating component mounted on the mounting board and dissipate it to the cooling body without changing the specifications of the semiconductor power module.
　また、本発明に係る電力変換装置の第８の態様は、前記基板吸熱部が、前記半導体パワーモジュールの一面側から当該半導体パワーモジュール内部を通って他面側に延長している。
　この構成によると、基板吸熱部が半導体パワーモジュールの内部を通って他面側に延長しているので、半導体パワーモジュール内部の発熱も吸熱することができる。 According to an eighth aspect of the power conversion device of the present invention, the substrate heat absorbing portion extends from one surface side of the semiconductor power module to the other surface side through the inside of the semiconductor power module.
According to this configuration, since the substrate heat absorbing portion extends to the other surface side through the inside of the semiconductor power module, heat generated in the semiconductor power module can also be absorbed.
　また、本発明に係る電力変換装置の第９の態様は、前記冷却部材が熱伝導率の高い金属材料で構成されている。
　この構成によると、冷却部材をアルミニウム、アルミニウム合金、銅等の熱伝導率の高い金属材料で構成するので、実装基板の発熱部品の発熱を冷却体に効率よく放熱することができる。 In the ninth aspect of the power conversion device according to the present invention, the cooling member is made of a metal material having high thermal conductivity.
According to this configuration, since the cooling member is made of a metal material having high thermal conductivity such as aluminum, aluminum alloy, copper, etc., the heat generated by the heat generating component of the mounting board can be efficiently radiated to the cooling body.
　また、本発明に係る電力変換装置の第１０の態様は、前記伝熱板が、熱伝導率の高い金属材料で構成されている。
　この構成によると、伝熱板をアルミニウム、アルミニウム合金、銅等の熱伝導率の高い金属材料で構成するので、実装基板の発熱部品の発熱を冷却部材の基板吸熱部に伝熱することができる。
　また、本発明に係る電力変換装置の第１１の態様は、前記伝熱部材が、絶縁性を有する絶縁体で構成されている。
　この構成によると、実装基板と伝熱板との間に介挿される伝熱部材が絶縁性を有するので、伝熱板を熱伝導率の高い金属材料で構成した場合でも、電気的絶縁を確保することができる。 Moreover, as for the 10th aspect of the power converter device which concerns on this invention, the said heat exchanger plate is comprised with the metal material with high heat conductivity.
According to this configuration, since the heat transfer plate is made of a metal material having high thermal conductivity such as aluminum, aluminum alloy, copper, etc., heat generated by the heat generating component of the mounting substrate can be transferred to the substrate heat absorbing portion of the cooling member. .
Moreover, the 11th aspect of the power converter device which concerns on this invention is comprised by the insulator in which the said heat-transfer member has insulation.
According to this configuration, since the heat transfer member inserted between the mounting board and the heat transfer plate has an insulating property, even when the heat transfer plate is made of a metal material having high thermal conductivity, electrical insulation is ensured. can do.
　また、本発明に係る電力変換装置の第１２の態様は、前記伝熱部材が、伸縮性を有する弾性体で構成されている。
　この構成によると、伝熱部材が伸縮性を有するので、実装基板に実装されている回路部品との接触面積を広くすることができ、効率の良い伝熱を行うことができる。 Moreover, the 12th aspect of the power converter device which concerns on this invention is comprised by the elastic body in which the said heat-transfer member has a stretching property.
According to this configuration, since the heat transfer member has elasticity, the contact area with the circuit component mounted on the mounting board can be widened, and efficient heat transfer can be performed.
　また、本発明に係る電力変換装置の第１３の態様は、前記伝熱部材は、伸縮性を有する弾性体で構成され、前記実装基板の前記伝熱部材側実装面に前記発熱回路部品が実装されている。
　この構成によると、伝熱部材が伸縮性を有するので、実装基板に実装されている発熱回路部品との接触面積を広くすることができ、より効率の良い伝熱を行うことができる。 In a thirteenth aspect of the power conversion device according to the present invention, the heat transfer member is formed of an elastic body having elasticity, and the heating circuit component is mounted on the heat transfer member side mounting surface of the mounting board. Has been.
According to this configuration, since the heat transfer member has elasticity, the contact area with the heat generating circuit component mounted on the mounting board can be widened, and more efficient heat transfer can be performed.
　本発明によれば、発熱回路部品を含む回路部品を実装した実装基板の発熱を、半導体パワーモジュールを冷却する冷却部材の基板吸熱部で吸熱して冷却体に放熱することができ、冷却部材で半導体パワーモジュール及び実装基板の発熱を冷却体に効率よく放熱することができる。このため、筐体を伝熱経路として使用することがないので、筐体を軽量化することができるとともに、筐体の設計の自由度を向上させることができる。 According to the present invention, the heat generated by the mounting board on which the circuit components including the heat generating circuit components are mounted can be absorbed by the substrate heat absorbing portion of the cooling member that cools the semiconductor power module and can be dissipated to the cooling body. Heat generated from the semiconductor power module and the mounting substrate can be efficiently radiated to the cooling body. For this reason, since a housing | casing is not used as a heat-transfer path | route, while being able to reduce a housing weight, the freedom degree of design of a housing | casing can be improved.
本発明に係る電力変換装置の第１の実施形態の全体構成を示す断面図である。It is sectional drawing which shows the whole structure of 1st Embodiment of the power converter device which concerns on this invention. 第１の実施形態の要部を示す拡大断面図である。It is an expanded sectional view showing the important section of a 1st embodiment. 電力変換装置の斜視図である。It is a perspective view of a power converter. 半導体パワーモジュールと冷却部材との関係を示す斜視図である。It is a perspective view which shows the relationship between a semiconductor power module and a cooling member. 実装基板を伝熱支持板へ取り付けた状態を示す断面図である。It is sectional drawing which shows the state which attached the mounting board | substrate to the heat-transfer support plate. 発熱回路部品の放熱経路を説明する図である。It is a figure explaining the heat dissipation path | route of a heat generating circuit component. 本発明の第２の実施形態を示す電力変換装置の斜視図である。It is a perspective view of the power converter device which shows the 2nd Embodiment of this invention. 第２の実施形態の半導体パワーモジュールと冷却部材との関係を示す斜視図である。It is a perspective view which shows the relationship between the semiconductor power module of 2nd Embodiment, and a cooling member. 図７の平面図である。FIG. 8 is a plan view of FIG. 7. 冷却部材の他の例を示す断面図である。It is sectional drawing which shows the other example of a cooling member.
　以下、本発明の実施の形態を図面について説明する。
　図１は本発明に係る電力変換装置の全体構成を示す断面図である。
　図中、１は電力変換装置であって、この電力変換装置１は筐体２内に収納されている。筐体２は、合成樹脂材を成形したものであり、水冷ジャケットの構成を有する冷却体３を挟んで上下に分割された下部筐体２Ａ及び上部筐体２Ｂで構成されている。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a cross-sectional view showing the overall configuration of a power converter according to the present invention.
In the figure, reference numeral 1 denotes a power converter, and the power converter 1 is housed in a housing 2. The casing 2 is formed by molding a synthetic resin material, and includes a lower casing 2A and an upper casing 2B that are divided vertically with a cooling body 3 having a water-cooling jacket structure interposed therebetween.
　下部筐体２Ａは有底角筒体で構成されている。この下部筐体２Ａは開放上部が冷却体３で覆われ、内部にフィルムコンデンサ４が収納されている。
　上部筐体２Ｂは、上端及び下端を開放した角筒体２ａと、この角筒体２ａの上端を閉塞する蓋体２ｂとを備えている。そして、角筒体２ａの下端が冷却体３で閉塞されている。この角筒体２ａの下端と冷却体３との間には、図示しないが、液状シール剤の塗布やゴム製パッキンの挟み込みなどのシール材が介在されている。 The lower housing 2A is a bottomed rectangular tube. The lower housing 2A is covered with a cooling body 3 at the open top, and a film capacitor 4 is accommodated therein.
