WO2010106851A1 - 半導体用ボンディングワイヤ - Google Patents
半導体用ボンディングワイヤ Download PDFInfo
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- WO2010106851A1 WO2010106851A1 PCT/JP2010/052029 JP2010052029W WO2010106851A1 WO 2010106851 A1 WO2010106851 A1 WO 2010106851A1 JP 2010052029 W JP2010052029 W JP 2010052029W WO 2010106851 A1 WO2010106851 A1 WO 2010106851A1
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- wire
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
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- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
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- C22C21/12—Alloys based on aluminium with copper as the next major constituent
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Definitions
- the present invention relates to a bonding wire for a semiconductor used for connecting an electrode on a semiconductor element and a wiring of a circuit wiring board (lead frame, substrate, tape, etc.).
- bonding wires having a wire diameter of about 20 to 50 ⁇ m are mainly used as bonding wires for semiconductors (hereinafter referred to as bonding wires) for bonding between electrodes on semiconductor elements and external terminals.
- Bonding wires are generally joined by ultrasonic thermocompression bonding, and a general-purpose bonding apparatus, a capillary jig used for connection through the bonding wire, or the like is used. After the wire tip was heated and melted by arc heat input and a ball portion was formed by surface tension, this ball portion was pressure-bonded onto the electrode of the semiconductor element heated within the range of 150 to 300 ° C. The wire is directly bonded to the external lead side by ultrasonic pressure bonding.
- the structure, materials, connection technology, etc. of semiconductor packaging have been diversified rapidly.
- the packaging structure uses a substrate, polyimide tape, etc.
- BGA Bit Grid Array
- CSP Chip Scale
- a new form such as Packaging has been put into practical use, and a bonding wire with improved loopability, joining property, mass production usability and the like is required.
- Even in such bonding wire connection technology in addition to the current mainstream ball / wedge bonding, wedge / wedge bonding suitable for narrow pitches bonds the bonding wire directly at two locations, improving the bondability of thin wires Is required.
- the materials used as bonding partners for bonding wires are also diversified, and copper suitable for finer wiring has been put to practical use in addition to conventional Al alloys for wiring on silicon substrates and electrode materials.
- Ag plating, Pd plating, etc. are applied on the lead frame, and copper wiring is applied on the resin substrate, tape, etc., on which noble metal elements such as gold and alloys thereof are applied. In many cases, a film is applied. In accordance with these various bonding partners, it is required to improve the bonding property and bonding portion reliability of the bonding wire.
- Requirement from wire bonding technology is that it is important to form a ball part having a clean surface with a true sphere at the time of ball formation and to obtain sufficient joint strength at the joint part between the ball part and the electrode. Further, in order to cope with a decrease in the bonding temperature, a thinning of the bonding wire, and the like, a bonding strength, a tensile strength, and the like at a portion where the bonding wire is wedge-connected to the wiring portion on the circuit wiring board are also required.
- the material of the bonding wire has so far been mainly made of high purity 4N (purity> 99.99 mass%) gold.
- high purity 4N purity> 99.99 mass% gold.
- a small amount of alloy elements are adjusted.
- a gold alloy wire having a purity of 2N (purity> 99%) with an additive element concentration increased to 1% or less has been put into practical use for the purpose of improving the reliability of the joint.
- the type and concentration of the alloy element added to gold it is possible to increase the strength, control the reliability, and the like.
- the alloying may cause adverse effects such as a decrease in bondability and an increase in electrical resistance, and it is difficult to comprehensively satisfy various characteristics required for bonding wires.
- All the bonding wires put to practical use so far have a single layer structure. Even if the material is different from gold, copper, etc., alloy elements are uniformly contained therein, and all of the wire cross sections of the bonding wires have a single-layer structure. In some cases, a thin natural oxide film, an organic film for surface protection, or the like is formed on the wire surface of the bonding wire, but these are also limited to the extremely thin region (up to several atomic layers level) on the outermost surface.
- Patent Document 1 In order to increase the material cost at low cost, excellent electrical conductivity, ball bonding, wedge bonding, and the like, a bonding wire using copper as a raw material has been developed, and Patent Document 1 is disclosed.
- copper bonding wires have problems in that the bonding strength is reduced due to the oxidation of the wire surface, and that the wire surface is easily corroded when sealed with a resin. These are also the reasons why the practical application of copper bonding wires has not progressed.
- Patent Document 2 discloses that a copper wire is connected to a copper or copper alloy lead frame in an atmosphere of 5 vol% H 2 + N 2 .
- Non-Patent Document 1 it is reported that 5 vol% H 2 + N 2 gas is more preferable than N 2 gas for forming a ball of a copper bonding wire because oxidation of the ball surface can be suppressed.
- 5 vol% H 2 + N 2 gas is standardized as a gas used when using copper-based bonding wires.
- Patent Document 1 proposes a bonding wire in which copper is coated with a noble metal such as gold, silver, platinum, palladium, nickel, cobalt, chromium, titanium, or a corrosion-resistant metal.
- Patent Document 3 describes a core material mainly composed of copper, a dissimilar metal layer made of a metal other than copper formed on the core material, and There has been proposed a bonding wire formed on the dissimilar metal layer and having a coating layer structure made of an oxidation-resistant metal having a melting point higher than that of copper.
- Patent Document 4 has a core material containing copper as a main component, and an outer skin layer containing copper and a metal different from one or both of the core material and its component or composition on the core material.
- a bonding wire that is a thin film having a thickness of 0.001 to 0.02 ⁇ m has been proposed.
- Patent Document 5 proposes a bonding wire in which the outer peripheral surface of a core wire made of high-purity Au or Au alloy is covered with a coating material made of high-purity Pd or Pd alloy.
- Patent Document 6 proposes a bonding wire in which the outer peripheral surface of a core wire made of high-purity Au or Au alloy is covered with a coating material made of high-purity Pt or Pt alloy.
- Patent Document 7 proposes a bonding wire in which the outer peripheral surface of a core wire made of high-purity Au or Au alloy is coated with a coating material made of high-purity Ag or Ag alloy.
- the loop control in the bonding process is stable, the bondability is improved, the deformation of the bonding wire is suppressed in the resin sealing process, and the long-term reliability of the connection part It is desired that high-density mounting such as state-of-the-art narrow pitch and three-dimensional wiring can be achieved by satisfying comprehensive characteristics such as performance.
- a bonding wire having a multilayer structure (hereinafter referred to as a multi-layer wire) is expected to further improve characteristics and increase added value as compared to a single-layer wire.
- a multi-layer wire is expected to further improve characteristics and increase added value as compared to a single-layer wire.
- a noble metal or an oxidation-resistant metal it is possible to coat the surface of the wire with a noble metal or an oxidation-resistant metal as a multi-layered wire that provides high functionality.
- Even a gold bonding wire is expected to have an effect of reducing the resin flow by coating the wire surface with a high-strength metal or alloy.
- the bonding strength of the ball portion or the bonding wire can be increased by covering the wire surface with a high strength metal or alloy.
- the core material mainly composed of one or more elements of Cu, Au, and Ag
- Pd when Pd is used as the noble metal coated on the surface, oxidation suppression, adhesion to the electrode, adhesion to the sealing resin, It can be expected to satisfy the requirements comprehensively, such as cheap material costs.
- the present inventors have evaluated in consideration of needs such as high density, miniaturization, and thinning of semiconductor mounting.
- needs such as high density, miniaturization, and thinning of semiconductor mounting.
- the practical use as described later is made. It turns out that many of the above problems remain.
- Multi-layer wires with a Pd coating layer that is harder and more brittle than Cu, Au, and Ag cores have more manufacturing problems than single-layer wires during the wire mass production process or during large-scale continuous bonding. .
- rolls and dies wear more severely than single-layered wires, resulting in quality problems due to scratches on the wire surface or increased manufacturing costs due to reduced die life Is a problem.
- the complicated loop control in the wire bonding process causes the capillary inner wall to be rubbed by the Pd coating layer, resulting in increased capillary replacement frequency and lower productivity than the single-layer wire. It becomes.
- the ball portion When the ball portion is formed of a multilayer wire, the occurrence of a flat ball deviated from the true sphere, irregularities on the ball surface, bubbles inside the ball, or microholes on the ball surface becomes a problem.
- the deformation of the ball part When such an abnormal ball part is joined on the electrode, the deformation of the ball part is shifted from the center of the wire, and the deformed part deviates from the perfect circle, causing elliptical deformation, petal deformation, etc. This may cause problems such as protrusion, decrease in bonding strength, chip damage, and production management problems. Such poor initial bonding may induce a decrease in long-term reliability of the ball bonded part in a high temperature and high humidity environment.
- One of the causes may be that impurities and gas components remain in the outer layer, in the vicinity of the boundary between the outer layer and the core material, etc. in the manufacturing process of the multilayer wire.
- the present invention solves the above-mentioned problems of the prior art, suppresses peeling / dropping of the coating layer on the wire surface, improves workability, good ball bondability, stabilization of the loop shape, die life or capillary
- An object of the present invention is to provide a bonding wire for a semiconductor which has improved performance such as an increase in replacement life.
- the present inventors have found that it is effective to optimize the hydrogen concentration contained in the bonding wire. Further, it has been found that the control of the outer layer or diffusion layer thickness, the addition of alloy elements in the core material, and the like is effective.
- the present invention has been made on the basis of the above knowledge, and has the following configuration.
- the bonding wire for a semiconductor according to claim 1 is a core material mainly composed of any one or more elements of Cu, Au, and Ag, and an outer layer mainly composed of Pd formed on the surface of the core material
- the bonding wire according to claim 2 is characterized in that, in claim 1, the hydrogen concentration is in a range of 0.0001 to 0.004 mass%.
- a bonding wire according to a third aspect is the bonding wire according to the first or second aspect, wherein the hydrogen concentration is a thermal desorption gas analysis (Thermal Desorption). It is a hydrogen concentration contained in the whole wire measured by Spectrometry (TDS).
- TDS Spectrometry
- a bonding wire according to a fourth aspect is the bonding wire according to any one of the first to third aspects, wherein in the thermal desorption gas analysis measured at a temperature rising rate of 100 to 300 ° C / h, The hydrogen concentration detected in the temperature range of ⁇ 500 ° C. is characterized in that the ratio of the total hydrogen concentration detected in the whole temperature range is 50% or more.
- the bonding wire according to claim 5 is characterized in that in any one of claims 1 to 4, the thickness of the outer layer is in the range of 0.01 to 0.2 ⁇ m.
- the bonding wire according to claim 6 is the bonding wire according to any one of claims 1 to 5, wherein a thickness of a region having a Pd concentration in a range of 80 mol% with respect to the total amount of metal-based elements in the outer layer is 0.003 to 0.08 ⁇ m. It is characterized by that.
- the bonding wire according to claim 7 has a diffusion layer having a concentration gradient between the outer layer and the core material according to any one of claims 1 to 6, and the thickness of the diffusion layer is 0.003 to 0.15 ⁇ m. It is characterized by being.
- a bonding wire according to claim 8 is the bonding wire according to any one of claims 1 to 7, wherein the main component of the core material is Cu or Au, and contains one or more elements of Pd, Ag, and Pt,
- the element concentration in the core material is in the range of 0.01 to 2 mol% in total.
