JP2013139635A - 合金線材およびその製造方法 - Google Patents
合金線材およびその製造方法 Download PDFInfo
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- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
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Abstract
【解決手段】銀−金合金、銀−パラジウム合金および銀−金−パラジウム合金よりなる群のうちの1つから選ばれる材料からなる合金線材を提供する。当該合金線材は、面心立方格子の多結晶構造を持つもので、複数の結晶粒を含む。合金線材の中心部は細長い結晶粒または等軸結晶粒を含み、合金線材のその他の部分は等軸結晶粒からなる。焼なまし双晶を有する結晶粒の数量は合金線材の結晶粒の総量の20パーセント以上である。
【選択図】図1B
Description
本出願は、2012年1月2日に出願された台湾特許出願第101100014号の優先権を主張し、その全体が参照することにより本明細書に組み込まれる。
twins)16を含む結晶粒の数量は、合金線材10の結晶粒の総量の20パーセント以上である。上記した等軸結晶粒12に加え、合金線材10の中心部にはいくらかの細長い結晶粒18が存在し得る。
boundaries)に属するコヒーレント結晶(coherent crystal)構造である。双晶境界の界面エネルギーは一般の大傾角粒界のわずか5パーセントである(George E. Dieter, Mechanical Metallurgy, McGRAW-HILL Book Company,
1976, P. 135-141参照)。双晶境界のより低い界面エネルギーは、双晶境界が酸化、硫化および塩化物イオンの腐食の経路となってしまうのを防ぎ、よってより優れた抗酸化活性および耐腐食性を提供する。さらに、焼なまし双晶の対称な格子配列は、電子の輸送に対し妨げになることがほとんどないため、より優れた導電性および熱伝導性を提供する。かかる効果は、パルス電着(pulsed electrodeposited)銅箔において証明されている(L. Lu,
Y. Shen, X. Chen, L. Qian, and K. Lu, Ultrahigh Strength and High Electrical
Conductivity in Copper, Science, vol. 304, 2004, p. 422-426参照)。
of Atomic Diffusion at Twin-Modified Grain Boundaries in Copper, Science, vol.
321, 2008, p. 1066-1069参照)。
焼なまし双晶組織を含む結晶粒の数量は、従来の線材の全ての結晶粒の10パーセント以下である。よって、従来の金属線材は、本発明の合金線材により提供される上述の効果を提供することができない。
Mechanical Metallurgy, McGRAW-HILL Book Company, 1976, P. 135-141.およびR.W. Cahn, Physical Metallurgy, 1970, P.1184-1185参照)、冷間加工時に材料に歪みエネルギーが蓄積され、結晶粒中の一部領域における原子がこの歪みエネルギーに駆動されて、これら原子の存する結晶粒内におけるせん断されていない原子と鏡面対称を形成する格子の位置まで均一にせん断される。
drawing)工程、押出(extrusion)工程またはこれらの組み合わせであることが好ましい。
銀−8wt%・金−3wt%・パラジウム合金を高周波電気製錬(high
frequency electric smelting)により製錬してから、連続鋳造により線径6mmの太線材を形成する。その太線材は、複数の伸線・延伸(wire drawing elongation)および焼きなまし処理の工程の後に、線径22.6μmの細線材となり、続いて最後から2番目の伸線・延伸工程を行うことにより、線径20μmの細線材となる。次にその細線材を530℃で1.5秒間焼きなましてから、最後の伸線・延伸工程を行うことで、線径17.5μmの細線材になる。最後に、最後の焼きなまし処理の工程を焼きなまし温度570℃で4.8秒間、細線材に対して行う。最後の焼きなまし処理の工程が完了したら、細線材を巻き取り、そしてワイヤボンディングに用いる合金線材製品が完成する。
structure)の写真は、本発明の合金線材の中心部にいくらかの細長い結晶粒が存在し、本発明の合金線材のその他の部分は等軸結晶粒からなっていたことを示しており、焼なまし双晶を含む結晶粒の数量は、本発明の合金線材の結晶粒の総量の30パーセントよりも多かった。
Microelectronics, National Institute of Standards and Technology, 1991 by
International Society for Hybrid Microelectronics参照)。
銀−8wt%・金−3wt%・パラジウム合金を高周波電気製錬(high
