WO2007086280A1 - 積層構造及びそれを用いた電気回路用電極 - Google Patents
積層構造及びそれを用いた電気回路用電極 Download PDFInfo
- Publication number
- WO2007086280A1 WO2007086280A1 PCT/JP2007/050497 JP2007050497W WO2007086280A1 WO 2007086280 A1 WO2007086280 A1 WO 2007086280A1 JP 2007050497 W JP2007050497 W JP 2007050497W WO 2007086280 A1 WO2007086280 A1 WO 2007086280A1
- Authority
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- WIPO (PCT)
- Prior art keywords
- thin film
- film
- ito
- laminated structure
- molybdenum
- Prior art date
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- 239000010409 thin film Substances 0.000 claims abstract description 108
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910003437 indium oxide Inorganic materials 0.000 claims description 23
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 16
- 229910001887 tin oxide Inorganic materials 0.000 claims description 16
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 68
- 238000000034 method Methods 0.000 abstract description 25
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 22
- 239000011733 molybdenum Substances 0.000 abstract description 22
- 238000005530 etching Methods 0.000 abstract description 14
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- 230000002265 prevention Effects 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract 2
- 239000012789 electroconductive film Substances 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 229910004205 SiNX Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- MMOXZBCLCQITDF-UHFFFAOYSA-N N,N-diethyl-m-toluamide Chemical compound CCN(CC)C(=O)C1=CC=CC(C)=C1 MMOXZBCLCQITDF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- LIFHVOVNSMHTKB-UHFFFAOYSA-N [O-2].[Zn+2].[Sn+2]=O.[O-2].[In+3] Chemical compound [O-2].[Zn+2].[Sn+2]=O.[O-2].[In+3] LIFHVOVNSMHTKB-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229940072673 ismo Drugs 0.000 description 1
- YWXYYJSYQOXTPL-SLPGGIOYSA-N isosorbide mononitrate Chemical compound [O-][N+](=O)O[C@@H]1CO[C@@H]2[C@@H](O)CO[C@@H]21 YWXYYJSYQOXTPL-SLPGGIOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
- C23C28/025—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only with at least one zinc-based layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/02—Single bars, rods, wires, or strips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
Definitions
- the present invention relates to a laminated structure in which a transparent conductive thin film and a molybdenum metal thin film are laminated, and an electrode for an electric circuit using the laminated structure, in particular, various transparent thin films containing indium oxide, and indium tin oxide (ITO) thin film And an electrode for an electric circuit using the same.
- a transparent conductive thin film and a molybdenum metal thin film are laminated, and an electrode for an electric circuit using the laminated structure, in particular, various transparent thin films containing indium oxide, and indium tin oxide (ITO) thin film And an electrode for an electric circuit using the same.
- ITO indium tin oxide
- a thin film obtained by laminating an ITO thin film and a molybdenum thin film is used as a part of an electric circuit such as a liquid crystal display.
- internal stress is generated in each of the formed thin films, causing the film to peel off or break.
- the tensile stress is a stress generated in the thin film when the film forming surface is concave
- the compressive stress is a stress generated in the thin film when the film forming surface is convex.
- ITO usually undergoes compressive stress, and metal thin films, especially molybdenum metal thin films, are subject to tensile stress.
- the stress types compression and tension
- the difference between them increases, resulting in even greater strain at the interface, eventually causing the thin film to peel or break.
- Patent Document 2 In order to prevent this problem, a method of forming a multilayer film by combining complicated processes in order to prevent cracks and disconnections has been disclosed, but the problem is that the yield decreases due to an increase in the number of processes.
- a rhodium film is formed using a vacuum sputtering apparatus, the film is then etched, and a molybdenum film is formed thereon using a vacuum sputtering apparatus. After film formation, this molybdenum film is etched to produce a laminate.
- This method is complicated and low in productivity because the film forming process and the etching process are repeated twice.
- Patent Document 1 Japanese Patent Laid-Open No. 10-253992
- Patent Document 2 Japanese Patent Laid-Open No. 2005-62889
- the present invention has been made in view of the above problems, and an object of the present invention is to provide a crack between wiring materials.
- Another object of the present invention is to provide an electrode for an electric circuit having the laminated structure.
- Still another object of the present invention is to provide an electronic device including the laminated structure or the electric circuit electrode.
- the present inventors have improved the adhesion between the transparent conductive thin film and the molybdenum metal thin film by reducing the film thickness of the transparent conductive film to 35 nm or less. I found out. Therefore, it is possible to achieve both yield prevention by preventing cracks and disconnection and simplifying the process, thereby completing the present invention.
