TWI671799B - 半導體晶圓等加工用黏著帶 - Google Patents
半導體晶圓等加工用黏著帶 Download PDFInfo
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- TWI671799B TWI671799B TW101110076A TW101110076A TWI671799B TW I671799 B TWI671799 B TW I671799B TW 101110076 A TW101110076 A TW 101110076A TW 101110076 A TW101110076 A TW 101110076A TW I671799 B TWI671799 B TW I671799B
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Abstract
本發明之課題係提供一種可使剝離黏著帶後殘留於被黏著物表面上之黏著劑的量充分地減低之半導體晶圓等加工用黏著帶。本發明之半導體晶圓等加工用黏著帶100係具備基材層200與黏著層300。黏著層300係形成於基材層200之至少一面上。而且,黏著層300係主要由含羧基之聚合物所形成。含羧基之聚合物含有放射線聚合化合物(特別是胺基甲酸酯丙烯酸酯)。
Description
本發明係有關一種半導體晶圓等加工用黏著帶。
本申請案係主張以2011年3月30日於日本提出申請的特願2011-075003號及2012年1月11日於日本提出申請的特願2012-003125號為基準之優先權,且其內容皆援用於此。
以往以來,對於半導體晶圓或封裝品之切割加工時所使用的半導體晶圓等之加工用黏著帶(以下稱為「切割膠帶」)有各種的提案。一般而言,切割膠帶係在基材層(基層)上形成黏著層,藉由該黏著層來固定半導體晶圓等。於半導體晶圓等進行切割加工後,通常以可容易地拾取半導體晶片之方式,在黏著層中添加放射線聚合化合物(光硬化型樹脂)、放射線聚合起始劑(光聚合起始劑)及交聯劑等。換言之,若於切割加工後,對黏著層照射紫外線等之放射線(光),則會使此等成分硬化,且使黏著層之黏著性降低,而容易拾取半導體晶片。
此處,於自被黏著物剝離切割膠帶之步驟中,會產生在被黏著物之表面上殘留部分構成黏著層之黏著劑、即糊料殘留情形的問題。而且,於以切割膠帶保持被黏著物之步驟中,切割膠帶會有無法使具有凹凸之被黏著物穩定且予以保持的問題。因此,例如於專利文獻1、2中揭示,為解決上述問題時,適當選擇黏著層之材料的切割膠帶。此等切割膠帶可使具有凹凸之被黏著物穩定且予以保持。
專利文獻1 日本特開2005-136298號公報
專利文獻2 日本特開2003-105283號公報
然而,此等切割膠帶無法使剝離膠帶後殘留於被黏著物表面上的黏著劑之量充分地減低。
本發明之目的在於提供一種可減低於剝離膠帶後殘留於被黏著物表面上的黏著劑之量的半導體晶圓等加工用黏著帶。
該目的係藉由下述之(1)~(9)記載的本發明予以達成。
(1)一種半導體晶圓等加工用黏著帶,其係具備基材層、與形成於前述基材層之至少一面上的黏著層,
前述黏著層含有含羧基之聚合物、放射線聚合化合物、與交聯劑,前述放射線聚合化合物的重量平均分子量為500以上、20000以下,且其官能基數為5官能基以上,其特徵為前述交聯劑之含量,相對於含羧基之聚合物100重量份而言為3重量份以上、14重量份以下。
(2)如前述(1)記載的半導體晶圓等加工用黏著帶,其中前述放射線聚合化合物之重量平均分子量為1000以上、20000以下,且官能基數為10官能基以上。
(3)如前述(1)或(2)記載之半導體晶圓等加工用黏著帶,其中前述含羧基之聚合物係進一步含有酯基,且前述含羧基之聚合物的前述酯基之個數與前述羧基之個數的比例(酯基/羧基)為80/20以上95/5以下。
(4)如前述(1)~(3)中任一項記載之半導體晶圓等加工用黏著帶,其中前述放射線聚合化合物之重量平均分子量為500以上、3000以下,且官能基數為15官能基以下。
(5)如前述(1)~(4)中任一項記載之半導體晶圓等加工用黏著帶,其中前述官能基為乙烯基。
(6)如前述(1)~(5)中任一項記載之半導體晶圓等加工用黏著帶,其中前述放射線聚合化合物之含量,相對於前述含羧基之聚合物100重量份而言為30重量份以上、70重量份以下。
(7)如前述(1)~(6)中任一項記載之半導體晶圓等加工用黏著帶,其中前述放射線聚合化合物為胺基甲酸酯丙烯酸酯。
(8)如前述(1)~(7)中任一項記載之半導體晶圓等加工用黏著帶,其中前述交聯劑含有異氰酸酯基。
(9)如前述(1)~(8)中任一項記載之半導體晶圓等加工用黏著帶,其中前述含羧基聚合物為丙烯酸酯與丙烯酸之共聚物。
藉由具備上述構成,本發明的半導體晶圓等加工用黏著帶可使具有凹凸之被黏著物更穩定而固定者。
而且,本發明之切割膠帶係以對被黏著物而言具有良好的黏著力,且提高拾取性為目的,形成黏著層上沒有設置晶粒黏附膜等之構造。
由於該構造,故不需考慮在黏著層上層合晶粒黏附膜等時所引起的下述缺點①~④等。
①於切割處理時,因晶粒黏附膜熔融而導致切割品質降低,且因黏著層與晶粒黏附膜黏接而降低拾取性。②因晶粒
黏附膜與黏著層密接而降低長時間保管時之拾取性。③為了積層晶粒黏附膜而增加製造步驟。④由於有晶粒黏附膜與黏著層反應之可能性,而無法在常溫下輸送。