The upper housing 2B includes a rectangular tube 2a having an open upper end and a lower end, and a lid 2b that closes the upper end of the rectangular tube 2a. The lower end of the rectangular tube 2a is closed by the cooling body 3. Although not shown, a sealing material such as application of a liquid sealant or sandwiching rubber packing is interposed between the lower end of the rectangular tube 2a and the cooling body 3.
　冷却体３は、冷却媒体としての冷却水の給水口３ａ及び排水口３ｂが筐体２の外方に開口されている。これら給水口３ａ及び排水口３ｂは例えばフレキシブルホースを介して図示しないラジエータ等の冷却水供給源に接続されている。この冷却体３は例えば熱伝導率の高いアルミニウム、アルミニウム合金を射出成形して形成されている。
　そして、冷却体３は、上面及び下面が互いに平行な平坦面とされ、給水口３ａ及び排水口３ｂ間に後述する冷却部材１３の幅に対応する幅広の給水通路３ｃが形成されている。また、冷却体３には、下部筐体２Ａに保持されたフィルムコンデンサ４の絶縁被覆された正負の接続端子４ａを上下に挿通する挿通孔３ｄが形成されている。 In the cooling body 3, a water supply port 3 a and a water discharge port 3 b of cooling water as a cooling medium are opened to the outside of the housing 2. These water supply port 3a and drainage port 3b are connected to a cooling water supply source such as a radiator (not shown) via a flexible hose, for example. The cooling body 3 is formed, for example, by injection molding aluminum or aluminum alloy having high thermal conductivity.
And the cooling body 3 is made into the flat surface where the upper surface and the lower surface are mutually parallel, and the wide water supply channel | path 3c corresponding to the width | variety of the cooling member 13 mentioned later is formed between the water supply port 3a and the drain port 3b. Further, the cooling body 3 is formed with an insertion hole 3d through which the positive and negative connection terminals 4a covered with insulation of the film capacitor 4 held in the lower housing 2A are vertically inserted.
　電力変換装置１は、図２とともに参照して明らかなように、電力変換用の例えばインバータ回路を構成する半導体スイッチング素子として例えば絶縁ゲートバイポーラトランジスタ（ＩＧＢＴ）を内蔵した半導体パワーモジュール１１を備えている。
　この半導体パワーモジュール１１は、扁平な直方体状の絶縁性のケース体１２内にＩＧＢＴを内蔵しており、ケース体１２の下面にアルミニウム、アルミニウム合金、銅等の熱伝導率の高い（例えば１００Ｗ・ｍ－１・Ｋ－１以上）金属材料で形成された冷却部材１３が接触されている。 As is apparent from FIG. 2, the power conversion apparatus 1 includes a semiconductor power module 11 that incorporates, for example, an insulated gate bipolar transistor (IGBT) as a semiconductor switching element that constitutes, for example, an inverter circuit for power conversion. .
This semiconductor power module 11 has an IGBT built in a flat rectangular parallelepiped insulative case body 12, and the lower surface of the case body 12 has high thermal conductivity such as aluminum, aluminum alloy, copper (for example, 100 W · m −1 · K −1 or more) The cooling member 13 made of a metal material is in contact.
　この冷却部材１３は、図２～図４に示すように、半導体パワーモジュール１１のケース体１２の下面に接触してケース体１２の長手方向に延長して両端部より僅かに長い底板部１３ａと、この底板部１３ａの長手方向両端から折曲られてケース体１２の長手方向の両側面側を通って上方に延長する基板吸熱部１３ｂ，１３ｃとで断面コ字状に形成されている。基板吸熱部１３ｂ，１３ｃの上端側には雌ねじ部１３ｄが形成されている。 As shown in FIGS. 2 to 4, the cooling member 13 is in contact with the lower surface of the case body 12 of the semiconductor power module 11 and extends in the longitudinal direction of the case body 12 so as to be slightly longer than both ends. The bottom plate portion 13a is formed in a U-shaped cross section with substrate heat absorbing portions 13b and 13c that are bent from both ends in the longitudinal direction and extend upward through both side surfaces in the longitudinal direction of the case body 12. A female screw portion 13d is formed on the upper end side of the substrate heat absorbing portions 13b and 13c.
　また、ケース体１２及び冷却部材１３には平面からみて四隅に固定部材としての固定ねじ１４を挿通する挿通孔１５が形成されている。また、ケース体１２の上面には、挿通孔１５の内側における４箇所に所定高さの基板固定部１６が突出形成されている。
　この基板固定部１６の上端には、半導体パワーモジュール１１に内蔵されたＩＧＢＴを駆動する駆動回路等が実装された駆動回路基板２１が固定されている。また、駆動回路基板２１の上方に所定間隔を保って半導体パワーモジュール１１に内蔵されたＩＧＢＴを制御する相対的に発熱量の大きい、又は発熱密度の大きい発熱回路部品を含む制御回路、電源回路等を実装した実装基板としての制御回路基板２２が固定されている。 Further, the case body 12 and the cooling member 13 are formed with insertion holes 15 through which fixing screws 14 as fixing members are inserted at the four corners as viewed from above. In addition, on the upper surface of the case body 12, substrate fixing portions 16 having a predetermined height are formed to protrude at four locations inside the insertion hole 15.
A drive circuit board 21 on which a drive circuit for driving an IGBT built in the semiconductor power module 11 is mounted is fixed to the upper end of the board fixing portion 16. In addition, a control circuit, a power supply circuit, and the like including a heat generation circuit component having a relatively large heat generation amount or a high heat generation density for controlling the IGBT built in the semiconductor power module 11 with a predetermined interval above the drive circuit board 21. A control circuit board 22 as a mounting board on which is mounted is fixed.
　そして、駆動回路基板２１は、図２に示すように、基板固定部１６に対向する位置に形成した挿通孔２１ａ内に継ぎねじ２４の雄ねじ部２４ａを挿通し、この雄ねじ部２４ａを基板固定部１６の上面に形成した雌ねじ部１６ａに螺合することにより固定されている。
　また、制御回路基板２２は、図２に示すように、継ぎねじ２４の上端に形成した雌ねじ部２４ｂに対向する位置に形成した挿通孔２２ａ内に固定ねじ２５を挿通し、この固定ねじ２５を継ぎねじ２４の雌ねじ部２４ｂに螺合することにより固定されている。 Then, as shown in FIG. 2, the drive circuit board 21 inserts the male screw part 24a of the joint screw 24 into the insertion hole 21a formed at a position facing the board fixing part 16, and the male screw part 24a is inserted into the board fixing part. It is fixed by screwing into a female screw portion 16a formed on the upper surface of 16.
Further, as shown in FIG. 2, the control circuit board 22 inserts a fixing screw 25 into an insertion hole 22 a formed at a position facing the female screw portion 24 b formed at the upper end of the joint screw 24. The joint screw 24 is fixed by being screwed to the female thread portion 24b.
　また、制御回路基板２２は、伝熱板３２によって冷却体３への放熱経路を形成するように支持されている。この伝熱板３２は、例えばアルミニウム又はアルミニウム合金、銅等の熱伝導率が高い（例えば１００Ｗ・ｍ－１・Ｋ－１以上）金属で形成されている。
　また、伝熱板３２は、図２に示すように、半導体パワーモジュール１１のケース体１２の長手方向の両端側で制御回路基板２２及び伝熱部材３５より突出された突出部３２ａ，３２ｂを有し、これら突出部３２ａ，３２ｂの両端から下方に延長する取付フランジ部３２ｃ，３２ｄが形成されている。ここで、取付フランジ部３２ｃ，３２ｄのそれぞれは、前述した冷却部材１３の基板吸熱部１３ｂ，１３ｃの先端部外側から接触するように形成されている。 The control circuit board 22 is supported by the heat transfer plate 32 so as to form a heat radiation path to the cooling body 3. The heat transfer plate 32 is made of a metal having a high thermal conductivity (for example, 100 W · m −1 · K −1 or more) such as aluminum, an aluminum alloy, or copper.
