WO2006104151A1 - ウエハダイシング用粘着テープおよびそれを用いたチップの製造方法 - Google Patents
ウエハダイシング用粘着テープおよびそれを用いたチップの製造方法 Download PDFInfo
- Publication number
- WO2006104151A1 WO2006104151A1 PCT/JP2006/306309 JP2006306309W WO2006104151A1 WO 2006104151 A1 WO2006104151 A1 WO 2006104151A1 JP 2006306309 W JP2006306309 W JP 2006306309W WO 2006104151 A1 WO2006104151 A1 WO 2006104151A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sensitive adhesive
- pressure
- adhesive layer
- radiation
- layer
- Prior art date
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- 239000002390 adhesive tape Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000010410 layer Substances 0.000 claims abstract description 129
- 150000001875 compounds Chemical class 0.000 claims abstract description 48
- 239000011342 resin composition Substances 0.000 claims abstract description 29
- 230000005855 radiation Effects 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 4
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 90
- 239000000853 adhesive Substances 0.000 claims description 15
- 230000001070 adhesive effect Effects 0.000 claims description 15
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 8
- 229940125898 compound 5 Drugs 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000012790 adhesive layer Substances 0.000 abstract description 24
- 238000006116 polymerization reaction Methods 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 57
- 239000010408 film Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 20
- 238000005520 cutting process Methods 0.000 description 12
- -1 diglycidylaminomethyl Chemical group 0.000 description 11
- 239000002699 waste material Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229920001577 copolymer Polymers 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000001723 curing Methods 0.000 description 5
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 4
- 229920006243 acrylic copolymer Polymers 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical class OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 3
- 239000012948 isocyanate Substances 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- FWWWRCRHNMOYQY-UHFFFAOYSA-N 1,5-diisocyanato-2,4-dimethylbenzene Chemical compound CC1=CC(C)=C(N=C=O)C=C1N=C=O FWWWRCRHNMOYQY-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 2
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 2
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- 125000005907 alkyl ester group Chemical group 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003847 radiation curing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 2
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- 229920003067 (meth)acrylic acid ester copolymer Polymers 0.000 description 1
- UYEDESPZQLZMCL-UHFFFAOYSA-N 1,2-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(C)C(C)=CC=C3SC2=C1 UYEDESPZQLZMCL-UHFFFAOYSA-N 0.000 description 1
- OHLKMGYGBHFODF-UHFFFAOYSA-N 1,4-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=C(CN=C=O)C=C1 OHLKMGYGBHFODF-UHFFFAOYSA-N 0.000 description 1
- HASUCEDGKYJBDC-UHFFFAOYSA-N 1-[3-[[bis(oxiran-2-ylmethyl)amino]methyl]cyclohexyl]-n,n-bis(oxiran-2-ylmethyl)methanamine Chemical compound C1OC1CN(CC1CC(CN(CC2OC2)CC2OC2)CCC1)CC1CO1 HASUCEDGKYJBDC-UHFFFAOYSA-N 0.000 description 1
- CTOHEPRICOKHIV-UHFFFAOYSA-N 1-dodecylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CCCCCCCCCCCC CTOHEPRICOKHIV-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- XKZQKPRCPNGNFR-UHFFFAOYSA-N 2-(3-hydroxyphenyl)phenol Chemical compound OC1=CC=CC(C=2C(=CC=CC=2)O)=C1 XKZQKPRCPNGNFR-UHFFFAOYSA-N 0.000 description 1
- OZDGMOYKSFPLSE-UHFFFAOYSA-N 2-Methylaziridine Chemical compound CC1CN1 OZDGMOYKSFPLSE-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- WVRHNZGZWMKMNE-UHFFFAOYSA-N 2-hydroxy-1-[2-(2-methylpropyl)phenyl]-2-phenylethanone Chemical compound CC(C)CC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 WVRHNZGZWMKMNE-UHFFFAOYSA-N 0.000 description 1
- NACPTFCBIGBTSJ-UHFFFAOYSA-N 2-hydroxy-2-phenyl-1-(2-propan-2-ylphenyl)ethanone Chemical compound CC(C)C1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 NACPTFCBIGBTSJ-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- GWGWXYUPRTXVSY-UHFFFAOYSA-N N=C=O.N=C=O.CC1=CC=C(C)C=C1 Chemical compound N=C=O.N=C=O.CC1=CC=C(C)C=C1 GWGWXYUPRTXVSY-UHFFFAOYSA-N 0.000 description 1