本發明之半導體晶圓等加工用黏著帶,可減低於剝離膠帶後殘留於被黏著物表面之黏著劑的量。
於下述中,以具體的實施形態為基準,詳細地說明有關本發明之半導體晶圓等加工用黏著帶。
本發明之半導體晶圓等加工用黏著帶,其特徵為具備基材層、與形成於前述基材層之至少一面上的黏著層;前述黏著層含有含羧基之聚合物、放射線聚合化合物、與交聯劑;前述放射線聚合化合物的重量平均分子量為500以上、30000以下,且其官能基數為5官能基以上、15官能基以下。
圖1係為說明本發明之半導體晶圓等加工用黏著帶(以下稱為「黏著帶」或「切割膠帶」)100時之圖。如圖1所示,本發明一實施形態之黏著帶100,係以含有基材層200與黏著層300而構成。於下述中,各詳細說明有關黏著帶使用作為切割膠帶時之基材層200及黏著層300。
基材層200係主要含有材料樹脂,擔任支持黏著層300之作用。而且,該基材層200於切割步驟後所實施的延伸步驟中,具有僅能承受拉伸之強度。延伸步驟係拉伸黏著帶100且擴展晶片間隔之步驟。該延伸步驟之目的係為提高拾取時之晶片辨識性,及防止相鄰的晶片彼此間接觸而
導致裝置破損的情形。
前述材料樹脂係藉由一般的薄膜成形方法成形為薄膜。該材料樹脂只要是可透過放射線(可見光線、近紅外線、紫外線、X光線、電子線等)者即可,沒有特別的限制,例如使用聚氯乙烯、聚乙烯、聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯等之聚烯烴系樹脂、乙烯.醋酸乙烯酯共聚物、離子聚合物、乙烯.(甲基)丙烯酸共聚物、乙烯.(甲基)丙烯酸酯共聚物等之烯烴系共聚物、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯等之聚對苯二甲酸烷二酯系樹脂、苯乙烯系熱可塑性彈性體、烯烴系熱可塑性彈性體、聚乙烯異戊烯、聚碳酸酯等之熱可塑性樹脂、或此等之熱可塑性樹脂的混合物。
特別是以使用聚丙烯與彈性體之混合物、或聚乙烯與彈性體之混合物作為材料樹脂較佳。而且,該彈性體係以含有一般式(1)表示之聚苯乙烯段與一般式(2)表示之乙烯聚異戊烯段所形成的嵌段共聚物較佳。此外,就耐候性而言聚異戊烯段以氫化者較佳。
(一般式(1)中,n為2以上之整數)
(一般式(2)中,n為2以上之整數)
前述基材層200之厚度沒有特別的限制,以50μm以
上300μm以下較佳,以80μm以上200μm以下更佳。基材層200之厚度為前述範圍內時,就成本而言、及於切割步驟或延伸步驟之作業性而言優異。
前述基材層200之製法沒有特別的限制,係使用切斷法、擠壓成形法等之一般成形方法。較佳係於前述基材層200之表面,露出與構成黏著層300之材料反應的官能基(例如羥基或胺基等)。此外,為提高基材層200與黏著層300之密接性時,以使基材層200之表面以電暈處理或底層處理等進行表面處理者較佳。
黏著層300係於切割步驟中擔任黏著、支持被黏著物之半導體晶圓等之作用。該黏著劑300於切割步驟後照射光時,形成可容易剝離半導體晶圓等之切斷片的狀態。而且,使用前之切割膠帶100,通常以防黏薄膜(release film)保護黏著層300。
前述黏著層300係形成於基材層200之一側面上(參照圖1)。而且,黏著層300之材料的樹脂溶液,通常藉由塑模塗布、簾幕塗布、照相凹版塗布、刮刀式塗布、棒材塗布或唇膜塗布等之塗布方法塗布於基層200上。乾燥後之黏著層300的厚度沒有特別的限制,以5μm以上30μm以下較佳,以10μm以上25μm以下更佳。藉由使乾燥後之黏著層的厚度為前述範圍下限值以上,對被黏著物之保持力優異。此外,藉由使乾燥後之黏著層的厚度為前述範圍上限值以下,就成本而言、及就防止切割時糊屑附著於晶片之缺點而言,可製得優異的切割薄膜。
前述黏著層300係含有含羧基之聚合物。而且,黏著
層300含有放射線聚合化合物(使黏著層300硬化的硬化成分)。此外,於該黏著層300中亦可含有作為任意成分之抗靜電劑、及膠黏劑。於下述中,分別詳細說明各成分。
含羧基之聚合物例如具有羧基之加成型單體、與丙烯酸酯、乙酸乙烯酯、丙烯腈、苯乙烯等之共聚物,其中特別是以具有羧基之加成型單體與丙烯酸酯之共聚物、即含有酯基之含羧基的丙烯酸酯系聚合物較佳。該含有酯基之含羧基的聚合物中之酯基的個數與羧基的個數之比例(酯基/羧基)以80/20以上95/5以下較佳,以85/15以上95/5以下更佳,以85/15以上90/10以下最佳。藉由使含有酯基之含羧基的聚合物中之酯基的個數與羧基的個數之比例(酯基/羧基)為前述範圍內,半導體晶圓等加工用黏著帶更為容易追隨具有凹凸的被黏著物表面,可安定地予以保持。而且,該含羧基之丙烯酸系聚合物,在不會損害本發明主旨之範圍內,亦可與醋酸乙烯酯單體及具有除羧基以外之官能基的加成型單體中至少一者共聚合。
前述具有羧基之加成型單體,例如甲基丙烯酸、丙烯酸、衣康酸、馬來酸酐等。丙烯酸酯例如丙烯酸乙酯、丙烯酸丁酯、丙烯酸2-乙基己酯、丙烯酸環氧丙酯、丙烯酸2-羥基乙酯、甲基丙烯酸乙酯、甲基丙烯酸丁酯、甲基丙烯酸2-乙基己酯、甲基丙烯酸環氧丙酯、甲基丙烯酸2-羥基乙酯、甲基丙烯酸二甲基胺基乙酯等。於此等之中,以選自含有丙烯酸乙酯、丙烯酸丁酯及丙烯酸2-乙基己酯、甲基丙烯酸二甲基胺基乙酯所成群中之至少一種的丙烯酸酯較佳。藉由使用具有羧基之丙烯酸酯,由於可提高與被黏