Further, as shown in FIG. 2, the heat transfer plate 32 has protrusions 32 a and 32 b protruding from the control circuit board 22 and the heat transfer member 35 on both ends in the longitudinal direction of the case body 12 of the semiconductor power module 11. Mounting flange portions 32c and 32d extending downward from both ends of the protruding portions 32a and 32b are formed. Here, each of the attachment flange portions 32c and 32d is formed so as to come into contact with the outside of the tip end portions of the substrate heat absorption portions 13b and 13c of the cooling member 13 described above.
　そして、取付フランジ部３２ｃ，３２ｄは、これらに形成された挿通孔３２ｅを通じて固定ねじ３３を基板吸熱部１３ｂ，１３ｃの雌ねじ部１３ｄに螺合させて締付けることにより、基板吸熱部１３ｂ，１３ｃに接触状態で固定されている。
　伝熱板３２には、伝熱部材３５を介して制御回路基板２２が固定ねじ３６によって固定される。伝熱部材３５は、伸縮性を有する弾性体で制御回路基板２２と同じ外形寸法に構成されている。この伝熱部材３５としては、シリコンゴムの内部に金属フィラーを介在させることにより伝熱性を高めたものが適用されている。 The mounting flange portions 32c and 32d are brought into contact with the substrate heat absorbing portions 13b and 13c by screwing the fixing screws 33 into the female screw portions 13d of the substrate heat absorbing portions 13b and 13c through the insertion holes 32e formed therein. It is fixed in the state.
The control circuit board 22 is fixed to the heat transfer plate 32 by a fixing screw 36 via a heat transfer member 35. The heat transfer member 35 is an elastic body having elasticity, and has the same outer dimensions as the control circuit board 22. As the heat transfer member 35, a member having improved heat transfer property by interposing a metal filler inside silicon rubber is applied.
　さらに、制御回路基板２２には、発熱回路部品３９が、図５に示すように、下面側に実装されている。
　そして、制御回路基板２２と、伝熱部材３５及び伝熱板３２との連結が図２に示すように行われる。
　この制御回路基板２２と伝熱板３２との連結には、図５に示すように、伝熱部材３５の厚みＴより低い伝熱板管理高さＨを有する間隔調整部材としての間座４０が用いられる。この間座４０は、伝熱板３２に形成された固定ねじ３６が螺合する雌ねじ部４１の外周側に接着等によって仮止めされている。ここで、間座４０の伝熱板管理高さＨは、伝熱部材３５の圧縮率が約５～３０％となるように設定されている。このように、伝熱部材３５を約５～３０％程度に圧縮することにより、熱抵抗が減り効率良い伝熱効果を発揮することができる。 Further, on the control circuit board 22, a heat generating circuit component 39 is mounted on the lower surface side as shown in FIG.
Then, the control circuit board 22 is connected to the heat transfer member 35 and the heat transfer plate 32 as shown in FIG.
As shown in FIG. 5, the connection between the control circuit board 22 and the heat transfer plate 32 includes a spacer 40 as a gap adjustment member having a heat transfer plate management height H lower than the thickness T of the heat transfer member 35. Used. The spacer 40 is temporarily fixed by bonding or the like to the outer peripheral side of the female screw portion 41 to which the fixing screw 36 formed on the heat transfer plate 32 is screwed. Here, the heat transfer plate management height H of the spacer 40 is set so that the compression rate of the heat transfer member 35 is about 5 to 30%. Thus, by compressing the heat transfer member 35 to about 5 to 30%, the heat resistance can be reduced and an efficient heat transfer effect can be exhibited.
　一方、伝熱部材３５には、継ぎねじ２４を挿通可能な挿通孔３５ａと、間座４０を挿通可能な挿通孔３５ｂとが形成されている。そして、伝熱板３２に仮止めされた間座４０を挿通孔３５ｂに挿通されるように伝熱部材３５を伝熱板３２に載置し、この伝熱板３２の上に制御回路基板２２を発熱回路部品３９が伝熱部材３５に接するように載置する。
　この状態で、固定ねじ３６を制御回路基板２２の挿通孔２２ｂを通じ、間座４０の中心開口を通じて伝熱板３２の雌ねじ部４１に螺合させる。そして、固定ねじ３６を伝熱部材３５の上面が間座４０の上面と略一致するまで締め付ける。 On the other hand, the heat transfer member 35 is formed with an insertion hole 35a through which the joint screw 24 can be inserted and an insertion hole 35b through which the spacer 40 can be inserted. Then, the heat transfer member 35 is placed on the heat transfer plate 32 so that the spacer 40 temporarily fixed to the heat transfer plate 32 is inserted into the insertion hole 35 b, and the control circuit board 22 is placed on the heat transfer plate 32. Is placed so that the heat generating circuit component 39 is in contact with the heat transfer member 35.
In this state, the fixing screw 36 is screwed into the female screw portion 41 of the heat transfer plate 32 through the insertion hole 22b of the control circuit board 22 and the central opening of the spacer 40. Then, the fixing screw 36 is tightened until the upper surface of the heat transfer member 35 substantially coincides with the upper surface of the spacer 40.
　このため、伝熱部材３５が５～３０％程度の圧縮率で圧縮されることになり、熱抵抗が減って効率の良い伝熱効果を発揮することができる。このとき、伝熱部材３５の圧縮率は間座４０の高さＨによって管理されるので、締め付け不足や締め付け過剰が生じることなく、適切な締め付けが行われる。
　また、制御回路基板２２の下面側に実装された発熱回路部品３９が伝熱部材３５の弾性によって伝熱部材３５内に埋め込まれる。このため、発熱回路部品３９と伝熱部材３５との接触が過不足なく行われるとともに、伝熱部材３５と制御回路基板２２及び伝熱板３２との接触が良好に行われ、伝熱部材３５と制御回路基板２２及び伝熱板３２との間の熱抵抗を減少させることができる。 For this reason, the heat transfer member 35 is compressed at a compression rate of about 5 to 30%, so that the heat resistance is reduced and an efficient heat transfer effect can be exhibited. At this time, since the compression rate of the heat transfer member 35 is managed by the height H of the spacer 40, appropriate tightening is performed without causing insufficient tightening or excessive tightening.
Further, the heat generating circuit component 39 mounted on the lower surface side of the control circuit board 22 is embedded in the heat transfer member 35 by the elasticity of the heat transfer member 35. For this reason, the contact between the heat generating circuit component 39 and the heat transfer member 35 is performed without excess or deficiency, and the contact between the heat transfer member 35 and the control circuit board 22 and the heat transfer plate 32 is favorably performed. And the thermal resistance between the control circuit board 22 and the heat transfer plate 32 can be reduced.
　なお、伝熱板３２の下面には、絶縁距離を短くするために絶縁シート４２が貼着されている。
　そして、図２に示すように、半導体パワーモジュール１１及び冷却部材１３の挿通孔１５に固定ねじ１４を挿通し、この固定ねじ１４を冷却体３に形成された雌ねじ部３ｅに螺合させることにより、半導体パワーモジュール１１と冷却部材１３とが冷却体３に固定されている。 An insulating sheet 42 is attached to the lower surface of the heat transfer plate 32 in order to shorten the insulation distance.
Then, as shown in FIG. 2, the fixing screw 14 is inserted into the insertion hole 15 of the semiconductor power module 11 and the cooling member 13, and the fixing screw 14 is screwed into the female screw portion 3 e formed in the cooling body 3. The semiconductor power module 11 and the cooling member 13 are fixed to the cooling body 3.