- 241000233855 Orchidaceae Species 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- RJLZSKYNYLYCNY-UHFFFAOYSA-N ethyl carbamate;isocyanic acid Chemical group N=C=O.CCOC(N)=O RJLZSKYNYLYCNY-UHFFFAOYSA-N 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- DKGCZVJEVNZACI-UHFFFAOYSA-N n-[[5-[[bis(oxiran-2-ylmethyl)amino]methyl]-5-methylcyclohexa-1,3-dien-1-yl]methyl]-1-(oxiran-2-yl)-n-(oxiran-2-ylmethyl)methanamine Chemical compound C1C(CN(CC2OC2)CC2OC2)=CC=CC1(C)CN(CC1OC1)CC1CO1 DKGCZVJEVNZACI-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2852—Adhesive compositions
- Y10T428/2878—Adhesive compositions including addition polymer from unsaturated monomer
- Y10T428/2891—Adhesive compositions including addition polymer from unsaturated monomer including addition polymer from alpha-beta unsaturated carboxylic acid [e.g., acrylic acid, methacrylic acid, etc.] Or derivative thereof
Definitions
- the present invention relates to an adhesive tape for wafer dicing and a method for manufacturing a chip using the same.
- These semiconductor chips can be obtained by thinning a semiconductor wafer to a predetermined thickness in a back grinding process, an etching process, etc., and then supporting and fixing with a dicing tape or the like and chipping in a dicing process.
- the pressure-sensitive adhesive layer of the dicing tape is a radiation-curing type, it is transferred to the pick-up process after being irradiated with radiation such as ultraviolet rays or electron beams, and is mounted on a lead frame or the like through the pick-up and die-bonding processes. Become.
- the dicing process is generally performed by a blade cutting method in which a semiconductor wafer is supported and fixed by a dicing tape and cut by a dicing blade.
- the blade rotation speed is set to about tens of thousands of rpm, the blade receives considerable cutting resistance and has frictional heat.
- the temperature of the blade surface can rise to around 100 ° C.
- the blade base material film is cut by the blade, so that part of the base film is melted by the heat of the blade to form thread-like dicing waste and the pattern on the wafer surface.
- the force is scraped onto the wire.
- a tape for wafer processing in which an adhesive is applied to a cross-linked base film is a viscoelasticity cured with energy rays on the base film.
- a method has been proposed in which a layer is provided and the adhesive film for dicing is cut up to the adhesive layer by dicing, and the base film is not cut (see, for example, Patent Document 2).
- the substrate film is cut with a blade in a high temperature state, but it is not always sufficient when the wafer thickness is in the region of 100 m or less.
- the blade since the blade does not cut the base film, the tape is not melted by the heat of the blade and the yarn-like dicing waste is not generated as described above. Since the layer is a hard layer that is very thick up to 300 m and hardened with energy rays, if the blade cuts through this viscoelastic layer during dicing, a fine powdery form will form from the viscoelastic layer.
- Patent Document 1 Japanese Patent Laid-Open No. 5-211234
- Patent Document 2 Japanese Patent Laid-Open No. 2003-7646
- the present invention relates to a wafer processing tape used for supporting and fixing a workpiece when processing the workpiece such as a wafer, and special processing such as crosslinking a base film.
- the present invention provides a wafer dicing pressure-sensitive adhesive tape excellent in pick-up property and a chip manufacturing method using the tape, which can be manufactured without being subjected to the above-described process and does not generate cutting waste during dicing.
- the inventors of the present invention have two or more pressure-sensitive adhesive layers, each of which contains a radiation polymerizable compound, and the pressure-sensitive adhesive layer Reduces cutting waste during dicing by using an adhesive tape for wafer dicing in which the content of the radiation polymerizable compound in the resin composition constituting the outermost layer is different from that in the resin composition constituting the inner adhesive layer. It was found that the pickup property was good.
- a wafer dicing pressure-sensitive adhesive tape provided with a pressure-sensitive adhesive layer on a base film, the pressure-sensitive adhesive layer comprising two or more layers, and the resin composition constituting any pressure-sensitive adhesive layer is also radiation.