- a laminated structure comprising a transparent conductive thin film and a molybdenum metal thin film, wherein the transparent conductive thin film has a thickness of 35 nm or less.
- the transparent conductive thin film is a thin film containing indium oxide and tin oxide.
- the transparent conductive thin film is a thin film containing indium oxide, tin oxide and zinc oxide. 4. The laminated structure according to 1, wherein the transparent conductive thin film is a thin film containing an oxide of indium oxide and a rare earth element.
- An electrode for an electric circuit comprising the laminated structure according to any one of 1 to 5.
- An electronic device comprising at least a part of an electric circuit including the laminated structure according to any one of 1 to 5 or the electric circuit electrode according to 6.
- the electrode for electrical circuits provided with the said laminated structure can be provided. According to the present invention, it is possible to provide an electronic device including the laminated structure or the electric circuit electrode.
- FIG. L (a) shows the film formation state when the taper angle of ITO film is 0 force S90 ° or more, and (b) shows the film formation state when the taper angle of ITO film is less than ⁇ force S90 °. It is a schematic diagram which shows a state.
- FIG. 2 (a) is an electron diffraction image showing that the thick part of the ITO film is crystal-like, and (b) is that the thin part of the ITO film is amorphous. It is an electron beam diffraction image showing.
- the laminated structure of the present invention is a thin film obtained by laminating a transparent conductive thin film and a molybdenum metal thin film, and can also be referred to as a thin film laminate.
- This laminated structure is usually formed by laminating a transparent conductive thin film and a molybdenum metal thin film in this order on a substrate.
- a molybdenum metal thin film and a transparent conductive thin film can be laminated on the substrate in this order.
- each layer may be patterned in a desired shape. That is, if the transparent conductive thin film and the molybdenum metal thin film are each patterned in a necessary shape and at least a part of the formed patterns overlap, the laminated structure of the present invention is formed.
- the film thickness of the transparent conductive thin film is 35 nm or less, preferably 30 nm or less, more preferably Is 25nn! ⁇ Lnm.
- the film thickness of the molybdenum metal thin film is usually 10 to 500 nm, preferably 20 to 200 nm. Force is not particularly limited and can be appropriately selected depending on the application.
- the substrate is not particularly limited, but usually glass, quartz, plastic or the like can be used.
- the transparent conductive thin film is at least selected from the group consisting of indium oxide, tin oxide, zinc oxide, and rare earth element oxides, which are not particularly limited as long as they are transparent and conductive. It is a thin film containing one or more kinds, and preferably a thin film containing at least one kind selected from indium oxide and at least one kind selected from the group consisting of tin oxide, acid oxide, and rare earth elements.
- the transparent electrode thin film of the present invention include indium oxide-tin oxide thin film (ITO), indium oxide tin monoxide-zinc oxide thin film (ITZO), indium oxide monooxide-cerium thin film (ICO), Examples thereof include indium oxide monooxide samarium thin film (ISmO).
- the transparent electrode thin film contains a plurality of oxides, it is usually used for forming a composite oxide. However, it may be a compound or a mixture as long as it retains transparency and conductivity that can be used as a transparent electrode.
- the transparent electrode thin film is a thin film containing indium oxide and tin oxide
- the weight ratio is not particularly limited, but is usually 80:20 to 99: 1, preferably 85:15 to 95: 5. Outside this range, transparency or conductivity may be reduced. In addition, etching failure and connection failure may occur.
- the transparent electrode thin film is a thin film containing indium oxide, tin oxide and zinc oxide
- the weight ratio of indium oxide: (tin oxide and zinc oxide) is usually 50:50 to 99: 1, preferably 60:40 to 95: 5. Outside this range, transparency or conductivity may decrease. In addition, etching failure and connection failure may occur.
- the transparent electrode thin film is a thin film containing an oxide of indium oxide and a rare earth element
- the weight ratio of each oxide is not particularly limited, but it is usually 80:20 to 99: 1, preferably 90: 10-98: 2. If it is out of this range, it may be transparent or the conductivity may be lowered. In addition, etching failure and connection failure may occur.
- the taper angle of the transparent conductive thin film is preferably less than 90 °, more preferably 45 to 89 °, and still more preferably 60 to 85 °.
- the taper angle is an angle formed when the transparent conductive thin film is patterned by etching or the like.
- the taper angle of the transparent conductive thin film is 90 ° or more
- the taper angle of the ITO film 1 is greater than the ⁇ force. If it exists, the coverage at the time of forming the Si Nx thin film 3 is deteriorated. That is, there is a part where the SiNx thin film 3 is not attached to a part of the ITO film 1 (the part shaded by the ridge formed due to the taper angle ⁇ force S90 ° or more). Causes ITO corrosion.
