JP4886899B2 - 半導体用ボンディングワイヤ - Google Patents
半導体用ボンディングワイヤ Download PDFInfo
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- JP4886899B2 JP4886899B2 JP2010525154A JP2010525154A JP4886899B2 JP 4886899 B2 JP4886899 B2 JP 4886899B2 JP 2010525154 A JP2010525154 A JP 2010525154A JP 2010525154 A JP2010525154 A JP 2010525154A JP 4886899 B2 JP4886899 B2 JP 4886899B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
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- C22C—ALLOYS
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- C22C5/02—Alloys based on gold
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
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- C—CHEMISTRY; METALLURGY
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- C22C—ALLOYS
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- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
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- C—CHEMISTRY; METALLURGY
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- C22C—ALLOYS
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- C22C21/12—Alloys based on aluminium with copper as the next major constituent
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- C22C5/04—Alloys based on a platinum group metal
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- C22C—ALLOYS
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- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- Engineering & Computer Science (AREA)
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- Mechanical Engineering (AREA)
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Description
2: 外層
3: 拡散層
4: 表面濃化層
5: 外層内部の単一金属層
6: 中間層
7: 外層と中間層を総計した厚さ
8: 3元素以上が混在する濃度勾配
A: 外層の主成分
B: 芯材の主成分
C: 表面濃化層の主成分
D: 中間層の主成分
Claims (19)
- Cu、Au、Agの1種以上の元素を98mol%以上含有する芯材と、前記芯材の上に、残部が前記芯材を構成する元素からなり、Pdの検出濃度が50mol%以上の部位から表面の領域であるPd外層からなる外層と、
または、
Cuを98mol%以上含有する芯材と、前記芯材の上に、残部が前記芯材を構成する元素からなり、Pdの検出濃度が50mol%以上の部位から表面の領域であるPd外層と当該Pd外層の表面側に設けられたAg、Auのうち1種以上の濃化層とからなる外層と
を有する半導体用ボンディングワイヤであって、
前記ワイヤ全体に含まれる総計の水素濃度が0.0001〜0.0078mass%の範囲であり、
前記水素濃度の内、100〜300℃/hの昇温速度で測定される昇温脱離ガス分析において、150〜500℃の温度範囲で検出される水素濃度の全測定温度範囲で検出される総計の水素濃度に対する比率が50%以上である
ことを特徴とする半導体用ボンディングワイヤ。 - 前記水素濃度が0.0001〜0.004mass%の範囲であることを特徴とする請求項1に記載の半導体用ボンディングワイヤ。
- 前記水素濃度が、昇温脱離ガス分析(Thermal Desorption Spectrometry: TDS)により測定した前記ボンディングワイヤに含まれる水素濃度であることを特徴とする請求項1又は2に記載の半導体用ボンディングワイヤ。
- 前記Pd外層からなる外層の厚さが0.01〜0.2μmの範囲であることを特徴とする請求項1〜3のいずれか1項に記載の半導体用ボンディングワイヤ。
- 前記Pd外層からなる外層内において、金属系元素の総計に対するPd濃度が80mol%以上の範囲である領域の厚さが0.003〜0.08μmであることを特徴とする請求項1〜4のいずれか1項に記載の半導体用ボンディングワイヤ。
- 前記Pd外層からなる外層と芯材の間に濃度勾配を有する拡散層を有し、前記拡散層の厚さが0.003〜0.15μmであることを特徴とする請求項1〜5のいずれか1項に記載の半導体用ボンディングワイヤ。
- 前記芯材がCu又はAuを98mol%以上含有し、Pd、Ag、Ptの1種以上の元素を含有し、芯材に占める該元素濃度の総計が総計で0.01〜2mol%の範囲であることを特徴とする請求項1〜6のいずれか1項に記載の半導体用ボンディングワイヤ。
- 前記芯材がCuを98mol%以上含有し、Al、Sn、Zn、B、Pの1種以上の合金元素を含有し、ワイヤ全体に占める該合金元素濃度が総計で0.0001〜0.05mol%の範囲であることを特徴とする請求項1〜7のいずれか1項に記載の半導体用ボンディングワイヤ。
- 前記濃化層がAg、Auのうち1種以上の濃度勾配をワイヤ径方向に有するものであることを特徴とする請求項1に記載の半導体用ボンディングワイヤ。
- 前記濃化層の最表面におけるPd濃度が20〜90mol%の範囲であることを特徴とする請求項1に記載の半導体用ボンディングワイヤ。
- 前記外層の内部にPd単一金属層を有することを特徴とする請求項1に記載の半導体用ボンディングワイヤ。
- 前記濃化層を有する外層の厚さが0.02〜0.4μmの範囲であることを特徴とする請求項1に記載の半導体用ボンディングワイヤ。
- 前記芯材がCuを98mol%以上含有し、前記芯材と前記外層との間にAg、Auのうち1種以上が濃化した中間層を有することを特徴とする請求項1記載の半導体用ボンディングワイヤ。
- 前記中間層がAg、Auのうち1種以上の濃度勾配をワイヤ径方向に有するものであることを特徴とする請求項13に記載の半導体用ボンディングワイヤ。
- 前記中間層におけるAg、Auを総計した最高濃度が30〜90mol%の範囲であることを特徴とする請求項13に記載の半導体用ボンディングワイヤ。
- 前記中間層が、Ag、Auのうち1種以上の元素とPdとCuとが共存し、かつ該3元素の濃度勾配をワイヤ径方向に有する領域を含むものであることを特徴とする請求項14に記載の半導体用ボンディングワイヤ。
- 前記外層と前記中間層を総計した厚さが0.02〜0.5μmの範囲であることを特徴とする請求項13に記載の半導体用ボンディングワイヤ。
- ボンディングワイヤ中の、Pd、Ag、Auを総計した濃度が0.4〜4mol%の範囲であることを特徴とする請求項1又は13に記載の半導体用ボンディングワイヤ。
- ボンディングワイヤ中の、Pd濃度に対するAg、Auを総計した濃度の比率が0.001〜0.4の範囲であることを特徴とする請求項1又は13に記載の半導体用ボンディングワイヤ。
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US8815019B2 (en) | 2014-08-26 |
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JPWO2010106851A1 (ja) | 2012-09-20 |
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KR101144406B1 (ko) | 2012-05-10 |
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