- the content of the radiation-polymerizable compound in the resin composition that contains the polymerizable compound and constitutes the outermost layer of the pressure-sensitive adhesive layer, and its strength in the resin composition that constitutes the inner pressure-sensitive adhesive layer A pressure-sensitive adhesive tape for wafer dicing, wherein the stress applied to the film is sufficiently transmitted to the outermost layer after irradiation, and is different enough to peel the chip from the layer,
- the content of the radiation polymerizable compound in the resin composition constituting the outermost layer of the pressure-sensitive adhesive layer is larger than the content of the radiation polymerizable compound in the resin composition constituting the inner pressure-sensitive adhesive layer.
- the resin composition constituting the outermost layer of the pressure-sensitive adhesive layer contains 50 to 200 parts by mass of the radiation-polymerizable compound with respect to 100 parts by mass of the acrylic base resin, and the inner adhesive.
- the wafer according to (1) or (2), wherein the resin composition constituting the layer contains the radiation-polymerizable compound 5 to LOO parts by mass with respect to 100 parts by mass of the acrylic base resin. Dicing adhesive tape, and
- FIG. 1 is a cross-sectional view showing a cross section of an adhesive tape for wafer dicing according to the present invention.
- FIG. 2 is an explanatory diagram showing a process of dicing a semiconductor wafer with a blade.
- FIG. 3 is a cross-sectional view showing a state in which the lowermost part of the blade cut is in the adhesive layer 2 in the dicing process.
- FIGS. 4 (a) to 4 (c) are cross-sectional views showing a pick-up process of a semiconductor chip using the dicing tape of the present invention
- FIG. 4 (a) is a cross-sectional view in a state where the chip is cut.
- FIG. 4 (b) is a cross-sectional view pushed up by the push-up pin
- FIG. 4 (c) is a cross-sectional view showing a state where the pickup is picked up by the suction collet.
- FIGS. 5 (a) to 5 (c) are cross-sectional views showing a pickup process when a dicing tape in which the pressure-sensitive adhesive layer on the base film is a non-radiation curable pressure-sensitive adhesive layer is used.
- Fig. 5 (a) is a cross-sectional view of a state in which the chip is cut
- Fig. 5 (b) is a cross-sectional view pushed up by a push-up pin
- Fig. 5 (c) shows a state of picking up by an adsorption collet.
- the inner pressure-sensitive adhesive layer contains no radiation polymerizable compound! , Wafer dicing adhesive tape composed of rosin composition
- the “pressure-sensitive adhesive” means an agent that can be peeled off by being subjected to a treatment such as curing after the pressure-sensitive adhesive.
- the wafer dicing adhesive tape 4 of the present invention As shown in the cross-sectional view of FIG. 1, an inner adhesive layer 2 and an outermost layer 1 of the adhesive layer are formed on a base film 3 in this order. As shown in the perspective view of FIG. 2, the wafer dicing adhesive tape 4 of the present invention is bonded to a ring frame 8 having a donut-like shape via an outermost layer 1 of an adhesive layer for fixing. The chuck table 9 is placed so that the outermost layer 1 of the adhesive layer is on the upper side. Thereafter, the wafer 5 to be shredded is bonded to the outermost layer 1 of the pressure-sensitive adhesive layer, and is shredded into tips 5 ′ with the blade 7.
- the wafer dicing adhesive tape 4 of the present invention is preferably chopped together with the chip 5 ′ with a blade 7 so as not to reach the base film 3 as shown in the cross-sectional view of FIG.
- the lowermost part of the blade cut during dicing exceeds the inner adhesive layer 2 and reaches the base film 3, thread-like cutting waste is generated during dicing.
- cutting is performed along the scribe line 6 provided in the wafer 5.
- the resin composition constituting the outermost layer 1 of the pressure-sensitive adhesive layer on the side opposite to the base film 3 contains a radiation-polymerizable compound, and the adhesive strength is reduced by irradiation with radiation. Is done.
- the wafer dicing adhesive tape 4 of the present invention is not irradiated with radiation until the dicing step as shown in FIG. 3, and the wafer is sufficiently held. Therefore, during dicing, fine powdered chips are not generated from the cured adhesive layer.