　次に、上記第１の実施形態の電力変換装置１の組立方法を説明する。
　先ず、図２で前述したように、制御回路基板２２を伝熱板３２に伝熱部材３５を介して重ね合わせ、固定ねじ３６によって伝熱部材３５を５～３０％程度の圧縮率で圧縮した状態で制御回路基板２２、伝熱部材３５及び伝熱板３２を固定して、制御回路基板ユニットＵＣを形成しておく。 Next, a method for assembling the power conversion device 1 according to the first embodiment will be described.
First, as described above with reference to FIG. 2, the control circuit board 22 is superposed on the heat transfer plate 32 via the heat transfer member 35, and the heat transfer member 35 is compressed at a compression rate of about 5 to 30% by the fixing screw 36. In this state, the control circuit board 22, the heat transfer member 35, and the heat transfer plate 32 are fixed to form the control circuit board unit UC.
　一方、冷却体３の上面に、固定ねじ１４で半導体パワーモジュール１１とこの半導体パワーモジュール１１の下面に形成した冷却部材１３とを固定する。
　また、半導体パワーモジュール１１には、冷却体３に固定する前又は固定した後に、その上面に形成された基板固定部１６に駆動回路基板２１を載置する。そして、この駆動回路基板２１をその上方から４本の継ぎねじ２４によって基板固定部１６に固定する。 On the other hand, the semiconductor power module 11 and the cooling member 13 formed on the lower surface of the semiconductor power module 11 are fixed to the upper surface of the cooling body 3 with fixing screws 14.
In the semiconductor power module 11, the drive circuit board 21 is mounted on the board fixing part 16 formed on the upper surface of the semiconductor power module 11 before or after fixing to the cooling body 3. Then, the drive circuit board 21 is fixed to the board fixing portion 16 by four joint screws 24 from above.
　そして、継ぎねじ２４の上面に制御回路基板ユニットＵＣの制御回路基板２２を載置すると共に、伝熱板３２の突出部３２ａ，３２ｂを冷却部材１３の基板吸熱部１３ｂ，１３ｃの上端に載置する。この状態で、制御回路基板ユニットＵＣを４本の固定ねじ２５によって継ぎねじ２４上に固定し、制御回路基板ユニットＵＣの伝熱板３２を基板吸熱部１３ｂ及び１３ｃに固定ねじ３３で連結する。 Then, the control circuit board 22 of the control circuit board unit UC is placed on the upper surface of the joint screw 24, and the protrusions 32 a and 32 b of the heat transfer plate 32 are placed on the upper ends of the board heat absorption parts 13 b and 13 c of the cooling member 13. To do. In this state, the control circuit board unit UC is fixed on the joint screw 24 by the four fixing screws 25, and the heat transfer plate 32 of the control circuit board unit UC is connected to the board heat absorbing portions 13b and 13c by the fixing screws 33.
　その後、図１に示すように、半導体パワーモジュール１１の正負の直流入力端子１１ａに、ブスバー５０を接続し、このブスバー５０の他端に冷却体３を貫通するフィルムコンデンサ４の正負の接続端子４ａを固定ねじ５１で連結する。さらに、半導体パワーモジュール１１の直流入力端子１１ａに外部のコンバータ（図示せず）に接続する接続コード５２の先端に固定された圧着端子５３を固定する。 Thereafter, as shown in FIG. 1, the bus bar 50 is connected to the positive and negative DC input terminals 11 a of the semiconductor power module 11, and the positive and negative connection terminals 4 a of the film capacitor 4 penetrating the cooling body 3 at the other end of the bus bar 50. Are connected by a fixing screw 51. Further, a crimp terminal 53 fixed to the tip of a connection cord 52 connected to an external converter (not shown) is fixed to the DC input terminal 11 a of the semiconductor power module 11.
　さらに、半導体パワーモジュール１１の３相交流出力端子１１ｂにブスバー５５を固定ねじ５６で接続し、このブスバー５５の途中に電流センサ５７を配置する。そして、ブスバー５５の他端に外部の３相電動モータ（図示せず）に接続したモータケーブル５８の先端に固定した圧着端子５９を固定ねじ６０で固定して接続する。
　その後、冷却体３の下面及び上面に、下部筐体２Ａ及び上部筐体２Ｂを、シール材を介して固定して電力変換装置１の組立を完了する。 Further, a bus bar 55 is connected to the three-phase AC output terminal 11 b of the semiconductor power module 11 with a fixing screw 56, and a current sensor 57 is disposed in the middle of the bus bar 55. Then, a crimp terminal 59 fixed to the tip of a motor cable 58 connected to an external three-phase electric motor (not shown) is connected to the other end of the bus bar 55 with a fixing screw 60.
Thereafter, the lower housing 2A and the upper housing 2B are fixed to the lower surface and the upper surface of the cooling body 3 via a sealing material, and the assembly of the power conversion device 1 is completed.
　この状態で、外部のコンバータ（図示せず）から直流電力を供給するとともに、制御回路基板２２に実装された電源回路、制御回路等を動作状態とし、制御回路から例えばパルス幅変調信号でなるゲート信号を駆動回路基板２１に実装された駆動回路を介して半導体パワーモジュール１１に図示しない電気的接続線を介して供給する。これによって、半導体パワーモジュール１１に内蔵されたＩＧＢＴが制御されて、直流電力を交流電力に変換する。変換した交流電力は３相交流出力端子１１ｂからブスバー５５を介してモータケーブル５８に供給し、３相電動モータ（図示せず）を駆動制御する。 In this state, DC power is supplied from an external converter (not shown), and the power supply circuit, the control circuit, and the like mounted on the control circuit board 22 are set in an operating state. A signal is supplied to the semiconductor power module 11 through an electrical connection line (not shown) via a drive circuit mounted on the drive circuit board 21. As a result, the IGBT built in the semiconductor power module 11 is controlled to convert DC power into AC power. The converted AC power is supplied from the three-phase AC output terminal 11b to the motor cable 58 via the bus bar 55 to drive and control a three-phase electric motor (not shown).
　このとき、半導体パワーモジュール１１に内蔵されたＩＧＢＴで発熱する。この発熱は半導体パワーモジュール１１に形成された冷却部材１３が冷却体３に直接接触されているので、冷却体３に供給されている冷却水によって冷却される。
　一方、制御回路基板２２に実装されている制御回路及び電源回路には発熱回路部品３９が含まれており、これら発熱回路部品３９で発熱を生じる。このとき、発熱回路部品３９は制御回路基板２２の下面側に実装されている。 At this time, the IGBT built in the semiconductor power module 11 generates heat. This generated heat is cooled by the cooling water supplied to the cooling body 3 because the cooling member 13 formed in the semiconductor power module 11 is in direct contact with the cooling body 3.
On the other hand, the control circuit and the power supply circuit mounted on the control circuit board 22 include heat generating circuit components 39, and the heat generating circuit components 39 generate heat. At this time, the heat generating circuit component 39 is mounted on the lower surface side of the control circuit board 22.
　そして、これら制御回路基板２２の下面側には熱伝導率が高く弾性を有し、且つ電気的絶縁性を有する伝熱部材３５を介して伝熱板３２が設けられている。
　このため、発熱回路部品３９と伝熱部材３５との接触面積が大きくなるとともに密着して発熱回路部品３９と伝熱部材３５との熱抵抗が小さくなる。したがって、発熱回路部品３９の発熱が伝熱部材３５に効率よく伝熱される。そして、伝熱部材３５自体は５～３０％程度の圧縮率で圧縮されて熱伝導率が高められているので、図６に示すように、伝熱部材３５に伝熱された熱が効率良く伝熱板３２に伝達される。 A heat transfer plate 32 is provided on the lower surface side of the control circuit board 22 via a heat transfer member 35 having high thermal conductivity, elasticity, and electrical insulation.