著物之密接性,可抑制半導體構件之固定性、端材飛散及剝落情形,故更佳。
此外,具有除羧基以外之官能基的加成型單體沒有特別的限制,例如甲基丙烯酸羥基乙酯、丙烯酸羥基乙酯、甲基丙烯酸羥基丙酯、丙烯酸羥基丙酯、甲基丙烯酸二甲基胺基乙酯、丙烯酸二甲基胺基乙酯、丙烯醯胺、羥甲基丙烯醯胺、甲基丙烯酸環氧丙酯等。
例如含有羧基之丙烯酸系聚合物,係使用以下述化學構造式(3)表示的丙烯酸系樹脂(即具有羧基之加成型單體的丙烯酸)、與丙烯酸酯之丙烯酸2-乙基己酯之共聚物。於該化學構造式中,以n為85~95重量份相當莫耳數,m為5~15重量份相當莫耳數較佳。m小於前述記載的範圍時,對被黏著物表面之凹凸的追隨性變得不佳,於切割時恐會有晶片飛散及切削水浸入晶片裏面的問題,此外,m多於前述記載的範圍時,恐會與被黏著物之密接性變得過剩而產生拾取性的缺點。於前述範圍中,以n為90重量份相當莫耳數、m為10重量份相當莫耳數更佳。
放射線聚合化合物係使用作為使黏著層300硬化的硬化成分,前述放射線聚合化合物例如單官能丙烯酸酯、多官能丙烯酸酯、單官能甲基丙烯酸酯、多官能甲基丙烯酸
酯、胺基甲酸酯丙烯酸酯、胺基甲酸酯甲基丙烯酸酯、丙烯酸環氧酯、甲基丙烯酸環氧酯、聚酯丙烯酸酯、或尿素丙烯酸酯等,於此等之中以胺基甲酸酯丙烯酸酯較佳。此係由於胺基甲酸酯丙烯酸酯之骨架強韌且柔軟,故可減低於拾取時因針而導致糊破割裂的情形。另外,胺基甲酸酯丙烯酸酯於照射紫外線時,會硬化。藉由該硬化,會有基底樹脂混入胺基甲酸酯丙烯酸酯之交聯構造中,結果導致黏著層300之黏著力降低。此外,在不會損害本發明之主旨的範圍內,亦可使作為硬化成分之例如三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、市售的低聚酯丙烯酸酯等,與胺基甲酸酯丙烯酸酯一起使用。
前述放射線聚合化合物(特別是胺基甲酸酯丙烯酸酯),其重量平均分子量為500以上,較佳者為700以上,更佳者為1000以上,最佳者為1200以上。而且,為20000以下,較佳者為3000以下,更佳者為2500以下,最佳者為2000以下。放射線聚合化合物之重量平均分子量未滿500時,恐會有於切割時容易產生糊料飛散,而對晶片表面產生污染的情形,且容易產生糊料被轉印於被黏著物上的問題,故不為企求。前述聚合化合物之重量平均分子量超過20000時,恐會有無法使放射線膠帶剝離後殘留於被黏著物表面的構成黏著層300之黏著劑的量充分地減低,且無法得到對被黏著物而言良好的黏著力的情形。而且,就考慮對被黏著物表面之凹凸的追隨性變得不佳,於切割時晶片
飛散及切削水浸入晶片裏面的可能性變低時,放射線聚合化合物之重量平均分子量以3000以下較佳。
測定前述放射線聚合化合物(特別是胺基甲酸酯丙烯酸酯)之重量平均分子量的方法,例如凝膠滲透色層分析法(簡稱為GPC法)。前述GPC法之測定,沒有特別的限制,可使用Waters公司製Alliance(2695 Separations module、2414 Refractive Index Detector、TSK Gel GMHHR-Lx2+TSK Guard Column HHR-Lx1、移動相:THF、1.0ml/分鐘),以管柱溫度40.0℃、示差折射率計內溫度40.0℃、試料注入量100μl之條件進行。
另外,前述放射線聚合化合物(特別是胺基甲酸酯丙烯酸酯),其官能基數為5官能基以上、較佳者為7官能基以上、更佳者為8官能基以上、最佳者為10官能基以上。官能基數為15官能基以下、較佳者為13官能基以下、更佳者為12官能基以下。放射線聚合化合物之官能基數未滿前述5官能基時,恐會有放射前照射後之硬化變得不充分,產生拾取性的缺點。放射線聚合化合物之官能基數超過15官能基時,恐會有因硬化收縮而產生膠帶縮小,且剝落缺點或拾取的問題。而且,恐會因過度硬化而導致糊料變脆,於拾取時糊屑會附著於晶片裏面的缺點。
前述放射線聚合化合物(特別是胺基甲酸酯丙烯酸酯),藉由其重量平均分子量為500以上、3000以下,且其官能基數為5官能基以上、15官能基以下,本發明之半導體晶圓等加工用黏著帶可使放射線膠帶剝離後殘留於被黏著物表面的構成黏著層300之黏著劑的量充分地減低,且具有對被黏著物而言良好的黏著力。此外,進一步具有良
好的固定性及拾取性,且可使具有凹凸之被黏著物穩定且予以保持。
而且,前述放射線聚和化合物之前述官能基,以乙烯基較佳。
前述放射線聚合化合物(特別是胺基甲酸酯丙烯酸酯)之含量,相對於前述含有羧基之聚合物100重量份而言為30重量以上70重量份以下,較佳者為40重量份以上60重量份以下,更佳者為45重量份以上55重量份以下。藉由使放射線聚合化合物之含量在前述範圍內,可使黏著帶100之拾取性為適合者。
在不會損害本發明主旨之範圍內,以前述硬化成分與放射線聚合起始劑、交聯劑一起使用較佳。
前述放射線(光)聚合起始劑係為使硬化成分容易開始聚合而添加。放射線聚合起始劑例如2,2-二甲氧基-1,2-二苯基乙烷-1-酮、二苯甲酮、苯乙酮、苯偶因、苯偶因甲醚、苯偶因***、苯偶因異丙醚、硫化苯甲基二苯基、單硫化四甲基秋蘭姆(tetramethyl thiuram monosulfide)、偶氮雙異丁腈、聯苄、雙乙醯、β-氯蒽醌等。
