JP6047214B1 - ボールボンディング用貴金属被覆銅ワイヤ - Google Patents
ボールボンディング用貴金属被覆銅ワイヤ Download PDFInfo
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- JP6047214B1 JP6047214B1 JP2015215919A JP2015215919A JP6047214B1 JP 6047214 B1 JP6047214 B1 JP 6047214B1 JP 2015215919 A JP2015215919 A JP 2015215919A JP 2015215919 A JP2015215919 A JP 2015215919A JP 6047214 B1 JP6047214 B1 JP 6047214B1
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Abstract
Description
2006年7月号のSEIテクニカルレビュー誌169号47頁以下の改森信吾らによる「ハイブリッドボンディングワイヤーの開発」
前記含有元素がイオウ(S)、カーボン(C)、リン(P)、ホウ素(B)、シリコン(Si)、ゲルマニウム(Ge)、砒素(As)、セレン(Se)、インジウム(In)、スズ(Sn)、アンチモン(Sb)、テルル(Te)若しくはビスマス(Bi)またはこれらの酸化物の内の1種または2種以上からなる元素であることが好ましい。さらに、前記含有元素がイオウ(S)、リン(P)、セレン(Se)、テルル(Te)または酸素元素の内の1種または2種以上からなる含有元素であることがより好ましい。特に、前記含有元素がイオウ(S)であることが最も好ましい。他方、前記含有元素がカーボン(C)であることもより好ましい。
また、前記貴金属被覆層の表面に酸素元素が検出されることが好ましい。
また前記貴金属被覆層の表面に銅(Cu)が検出されることが好ましい。
また、前記芯材が白金(Pt)、パラジウム(Pd)またはニッケル(Ni)のうちの少なくとも1種または2種以上を合計で0.1質量%以上2質量%以下含有する銅合金であることが好ましい。
また、前記芯材が0.1質量ppm以上10質量ppm以下の水素を含有する銅合金であることが好ましい。
が好ましい。以下、それぞれの構成要素の存在理由を説明する。
(基本的構成について)
(含有元素について)
(用語について)
(パラジウム形骸化層について)
(金(Au)極薄延伸層について)
(銅(Cu)拡散層について)
(芯材について)
パラジウム(Pd)−イオウ(S)非晶質合金の被覆層は、次のようにして形成した。市販のパラジウム(Pd)電気めっき浴(日本エレクトロプレーティング株式会社製ADP700)に同社製ADP700添加剤を0.1g/L、0.005g/Lおよび0.15g/Lそれぞれ添加した。添加剤の添加量によって電気めっき浴中のイオウ(S)濃度を中濃度、低濃度および高濃度とした。この浴中で直径1.0mm銅線に電流密度0.75A/dm2で電流を流し、パラジウム(Pd)−イオウ(S)共析めっきの被覆層を形成した。この3種類の被覆銅線に金(Au)をマグネトロンスパッタリングにより所定の厚さ被覆した。
パラジウム(Pd)−リン(P)非晶質合金の被覆層は次のようにして形成した。まず下地めっきとしてニッケル(Ni)電気めっきを施した。ワット浴中で直径1.0mm銅線に電流密度2A/dm2で電流を流し、0.2μmのニッケル(Ni)被覆層を形成した。次いで市販のパラジウム(Pd)電気めっき浴(日本エレクトロプレーティング株式会社製ADP700)に亜リン酸(H3PO3)を0.2g/L添加した。この浴中で直径1.0mm銅線に電流密度0.75A/dm2で電流を流し、パラジウム(Pd)−リン(P)非晶質合金の被覆層を形成した。その後、実施例1と同様にして実施例4のボールボンディング用貴金属被覆銅ワイヤを製造した。
実施例4の貴金属被覆銅ワイヤにおける水素濃度およびパラジウム(Pd)形骸化層中の含有リン(P)濃度は、それぞれ6質量ppmおよび420質量ppmであった。
パラジウム(Pd)−カーボン(C)−ホウ素(B)含有合金の被覆層は、次のようにして形成した。市販のパラジウム(Pd)電気めっき浴(日本エレクトロプレーティング株式会社製ADP700)に界面活性剤(日本エレクトロプレーティング株式会社製JSウェッター)を2mL/Lおよびホウ素無機化合物を所定量添加し、さらに鎖状高分子光沢剤を添加した。この浴中で直径1.0mm銅線に電流密度0.75A/dm2で電流を流し、パラジウム(Pd)−カーボン(C)−ホウ素(B)共析めっきの被覆層を形成した。その後、実施例1と同様にして実施例5のボールボンディング用貴金属被覆銅ワイヤを製造した。