- the bonding wire according to claim 9 is the bonding wire according to any one of claims 1 to 8, wherein the main component of the core material is Cu, and contains at least one alloy element of Al, Sn, Zn, B, and P.
- the alloy element concentration in the entire wire is in the range of 0.0001 to 0.05 mol% in total.
- the bonding wire according to claim 10 is characterized in that, in claim 1, the core material has Cu as a main component and has one or more concentrated layers of Ag and Au on the surface side of the outer layer.
- a bonding wire according to claim 11 is characterized in that, in claim 10, the concentrated layer has one or more concentration gradients of Ag and Au in the wire radial direction.
- the bonding wire according to claim 12 is characterized in that, in claim 10, the Pd concentration at the outermost surface of the concentrated layer is in the range of 20 to 90 mol%.
- a bonding wire according to a thirteenth aspect is characterized in that, in the tenth aspect, a Pd single metal layer is provided inside the outer layer.
- the bonding wire according to claim 14 is characterized in that, in claim 10, the thickness of the outer layer having the concentrated layer is in the range of 0.02 to 0.4 ⁇ m.
- the bonding wire according to claim 15 is the bonding wire according to claim 1, wherein the core material includes Cu as a main component, and an intermediate layer in which at least one of Ag and Au is concentrated is provided between the core material and the outer layer. It is characterized by that.
- the bonding wire according to claim 16 is characterized in that, in claim 15, the intermediate layer has one or more concentration gradients of Ag and Au in the wire radial direction.
- the bonding wire according to claim 17 is characterized in that, in claim 15, the total concentration of Ag and Au in the intermediate layer is in the range of 30 to 90 mol%.
- the bonding wire according to claim 18 is the bonding wire according to claim 16, wherein the intermediate layer includes one or more elements of Ag and Au, Pd and Cu, and a concentration gradient of the three elements in the wire radial direction. It is characterized by including the area
- the bonding wire according to claim 19 is characterized in that, in claim 15, the total thickness of the outer layer and the intermediate layer is in the range of 0.02 to 0.5 ⁇ m.
- the bonding wire according to claim 20 is characterized in that, in claim 10 or 15, the total concentration of Pd, Ag and Au is in the range of 0.4 to 4 mol%.
- the bonding wire according to claim 21 is characterized in that, in claim 10 or 15, the ratio of the total concentration of Ag and Au to the Pd concentration is in the range of 0.001 to 0.4.
- the bonding wire having a multilayer structure of the present invention can improve both the sphericity of the ball portion and the wire workability. Moreover, stabilization of the crimping
- Concentration profile of bonding wire for outer layer, diffusion layer and core material Concentration profile of bonding wire for outer layer and core material with surface concentrated layer Concentration profile of bonding wire for outer layer, intermediate layer, and core material with a single metal layer Concentration profile of bonding wire for outer layer, intermediate layer, and core material, with concentration gradient containing 3 or more elements
- a bonding wire composed of a conductive metal core material and an outer layer containing Pd as a main component on the core material
- oxidation inhibition, wedge While bondability or long-term bonding reliability can be improved, peeling of the outer layer and dropping of the outer layer and joining shape in the wire manufacturing process and complicated loop control in the wire bonding process are problematic. It has been found that the ball joint shape is not sufficiently stable.
- the core material containing at least one element of Cu, Au, and Ag as a main component is a core material containing the element, for example, the main component is a concentration of the element of 50 mol% or more. It corresponds to the range.
- the core material is Cu, Au, or Ag, it can be used as a core material because it can be easily connected using the current wire bonding apparatus and has high overall reliability.
- the core material is Cu, it is most useful in terms of inexpensive material costs, suppression of oxidation by the Pd outer layer, and the like. From the viewpoint of managing the hydrogen concentration, the highest effect can be obtained when the core material is Cu.
- containing 0.0001% mass% or more has the effect of reducing the oxidation of Cu during arc discharge, improving the sphericity of the ball part and suppressing the shrinkage nest of the ball tip part. can get. If it exceeds 0.008% mass%, bubbles are generated inside the ball, so that the shape of the bonded portion becomes unstable and the bonding strength decreases.
- it is in the range of 0.0001 to 0.004 mm mass%, it is possible to further improve the ball bondability by suppressing the generation of pit-like microholes on the side surface of the ball, and to break the wire when drawn at high speed. It can be reduced to increase productivity.
- the drawing speed can be increased by suppressing the decrease in strength due to peeling of the outer layer of Pd and the clogging of the drawing die due to shavings. Suppressing die wear and improving die life can stabilize quality and improve production efficiency. Even more preferably, in the range of 0.0001 to 0.001% mass%, in the ultrafine wire with a wire diameter of 18 ⁇ m or less required for narrow pitch, the disconnection failure in the wire drawing process is reduced, and the yield is increased. Productivity can be further increased by speeding up the process. With respect to the problem that holes are clogged during bonding with a narrow pitch connection and the frequency of capillary replacement increases, the concentration replacement range can improve the capillary replacement life and increase the production efficiency of the mounting process.
- the thin Pd outer layer formed on the surface of the bonding wire by plating or the like has many different behaviors from the physical properties known for Pd bulk. It is considered that the hydrogen solubility and occlusion of the Pd thin film are different from those of the bulk. It is generally known that bulk Pd alloys have high hydrogen storage properties and can store hydrogen at 900 times the volume of Pd. However, in a thin Pd outer layer, the hydrogen solubility, proper concentration, etc. differ from the properties known for bulk Pd alloys. One of the factors is related to the fact that the structure of the outer layer, the grain size, the lattice defect density, and the like are different from the bulk, so that the hydrogen concentration depends on the manufacturing process of the bonding wire.
- the Pd outer layer, the vicinity of the boundary between the outer layer and the core material, the core material, the outermost surface of the bonding wire, etc. can be considered.
- the hydrogen concentration contained in the outer layer of Pd is often the highest, and this part of the hydrogen is expected to stabilize the ball formation by vaporizing some of the hydrogen when the bonding wire melts during discharge.
- the Hydrogen contained in the interface near the boundary between the outer layer and the core material or the diffusion layer affects the adhesion between the outer layer and the core material, and affects the occurrence of defects such as peeling and scratches during wire processing.
- the core material is Cu
- a small amount of hydrogen contained in Cu directly affects the stability at the time of loop formation or indirectly affects the oxygen content in Cu.
- the outermost surface refers to a region having a depth of up to 2 nm from the surface.
- the hydrogen concentration based on the total hydrogen concentration contained in the multilayer wire is the total concentration of hydrogen contained in the Pd outer layer, the vicinity of the boundary between the outer layer and the core material, the core material, and the outermost surface of the wire.
- the total concentration contained in the Pd outer layer is the total concentration of hydrogen contained in the Pd outer layer, the vicinity of the boundary between the outer layer and the core material, the core material, and the outermost surface of the wire.
- the hydrogen concentration contained in the multilayer wire may be a measurement of a bonding wire that has passed for a while after manufacturing. It has been confirmed that even when left in the air, the change in the concentration of hydrogen contained in the multilayer wire with time is small.
- the bonding wire is usually stored in a plastic container called a spool case to prevent dust from adhering to the outside air. In the normal storage state where the bonding wire is stored in the spool case, it was confirmed that the change in the hydrogen concentration was small until the air was left for about 4 months after the wire was manufactured.
- the conditions for preparing the measurement sample also affect the measurement concentration of hydrogen, but at least the sample is ultrasonically cleaned in acetone for about 1 minute before measurement, dried with cold air and weighed Then, by using it for concentration measurement, hydrogen can be measured with sufficient accuracy for the present invention.
- the measurement sample mass for quantification should be 2 g or more. Therefore, the hydrogen concentration according to the present invention means the hydrogen content expressed as mass% of hydrogen contained in the total mass of hydrogen contained in a certain mass of bonding wire. It is.
- TDS analysis thermal desorption spectroscopy
- the hydrogen concentration detected in the temperature range of 150 to 500 ° C. is detected in the total measurement temperature range.
- a bonding wire characterized in that the ratio to the hydrogen concentration is 50% or more is desirable.
- the total measurement temperature range preferably in the range of room temperature to 900 ° C., almost the total amount of hydrogen contained can be detected.
- the existence state of hydrogen contained in the multilayer wire is roughly classified into diffusible hydrogen and hydride. Diffusible hydrogen is hydrogen that can freely diffuse in the metal mainly as interstitial atoms.
- hydride is a compound of hydrogen and metal. Since hydride causes embrittlement and cracking at the time of wire deformation and induces the generation of deformed balls, it is desirable to keep the amount small. Diffusible hydrogen desorbs from the sample at a relatively low temperature.
- the multilayer wire having a wire diameter of 15 to 100 ⁇ m was investigated as a measurement sample, it was confirmed that it could be detected in the temperature range of 150 to 350 ° C. when measured at a temperature increase rate of 100 to 300 ° C./h.
- One hydride is detected mainly in the temperature range of 550-900 ° C.
- the ratio of the hydrogen concentration detected in the temperature range of 150 to 500 ° C to the total hydrogen concentration detected in the entire measurement temperature range is 50% or more, which means that most of the hydrogen contained in the bonding wire sample is This corresponds to diffusible hydrogen. If the ratio is 50% or more, it is possible to promote the effect of improving the roundness of the ball shape and the workability of wire manufacturing described above. Preferably, if it is 70% or more, the effect of improving the roundness by suppressing the generation of deformed balls when a fine wire having a wire diameter of 20 ⁇ m or less is used is further enhanced.
- the temperature range for detecting hydrogen depends on the rate of temperature increase, and the temperature range tends to shift to the higher temperature side as the rate of temperature increase increases.
- the hydrogen concentration largely depends on the manufacturing process of the multilayer wire. It was confirmed that the multi-layer wire immediately after forming the outer Pd layer generally has a high hydrogen concentration. If the hydrogen concentration is excessively high, problems such as embrittlement of the outer layer and a decrease in adhesion with the core material in the wire manufacturing process may cause a reduction in the bonding wire manufacturing yield and quality. It is relatively easy to release diffusible hydrogen mainly contained in the multilayer wire to the outside of the wire by heat treatment. Therefore, the use of a heat treatment process is effective for adjusting the proper hydrogen concentration. In this heat treatment step, the heat treatment conditions vary depending on the wire configuration, material, and processes before and after the heat treatment, and in addition, it is required to satisfy the overall bonding performance.
- the appropriate heat treatment conditions for adjusting the hydrogen concentration are clearly different from the heat treatment conditions of the core material alone or the Pd wire, for example, Heating at a low temperature for a relatively long time is effective. In one example, heating for 10 minutes to 2 hours in a temperature range of 150 to 300 ° C. can preferentially release excess hydrogen to stabilize the concentration of hydrogen contained in the entire multilayer wire. .
- the heat treatment performed in the normal bonding wire manufacturing process is aimed at optimizing mechanical properties and ensuring linearity by removing processing strain, etc., so the temperature is high at about 400 to 700 ° C, and it is in the heating furnace.
- the wire is passed at a high speed and the heating time is also several seconds.
- the heat treatment for adjusting the hydrogen concentration of the multilayer wire is characterized by a low temperature and a long time. Specific examples of the heat treatment conditions will be described later.