For this reason, the contact area between the heat generating circuit component 39 and the heat transfer member 35 increases, and the heat resistance between the heat generating circuit component 39 and the heat transfer member 35 decreases as the contact area increases. Therefore, the heat generated by the heat generating circuit component 39 is efficiently transferred to the heat transfer member 35. Since the heat transfer member 35 itself is compressed at a compression rate of about 5 to 30% to increase the thermal conductivity, the heat transferred to the heat transfer member 35 is efficiently transferred as shown in FIG. It is transmitted to the heat transfer plate 32.
　そして、伝熱板３２には、半導体パワーモジュール１１に形成された冷却部材１３の基板吸熱部１３ｂ及び１３ｃが連結されているので、伝熱板３２に伝達された熱は、基板吸熱部１３ｂ及び１３ｃを通って底板部１３ａに伝達される。この底板部１３ａは、冷却体３の上面に直接接触されているので、伝達された熱は冷却体３に放熱される。
　このように、上記第１の実施形態によると、制御回路基板２２に実装された発熱回路部品３９の発熱が熱抵抗の大きな制御回路基板２２を介することなく直接伝熱部材３５に伝熱されるので、効率の良い放熱を行うことができる。 And since the board | substrate heat absorption parts 13b and 13c of the cooling member 13 formed in the semiconductor power module 11 are connected to the heat-transfer plate 32, the heat | fever transmitted to the heat-transfer plate 32 is the board | substrate heat absorption part 13b and It is transmitted to the bottom plate part 13a through 13c. Since the bottom plate portion 13 a is in direct contact with the upper surface of the cooling body 3, the transmitted heat is radiated to the cooling body 3.
Thus, according to the first embodiment, the heat generated by the heat generating circuit component 39 mounted on the control circuit board 22 is directly transferred to the heat transfer member 35 without passing through the control circuit board 22 having a large thermal resistance. Efficient heat dissipation.
　そして、伝熱部材３５に伝達された熱は伝熱板３２に伝熱され、さらに冷却部材１３の基板吸熱部１３ｂ，１３ｃを介して底板部１３ａに伝達される。このとき、基板吸熱部１３ｂ，１３ｃが図３に示すように半導体パワーモジュール１１の長手方向の端部に沿って設けられている。このため、伝熱面積を広くとることができ、広い放熱経路を確保することができる。 The heat transferred to the heat transfer member 35 is transferred to the heat transfer plate 32 and further transferred to the bottom plate portion 13a via the substrate heat absorbing portions 13b and 13c of the cooling member 13. At this time, the substrate heat absorbing portions 13b and 13c are provided along the longitudinal ends of the semiconductor power module 11 as shown in FIG. For this reason, a wide heat transfer area can be taken, and a wide heat dissipation path can be secured.
　また、伝熱板３２が折曲げられた取付フランジ部３２ｃ，３２ｄで冷却部材１３の基板吸熱部１３ｂ，１３ｃに固定されているので、制御回路基板２２の横揺れを防止することができる。さらに、制御回路基板２２を伝熱部材３５を介して伝熱板３２で支持しているので、伝熱板３２によって制御回路基板２２の撓みを防止することができる。
　また、冷却部材１３は、底板部１３ａと基板吸熱部１３ｂ及び１３ｃとが一体化されているので、底板部１３ａと基板吸熱部１３ｂ及び１３ｃとの間に部品同士の継ぎ目がなく、熱抵抗を抑制することができ、効率のよい熱伝導路を形成することができる。 Further, since the heat transfer plate 32 is fixed to the substrate heat absorbing portions 13b and 13c of the cooling member 13 by the bent mounting flange portions 32c and 32d, the control circuit substrate 22 can be prevented from rolling. Furthermore, since the control circuit board 22 is supported by the heat transfer plate 32 via the heat transfer member 35, the heat transfer plate 32 can prevent the control circuit board 22 from being bent.
In addition, since the bottom plate portion 13a and the substrate heat absorption portions 13b and 13c are integrated in the cooling member 13, there is no joint between the components between the bottom plate portion 13a and the substrate heat absorption portions 13b and 13c. Therefore, an efficient heat conduction path can be formed.
　さらに、発熱回路部品３９が実装された制御回路基板２２から冷却体３までの放熱経路に筐体２が含まれていないので、筐体２を高伝導率のアルミニウム等の金属を使用する必要がなく、合成樹脂材で構成することができるので、軽量化を図ることができる。
　さらに、放熱経路が筐体２に依存することなく、電力変換装置１単独で放熱経路を形成することができるので、半導体パワーモジュール１１と、駆動回路基板２１及び制御回路基板２２とで構成される電力変換装置１を種々の異なる形態の筐体２や冷却体３に適用することができる。 Further, since the casing 2 is not included in the heat dissipation path from the control circuit board 22 on which the heat generating circuit component 39 is mounted to the cooling body 3, it is necessary to use a metal such as aluminum having high conductivity for the casing 2. Since it can be made of a synthetic resin material, the weight can be reduced.
Furthermore, since the heat dissipation path can be formed by the power converter 1 alone without the heat dissipation path depending on the housing 2, the semiconductor power module 11, the drive circuit board 21, and the control circuit board 22 are configured. The power conversion device 1 can be applied to various types of housings 2 and cooling bodies 3.
　また、制御回路基板２２に金属製の伝熱板３２が固定されているので、制御回路基板２２の剛性を高めることができる。このため、電力変換装置１を車両の走行用モータを駆動するモータ駆動回路として適用する場合のように、電力変換装置１に上下振動や横揺れが作用する場合でも、伝熱板３２で剛性を高めることができる。したがって、上下振動や横揺れ等の影響が少ない電力変換装置１を提供することができる。 Further, since the metal heat transfer plate 32 is fixed to the control circuit board 22, the rigidity of the control circuit board 22 can be increased. For this reason, even when vertical vibrations or rolls are applied to the power conversion device 1 as in the case where the power conversion device 1 is applied as a motor drive circuit that drives a vehicle driving motor, the heat transfer plate 32 provides rigidity. Can be increased. Therefore, it is possible to provide the power conversion device 1 that is less affected by vertical vibrations and rolls.
　なお、上記第１の実施形態においては、制御回路基板ユニットＵＣで、伝熱部材３５を制御回路基板２２と同じ外形とした場合について説明した。しかしながら、本発明は上記構成に限定されるものではなく、伝熱部材３５を発熱回路部品３９が存在する箇所にのみ設けるようにしてもよい。
　また、上記第１の実施形態においては、制御回路基板２２で発熱回路部品３９を裏面側の伝熱部材３５側に実装する場合について説明したが、これに限定されるものではなく、発熱回路部品３９を制御回路基板２２の上面側に実装する場合には、その上面側に伝熱部材３５を介して伝熱板３２を配置するようにすればよい。 In the first embodiment, the case where the heat transfer member 35 has the same outer shape as the control circuit board 22 in the control circuit board unit UC has been described. However, the present invention is not limited to the above configuration, and the heat transfer member 35 may be provided only at a location where the heat generating circuit component 39 exists.
In the first embodiment, the case where the heat generating circuit component 39 is mounted on the heat transfer member 35 on the back surface side of the control circuit board 22 has been described. However, the present invention is not limited to this, and the heat generating circuit component is not limited thereto. When 39 is mounted on the upper surface side of the control circuit board 22, the heat transfer plate 32 may be disposed on the upper surface side via the heat transfer member 35.
　また、上記第１の実施形態においては、発熱回路部品３９を実装した基板が制御回路基板２２のみの１種類存在する場合について説明した。しかしながら、本発明は上記構成に限定されるものではなく、発熱回路部品３９を実装した実装基板が例えば複数枚ある場合には、各実装基板を前述したと同様にユニット化し、冷却部材１３に複数の基板吸熱部を形成して、各基板ユニットに対して放熱経路を形成するようにすればよい。 In the first embodiment, the case where there is only one type of substrate on which the heat generating circuit component 39 is mounted is the control circuit substrate 22. However, the present invention is not limited to the above-described configuration. For example, when there are a plurality of mounting boards on which the heat generating circuit components 39 are mounted, each mounting board is unitized as described above, and a plurality of mounting boards are provided on the cooling member 13. The substrate heat absorbing portion may be formed to form a heat dissipation path for each substrate unit.