- the chip 5 ′ cut as shown in the cross-sectional view of FIG. 4 (a) is then turned into the cross-sectional view of FIG. 4 (b).
- the back force of the base film 3 of the wafer dicing adhesive tape 4 is also pushed up by the push-up pin 11, and the stress at that time is sufficiently transmitted to the chip 5 ', and the tape at the end of the chip 5' is deformed.
- the deformation causes the peeling 15 of the end of the tip 5 '.
- the inner layer adhesive layer 2 also contains a radiation-polymerizable compound, it is possible to control the adhesive force widely after the dicing process so that the chip edge peel-off trigger 15 is likely to occur. You can.
- the cut chip 5 ′ is picked up by the suction collect 12.
- 10 is an adsorption stage.
- the pressure-sensitive adhesive tape 14 for wafer dicing in which the inner pressure-sensitive adhesive layer 13 as shown in the cross-sectional view of FIG. 5 (a) is composed of a resin composition containing no radiation-polymerizable compound. Then, as shown in the sectional view of FIG. 5 (b), even if the tip 5 ′ is pushed up from the base film 3 side by the push-up pin 11, the push-up stress by the push-up pin 11 contains the radiation polymerizable compound. As a result, the stress is not transmitted to the tip 5 ′, causing no chipping of the end of the tip 5 ′. ) As shown in the sectional view of FIG. 5, the cut chip 5 ′ may not be picked up by the suction collet 12.
- the present invention has a structure in which an adhesive layer is laminated on a base film, and by preventing the blade from reaching the base film, dicing waste is not generated! And so on.
- the radiation-polymerizable compound used in the present invention is not particularly limited and can be appropriately selected depending on the application.
- acrylic resin is used as the base resin. It is preferable. Examples thereof include acrylic copolymers and methacrylic copolymers (hereinafter sometimes referred to as (meth) acrylic copolymers). In that case, it is possible to use one that is appropriately mixed with a curing agent and crosslinked before irradiation.
- (Meth) acrylic copolymers include, for example, a polymer having (meth) acrylic acid ester as a polymer structural unit, and a (meth) acrylic polymer of (meth) acrylic acid ester copolymer, or a functional property. Examples include copolymers with monomers, and mixtures of these polymers. As the molecular weight of these polymers, those having a weight average molecular weight of about 500,000 to 1,000,000 are generally applied.
- the curing agent is used for adjusting the adhesive force and the cohesive force by reacting with the functional group of the (meth) acrylic copolymer.
- the functional group of the (meth) acrylic copolymer For example, 1,3 bis (N, N diglycidylaminomethyl) cyclohexane, 1,3 bis (N, N-diglycidylaminomethyl) toluene, 1,3-bis (N, N diglycidylaminomethyl) Benzene, N, N, N, N'—tetraglycidyl m-xylene diamine, etc., epoxy compounds with two or more epoxy groups in the molecule, 2, 4 tolylene diisocyanate, 2, 6 tolylene diisocyanate , 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylenomethane 4,4 'diisocyanate and the like, isocyanate compounds having two or more isocyanate groups in the molecule,
- the radiation-polymerizable compound for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation is widely used, and the weight average molecular weight (Mw) It is preferred to use an oligomer with a value in the range of 100 to 30000.
- Mw weight average molecular weight
- examples of such compounds include urethane acrylates, epoxy acrylates, polyester acrylates, polyether acrylates, (meth) acrylic acid oligomers, and itaconic acid oligomers having an oligomer having a functional group such as a hydroxyl group or a carboxyl group.
- Ma can be mentioned.
- the radiation-polymerizable compound contains an acrylic polymer having one or more radiation-polymerizable carbon-carbon double bonds in the side chain as a structural unit.
- a radiation-polymerizable compound having one or more radiation-polymerizable carbon-carbon double bonds in the side chain is a polymer having a carbon-carbon double bond in the molecule, such as an acrylic ester of acrylic acid or methacrylic acid.
- a compound having one or more carbon-carbon double bonds in a homopolymer as a main structural unit or a copolymer of an alkyl ester of acrylic acid or methacrylic acid and another unsaturated monomer copolymerizable therewith Is obtained by addition polymerization.