- the hydrogen concentration contained in the multilayer wire it is often effective to separately manage the hydrogen concentration in the intermediate process of manufacturing and the hydrogen concentration in the final product of wire bonding.
- problems peculiar to a multilayer structure such as adhesion between the outer layer and the core material, film thickness of the outer layer, and uniformity of the structure.
- a gradual reduction method is effective in which the concentration is relatively high during processing and the concentration is low in the final product.
- excessive hydrogen contained in the wire may be released at a time, which may cause surface scratches and disconnection. If the hydrogen concentration is decreased step by step, these process problems can be solved.
- the concentration range of 0.0001 to 0.008% mass% described above relates to a preferable hydrogen concentration in the final product, but if the hydrogen concentration of the intermediate product is in the range of 0.0002 to 0.015% mass%, stable productivity can be obtained.
- Managing the hydrogen concentration on the basis of the distinction between the appropriate bonding concentration and the appropriate process concentration is peculiar to the multi-layer wire, and is different from the conventional single-layer wire and the metal thin wire for other uses.
- the thickness of the outer layer is preferably in the range of 0.01 to 0.2 ⁇ m.
- the bonding wire did not cause a non-stick defect in the wire connection process even if it was left in the atmosphere at room temperature for 60 days. This is a significant extension of the shelf life compared to the conventional shelf life of single layer Cu wire within 7 days.
- the thickness of the outer layer is 0.01 ⁇ m or more, it is easy to stabilize the hydrogen concentration, and if the thickness exceeds 0.2 ⁇ m, there is a concern that the ball portion will be cured and chip damage may occur during bonding. Because.
- the thickness of the outer layer is in the range of 0.02 to 0.095 ⁇ m, in addition to improving oxidation resistance, the ball bonding strength can be increased, which is advantageous for low temperature bonding and the like.
- the thickness of the region where the Pd concentration relative to the total amount of metal elements is in the range of 80 mol% or more is preferably 0.003 to 0.08 ⁇ m.
- the thickness of the region (high concentration Pd layer) whose concentration is in the range of 80 mol% or more is 0.003 to 0.08 ⁇ m, the hydrogen distribution can be concentrated near the surface of the bonding wire.
- the high-concentration Pd layer having a Pd concentration in the range of 80 mol% or more has a hydrogen concentration action that distributes a large amount of hydrogen. Even if the total hydrogen concentration contained in the entire wire is low, it is possible to stably distribute low concentration hydrogen near the wire surface by managing the high concentration Pd layer. If the thickness of the high-concentration Pd layer is 0.003 ⁇ m or more, it is effective to act as hydrogen concentration, and if it exceeds 0.08 ⁇ m, the variation when a trapezoidal loop is formed increases.
- a diffusion layer having a concentration gradient is provided between the outer layer and the core material, and the thickness of the diffusion layer is 0.003 to 0.15 ⁇ m.
- having a diffusion layer having a concentration gradient in a thickness of 0.003 to 0.15 ⁇ m is effective in improving the linearity of the loop and stabilizing the loop shape.
- the diffusion layer is a layer formed by mutual diffusion of metals (Cu, Au, Ag) constituting the core material and Pd of the outer layer.
- the diffusion layer As the role of the diffusion layer, by controlling the movement of hydrogen from the outer Pd layer to the core material, the dispersion of the strength, rigidity, and structure of the core material is suppressed and homogenized, and the interface between the outer layer and the core material is reduced. It is conceivable to increase adhesion and suppress peeling, gaps, and the like due to the uneven distribution of hydrogen near the interface. That is, it can be understood that the diffusion layer improves the linearity and the stability of the loop shape by improving the homogenization of the core material and the adhesion of the interface between the outer layer and the core material.
- the thickness of the diffusion layer is 0.003 to 0.15 ⁇ m is that when the thickness is less than 0.003 ⁇ m, the above improvement effect is small, and when it exceeds 0.15 ⁇ m, the wedge bondability is deteriorated.
- the thickness is 0.01 to 0.1 ⁇ m, a higher effect of stabilizing the linearity and loop shape in a long span with a wire length of 5 mm or more can be obtained.
- FIG. 1 shows an example of a metal element concentration profile in the core material (wire diameter center) direction from the wire surface in the multilayer bonding wire.
- the wire is composed of a core material 1, an outer layer 2, and a diffusion layer 3.
- FIG. 1 shows concentration profiles of metal elements of the main component A of the outer layer and the main component B of the core material.
- the diffusion layer 3 is formed between the core material 1 and the outer layer 2.
- the detection concentration of Pd is in the range of 10 to 50 mol%, judging from the viewpoints of performance such as adhesion, strength, looping property, bondability, and productivity. This is because the diffusion layer in this concentration range has a low Pd concentration, and both the outer layer and the core material play different roles. Further, the boundary between the outer layer and the core material corresponds to a portion where the detected concentration of Pd is 50 mol% or more, that is, the outer layer is a region from the portion where the total detected concentration of Pd is 50 mol% to the surface area.
- the concentration ratio in the outer layer, the diffusion layer, the core material, etc. is a total concentration ratio of the metal elements constituting the outer layer and the core material, and C, O, N, H, Cl, S in the vicinity of the surface are used. Concentration values calculated by excluding isogas components and non-metallic elements are used.
- a method of analyzing while digging in the depth direction from the surface of the bonding wire by sputtering or the like, or line analysis or point analysis at the wire cross section is effective.
- the former is effective when the outer layer is thin, but it takes too much measurement time when the outer layer is thick.
- the analysis of the latter cross section is effective when the outer layer is thick, and the advantage is that it is relatively easy to confirm the concentration distribution over the entire cross section and reproducibility at several locations. If the thickness is thin, the accuracy decreases. It is also possible to measure by increasing the thickness of the diffusion layer by obliquely polishing the bonding wire.
- line analysis is relatively simple, but in order to improve the accuracy of analysis, it is also effective to narrow the analysis interval of line analysis or perform point analysis focusing on the area near the interface to be observed. is there.
- the analyzers used for concentration analysis should use electron microanalysis (EPMA), energy dispersive X-ray analysis (EDX), Auger spectroscopic analysis (AES), transmission electron microscope (TEM), etc. Can do.
- EPMA electron microanalysis
- EDX energy dispersive X-ray analysis
- AES Auger spectroscopic analysis
- TEM transmission electron microscope
- AES is effective for concentration analysis of the thinnest region because of its high spatial resolution.
- the main component of the core material is Cu and contains at least one alloy element of Al, Sn, Zn, B, and P, and the total concentration of the alloy element in the entire wire is 0.0001 to 0.05 mol%. A range is desirable.
- the total concentration of Cu, the main component of any one of Al, Sn, Zn, B, and P is in the range of 0.0001 to 0.03 mol%, and the Pd outer layer is above the core.
- the total hydrogen concentration contained in the entire wire is in the range of 0.0001 to 0.008 mass%, so that the leaning property, which is a defective mode such as when forming a high loop, can be improved.
- Multi-Tier Bonding In multi-stage connection with multiple pins (Multi-Tier Bonding), there is a concern that a leaning failure may occur in which the bonding wire collapses near the neck when forming a loop with a high loop height.
- a multilayer wire composed of a Cu core material and a Pd outer layer contains hydrogen, leaning defects tend to increase.
- the neck part is affected by the heat of ball melting, resulting in coarsening of recrystallized grains in the core material and hydrogen diffusion in the Pd outer layer or Cu core material. It is considered that non-uniformity is involved.
- One or more alloy elements of Al, Sn, Zn, B, and P make the mechanical properties and structure of the core material uniform, improving the leaning property.
- the improvement effect is small, and if it exceeds 0.05 mol%, the bonding wire is hardened, so that the peel joint strength, which is the strength evaluation of the wedge joint, decreases. It is.
- the main component of the core material is Cu or Au, and has one or more alloy elements of Pd, Ag, and Pt, and the alloy element concentration in the entire wire is in the range of 0.05 to 2 mol% in total. It is desirable.
- the total concentration of one or more alloy elements of Pd, Ag, and Pt in the core material, which is mainly composed of Cu or Au, is in the range of 0.01 to 2 mol%, and the upper surface of the core material is the Pd outer layer.
- the total hydrogen concentration contained in the entire wire is in the range of 0.0001 to 0.008 mass%, so that the reliability of the bonding portion between the bonding wire and the aluminum electrode can be improved.
- the bonding reliability test here, a high temperature and high humidity test (Pressure ⁇ ⁇ Cooker Test) is useful.
- PCT test as a typical condition, electrical characteristics or bonding strength is evaluated after heating at 130 ° C. and 85% RH for 300 to 1000 hours.
- the reliability may be lowered in the PCT test.
- the reason why reliability is improved by including at least one alloy element of Pd, Ag, and Pt in the range of 0.05 to 2 mol% in the core material is to reduce the compound growth rate at the bonding interface during heating.
- the region where the alloy element is concentrated at the bonding interface functions as a diffusion barrier against hydrogen.
- the concentration analysis of the element contained in the core material it is preferable to use a value obtained by averaging the concentration values obtained by the above-described analysis methods such as EPMA, EDX, AES at three or more locations on the wire cross section.
- the outer layer of the multi-layer bonding wire containing hydrogen at the hydrogen concentration With two or more layers, various functions such as bondability and loop shape can be improved.
- the relationship between the hydrogen concentration of the multi-layer bonding wire and the characteristics has been described mainly in the case where the outer layer has a single-layer structure, but the hydrogen concentration is also controlled in the multi-layer bonding wire composed of two or more layers of the outer layer and the concentrated layer. Is valid.
- a bonding wire composed of an outer layer and a thickened layer when the thickened layer is formed on the wire surface (referred to as a surface thickened layer), a thickened layer is formed between the core material and the outer layer.
- the explanation will be divided into two types of cases (referred to as intermediate layers).
- a core material mainly composed of Cu, an outer layer mainly composed of Pd on the core material, Ag or Au on the surface side of the outer layer has one or more concentrated layers, and is included in the entire wire
- the total hydrogen concentration is preferably in the range of 0.0001 to 0.008 mass%.
- the surface enriched layer of Ag or Au suppresses the intrusion of gas components such as hydrogen and oxygen from the wire surface, so that even in wires stored for a long period of time, the hydrogen concentration is kept almost constant, so that it can be used for wedge bonding. It is considered that good metal diffusion can be maintained.
- the surface concentrated layer is included in a part of the outer layer. This is based on the fact that there are many overlapping functions in the surface concentrated layer and the outer layer, and as described above, the outer layer is defined as a region from the Pd concentration of 50 mol% to the surface.
- FIG. 2 shows an example of a metal element concentration profile in the direction of the core material (wire diameter center) from the wire surface in the bonding wire provided with the outer layer having the above-described surface concentrated layer.
- a surface concentrated layer 4 having a main component C which is one or more of Ag and Au, and a single metal layer 5 described later is formed inside the outer layer 2.
- the element to be concentrated is one or more of Ag and Au
- wedge bondability higher than that of other elements is improved.
- the improvement effect is remarkable
- a high effect of improving the wedge bondability in the mounting of the QFN (Quad Flat Non-Lead) structure where low bondability is a problem was confirmed.