　次に、本発明の第２の実施形態を図７～図９について説明する。
　この第２の実施形態は、半導体パワーモジュール１１に形成されている冷却部材１３の基板吸熱部を、半導体パワーモジュール１１内を通って上方に延長させるようにしたものである。
　すなわち、第２の実施形態においては、図７及び図８に示すように、半導体パワーモジュール１１のケース体１２における正負の直流入力端子１１ａｐ及び１１ａｎに沿って、直流入力端子１１ａｐ及び１１ａｎ間と直流入力端子１１ａｐ及び１１ａｎの外側とにそれぞれ貫通孔１２ａａ，１２ａｂ及び１２ａｃが形成されている。 Next, a second embodiment of the present invention will be described with reference to FIGS.
In the second embodiment, the substrate heat absorbing portion of the cooling member 13 formed in the semiconductor power module 11 is extended upward through the semiconductor power module 11.
That is, in the second embodiment, as shown in FIGS. 7 and 8, the direct current input terminals 11 ap and 11 an and the direct current input terminals 11 ap and 11 an are connected along the positive and negative direct current input terminals 11 ap and 11 an in the case body 12 of the semiconductor power module 11. Through holes 12aa, 12ab and 12ac are formed outside the input terminals 11ap and 11an, respectively.
　同様に、ケース体１２における３相交流出力端子１１ｂｕ，１１ｂｖ及び１１ｂｗに沿って、交流出力端子１１ｂｕ及び１１ｂｖ間と、交流出力端子１１ｂｖ及び１１ｂｗ間と、交流出力端子１１ｂｕ及び１１ｂｗの外側とにそれぞれ貫通孔１２ｂａ、１２ｂｂ、１２ｂｃ及び１２ｂｄが形成されている。
　そして、冷却部材１３には、図８に示すように、底板部１３ａの半導体パワーモジュール１１の長手方向と直交する方向の両端部にそれぞれ、貫通孔１２ａａ、１２ａｂ及び１２ａｃに挿通されて上方に延長する基板吸熱部１３ｄａ、１３ｄｂ及び１３ｄｃと、貫通孔１２ｂａ、１２ｂｂ、１２ｂｃ及び１２ｂｄに挿通されて上方に延長する基板吸熱部１３ｅａ、１３ｅｂ、１３ｅｃ及び１３ｅｄが形成されている。 Similarly, along the three-phase AC output terminals 11bu, 11bv and 11bw in the case body 12, between the AC output terminals 11bu and 11bw, between the AC output terminals 11bv and 11bw, and outside the AC output terminals 11bu and 11bw, respectively. Through holes 12ba, 12bb, 12bc, and 12bd are formed.
As shown in FIG. 8, the cooling member 13 is inserted into the through holes 12aa, 12ab and 12ac at both ends of the bottom plate portion 13a in the direction perpendicular to the longitudinal direction of the semiconductor power module 11, and extends upward. Substrate heat absorbing portions 13da, 13db and 13dc and substrate heat absorbing portions 13ea, 13eb, 13ec and 13ed extending through the through holes 12ba, 12bb, 12bc and 12bd are formed.
　これに対応して、制御回路基板２２の伝熱板３２の半導体パワーモジュール１１の長手方向と直交する方向の両端部に外方に突出する突出部３２ｆ及び３２ｇが形成されている。そして、突出部３２ｆ及び３２ｇの先端における基板吸熱部１３ｄａ、１３ｄｂ及び１３ｄｃと基板吸熱部１３ｅａ、１３ｅｂ、１３ｅｃ及び１３ｅｄとの外面に対応する位置にそれぞれ取付フランジ部３２ｈａ、３２ｈｂ及び３２ｈｃと取付フランジ部３２ｉａ、３２ｉｂ、３２ｉｃ及び３２ｉｄが下方に延長して形成されている。 Correspondingly, projecting portions 32 f and 32 g projecting outward are formed at both ends of the heat transfer plate 32 of the control circuit board 22 in the direction orthogonal to the longitudinal direction of the semiconductor power module 11. The mounting flange portions 32ha, 32hb, and 32hc and the mounting flange portion are respectively located at the positions corresponding to the outer surfaces of the substrate heat absorption portions 13da, 13db, and 13dc and the substrate heat absorption portions 13ea, 13eb, 13ec, and 13ed at the tips of the protruding portions 32f and 32g. 32ia, 32ib, 32ic and 32id are formed extending downward.
　また、冷却部材１３の各基板吸熱部１３ｄａ～１３ｄｃ及び１３ｅａ～１３ｅｄの上端側には雌ねじ部１３ｆが形成され、伝熱板３２の各取付フランジ部３２ｈａ～３２ｈｃ及び３２ｉａ～３２ｉｄの下端側にはねじ挿通孔３２ｊが形成されている。
　そして、図９に示すように、冷却部材１３の基板吸熱部１３ｄａ～３ｄｃと基板吸熱部１３ｅａ～１３ｅｄとの外面に制御基板ユニットＵＣの伝熱板３２における取付フランジ部３２ｈａ～３２ｈｃと取付フランジ部３２ｉａ～３２ｉｄの内面を接触させた状態とする。 A female screw portion 13f is formed on the upper end side of each of the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed of the cooling member 13, and on the lower end side of each of the mounting flange portions 32ha to 32hc and 32ia to 32id of the heat transfer plate 32. A screw insertion hole 32j is formed.
Then, as shown in FIG. 9, the mounting flange portions 32ha to 32hc and the mounting flange portion of the heat transfer plate 32 of the control board unit UC are provided on the outer surfaces of the substrate heat absorption portions 13da to 3dc and the substrate heat absorption portions 13ea to 13ed of the cooling member 13. The inner surfaces of 32ia to 32id are brought into contact with each other.
　この状態で、固定ねじ３４を、取付フランジ部３２ｈａ～３２ｈｃ及び３２ｉａ～３２ｉｄのねじ挿通孔３２ｊを通じて基板吸熱部１３ｄａ～１３ｄｃ及び１３ｅａ～１３ｅｄの雌ねじ部１３ｆに螺合させて締付けることにより、基板吸熱部１３ｄａ～１３ｄｃ及び１３ｅａ～１３ｅｄと取付フランジ部３２ｈａ～３２ｈｃ及び３２ｉａ～３２ｉｄとを固定する。 In this state, the fixing screws 34 are screwed into the female screw portions 13f of the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed through the screw insertion holes 32j of the mounting flange portions 32ha to 32hc and 32ia to 32id, and tightened, thereby tightening the substrate heat absorption. The portions 13da to 13dc and 13ea to 13ed and the mounting flange portions 32ha to 32hc and 32ia to 32id are fixed.
　その他の構成については前述した第１の実施形態と同様の構成を有し、図３及び図４との対応部分には同一符号を付しその詳細説明はこれを省略する。
　この第２の実施形態によると、冷却部材１３の基板吸熱部１３ｄａ～１３ｄｃ及び１３ｅａ～１３ｅｄが半導体パワーモジュール１１のケース体１２の下側から、ケース体１２に形成された貫通孔１２ａａ～１２ａｃ及び１２ｂａ～１２ｂｄを挿通して上方に突出されている。 The other configurations are the same as those of the first embodiment described above, and the same reference numerals are given to the corresponding portions to those in FIGS. 3 and 4 and the detailed description thereof will be omitted.
According to the second embodiment, the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed of the cooling member 13 are formed through the through holes 12aa to 12ac formed in the case body 12 from the lower side of the case body 12 of the semiconductor power module 11. 12ba-12bd is inserted and protrudes upward.