- This polymer preferably has a weight average molecular weight of 10,000 to 1,000,000, and the glass transition point can be appropriately adjusted by changing the blending ratio of the alkyl ester.
- a urethane acrylate oligomer can also be used.
- the content of the radiation-polymerizable compound in the resin composition constituting the outermost layer of the pressure-sensitive adhesive layer is different from that in the resin composition constituting the inner pressure-sensitive adhesive layer. It will be.
- the content of the radiation polymerizable compound in the composition of the outermost pressure-sensitive adhesive layer is made larger than the content of the radiation polymerizable compound in the composition of the inner pressure-sensitive adhesive layer.
- the adhesive strength of the outermost adhesive layer in contact with the chip is sufficiently reduced and can be easily peeled off, while in particular when expanding and picking up
- the inner pressure-sensitive adhesive layer has flexibility and can be picked up without peeling off the pressure-sensitive adhesive layers.
- the ratio of the radiation-polymerizable compound in the composition of the outermost layer 1 of the pressure-sensitive adhesive layer is the ratio of the radiation-polymerizable compound in the composition of the inner pressure-sensitive adhesive layer 2.
- the resin composition constituting the outermost layer 1 of the pressure-sensitive adhesive layer contains 50 to 200 parts by mass of the radiation-polymerizable compound with respect to 100 parts by mass of the acrylic base resin.
- the resin composition constituting the inner pressure-sensitive adhesive layer 2 located on the inner side of the outermost layer 1 of the pressure-sensitive adhesive layer is the above-mentioned radiation polymerizable compound 5 to 100 parts by mass of the acrylic base resin 5-: LOO quality It is preferable to use a quantity part.
- the radiation-polymerizable compound in the resin composition constituting the outermost layer of the pressure-sensitive adhesive layer having a low content of the radiation-polymerizable compound in the pressure-sensitive adhesive layer 1 and a high content of the radiation-polymerizable compound in the pressure-sensitive adhesive layer 2 Is less than the content of the radiation-polymerizable compound in the resin composition constituting the inner layer of the pressure-sensitive adhesive layer, the adhesive force of the outermost layer of the pressure-sensitive adhesive layer cannot be sufficiently reduced. Since it becomes hard, the pick-up performance is very poor, and it cannot be said that it is at a practical level, and the wafer diameter is not sufficient.
- the content of the radiation-polymerizable compound in the resin composition constituting the outermost layer 1 of the pressure-sensitive adhesive layer is less than 50 parts by mass, the reduction of the adhesive strength is insufficient and the chip size exceeds 10 mm x 10 mm. Such a relatively large chip may not be able to cope with it, and if it is too much, it is not preferable because the adhesive strength is not reduced any more, and the cost is increased.
- the content of the radiation-polymerizable compound in the resin composition constituting the inner pressure-sensitive adhesive layer 2 located inside the outermost layer 1 of the pressure-sensitive adhesive layer is too soft when it is less than 5 parts by mass. This may lead to bad up-ability and cause contamination of the backside of the chip.
- the thickness ratio between the outermost layer 1 of the pressure-sensitive adhesive layer and the inner pressure-sensitive adhesive layer 2 varies depending on the relationship with the above-mentioned blade cut depth and the composition. Basically, the outermost layer 1 of the pressure-sensitive adhesive layer is a chip. Since it is the inner pressure-sensitive adhesive layer 2 that determines the overall hardness, considering only the peelability of the inner layer, the thickness of the inner pressure-sensitive adhesive layer 2> the thickness of the outermost layer 1 of the pressure-sensitive adhesive layer It is desirable.
- each pressure-sensitive adhesive layer is preferably 5 to 70 ⁇ m for the inner pressure-sensitive adhesive layer 2 and more preferably 5 to 20 ⁇ m.
- the outermost layer 1 of the pressure-sensitive adhesive layer is preferably 10 to 80 ⁇ m, more preferably 15 to 50 ⁇ m.
- the adhesive layer provided with the outermost layer 1 of the pressure-sensitive adhesive layer after the inner pressure-sensitive adhesive layer 2 is cured is not included in the two or more pressure-sensitive adhesive layers in the present invention.