- QFN mounting since the lead part is not fixed sufficiently, bonding of bonding wires with reduced ultrasonic vibration is required.
- QFN mounting is difficult when the outer layer of the multi-layer bonding wire is hard Pd, but the continuous connectivity is improved by forming a concentrated layer of Ag and Au on the outer layer surface side, so QFN mounting Productivity can be improved.
- the hydrogen concentration management is more important than the case of the outer layer having no concentrated layer.
- the concentrated layer has a function of suppressing the release of hydrogen to the outside of the wire, so that the concentration of hydrogen contained in the wire in the manufacturing process becomes high, and the above-described problems such as a decrease in ball formation caused by hydrogen It is because it is easy to occur.
- Cu can contain a small amount of hydrogen, when the main component of the core is Cu, the relationship between the formation of the concentrated layer and the management of the hydrogen concentration is effective.
- the surface concentrated layer is preferably a solid solution alloy of at least one of Ag and Au and Pd.
- the region of the surface concentrated layer is defined as a region where the concentration of Ag and Au is 10 mol% or higher and higher than the surroundings. This is because the diffusion behavior at the joint and the bending of the wire during loop formation can be controlled in a high concentration region of 10 mol% or more locally. It was confirmed that the effect of stabilizing the loop shape tends to be higher in the concentrated layer than in the single metal region.
- the concentrated layer is not an intermetallic compound but a solid solution alloy, so that even a loop shape having a large bending angle such as a short span can be stabilized.
- the surface concentrated layer has a concentration gradient of one or more of Ag and Au.
- the concentration pull increases the second pull strength at the wedge joint, further improving the yield during mounting.
- This improvement effect is also effective in BGA or CSP, but in particular, the effect of increasing the second pull strength of the wedge joint in QFN mounting is higher.
- the surface concentrated layer has a concentration gradient, which is more effective in promoting large plastic deformation of the wire required for wedge bonding, interdiffusion at the bonding interface, etc., compared to almost constant concentration alloys. it is conceivable that.
- the gradient of the concentration gradient in the wire diameter direction is 10 mol% or more per 1 ⁇ m, the effect of increasing the second pull strength in the QFN mounting is further enhanced.
- it is 30 mol% or more per 1 ⁇ m, the effect of enhancing the second pull strength in QFN mounting by promoting mutual diffusion at the bonding interface has been confirmed.
- the Pd concentration at the outermost surface of the surface concentrated layer is in the range of 20 to 90 mol%.
- the effect of reducing the variation of the loop shape in the long span or improving the bonding property of the thin wire is enhanced.
- a problem wrinkled loop
- This is considered to be caused by an increase in friction between the hard Pd and the inner wall of the capillary, resulting in deterioration of slidability.
- the Pd concentration on the outermost surface is less than 90 mol%, in other words, the total concentration of Ag and Au is 10 mol% or more is that the long-span loop control is improved, and it is effective in improving the above Wrinkled Loop failure. Because. Further, by setting the total concentration of Ag and Au on the outermost surface of the concentrated layer to 10 mol% or more, the wedge bondability can be improved even for a thin wire having a wire diameter of 20 ⁇ m. On the other hand, when the Pd concentration is less than 20 mol%, that is, when the total concentration of Ag and Au is 80 mol% or more, an unmelted portion remains inside the ball, and the shear strength of the ball joint portion decreases. Preferably, when the Pd concentration is in the range of 30 to 80 mol%, a high effect such as suppression of Wrinkled-Loop defects can be obtained in an ultrafine wire having a wire diameter of 18 ⁇ m or less.
- a Pd single metal layer inside the outer layer having the surface concentrated layer. That is, a core material mainly composed of Cu, an outer layer mainly composed of Pd on the core material, and a bonding wire for semiconductors in which the total hydrogen concentration contained in the entire wire is in the range of 0.0001 to 0.008 mass%.
- the bonding wire for a semiconductor has a concentration layer of one or more of Ag and Au on the surface side of the outer layer, and a Pd single metal layer inside the outer layer.
- the Pd single metal layer corresponds to a region where the Pd concentration is 97% or more in consideration of restrictions such as a concentration measurement error.
- the position of the Pd single metal layer is preferably adjacent to the concentrated layer.
- the wire configuration from the wire surface to the inner direction it is exemplified by Ag or Au concentrated layer / Pd single metal layer / Pd—Cu diffusion layer / core material.
- the role of the single Pd metal layer is a barrier function that suppresses the diffusion of the core material toward the Cu surface.
- This barrier function has effects such as segregation of Cu on the surface and suppression of oxidation, and as a result, arc discharge is stabilized and ball formation with good sphericity becomes possible.
- the synergistic effect of the outer layer, Ag concentration on the surface, Au enriched layer, inner Pd single metal layer, hydrogen concentration management, even under severe conditions of joining small balls with thin wires The roundness and size stability of the ball joint can be improved. In particular, the improvement effect of rounding is remarkable in the case of large ball deformation where the diameter of the press-bonded ball is 3 times or more of the wire diameter.
- a single metal layer of Pd alone is not enough.
- the concentrated layer of Ag and Au on the surface can maintain the wedge bondability of the wire stored for a long time. It is effective to stabilize.
- the thickness of the single Pd metal layer is preferably in the range of 0.005 to 0.1 ⁇ m. If the thickness is 0.005 ⁇ m or more, the above effect can be obtained sufficiently, and if it exceeds 0.1 ⁇ m, the melting of Pd, which is a refractory metal, becomes unstable during ball formation, and the petal-like ball joint shape becomes a problem.
- the thickness of the outer layer having the surface concentrated layer is in the range of 0.02 to 0.4 ⁇ m.
- the hydrogen concentration was controlled. It is possible to achieve both improvement in ball bondability, which is an effect of the outer layer. If the thickness of the outer layer is 0.02 ⁇ m or more, it is easy to obtain the above effect, and if the thickness exceeds 0.4 ⁇ m, there is a concern that the ball portion is cured and chip damage may occur during bonding. is there.
- the second pull strength at a low temperature of the QFN mounting can be increased. More preferably, if it is in the range of 0.04 to 0.25 ⁇ m, a higher effect of increasing the ball bonding strength and second pull strength in the low temperature bonding of QFN mounting can be obtained.
- the inner concentrated layer plays a role in the penetration of hydrogen, oxygen, etc. into the inner direction, the reduction of the solid solution of hydrogen in Cu, and the barrier function that suppresses the diffusion of Cu atoms in the surface of the core material. This is considered to be because the generation of bubbles due to hydrogen, oxygen, etc. can be suppressed during ball solidification.
- the bondability of the ball part or the bump part can be improved as compared with other elements.
- the wedge bondability on the bump in reverse bonding mounting is improved. Since the bump surface is oxidized while being left on the heating stage for a while after the bump formation, the problem is that the wedge bondability on the bump is lower than the normal bonding form.
- the intermediate layer has the effect of reducing the formation of the Cu oxide film on the bump surface, and the yield and productivity in continuous bonding in reverse bonding mounting are improved. Note that reverse bonding refers to wedge bonding on a bump after ball bonding to a lead electrode.
- the total concentration of elements to be concentrated should be 20 mol% or more on both the outer layer side and the core side. This is based on the reason that the concentration necessary for efficiently expressing the barrier function required for the intermediate layer is 20 mol% or more.
- the intermediate layer has a concentration gradient of one or more of Ag and Au.
- the concentration gradient in the concentrated layer can improve the leanability of reverse bonding mounting.
- Leaning failure is a phenomenon in which a wire falls at an upright portion in the vicinity of a ball joint portion. In reverse bonding mounting, the length of the upright portion is considerably longer than that in a normal mounting form, and therefore, leaning failure is likely to occur.
- One cause of the failure is that the upright portion is formed with a non-uniform recrystallized structure due to the thermal effect during ball formation.
- the intermediate layer since the intermediate layer has a concentration gradient, the recrystallized structure and residual strain of the upright part affected by heat are uniform compared to the case of almost constant concentration.
- the effect which suppresses a leaning defect is acquired.
- the above effect can be obtained if the average gradient of the concentration gradient is 20 mol% or more per 1 ⁇ m. Preferably, if it is 60 mol% or more per 1 ⁇ m, the effect of suppressing leaning defects is enhanced.
- the maximum total concentration of Ag and Au in the intermediate layer is in the range of 30 to 90 mol%.
- an appropriate parameter window for wedge bonding onto the bumps is widened, and bonding is possible even in the range of low load and ultrasonic output, so that the bonding yield of reverse bonding is improved.
- ultrasonic vibration of wedge bonding on a complicatedly shaped bump can be reduced, wire bending can be suppressed.
- the intermediate layer has a concentration gradient, which is more effective in promoting large plastic deformation of the wire required for wedge bonding, interdiffusion at the bonding interface, etc., compared to a concentrated layer with a substantially constant concentration. it is conceivable that. This is because the above improvement effect can be obtained if the maximum concentration of Ag and Au is 30 mol% or more, and if it is 90 mol% or more, an unmelted portion remains inside the ball, and the shear strength of the ball bonded portion decreases.
- FIG. 3 shows an example of a metal element concentration profile from the wire surface to the core material (wire diameter center) direction in a bonding wire having an outer layer having an intermediate layer. Between the outer layer 2 and the core material 1, an intermediate layer 6 having a main component D that is one or more of Ag and Au is formed.
- FIG. 3A shows a case where the single metal layer 5 is provided inside the intermediate layer 6, and
- FIG. 3B shows a case where the intermediate layer 6 has a concentration gradient region 8 in which three or more elements are mixed.
- the outer layer / intermediate layer / core material is formed, and an intermediate layer is formed instead of the Pd—Cu diffusion layer which is the diffusion material of the core material and the outer layer.
- At least one element selected from Ag and Au is essential for concentration, and one or more elements selected from Pd and Cu are other elements.
- Examples of intermediate layers when Au is enriched are (1) concentration gradient of Pd and Au, (2) concentration gradient of Au and Cu, and (3) concentration gradient of three elements of Au, Pd, and Cu. are categorized.
- the concentration gradient is preferably a solid solution alloy formed by mutual diffusion.
- the configuration of the intermediate layer has at least one of (1) to (3). For example, since the intermediate layer is composed of a plurality of (1) + (2), (1) + (3), (1) + (2) + (3), the barrier function is further enhanced. Higher effects of improving the productivity of reverse bonding can be obtained. The same applies when the concentration element is Ag.
- the intermediate layer has a coexistence region of one or more of Ag and Au and a concentration gradient of three elements of Pd and Cu.
- the first pull strength in the vicinity of the ball in reverse bonding can be increased.
- An example of the coexistence region of the concentration gradient of the three elements corresponds to the above (3), and the first pull strength is increased by suppressing the recrystallization of the heat affected zone near the ball.
- the total thickness of the outer layer and the intermediate layer is preferably in the range of 0.02 to 0.5 ⁇ m. If this thickness is 0.02 ⁇ m or more, it is easy to obtain the effect of improving the continuous bonding property of reverse bonding described above. If the thickness is 0.5 ⁇ m or more, the ball portion is cured and chip damage occurs during bonding. This is because there are concerns.