　そして、基板吸熱部１３ｄａ～１３ｄｃ及び１３ｅａ～１３ｅｄの上端に制御回路基板ユニットＵＣの伝熱板３２の突出部１３ｅ及び１３ｆが載置されると共に、基板吸熱部１３ｄａ～１３ｄｃ及び１３ｅａ～１３ｅｄの外面に取付フランジ部３２ｈａ～３２ｈｃ及び３２ｉａ～３２ｉｄの内面が接触されて固定ねじ３４で固定されている。
　このため、上述第１の実施形態と同様に、制御回路基板２２の下面側に実装された発熱回路部品３９の発熱が伝熱部材３５を介して伝熱板３２に伝熱され、この伝熱板３２に伝熱された熱が取付フランジ部３２ｈａ～３２ｈｃ及び３２ｉａ～３２ｉｄを介して冷却部材１３の基板吸熱部１３ｄａ～１３ｄｃ及び１３ｅａ～１３ｅｄに吸熱される。 The protrusions 13e and 13f of the heat transfer plate 32 of the control circuit board unit UC are placed on the upper ends of the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed, and the outer surfaces of the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed are mounted. The mounting flange portions 32ha to 32hc and the inner surfaces of 32ia to 32id are brought into contact with each other and fixed with fixing screws 34.
Therefore, as in the first embodiment, the heat generated by the heat generating circuit component 39 mounted on the lower surface side of the control circuit board 22 is transferred to the heat transfer plate 32 via the heat transfer member 35, and this heat transfer is performed. The heat transferred to the plate 32 is absorbed by the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed of the cooling member 13 through the mounting flange portions 32ha to 32hc and 32ia to 32id.
　そして、これら基板吸熱部１３ｄａ～１３ｄｃ及び１３ｅａ～１３ｅｄで吸熱した熱が底板部１３ａから冷却体３に放熱される。したがって、制御回路基板２２に実装された発熱回路部品３９の発熱を伝熱部材３５、伝熱板３２及び冷却部材１３を介して冷却体３に効率よく放熱することができる。
　言い換えれば、冷却体３によって、冷却部材１３、伝熱板３２、伝熱部材３５を介して制御回路基板２２に実装された発熱回路部品３９を効率よく冷却することができる。 The heat absorbed by the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed is radiated from the bottom plate portion 13a to the cooling body 3. Therefore, the heat generated by the heat generating circuit component 39 mounted on the control circuit board 22 can be efficiently radiated to the cooling body 3 through the heat transfer member 35, the heat transfer plate 32, and the cooling member 13.
In other words, the heat generating circuit component 39 mounted on the control circuit board 22 through the cooling member 13, the heat transfer plate 32, and the heat transfer member 35 can be efficiently cooled by the cooling body 3.
　この第２の実施形態によっても上述した第１の実施形態と同様の作用効果を得ることができる。また、第２の実施形態では、冷却部材１３の基板吸熱部１３ｄａ～１３ｄｃ及び１３ｅａ～１３ｅｄが半導体パワーモジュール１１のケース体１２に形成された貫通孔１２ａａ～１２ａｃ及び１２ｂａ～１２ｂｄを通って上方に延長している。このため、これら基板吸熱部１３ｄａ～１３ｄｃ及び１３ｅａ～１３ｅｄによって、半導体パワーモジュール１１の内部を冷却することができ、半導体パワーモジュール１１の冷却効果をより向上させることができる。 Also in the second embodiment, the same effect as that of the first embodiment described above can be obtained. In the second embodiment, the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed of the cooling member 13 are passed upward through the through holes 12aa to 12ac and 12ba to 12bd formed in the case body 12 of the semiconductor power module 11. It is extended. For this reason, the inside of the semiconductor power module 11 can be cooled by the substrate heat absorbing portions 13da to 13dc and 13ea to 13ed, and the cooling effect of the semiconductor power module 11 can be further improved.
　なお、上記第１及び第２の実施形態においては、冷却部材１３の底板部１３ａが冷却体３の上面に直接接触する場合について説明したが、これに限定されるものではなく、図１０に示すように構成することもできる。
　すなわち、冷却体３の上面における半導体パワーモジュール１１及び冷却部材１３の下面に対向する中央位置に給水通路３ｃに達する開口部６１を形成し、この開口部６１の周囲に冷却部材１３の底板部１３ａの下面に接触するＯリング６２を配置する。一方、冷却部材１３の開口部６１に対向する下面に冷却体３の開口部６１に挿通される複数の冷却フィン６３が突出形成されている。 In addition, in the said 1st and 2nd embodiment, although the case where the baseplate part 13a of the cooling member 13 contacted the upper surface of the cooling body 3 directly was demonstrated, it is not limited to this and is shown in FIG. It can also be configured as follows.
That is, an opening 61 reaching the water supply passage 3 c is formed at a central position on the upper surface of the cooling body 3 facing the lower surfaces of the semiconductor power module 11 and the cooling member 13, and the bottom plate portion 13 a of the cooling member 13 is formed around the opening 61 An O-ring 62 that contacts the lower surface of the substrate is disposed. On the other hand, a plurality of cooling fins 63 that are inserted into the opening 61 of the cooling body 3 are formed on the lower surface of the cooling member 13 that faces the opening 61.
　そして、冷却体３に、冷却部材１３が冷却フィン６３を開口部６１内に挿通させるように載置し、この冷却部材１３上に半導体パワーモジュール１１のケース体１２を載置した状態で、固定ねじ１４によって、半導体パワーモジュール１１及び冷却部材１３を共締めする。このとき、冷却部材１３の底板部１３ａの下面がＯリング６２に接触するので、開口部６１に満たされる冷却水が外部に漏出することを防止することができる。 The cooling member 13 is placed on the cooling body 3 so that the cooling fins 63 are inserted into the openings 61, and the case body 12 of the semiconductor power module 11 is placed on the cooling member 13. The semiconductor power module 11 and the cooling member 13 are fastened together with the screws 14. At this time, since the lower surface of the bottom plate portion 13a of the cooling member 13 contacts the O-ring 62, it is possible to prevent the cooling water filled in the opening 61 from leaking to the outside.
　この場合には、冷却部材１３に複数の冷却フィン６３が形成され、これら冷却フィン６３が冷却体３の開口部６１を通じて冷却水に接触される。このため、冷却部材１３の冷却効果をより向上させることができ、半導体パワーモジュール１１及び制御回路基板２２に実装された発熱回路部品の放熱をより効率よく行うことができ、上部筐体２Ｂ内の温度上昇を確実に防止することができる。 In this case, a plurality of cooling fins 63 are formed on the cooling member 13, and these cooling fins 63 are brought into contact with the cooling water through the openings 61 of the cooling body 3. For this reason, the cooling effect of the cooling member 13 can be further improved, the heat generating circuit components mounted on the semiconductor power module 11 and the control circuit board 22 can be radiated more efficiently, and the inside of the upper housing 2B The temperature rise can be reliably prevented.
　なお、上記第１及び第２の実施形態においては、本発明による電力変換装置を電気自動車に適用する場合について説明したが、これに限定されるものではなく、ハイブリッド車両や軌条を走行する鉄道車両にも本発明を適用することができ、任意の電気駆動車両に適用することができる。さらに電力変換装置としては電気駆動車両にかぎらず、他の産業機器における電動モータ等のアクチュエータを駆動する場合に本発明の電力変換装置を適用することができる。 In the first and second embodiments described above, the case where the power conversion device according to the present invention is applied to an electric vehicle has been described. However, the present invention is not limited to this, and a hybrid vehicle or a railway vehicle that travels on a rail. The present invention can also be applied to any electric drive vehicle. Furthermore, the power conversion device of the present invention can be applied to a case where an actuator such as an electric motor in other industrial equipment is driven as well as an electrically driven vehicle.
