WO2008155917A1 - スイッチング素子駆動回路 - Google Patents

スイッチング素子駆動回路 Download PDF

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Publication number
WO2008155917A1
WO2008155917A1 PCT/JP2008/001587 JP2008001587W WO2008155917A1 WO 2008155917 A1 WO2008155917 A1 WO 2008155917A1 JP 2008001587 W JP2008001587 W JP 2008001587W WO 2008155917 A1 WO2008155917 A1 WO 2008155917A1
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
switching element
rising
level
outputs
Prior art date
Application number
PCT/JP2008/001587
Other languages
English (en)
French (fr)
Inventor
Masaki Tagome
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to JP2008557532A priority Critical patent/JPWO2008155917A1/ja
Priority to US12/376,493 priority patent/US7821306B2/en
Publication of WO2008155917A1 publication Critical patent/WO2008155917A1/ja

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30Modifications for providing a predetermined threshold before switching
    • H03K17/302Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163Soft switching
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036Means reducing energy consumption

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)

Abstract

 ゲート電圧検出回路201は、スイッチング素子11のゲート電圧Vgsを検出し、このゲート電圧がスイッチング素子11の閾値電圧未満に設定された所定電圧未満のとき、Hレベルの昇圧指示信号を出力する。電圧制御回路103は、前記昇圧指示信号がLレベルの間は、制御電源102の所定電圧V1をそのまま出力し、前記昇圧指示信号がHレベルの間は、前記所定電圧V1を昇圧した電圧V2を出力する。駆動信号出力回路104は、PWMパルス出力回路111から出力されるPWMパルスの電圧を電圧制御回路103から出力される電圧に増幅する。従って、駆動信号出力回路104からスイッチング素子11への駆動信号は、前記PWMパルスがHレベルになった時に、先ず昇圧された電圧V2となり、スイッチング素子11のゲート電圧Vgsが所定電圧にまで上昇すると、所定電圧V1となる。従って、スイッチング素子のスイッチング損失が抑制できる。
PCT/JP2008/001587 2007-06-19 2008-06-19 スイッチング素子駆動回路 WO2008155917A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008557532A JPWO2008155917A1 (ja) 2007-06-19 2008-06-19 スイッチング素子駆動回路
US12/376,493 US7821306B2 (en) 2007-06-19 2008-06-19 Switching device drive circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007161648 2007-06-19
JP2007-161648 2007-06-19

Publications (1)

Publication Number Publication Date
WO2008155917A1 true WO2008155917A1 (ja) 2008-12-24

Family

ID=40156081

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001587 WO2008155917A1 (ja) 2007-06-19 2008-06-19 スイッチング素子駆動回路

Country Status (3)

Country Link
US (1) US7821306B2 (ja)
JP (2) JPWO2008155917A1 (ja)
WO (1) WO2008155917A1 (ja)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011067903A1 (ja) * 2009-12-03 2011-06-09 パナソニック株式会社 スイッチ装置
JP2011250603A (ja) * 2010-05-27 2011-12-08 Jtekt Corp モータ制御装置及び電動パワーステアリング装置
WO2013065150A1 (ja) * 2011-11-02 2013-05-10 三菱電機株式会社 電力変換装置の駆動装置および電力変換装置の駆動方法
JP2014090316A (ja) * 2012-10-30 2014-05-15 Juki Corp ゲート駆動回路
JP2014152656A (ja) * 2013-02-06 2014-08-25 Denso Corp 電磁弁駆動装置
JP2015165768A (ja) * 2015-05-21 2015-09-17 三菱電機株式会社 電力変換装置の駆動装置および電力変換装置の駆動方法
US9246474B2 (en) 2011-05-11 2016-01-26 Fuji Electric Co., Ltd. Drive circuit for insulated gate switching element
JP2019186992A (ja) * 2018-04-03 2019-10-24 トヨタ自動車株式会社 電力変換装置
JP2020061595A (ja) * 2018-10-04 2020-04-16 富士電機株式会社 スイッチング制御回路、電源回路
US10734882B2 (en) 2018-02-09 2020-08-04 Delta Electronics, Inc. Conversion circuit
US10784770B2 (en) 2018-02-09 2020-09-22 Delta Electronics, Inc. Conversion circuit
US10784768B2 (en) 2018-02-09 2020-09-22 Delta Electronics, Inc. Conversion circuit and conversion circuitry
US11309887B2 (en) 2018-02-09 2022-04-19 Delta Electronics, Inc. Conversion circuit
WO2022230337A1 (ja) * 2021-04-30 2022-11-03 日立Astemo株式会社 半導体スイッチング素子の駆動装置およびその駆動方法、電力変換装置
CN116647219A (zh) * 2023-04-27 2023-08-25 北京芯可鉴科技有限公司 Igbt驱动电路、用于驱动igbt的方法及芯片