- the ball bonding strength and the second pull strength in the low temperature bonding of reverse bonding can be increased. More preferably, when the thickness is in the range of 0.13 to 0.3 ⁇ m, a high effect of increasing the wedge bonding strength on the bump can be obtained in the overhang type reverse bonding in which the chip is liable to be broken during bonding.
- the boundary where the total concentration of Ag and Au is 20 mol% or the boundary where the Pd concentration is 50 mol% is closer to the wire center. Choose as.
- the maximum concentration of Ag and Au in the intermediate layer is low, most of the intermediate layer is contained in the outer layer. It is difficult to set the boundary between the outer layer and the intermediate layer from the functional aspect, and it is difficult to completely separate them. Rather, confirm that the total thickness of the outer layer and the intermediate layer is an effective index in terms of the correlation with bonding performance. Yes.
- the surface concentrated layer near the wire surface and the intermediate layer between the core material and the outer layer are mainly composed of Cu and Pd, respectively, and the elements to be concentrated are one or more of Ag and Au.
- the content concentration of these elements in the entire wire affects the ball bonding property, bonding reliability, and the like.
- it is a semiconductor bonding wire composed of at least one of a surface concentrated layer or an intermediate layer, an outer layer, and a core material, and the total concentration of Pd, Ag, and Au is in the range of 0.4 to 4 mol%. It is desirable. Within this concentration range, it is possible to obtain the effect of simultaneously satisfying the roundness of the ball joint in the 50 ⁇ m narrow pitch connection, the improvement of the shear strength, and the reduction of the Al splash.
- Al splash is a phenomenon in which Al is swept to the outer periphery of a ball joint when a hard ball is joined onto an Al electrode. When Al swept out by Al splash comes into contact with an adjacent junction, an electrical short circuit is defective, which is a factor that hinders narrow pitch connection.
- Pd, Ag, and Au contained in the outer layer, concentrated layer, and intermediate layer of the wire form a solid solution in Cu during ball solidification to form a Cu-Pd-Au alloy, a Pd-Ag-Cu alloy, and Pd, Ag and Au effectively promote the diffusion at the bonding interface, thereby effectively improving the ball bondability. It has been confirmed that the formation of such special alloys and the promotion of diffusion are promoted by the multi-layer bonding wire having the surface concentrated layer or the intermediate layer of the present invention more than the single-layer bonding wire. If the concentration is 0.4 mol% or more, it is easy to obtain the above effect, and if it exceeds 4 mol%, there is a concern that the ball portion is cured and chip damage occurs during bonding.
- the total concentration of Pd, Ag, and Au described above is in the range of 0.4 to 4 mol%, and the ratio R of the total concentration of Ag and Au to the Pd concentration is in the range of 0.001 to 0.4.
- the concentration ratio R of (Ag + Au) / Pd is in the above range, the effect of improving the high-temperature bonding reliability for the next-generation in-vehicle IC can be obtained.
- the high temperature bonding reliability corresponds to, for example, suppressing a decrease in bonding strength even by heating for 1500 hours at 185 ° C., which is higher than the current accelerated test.
- the correlation with the concentration ratio R of (Ag + Au) / Pd is stronger, and for convenience. I found it effective. The reason for this is that Pd, Ag, and Au are dissolved in Cu by melting and solidification during ball formation, and it is mainly the concentration that governs the bonding reliability of the ball part, and the thickness of each layer Depends on the definition of the layer boundary.
- the concentration ratio R of (Ag + Au) / Pd is within an appropriate range of 0.001 to 0.4, the effect of improving the high temperature bonding reliability can be obtained. It is difficult to mass-produce a multi-layer bonding wire having a considerably thin Ag and Au concentrated layer where R is less than 0.001. When R exceeds 0.4, there is a concern that the high-temperature bonding reliability is lowered.
- R is in the range of 0.002 to 0.3
- mass production technology for forming the surface concentrated layer or the internal concentrated layer is facilitated, the bonding reliability is further improved, and good at 2000 ° C. at 185 ° C. More preferably, in the range of 0.01 to 0.25, the productivity is improved by simplifying the manufacturing process of the bonding wire, and the bonding reliability is further improved, which is good up to 2500 hours at 185 ° C.
- the process of forming the outer layer, the surface concentrated layer and the intermediate layer on the surface of the core material, the structure of the outer layer, the surface concentrated layer, the intermediate layer, the diffusion layer, the core material, etc. are controlled. Processing and heat treatment processes are required.
- the composition and thickness of the outer layer, the surface concentrated layer, the intermediate layer, and the core material, the outer layer, the surface concentrated layer and the intermediate layer are formed in the step of forming the outer layer, the surface concentrated layer and the intermediate layer described above. The management of the thickness and composition at the initial stage of formation is first important.
- Examples of methods for forming the outer layer, the surface thickening layer, and the intermediate layer on the surface of the core include plating and vapor deposition.
- the plating method either electrolytic plating or electroless plating can be used.
- Electrolytic plating called strike plating or flash plating has a high plating speed and good adhesion to the substrate. Solutions used for electroless plating are classified into substitutional type and reduction type. If the film is thin, substitutional plating alone is sufficient, but when forming a thick film, reduction type plating is used after substitutional plating. It is effective to apply stepwise.
- the electroless method is simple and easy to use, but requires more time than the electrolysis method.
- hydrogen generated in the plating solution and the plating solution may remain in the outer layer, resulting in an increase in the concentration of hydrogen contained in the initial stage of the multilayer wire.
- electroplating hydrogen is often generated near the surface of the bonding wire, so this hydrogen is often taken into the outer layer.
- electrolytic plating it is possible to stably control the concentration of diffusible hydrogen introduced into the outer layer in the initial stage, so if the conditions in the manufacturing process such as processing after film formation and heat treatment are optimized, It is relatively easy to adjust the hydrogen concentration contained in the final product.
- vapor deposition method physical adsorption such as sputtering, ion plating, and vacuum deposition, and chemical adsorption such as plasma CVD can be used. All of them are dry-type, and cleaning after film formation is unnecessary, and there is no concern about surface contamination during cleaning.
- both the method of forming a film with a target wire diameter and the method of forming a film on a thick core material and drawing a wire multiple times to the target wire diameter are effective.
- manufacturing, quality control and the like are simple, and the latter film formation and wire drawing are advantageous in improving the adhesion between the film and the core material.
- Specific examples of each forming method include a method of forming a film on a core material of a target wire diameter while continuously sweeping a wire in an electrolytic plating solution, or a thick core in an electrolytic or electroless plating bath.
- there is a method of drawing a wire to reach the final diameter after the material is immersed to form a film there is a method of drawing a wire to reach the final diameter after the material is immersed to form a film.
- the in-line continuous plating method is exemplified by an outer layer plating step ⁇ a cleaning step ⁇ a surface concentrated layer plating step.
- the order of forming the surface concentrated layer and the intermediate layer is reversed. In the case of the surface concentrated layer, the order is the formation of the outer layer ⁇ the formation of the surface concentrated layer. In the case of the intermediate layer, the order is the formation of the intermediate layer ⁇ the formation of the outer layer.
- the outer layer forming step and the surface concentrated layer forming step do not necessarily have to be continuous, and include an improvement in adhesion, a heat treatment step for managing the hydrogen gas concentration, a wire drawing step, etc. It doesn't matter.
- a heat treatment step for managing the hydrogen gas concentration a wire drawing step, etc. It doesn't matter.
- the surface concentrated layer or the intermediate layer it is effective to use diffusion in the heat treatment step.
- the heat treatment step to be described later it is possible to form a desired surface concentrated layer, intermediate layer, and a concentration gradient inside thereof, but if necessary, heat treatment suitable for forming the surface concentrated layer or intermediate layer. It is also necessary to select conditions.
- the heat treatment process is one of the effective processes for controlling the hydrogen concentration.
- removal of processing strain control of recrystallized structure, adjustment of mechanical properties, control of surface concentrated layer or intermediate layer, formation of diffusion layer, etc. are also important roles. Since it is difficult to satisfy all these functions by a single heat treatment, it is productive to carry out a plurality of times. Simply heating the wire makes it difficult to achieve the above overall function. Even if the one-time processing strain relief annealing performed at the final wire diameter in normal wire manufacturing is applied as it is, it is difficult to improve the quality and manufacturing yield by optimizing the hydrogen concentration.
- the hydrogen concentration is reduced.
- Low temperature heating is effective as the heat treatment for adjustment.
- Even at a low temperature it is possible to optimize the total hydrogen concentration contained in the entire multilayer wire by releasing excessively contained diffusible hydrogen from the wire.
- the inventors' investigations have grasped that the influence of diffusible hydrogen on the use performance is the greatest among several forms of hydrogen contained in the multilayer wire.
- the concentration of diffusible hydrogen As a recommended condition for adjusting the concentration of diffusible hydrogen, it is desirable to adjust the temperature in the range of 100 to 400 ° C. A relatively long heating time is desirable. If heating is performed for a long time, it is effective for diffusing hydrogen contained in the wire to the surface, and there is little influence on the structure, strength, elongation, etc. of the bonding wire, so other processes can be managed. It is an advantage that it becomes easy.
- a heating method batch-type heat treatment using a heating furnace is simple. Such batch-type heat treatment is rarely performed in the manufacturing process of the conventional single-layer wire. In general, the processing for removing strain of bonding wire is continuous annealing in which the wire is heated while continuously moving at a high temperature of 300 to 700 ° C.
- Heat treatment for the purpose of controlling the recrystallization structure, adjusting the mechanical properties, controlling the composition of the surface concentrated layer, forming the diffusion layer, and the like is also necessary.
- the temperature is higher than the recrystallization temperature of the wire, and the temperature is uniform in the circumferential direction in order to uniformly form the intermediate layer and the diffusion layer between the outer layer and the core material. Desired.
- Continuous annealing in which heat treatment is performed while continuously sweeping the wire, is productive. Heat inside the furnace set at a temperature of 250-700 ° C while moving at a speed of 10-400 m / min.
- a uniform heating method in which the furnace temperature is constant or a heating method in which a temperature gradient is provided in the furnace can be selected.
- a method of introducing a temperature gradient locally and a method of changing the temperature in the furnace are also effective.
- By heating while flowing an inert gas such as N 2 or Ar into the furnace oxidation of the wire surface can be suppressed.
- the timing of this high-temperature heating can be divided into annealing in the middle of processing and finish annealing at the final diameter, and these can be selected and used properly.
- the number of heat treatments can be one or more. By dividing the heat treatment into a plurality of times, formation of the diffusion layer, removal of processing strain, and the like are achieved individually, which is effective in improving the performance of the bonding wire.
- the processing history before the heat treatment is related to the structure at the interface of the outer layer, the surface concentrated layer, the intermediate layer, the core material, etc., it affects the diffusion behavior in the heat treatment.
- the composition, thickness, and the like of the final outer layer, surface concentrated layer, intermediate layer, and diffusion layer vary depending on the processing stage at which the heat treatment is performed.
- the bonding wire created in the process of drawing the wire after intermediate annealing in the middle of processing and then finishing annealing with the final diameter compared to the process without intermediate annealing, outer layer, diffusion layer It has been confirmed that the composition and concentration gradient of the surface concentrated layer and the intermediate layer change.