前述交聯劑例如環氧系交聯劑、異氰酸酯系交聯劑、羥甲基系交聯劑、螯合劑系交聯劑、氮丙啶系交聯劑、蜜胺系交聯劑、多價金屬螯合劑系交聯劑等。於此等之中,就生產性(使用期限)高、或雜質少而言,以使用異氰酸酯系交聯劑較佳。
前述異氰酸酯系交聯劑沒有特別的限制,例如多元異氰酸酯之聚異氰酸酯化合物及聚異氰酸酯化合物之三聚物、聚異氰酸酯化合物與多元醇化合物反應所得的末端異
氰酸酯化合物之三聚物或末端異氰酸酯胺基甲酸酯預聚物以苯酚、肟類等予以封端的嵌段化聚異氰酸酯化合物等。於此等之中,就可築構適當的交聯網而言,以使用多元異氰酸酯較佳。此係藉由交聯,可提高黏著層之凝聚力,且可抑制糊料殘留於被黏著物上。
前述多元異氰酸酯例如使用2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-苯二甲基二異氰酸酯、1,4-苯二甲基二異氰酸酯、二苯基甲烷-4,4’-二異氰酸酯、二苯基甲烷-2,4’-二異氰酸酯、3-甲基二苯基甲烷二異氰酸酯、六亞甲基二異氰酸酯、異佛酮二異氰酸酯、二環己基甲烷-4,4’-二異氰酸酯、二環己基甲烷-2,4’-二異氰酸酯等。於此等之中,以選自由2,4-甲苯二異氰酸酯、二苯基甲烷-4,4’-二異氰酸酯及六亞甲基二異氰酸所成群中之至少一種的多元異氰酸酯較佳。
前述黏著層300相對於含有羧基之聚合物100重量份而言,以含有3重量份以上14重量份以下之交聯劑較佳,以含有4重量份以上10重量份以下之交聯劑更佳,以含有5重量份以上7重量份以下之交聯劑最佳。藉由使交聯劑在前述範圍內,本發明之半導體晶圓等加工用黏著帶可使膠帶剝離後殘留於被黏著物表面上之黏著劑的量充分地減低,且具有對被黏著物而言良好的黏著力。此外,本發明之半導體晶圓等加工用黏著帶,具有更佳的拾取性。
抗靜電劑沒有特別的限制,例如使用陰離子性界面活性劑、陽離子性界面活性劑、非離子性界面活性劑、兩離子性界面活性劑等之界面活性劑。另外,不具溫度相關性
之抗靜電劑,例如碳黑、銀、鎳、銻摻雜錫氧化物、錫摻雜銦氧化物等之粉體。
膠黏劑沒有特別的限制,例如松香樹脂、萜烯樹脂、薰草酮樹脂、苯酚樹脂、苯乙烯樹脂、脂肪族系石油樹脂、芳香族系石油樹脂、脂肪族芳香族共聚合系石油樹脂等。
本發明之半導體晶圓等加工用黏著帶的用途,除切割膠帶外,例如背景燈膠帶、印刷基板保護膠帶等之電子用途、窗戶玻璃保護用薄膜、裝飾用光罩薄膜、醫療、衛生用藥劑之基材等。
黏著帶100之使用方法,可使用習知的方法。例如將黏著帶100貼附於被黏著物之半導體晶圓等予以固定後,以回轉圓刀將半導體裝置切成元件小片。於切斷後,自黏著帶100之基材層200側照射紫外線。於照射後,使用專用工具使黏著帶100擴展成放射狀,使晶片間擴展成一定間隔後,以針等使半導體裝置頂起。經頂起的半導體裝置,藉由真空夾套或氣動鉗子吸附等,予以拾取後,進行固定或收容於托架上。
其次,說明有關本發明之黏著帶100的實施例1~7、及比較例1~5。而且,本發明不受實施例所限制。
準備聚丙烯60重量份、以一般式(1)表示的聚苯乙烯段與以一般式(2)表示的乙烯基聚異戊烯段所形成的嵌段共
聚物40重量份作為構成基材層200之材料。
(一般式(1)中,n為2以上之整數)
(一般式(2)中,n為2以上之整數)
使上述構成基材層200之材料以2軸混練機進行混練後,將經混練者以擠壓機擠壓,製作厚度150μm之基材層200。
準備含有羧基之丙烯酸系聚合物作為黏著層300之含羧基的聚合物。含羧基之丙烯酸系聚合物係將丙烯酸丁酯90重量%、及丙烯酸10重量%藉由常法在甲苯溶劑中予以溶液聚合者。該含羧基之丙烯酸系聚合物係重量平均分子量為600,000之樹脂,其酯基之個數與羧基之個數的比例(酯基/羧基)為90/10。
準備相對於含羧基之聚合物100重量份而言為50重量份之重量平均分子量為1400、官能基數為9官能基之胺基甲酸酯丙烯酸酯(新中村化學工業股份有限公司製、品名:UA-33H)作為黏著層300之硬化成分。重量平均分子量之測定係將20mg之胺基甲酸酯丙烯酸酯溶解於6ml之四氫呋喃(以下為THF),進行測定GPC。GPC之測定係使用Waters公司製Alliance(2695 Separations module、2414 Refractive Index Detector、TSK Gel GMHHR-Lx2+TSK
Guard Column HHR-Lx1、移動相:THF、1.0ml/分鐘),以管柱溫度40.0℃、示差折射率計內溫度40.0℃、試料注入量100μl之條件進行。另外,準備相對於含羧基之聚合物100重量份而言為3重量份之放射線聚合起始劑之2,2-二甲氧基-2-苯基苯乙酮。準備相對於含羧基之聚合物100重量份而言為5重量份之交聯劑的聚異氰酸酯系交聯劑。
製作配合有上述之黏著層300的含羧基的聚合物、胺基甲酸酯丙烯酸酯、放射線聚合起始劑、及交聯劑之樹脂溶液。將該樹脂溶液以乾燥後黏著層之厚度為15μm的方式,棒材塗布於基材層200後,在80℃下進行乾燥5分鐘,製得企求的黏著帶100。
於製作後,將在23℃下經過7日以上之黏著帶100貼附於被黏著物之半導體晶圓上。藉由180°剝離試驗測定於貼附後經過20分鐘之黏著帶100對半導體晶圓鏡面而言之黏著力。180°剝離試驗係使用萬能試驗機(A&D股份有限公司製、品名:Tensilon),以環境溫度:23℃、環境壓力:常壓、拉伸速度:300mm/min之條件進行。然後,以所得的黏著力圖表之平均值作為黏著層300之黏著力(cN/25mm)。所測定的黏著力1000 cN/25mm以上者評估為◎,500cN/25mm以上、未滿1000cN/25mm者評估為○,未滿500 cN/25mm者評估為×。