frequency electric smelting)により製錬してから、連続鋳造により線径6mmの太線材を形成する。その太線材は、複数の伸線・延伸(wire drawing elongation)および焼きなまし処理の工程の後に、線径22.6μmの細線材となり、続いて最後から2番目の伸線・延伸工程を行うことにより、線径20μmの細線材となる。次にその細線材を650℃で10秒間焼きなましてから、最後の伸線・延伸工程を行うことで、線径17.5μmの細線材になる。最後に、最後の焼きなまし処理の工程を焼きなまし温度700℃で60秒間、細線材に対して行う。最後の焼きなまし処理の工程が完了したら、細線材を巻き取り、そしてワイヤボンディングに用いる合金線材製品が完成する。
12…等軸結晶粒
14…大傾角粒界
16…焼なまし双晶
18…細長い結晶粒
20…合金線材
21…基材線材
22…等軸結晶粒
24…大傾角粒界
25…金属コーティング
26…焼なまし双晶
28…細長い結晶粒
102…工程
103…工程
104…工程
106…工程
108…工程
202…鋳造工程
204…冷間加工工程
302…連続鋳造工程
Claims (19)
- 銀−金合金、銀−パラジウム合金および銀−金−パラジウム合金よりなる群のうちの1つから選ばれる材料からなる合金線材であって、
前記合金線材が面心立方格子(face-centered cubic lattice)の多結晶構造を有するもので、かつ複数の結晶粒を含み、
前記合金線材の中心部は細長い結晶粒または等軸結晶粒を含み、前記合金線材のその他の部分は等軸結晶粒からなり、
焼なまし双晶(annealing twins)を含む前記結晶粒の数量が前記合金線材の前記結晶粒の総量の20パーセント以上である
合金線材。 - 前記銀−金合金が0.01から30.00重量パーセントの金および残余の銀を含み、
前記銀−パラジウム合金が0.01から10.00重量パーセントのパラジウムおよび残余の銀を含み、
前記銀−金−パラジウム合金が0.01から30.00重量パーセントの金、0.01から10.00重量パーセントのパラジウムおよび残余の銀を含む
請求項1に記載の合金線材。 - 前記合金線材の線径が10μmから50μmである請求項1に記載の合金線材。
- 前記合金線材の線径が10μmから50μmである請求項2に記載の合金線材。
- 銀−金合金、銀−パラジウム合金および銀−金−パラジウム合金よりなる群のうちの1つから選ばれる材料からなる基材線材(base wire)であって、前記基材線材が面心立方晶相の多結晶構造を有すると共に複数の結晶粒を含み、前記基材線材の中心部は細長い結晶粒または等軸結晶粒を含み、前記基材線材のその他の部分は等軸結晶粒からなり、焼なまし双晶を含む前記結晶粒の数量は前記基材線材の前記結晶粒の総量の20パーセント以上である、基材線材と、
前記基材線材の上にメッキされる1または複数層の金属コーティングであって、前記金属コーティングが実質上の純金、実質上の純パラジウムおよび金−パラジウム合金よりなる群のうちの1つから選ばれる材料からなる、金属コーティングと、
を含む合金線材。 - 前記銀−金合金が0.01から30.00重量パーセントの金および残余の銀を含み、
前記銀−パラジウム合金が0.01から10.00重量パーセントのパラジウムおよび残余の銀を含み、
前記銀−金−パラジウム合金が0.01から30.00重量パーセントの金、0.01から10.00重量パーセントのパラジウムおよび残余の銀を含む
請求項5に記載の合金線材。 - 前記合金線材の線径が10μmから50μmである請求項5に記載の合金線材。
- 前記合金線材の線径が10μmから50μmである請求項6に記載の合金線材。
- 前記金属コーティングが0.1μmから5μmの厚さである請求項5に記載の合金線材。
- 合金線材の製造方法であって、
銀−金合金、銀−パラジウム合金および銀−金−パラジウム合金よりなる群のうちの1つから選ばれる材料で作られた太線材を準備する工程、
N個の冷間加工成形工程により、前記太線材の線径を段階的に小さくして前記太線材よりも線径の小さい細線材を形成する工程であって、第(N−1)番目および第N番目の前記冷間加工成形工程のそれぞれにおいて、その直前の冷間加工成形工程による中間線材に対し変形量が1%から15%であり、このうちNは3以上の正の整数である、工程、ならびに
各前記冷間加工成形工程の間および第N番目の前記冷間加工成形工程の後に、N個の焼きなまし工程を前記中間線材に対してそれぞれ行う工程であって、
第(N−1)番目および第N番目の前記冷間加工成形工程の間の第(N−1)番目の前記焼きなまし工程は、焼きなまし温度0.5Tmから0.7Tmで焼きなまし時間1秒から10秒間行い、このうちTmは前記太線材の前記材料のケルビン温度目盛(Kelvin temperature scale)における融点であり、かつ、
第N番目の前記冷間加工成形工程の後の第N番目の前記焼きなまし工程は、第(N−1)番目の前記焼きなまし工程よりも高い20Kから100Kの焼きなまし温度で焼きなまし時間2秒から60秒間行い、これによって面心立方晶相の多結晶構造を有すると共に複数の結晶粒を含む前記細線材となり、このうち前記細線材の中心部は細長い結晶粒または等軸結晶粒を含み、前記細線材のその他の部分は等軸結晶粒からなり、かつ前記結晶粒の少なくとも一部に焼きなまし双晶を形成しており、前記焼なまし双晶を含む前記結晶粒の数量が前記細線材の前記結晶粒の総量の20パーセント以上である、工程、
を含む方法。 - 前記冷間加工成形工程が伸線工程、押出工程またはこれらの組み合わせである請求項10に記載の方法。
- 前記太線材の前記準備が、