- Cu, Au, Ag used as the raw material for the bonding wire is a high-purity material with a purity of about 99.99 mass% or more, and the outer layer Pd, surface enriched layer or intermediate layer Au, Ag has a purity of 99.9 More than mass% raw materials were prepared.
- an appropriate amount of alloy element was added in the step of melting the core material.
- a thin wire thinned to a certain wire diameter is used as a core material, and the surface of the Pd outer layer, one or more of Au and Ag are concentrated on the wire surface by electrolytic plating, electroless plating, and vapor deposition. did.
- the electrolytic plating solution and the electroless plating solution a plating solution commercially available for semiconductor applications was used, and the sputtering method was used for vapor deposition. The coating was performed in the order of outer layer formation ⁇ surface enriched layer formation or intermediate layer formation ⁇ outer layer formation.
- a heat treatment step, a wire drawing step, and the like were added between the outer layer formation and the surface concentrated layer or intermediate layer formation.
- the wire of the example of the present invention In the heat treatment of the wire of the example of the present invention, it is classified into two methods, batch-type annealing in which a thick wire is inserted into a heating furnace and heat-treated, and continuous annealing in which the fine wire is continuously swept while being heated. One or both heat treatments were utilized.
- batch-type annealing the main purpose was to adjust the hydrogen concentration and to form a diffusion layer. Heating was performed at a temperature range of 150 to 300 ° C. for 10 minutes to 2 hours.
- Continuous annealing was set to a temperature range of 300 to 700 ° C, and the wire sweep speed was adjusted to a range of 10 to 500 mm / min. Along with the temperature distribution, the wire sweep speed was also optimized.
- an inert gas such as N2 or Ar was also used in the heat treatment atmosphere for the purpose of suppressing oxidation.
- the gas flow rate was adjusted in the range of 0.0002 to 0.004 m 3 / min and used for temperature control in the furnace.
- the timing of heat treatment was classified into three types: primary annealing immediately after the plating layer was formed, intermediate annealing in the middle of wire drawing, and finish annealing at the final diameter, and these heat treatments were appropriately combined.
- wires with a wire diameter of 0.5-6 mm were annealed in batch mode, for intermediate annealing, wires with a wire diameter of 0.06-1 mm were annealed continuously, and for final annealing, wires with a final wire diameter were annealed in a continuous manner.
- inert gas melting thermal conductivity method Two methods were used to measure hydrogen concentration: inert gas melting thermal conductivity method and TDS analysis.
- the former inert gas melting thermal conductivity method uses LECO model RH402
- the latter TDS analysis uses an Anelva quadrupole mass spectrometer M-100-QA-M or M -201-QA-TDM was used.
- the hydrogen concentration was analyzed while separating diffusible hydrogen and hydride, the latter apparatus was mainly used.
- the amount of hydrogen released was measured for each temperature while heating the sample from 0 to 900 ° C. at a rate of 200 ° C./h.
- the hydrogen concentration detected at a temperature of 100 to 900 ° C. is defined as the total hydrogen concentration.
- the ratio of the hydrogen concentration detected at a temperature of 100 to 500 ° C. to the total hydrogen concentration was determined.
- the pumping speed of the vacuum pump of the measuring device was 2400 to 300 liters / min (N 2 gas conversion).
- Depth analysis by AES was used to measure the film thickness on the wire surface, and surface analysis and line analysis by AES, EPMA, etc. were performed to observe element distribution, such as enrichment of grain boundaries.
- depth analysis by AES measurement was performed in the depth direction while sputtering with Ar ions, and the unit of depth was displayed in terms of SiO 2 .
- the concentration of the alloy element in the bonding wire was measured by ICP analysis or the like.
- the average value of the concentration obtained by the analysis method using EPMA, EDX, AES was used at five or more points in the longitudinal section passing through the center of the wire.
- concentration gradient of the surface concentrated layer and the intermediate layer it is expressed as A if the average gradient gradient is 30 mol% or more per 1 ⁇ m, B if it is 10 mol% or more and less than 30 mol%, and C if it is less than 10 mol%. 3. “Surface concentration layer gradient” and “intermediate layer gradient” are shown in column 3.
- a commercially available automatic wire bonder was used to perform ball / wedge bonding.
- a ball portion was produced at the tip of the wire by arc discharge, it was joined to the electrode film on the silicon substrate, and the other end of the wire was wedge joined to the lead terminal.
- the standard 5 vol% H 2 + N 2 gas and pure N 2 gas were used as the shielding gas to suppress oxidation during ball formation.
- pure N 2 gas with a purity of 5N or higher was basically used. The gas flow rate was adjusted in the range of 0.0003 to 0.005 m 3 / min.
- Al alloy film Al-1 mass% Si-0.5 mass% Cu film, Al-0.5 mass% Cu film
- a lead frame whose surface was Ag-plated (thickness: 1 to 4 ⁇ m) or a resin substrate having an electrode structure of Au plating / Ni plating / Cu was used as a partner for wedge bonding.
- the workability of the bonding wire was evaluated by the number of breaks in the process of drawing from a thick wire having a wire diameter of 500 ⁇ m to 22 ⁇ m or 18 ⁇ m.
- the sample length was 5000 m when the wire diameter was 500 ⁇ m.
- the wire was drawn at a speed twice that of the normal drawing speed. If the number of disconnections is 0, very high productivity is expected. ⁇ , if it is 1 to 2 times, normal productivity is judged to be good. ⁇ , 3 to 6 times. If there is a slight change in the wire drawing conditions, it is necessary to make a slight change. .
- the bonding shape of the pressure-bonded ball portion was evaluated according to the same criteria as described above for a large-sized ball portion having a wire diameter of 20 ⁇ m and an initial ball diameter / wire diameter ratio of 3.0 to 3.5.
- the "Large ball deformability" column In the "Large ball deformability" column.
- the ball bonding strength For the evaluation of the ball bonding strength, a sample bonded at a stage temperature of 175 ° C. was used so that the wire diameter was 23 ⁇ m and the ball diameter was in the range of 45 to 60 ⁇ m. Two types of wires were used as the evaluated bonding wires, with a period from production to bonding of 30 days and 120 days. A shear test of 20 ball joints was performed, the average value of the shear strength was measured, and the shear strength per unit area calculated using the average value of the area of the ball joint was used. If the shear strength per unit area is less than 70MPa, the bonding strength is insufficient.
- the shear strength is less than 70MPa, it can be improved by slightly changing the joining condition if it is in the range of 70MPa to less than 90MPa. If it is within the range, it is judged that there is no problem in practical use, and since it is good if it is in the range of 110 MPa or more, it is indicated in the column of “Share strength” in Table 2 because it is good.
- the ball part was bonded onto the electrode film, the electrode film was removed by etching, and the damage to the insulating film or the silicon chip was observed by SEM. 400 electrodes were observed. If no damage is found, ⁇ , if there are 2 or less cracks less than 5 ⁇ m, it is judged that there is no problem, ⁇ mark, if there are 2 or more cracks of 5 ⁇ m or more but less than 20 ⁇ m, it is judged as a level of concern In the case of 1 or more cracks or crater breakage of 20 ⁇ m or more, it was judged as a level of concern, and indicated by “ ⁇ ” in the “Chip Damage” column of Table 2.
- Wedge bondability is a non-stick failure when bonding wires are bonded to lead electrodes. failure).
- Two types of bonding wires were used: the initial state of storage after production within 7 days and the case of leaving in the atmosphere at room temperature for 60 days. The bonding wire was stored in a clean room in a spool case. Under the bonding conditions, the ultrasonic power was slightly reduced to induce non-adherence. The stage temperature was set at a low temperature of 160 ° C. to accelerate defects in the initial bonding wire, and 175 ° C. in the evaluation of the bonding wire left for 60 days. The frequency of non-sticking was evaluated by 2000 bonding.
- trapezoidal loops were prepared with two types of general-purpose spans with a wire length of 2 mm and short spans of 0.5 mm, and 500 bonding wires were observed with a projector. Linearity, loop height variation, etc. were judged. Formation of trapezoidal loops with a short wire length of 0.5 mm requires tighter loop control to avoid contact with the tip end. If the wire length is 2mm and there are 5 or more defects such as linearity and loop height, it is judged that there is a problem and is indicated by x, the wire length is 2mm, 2 to 4 defects, and the wire length is 0.5.
- the number of defects is 5 or more in mm, it is judged that improvement is necessary, and it is marked with ⁇ . If the wire length is 2 mm and the number of defects is 1 or less, and the wire length is 2 mm and the number of defects is 2 to 4, Since the loop shape is relatively good, it is indicated by a circle, and when the wire length is 0.5 mm and the number of defects is 1 or less, the loop shape is judged to be stable. "In the column. As one of the causes of defects, the adhesion between the interface between the core material and the outer peripheral portion is not sufficient, and characteristic variations in the cross section are assumed.
- the first pull test which is a method of pulling the hook upward in the vicinity of the ball joint, was performed. It was confirmed that it was broken at the neck. Since the first pull strength depends on the wire diameter, loop shape, bonding conditions, etc. of the bonding wire, the first pull strength / wire tensile strength relative ratio (Rf) was used instead of the absolute value. If the Rf value is 60% or more, it is excellent because it is excellent, and if it is in the range of 50% or more and less than 60%, it is good. ⁇ mark, if less than 40%, the neck strength is insufficient and needs to be improved. X mark in Table 2 “Pull Strength” column. did.
- peel joint strength For the evaluation of peel joint strength, a pull test of a wedge joint was used. The wire diameter was 23 ⁇ m and the span was 2 mm. This was a second pull test in which the hook hooked on the loop was moved upward at a position closer to the wedge joint than 3/4 of the wire length, and the breaking strength of the bonding wire was measured. Since the second pull strength depends on the wire diameter, loop shape, bonding conditions, etc. of the bonding wire, the relative ratio (Rp) of the second pull strength / wire tensile strength was used instead of the absolute value. If the Rp is 20% or more, the wedge bondability is good, and it is judged that there is no problem if it is marked ⁇ , 15% or more and less than 20%. If it is judged that there is a ⁇ mark, if less than 10%, there is a problem in the mass production process.
- leaning failure which is a phenomenon in which the wire upright near the ball joint collapses, observe the wire upright from the chip horizontal direction, and the distance between the perpendicular passing through the center of the ball joint and the wire upright is the largest. Evaluation was made at certain intervals (leaning intervals). The wire length was 3 mm and the number of samples was 50. A sample having a maximum loop height of about 400 ⁇ m, which is a strict high loop, was prepared for leaning evaluation. When the above-described leaning interval was smaller than the wire diameter, the leaning was good. They are classified according to the frequency of occurrence of defects in leaning, and are marked in the “leaning” column of Table 2 with ⁇ marks when there are three or more defects, ⁇ marks when there are zero defects, and ⁇ marks between them.
- the ball portion is bonded to the electrode film on the silicon substrate to form a bump, the ball portion is ball bonded to the lead electrode, the loop shape is controlled, and the other end of the wire is connected.
- a wedge was bonded onto the bump.
- Two types of chips were used: a monochip type, which is a case of a normal one-stage chip, and an overhang type in which two chips are stacked and the space under the chip is a space.