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CN103620930B (zh) * 2011-06-09 2016-04-06 三菱电机株式会社 栅极驱动电路
JP5477407B2 (ja) 2012-02-16 2014-04-23 株式会社デンソー ゲート駆動回路
BR112015002230B1 (pt) * 2012-08-02 2021-08-17 Nissan Motor Co., Ltd. Sistema de gerenciamento de carregamento de bateria para um veículoguiado automatizado e método de gerenciamento de carregamento de bateria para um veículo guiado automatizado
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JP6089599B2 (ja) * 2012-11-01 2017-03-08 富士電機株式会社 絶縁ゲート型半導体素子の駆動装置
JP6001445B2 (ja) * 2012-12-27 2016-10-05 株式会社東芝 駆動回路および半導体装置
JP5761215B2 (ja) 2013-01-21 2015-08-12 株式会社デンソー ゲート駆動回路
JP6371053B2 (ja) * 2013-12-13 2018-08-08 株式会社日立製作所 整流装置、オルタネータおよび電力変換装置
JP6349897B2 (ja) * 2014-04-11 2018-07-04 株式会社デンソー 駆動回路のタイミング調整方法及び駆動回路のタイミング調整回路
US9825625B2 (en) * 2014-07-09 2017-11-21 CT-Concept Technologie GmbH Multi-stage gate turn-off with dynamic timing
JP6265099B2 (ja) * 2014-10-08 2018-01-24 三菱電機株式会社 半導体装置
DE102016223312A1 (de) * 2016-11-24 2018-05-24 Audi Ag Leistungshalbleiterbaugruppe für ein Kraftfahrzeug, Kraftfahrzeug und Verfahren zum Betreiben einer Leistungshalbleiterbaugruppe
US10374591B2 (en) 2017-01-03 2019-08-06 General Electric Company Systems and methods for a gate drive circuit
CN110546886B (zh) 2017-04-26 2023-01-06 三菱电机株式会社 半导体元件的驱动方法及驱动装置以及电力变换装置
DE102017118467B4 (de) * 2017-08-14 2019-05-02 Semikron Elektronik Gmbh & Co. Kg Steuereinrichtung für einen Leistungshalbleiterschalter
JP7262945B2 (ja) * 2018-08-29 2023-04-24 株式会社日立製作所 ゲート駆動回路および電圧駆動型ワイドギャップ半導体の駆動方法
KR102612830B1 (ko) * 2019-02-08 2023-12-11 엘지마그나 이파워트레인 주식회사 전력변환장치
JP7278369B2 (ja) * 2019-04-09 2023-05-19 三菱電機株式会社 電力用半導体素子の駆動回路
CN110071620B (zh) 2019-04-16 2021-08-20 华为技术有限公司 一种控制电路、电压源电路、驱动装置和驱动方法
US10790818B1 (en) * 2019-09-27 2020-09-29 Infineon Technologies Austria Ag Slew rate control by adaptation of the gate drive voltage of a power transistor
CN111654268B (zh) * 2020-06-24 2023-11-17 长沙丹芬瑞电气技术有限公司 一种碳化硅器件的门极驱动电路及驱动方法
CN112737550A (zh) * 2020-10-30 2021-04-30 北京空间飞行器总体设计部 双冗余容错高可靠正脉冲和负脉冲开关指令驱动装置
WO2022200819A1 (ja) * 2021-03-22 2022-09-29 日産自動車株式会社 駆動回路
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US11632107B1 (en) 2021-10-01 2023-04-18 Psemi Corporation Gate resistive ladder bypass for RF FET switch stack
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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011067903A1 (ja) * 2009-12-03 2011-06-09 パナソニック株式会社 スイッチ装置
JP2011250603A (ja) * 2010-05-27 2011-12-08 Jtekt Corp モータ制御装置及び電動パワーステアリング装置
US9246474B2 (en) 2011-05-11 2016-01-26 Fuji Electric Co., Ltd. Drive circuit for insulated gate switching element
WO2013065150A1 (ja) * 2011-11-02 2013-05-10 三菱電機株式会社 電力変換装置の駆動装置および電力変換装置の駆動方法
JPWO2013065150A1 (ja) * 2011-11-02 2015-04-02 三菱電機株式会社 電力変換装置の駆動装置および電力変換装置の駆動方法
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JP2014090316A (ja) * 2012-10-30 2014-05-15 Juki Corp ゲート駆動回路
JP2014152656A (ja) * 2013-02-06 2014-08-25 Denso Corp 電磁弁駆動装置
JP2015165768A (ja) * 2015-05-21 2015-09-17 三菱電機株式会社 電力変換装置の駆動装置および電力変換装置の駆動方法
US10734882B2 (en) 2018-02-09 2020-08-04 Delta Electronics, Inc. Conversion circuit
US10784770B2 (en) 2018-02-09 2020-09-22 Delta Electronics, Inc. Conversion circuit
US10784768B2 (en) 2018-02-09 2020-09-22 Delta Electronics, Inc. Conversion circuit and conversion circuitry
TWI718476B (zh) * 2018-02-09 2021-02-11 台達電子工業股份有限公司 轉換電路
US11309887B2 (en) 2018-02-09 2022-04-19 Delta Electronics, Inc. Conversion circuit
JP2019186992A (ja) * 2018-04-03 2019-10-24 トヨタ自動車株式会社 電力変換装置
JP2020061595A (ja) * 2018-10-04 2020-04-16 富士電機株式会社 スイッチング制御回路、電源回路
JP7338139B2 (ja) 2018-10-04 2023-09-05 富士電機株式会社 スイッチング制御回路、電源回路
WO2022230337A1 (ja) * 2021-04-30 2022-11-03 日立Astemo株式会社 半導体スイッチング素子の駆動装置およびその駆動方法、電力変換装置
CN116647219A (zh) * 2023-04-27 2023-08-25 北京芯可鉴科技有限公司 Igbt驱动电路、用于驱动igbt的方法及芯片

Also Published As

Publication number Publication date
US20100176783A1 (en) 2010-07-15
US7821306B2 (en) 2010-10-26
JPWO2008155917A1 (ja) 2010-08-26
JP2012147492A (ja) 2012-08-02

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