WO2005103180A1 - 接着シート、半導体装置、及び半導体装置の製造方法 - Google Patents
接着シート、半導体装置、及び半導体装置の製造方法 Download PDFInfo
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- WO2005103180A1 WO2005103180A1 PCT/JP2005/007529 JP2005007529W WO2005103180A1 WO 2005103180 A1 WO2005103180 A1 WO 2005103180A1 JP 2005007529 W JP2005007529 W JP 2005007529W WO 2005103180 A1 WO2005103180 A1 WO 2005103180A1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2852—Adhesive compositions
- Y10T428/287—Adhesive compositions including epoxy group or epoxy polymer
Definitions
- the adhesive sheet of the present invention comprises 15 to 40% by weight of a high molecular weight component having a weight average molecular weight of 100,000 or more containing a crosslinkable functional group and a Tg of -50 to 50 ° C, and an epoxy resin as a main component.
- the composition is characterized in that it comprises 100 parts by weight of a resin containing 60 to 85% by weight of a thermosetting component and 40 to 180 parts by weight of a filler, and has a thickness of 10 to 250 m.
- epoxy resin curing agent a commonly used known curing agent can be used.
- phenol resin such as bisphenol A nopolak resin or cresol novolak resin, etc.
- the adhesive sheet of the present invention has an improved dicing property of the adhesive sheet in the B-stage state, an improved handleability of the adhesive sheet, an improved thermal conductivity, an adjustment of melt viscosity, and an impartation of titatropic properties.
- a filler preferably an inorganic filler, is blended.
- hydroxylated aluminum water
- Magnesium oxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, amorphous silica, and the like are preferable. Also, alumina and silica are preferable for improving dicing property.
- a multilayer adhesive sheet having a structure in which a first adhesive layer and a second adhesive layer are directly or indirectly laminated, wherein at least the second adhesive layer
- the layer is made of the adhesive sheet of the present invention, and the first adhesive layer has a melt viscosity a Pa's and a thickness a / zm, and the second adhesive layer has a melt viscosity j8 Pa's and a thickness b.
- / zm can be used as a multilayer adhesive sheet having a relationship of ⁇ > ⁇ X3 and aX2 ⁇ b.
- the first adhesive layer is not particularly limited as long as it can be attached to a wafer at a temperature of 80 ° C. or lower, and can be used, for example, NO-IATCH HS-210, HS-230, manufactured by Hitachi Chemical Co., Ltd.
- the adhesive sheet of the present invention can be used.
- FIG. 3 shows a cross-sectional view of an adhesive sheet b, a semiconductor wafer A, and a dancing tape 1 according to one embodiment of the present invention.
- FIG. 4 shows a multilayer adhesive sheet according to one embodiment of the present invention.
- c a cross-sectional view of the semiconductor wafer A and the dicing tape 1.
- a indicates the first adhesive layer
- b ′ indicates the second adhesive layer.
- melt viscosity of the adhesive sheet a value measured and calculated by the following parallel plate plastometer method was used. That is, an adhesive sheet is laminated to produce a film having a thickness of 100 to 300 m. This was punched out into a circular shape with a diameter of 11.3 mm, and the sample was pressed at 100 ° C under a load of 3.0 kgf for 5 seconds. Calculated.
- the adhesive layer of the first layer was 320,000 Pa ⁇ s
- the adhesive layer of the second layer was 2640 Pa ⁇ s.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020097015877A KR101165131B1 (ko) | 2004-04-20 | 2005-04-20 | 접착시트, 반도체장치, 및 반도체장치의 제조방법 |
US11/578,939 US8017444B2 (en) | 2004-04-20 | 2005-04-20 | Adhesive sheet, semiconductor device, and process for producing semiconductor device |
US13/204,379 US20110287250A1 (en) | 2004-04-20 | 2011-08-05 | Adhesive sheet, semiconductor device, and process for producing semiconductor device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2004-124118 | 2004-04-20 | ||