　本発明によれば、半導体パワーモジュールの冷却部材に、発熱回路部品を含む回路部品を実装した実装基板近傍に延長する基板吸熱部を有するので、実装基板の発熱部品での発熱を、半導体パワーモジュールを冷却する冷却部材の基板吸熱部で吸熱して冷却体に放熱することができ、別途放熱経路を設けることなく、実装基板の発熱部品の発熱を確実に放熱することができる電力変換装置を提供することができる。 According to the present invention, the cooling member of the semiconductor power module has the substrate heat absorbing portion extending in the vicinity of the mounting substrate on which the circuit components including the heat generating circuit components are mounted. Provided a power converter that can absorb heat at the substrate heat absorption part of the cooling member that cools the heat and dissipate heat to the cooling body, and can reliably dissipate heat generated by the heat generating components of the mounting board without providing a separate heat dissipation path can do.
　１…電力変換装置、２…筐体、２Ａ…下部筐体、２Ｂ…上部筐体、３…冷却体、４…フィルムコンデンサ、５…蓄電池収納部、１１…半導体パワーモジュール、１２…ケース体、１２ａａ～１２ａｃ、１２ｂａ～１２ｂｄ…貫通孔、１３…冷却部材、１３ａ…底板部、１３ｂ，１３ｃ、１３ｄａ～１３ｄｃ、１３ｅａ～１３ｅａ…基板吸熱部、２１…駆動回路基板、２２…制御回路基板、２４…継ぎねじ、３２…伝熱板、３２ａ，３２ｂ…突出部、３２ｃ、３２ｄ…取付フランジ部、３２ｆ，３２ｇ…突出部、３２ｈａ～３２ｈｃ，３２ｉａ～３２ｉｄ…取付フランジ部、３５…伝熱部材、４０…間座（間隔調整部材）、６１…開口部、６２…Ｏリング、６３…冷却フィン DESCRIPTION OF SYMBOLS 1 ... Power converter device, 2 ... Housing | casing, 2A ... Lower housing | casing, 2B ... Upper housing | casing, 3 ... Cooling body, 4 ... Film capacitor, 5 ... Storage battery storage part, 11 ... Semiconductor power module, 12 ... Case body, 12aa to 12ac, 12ba to 12bd ... through hole, 13 ... cooling member, 13a ... bottom plate, 13b, 13c, 13da to 13dc, 13ea to 13ea ... substrate heat absorbing part, 21 ... drive circuit board, 22 ... control circuit board, 24 ... Joint screw, 32 ... Heat transfer plate, 32a, 32b ... Projection, 32c, 32d ... Mounting flange, 32f, 32g ... Projection, 32ha-32hc, 32ia-32id ... Mounting flange, 35 ... Heat transfer member, 40 ... spacer (space adjusting member), 61 ... opening, 62 ... O-ring, 63 ... cooling fin

Claims (13)

  1. 　一面に冷却体に接合する冷却部材を備えた半導体パワーモジュールと、
    　前記半導体パワーモジュールの他面側に、前記半導体パワーモジュールを駆動する発熱回路部品を含む回路部品を実装した実装基板とを備え、
    　前記冷却部材は、前記実装基板近傍に延長する基板吸熱部を有する
    　ことを特徴とする電力変換装置。     A semiconductor power module having a cooling member bonded to a cooling body on one surface;
    On the other side of the semiconductor power module, a mounting substrate on which circuit components including a heat generating circuit component for driving the semiconductor power module are mounted, and
    The power conversion device, wherein the cooling member has a substrate heat absorbing portion extending in the vicinity of the mounting substrate.
  2. 　前記基板吸熱部は、前記半導体パワーモジュールの一面側から当該半導体パワーモジュールの側面を通って他面側に延長していることを特徴とする請求項１に記載の電力変換装置。 2. The power conversion device according to claim 1, wherein the substrate heat absorbing portion extends from one surface side of the semiconductor power module to the other surface side through the side surface of the semiconductor power module.
  3. 　前記基板吸熱部は、前記半導体パワーモジュールの一面側から当該半導体パワーモジュール内部を通って他面側に延長していることを特徴とする請求項１に記載の電力変換装置。 The power conversion device according to claim 1, wherein the substrate heat absorption part extends from one side of the semiconductor power module to the other side through the inside of the semiconductor power module.
  4. 　電力変換用の半導体スイッチング素子をケース体に内蔵し、当該ケース体の一面に冷却体に接触する冷却部材が形成された半導体パワーモジュールと、
    　前記半導体スイッチング素子を駆動する発熱回路部品を含む回路部品を実装し、前記半導体パワーモジュールの他面との間に所定間隔を保って支持される実装基板とを備え、
    　前記冷却部材は、前記半導体パワーモジュールの他面側の前記実装基板近傍に延長する基板吸熱部を有する
    　ことを特徴とする電力変換装置。     A semiconductor power module in which a semiconductor switching element for power conversion is built in a case body, and a cooling member that contacts the cooling body is formed on one surface of the case body;
    Mounting a circuit component including a heat generating circuit component for driving the semiconductor switching element, and a mounting substrate supported at a predetermined interval between the other surface of the semiconductor power module;
    The cooling member has a substrate heat absorbing portion extending near the mounting substrate on the other surface side of the semiconductor power module.
  5. 　前記基板吸熱部は、前記半導体パワーモジュールの一面側から当該半導体パワーモジュールの側面を通って他面側に延長していることを特徴とする請求項４に記載の電力変換装置。 5. The power conversion device according to claim 4, wherein the substrate heat absorbing portion extends from one surface side of the semiconductor power module to the other surface side through the side surface of the semiconductor power module.
  6. 　前記基板吸熱部は、前記半導体パワーモジュールの一面側から当該半導体パワーモジュール内部を通って他面側に延長していることを特徴とする請求項４に記載の電力変換装置。 5. The power conversion device according to claim 4, wherein the substrate heat absorbing portion extends from one side of the semiconductor power module to the other side through the inside of the semiconductor power module.
  7. 　前記実装基板の発熱を前記冷却部材の基板吸熱部に伝熱する伝熱板を備えていることを特徴とする請求項１乃至６の何れか１項に記載の電力変換装置。 The power conversion device according to any one of claims 1 to 6, further comprising a heat transfer plate that transfers heat generated by the mounting substrate to a substrate heat absorbing portion of the cooling member.
  8. 　前記実装基板と前記伝熱板との間に伝熱部材が介挿されていることを特徴とする請求項７に記載の電力変換装置。 The power conversion device according to claim 7, wherein a heat transfer member is interposed between the mounting substrate and the heat transfer plate.
  9. 　前記冷却部材は熱伝導率の高い金属材料で構成されていることを特徴とする請求項１乃至６の何れか１項に記載の電力変換装置。 The power converter according to any one of claims 1 to 6, wherein the cooling member is made of a metal material having a high thermal conductivity.
  10. 　前記伝熱板は、熱伝導率の高い金属材料で構成されていることを特徴とする請求項７に記載の電力変換装置。 The power conversion device according to claim 7, wherein the heat transfer plate is made of a metal material having high thermal conductivity.
  11. 　前記伝熱部材は、絶縁性を有する絶縁体で構成されていることを特徴とする請求項８に記載の電力変換装置。 The power conversion device according to claim 8, wherein the heat transfer member is formed of an insulating material.
  12. 　前記伝熱部材は、伸縮性を有する弾性体で構成されていることを特徴とする請求項８に記載の電力変換装置。 The power conversion device according to claim 8, wherein the heat transfer member is made of an elastic body having elasticity.
  13. 　前記伝熱部材は、伸縮性を有する弾性体で構成され、前記実装基板の前記伝熱部材側実装面に前記発熱回路部品が実装されていることを特徴とする請求項８に記載の電力変換装置。 The power conversion according to claim 8, wherein the heat transfer member is formed of an elastic body having elasticity, and the heat generating circuit component is mounted on the heat transfer member side mounting surface of the mounting board. apparatus.
PCT/JP2012/007310 2012-01-13 2012-11-14 Power conversion apparatus WO2013105166A1 (en)

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