- FIG. 1 (a) when the SiNx thin film 3 is deposited on the patterned ITO film 1 and Mo film 2 by the CVD method, the taper angle of the ITO film 1 is greater than the ⁇ force. If it exists, the coverage at the time of forming the Si Nx thin film 3 is deteriorated. That is, there is a part where the SiNx thin film 3 is not attached to a part of the ITO film 1 (the part shaded by the ridge formed due to the taper angle ⁇ force S90
- Fig. 2 (a) is an electron diffraction pattern showing that the part (film thickness is thick) is far from the substrate and is like a crystal
- Fig. 2 (b) is the part close to the substrate (film thickness). 2 is an electron diffraction image showing that the thin part is amorphous.
- Fig. 2 (a) it is amorphous before the measurement, and diffraction based on the crystal. Strong force with no pattern recognized During the measurement, ITO was crystallized by an electron beam and a diffraction pattern based on the crystal was observed. Therefore, it was obvious that the thick part has a crystal-like structure.
- Fig. 2 (b) the electron diffraction pattern did not change before and after the measurement of the electron beam, and there was no change in the diffraction pattern based on the crystal. Therefore, it was found that the thin part was made of only amorphous. For the same reason, the taper angle of an ITZO thin film with a film thickness of 35 nm or less that does not crystallize due to annealing is also less than 90 °.
- ITO In the case of ITO, a substrate on which ITO is patterned is heated in a post-beta process or a Si Nx process, and even if it is amorphous (a-ITO), it changes to polycrystalline (p-ITO). .
- a-ITO amorphous
- p-ITO polycrystalline
- ITZO does not crystallize by heating in the post-beta process or SiNx process. That is, the laminated structure of the present invention may be crystalline or amorphous.
- the molybdenum metal thin film may be a single layer of molybdenum metal, or may be a multilayer of molybdenum Z aluminum Z molybdenum, or the like.
- the laminated structure of the present invention can be manufactured, for example, by forming a transparent conductive thin film and a molybdenum metal thin film by sputtering.
- the discharge gas pressure is usually 0.1 to 1 Pa
- the substrate temperature is usually room temperature to 400 ° C.
- the film formation gas is usually argon, argon, and oxygen. Desirable.
- amorphous ITO (a-ITO) method As a specific example of the manufacturing method of the laminated structure of the present invention, for example, there is the following method (amorphous ITO (a-ITO) method).
- An electrode for an electric circuit and further an electric circuit can be manufactured by using the laminated structure of the present invention, and can be used for an electronic device.
- it can be used as an electric circuit for electronic equipment such as liquid crystal, organic-electric-luminescence elements, and plasma display panels.
- the film thickness was measured by an optical thin film measurement system (SCI Film Tek 4000) and a film thickness meter (ULVAC Dektak 8).
- the conditions for forming the ITO thin film are as follows.
- Substrate temperature Room temperature
- Deposition gas type argon: 89%, hydrogen 9%, oxygen 2%
- the film formation conditions for the Mo thin film are as follows.
- Substrate temperature Room temperature
- the sample after the scratch test under the above conditions was observed with an optical microscope, and the point at which the underlying transparent conductive thin film (ITO) film was exposed was defined as the Mo thin film peeling point (the transparent conductive film was peeled off!
- the peel load was calculated by measuring the distance from the scratch start point.
- a laminate was prepared and evaluated under the same conditions as in Example 1 except that the thickness of the ITO film was changed as shown in Table 1.
- ITZO film thickness was changed as shown in Table 1, and the same conditions as in Example 1 were used. A stack of ITZO and Mo films was fabricated and evaluated.
- a laminate was prepared and evaluated under the same conditions as in Example 1 except that the thickness of the ITO film was changed as shown in Table 1.
- Example 1 ITO 10 No peeling 8.72
- Example 2 ITO 20 No peeling 8.59
- Example 3 ITO 30 No peeling 7.37
- Example 4 ITZO 25 No peeling 9.83 Comparative Example 1 ITO 40 Partial peeling 5.09 Comparative Example 2 ITO 100 With peeling 1.11 From Table 1, it was found that when the thickness of the ITO film was 35 nm or less, no peeling was observed and the film was firmly adhered. In addition, when the thickness of the ITO film exceeded 35 nm, the adhesion between the ITO film and the molybdenum film suddenly deteriorated.
- a laminate was prepared under the same conditions as in Example 1 except that the thickness of the ITO film was changed to 30 nm and lOOnm. A pattern was formed on the obtained laminate by the following method, and the taper corner of the ITO film was measured.