- a photopolymerization initiator is usually used. Specifically, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, black mouth thixanthone, dodecyl thioxanthone, dimethyl thioxanthone, jetyl thixanthone, benzyl dimethyl ketal, ⁇ -hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenol- Rupropane or the like is applicable.
- the substrate film 3 of the wafer dicing pressure-sensitive adhesive tape 4 in the present invention is not particularly limited as long as it does not hinder radiation irradiation of the resin composition constituting the pressure-sensitive adhesive layer.
- polyvinyl chloride, polyethylene, various ethylene copolymers such as ethylene acetate butyl copolymer and ethylene (meth) acrylate copolymer, and various elastomers, polyesters, nylons, etc. Can be applied in various ways.
- the thickness of the base film 3 is not limited, but generally a thickness of about 30 to 500 m is applied from the viewpoint of workability.
- a copolymer consisting of 2-ethylhexyl acrylate, methyl acrylate, and 2-hydroxyethyl acrylate was used.
- One 100 parts by mass of a polymer obtained by copolymerizing butyl acrylate, 2-ethylhexyl acrylate, methyl methacrylate, and 2-hydroxyscheryl acrylate is combined with one radiation-polymerizable carbon-carbon double bond.
- a radiation curable acrylic polymer obtained by adding 5 parts by mass of 2-isocyanate ethyl methacrylate was used as a compound having two or more compounds.
- a substrate film with a thickness of 100 m was prepared by the T-die method using EMMA resin (trade name, product name: ACLIFT WD201, manufactured by Sumitomo Chemical Co., Ltd.).
- EMMA resin trade name, product name: ACLIFT WD201, manufactured by Sumitomo Chemical Co., Ltd.
- ExampleThe inner pressure-sensitive adhesive layer (adhesive layer 2) and the outermost pressure-sensitive adhesive layer (pressure-sensitive adhesive layer 1) having the structure shown in the comparative example are each provided with an inner pressure-sensitive adhesive layer thickness of 35 m, Coating was performed in this order so that the thickness of the outermost pressure-sensitive adhesive layer was 10 m, and a pressure-sensitive adhesive tape for wafer dicing was obtained.
- Table 1 and Table 2 'Adhesive tape for wafer dicing of comparative example is attached and fixed to an 8-inch ring frame, and 100 ⁇ m thick is attached to the wafer dicing adhesive tape in the state of being attached and fixed.
- An 8-inch silicon wafer was bonded, and full-cut dicing was performed to a chip size of 5 mm ⁇ 5 mm with a disco dicing machine DA D340 (trade name). At this time, the cutting depth of the blade from the tape surface was set as shown in Tables 1 and 2. Die After singing, use a UV irradiation machine with a high-pressure mercury lamp lamp to irradiate the tape with a back side force of 500 m j / cm 2.
- the number of thread-like dicing scraps generated by dicing was counted by microscopic observation. Observation was conducted for 5 scribe lines.
- the number of powdered chips generated from the adhesive layer by dicing and adhering to the wafer was confirmed by microscopic observation.
- CPS-100FM (trade name) manufactured by NEC Machinery
- the chip is actually picked up with an expansion stroke of 2mm and 12mm, and the chip is pushed up without any problem ⁇ Adsorbed by a circular collet ⁇ Power applied to the lead frame Evaluated.
- the evaluation picked up 200 chips for 8 inch wafers and evaluated how many of them succeeded.
- Example 4 the pickup property was slightly lowered because the content of the radiation-polymerizable compound in the pressure-sensitive adhesive layer 1 was slightly low, but the other items were satisfactory as in Examples 1 to 3 without any problems. Results were obtained. In Examples 6, 7, 8, and 9, the content of the radiation polymerizable compound in the pressure-sensitive adhesive layer 2 was slightly low, so the pick-up property was slightly reduced. For other items, Examples 1 to Similar to 3, good results were obtained without any problems.
- Example 5 the content of the radiation-polymerizable compound in the pressure-sensitive adhesive layer 2 was slightly increased, so that it became hard after irradiation with ultraviolet rays. Therefore, a hard pressure-sensitive adhesive layer with a wafer diameter of 12 mm due to the expand was not necessarily sufficient. Expand with stroke The force that slightly reduced pickup performance due to the
- Comparative Example 1 the pressure-sensitive adhesive layer 2 was previously cured by ultraviolet irradiation, so that a large amount of swarf was generated from the pressure-sensitive adhesive layer 2 during the cutting with the blade and was attached to the wafer. This was a practical level.