パラジウム(Pd)−セレン(Se)、テルル(Te)またはイオウ(S)共析めっきの被覆層は、次のようにして形成した。市販のパラジウム(Pd)電気めっき浴(日本エレクトロプレーティング株式会社製ADP700)に結晶調整剤としてのセレン(Se)化合物またはテルル(Te)、化合物を所定量加えた。さらに実施例1と同様のイオウ(S)化合物を添加した。
実施例1〜実施例8のワイヤについて、ケイ・アンド・エス社製全自動リボンボンダーICONN型超音波装置にて、BGA基板上の厚さ400μmのSiチップ上の厚さ2μmのAl−1質量%Si−0.5質量%Cu合金パッド上に、EFO電流60mA、EFO時間144マイクロ秒で34μmの溶融ボールを作製し、圧着径50μm、ループ長2mmで、1,000本ボンディングを行った。
(比較例の含有元素濃度)
比較例1および比較例2のワイヤについて、実施例1〜5と同様にして、高温高湿(130℃×85RH)保持の前後での回路の電気抵抗値の変化を調べた。比較例1および比較例2のワイヤは、回路の電気抵抗値が上昇しており、ボンディングワイヤとして不適当であることがわかる。この結果を表1右欄に×印で示す。
Claims (15)
- 線径が10μm以上25μm以下のボールボンディング用貴金属被覆銅ワイヤであって銅(Cu)の純度が98質量%以上の銅合金からなる芯材上に貴金属被覆層が形成されたものにおいて、当該貴金属被覆層は、第13族〜16族の元素若しくは酸素元素のうち少なくとも1種若しくは2種以上の含有元素が微分散したパラジウム(Pd)形骸化層、およびパラジウム(Pd)と銅(Cu)の拡散層からなることを特徴とするボールボンディング用貴金属被覆銅ワイヤ。
- 線径が10μm以上25μm以下のボールボンディング用貴金属被覆銅ワイヤであって銅(Cu)の純度が98質量%以上の銅合金からなる芯材上に貴金属被覆層が形成されたものにおいて、当該貴金属被覆層は、金(Au)極薄延伸層、第13族〜16族の元素若しくは酸素元素のうち少なくとも1種若しくは2種以上の含有元素が微分散したパラジウム(Pd)形骸化層およびパラジウム(Pd)と銅(Cu)の拡散層からなることを特徴とするボールボンディング用貴金属被覆銅ワイヤ。
- 線径が10μm以上25μm以下のボールボンディング用貴金属被覆銅ワイヤであって銅(Cu)の純度が98質量%以上の銅合金からなる芯材上に貴金属被覆層が形成されたものにおいて、当該貴金属被覆層は、第13族〜16族の元素若しくは酸素元素のうち少なくとも1種若しくは2種以上の含有元素が微分散したパラジウム(Pd)形骸化層からなり、当該芯材と当該貴金属被覆層とのあいだにニッケル(Ni)中間層があることを特徴とするボールボンディング用貴金属被覆銅ワイヤ。
- 線径が10μm以上25μm以下のボールボンディング用貴金属被覆銅ワイヤであって銅(Cu)の純度が98質量%以上の銅合金からなる芯材上に貴金属被覆層が形成されたものにおいて、当該貴金属被覆層は、金(Au)極薄延伸層、第13族〜16族の元素若しくは酸素元素のうち少なくとも1種若しくは2種以上の含有元素が微分散したパラジウム(Pd)形骸化層からなり、当該芯材と当該貴金属被覆層とのあいだにニッケル(Ni)中間層があることを特徴とするボールボンディング用貴金属被覆銅ワイヤ。
- 前記含有元素がイオウ(S)、カーボン(C)、リン(P)、ホウ素(B)、シリコン(Si)、ゲルマニウム(Ge)、砒素(As)、セレン(Se)、インジウム(In)、スズ(Sn)、アンチモン(Sb)、テルル(Te)若しくはビスマス(Bi)またはこれらの酸化物の内の1種または2種以上からなる元素であることを特徴とする請求項1〜請求項4までのいずれか一の請求項に記載したボールボンディング用貴金属被覆銅ワイヤ。
- 前記含有元素がイオウ(S)、リン(P)、セレン(Se)、テルル(Te)または酸素元素の内の1種または2種以上からなる含有元素であることを特徴とする請求項1〜請求項4までのいずれか一の請求項に記載したボールボンディング用貴金属被覆銅ワイヤ。
- 前記含有元素がイオウ(S)であることを特徴とする請求項1〜請求項4までのいずれか一の請求項に記載したボールボンディング用貴金属被覆銅ワイヤ。
- 前記含有元素がカーボン(C)であることを特徴とする請求項1〜請求項4までのいずれか一の請求項に記載したボールボンディング用貴金属被覆銅ワイヤ。
- 前記貴金属被覆層が20ナノメートル(nm)以上300ナノメートル(nm)以下の理論的膜厚であることを特徴とする請求項1〜請求項4までのいずれか一の請求項に記載したボールボンディング用貴金属被覆銅ワイヤ。
- 前記貴金属被覆層の表面に酸素元素が検出されることを特徴とする請求項1〜請求項4までのいずれか一の請求項に記載したボールボンディング用貴金属被覆銅ワイヤ。
- 前記貴金属被覆層の表面に銅(Cu)が検出されることを特徴とする請求項1〜請求項4までのいずれか一の請求項に記載したボールボンディング用貴金属被覆銅ワイヤ。