進行上述評估之結果,黏著力為1600cN/25mm,有關黏著帶100黏著於被黏著物評估為◎(參照下述表1)。
將黏著帶100以23℃之條件壓熔於半導體晶圓上,放
置20分鐘後,切成10mmx10mm之尺寸大小。於切斷後,對黏著帶100照射紫外線,使用真空吸附之收集器吸附經切斷的半導體晶圓之表面,且使4mm間隔的4根針自黏著帶100之下方頂起500μm,自黏著帶100拾取半導體晶圓。於經切斷的半導體晶圓中,99%以上可拾取者評估為◎,90%以上、未滿99%可拾取者評估為○,其餘者評估為×。
另外,進行評估在剝離黏著帶100後之半導體晶圓表面上是否殘留部分的構成黏著層300之黏著劑,即是否產生糊料殘留情形。具體而言,以目視觀察切割後之半導體晶圓貼附有黏著帶100上殘留糊料,及對貼附有黏著帶100之面的相反面上或側面而言,於切割時飛散的糊料附著情形。在半導體晶圓上完全沒有糊料殘留及糊料附著情形者評估為◎,糊料殘留及糊料附著的半導體晶圓為全體之5%以下者評估為○,在半導體晶圓上糊料殘留及糊料附著超過全體之5%者評估為×。
進行上述評估的結果,於經切割的晶片中99%可拾取,拾取性評估為◎。於切割後之半導體晶圓上沒有糊料殘留及糊料附著產生,有關糊料殘留之評估為◎(參照下述表1)。
除下述外,與實施例1同樣地,製得黏著帶100。準備相對於含羧基之聚合物100重量份而言為50重量份之重量平均分子量為1800、官能基數為6官能之胺基甲酸酯丙烯酸酯(Miwon Specialty Chemical公司製、品名:Miramer PU610)作為黏著層300之硬化成分。另外,準備相對於含
羧基之聚合物100重量份而言為5重量份之交聯劑的聚異氰酯系交聯劑。
有關該黏著帶100,與實施例1同樣地,進行評估有關對被黏著物之黏著情形、評估拾取性、評估有關糊料殘留的情形。
結果,本實施例之黏著力為1400cN/25mm,有關黏著帶100黏著於被黏著物之評估為◎。於經切割的晶片中100%可拾取,拾取性評估為◎。於切割後之半導體晶圓上沒有糊料殘留及糊料附著產生,有關糊料殘留之評估為◎(參照下述表1)。
除下述外,與實施例1同樣地,製得切割膠帶。準備相對於含羧基之聚合物100重量份而言為30重量份之重量平均分子量為1400、官能基數為9官能之胺基甲酸酯丙烯酸酯(新中村化學工業股份有限公司製、品名:UA-33H)作為黏著層300之硬化成分。另外,準備相對於含羧基之聚合物100重量份而言為5重量份之交聯劑的聚異氰酯系交聯劑。
有關該黏著帶100,與實施例1同樣地,進行評估有關對被黏著物之黏著情形、評估拾取性、評估有關糊料殘留情形。
結果,本比較例之黏著力為2000cN/25mm,有關切割膠帶黏著於被黏著物之評估為◎。於經切割的晶片中96%可拾取,拾取性評估為○。於切割後之半導體晶圓上沒有糊料殘留及糊料附著產生,有關糊料殘留之評估為◎(參照下述表1)。
除下述外,與實施例1同樣地,製得切割膠帶。準備相對於含羧基之聚合物100重量份而言為70重量份之重量平均分子量為1400、官能基數為9官能之胺基甲酸酯丙烯酸酯(新中村化學工業股份有限公司製、品名:UA-33H)作為黏著層300之硬化成分。另外,準備相對於含羧基之聚合物100重量份而言為5重量份之交聯劑的聚異氰酯系交聯劑。
有關該黏著帶100,與實施例1同樣地,進行評估有關對被黏著物之黏著情形、評估拾取性、評估有關糊料殘留情形。
結果,本實施例之黏著力為1200cN/25mm,有關切割膠帶黏著於被黏著物之評估為◎。於經切割的晶片中100%可拾取,拾取性評估為◎。於切割後之半導體晶圓上有全體之2%的糊料殘留及糊料附著產生,有關糊料殘留之評估為○(參照下述表1)。
除下述外,與實施例1同樣地,製得切割膠帶。準備相對於含羧基之聚合物100重量份而言為20重量份之重量平均分子量為1400、官能基數為9官能之胺基甲酸酯丙烯酸酯(新中村化學工業股份有限公司製、品名:UA-33H)作為黏著層300之硬化成分。另外,準備相對於含羧基之聚合物100重量份而言為5重量份之交聯劑的聚異氰酯系交聯劑。
有關該黏著帶100,與實施例1同樣地,進行評估有關對被黏著物之黏著情形、評估拾取性、評估有關糊料殘留
情形。
結果,本比較例之黏著力為2200cN/25mm,有關切割膠帶黏著於被黏著物之評估為◎。於經切割的晶片中92%可拾取,拾取性評估為○。於切割後之半導體晶圓上沒有糊料殘留及糊料附著產生,有關糊料殘留之評估為◎(參照下述表1)。
除下述外,與實施例1同樣地,製得切割膠帶。準備相對於含羧基之聚合物100重量份而言為20重量份之重量平均分子量為1400、官能基數為9官能之胺基甲酸酯丙烯酸酯(新中村化學工業股份有限公司製、品名:UA-33H)作為黏著層300之硬化成分。另外,準備相對於含羧基之聚合物100重量份而言為5重量份之交聯劑的聚異氰酯系交聯劑。
有關該黏著帶100,與實施例1同樣地,進行評估有關對被黏著物之黏著情形、評估拾取性、評估有關糊料殘留情形。