- UV cleaning Organic substances on the surface were removed by ultraviolet (UV) irradiation.
- Resist coat Resist HPR-204 (Novolak monoquinone diazide-based photoresist, 8 cps product manufactured by Philip A. Hunt Chemical Co.) was applied by spin coating.
- Prebeta put the resist in an electric oven at 80 ° C for 15 minutes to cure the resist.
- Exposure A halftone mask capable of intermediate exposure was placed and irradiated with ultraviolet rays (UV).
- Post beta Place in an electric oven at 150 ° C for 15 minutes to further cure the remaining resist.
- the taper angle of the ITO thin film patterned by the above method was measured by SEM (scanning electron microscope). For the 30 nm thick ITO film, the taper angle was 80 °, and for the 100 ⁇ m thick ITO film, the taper angle was 150 °.
- the laminated structure of the present invention can be used as an electric circuit electrode of an electronic device, and can be used for manufacturing an electric circuit of an electronic device using the electrode.
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Non-Insulated Conductors (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07706824A EP1978400B1 (en) | 2006-01-25 | 2007-01-16 | Laminated structure, and electrode for electric circuit using the same |
US12/162,028 US8957313B2 (en) | 2006-01-25 | 2007-01-16 | Multilayer structure, and electrode for electrical circuit using the same |
JP2007555892A JP5165388B2 (ja) | 2006-01-25 | 2007-01-16 | 積層構造及びそれを用いた電気回路用電極 |
KR1020087018199A KR101345022B1 (ko) | 2006-01-25 | 2008-07-24 | 적층 구조 및 그것을 이용한 전기 회로용 전극 |
Applications Claiming Priority (2)
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JP2006016974 | 2006-01-25 | ||
JP2006-016974 | 2006-01-25 |
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WO2007086280A1 true WO2007086280A1 (ja) | 2007-08-02 |
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PCT/JP2007/050497 WO2007086280A1 (ja) | 2006-01-25 | 2007-01-16 | 積層構造及びそれを用いた電気回路用電極 |
Country Status (7)
Country | Link |
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US (1) | US8957313B2 (ja) |
EP (1) | EP1978400B1 (ja) |
JP (1) | JP5165388B2 (ja) |
KR (1) | KR101345022B1 (ja) |
CN (1) | CN101375204A (ja) |
TW (1) | TWI427378B (ja) |
WO (1) | WO2007086280A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8957313B2 (en) | 2006-01-25 | 2015-02-17 | Idemitsu Kosan Co., Ltd. | Multilayer structure, and electrode for electrical circuit using the same |
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JP2013122903A (ja) * | 2011-11-10 | 2013-06-20 | Nitto Denko Corp | 有機elデバイス、および、有機elデバイスの製造方法 |
KR20140055097A (ko) | 2012-10-30 | 2014-05-09 | 삼성디스플레이 주식회사 | 터치 스크린 패널의 제조방법 |
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- 2007-01-16 JP JP2007555892A patent/JP5165388B2/ja not_active Expired - Fee Related
- 2007-01-16 EP EP07706824A patent/EP1978400B1/en not_active Expired - Fee Related
- 2007-01-16 CN CNA2007800035210A patent/CN101375204A/zh active Pending
- 2007-01-16 US US12/162,028 patent/US8957313B2/en not_active Expired - Fee Related
- 2007-01-16 WO PCT/JP2007/050497 patent/WO2007086280A1/ja active Application Filing
- 2007-01-22 TW TW096102359A patent/TWI427378B/zh not_active IP Right Cessation
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2008
- 2008-07-24 KR KR1020087018199A patent/KR101345022B1/ko not_active IP Right Cessation
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US8957313B2 (en) | 2006-01-25 | 2015-02-17 | Idemitsu Kosan Co., Ltd. | Multilayer structure, and electrode for electrical circuit using the same |
Also Published As
Publication number | Publication date |
---|---|
EP1978400A4 (en) | 2010-03-03 |
JPWO2007086280A1 (ja) | 2009-06-18 |
TW200732799A (en) | 2007-09-01 |
KR20080087134A (ko) | 2008-09-30 |
JP5165388B2 (ja) | 2013-03-21 |
KR101345022B1 (ko) | 2013-12-26 |
TWI427378B (zh) | 2014-02-21 |
EP1978400A1 (en) | 2008-10-08 |
EP1978400B1 (en) | 2012-08-08 |
US20090008124A1 (en) | 2009-01-08 |
CN101375204A (zh) | 2009-02-25 |
US8957313B2 (en) | 2015-02-17 |
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