前記太線材の前記材料の原料を溶融させてから、鋳造によりインゴットを形成する工程、および
前記インゴットに冷間加工を行って前記太線材を完成させる工程
を含む請求項10に記載の方法。 - 前記太線材の前記準備が、前記太線材の前記材料の原料を溶融させてから、連続鋳造のプロセスにより前記太線材を形成する工程を含む請求項10に記載の方法。
- 前記冷間加工成形工程の前に、電気めっき、蒸着またはスパッタリングを用いて前記太線材の表面上に金属コーティングをメッキする工程をさらに含み、前記金属コーティングが、実質上の純金、実質上の純パラジウムおよび金−パラジウム合金よりなる群のうちの1つから選ばれる材料からなる請求項10に記載の方法。
- 第N番目の前記冷間加工成形工程の後に、電気めっき、蒸着またはスパッタリングを用いて前記太線材の表面上に金属コーティングをメッキする工程をさらに含み、前記金属コーティングが、実質上の純金、実質上の純パラジウムおよび金−パラジウム合金よりなる群のうちの1つから選ばれる材料からなる請求項10に記載の方法。
- 前記銀−金合金が0.01から30.00重量パーセントの金および残余の銀を含み、
前記銀−パラジウム合金が0.01から10.00重量パーセントのパラジウムおよび残余の銀を含み、
前記銀−金−パラジウム合金が0.01から30.00重量パーセントの金、0.01から10.00重量パーセントのパラジウムおよび残余の銀を含む
請求項10に記載の方法。 - 前記太線材の線径が5mmから10mmであり、前記細線材の線径が10μmから50μmである請求項10に記載の方法。
- 前記金属コーティングが0.1μmから10μmの厚さである請求項14に記載の方法。
- 前記金属コーティングが0.1μmから5μmの厚さである請求項15に記載の方法。
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- 2012-06-20 TW TW101122015A patent/TWI384082B/zh active
- 2012-12-21 JP JP2012279489A patent/JP5670412B2/ja not_active Expired - Fee Related
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JP2014053610A (ja) * | 2012-09-04 | 2014-03-20 | Heraeus Materials Technology Gmbh & Co Kg | ボンディング適用のための銀合金ワイヤ |
KR20150139980A (ko) | 2014-03-31 | 2015-12-14 | 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 | 반도체 장치용 본딩 와이어 및 그 제조 방법 |
KR20150140405A (ko) | 2014-03-31 | 2015-12-15 | 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 | 반도체 장치용 본딩 와이어 및 그 제조 방법 |
US9543266B2 (en) | 2014-03-31 | 2017-01-10 | Nippon Micrometal Corporation | Bonding wire for semiconductor device use and method of production of same |
JP2016029691A (ja) * | 2014-07-25 | 2016-03-03 | 田中電子工業株式会社 | 表面改質銀パラジウム合金ワイヤの構造 |
KR20170095317A (ko) | 2014-12-17 | 2017-08-22 | 신닛테츠스미킹 마테리알즈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
US10840208B2 (en) | 2014-12-17 | 2020-11-17 | Nippon Steel Chemical & Material Co., Ltd | Bonding wire for semiconductor device |
JP2019529694A (ja) * | 2016-09-09 | 2019-10-17 | ヘレウス マテリアルズ シンガポール ピーティーイー. リミテッド | 被覆したワイヤ |
Also Published As
Publication number | Publication date |
---|---|
US8940403B2 (en) | 2015-01-27 |
KR101328863B1 (ko) | 2013-11-13 |
TW201247905A (en) | 2012-12-01 |
CN103184362A (zh) | 2013-07-03 |
JP5670412B2 (ja) | 2015-02-18 |
US20130171470A1 (en) | 2013-07-04 |
TWI384082B (zh) | 2013-02-01 |
CN103184362B (zh) | 2015-05-20 |
KR20130079452A (ko) | 2013-07-10 |
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