結果,本比較例之黏著力為900cN/25mm,有關切割膠帶黏著於被黏著物之評估為○。於經切割的晶片中100%可拾取,拾取性評估為◎。於切割後之半導體晶圓上有全體之5%的糊料殘留及糊料附著產生,有關糊料殘留之評估為○(參照下述表1)。
除下述外,與實施例1同樣地,製得切割膠帶。準備以與實施例1相同方法作成的含羧基之含羧基的聚合物(酯基的個數與羧基的個數的比例為98/2)取代黏著層300之含
羧基的聚合物。準備相對於含羧基之聚合物100重量份而言為50重量份之重量平均分子量為1400、官能基數為9官能之胺基甲酸酯丙烯酸酯(新中村化學工業股份有限公司製、品名:UA-33H)作為黏著層300之硬化成分。準備相對於含羧基之聚合物100重量份而言為5重量份之聚異氰酯系交聯劑作為黏著層300之交聯劑。
有關該黏著帶100,與實施例1同樣地,進行評估有關對被黏著物之黏著情形、評估拾取性、評估有關糊料殘留情形。
結果,本比較例之黏著力為800cN/25mm,有關切割膠帶黏著於被黏著物之評估為○。於經切割的晶片中95%可拾取,拾取性評估為○。於切割後之半導體晶圓上有全體之3%的糊料殘留及糊料附著產生,有關糊料殘留之評估為○(參照下述表1)。
除下述外,與實施例1同樣地,製得切割膠帶。準備相對於含羧基之聚合物100重量份而言為50重量份之重量平均分子量為467、官能基數為4官能之胺基甲酸酯丙烯酸酯(日本化藥股份有限公司製、品名:Kayarad T-1420(T))作為黏著層300之硬化成分。準備相對於含羧基之聚合物100重量份而言為5重量份之聚異氰酯系交聯劑作為黏著層300之交聯劑。
有關該黏著帶100,與實施例1同樣地,進行評估有關對被黏著物之黏著情形、評估拾取性、評估有關糊料殘留情形。
結果,本比較例之黏著力為1900cN/25mm,有關切割
膠帶黏著於被黏著物之評估為◎。於經切割的晶片中67%可拾取,拾取性評估為×。於切割後之半導體晶圓上有全體之16%的糊料殘留及糊料附著產生,有關糊料殘留之評估為×(參照下述表1)。
除下述外,與實施例1同樣地,製得切割膠帶。準備相對於含羧基之聚合物100重量份而言為50重量份之重量平均分子量為20000、官能基數為15官能之胺基甲酸酯丙烯酸酯(Miwon Specialty Chemical公司製、品名:Miramer SC2152)作為黏著層300之硬化成分。準備相對於含羧基之聚合物100重量份而言為5重量份之聚異氰酯系交聯劑作為黏著層300之交聯劑。
有關該黏著帶100,與實施例1同樣地,進行評估有關對被黏著物之黏著情形、評估拾取性、評估有關糊料殘留情形。
結果,本比較例之黏著力為400cN/25mm,有關切割膠帶黏著於被黏著物之評估為×。於經切割的晶片中92%可拾取,拾取性評估為○。於切割後之半導體晶圓上沒有糊料殘留及糊料附著產生,有關糊料殘留之評估為◎(參照下述表1)。
除下述外,與實施例1同樣地,製得切割膠帶。準備相對於含羧基之聚合物100重量份而言為50重量份之重量平均分子量為11000、官能基數為3官能之胺基甲酸酯丙烯酸酯(Miwon Specialty Chemical公司製、品名:Miramer PU320)作為黏著層300之硬化成分。準備相對於含羧基之
聚合物100重量份而言為5重量份之聚異氰酯系交聯劑作為黏著層300之交聯劑。
有關該黏著帶100,與實施例1同樣地,進行評估有關對被黏著物之黏著情形、評估拾取性、評估有關糊料殘留情形。
結果,本比較例之黏著力為870cN/25mm,有切割膠帶黏著於被黏著物之評估為◎。於經切割的晶片中73%可拾取,拾取性評估為×。於切割後之半導體晶圓上沒有糊料殘留及糊料附著產生,有關糊料殘留之評估為◎(參照下述表1)。
除下述外,與實施例1同樣地,製得切割膠帶。準備丙烯酸系聚合物(綜研化學股份有限公司製、品名:SK DYNE 1491H)取代黏著層300之含羧基的聚合物。準備相對於含羧基之聚合物100重量份而言為50重量份之重量平均分子量為1400、官能基數為9官能之胺基甲酸酯丙烯酸酯(新中村化學工業股份有限公司製、品名:UA-33H)作為黏著層300之硬化成分。準備相對於含羧基之聚合物100重量份而言為5重量份之交聯劑的聚異氰酯系交聯劑。
有關該黏著帶100,與實施例1同樣地,進行評估有關對被黏著物之黏著情形、評估拾取性、評估有關糊料殘留情形。
結果,本比較例之黏著力為400cN/25mm,有關切割膠帶黏著於被黏著物之評估為×。於經切割的晶片中100%可拾取,拾取性評估為◎。於切割後之半導體晶圓上有全體之10%的糊料殘留及糊料附著產生,有關糊料殘留之評估
為×(參照下述表1)。
除下述外,與實施例1同樣地,製得切割膠帶。準備矽系聚合物(Momentive Performance Materials公司製、品名:TSE3221S)取代黏著層300之含羧基的聚合物。準備相對於含羧基之聚合物100重量份而言為50重量份之重量平均分子量為1400、官能基數為9官能之胺基甲酸酯丙烯酸酯(新中村化學工業股份有限公司製、品名:UA-33H)作為黏著層300之硬化成分。準備相對於含羧基之聚合物100重量份而言為5重量份之聚異氰酯系交聯劑作為黏著層300之交聯劑。
有關該黏著帶100,與實施例1同樣地,進行評估有關對被黏著物之黏著情形、評估拾取性、評估有關糊料殘留情形。