- 前記芯材が0.003質量%以上0.2質量%以下のリン(P)を含有する銅合金であることを特徴とする請求項1〜請求項4までのいずれか一の請求項に記載したボールボンディング用貴金属被覆銅ワイヤ。
- 前記芯材が白金(Pt)、パラジウム(Pd)またはニッケル(Ni)のうちの少なくとも1種または2種以上を合計で0.1質量%以上2質量%以下含有する銅合金であることを特徴とする請求項1〜請求項4までのいずれか一の請求項に記載したボールボンディング用貴金属被覆銅ワイヤ。
- 前記芯材が0.1質量ppm以上10質量ppm以下の水素を含有する銅合金であることを特徴とする請求項1〜請求項4までのいずれか一の請求項に記載したボールボンディング用貴金属被覆銅ワイヤ。
- 前記パラジウム(Pd)形骸化層が延伸された湿式めっき層であることを特徴とする請求項1〜請求項4までのいずれか一の請求項に記載したボールボンディング用貴金属被覆銅ワイヤ。
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JP2015215919A JP6047214B1 (ja) | 2015-11-02 | 2015-11-02 | ボールボンディング用貴金属被覆銅ワイヤ |
TW105127659A TWI612156B (zh) | 2015-11-02 | 2016-08-29 | 球焊用貴金屬被覆銅線 |
PH12016000370A PH12016000370B1 (en) | 2015-11-02 | 2016-10-20 | Noble metal-coated copper wire for ball bonding |
US15/337,771 US20170125135A1 (en) | 2015-11-02 | 2016-10-28 | Noble metal-coated copper wire for ball bonding |
CN201610961602.2A CN107039295B (zh) | 2015-11-02 | 2016-10-28 | 球焊用贵金属被覆铜线 |
SG10201609063VA SG10201609063VA (en) | 2015-11-02 | 2016-10-31 | Noble metal-coated copper wire for ball bonding |
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JP6507329B1 (ja) * | 2019-02-08 | 2019-04-24 | 田中電子工業株式会社 | パラジウム被覆銅ボンディングワイヤ、ワイヤ接合構造、半導体装置及び半導体装置の製造方法 |
JP7168760B2 (ja) * | 2019-03-12 | 2022-11-09 | 田中電子工業株式会社 | パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、及びこれを用いたワイヤ接合構造、半導体装置並びにその製造方法 |
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JP7168779B2 (ja) * | 2019-06-04 | 2022-11-09 | 田中電子工業株式会社 | パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、これを用いた半導体装置及びその製造方法 |
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KR20240026929A (ko) * | 2021-06-25 | 2024-02-29 | 닛데쓰마이크로메탈가부시키가이샤 | 반도체 장치용 본딩 와이어 |
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JP2017092078A (ja) | 2017-05-25 |
PH12016000370A1 (en) | 2018-04-23 |
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SG10201609063VA (en) | 2017-06-29 |
CN107039295B (zh) | 2019-10-18 |
PH12016000370B1 (en) | 2018-04-23 |
TW201716592A (zh) | 2017-05-16 |
US20170125135A1 (en) | 2017-05-04 |
CN107039295A (zh) | 2017-08-11 |
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