- Comparative Example 2 the pressure-sensitive adhesive layer 2 contained no radiation-curing pressure-sensitive adhesive and remained soft after UV irradiation. It was absorbed that I could not pick up the chip at all.
- the pressure-sensitive adhesive layer 1 contains a radiation-curable pressure-sensitive adhesive! / Cunning! As a result, the adhesive strength was not reduced, and as a result, the chip could hardly be picked up. Further, in Comparative Example 4, the pressure-sensitive adhesive layer 1 and the pressure-sensitive adhesive layer 2 have the same content ratio of the radiation-polymerizable compound to the acrylic pressure-sensitive adhesive, and the radiation-polymerizable compound content itself is high after the ultraviolet irradiation. Both layers became too hard and broke at the scribe line due to the 12mm stroke expand.
- the adhesive tape for wafer dicing of the present invention can be used for supporting and fixing an object to be cut such as a wafer, and a chip using the same.
- the manufacturing method it is possible to efficiently manufacture a semiconductor chip that has been thinned and reduced in size so that cutting chips are not generated during dicing.
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- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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EP06730257A EP1865545A4 (en) | 2005-03-29 | 2006-03-28 | ADHESIVE STRIP FOR THE DISTRIBUTION OF WAFER AND CHIP MANUFACTURING PROCESS THEREWITH |
CN200680008106XA CN101138075B (zh) | 2005-03-29 | 2006-03-28 | 晶片切割用胶粘带及使用该胶粘带的芯片的制造方法 |
JP2007510530A JP5019613B2 (ja) | 2005-03-29 | 2006-03-28 | ウエハダイシング用粘着テープおよびそれを用いたチップの製造方法 |
KR1020077021652A KR101058975B1 (ko) | 2005-03-29 | 2006-03-28 | 웨이퍼 다이싱용 점착 테이프 및 그것을 이용한 칩의제조방법 |
US11/892,905 US7985474B2 (en) | 2005-03-29 | 2007-08-28 | Wafer-dicing adhesive tape and method of producing chips using the same |
Applications Claiming Priority (2)
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JP2005-095810 | 2005-03-29 | ||
JP2005095810 | 2005-03-29 |
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US11/892,905 Continuation US7985474B2 (en) | 2005-03-29 | 2007-08-28 | Wafer-dicing adhesive tape and method of producing chips using the same |
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WO2006104151A1 true WO2006104151A1 (ja) | 2006-10-05 |
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PCT/JP2006/306309 WO2006104151A1 (ja) | 2005-03-29 | 2006-03-28 | ウエハダイシング用粘着テープおよびそれを用いたチップの製造方法 |
Country Status (8)
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US (1) | US7985474B2 (ja) |
EP (1) | EP1865545A4 (ja) |
JP (1) | JP5019613B2 (ja) |
KR (1) | KR101058975B1 (ja) |
CN (1) | CN101138075B (ja) |
MY (1) | MY147688A (ja) |
TW (1) | TWI333672B (ja) |
WO (1) | WO2006104151A1 (ja) |
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EP1930386A2 (en) | 2006-12-06 | 2008-06-11 | Nitto Denko Corporation | Removable pressure-sensitive adhesive composition and pressure-sensitive adhesive tape or sheet |
JP2012033639A (ja) * | 2010-07-29 | 2012-02-16 | Nitto Denko Corp | ダイシングテープ一体型半導体裏面用フィルム及び半導体装置の製造方法 |
JP2013023665A (ja) * | 2011-07-25 | 2013-02-04 | Lintec Corp | 粘着シート |