JP2004124118 | 2004-04-20 | ||
JP2004-351605 | 2004-12-03 | ||
JP2004351605 | 2004-12-03 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/204,379 Division US20110287250A1 (en) | 2004-04-20 | 2011-08-05 | Adhesive sheet, semiconductor device, and process for producing semiconductor device |
Publications (1)
Publication Number | Publication Date |
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WO2005103180A1 true WO2005103180A1 (ja) | 2005-11-03 |
Family
ID=35196956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2005/007529 WO2005103180A1 (ja) | 2004-04-20 | 2005-04-20 | 接着シート、半導体装置、及び半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8017444B2 (ja) |
KR (2) | KR20070004100A (ja) |
CN (1) | CN101714513B (ja) |
TW (1) | TWI360153B (ja) |
WO (1) | WO2005103180A1 (ja) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007270125A (ja) * | 2006-03-08 | 2007-10-18 | Hitachi Chem Co Ltd | 接着シート、一体型シート、半導体装置、及び半導体装置の製造方法 |
JP2007302881A (ja) * | 2006-04-11 | 2007-11-22 | Hitachi Chem Co Ltd | 接着剤組成物及び接着シート |
JP2008133456A (ja) * | 2006-10-24 | 2008-06-12 | Hitachi Chem Co Ltd | 半導体用接着剤組成物、半導体用接着シート及び半導体装置 |
JP2008274259A (ja) * | 2007-04-02 | 2008-11-13 | Hitachi Chem Co Ltd | 接着シート |
JP2009065191A (ja) * | 2007-04-19 | 2009-03-26 | Sekisui Chem Co Ltd | ダイシング・ダイボンディングテープ及び半導体チップの製造方法 |
JP2009120830A (ja) * | 2007-10-24 | 2009-06-04 | Hitachi Chem Co Ltd | 接着シート及びこれを用いた半導体装置およびその製造方法 |
EP1970422A3 (en) * | 2007-03-13 | 2010-03-10 | Toray Saehan Inc. | Adhesive film for stacking semiconductor chips |
WO2010131655A1 (ja) * | 2009-05-13 | 2010-11-18 | 日立化成工業株式会社 | 接着シート |
JP2012167174A (ja) * | 2011-02-14 | 2012-09-06 | Lintec Corp | 接着剤組成物、接着シートおよび半導体装置の製造方法 |
JP2013256574A (ja) * | 2012-06-12 | 2013-12-26 | Hitachi Chemical Co Ltd | フィルム状接着剤、接着シート、及び半導体装置の製造方法 |
WO2014058056A1 (ja) * | 2012-10-11 | 2014-04-17 | 日立化成株式会社 | 粘着剤組成物、積層体及び剥離方法 |
WO2020136904A1 (ja) * | 2018-12-28 | 2020-07-02 | 日立化成株式会社 | 接着フィルム、ダイシング・ダイボンディング一体型フィルム及び半導体パッケージの製造方法 |
CN111630642A (zh) * | 2018-01-30 | 2020-09-04 | 日立化成株式会社 | 半导体装置的制造方法及膜状粘接剂 |
KR20220054875A (ko) | 2019-09-06 | 2022-05-03 | 쇼와덴코머티리얼즈가부시끼가이샤 | 반도체 장치의 제조 방법 및 콜릿 |
KR20230034291A (ko) | 2020-07-03 | 2023-03-09 | 레조낙 가부시끼가이샤 | 반도체 장치 및 그 제조 방법 |
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JPWO2010131655A1 (ja) * | 2009-05-13 | 2012-11-01 | 日立化成工業株式会社 | 接着シート |
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JP2012167174A (ja) * | 2011-02-14 | 2012-09-06 | Lintec Corp | 接着剤組成物、接着シートおよび半導体装置の製造方法 |
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WO2014058056A1 (ja) * | 2012-10-11 | 2014-04-17 | 日立化成株式会社 | 粘着剤組成物、積層体及び剥離方法 |
CN111630642A (zh) * | 2018-01-30 | 2020-09-04 | 日立化成株式会社 | 半导体装置的制造方法及膜状粘接剂 |
CN111630642B (zh) * | 2018-01-30 | 2023-05-26 | 株式会社力森诺科 | 半导体装置的制造方法及膜状粘接剂 |
US11634614B2 (en) | 2018-07-11 | 2023-04-25 | Resonac Corporation | Method for manufacturing semiconductor device, heat-curable resin composition, and dicing-die attach film |
WO2020136904A1 (ja) * | 2018-12-28 | 2020-07-02 | 日立化成株式会社 | 接着フィルム、ダイシング・ダイボンディング一体型フィルム及び半導体パッケージの製造方法 |
JPWO2020136904A1 (ja) * | 2018-12-28 | 2021-11-25 | 昭和電工マテリアルズ株式会社 | 接着フィルム、ダイシング・ダイボンディング一体型フィルム及び半導体パッケージの製造方法 |
JP7322897B2 (ja) | 2018-12-28 | 2023-08-08 | 株式会社レゾナック | 接着フィルム、ダイシング・ダイボンディング一体型フィルム及び半導体パッケージの製造方法 |
KR20220054875A (ko) | 2019-09-06 | 2022-05-03 | 쇼와덴코머티리얼즈가부시끼가이샤 | 반도체 장치의 제조 방법 및 콜릿 |
KR20230034291A (ko) | 2020-07-03 | 2023-03-09 | 레조낙 가부시끼가이샤 | 반도체 장치 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR20070004100A (ko) | 2007-01-05 |
KR101165131B1 (ko) | 2012-07-12 |
TW200539291A (en) | 2005-12-01 |
US20110287250A1 (en) | 2011-11-24 |
TWI360153B (en) | 2012-03-11 |
CN101714513A (zh) | 2010-05-26 |
US8017444B2 (en) | 2011-09-13 |
KR20090090404A (ko) | 2009-08-25 |
US20070241434A1 (en) | 2007-10-18 |
CN101714513B (zh) | 2012-05-30 |
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