- the chip height was 200 ⁇ m.
- 2000 wire connections with a wire diameter of 20 ⁇ m were made, and the number of non-stick defects of wedge bonding on the bumps was evaluated.
- the load and ultrasonic vibration were set slightly lower than the mass production conditions in the evaluation of non-sticking failure. If the number of non-sticking defects is 6 times or more, the bonding is insufficient, so that it is marked with ⁇ , if it is 3-5 times, it is marked with ⁇ , and if it is 1-2 times, it is practical by optimizing the joining conditions. Since it was judged that there was a circle, the bonding strength was sufficient if there was no peeling, so that it was marked in the column of “Continuous Joining of Reverse Bonding” in Table 4 with ⁇ .
- the hook was moved upward at a position closer to the wedge joint than 3/4 of the wire length, and the breaking strength of the bonding wire was measured.
- a relative ratio (Rp) of second pull strength / wire tensile strength was used. If the Rp is 20% or more, the wedge bondability is good, and it is judged that there is no problem if it is marked ⁇ , 15% or more and less than 20%. If it is judged that there is a ⁇ mark, if it is less than 10%, there is a problem in the mass production process. Therefore, a mark “X” is shown in the column “Second pull strength of reverse bonding” in Table 3.
- the leaning property of the reverse bonding connection was evaluated by observing the wire upright part from the chip horizontal direction and measuring the distance (leaning interval) when the distance between the vertical line passing through the center of the ball joint and the wire upright part is the maximum.
- the wire length was 3 mm and the number of samples was 300.
- the leaning interval was smaller than the wire diameter, the leaning was good, and when the leaning interval was large, the upright part was inclined, so that the leaning was judged to be bad.
- the loop shape is determined to be stable, and displayed as ⁇ , and if there is only one location where the variation is large, Since it is good, it is indicated by “ ⁇ ” in the case of two places, “ ⁇ ” in the case of two places, and “ ⁇ ” if there is large variation in both places, and is shown in the column of “Long span Wrinkled-Loop defect” in Table 4.
- the aluminum splash phenomenon with narrow pitch connection was evaluated by the degree of aluminum swept around the ball joint in the direction of ultrasonic application.
- a sample in which 200 50 ⁇ m pitch connections with a wire diameter of 20 ⁇ m and 200 40 ⁇ m pitch connections with a wire diameter of 18 ⁇ m were connected was used. If the number of aluminum splashes is remarkable is 3 or more, it needs to be improved.
- ⁇ mark if there are 2 or less remarkable aluminum sweeps and 6 or more medium aluminum sweeps, ⁇ mark. In case of 2 to 5 medium aluminum sweeps, it is marked with ⁇ , and if it is 1 or less, it is good, so it is marked with ⁇ and in the column of “Alsplash with narrow pitch connection” in Table 4. .
- the hook hooked on the loop was moved upward at a position closer to the wedge joint than 3/4 of the wire length, and the breaking strength of the wire was measured.
- the relative ratio (Rp) of pull strength / wire tensile strength was used.
- the wire diameter was 20 ⁇ m and the wire length was 3 mm.
- the wedge bondability is good, so if it is ⁇ , if it is 30% or more and less than 40%, it is judged that there is no problem, ⁇ mark, if it is 25% or more and less than 30%, a problem occurs If it is judged that there is a ⁇ mark, if it is less than 25%, there is a problem in the mass production process, so it is indicated by a “X” mark in the “Second pull strength of QFN mounting” column in Table 4.
- the resin-sealed sample after bonding was heated at a temperature of 185 ° C. for 1500 hours, 2000 hours, and 2500 hours, respectively, and then the electrical characteristics of 60 bonding wires were evaluated. If the ratio of bonding wire whose electrical resistance has increased to 3 times or more of the initial value is 30% or more, it is marked as x because of bonding failure, and the ratio of bonding wire whose electrical resistance has increased to 3 times or more is 5% or more and less than 30%.
- the range it can be used for ICs whose reliability requirements are not strict, so the proportion of bonding wires whose electrical resistance has increased by more than 3 times is less than 5% and bonding wires whose electrical resistance has increased by more than 1.5 times If the ratio is 10% or more and less than 30%, there is no problem in practical use.So, if the ratio of bonding wire whose electrical resistance has increased 1.5 times or more is less than 10%, it is good. This is shown in the column of “High temperature reliability” in 4.
- Tables 1 to 4 show evaluation results and comparative examples of semiconductor elements connected with bonding wires according to the present invention.
- the bonding wires according to the first claim are Examples 1 to 21, 51 to 72
- the bonding wires according to the second claim are Examples 1 to 10, 14 to 16, 18 to 20, 51 to 57, 60 to 67, 69 to 72
- the bonding wires according to the third claim are Examples 1 to 21, 51 to 72
- the bonding wires according to the fourth claim are Examples 1 to 4, 6 to 9, 11 to 17, 19, 20, 51 to 58, 60 to 67, 69 to 72
- the bonding wires according to the fifth claim are Examples 1 to 14, 16, 17, 19 to 21, 51 to 56, 61 to 67, 69 to 71
- the bonding wires according to the tenth claim are Examples 51 to 60
- the bonding wires according to the eleventh claim are Examples 51 to 60
- the bonding wires according to the twelfth claim are Examples 52 to 58, 60.
- the bonding wires according to claim 13 are Examples 51 to 57, 60
- the bonding wires according to claim 14 are Examples 51 to 58, 60
- the bonding wires according to claim 15 are Examples 61 to 70, 16th.
- the bonding wires according to claims are Examples 61 to 70
- the bonding wires according to claim 17 are Examples 62, 63, 65 to 67, 69, 70
- the bonding wires according to claim 18 are Examples 61 and 63.
- the bonding wire according to claim 19 is the embodiment 62 to 70
- the bonding wire according to the 20th claim is the embodiment 51 to 54
- the bonding wire according to the 21st claim is Equivalent to Examples 52-60, 62-64, 66-70 That. Comparative examples 51 to 56 show the results when the first claim is not satisfied.
- the multilayer wires of Examples 1 to 21 and 50 to 72 are formed on the surface of the core material according to the present invention, the core material mainly containing any one element of Cu, Au, and Ag. And the outer layer mainly composed of Pd, and the total hydrogen concentration contained in the entire wire is in the range of 0.0001 to 0.008 mass%. It was confirmed that both characteristics were satisfactory, with few wire breaks and good wire workability. On the other hand, in Comparative Examples 1, 51, 54, and Comparative Examples 2-4, 52, and 55 where the hydrogen concentration is less than 0.0001 mass%, it is difficult to achieve both ball shape and wire workability. It was.
- Comparative Example 5 in which the outer layer is Au
- Comparative Example 53 in which Pt is used
- Comparative Example 56 in which Ni is used
- Comparative Example 6 in which the core material is Pt
- a single-layer copper wire having no outer layer have wire workability. It was confirmed that it was insufficient.
- Examples 1 to 10, 14 to 16, 18 to 20, 51 to 57, 60 to 67, and 69 to 72 in which the hydrogen concentration is in the range of 0.0001 to 0.004 mass% generation of minute holes on the side surface of the ball It has been confirmed that the effect of suppressing is high. More preferably, in Examples 1 to 8, 14 to 16, 19, 20, 51 to 55, 60 to 65, and 69 to 72 in which the hydrogen concentration is in the range of 0.0001 to 0.002 mass%, an ultrafine wire having a wire diameter of 23 ⁇ m is used.
- the multilayer wires of Examples 1 to 4, 6 to 9, 11 to 17, 19, 20, 51 to 58, 60 to 67, and 69 to 72 have a heating rate of 100 to 300 ° C./h according to the present invention. Bonding wire with a wire diameter of 23 ⁇ m because the ratio of the hydrogen concentration detected in the temperature range of 150 to 500 ° C to the total hydrogen concentration detected in the temperature range of TDS analysis measured at 50% or more is 50% or more. It was confirmed that the roundness of the ball press-fit shape in can be improved.
- the wire diameter A high effect of improving the roundness of the ball press-bonded shape in the case of 18 ⁇ m was confirmed.
- the multilayer wires of Examples 1 to 14, 16, 17, 19 to 21, and 71 have a thickness of the outer layer in the range of 0.01 to 0.2 ⁇ m according to the present invention. It was confirmed that wedge bondability could be improved. In contrast, in Example 18 in which the thickness of the outer layer exceeds 0.2 ⁇ m, chip damage has occurred. Preferably, in Examples 2, 4 to 7, 9, 10, 14, 16, 19, 20, 71, 72 in which the outer layer thickness is in the range of 0.02 to 0.095 ⁇ m, the shear strength of the ball joint can be increased. Was confirmed.
- the thickness of the region where the Pd concentration is in the range of 80 mol% in the outer layer is 0.003 to 0.08 ⁇ m according to the present invention.
- the effect of increasing the pull strength was confirmed.
- the multilayer wires of Examples 1 to 11, 13, 14, and 16 to 20 have a diffusion layer having a concentration gradient between the outer layer and the core material according to the present invention, and the thickness of the diffusion layer is 0.003 to By using 0.15 ⁇ m, the loop linearity with a normal wire length of 2 mm was improved. On the other hand, in Examples 12 and 21 in which the thickness of the diffusion layer was more than 0.15 ⁇ m, it was confirmed that the wedge bondability was lowered.
- the wire length is 5 mm, which is a long span that requires strict control, and the loop straight line A higher effect of further improving the sex was confirmed.
- the multilayer wires of Examples 2, 5, 6, 11, and 13 include Cu as the main component of the core material according to the present invention, and one or more alloy elements of Al, Sn, Zn, B, and P. It has been confirmed that the leaning property can be improved when the alloy element concentration in the whole wire is in the range of 0.0001 to 0.05 mol% in total. On the other hand, it was confirmed that in Example 14 in which the concentration was more than 0.05 mol%, the peel bonding strength was lowered.
- the multilayer wires of Examples 4, 8, 10, 16, and 18 are core materials in which the main component of the core material is Cu or Au and contains one or more elements of Pd, Ag, and Pt according to the present invention. It was confirmed that the PCT reliability can be improved when the element concentration in the total is in the range of 0.01 to 2 mol%. On the other hand, in Example 21 in which the concentration exceeds 2 mol%, a problem of increasing chip damage was confirmed.
- the multilayer wires of Examples 51 to 60 are core materials mainly composed of Cu according to the present invention, and one or more of Ag and Au on the surface side of the outer layer mainly composed of Pd on the core material.
- the total hydrogen concentration contained in the entire wire is in the range of 0.0001 to 0.008 mass%, so that the second bondability of the wire left for 90 days is good. It was confirmed that the continuous bondability was good.
- the comparative examples 51 and 52 in which the hydrogen concentration is out of the range, the comparative example 53 in which the concentrated layer is Rh the hydrogen concentration is in the range but the concentrated In Examples 61 to 72 having no layer, the above improvement effect was confirmed to be insufficient.
- the concentrated layer according to the present invention has good second pull strength in QFN mounting because the concentrated layer has a concentration gradient of one or more of Ag and Au. confirmed.