WO2014157471A1 (ja) * | 2013-03-28 | 2014-10-02 | 古河電気工業株式会社 | 粘着テープおよびウエハ加工用テープ |
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JP5027460B2 (ja) * | 2006-07-28 | 2012-09-19 | 東京応化工業株式会社 | ウエハの接着方法、薄板化方法、及び剥離方法 |
CN102157422A (zh) * | 2010-02-12 | 2011-08-17 | 古河电气工业株式会社 | 卷芯及卷绕于卷芯的晶片加工用带 |
WO2012112937A2 (en) * | 2011-02-18 | 2012-08-23 | Applied Materials, Inc. | Method and system for wafer level singulation |
JP5805411B2 (ja) * | 2011-03-23 | 2015-11-04 | ファスフォードテクノロジ株式会社 | ダイボンダのピックアップ方法およびダイボンダ |
TWI671799B (zh) * | 2011-03-30 | 2019-09-11 | Sumitomo Bakelite Co., Ltd. | 半導體晶圓等加工用黏著帶 |
JP6582013B2 (ja) * | 2017-03-31 | 2019-09-25 | 古河電気工業株式会社 | 剥離ライナー付マスク一体型表面保護テープ |
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JP4392732B2 (ja) * | 2000-02-07 | 2010-01-06 | リンテック株式会社 | 半導体チップの製造方法 |
JP2003007646A (ja) | 2001-06-18 | 2003-01-10 | Nitto Denko Corp | ダイシング用粘着シートおよび切断片の製造方法 |
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- 2006-03-28 JP JP2007510530A patent/JP5019613B2/ja active Active
- 2006-03-28 WO PCT/JP2006/306309 patent/WO2006104151A1/ja active Application Filing
- 2006-03-28 EP EP06730257A patent/EP1865545A4/en not_active Withdrawn
- 2006-03-28 KR KR1020077021652A patent/KR101058975B1/ko active IP Right Grant
- 2006-03-28 CN CN200680008106XA patent/CN101138075B/zh active Active
- 2006-03-28 MY MYPI20061364A patent/MY147688A/en unknown
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2007
- 2007-08-28 US US11/892,905 patent/US7985474B2/en active Active
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JPH07235583A (ja) * | 1994-02-24 | 1995-09-05 | Nec Kansai Ltd | 粘着シート |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1930386A2 (en) | 2006-12-06 | 2008-06-11 | Nitto Denko Corporation | Removable pressure-sensitive adhesive composition and pressure-sensitive adhesive tape or sheet |
EP1930386A3 (en) * | 2006-12-06 | 2010-04-28 | Nitto Denko Corporation | Removable pressure-sensitive adhesive composition and pressure-sensitive adhesive tape or sheet |
EP2277965A3 (en) * | 2006-12-06 | 2011-04-13 | Nitto Denko Corporation | Removable pressure-sensitive adhesive composition and pressure-sensitive adhesive tape or sheet |
JP2012033639A (ja) * | 2010-07-29 | 2012-02-16 | Nitto Denko Corp | ダイシングテープ一体型半導体裏面用フィルム及び半導体装置の製造方法 |
TWI460778B (zh) * | 2010-07-29 | 2014-11-11 | Nitto Denko Corp | 半導體背面用切晶帶一體膜及半導體裝置之製造方法 |
JP2013023665A (ja) * | 2011-07-25 | 2013-02-04 | Lintec Corp | 粘着シート |
WO2014157471A1 (ja) * | 2013-03-28 | 2014-10-02 | 古河電気工業株式会社 | 粘着テープおよびウエハ加工用テープ |
JP5731080B2 (ja) * | 2013-03-28 | 2015-06-10 | 古河電気工業株式会社 | 粘着テープおよびウエハ加工用テープ |
JPWO2014157471A1 (ja) * | 2013-03-28 | 2017-02-16 | 古河電気工業株式会社 | 粘着テープおよびウエハ加工用テープ |
Also Published As
Publication number | Publication date |
---|---|
US7985474B2 (en) | 2011-07-26 |
JP5019613B2 (ja) | 2012-09-05 |
US20080008881A1 (en) | 2008-01-10 |
CN101138075A (zh) | 2008-03-05 |
MY147688A (en) | 2012-12-31 |
KR20070118094A (ko) | 2007-12-13 |
CN101138075B (zh) | 2011-04-20 |
TWI333672B (en) | 2010-11-21 |
TW200641987A (en) | 2006-12-01 |
EP1865545A1 (en) | 2007-12-12 |
KR101058975B1 (ko) | 2011-08-23 |
JPWO2006104151A1 (ja) | 2008-09-11 |
EP1865545A4 (en) | 2008-03-26 |
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