結果,本實施例之黏著力為340cN/25mm,有關切割膠帶黏著於被黏著物之評估為×。於經切割的晶片中95%可拾取,拾取性評估為○。於切割後之半導體晶圓上有全體之25%糊料殘留及糊料附著產生,有關糊料殘留之評估為×(參照下述表1)。
實施例1、2之黏著帶100,進行評估有關對被黏著物之黏著情形、評估有關糊料殘留的情形、評估拾取性皆為◎。另外,實施例3、4之黏著帶100,◎為2個、○為1個;實施例5、6之黏著帶100,◎為1個、○為2個;實施例7之黏著帶100,全部為○。對此而言,比較例1~5之切割膠帶,有關對被黏著物之黏著情形的評估、有關糊料殘留之評估、拾取性之評估中至少一個為×。
除下述外,與實施例1同樣地,製得切割(黏著)膠帶100。
準備重量平均分子量為3200g/mol、官能基數為10官能之胺基甲酸酯丙烯酸酯(Miwon Specialty Chemical公司製、品名:Miramer MU9500)作為黏著層300之硬化成分。
除下述之評估外,與有關實施例1之黏著於被黏著物的評估相同。
所測定的黏著力係以500cN/25mm以上者為○,未滿500cN/25mm者為×。
進行評估有關在剝離切割100後之被黏著物之表面上是否殘留有部分構成黏著層300之黏著劑、即糊料殘留情形。具體而言,以目視觀察在剝離切割膠帶100後之半導體晶圓貼附有切割膠帶100之面上殘留糊料、及貼附有黏著帶100之面的相反面上或側面而言於切割時飛散的糊料附著情形。在半導體晶圓上沒有產生糊料殘留及糊料附著
情形評估為○,在半導體晶圓上有產生糊料殘留及糊料附著情形評估為×。
進行上述評估的結果,黏著力為1300cN/25mm,有關切割膠帶100對被黏著物之黏著情形評估為○。在自切割膠帶100剝離的半導體晶圓上沒有產生糊料殘留情形,有關糊料殘留之評估為○(參照下述表2)。
除下述之評估外,與實施例1之拾取性的評估相同。
於經切割的半導體晶圓中95%以上可被拾取者評估為○,以外者評估為×。
進行上述評估的結果,經切割的晶圓中99%可拾取,拾取性評估為○(參照下述表2)。
除下述外,與實施例A1同樣地,製得切割膠帶100。準備重量平均分子量為14000g/mol、官能基數為15官能之胺基甲酸酯丙烯酸酯(Miwon Specialty Chemical公司製、品名:Miramer MU9510)作為黏著層300之硬化成分。而且,準備相對於含羧基之聚合物100重量份而言為7重量份之交聯劑的聚異氰酸酯系交聯劑。
有關該切割膠帶100,與實施例A1同樣地,進行有關對被黏著物之黏著評估、有關糊料殘留之評估、拾取性之評估。
結果,本實施例之黏著力為900cN/25mm,有關切割膠帶100對被黏著物之黏著情形評估為○。在自切割膠帶100剝離的半導體晶圓上沒有產生糊料殘留情形,有關糊料殘留之評估為○。於經切割的半導體晶圓中100%可被拾取者
評估為○(參照下述表2)。
除下述外,與實施例A1同樣地,製得切割膠帶。準備重量平均分子量為467g/mol、官能基數為4官能之胺基甲酸酯丙烯酸酯(日本化藥股份有限公司製、品名:Kayarad T-1420(T))作為黏著層300之硬化成分。準備相對於含羧基之聚合物100重量份而言為5重量份之聚異氰酸酯系交聯劑作為黏著層300之交聯劑。
有關該切割膠帶,與實施例A1同樣地,進行有關對被黏著物之黏著評估、有關糊料殘留之評估、拾取性之評估。
結果,本比較例之黏著力為1900cN/25mm,有關切割膠帶對被黏著物之黏著情形評估為○。在自切割膠帶剝離的半導體晶圓上有產生糊料殘留情形,有關糊料殘留之評估為×。於經切割的半導體晶圓中67%可被拾取者評估為×(參照下述表2)。
除下述外,與實施例A1同樣地,製得切割膠帶。準備重量平均分子量為20787g/mol、官能基數為15官能之胺基甲酸酯丙烯酸酯(Miwon Specialty Chemical公司製、品名:Miramer C2152)作為黏著層300之硬化成分。而且,準備相對於含羧基之聚合物100重量份而言為7重量份之聚異氰酸酯系交聯劑作為黏著層300之交聯劑。
有關該切割膠帶,與實施例A1同樣地,進行有關對被黏著物之黏著評估、有關糊料殘留之評估、拾取性之評估。
結果,本比較例之黏著力為400cN/25mm,有關切割膠帶對被黏著物之黏著情形評估為×。在自切割膠帶剝離的半
導體晶圓上沒有產生糊料殘留情形,有關糊料殘留之評估為○。於經切割的半導體晶圓中100%可被拾取者評估為○(參照下述表2)。
除下述外,與實施例A1同樣地,製得切割膠帶。準備重量平均分子量為11000g/mol、官能基數為3官能之胺基甲酸酯丙烯酸酯(Miwon Specialty Chemical公司製、品名:Miramer PU320)作為黏著層300之硬化成分。而且,準備相對於含羧基之聚合物100重量份而言為5重量份之聚異氰酸酯系交聯劑作為黏著層300之交聯劑。
有關該切割膠帶,與實施例A1同樣地,進行有關對被黏著物之黏著評估、有關糊料殘留之評估、拾取性之評估。
結果,本比較例之黏著力為870cN/25mm,有關切割膠帶對被黏著物之黏著情形評估為○。在自切割膠帶剝離的半導體晶圓上沒有產生糊料殘留情形,有關糊料殘留之評估為○。於經切割的半導體晶圓中73%可被拾取者評估為×(參照下述表2)。