- the Pd concentration on the outermost surface of the concentrated layer is in the range of 20 to 90 mol%, so that the Wrinkled Loop defect related to the loop shape in the long span It was confirmed that On the other hand, in Examples 51 and 59 in which the Pd concentration on the outermost surface is less than 20 mol% or more than 90 mol%, Wrinkled Loop failure was not improved. Preferably, in Examples 53 to 58 in which the Pd concentration is in the range of 30 to 80 mol%, a higher effect of further improving the Wrinkled Loop defect was confirmed.
- the multilayered wires of Examples 51 to 58 and 60 have a wedge bondability after 90 days storage and a QFN, because the thickness of the outer layer having the concentrated layer according to the present invention is in the range of 0.02 to 0.4 ⁇ m. It was confirmed that it is possible to improve both the bonding property of the mounting and reduce the chip damage. On the other hand, in Example 59, it was confirmed that chip damage occurred because the thickness of the outer layer exceeded 0.4 ⁇ m.
- the pull strength of the QFN mounting at low temperature is improved, and more preferably in the range of 0.04 to 0.25 ⁇ m.
- 51, 54-56, and 60 a high effect of further improving the pull strength of QFN mounting at low temperature was confirmed.
- the multilayer wires of Examples 61 to 70 are core materials mainly composed of Cu according to the present invention, an outer layer mainly composed of Pd on the core material, and Ag, Au between the core material and the outer layer. One or more of them have a thickened intermediate layer, and the total hydrogen concentration contained in the entire wire is in the range of 0.0001 to 0.008 mass%. It was confirmed that the shear strength was good.
- the intermediate layer according to the present invention has a leaning property of reverse bonding mounting because the intermediate layer has a concentration gradient of one or more of Ag and Au. did.
- the average gradient of the concentration gradient is 20 mol% or more per 1 ⁇ m, a higher effect of improving the leaning property was confirmed.
- the multi-layer wires of Examples 62, 63, 65 to 67, 69, and 70 are reverse bonded because the maximum concentration of Ag and Au in the intermediate layer according to the present invention is in the range of 30 to 90 mol%. It was confirmed that the continuous bondability of wedge bonding on the bumps of the mounting was improved.
- the multilayer wires of Examples 61, 63, and 68 are reverse bonded according to the present invention, because the intermediate layer has a coexistence region of one or more of Ag and Au and a concentration gradient of three elements of Pd and Cu. It was confirmed that the first pull strength of the mounting was improved.
- the multi-layered wires of Examples 61 to 70 have a second pull strength in the monochip reverse bonding mounting because the total thickness of the outer layer and the intermediate layer is in the range of 0.02 to 0.5 ⁇ m according to the present invention.
- the thickness is in the range of 0.07 to 0.4 ⁇ m
- a higher effect of improving the second pull strength in the monochip type was confirmed.
- Examples 63, 65, 66, 68 and 69 in which the thickness is in the range of 0.13 to 0.30 ⁇ m a high effect of improving the second pull strength in the overhang type laminated chip was confirmed.
- the multilayer wires of Examples 51 to 54, 56 to 64, and 66 to 70 are composed of at least one of a surface concentrated layer or an intermediate layer, an outer layer, and a core material according to the present invention, and Pd, Ag, When the total concentration of Au is in the range of 0.4 to 4 mol%, the effect of reducing the Al splash at the ball joint in the 50 ⁇ m pitch connection was confirmed.
- Examples 51, 53, 54, 56, 58, 59, 62-64, 66-70 in the range of 0.5-3 mol% Al splash at 40 ⁇ m pitch connection is reduced, more preferably In Examples 51, 54, 56, 59, 62 to 64, 66, 67, 69, and 70 in the range of 0.7 to 2.7 mol%, a higher effect of reducing the Al splash at 40 ⁇ m pitch connection was confirmed.
- the total concentration of Pd, Ag, and Au described above according to the present invention is in the range of 0.4 to 4 mol%, and Ag with respect to the Pd concentration, It was confirmed that the decrease in bonding strength can be suppressed even by heating at 185 ° C for 1500 hours, which is the high-temperature reliability for next-generation in-vehicle ICs, because the total concentration ratio R of Au ranges from 0.001 to 0.4.
- Examples 52 to 60, 63, 64, 66, 68, 69, and 70 in which the concentration ratio R is in the range of 0.002 to 0.3 it is more preferable that the bonding reliability is good up to 2000 h at 185 ° C.
- Examples 53 to 58, 60, 63, 64, 66, 69, and 70 in which the concentration ratio R is in the range of 0.01 to 0.25 it is good up to 2500 h at 185 ° C., which improves the high temperature bonding reliability. High effect was confirmed.
- core 2 outer layer 3: Diffusion layer 4: Surface concentrated layer 5: Single metal layer inside outer layer 6: Middle layer 7: Total thickness of outer and intermediate layers 8: Concentration gradient with 3 or more elements mixed A: Main component of outer layer B: Main component of core material C: Main component of surface thickening layer D: Main component of the intermediate layer
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Abstract
Description
Packaging)等の新しい形態が実用化され、ループ性、接合性、量産使用性等をより向上したボンディングワイヤが求められている。そうしたボンディングワイヤの接続技術でも、現在主流のボール/ウェッジ接合の他に、狭ピッチ化に適したウェッジ/ウェッジ接合では、2ヶ所の部位で直接ボンディングワイヤを接合するため、細線の接合性の向上が求められる。
Spectrometry: TDS)により測定した前記ワイヤ全体に含まれる水素濃度であることを特徴とする。
failure)の回数で評価した。ボンディングワイヤは製造後の保管が7日以内の初期状態と、常温で大気中に60日間放置したときの2種類を使用した。ボンディングワイヤは、スプールケースに入れた状態でクリーンルーム内に保管した。接合条件では、超音波出力を少し減らして不着を誘発した。ステージ温度について、初期状態のボンディングワイヤでは不良を加速するため160℃の低温、60日放置したボンディングワイヤの評価では175℃とした。2000本のボンディングにより不着発生頻度を評価した。不着数が6本以上の場合は改善が必要であるため×印、3~5本の場合には△印、1又は2本の場合にはほぼ良好であるため○印、不着がゼロの場合にはワイヤ保管寿命が良好であると判断して◎印で、表2中の「ウェッジ接合性」の欄に表示した。
Loop不良は改善されていなかった。好ましくは、前記Pd濃度が30~80mol%の範囲である実施例53~58では、Wrinkled Loop不良をさらに改善するより高い効果が確認された。
2: 外層
3: 拡散層
4: 表面濃化層
5: 外層内部の単一金属層
6: 中間層
7: 外層と中間層を総計した厚さ
8: 3元素以上が混在する濃度勾配
A: 外層の主成分
B: 芯材の主成分
C: 表面濃化層の主成分
D: 中間層の主成分
Claims (21)
- Cu、Au、Agの1種以上の元素を主成分とする芯材と、前記芯材の上にPdを主成分とする外層とを有する半導体用ボンディングワイヤであって、前記ワイヤ全体に含まれる総計の水素濃度が0.0001~0.008mass%の範囲であることを特徴とする半導体用ボンディングワイヤ。
- 前記水素濃度が0.0001~0.004mass%の範囲であることを特徴とする請求項1に記載の半導体用ボンディングワイヤ。
- 前記水素濃度が、昇温脱離ガス分析(Thermal
Desorption Spectrometry: TDS)により測定した前記ボンディングワイヤに含まれる水素濃度であることを特徴とする請求項1又は2に記載の半導体用ボンディングワイヤ。 - 前記水素濃度の内、100~300℃/hの昇温速度で測定される昇温脱離ガス分析において、150~500℃の温度範囲で検出される水素濃度の全測定温度範囲で検出される総計の水素濃度に対する比率が50%以上であることを特徴とする請求項1~3のいずれか1項に記載の半導体用ボンディングワイヤ。
- 前記外層の厚さが0.01~0.2μmの範囲であることを特徴とする請求項1~4のいずれか1項に記載の半導体用ボンディングワイヤ。
- 前記外層内において、金属系元素の総計に対するPd濃度が80mol%以上の範囲である領域の厚さが0.003~0.08μmであることを特徴とする請求項1~5のいずれか1項に記載の半導体用ボンディングワイヤ。
- 前記外層と芯材の間に濃度勾配を有する拡散層を有し、前記拡散層の厚さが0.003~0.15μmであることを特徴とする請求項1~6のいずれか1項に記載の半導体用ボンディングワイヤ。
- 前記芯材の主成分がCu又はAuで、Pd、Ag、Ptの1種以上の元素を含有し、芯材に占める該元素濃度の総計が総計で0.01~2mol%の範囲であることを特徴とする請求項1~7のいずれか1項に記載の半導体用ボンディングワイヤ。
- 前記芯材の主成分がCuで、Al、Sn、Zn、B、Pの1種以上の合金元素を含有し、ワイヤ全体に占める該合金元素濃度が総計で0.0001~0.05mol%の範囲であることを特徴とする請求項1~8のいずれか1項に記載の半導体用ボンディングワイヤ。
- 前記芯材がCuを主成分とし、前記外層の表面側にAg、Auのうち1種以上の濃化層を有することを特徴とする請求項1に記載の半導体用ボンディングワイヤ。
- 前記濃化層がAg、Auのうち1種以上の濃度勾配をワイヤ径方向に有するものであることを特徴とする請求項10に記載の半導体用ボンディングワイヤ。
- 前記濃化層の最表面におけるPd濃度が20~90mol%の範囲であることを特徴とする請求項10に記載の半導体用ボンディングワイヤ。
- 前記外層の内部にPd単一金属層を有することを特徴とする請求項10に記載の半導体用ボンディングワイヤ。
- 前記濃化層を有する外層の厚さが0.02~0.4μmの範囲であることを特徴とする請求項10に記載の半導体用ボンディングワイヤ。
- 前記芯材がCuを主成分とし、前記芯材と前記外層との間にAg、Auのうち1種以上が濃化した中間層を有することを特徴とする請求項1記載の半導体用ボンディングワイヤ。
- 前記中間層がAg、Auのうち1種以上の濃度勾配をワイヤ径方向に有するものであることを特徴とする請求項15に記載の半導体用ボンディングワイヤ。
- 前記中間層におけるAg、Auを総計した最高濃度が30~90mol%の範囲であることを特徴とする請求項15に記載の半導体用ボンディングワイヤ。
- 前記中間層が、Ag、Auのうち1種以上の元素とPdとCuとが共存し、かつ該3元素の濃度勾配をワイヤ径方向に有する領域を含むものであることを特徴とする請求項16に記載の半導体用ボンディングワイヤ。
- 前記外層と前記中間層を総計した厚さが0.02~0.5μmの範囲であることを特徴とする請求項15に記載の半導体用ボンディングワイヤ。
- Pd、Ag、Auを総計した濃度が0.4~4mol%の範囲であることを特徴とする請求項10又は15に記載の半導体用ボンディングワイヤ。
- Pd濃度に対するAg、Auを総計した濃度の比率が0.001~0.4の範囲であることを特徴とする請求項10又は15に記載の半導体用ボンディングワイヤ。
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US12/993,401 US8815019B2 (en) | 2009-03-17 | 2010-02-12 | Bonding wire for semiconductor |
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US8815019B2 (en) | 2014-08-26 |
CN101925992B (zh) | 2012-08-22 |
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