除下述外,與實施例A1同樣地,製得切割膠帶。準備丙烯酸系聚合物(綜研化學股份有限公司製、品名:SK DYNE 1491H)作為黏著層300之含羧基的聚合物。準備重量平均分子量為8000g/mol、官能基數為10官能之胺基甲酸酯丙烯酸酯(Miwon Specialty Chemical公司製、品名:Miramer MU9500)作為黏著層300之硬化成分。而且,準備相對於含羧基之聚合物100重量份而言為5重量份之聚異氰酸酯系交聯劑作為黏著層300之交聯劑。
有關該切割膠帶,與實施例A1同樣地,進行有關對被黏著物之黏著評估、有關糊料殘留之評估、拾取性之評估。
結果,本比較例之黏著力為300cN/25mm,有關切割膠帶對被黏著物之黏著情形評估為×。在自切割膠帶剝離的半導體晶圓上有產生糊料殘留情形,有關糊料殘留之評估為×。於經切割的半導體晶圓中100%可被拾取者評估為○(參照下述表2)。
除下述外,與實施例A1同樣地,製得切割膠帶。準備矽系聚合物(Momentive Performance Materials公司製、品名:TSE3221S)作為黏著層300之含羧基的聚合物。準備重量平均分子量為8000g/mol、官能基數為10官能之胺基甲酸酯丙烯酸酯(Miwon Specialty Chemical公司製、品名:Miramer MU9500)作為黏著層300之硬化成分。準備相對於含羧基之聚合物100重量份而言為5重量份之聚異氰酸酯系交聯劑作為黏著層300之交聯劑。
有關該切割膠帶,與實施例A1同樣地,進行有關對被黏著物之黏著評估、有關糊料殘留之評估、拾取性之評估。
結果,本比較例之黏著力為340cN/25mm,有關切割膠帶對被黏著物之黏著情形評估為×。在自切割膠帶剝離的半導體晶圓上有產生糊料殘留情形,有關糊料殘留之評估為×。於經切割的半導體晶圓中100%可被拾取者評估為○(參照下述表2)。
實施例A1、A2之切割膠帶100,進行有關對被黏著物之黏著之評估、有關糊料殘留之評估、有關拾取性之評估皆為○。對此而言,比較例A1~A5之切割膠帶,進行有關對被黏著物之黏著之評估、有關糊料殘留之評估、有關拾取性之評估中至少一個為×。
本發明之半導體晶圓等加工用黏著帶為可使剝離膠帶後殘留於被黏著物表面上之黏著劑的量減低之半導體晶圓等加工用黏著帶。
100‧‧‧切割膠帶(半導體晶圓等加工用黏著帶)
200‧‧‧基材層(基層)
300‧‧‧黏著層
圖1係本發明一實施形態之切割膠帶的截面圖。
Claims (6)
- 一種半導體晶圓等加工用黏著帶,其係具備基材層、與形成於前述基材層之至少一面上的黏著層;前述黏著層含有丙烯酸酯與丙烯酸之共聚物、放射線聚合化合物、與交聯劑;前述放射線聚合化合物的重量平均分子量為500以上3000以下,且其官能基數為5官能基以上15官能基以下;前述交聯劑之含量,相對於前述丙烯酸酯與丙烯酸之共聚物100重量份而言為5重量份以上7重量份以下;前述丙烯酸酯與丙烯酸之共聚物的酯基之個數與羧基之個數的比例(酯基/羧基)為80/15以上90/10以下。
- 如申請專利範圍第1項之半導體晶圓等加工用黏著帶,其中前述放射線聚合化合物之重量平均分子量為1000以上3000以下,且官能基數為10官能基以上。
- 如申請專利範圍第1項之半導體晶圓等加工用黏著帶,其中前述官能基為乙烯基。
- 如申請專利範圍第1項之半導體晶圓等加工用黏著帶,其中前述放射線聚合化合物之含量,相對於前述丙烯酸酯與丙烯酸之共聚物100重量份而言為30重量份以上70重量份以下。
- 如申請專利範圍第1項之半導體晶圓等加工用黏著帶,其中前述放射線聚合化合物為胺基甲酸酯丙烯酸酯。
- 如申請專利範圍第1項之半導體晶圓等加工用黏著帶,其中前述交聯劑含有異氰酸酯基。
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JP6539336B2 (ja) * | 2015-03-23 | 2019-07-03 | リンテック株式会社 | 半導体加工用シートおよび半導体装置の製造方法 |
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TW201011820A (en) * | 2008-08-11 | 2010-03-16 | Denki Kagaku Kogyo Kk | Processing method for semiconductor, and adhesive tape |
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TW201246285A (en) | 2012-11-16 |
SG193464A1 (en) | 2013-10-30 |
MY162761A (en) | 2017-07-14 |
CN103443229B (zh) | 2015-09-02 |
US20140011025A1 (en) | 2014-01-09 |
WO2012133418A1 (ja) | 2012-10-04 |
KR20140019330A (ko) | 2014-02-14 |
CN103443229A (zh) | 2013-12-11 |
KR101882539B1 (ko) | 2018-07-26 |
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